CN108458789A - A kind of bolometer and its preparation method and application based on vulcanization tantalum films - Google Patents
A kind of bolometer and its preparation method and application based on vulcanization tantalum films Download PDFInfo
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- CN108458789A CN108458789A CN201810359376.XA CN201810359376A CN108458789A CN 108458789 A CN108458789 A CN 108458789A CN 201810359376 A CN201810359376 A CN 201810359376A CN 108458789 A CN108458789 A CN 108458789A
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- tantalum films
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- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 75
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000004073 vulcanization Methods 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 15
- 238000003331 infrared imaging Methods 0.000 claims abstract description 5
- 238000001931 thermography Methods 0.000 claims abstract description 5
- 238000012546 transfer Methods 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 13
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 13
- 239000005864 Sulphur Substances 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000010445 mica Substances 0.000 claims description 5
- 229910052618 mica group Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- GSLNTGVHPTZSME-UHFFFAOYSA-N [O-2].[V+5].[C+4] Chemical compound [O-2].[V+5].[C+4] GSLNTGVHPTZSME-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The present invention provides a kind of bolometers and its preparation method and application based on vulcanization tantalum films, the bolometer includes vulcanization tantalum films, support electrode and reading circuit, wherein vulcanization tantalum films are vacantly positioned on support electrode, and support electrode is connect with reading circuit.Heretofore described vulcanization tantalum films, which are grown in substrate by low-pressure chemical vapor deposition method and remove substrate by wet method transfer, becomes free standing structure film；The vulcanization tantalum films are located on support electrode, absorptive thermal radiation makes own temperature change, the vulcanization tantalum films have high temperature-coefficient of electrical resistance as thermo-sensitive material, the change in resistance that circuit can be measured in reading circuit, so as to be used for infrared acquisition, infrared imaging, thermal imaging etc..
Description
Technical field
The invention belongs to photoelectricity and thermoelectric measurement technical field, it is related to a kind of bolometer and preparation method thereof and uses
It is on the way more particularly to a kind of based on the bolometer and its preparation method and application for vulcanizing tantalum films.
Background technology
Infrared imagery technique is a kind of infrared ray specific band signal with photoelectric technology detection object heat radiation, by light
Signal is converted into electric signal, and reconvert becomes the technology of the image and figure differentiated for human vision, at present in the military and people
It is all widely used with field.Bolometer is that there is the material of the sensitive characteristic resistance value in temperature change can occur
Certain variation and a kind of non-refrigeration type infrared detector constituted, it is the infrared detector that can be worked at normal temperatures.
Thermistor in adiabatic mechanism applies stable voltage or current source, temperature change meeting caused by incident infrared light or heat radiation
So that thermistor resistance value is changed, to make the voltage of thermistor, electric current change, electricity is finally read by reading circuit
The variation of signal.Therefore, must have higher temperature-coefficient of electrical resistance (TCR) as the material of thermistor, higher light is rung
It answers, higher 1/f noise, smaller thermal conductivity is easily prepared, and the features such as stable hot property.
Currently, the mainstream thermistor material for being applied to bolometer in the market mainly has VOx, Pt and YBCO.Such as CN
10881667A discloses a kind of uncooled microbolometer, uses vanadium oxide-carbon nano-tube compound film as microbolometer
The thermally sensitive layer and light absorbing layer of heat meter.For another example micro-metering bolometer detector layer disclosed in CN 103959024A, by adulterating
The vanadic anhydride material of metal is made.But VOxTemperature-coefficient of electrical resistance be -2 arrive -6.5%/K, Pt and YBCO resistance temperatures
Coefficient is respectively 0.39%/K and -3.4%/K.Traditional VO at room temperaturexThe voltage photoresponse about 1400V/ (Wmm of film-2), Pt
Photoresponse with YBCO is respectively 0.24 and 62V/ (Wmm-2).As it can be seen that being applied to the mainstream heat of bolometer in the prior art
The temperature-coefficient of electrical resistance of quick resistance material and voltage photoresponse are undesirable, need further to improve.
Invention content
For deficiency existing for thermistor material in existing bolometer, the present invention provides a kind of letters of manufacture craft
Single, photoresponse value bigger bolometer and its preparation method and application based on vulcanization tantalum films.The present invention is to vulcanize tantalum
Film is as thermistor material, and using it, temperature-coefficient of electrical resistance and photoresponse value Rv are higher than several times of traditional material at transformation temperature
The characteristics of to more than ten times, and then obtain high performance bolometer.
For this purpose, the present invention uses following technical scheme：
In a first aspect, the present invention provides a kind of bolometer, the bolometer includes vulcanization tantalum films, support
Electrode and reading circuit, wherein vulcanization tantalum films are vacantly positioned on support electrode, support electrode is connect with reading circuit.
In the present invention, the support electrode also referred to as supports bridge pier or support leg etc., belongs in art technology often
Rule statement.
In the present invention, the support electrode has the characteristics that thermal conductivity is low, plays and supports hanging vulcanization tantalum films and lead
The effect of circuit passband is not limited to certain homogenous material or composite material, but the Si led with low conductance and low-heat3N4As preferred.
In the present invention, the vulcanization tantalum films reachable -33%/K of the temperature-coefficient of electrical resistance at transformation temperature, than traditional survey spoke
Several times to more than ten times of heat meter thermo-sensitive material height is penetrated, the photoresponse value Rv at transformation temperature is up to 2.6 × 103V/(Wmm-2), it is higher than
Several times to more than ten times of traditional material has the feature of optimization bolometer performance.
In the present invention, the vulcanization tantalum films of 1T phases belong to charge density wave phase-change material, and the core of charge density wave is electricity
The periodic modulation of lotus density, phase conversion mechanism are periodic lattice distortion caused by electronics and phonon coupling.With temperature or
The variation of voltage, vulcanization tantalum films can occur charge density wave phase transformation, show as periodic distortion of lattice under given conditions
The David Star structures of formation.It includes two processes to vulcanize tantalum films phase transformation, mutually becomes nearly public affairs from the charge density wave of commensurability
The charge density wave phase of degree and the charge density wave phase for mutually becoming non-commensurability from the charge density wave of nearly commensurability, it is equal at transformation temperature
The mutation of generating material resistance value, and the phase transition temperature of the latter is slightly above room temperature just.
It is that non-commensurability charge is close to vulcanize tantalum films in 340K or so to have by nearly commensurability charge density wave (NCCDW) phase transition
Spend the charge density wave phase change characteristics of wave (ICCDW) phase.The vulcanization tantalum films have high resistance temperature as thermo-sensitive material
Coefficient is spent, absorptive thermal radiation makes own temperature change, the change in resistance of circuit can be measured by reading circuit, so as to be used for
The fields such as infrared acquisition, infrared imaging and thermal imaging.
It is used as currently preferred technical solution below, but not as the limitation of technical solution provided by the invention, passes through
Following technical scheme can preferably reach and realize the technical purpose and advantageous effect of the present invention.
As currently preferred technical solution, the support electrode includes that supporting layer and the electricity in supporting layer are led to
Road, the electricity channel connection vulcanization tantalum films and reading circuit.
Preferably, the material of the supporting layer is Si3N4, it is not limited to the material, other are with low conductance and low
The material of thermal conductivity is equally applicable to the present invention.
Preferably, the electricity channel is conductive metal, and the conductive metal has good electric conductivity, preferably ni-Cd
Alloy.
In the present invention, the electricity channel is to make circuit turn-on, and vulcanizes the heat that tantalum films and supporting layer are absorbed
Loss reduction.
As currently preferred technical solution, the vulcanization tantalum films are 1T phases.
Preferably, it is described vulcanization tantalum films thickness be 0.8nm~200nm, such as 0.8nm, 1nm, 10nm, 30nm,
50nm, 70nm, 100nm, 130nm, 150nm, 170nm or 200nm etc., it is not limited to cited numerical value, the numerical value model
Other unrequited numerical value are equally applicable in enclosing.
Preferably, the size of the channel width of the vulcanization tantalum films overhanging portion is 10 μm~3mm, such as 10 μm, 50 μ
M, 100 μm, 300 μm, 500 μm, 700 μm, 1mm, 1.5mm, 2mm, 2.5mm or 3mm etc., it is not limited to cited number
Value, other interior unrequited numerical value of the numberical range are equally applicable.
Preferably, the input voltage of the bolometer is trapezoidal pulse voltage, is conducive to eliminate vulcanization tantalum films
The interference that brings of charge density wave phase transformation sluggishness.
Second aspect, the present invention provides the preparation methods of above-mentioned bolometer, the described method comprises the following steps：
Vulcanization tantalum films are prepared in substrate by low-pressure chemical vapor deposition, then substrate is removed and tantalum films will be vulcanized
It is transferred on support electrode, forms bolometer；
Wherein, the low pressure finger pressure be 1Torr~7.5Torr, such as 1Torr, 2Torr, 3Torr, 4Torr,
5Torr, 6Torr, 7Torr or 7.5Torr etc., it is not limited to cited numerical value, other are unrequited in the numberical range
Numerical value it is equally applicable.
In the present invention, the support electrode is connect with reading circuit, and preparation method is existing method in the prior art, therefore
It repeats no more.
In the present invention, after vulcanization tantalum films are first transferred to support electrode, then electrode will be supported to be connect with reading circuit.
It is described specifically to be wrapped by low-pressure chemical vapor deposition preparation vulcanization tantalum films as currently preferred technical solution
Include following steps：
Using tantalic chloride and sulphur powder as source, vulcanization tantalum films are grown in substrate by low-pressure chemical vapor deposition method,
Growth temperature is 810 DEG C~850 DEG C, and growth time is 1min~10min；
Wherein, growth temperature can be 810 DEG C, 820 DEG C, 830 DEG C, 840 DEG C or 850 DEG C etc., it is not limited to cited
Numerical value, other unrequited numerical value are equally applicable in the numberical range；Growth time can be 1min, 2min, 3min, 4min,
5min, 6min, 7min, 8min, 9min or 10min etc., it is not limited to cited numerical value, in the numberical range, other are not
The numerical value enumerated is equally applicable.
Preferably, the growth temperature is 850 DEG C, growth time 10min.
As currently preferred technical solution, the low-pressure chemical vapor deposition carries out in tube furnace.
Preferably, the substrate includes mica and/or polishing monocrystalline silicon piece.
As currently preferred technical solution, the mass ratio of the tantalic chloride and sulphur powder is 1:(10~15), such as
1:10、1:11、1:12、1:13、1:14 or 1:15 etc., it is not limited to cited numerical value, in the numberical range, other are not
The numerical value enumerated is equally applicable, and preferably 1:10.
Preferably, the tantalic chloride it is heated after carry out low-pressure chemical vapor deposition, heating temperature be 130 DEG C~
150 DEG C, such as 130 DEG C, 133 DEG C, 135 DEG C, 137 DEG C, 140 DEG C, 143 DEG C, 145 DEG C, 147 DEG C or 150 DEG C etc., but simultaneously not only limit
It is equally applicable in other unrequited numerical value in cited numerical value, the numberical range.
Preferably, low-pressure chemical vapor deposition is carried out after the sulphur powder is heated, heating temperature is 150 DEG C~160 DEG C,
Such as 150 DEG C, 151 DEG C, 152 DEG C, 153 DEG C, 154 DEG C, 155 DEG C, 156 DEG C, 157 DEG C, 158 DEG C, 159 DEG C or 160 DEG C etc., but simultaneously
It is not limited only to cited numerical value, other unrequited numerical value are equally applicable in the numberical range.
As currently preferred technical solution, is shifted by wet method and remove substrate.
Preferably, wet method removal is carried out using a concentration of 3%~6% hydrofluoric acid in the wet method transfer, concentration can
It is 3%, 4%, 5% or 6% etc., it is not limited to cited numerical value, other interior unrequited numerical value of the numberical range are same
Sample is applicable in, it is preferred to use a concentration of 4% hydrofluoric acid.
The third aspect, the present invention provides the purposes of above-mentioned bolometer, which is characterized in that the pyranometer is used for
Infrared acquisition, infrared imaging and thermal imaging field.
As currently preferred technical solution, the bolometer makes vulcanization tantalum films keep vacuum shape when measuring
State.Since vulcanization tantalum films material cannot exist steadily in the long term in an atmosphere, device need to be placed on vacuum environment when testing
In, prevent vulcanization tantalum films from being aoxidized.
Preferably, the pressure of the vacuum state is less than 1 × 10-4mbar。
Preferably, the input voltage of the bolometer is trapezoidal pulse voltage.
Compared with prior art, the invention has the advantages that：
(1) temperature-coefficient of electrical resistance (TCR) reachable -33%/K of the transformation temperature position of bolometer of the present invention,
Much larger than the temperature-coefficient of electrical resistance of traditional mainstream thermo-sensitive material, material foundation is provided for high performance bolometer；
(2) photoresponse value Rv=2.6 × 10 of bolometer of the present invention3V/(Wmm-2), better than the overwhelming majority
The performance of existing bolometer has effectively pushed the development of non-refrigeration type infrared detector.
Description of the drawings
Fig. 1 is the structural schematic diagram of the bolometer described in the embodiment of the present invention 1；
Wherein, 1- vulcanizes tantalum films, and 2- supports electrode, 3- reading circuits.
Specific implementation mode
For the present invention is better described, it is easy to understand technical scheme of the present invention, below further specifically to the present invention
It is bright.But following embodiments is only the simple example of the present invention, does not represent or limit the scope of the present invention, this
Invention protection domain is subject to claims.
Specific embodiment of the invention part provides a kind of based on the bolometer for vulcanizing tantalum films and its preparation side
Method and purposes, the bolometer includes vulcanization tantalum films 1, support electrode 2 and reading circuit 3, wherein vulcanization tantalum films 1 are outstanding
Sky is positioned on support electrode 2, and support electrode 2 is connect with reading circuit 3.
The preparation method of the bolometer includes the following steps：
Vulcanization tantalum films are prepared in substrate by low-pressure chemical vapor deposition, then substrate is removed and tantalum films will be vulcanized
It is transferred on support electrode, forms bolometer；
Wherein, the low pressure finger pressure is 1Torr~7.5Torr.
It is present invention typical case but non-limiting embodiment below：
Embodiment 1：
A kind of bolometer and preparation method thereof based on vulcanization tantalum films is present embodiments provided, as shown in Figure 1, institute
State the vulcanization tantalum films 1, support electrode 2 and reading circuit 3 that bolometer includes 1T phases；
Wherein, vulcanization tantalum films 1 are hanging is positioned on support electrode 2, and support electrode 2 is connect with reading circuit 3；Support electricity
Pole 2 includes supporting layer and the electricity channel in supporting layer, and the connection of electricity channel vulcanizes tantalum films 1 and reading circuit 3, support
The material of layer is Si3N4, electricity channel is conductive metal nickel-cadmium；The thickness for vulcanizing tantalum films 1 is 200nm, and shape is side
The size of shape, the channel width of overhanging portion is 1mm~2mm.
The preparation method of the bolometer includes the following steps：
(1) in tube furnace, using tantalic chloride and sulphur powder as source, the mass ratio of tantalic chloride and sulphur powder is 1:10, by five
Tantalic chloride be heated to 140 DEG C, sulphur powder be passed through tube furnace after being heated to 155 DEG C, by low-pressure chemical vapor deposition method in mica
Growth vulcanization tantalum films in substrate, the central temperature of tube furnace is 850 DEG C, and growth time 10min is grown in mica substrate
Go out the vulcanization tantalum films that thickness is 200nm or so；
(2) mica substrate for being removed vulcanization tantalum films by wet method transfer using diluted hydrofluoric acid, is become hanging
Vulcanization tantalum films, and by hanging vulcanization tantalum films move on to support electrode on, support electrode connect with reading circuit.
The present embodiment vulcanization tantalum films obtained have in 340K or so by nearly commensurability charge density wave (NCCDW) phase transition
For the charge density wave phase change characteristics of non-commensurability charge density wave (ICCDW) phase, resistance strongly reduces, temperature-coefficient of electrical resistance
(TCR) reach -33%/K, photoresponse value Rv=2.6 × 103V/(Wmm-2), better than most existing bolometers
Performance.
Embodiment 2：
Present embodiments provide a kind of bolometer and preparation method thereof based on vulcanization tantalum films, the survey radiant heat
Structure is counted with reference to structure in embodiment 1, is differed only in：The thickness for vulcanizing tantalum films 1 is 1nm, the ditch road width of overhanging portion
The size of degree is 10 μm.
The preparation method of the bolometer is differed only in reference to method in embodiment 1：Tantalic chloride and sulphur powder
Mass ratio is 1:12, by tantalic chloride be heated to 140 DEG C, sulphur powder be heated to 155 DEG C after be passed through tube furnace, vulcanize the life of tantalum films
Long temperature is 850 DEG C, growth time 1min.
Vulcanize the performance of tantalum films and the performance for vulcanizing tantalum films in embodiment 1 in bolometer made from the present embodiment
It is close.
Embodiment 3：
Present embodiments provide a kind of bolometer and preparation method thereof based on vulcanization tantalum films, the survey radiant heat
Structure is counted with reference to structure in embodiment 1, is differed only in：The thickness for vulcanizing tantalum films 1 is 100nm, the raceway groove of overhanging portion
The size of width is 3mm.
The preparation method of the bolometer is differed only in reference to method in embodiment 1：Tantalic chloride and sulphur powder
Mass ratio is 1:15, by tantalic chloride be heated to 140 DEG C, sulphur powder be heated to 155 DEG C after be passed through tube furnace, vulcanize the life of tantalum films
Long temperature is 850 DEG C, growth time 6min.
Vulcanize the performance of tantalum films and the performance for vulcanizing tantalum films in embodiment 1 in bolometer made from the present embodiment
It is close.
Embodiment 4：
The purposes for present embodiments providing bolometer obtained in a kind of embodiment 1, is used to carry out infrared acquisition,
The bolometer makes vulcanization tantalum films that vacuum state, the pressure of vacuum state be kept to be less than 1 × 10 when measuring- 4The input voltage of mbar, bolometer are trapezoidal pulse voltage.
Embodiment 5：
The purposes for present embodiments providing bolometer obtained in a kind of embodiment 1, is used for infrared imaging, described
Bolometer makes vulcanization tantalum films that vacuum state, the pressure of vacuum state be kept to be less than 1 × 10 when measuring-4Mbar is surveyed
The input voltage of bolometer is trapezoidal pulse voltage.
Embodiment 6：
The purposes for present embodiments providing bolometer obtained in a kind of embodiment 1, is used for thermal imaging, the survey
Bolometer makes vulcanization tantalum films that vacuum state, the pressure of vacuum state be kept to be less than 1 × 10 when measuring-4Mbar surveys spoke
The input voltage for penetrating heat meter is trapezoidal pulse voltage.
The electricity of the transformation temperature position of bolometer of the present invention is can be seen that with comparative example based on the above embodiments
Temperature coefficient (TCR) reachable -33%/K is hindered, the temperature-coefficient of electrical resistance of traditional mainstream thermo-sensitive material is much larger than, is high performance
Bolometer provides material foundation；
Photoresponse value Rv=2.6 × 10 of bolometer of the present invention3V/(Wmm-2), it is existing better than most
Bolometer performance, effectively pushed the development of non-refrigeration type infrared detector.
Applicant states that the present invention illustrates detailed process equipment and the technological process of the present invention by above-described embodiment,
But the invention is not limited in above-mentioned detailed process equipment and technological processes, that is, it is above-mentioned detailed not mean that the present invention has to rely on
Process equipment and technological process could be implemented.Person of ordinary skill in the field it will be clearly understood that any improvement in the present invention,
The addition of equivalence replacement and auxiliary element to each material of product of the present invention, the selection etc. of concrete mode all fall within the present invention's
Within protection domain and the open scope.
Claims (10)
1. a kind of bolometer, which is characterized in that the bolometer includes vulcanization tantalum films, support electrode and reads electricity
Road, wherein vulcanization tantalum films are vacantly positioned on support electrode, support electrode is connect with reading circuit.
2. according to the bolometer required described in 1, which is characterized in that the support electrode include supporting layer and be set to supporting layer
Interior electricity channel, the electricity channel connection vulcanization tantalum films and reading circuit；
Preferably, the material of the supporting layer is Si3N4；
Preferably, the electricity channel is conductive metal, preferably nickel-cadmium.
3. according to the bolometer required described in 1 or 2, which is characterized in that the vulcanization tantalum films are 1T phases；
Preferably, the thickness of the vulcanization tantalum films is 0.8nm~200nm；
Preferably, the size of the channel width of the vulcanization tantalum films overhanging portion is 10 μm~3mm.
4. a kind of preparation method such as requiring 1-3 any one of them bolometers, which is characterized in that the method includes with
Lower step：
Vulcanization tantalum films are prepared in substrate by low-pressure chemical vapor deposition, then substrate is removed and shifts vulcanization tantalum films
Onto support electrode, bolometer is formed；
Wherein, the low pressure finger pressure is 1Torr~7.5Torr.
5. preparation method according to claim 4, which is characterized in that described prepared by low-pressure chemical vapor deposition vulcanizes
Tantalum films specifically include following steps：
Using tantalic chloride and sulphur powder as source, vulcanization tantalum films, life are grown in substrate by low-pressure chemical vapor deposition method
Long temperature is 810 DEG C~850 DEG C, and growth time is 1min~10min；
Preferably, the growth temperature is 850 DEG C, growth time 10min.
6. preparation method according to claim 4 or 5, which is characterized in that the low-pressure chemical vapor deposition is in tube furnace
Middle progress；
Preferably, the substrate includes mica and/or polishing monocrystalline silicon piece.
7. according to claim 4-6 any one of them preparation methods, which is characterized in that the quality of the tantalic chloride and sulphur powder
Than being 1:(10~15), preferably 1:10；
Preferably, low-pressure chemical vapor deposition is carried out after the tantalic chloride is heated, heating temperature is 130 DEG C~150 DEG C；
Preferably, low-pressure chemical vapor deposition is carried out after the sulphur powder is heated, heating temperature is 150 DEG C~160 DEG C.
8. according to claim 4-7 any one of them preparation methods, which is characterized in that shifted by wet method and remove substrate；
Preferably, wet method removal is carried out using a concentration of 3%~6% hydrofluoric acid in the wet method transfer, it is preferred to use concentration
For 4% hydrofluoric acid.
9. a kind of purposes such as requiring 1-3 any one of them bolometers, which is characterized in that the pyranometer is for red
Outer detection, infrared imaging and thermal imaging field.
10. purposes according to claim 9, which is characterized in that the bolometer makes vulcanization tantalum films when measuring
Keep vacuum state；
Preferably, the pressure of the vacuum state is less than 1 × 10-4mbar；
Preferably, the input voltage of the bolometer is trapezoidal pulse voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810359376.XA CN108458789A (en) | 2018-04-20 | 2018-04-20 | A kind of bolometer and its preparation method and application based on vulcanization tantalum films |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810359376.XA CN108458789A (en) | 2018-04-20 | 2018-04-20 | A kind of bolometer and its preparation method and application based on vulcanization tantalum films |
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| CN108458789A true CN108458789A (en) | 2018-08-28 |
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| CN201810359376.XA Pending CN108458789A (en) | 2018-04-20 | 2018-04-20 | A kind of bolometer and its preparation method and application based on vulcanization tantalum films |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111525028A (en) * | 2020-04-26 | 2020-08-11 | 天津理工大学 | Low-temperature variable resistor regulated by electric pulse |
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