CN101710569A - Method for adulterating n-type and p-type III-V group nitrides - Google Patents
Method for adulterating n-type and p-type III-V group nitrides Download PDFInfo
- Publication number
- CN101710569A CN101710569A CN200910241697A CN200910241697A CN101710569A CN 101710569 A CN101710569 A CN 101710569A CN 200910241697 A CN200910241697 A CN 200910241697A CN 200910241697 A CN200910241697 A CN 200910241697A CN 101710569 A CN101710569 A CN 101710569A
- Authority
- CN
- China
- Prior art keywords
- type
- iii
- family
- organic source
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a method for adulterating n-type and p-type III-V group nitrides; the n-type and p-type III-V nitrides epitaxially grown on the underlayment of sapphire, SiC and GaN use SiH4 and/or Cp2Mg as doping agent and the method of alternating the source supplying gas to realize the effective adulteration of n type and p type. The application of the invention realizes effective adulteration of n type and p type III-V group nitrides by using Si and Mg, thereby being capable of improving the crystal quality of material, reducing the displacement of material, improving the adulterating efficiency and consistency of n type and p type III-V group nitrides; after the adulterating efficiency and consistency of n type and p type III-V group nitrides are increased, the adulterating zone of n type and p type of GaN base LED and LD can be reduced, thereby improving the efficiency thereof by using the MOCVD extension and saving the material of extension and consumed energy source.
Description
Technical field
The present invention relates to utilize silicon and magnesium to the technical field that the III-V nitride carries out n type and the doping of p type, relate in particular to a kind of method of the III-V nitride being carried out n type and the doping of p type.
Background technology
GaN, InGaN, AlGaN, AlInGaN, III-V compounds of group such as AlInN owing to the extensive use in fields such as photoelectrons, have caused the concern of interior researcher of world wide and industrial circle.The research of GaN starts from the '30s in last century, and the research at initial stage is only limited to the GaN powder crystal, up to six the seventies, along with the research and development of MOCVD and MBE homepitaxy equipment, just the GaN thin-film material has been had further and has understood.
Because the fusing point and the saturated vapor pressure of GaN crystal are very high, be difficult to make the monocrystal of GaN by the method for fusion, so GaN material and device generally be on foreign substrate such as sapphire, silicon chip, carry out epitaxially grown.But very big of the lattice constant of foreign substrate such as sapphire, silicon chip and GaN and difference of thermal expansion coefficients so exist misfit dislocation on the GaN film of extension on these substrates, is unfavorable for that the performance of GaN base electronic devices and components improves.So during extension GaN film, it is extremely important that the selection of resilient coating just seems on foreign substrate such as sapphire, silicon chip.
In the heteroepitaxy development of GaN material, the work with decision meaning is to be finished by the group that Akasaki leads.1986, they used low temperature AI N resilient coating heteroepitaxy GaN film on Sapphire Substrate, and they find that the crystal mass of GaN epitaxial film has had very big improvement as a result, and background election concentration has also reduced a lot.Soon, Nakamura leader's group finds that low temperature GaN resilient coating also can greatly improve the crystal mass of GaN.
The another one difficulty of making GaN base optical electronic and microelectronic component is that the n type and the p type of GaN sill mixes.We know that making GaN base LED must have the electronics of sufficient amount and hole to inject, and Si and Mg are the most effective dopants of III-V nitride.
When the Al component was low, Si was the shallow donor in AlGaN, and still along with the increase of Al component, the ionization energy of Si can increase, and finally is converted into deep energy level DX center.Simultaneously, as n type compensation center, the room (V of III family
GaAnd V
Al) concentration also can increase along with the increase of Al component.And Si mixes the tensile strain that also can increase in the material, when mixing Si when dense even can cause the generation of crackle.These have all increased the difficulty of n type low-resistance AlGaN (particularly high Al component) material growth.
And p section bar material is one of difficult point of nitride always.The ionization energy of Mg in the GaN sill is very high, 150mev in GaN.And in the AlGaN material, effective doping of Mg is difficulty more just, because along with the increase of Al component, the ionization energy of Mg increases sharply, the ionization energy of Mg has reached 500mev in the AlN material.So the activation of Mg is difficulty very.Be easy to form nitrogen room (V in the GaN sill
N) this p type compensation center.In order to improve the activation efficiency of Mg impurity, people such as Nakamura adopt the p type AlGaN/GaN superlattice of modulation doping to replace even doped p type AlGaN, improve the ionizing efficiency of Mg, thereby improve the concentration in hole greatly.Very strong internal electric field is arranged among the AlGaN/GaN under polarization, and this makes the top of valence band indentation, thereby some Mg impurity energy levels can drop on the Fermi energy level and ionization once.But the top of valence band of AlGaN/GaN superlattice is a lot of periodic holes potential barriers, and this is unfavorable for the vertical transport in hole.People such as Kauser adopt the Al of Al content gradually variational
xGa
1-xThe N layer replaces the AlGaN layer of original one-component, makes polarization charge become the even distribution in space from original Two dimensional Distribution at the interface, greatly reduces the hole potential barrier like this, has improved the vertical electricity in hole and has led.The method that people such as M.L.Nakarmi adopt Mg delta to mix improves the doping efficiency of Mg in the AlGaN material.After the AlGaN layer about growth 15nm, interrupt Al, the input in Ga source, only logical Mg and NH
3
Summary of the invention
(1) technical problem that will solve
Main purpose of the present invention is to provide a kind of method that the III-V nitride is carried out n type and the doping of p type, to realize utilizing Si and the Mg III-V nitride to be carried out effective doping of n type and p type.
(2) technical scheme
For achieving the above object, the invention provides a kind of method that the III-V nitride is carried out n type and the doping of p type, this method comprises:
Step 1: feed organic source of III family and the NH of V family
3
Step 2: close the organic source of III family, feed SiH
4Or Cp
2Mg mixes;
Step 3: close SiH
4Or Cp
2Mg, repeating step 1 and 2 is to needed epitaxy layer thickness.
In the such scheme, when closing the organic source of III family described in the step 2, the duration that feeds the organic source of III family is 10 seconds.
In the such scheme, close SiH described in the step 3
4Or Cp
2During Mg, feed SiH
4Or Cp
2The duration of Mg is 10 seconds.
In the such scheme, close the organic source of III family described in the step 2, feeding SiH
4Or Cp
2When Mg mixes, the NH of V family
3It is uninterrupted to continue air feed.
For achieving the above object, the present invention also provides a kind of method that the III-V nitride is carried out n type and the doping of p type, and this method comprises:
Step 1: feed organic source of III family and Cp
2Mg;
Step 2: close organic source of III family and Cp
2Mg feeds the V NH of family
3Carry out air feed;
Step 3: close the NH of V family
3, repeating step 1 and 2 is to needed epitaxy layer thickness.
In the such scheme, close organic source of III family and Cp described in the step 2
2During Mg, feed organic source of III family and Cp
2The duration of Mg is 10 seconds.
In the such scheme, close the NH of V family described in the step 3
3The time, feed the V NH of family
3Duration be 10 seconds.
For achieving the above object, the invention provides a kind of method that the III-V nitride is carried out n type and the doping of p type, this method comprises:
Step 1: feed the organic source of III family;
Step 2: close the organic source of III family, feed SiH
4With the NH of V family
3Carry out air feed;
Step 3: close SiH
4With the NH of V family
3, repeating step 1 and 2 is to needed epitaxy layer thickness.
In the such scheme, when closing the organic source of III family described in the step 2, the duration that feeds the organic source of III family is 10 seconds.
In the such scheme, close SiH described in the step 3
4With the NH of V family
3The time, feed SiH
4With the NH of V family
3Duration be 10 seconds.
(3) beneficial effect
This method of the III-V nitride being carried out n type and the doping of p type provided by the invention, realized utilizing Si and Mg the III-V nitride to be carried out effective doping of n type and p type, not only can improve the crystal mass of material, reduce the dislocation of material, and can improve the n type of III-V nitride and the doping efficiency and the concentration of p type.After the doping efficiency and concentration that have improved n type and p type III-V nitride, can carry out attenuate to n type and the p type doped region of GaN base LED and LD, improved the efficient of utilizing the MOCVD extension, saved the material of extension and the energy of consumption.
Description of drawings
Fig. 1 is for carrying out the method flow diagram of n type and the doping of p type to the III-V nitride according to first embodiment of the invention;
Fig. 2 is for carrying out the method flow diagram of n type and the doping of p type to the III-V nitride according to second embodiment of the invention;
Fig. 3 is for carrying out the method flow diagram of n type and the doping of p type to the III-V nitride according to third embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention is epitaxially grown n type and p type III-V group-III nitride on substrates such as sapphire, SiC, GaN, uses SiH
4And/or Cp
2Mg uses the effective doping that alternately realizes n type and p type for the mode of source gas as dopant, and concrete step is as follows:
Method 1:
A kind of method that the III-V nitride is carried out n type and the doping of p type, this method comprises:
Step 1: feed organic source of III family and the NH of V family
3
Step 2: the duration that feeds the organic source of III family is 10 seconds, closes the organic source of III family, feeds SiH
4Or Cp
2Mg mixes;
In this step, the described organic source of III family of closing feeds SiH
4Or Cp
2When Mg mixes, the NH of V family
3It is uninterrupted to continue air feed;
Step 3: feed SiH
4Or Cp
2The duration of Mg is 10 seconds, closes SiH
4Or Cp
2Mg, repeating step 1 and 2 is to needed epitaxy layer thickness.
Method 2:
A kind of method that the III-V nitride is carried out n type and the doping of p type, this method comprises:
Step 1: feed organic source of III family and Cp
2Mg;
Step 2: feed organic source of III family and Cp
2The duration of Mg is 10 seconds, closes organic source of III family and Cp
2Mg feeds the V NH of family
3Carry out air feed;
Step 3: feed the V NH of family
3Duration be 10 seconds, close the NH of V family
3, repeating step 1 and 2 is to needed epitaxy layer thickness.
Method 3:
A kind of method that the III-V nitride is carried out n type and the doping of p type, this method comprises:
Step 1: feed the organic source of III family;
Step 2: the duration that feeds the organic source of III family is 10 seconds, closes the organic source of III family, feeds SiH
4With the NH of V family
3Carry out air feed;
Step 3: feed SiH
4With the NH of V family
3Duration be 10 seconds, close SiH
4With the NH of V family
3, repeating step 1 and 2 is to needed epitaxy layer thickness.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. one kind is carried out the method that n type and p type mix to the III-V nitride, it is characterized in that this method comprises:
Step 1: feed organic source of III family and the NH of V family
3
Step 2: close the organic source of III family, feed SiH
4Or Cp
2Mg mixes;
Step 3: close SiH
4Or Cp
2Mg, repeating step 1 and 2 is to needed epitaxy layer thickness.
2. according to claim 1 the III-V nitride is carried out the method that n type and p type mix, it is characterized in that, when closing the organic source of III family described in the step 2, the duration that feeds the organic source of III family is 10 seconds.
3. the method that the III-V nitride is carried out n type and the doping of p type according to claim 1 is characterized in that, closes SiH described in the step 3
4Or Cp
2During Mg, feed SiH
4Or Cp
2The duration of Mg is 10 seconds.
4. the method that the III-V nitride is carried out n type and the doping of p type according to claim 1 is characterized in that, is closing the organic source of III family described in the step 2, feeds SiH
4Or Cp
2When Mg mixes, the NH of V family
3It is uninterrupted to continue air feed.
5. one kind is carried out the method that n type and p type mix to the III-V nitride, it is characterized in that this method comprises:
Step 1: feed organic source of III family and Cp
2Mg;
Step 2: close organic source of III family and Cp
2Mg feeds the V NH of family
3Carry out air feed;
Step 3: close the NH of V family
3, repeating step 1 and 2 is to needed epitaxy layer thickness.
6. the method that the III-V nitride is carried out n type and the doping of p type according to claim 5 is characterized in that, closes organic source of III family and Cp described in the step 2
2During Mg, feed organic source of III family and Cp
2The duration of Mg is 10 seconds.
7. the method that the III-V nitride is carried out n type and the doping of p type according to claim 5 is characterized in that, closes the NH of V family described in the step 3
3The time, feed the V NH of family
3Duration be 10 seconds.
8. one kind is carried out the method that n type and p type mix to the III-V nitride, it is characterized in that this method comprises:
Step 1: feed the organic source of III family;
Step 2: close the organic source of III family, feed SiH
4With the NH of V family
3Carry out air feed;
Step 3: close SiH
4With the NH of V family
3, repeating step 1 and 2 is to needed epitaxy layer thickness.
9. according to claim 8 the III-V nitride is carried out the method that n type and p type mix, it is characterized in that, when closing the organic source of III family described in the step 2, the duration that feeds the organic source of III family is 10 seconds.
10. the method that the III-V nitride is carried out n type and the doping of p type according to claim 8 is characterized in that, closes SiH described in the step 3
4With the NH of V family
3The time, feed SiH
4With the NH of V family
3Duration be 10 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910241697A CN101710569A (en) | 2009-12-02 | 2009-12-02 | Method for adulterating n-type and p-type III-V group nitrides |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910241697A CN101710569A (en) | 2009-12-02 | 2009-12-02 | Method for adulterating n-type and p-type III-V group nitrides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101710569A true CN101710569A (en) | 2010-05-19 |
Family
ID=42403346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910241697A Pending CN101710569A (en) | 2009-12-02 | 2009-12-02 | Method for adulterating n-type and p-type III-V group nitrides |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101710569A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579425A (en) * | 2013-11-14 | 2014-02-12 | 中国科学院半导体研究所 | Gallium nitride series light-emitting diode and manufacturing method |
| CN103854976A (en) * | 2014-03-20 | 2014-06-11 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method with p-layer special doped structure |
| CN105280768A (en) * | 2015-09-18 | 2016-01-27 | 华灿光电股份有限公司 | Epitaxial wafer growth method having high luminescence efficiency |
| CN111710762A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
-
2009
- 2009-12-02 CN CN200910241697A patent/CN101710569A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579425A (en) * | 2013-11-14 | 2014-02-12 | 中国科学院半导体研究所 | Gallium nitride series light-emitting diode and manufacturing method |
| CN103854976A (en) * | 2014-03-20 | 2014-06-11 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method with p-layer special doped structure |
| CN103854976B (en) * | 2014-03-20 | 2017-01-04 | 西安神光皓瑞光电科技有限公司 | A kind of epitaxial growth method with the special doped structure of p layer |
| CN105280768A (en) * | 2015-09-18 | 2016-01-27 | 华灿光电股份有限公司 | Epitaxial wafer growth method having high luminescence efficiency |
| CN105280768B (en) * | 2015-09-18 | 2018-10-09 | 华灿光电股份有限公司 | Epitaxial wafer growth method with high-luminous-efficiency |
| CN111710762A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7615772B2 (en) | Nitride semiconductor LED and fabrication method thereof | |
| TW558845B (en) | III-Nitride light emitting devices with low driving voltage | |
| CN104919604B (en) | Nitride semiconductor luminescent element | |
| CN101556915B (en) | Co-doping for fermi level control in semi-insulating group III nitrides | |
| CN103165777B (en) | There is LED and the growing method thereof of the N-type insert layer of trapezium structure | |
| CN103730557A (en) | Light-emitting diode with novel P-type electron barrier layer structure and growth method | |
| CN106159048B (en) | A kind of LED epitaxial slice and its growing method | |
| CN102931303A (en) | Epitaxial structure and growing method thereof | |
| CN106328771B (en) | A method of the extension flawless high-crystal quality LED epitaxial layers in nitride metal gallium compound substrate | |
| CN101728472A (en) | Multilayer LED chip structure and preparation method thereof | |
| CN101847577B (en) | Manufacturing method of group iii nitride semiconductor | |
| CN103824917B (en) | LED manufacturing method, LED and chip | |
| CN102867892A (en) | In-doped low-temperature growth P type GaN epitaxial method | |
| CN105070807A (en) | Epitaxial structure increasing GaN-based reverse voltage and growth method thereof | |
| CN101740360B (en) | Method for improving doping efficiency of magnesium in III-V family nitrides | |
| CN109360878A (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| CN101710569A (en) | Method for adulterating n-type and p-type III-V group nitrides | |
| CN108808446B (en) | GaN-based laser epitaxial structure with dislocation fracture structure and growth method thereof | |
| CN105428477A (en) | GaN-based LED epitaxial wafer and preparation method therefor | |
| CN109244199A (en) | A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode | |
| JP2006114652A (en) | Semiconductor epitaxial wafer and field effect transistor | |
| JP2006114655A (en) | Semiconductor epitaxial wafer and field effect transistor | |
| JP3987360B2 (en) | Epitaxial substrate, epitaxial substrate for electronic device, and electronic device | |
| CN101740690A (en) | Method for improving activation efficiency of magnesium in III-V family nitrides | |
| WO2020052558A1 (en) | Semiconductor chip for light emitting diode, quantum well layer of semiconductor chip, and manufacturing method for semiconductor chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100519 |