CN101689563A - 高电压GaN基异质结晶体管结构及其形成方法 - Google Patents

高电压GaN基异质结晶体管结构及其形成方法 Download PDF

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Publication number
CN101689563A
CN101689563A CN200880009090A CN200880009090A CN101689563A CN 101689563 A CN101689563 A CN 101689563A CN 200880009090 A CN200880009090 A CN 200880009090A CN 200880009090 A CN200880009090 A CN 200880009090A CN 101689563 A CN101689563 A CN 101689563A
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active layer
layer
semiconductor device
active
substrate
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CN200880009090A
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Chinese (zh)
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迈克尔·墨菲
米兰·波普赫里斯蒂奇
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Power Integrations Inc
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Velox Semiconductor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200880009090A 2007-03-20 2008-03-20 高电压GaN基异质结晶体管结构及其形成方法 Pending CN101689563A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/725,820 2007-03-20
US11/725,820 US20090321787A1 (en) 2007-03-20 2007-03-20 High voltage GaN-based heterojunction transistor structure and method of forming same
PCT/US2008/057613 WO2008116046A1 (en) 2007-03-20 2008-03-20 High voltage gan-based heterojunction transistor structure and method of forming same

Publications (1)

Publication Number Publication Date
CN101689563A true CN101689563A (zh) 2010-03-31

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CN200880009090A Pending CN101689563A (zh) 2007-03-20 2008-03-20 高电压GaN基异质结晶体管结构及其形成方法

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Country Link
US (1) US20090321787A1 (https=)
EP (1) EP2135285A4 (https=)
JP (1) JP2010522435A (https=)
KR (1) KR20090128505A (https=)
CN (1) CN101689563A (https=)
WO (1) WO2008116046A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881794A (zh) * 2011-07-12 2013-01-16 三星电子株式会社 氮化物半导体发光器件
CN102923635A (zh) * 2012-10-26 2013-02-13 中国科学院苏州纳米技术与纳米仿生研究所 纳米流体二极管及其制造方法
CN103247695A (zh) * 2012-02-06 2013-08-14 三星电子株式会社 氮化物基异质结半导体器件及其制造方法
CN103489968A (zh) * 2013-09-09 2014-01-01 中国科学院半导体研究所 利用AlInGaN制作氮化镓外延薄膜的方法
WO2020047814A1 (zh) * 2018-09-07 2020-03-12 苏州晶湛半导体有限公司 半导体结构及其制备方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5024307B2 (ja) * 2009-02-06 2012-09-12 日立電線株式会社 電界効果型トランジスタ用窒化物半導体エピタキシャルウェハの製造方法
JP2010206125A (ja) * 2009-03-06 2010-09-16 Oki Electric Ind Co Ltd 窒化ガリウム系高電子移動度トランジスタ
KR101660870B1 (ko) * 2009-04-08 2016-09-28 이피션트 파워 컨버젼 코퍼레이션 보상형 게이트 미스페트
CN101710590B (zh) * 2009-10-30 2011-12-07 西安电子科技大学 AlGaN/GaN绝缘栅高电子迁移率晶体管的制作方法
WO2011066862A1 (en) * 2009-12-03 2011-06-09 Epcos Ag Bipolar transistor with lateral emitter and collector and method of production
PH12012501704B1 (en) * 2010-05-28 2018-11-14 Mjn Us Holdings Llc Nutritional compositions
JP5777586B2 (ja) * 2012-09-20 2015-09-09 株式会社東芝 半導体装置及びその製造方法
US9048838B2 (en) * 2013-10-30 2015-06-02 Infineon Technologies Austria Ag Switching circuit
US9525063B2 (en) 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Switching circuit
JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
US11799000B1 (en) 2022-12-21 2023-10-24 Hiper Semiconductor Inc. High electron mobility transistor and high electron mobility transistor forming method

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US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
US6635559B2 (en) * 2001-09-06 2003-10-21 Spire Corporation Formation of insulating aluminum oxide in semiconductor substrates
JP4134575B2 (ja) * 2002-02-28 2008-08-20 松下電器産業株式会社 半導体装置およびその製造方法
US7026665B1 (en) * 2003-09-19 2006-04-11 Rf Micro Devices, Inc. High voltage GaN-based transistor structure
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
EP2273553B1 (en) 2004-06-30 2020-02-12 IMEC vzw A method for fabricating AlGaN/GaN HEMT devices
US7547928B2 (en) * 2004-06-30 2009-06-16 Interuniversitair Microelektronica Centrum (Imec) AlGaN/GaN high electron mobility transistor devices
JP4514584B2 (ja) * 2004-11-16 2010-07-28 富士通株式会社 化合物半導体装置及びその製造方法
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
JP4912604B2 (ja) * 2005-03-30 2012-04-11 住友電工デバイス・イノベーション株式会社 窒化物半導体ｈｅｍｔおよびその製造方法。

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881794A (zh) * 2011-07-12 2013-01-16 三星电子株式会社 氮化物半导体发光器件
CN103247695A (zh) * 2012-02-06 2013-08-14 三星电子株式会社 氮化物基异质结半导体器件及其制造方法
CN102923635A (zh) * 2012-10-26 2013-02-13 中国科学院苏州纳米技术与纳米仿生研究所 纳米流体二极管及其制造方法
CN102923635B (zh) * 2012-10-26 2015-06-03 中国科学院苏州纳米技术与纳米仿生研究所 纳米流体二极管及其制造方法
CN103489968A (zh) * 2013-09-09 2014-01-01 中国科学院半导体研究所 利用AlInGaN制作氮化镓外延薄膜的方法
CN103489968B (zh) * 2013-09-09 2015-11-18 中国科学院半导体研究所 利用AlInGaN制作氮化镓外延薄膜的方法
WO2020047814A1 (zh) * 2018-09-07 2020-03-12 苏州晶湛半导体有限公司 半导体结构及其制备方法
US11361963B2 (en) 2018-09-07 2022-06-14 Enkris Semiconductor, Inc. Semiconductor structure and method for manufacturing the same

Also Published As

Publication number Publication date
WO2008116046A1 (en) 2008-09-25
US20090321787A1 (en) 2009-12-31
JP2010522435A (ja) 2010-07-01
KR20090128505A (ko) 2009-12-15
EP2135285A1 (en) 2009-12-23
EP2135285A4 (en) 2011-06-22

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