CN101685775B - 元件的制造方法 - Google Patents
元件的制造方法 Download PDFInfo
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- CN101685775B CN101685775B CN2008101657725A CN200810165772A CN101685775B CN 101685775 B CN101685775 B CN 101685775B CN 2008101657725 A CN2008101657725 A CN 2008101657725A CN 200810165772 A CN200810165772 A CN 200810165772A CN 101685775 B CN101685775 B CN 101685775B
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- layer
- manufacture method
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 150000004767 nitrides Chemical class 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
- 238000002955 isolation Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 23
- 238000005121 nitriding Methods 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract 12
- 238000000926 separation method Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000007667 floating Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
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Abstract
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Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2008101657725A CN101685775B (zh) | 2008-09-23 | 2008-09-23 | 元件的制造方法 |
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CN2008101657725A CN101685775B (zh) | 2008-09-23 | 2008-09-23 | 元件的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101685775A CN101685775A (zh) | 2010-03-31 |
CN101685775B true CN101685775B (zh) | 2011-07-20 |
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CN2008101657725A Active CN101685775B (zh) | 2008-09-23 | 2008-09-23 | 元件的制造方法 |
Country Status (1)
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CN (1) | CN101685775B (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1606806A (zh) * | 2001-12-20 | 2005-04-13 | 皇家飞利浦电子股份有限公司 | 非易失存储单元的制造 |
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2008
- 2008-09-23 CN CN2008101657725A patent/CN101685775B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1606806A (zh) * | 2001-12-20 | 2005-04-13 | 皇家飞利浦电子股份有限公司 | 非易失存储单元的制造 |
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CN101685775A (zh) | 2010-03-31 |
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Owner name: POWERCHIP TECHNOLOGY CORPORATION Free format text: FORMER NAME: POWERCHIP SEMICONDUCTOR CORP. |
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Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerflash Technology Corporation Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
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Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |
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