CN101681970B - Semiconductor light emitting element and method for manufacturing the same - Google Patents
Semiconductor light emitting element and method for manufacturing the same Download PDFInfo
- Publication number
- CN101681970B CN101681970B CN2008800199380A CN200880019938A CN101681970B CN 101681970 B CN101681970 B CN 101681970B CN 2008800199380 A CN2008800199380 A CN 2008800199380A CN 200880019938 A CN200880019938 A CN 200880019938A CN 101681970 B CN101681970 B CN 101681970B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- gaas
- disposed
- metal level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 418
- 239000002184 metal Substances 0.000 claims abstract description 418
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 237
- 239000000758 substrate Substances 0.000 claims abstract description 196
- 238000010276 construction Methods 0.000 claims description 62
- 230000004888 barrier function Effects 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 35
- 239000010936 titanium Substances 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims 1
- 238000005253 cladding Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 440
- 239000011247 coating layer Substances 0.000 description 77
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 30
- 238000005304 joining Methods 0.000 description 15
- 238000002310 reflectometry Methods 0.000 description 13
- 229910015363 Au—Sn Inorganic materials 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000001579 optical reflectometry Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZODDGFAZWTZOSI-UHFFFAOYSA-N nitric acid;sulfuric acid Chemical compound O[N+]([O-])=O.OS(O)(=O)=O ZODDGFAZWTZOSI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A high luminance semiconductor light emitting device and a fabrication method for such semiconductor light emitting device are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal buffer layer, and a second metal buffer layer (4) and a second metal layer (5) disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (12), a metal contact layer (11) disposed on the third metal layer, a p type cladding layer (10) disposed on the metal contact layer, a multi-quantum well layer (9) disposed on the p type cladding layer, an n type cladding layer (8) disposed on the multi-quantum well layer, and a window layer (7) disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer (1) and the third metal layer (12).
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements and manufacture method thereof, particularly a kind of being characterised in that utilized wafer joining technique (wafer bonding)) will have that the light-emitting diode of metallic reflector and opaque substrate layer are pasted and the semiconductor light-emitting elements and the manufacture method thereof that form.
Background technology
In order to realize the high brightnessization of light-emitting diode (LED:Light Emitting Diode), as the reflection of light layer, proposing has the structure that forms metallic reflector between substrate and the active layer by Multiple Quantum Well (MQW:Multi-Quantum Well) layer formation.As the method that forms such metallic reflector, the wafer that for example discloses the substrate of led layers engages (applying) technology (for example, with reference to patent documentation 1 and patent documentation 2).
The purpose of patent documentation 1 and patent documentation 2 is to provide a kind of manufacturing manufacturing method for LED, this light-emitting diode has required mechanical property and light transmission, and can make the interfacial resistivity between hyaline layer and the grown layer reach Min., this manufacture method is characterised in that, on interim growth substrates, led layers is grown successively, after forming the light emitting diode construction of thinner layer, remove interim growth substrates, replace interim growth substrates on its position on as the led layers of the resilient coating of lower floor with conductivity, light transmissive substrate is carried out wafer and is engaged, and makes light-emitting diode.In patent documentation 1 and patent documentation 2, GaP and sapphire etc. is applicable to fit and uses substrate.
Fig. 1 to Fig. 3 represents to utilize the schematic cross section structure of the existing semiconductor light-emitting elements that the wafer joining technique forms.
For example, as shown in Figure 1, the conventional semiconductor light-emitting component has: be disposed at Au-Sn alloy-layer 14 on the GaAs substrate 15, be disposed at barrier metal layer 13 on the Au-Sn alloy-layer 14, be disposed at p type coating layer 10 on the barrier metal layer 13, be disposed at mqw layer 9 on the p type coating layer 10, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.
Conventional semiconductor light-emitting component shown in Figure 1, the metal that is used for fitting are the Au-Sn alloys.Because this Au-Sn alloy melting point is low, therefore can be at low temperatures will be used to constitute the Au-Sn alloy melting of the Au-Sn alloy of epitaxially grown layer one side of LED and GaAs substrate 15 1 sides and fits.
But, under the situation of using Au-Sn alloy-layer 14,,, as shown in Figure 1, need to add barrier metal layer 13 therefore for preventing the diffusion of Sn owing to can cause the thermal diffusion of Sn.In addition, there is the problem of light reflectivity difference in Au-Sn alloy-layer 14.
For example, existing other semiconductor light-emitting elements, as shown in Figure 2, have: be disposed at metallic reflector 16 on the GaAs substrate 15, be disposed at p type coating layer 10 on the metallic reflector 16, be disposed at mqw layer 9 on the p type coating layer 10, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.Conventional semiconductor light-emitting component shown in Figure 2, if the metallic reflector 16 that applying GaAs substrate 15 is made, thereby the absorption that can exist in metal and semi-conductive interface generation light can not catoptrical effectively problem.That is, exist in the problem that the absorption of light takes place for p type coating layer 10 and the interface of metallic reflector 16.
For semiconductor light-emitting elements (LED) is realized high brightnessization, between GaAs substrate and active layer (MQW), add the method for distributed Blatt reflective (DBR:Distributed Bragg Reflector) layer in addition as reflection layer.If do not add the LED of the structure of DBR, the light that is sent by mqw layer can be absorbed by the GaAs substrate, thereby causes deepening.Therefore, for the LED that will use the GaAs substrate realizes high brightnessization, for example, generally use DBR as the reflection of light layer.
Promptly, existing other other semiconductor light-emitting elements, as shown in Figure 3, have: be disposed at DBR layer 19 on the GaAs substrate 15, be disposed at p type coating layer 10 on the DBR layer 19, be disposed at mqw layer 9 on the p type coating layer 10, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.Conventional semiconductor light-emitting component shown in Figure 3, though between GaAs substrate 15 and mqw layer 9, used DBR layer 19 as the reflection of light layer, but 19 reflection of DBR layer are from the light of a certain direction incident, in case change incidence angle, the DBR layer just can not reverberation, thereby can't be seen through the problem of DBR layer 19 by 19 reflection of DBR layer with regard to the light that has other direction incidents beyond the direction from then on.Therefore, thus exist the light see through can be absorbed the problem of the luminosity that reduces semiconductor light-emitting elements (LED) by GaAs substrate 15.
The conventional semiconductor light-emitting component that utilizes the wafer joining technique to form using the Au-Sn alloy-layer as in the metal that is used to fit, for preventing the thermal diffusion of Sn, needs to add barrier metal layer.In addition, the light reflectivity of Au-Sn alloy-layer is poor.
In addition,, still can cause in metal and the generation light absorption of semi-conductive interface even form metallic reflector by the applying substrate, thus reverberation effectively.
In addition, when using the DBR layer as the reflector, as mentioned above, the DBR layer only reflects from the light of a certain direction incident, just can not reflected by the DBR layer in case change incidence angle, but see through the DBR layer, absorbed by the GaAs substrate, thus the luminosity of reduction LED.
And, the conventional semiconductor light-emitting component that utilizes the wafer joining technique to form, in the time of laminated semiconductor substrate, dielectric film, metal level, owing to have the difference of thermal coefficient of expansion and combining closely property problem, thereby have the problem that will peel off under the high temperature.
And, the semiconductor light-emitting elements and the manufacturing structure (for example, with reference to patent documentation 3) thereof that replace the wafer combination technology and use plastering agent that the laminate of Semiconductor substrate and semiconductor light-emitting elements is fitted are also disclosed.
Patent documentation 1: the spy opens flat 6-302857 communique
Patent documentation 2: United States Patent (USP) the 5th, 376, No. 580 specifications
Patent documentation 3: the spy opens the 2005-223207 communique
Summary of the invention
Invent technical problem to be solved
The object of the present invention is to provide a kind of semiconductor light-emitting elements and manufacture method thereof of high brightness, it uses opaque Semiconductor substrate such as GaAs or Si, utilizes the wafer joining technique, and combining closely property is carried out the applying of substrate well, forms metallic reflector.
In addition, the object of the present invention is to provide a kind of semiconductor light-emitting elements and manufacture method thereof of high brightness, by between metal and semiconductor, adding transparent dielectric film, avoid contacting of semiconductor and metal, prevent to take place the absorption of light, thereby form reflectivity good metal reflector at the interface of semiconductor and metal.
In addition, the object of the present invention is to provide a kind of semiconductor light-emitting elements and manufacture method thereof of high brightness, it uses metal level rather than DBR as reflection layer, thereby can reflect the light of any angle.
The means that the technical solution problem is adopted
According to the one embodiment of the present invention that is used to reach above-mentioned purpose, a kind of semiconductor light-emitting elements is provided, it is made of GaAs substrat structure and light emitting diode construction, and described GaAs substrat structure has: the surface is formed with the GaAs layer of a plurality of grooves, be configured in the described surface of described GaAs layer, the first metal buffer layer of the sidewall of described groove and the bottom surface of described groove, be disposed at the first metal layer on the described first metal buffer layer, be disposed at the second metal buffer layer at the back side of described GaAs layer, be disposed at the described second metal buffer layer and the lip-deep second metal level relative side of described GaAs layer; Described light emitting diode construction is disposed on the described GaAs substrat structure, and it has: the 3rd metal level, be disposed at metal contact layer on described the 3rd metal level, be disposed at p type coating layer on the described metal contact layer, be disposed at described p type coating layer multiple quantum well layer, be disposed at n type coating layer on the described multiple quantum well layer, be disposed at the window layer on the described n type coating layer; Use is configured in the described the first metal layer and described the 3rd metal level on the described surface of described GaAs layer, described light emitting diode construction and described GaAs substrat structure are fitted, between the described the first metal layer of described groove and described the 3rd metal level, have air gap simultaneously.
According to other execution modes of the present invention, a kind of semiconductor light-emitting elements is provided, it is made of GaAs substrate and the light emitting diode construction that the surface is formed with a plurality of grooves, and described light emitting diode construction has: on the described surface of described GaAs substrate, the metal level of the sidewall of described groove and the configuration of the bottom surface of described groove, be disposed on the described lip-deep metal level of described GaAs substrate and patterned metal contact layer and insulating barrier, be disposed at the p type coating layer (10) on the patterned described metal contact layer, be disposed at the multiple quantum well layer of described p type coating layer, be disposed at the n type coating layer on the described multiple quantum well layer, be disposed at the window layer on the described n type coating layer; Use is configured in the described lip-deep described metal level of described GaAs substrate, with described light emitting diode construction and described GaAs substrate attaching, simultaneously has air gap between the metal level of described groove and described light emitting diode construction.
According to other execution modes of the present invention, a kind of semiconductor light-emitting elements is provided, it is made of GaAs substrat structure and light emitting diode construction, and described GaAs substrat structure has: the surface is formed with the GaAs substrate of a plurality of grooves; Be configured in the first metal layer on the bottom surface of the sidewall of the described surface of described GaAs substrate, described groove and described groove; Described light emitting diode construction is disposed on the described GaAs substrat structure, and it has: second metal level, be disposed at p type coating layer on described second metal level, be disposed at multiple quantum well layer on the described p type coating layer, be disposed at n type coating layer on the described multiple quantum well layer, be disposed at the window layer on the described n type coating layer; Use the described lip-deep described the first metal layer and described second metal level of described GaAs substrate, described light emitting diode construction and described GaAs substrat structure are fitted, between the described the first metal layer of described groove and described light emitting diode construction, have air gap simultaneously.
According to other execution modes of the present invention, a kind of semiconductor light-emitting elements is provided, it has silicon substrate structure and LED structure, and described silicon substrate structure has: the surface is formed with the silicon substrate of a plurality of grooves; Be configured in the titanium layer on the bottom surface of the sidewall of the described surface of described silicon substrate, described groove and described groove; Be disposed at the first metal layer on the titanium layer; Described LED structure has: be disposed at second metal level on the described the first metal layer; Be disposed on described second metal level and patterned metal contact layer and insulating barrier; Be disposed on patterned metal contact layer and the described insulating barrier and have the epitaxially grown layer in roughened zone on the surface of exposing; Be disposed on the described epitaxially grown layer and patterned n type GaAs layer; Be disposed on the described n type GaAs layer and patterned surface electrode layer; Use the described lip-deep described the first metal layer and described second metal level of described silicon substrate, described light emitting diode construction and described silicon substrate structure are fitted, between the described the first metal layer of described groove and described LED structure, have air gap simultaneously.
According to other modes of the present invention, a kind of semiconductor light-emitting elements is provided, it has GaAs substrat structure and LED structure, described GaAs substrat structure has: the surface is formed with the GaAs substrate of a plurality of grooves, be configured in the metal buffer layer on the bottom surface of the sidewall of the described surface of described GaAs substrate, described groove and described groove, be disposed at the first metal layer on the described metal buffer layer; Described LED structure has: be disposed at second metal level on the described the first metal layer, be disposed on described second metal level and patterned metal contact layer and insulating barrier, be disposed on patterned described metal contact layer and the described insulating barrier and have the epitaxially grown layer in roughened zone on the surface of exposing, be disposed on the described epitaxially grown layer and patterned n type GaAs layer, be disposed at described n type GaAs layer and patterned surface electrode layer; Use the described lip-deep described the first metal layer and described second metal level of described GaAs substrate, described light emitting diode construction and described GaAs substrat structure are fitted, between second metal level that disposes on the described the first metal layer of described groove and described LED structure, have air gap simultaneously.
According to other modes of the present invention, a kind of manufacture method of semiconductor light-emitting elements is provided, it comprises: prepare to fit and use the step of light emitting diode construction with Semiconductor substrate structure and applying; In described Semiconductor substrate structure, after the surface of Semiconductor substrate forms a plurality of grooves, on described Semiconductor substrate, form the step of the first metal layer; In described light emitting diode construction, on the GaAs substrate, form the step of AlInGaP layer, n type GaAs layer, epitaxially grown layer successively; On described epitaxially grown layer, patterned relatively insulating barrier, the step of the formation metal contact layer and second metal level; Use the described lip-deep described the first metal layer of described Semiconductor substrate, by the thermo-compressed technology described applying is fitted with LED structure and described Semiconductor substrate, simultaneously the step of formation air gap between the described the first metal layer of described groove and described LED structure; Remove the step of described GaAs substrate by etching; Remove the step of described AlInGaP layer; Step with the surface electrode layer composition; Implement roughened, the step that the described n type GaAs layer beyond the described n type GaAs layer under the described surface electrode layer is removed.
The invention effect
According to semiconductor light-emitting elements of the present invention and manufacture method thereof, in order to solve the problem of the Sn diffusion that the Au-Sn alloy-layer causes, the metal level that use is made of Au, utilize the wafer joining technique that epitaxially grown layer and combining closely property of Semiconductor substrate are fitted well, thus, can not need barrier metal and, in the structure of LED one side, form light reflectivity good metal reflector, therefore can pursue the high brightnessization of LED by using the metal level that constitutes by Au.
According to semiconductor light-emitting elements of the present invention and manufacture method thereof, by between metallic reflector and semiconductor layer, adding transparent insulating film, can avoid semiconductor to contact with metallic reflector, prevent that the interface between semiconductor layer and metallic reflector from the absorption of light taking place, can form reflectivity good metal reflector, therefore can pursue the high brightnessization of LED.
According to semiconductor light-emitting elements of the present invention and manufacture method thereof, in order to prevent to be absorbed to the light of GaAs substrate incident, use metal to make light generation total reflection as the reflector, thereby can prevent to be absorbed to the light of GaAs substrate incident, can reflect the light of any angle, therefore can pursue the high brightnessization of LED.
Description of drawings
Fig. 1 is the cross-sectional view of conventional semiconductor light-emitting component.
Fig. 2 is other cross-sectional view of conventional semiconductor light-emitting component.
Fig. 3 is other cross-sectional view of conventional semiconductor light-emitting component.
Fig. 4 is the figure of the principle of explanation semiconductor light-emitting elements of embodiments of the present invention and manufacture method thereof, (a) be the cross-sectional view of GaAs substrate, (b) being cross-sectional view after wafer engages, (c) is the cross-sectional view after the chipization.
Fig. 5 is the cross-sectional view that is applicable to the p type GaAs substrate of the semiconductor light-emitting elements of first execution mode of the present invention and manufacture method thereof.
Fig. 6 is the cross-sectional view that is applicable to the n type GaAs substrate of the semiconductor light-emitting elements of first execution mode of the present invention and manufacture method thereof.
Fig. 7 is the cross-sectional view that is applicable to the LED of the semiconductor light-emitting elements of first execution mode of the present invention and manufacture method thereof.
Fig. 8 is the cross-sectional view of the semiconductor light-emitting elements of first execution mode of the present invention.
Fig. 9 is the cross-sectional view that is applicable to the LED of the semiconductor light-emitting elements of second execution mode of the present invention and manufacture method thereof.
Figure 10 is the cross-sectional view that is applicable to the LED of the semiconductor light-emitting elements of variation of second execution mode of the present invention and manufacture method thereof.
Figure 11 is the cross-sectional view of the semiconductor light-emitting elements of second execution mode of the present invention.
Figure 12 is the cross-sectional view that is applicable to the GaAs substrate of the semiconductor light-emitting elements of the 3rd execution mode of the present invention and manufacture method thereof.
Figure 13 is the cross-sectional view that is applicable to the LED of the semiconductor light-emitting elements of the 3rd execution mode of the present invention and manufacture method thereof.
Figure 14 is the cross-sectional view of the semiconductor light-emitting elements of the 3rd execution mode of the present invention.
Figure 15 is the cross-sectional view that is applicable to the Si substrate of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof.
Figure 16 is the cross-sectional view that is applicable to the LED of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof.
Figure 17 is the plane composition structural representation that is applicable to the LED of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof.
Figure 18 is other plane composition structural representations that are applicable to the LED of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof.
Figure 19 is the cross-sectional view of a step of the semiconductor light-emitting elements manufacture method of explanation the 4th execution mode of the present invention.
Figure 20 is the cross-sectional view of a step of the semiconductor light-emitting elements manufacture method of explanation the 4th execution mode of the present invention.
Figure 21 is the cross-sectional view of a step of the semiconductor light-emitting elements manufacture method of explanation the 4th execution mode of the present invention.
Figure 22 is the cross-sectional view of a step of the semiconductor light-emitting elements manufacture method of explanation the 4th execution mode of the present invention.
Figure 23 is the cross-sectional view of a step of the semiconductor light-emitting elements manufacture method of explanation the 4th execution mode of the present invention.
Figure 24 is the cross-sectional view of a step of the semiconductor light-emitting elements manufacture method of explanation the 4th execution mode of the present invention.
Figure 25 is the cross-sectional view of a step of semiconductor light-emitting elements manufacture method of the variation of explanation the 4th execution mode of the present invention.
Figure 26 is the cross-sectional view of a step of semiconductor light-emitting elements manufacture method of other variation of explanation the 4th execution mode of the present invention.
Description of reference numerals
1,5,12,20,33 metal levels (Au layer)
2,4,18 metal buffer layers
3p type GaAs layer
6n type GaAs layer
7 window layers
8n type coating layer
9 Multiple Quantum Well (MQW) layer
10p type coating layer
11 metal contact layers (AuBe-Ni alloy)
15,23GaAs substrate
17 insulating barriers
21 silicon (Si) layer
22,27 titaniums (Ti) layer
The 24AlInGaP layer
25n type GaAs layer
26 epitaxially grown layers
29 surface electrode layers
30 roughened zones
31 trapping layers
32,34 metal buffer layers (AuGe-Ni alloy)
28,35 backplate layers
40 air gaps
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.In the following record, use identical or similar Reference numeral for identical or similar part about accompanying drawing.Wherein, it should be noted: accompanying drawing is schematically, there are differences between itself and the real object.In addition, the part that also exists size relationship or ratio to differ from one another certainly between each accompanying drawing.
In addition, the execution mode of representing below is that in the embodiments of the present invention, the configuration of each component parts etc. is not limited to following configuration to the device that is used for technical conceive of the present invention is specialized or a kind of illustration of method.Embodiments of the present invention can add various changes in claims.
(first execution mode)
(component structure)
Shown in Fig. 4 (a), be applicable to that the semiconductor light-emitting elements of first execution mode of the present invention and the p type or the n type GaAs substrate of manufacture method thereof have: p type or n type GaAs layer (3,6) and metal level 1, metal level 1 are configured in the surface of the p type or the n type GaAs layer (3,6) of the striated groove that is formed with spacing L, width W.The width W of striated groove, for example about 10 μ m, about 30 μ m or about 60 μ m, spacing L is about for example about 100 μ m, 200 μ m, 410 μ m, 1000 μ m or 2000 μ m.In addition, groove is not limited to striated, also can be clathrate, point-like, whirlpool shape, hexagon-shaped pattern shape etc.In addition, the degree of depth of groove forms identical or more shallow than the width W of striped with the width W of striped.
Fig. 4 (b) expression utilizes the wafer joining technique GaAs substrate shown in LED and Fig. 4 (a) to be fitted each other and the schematic cross-section structure of the semiconductor light-emitting elements that forms.LED one side has for example been expressed the p type coating layer 10 that is formed by epitaxial growth and has been formed at metal level 12 on the p type coating layer 10, and other active layer etc. omit diagram.Use is at the metal 1 of the surface configuration of GaAs layer (3,6), with LED and GaAs substrate attaching, has air gap 40 simultaneously between the metal 1 of groove and metal level 12.
That is, when utilizing the wafer joining technique that LED is fitted in the GaAs substrate,, can form the air discharge channel, and then can relax when heat because the stress that thermal expansion produces by forming such groove at the GaAs substrate surface.Consequently can prevent peeling off of each interlayer that the difference of the coefficient of expansion of Semiconductor substrate, dielectric film, metal level causes.
Schematic cross section structure chart after Fig. 4 (c) and then the expression chipization.The air gap 40 that forms in the groove of the striated on the surface that is formed at p type or n type GaAs substrate is included in the chip of finishing.When spacing L too, also exist air gap 40 not to be included in the interior situation of chip.
As the conductivity type of the GaAs substrate of semiconductor light-emitting elements that is applicable to first execution mode and manufacture method thereof, p type or n type can both be suitable for.Fig. 5 represents the schematic cross section structure of the p type GaAs substrate of the semiconductor light-emitting elements of first execution mode of the present invention and manufacture method thereof, and Fig. 6 represents the schematic cross section structure of n type GaAs substrate.In addition, Fig. 7 represents to be applicable to the schematic cross section structure of the LED of the semiconductor light-emitting elements of first execution mode of the present invention and manufacture method thereof.
Fig. 8 represents to relate to and utilizes the wafer joining technique LED shown in Figure 7 and Fig. 5 and p type shown in Figure 6 or n type GaAs substrate to be fitted each other and the schematic cross section structure of the semiconductor light-emitting elements of first execution mode that forms.
As shown in Figure 5, be applicable to the semiconductor light-emitting elements of first execution mode and the p type GaAs substrate of manufacture method thereof, have: the surface is formed with the n type GaAs layer 3 of a plurality of grooves, on the surface of p type GaAs layer 3, the metal buffer layer 2 of the bottom surface configuration of the sidewall of groove and groove, be disposed at metal level 1 on the metal buffer layer 2, be disposed at the back side of p type GaAs layer 3 metal buffer layer 4, be disposed at metal buffer layer 4 and lip-deep metal levels 5 p type GaAs layer 3 a relative side.
As shown in Figure 6, be applicable to the semiconductor light-emitting elements of first execution mode and the n type GaAs substrate of manufacture method thereof, have: the surface is formed with the n type GaAs layer 6 of a plurality of grooves, on the surface of n type GaAs layer 6, the metal buffer layer 2 of the bottom surface configuration of the sidewall of groove and groove, be disposed at metal level 1 on the metal buffer layer 2, be disposed at the back side of n type GaAs layer 6 metal buffer layer 4, be disposed at metal buffer layer 4 and lip-deep metal levels 5 n type GaAs layer 6 a relative side.
In the structure of Fig. 5, metal level 1,5 all is to be formed by the Au layer, and metal buffer layer 2,4 for example can be formed by the AuBe layer owing to contact with p type GaAs layer 3.In addition, in the structure of Fig. 6, metal level 1,5 all is to be formed by the Au layer, and metal buffer layer 2,4 for example can be formed by the AuGe layer owing to contact with n type GaAs layer 6.
As shown in Figure 7, be applicable to the schematic cross section structure of the LED of the semiconductor light-emitting elements of first execution mode of the present invention and manufacture method thereof, have: metal level 12, be disposed at metal contact layer 11 on the metal level 12, be disposed at p type coating layer 10 on the metal contact layer 11, be disposed at p type coating layer 10 mqw layer 9, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.
In the structure of Fig. 7, metal level 12 is for example formed by the Au layer.In addition, metal contact layer 11 is for example formed by alloy-layer of AuBe layer or AuBe and Ni etc.P type coating layer 10 is that the AlGaAs layer of p-type and the sandwich construction of the AlGaAs layer that conductivity type is the p+ type form by AlGaAs layer or conductivity type for example, and thickness is about about 0.1 μ m.For example by about 100 pairs of heterojunction that are made of the GaAs/GaAlAs layer are constituted the MQW structure of carrying out lamination and forming, thickness for example is about about 1.6 μ m mqw layer 9.N type coating layer 8 is for example formed by n type AlGaAs layer, and thickness for example is about about 0.1 μ m.Window layer 7 for example is made of the sandwich construction of AlGaAs layer and the GaAs layer that forms on the sandwich construction of this AlGaAs layer, and whole thickness is about about 0.95 μ m.
As shown in Figure 8, the semiconductor light-emitting elements of first execution mode utilizes the wafer joining technique that LED structure shown in Figure 7 and Fig. 5 and p type shown in Figure 6 and even n type GaAs substrate are fitted each other and forms.
Promptly, as shown in Figure 8, the semiconductor light-emitting elements of first execution mode, constitute by p (n) type GaAs substrat structure and LED structure, p (n) type GaAs substrat structure has: the surface is formed with p (n) the type GaAs layer 3 (6) of a plurality of grooves, surface at p (n) type GaAs layer 3 (6), the metal buffer layer 2 of the sidewall of groove and the configuration of the bottom surface of groove, be disposed at the metal level 1 on the metal buffer layer 2, be disposed at the metal buffer layer 4 at the back side of p (n) type GaAs layer 3 (6), be disposed at metal buffer layer 4 and lip-deep metal levels 5 p (n) type GaAs layer 3 (a 6) relative side; The LED structural arrangements is on this p (n) type GaAs substrate, it has: metal level 12, be disposed at the metal contact layer 11 on the metal level 12, be disposed at the p type coating layer 10 on the metal contact layer 11, be disposed at the mqw layer 9 on the p type coating layer 10, be disposed at the n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.
Use is disposed at the metal level 1 and the metal level 12 on the surface of p (n) type GaAs layer 3 (6), to fit by LED structure and p (n) type GaAs substrat structure that epitaxially grown layer constitutes, simultaneously between the first metal layer of groove and metal level 12, there is air gap 40, thus, can keep being disposed at the lip-deep metal level 1 of p (n) type GaAs layer 3 (6) and good the combining closely property between the metal level 12, not need barrier metal and can form reflectivity good metal reflector.Therefore, also just there is not the problem of the Sn diffusion that comes from the Au-Sn alloy-layer.
Metallic reflector is formed by pre-configured metal level 12 in LED structure one side.Because the interface by p type coating layer 10 and metal level 12 forms minute surface, thereby can be reflected on this interface from the radiating light of LED.Metal contact layer 11 is the layers that are used to obtain the ohmic contact between metal level 12 and the p type coating layer, and it is present in the interface between metal level 12 and the p type coating layer 10, thereby forms the part of minute surface.
As shown in Figure 8, the semiconductor light-emitting elements of first execution mode, by form metal level 1 and metal level 12 simultaneously by the Au layer, can utilize the metal level 12 of LED structure one side that the thermo-compressed technology will be made of epitaxially grown layer to fit with the metal level 1 of GaAs substrate one side.
The condition of fitting is that for example about 250 ℃～700 ℃, preferred 300 ℃～400 ℃, the pressure of thermo-compressed is, for example approximately about 10MPa～20MPa.By air gap 40 is set, compared to the structure that whole face is all combined closely, metal level 1 reduces with the contact area of metal level 12.By air gap 40 is set, the pressure of note thermo-compressed is pressurizeed with the contact area of metal level 12 to the metal level 1 that contact area reduces relatively, when metal level 1 and metal level 12 were carried out thermo-compressed, applying intensity increased.Therefore, in the time of LED structure that will constitute by epitaxially grown layer and p (n) type GaAs substrate attaching,, can keep being disposed at the lip-deep metal level 1 of p (n) GaAs layer 3 (6) and good the combining closely property between the metal level 12 owing to there is air gap 40.
Semiconductor light-emitting elements according to first execution mode, can keep the combining closely property between metal level 1 and the metal level 12, by using the metal level 12 that constitutes by Au, in the structure of LED one side, form light reflectivity good metal reflector simultaneously, therefore can pursue the high brightnessization of LED.
(second embodiment)
(component structure)
As shown in Figure 9, be applicable to the semiconductor light-emitting elements of second execution mode and the LED of manufacture method thereof, have: metal level 12, be disposed on the metal level 12 and patterned metal contact layer 11 and insulating barrier 17, be disposed at p type coating layer 10 on patterned metal contact layer 11 and the insulating barrier 17, be disposed at p type coating layer 10 mqw layer 9, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.
In the structure of Fig. 9, metal level 12 is for example formed by the Au layer, and thickness for example is about about 2.5～5 μ m.In addition, metal contact layer 11 is for example formed by alloy-layer of AuBe layer or AuBe and Ni etc., thickness for example with insulating barrier 17 equal extent, be approximately about 450nm.Insulating barrier 17 is for example by silicon oxide film, silicon nitride film, SiON film, SiO
xN
yThe formation such as multilayer film of film or these films.P type coating layer 10 is that the AlGaAs layer of p-type and the sandwich construction of the AlGaAs layer that conductivity type is the p+ type form by AlGaAs layer or conductivity type for example, and thickness is about about 0.1 μ m.For example by about 100 pairs of heterojunction that are made of the GaAs/GaAlAs layer are constituted the MQW structure of carrying out lamination, thickness for example is about about 1.6 μ m mqw layer 9.N type coating layer 8 is for example formed by n type AlGaAs layer, and thickness for example is about about 0.1 μ m.Window layer 7 for example is made of the sandwich construction of AlGaAs layer and the GaAs layer that forms on the sandwich construction of this AlGaAs layer, and whole thickness is about about 0.95 μ m.
(variation of second execution mode)
As shown in figure 10, be applicable to the semiconductor light-emitting elements of variation of second execution mode and the LED of manufacture method thereof, have: metal level 12, be disposed on the metal level 12 and patterned metal buffer layer 18, be disposed on the resilient coating 18 and patterned metal contact layer 11 and insulating barrier 17, be disposed at p type coating layer 10 on patterned metal contact layer 11 and the insulating barrier 17, be disposed at mqw layer 9 on the p type coating layer 10, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.
In the structure of Figure 10, metal buffer layer 18 is for example formed by Ag, Al, Ni, Cr or W layer.Because the metal level 12 that Au forms absorbs blue light, ultraviolet light, thereby in order to reflect the light of such short wavelength side, preferably has the metal buffer layer 18 that is made of Ag, Al etc.In the structure of Figure 10, the structure of each layer beyond the metal buffer layer 18 is identical with the structure of Fig. 9, thereby omits its explanation.
As shown in figure 11, the semiconductor light-emitting elements of second execution mode forms for utilizing the wafer joining technique that GaAs substrate 15 and Fig. 9 and LED structure shown in Figure 10 are fitted each other.
Figure 11 represents to utilize the wafer joining technique GaAs substrate 15 of p type or n type to be fitted each other with LED structure shown in Figure 10 and the schematic cross section structure of the semiconductor light-emitting elements of the variation of second execution mode that forms.In addition, in Figure 11, omitted on GaAs substrate 15 diagram of the metal level that for example constitutes by the Au layer of configuration.Perhaps, also may on GaAs substrate 15, not dispose metal levels such as Au layer in addition, can only utilize metal level 12 applying GaAs substrates 15 and LED structures.
Promptly, as shown in figure 11, the semiconductor light-emitting elements of the variation of second execution mode, constitute by GaAs substrate 15 and LED structure, the LED structural arrangements has metal level 12, is disposed at metal buffer layer 18 on the metal level 12, is disposed on the metal buffer layer 18 and patterned metal contact layer 11 and insulating barrier 17, is disposed at p type coating layer 10 on patterned metal contact layer 11 and the insulating barrier 17, is disposed at mqw layer 9 on the p type coating layer 10, is disposed at n type coating layer 8 on the mqw layer 9, is disposed at the window layer 7 on the n type coating layer 8 on GaAs substrate 15.
By using metal level 12, will fit by LED structure and GaAs substrate 15 that epitaxially grown layer constitutes, can form reflectivity good metal reflector.Metallic reflector is made of the metal level 12 that is pre-configured in LED structure one side.Owing to form minute surface by interface between insulating barrier 17 and metal level 12 or the metal buffer layer 18, thereby can be reflected at this minute surface from the radiating light of LED.Metal contact layer 11 is the layers that are used to realize the ohmic contact between metal level 12 or metal buffer layer 18 and the p type coating layer 10, and the interface that it is present between metal level 12 and the p type coating layer 10 has the thickness with insulating barrier 17 same degree.
When the composition width of metal contact layer 11 was wide, because the light-emitting zone of essence is limited, thereby area efficiency reduced and luminous efficiency reduces.On the other hand, when the composition width of metal contact layer 11 is narrow,, thereby there are only composition width and picture construction because the area resistance of metal contact layer 11 increases, the clockwise direction voltage Vf of LED rises.In several composition examples, exist based on the cellular picture construction of hexagon or with the some picture construction of circle with the basis.About these composition shapes, will in Figure 17 and Figure 18, describe in conjunction with the 4th execution mode.
Semiconductor light-emitting elements in second execution mode and the variation thereof, identical with first execution mode shown in Figure 8, all forms by the metal level 12 that makes the metal level that is disposed on the GaAs substrate and configuration LED one side, can utilize the metal level 12 of LED structure one side that the thermo-compressed technology will be made of epitaxially grown layer and metal level (diagram slightly) applying of GaAs substrate one side by the Au layer.
The condition of fitting for example is about 250 ℃～700 ℃, and preferred 300 ℃～400 ℃, the pressure of thermo-compressed for example is about about 10MPa～20MPa.
According to the semiconductor light-emitting elements in second execution mode and the variation thereof, by between semiconductor layers such as the metal level 12 that becomes metallic reflector or metal buffer layer 18 and p type coating layer 10, forming transparent insulating barrier 17, can avoid p type coating layer 10 semiconductor layers such as grade to contact with metal level 12, prevent the absorption of light, thereby form reflectivity good metal reflector.
For with transparent insulating layer 17 compositions and realize ohmic contact, the metal contact layer 11 that utilizes the lift-off technology evaporation to constitute by AuBe etc.
Thereafter, evaporation is used for the Au layer of applying GaAs substrate 15 on dielectric film 17, thereby forms metal level 12.
Semiconductor light-emitting elements according to second execution mode and variation thereof, by transparent insulating film 17 is present between metallic reflector and the semiconductor, can avoid contacting of p type coating layer 10 semiconductor layers such as grade and metal level 12, prevent the absorption of light, thereby form reflectivity good metal reflector, therefore can pursue the high brightnessization of LED.
In addition, semiconductor light-emitting elements according to second execution mode and variation thereof, by between dielectric film 17 and metal level 12, forming the metal buffer layer 18 that constitutes by Ag or Al etc., the Au low short-wavelength lights such as ultraviolet ray of reflective rate effectively can be utilized, thereby the high brightnessization of LED can be pursued.
In addition, according to the semiconductor light-emitting elements of second execution mode and variation thereof, owing to be not absorbed at the interface of p type coating layer and metallic reflector glazing, thereby can pursue the high brightnessization of LED.
(the 3rd execution mode)
(component structure)
As shown in figure 12, be applicable to that the semiconductor light-emitting elements of the 3rd execution mode and the p type or the n type GaAs substrat structure of manufacture method thereof have: the surface be formed with the GaAs substrate 15 of a plurality of grooves and on the surface of n type GaAs substrate 15, the metal level 20 of the bottom surface configuration of the sidewall of groove and groove.
In the structure of Figure 12, metal level 20 is for example formed by the Au layer.
As shown in figure 13, be applicable to the schematic cross section structure of the LED of the semiconductor light-emitting elements of the 3rd execution mode of the present invention and manufacture method thereof, have: metal level 12, be disposed at p type coating layer 10 on the metal level 12, be disposed at p type coating layer 10 mqw layer 9, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.
In the structure of Figure 13, metal level 12 is for example formed by the Au layer, and thickness for example is about about 1 μ m.In addition, p type coating layer 10 is that the AlGaAs layer of p-type and the sandwich construction of the AlGaAs layer that conductivity type is the p+ type form by AlGaAs layer or conductivity type for example, and integral thickness for example is about about 0.1 μ m.For example by about 80～100 pairs of heterojunction that are made of the GaAs/GaAlAs layer are constituted the MQW structure of carrying out lamination and forming, integral thickness for example is about about 1.6 μ m mqw layer 9.N type coating layer 8 is for example formed by n type AlGaAs layer, and thickness for example is about about 0.1 μ m.Window layer 7 for example is made of the sandwich construction of AlGaAs layer and the GaAs layer that forms on the sandwich construction of this AlGaAs layer, and whole thickness is about about 0.95 μ m.
As shown in figure 14, the semiconductor light-emitting elements of the 3rd execution mode utilizes the wafer joining technique LED structure shown in Figure 13 and p type shown in Figure 12 or n type GaAs substrate are fitted each other and to form.There is air gap 40 between the metal level 20 of groove and the metal level 12.
Promptly, as shown in figure 14, the semiconductor light-emitting elements of the 3rd execution mode, be made of GaAs substrat structure and LED structure, the GaAs substrat structure has: the surface is formed with the GaAs substrate 15 of a plurality of grooves, on the surface of GaAs substrate 15, the metal level 20 of the bottom surface configuration of the sidewall of groove and groove; The LED structural arrangements is on this GaAs substrat structure, and it has: metal level 12, be disposed at p type coating layer 10 on the metal level 12, be disposed at mqw layer 9 on the p type coating layer 10, be disposed at n type coating layer 8 on the mqw layer 9, be disposed at the window layer 7 on the n type coating layer 8.The air gap 40 that forms in the groove of the striated on the surface that is formed at GaAs substrate 15 is included in the chip of making.When the spacing of groove is big, the situation in the chip that also exists air gap 40 not to be included in to make.
Metallic reflector is formed by pre-configured metal level 12 in LED structure one side.Owing to form minute surface by the interface between p type coating layer 10 and the metal level 12, thereby can be reflected at this minute surface from the radiating light of LED.
As shown in figure 14, in the semiconductor light-emitting elements of the 3rd execution mode, metal level 20 and metal level 12 are all formed by the Au layer, can utilize the metal level 12 of LED structure one side that the thermo-compressed technology will be made of epitaxially grown layer to fit with the metal level 20 of GaAs substrate one side thus.Owing between the metal level 20 of groove and metal level 12, have air gap 40, thereby can keep being disposed at the lip-deep metal level 20 of GaAs substrate 15 and good the combining closely property between the metal level 12, thereby do not need barrier metal and can form reflectivity good metal reflector.
The condition of fitting for example is about 250 ℃～700 ℃, and preferred 300 ℃～400 ℃, the pressure of thermo-compressed for example is about about 10MPa～20MPa.By air gap 40 is set, than the structure that whole face is combined closely, metal level 20 reduces with the contact area of metal level 12.By air gap 40 is set, consequently, the pressure of note thermo-compressed is applied on the contact area of relative metal level that reduces 20 of contact area and metal level 12, when metal level 20 and metal level 12 carried out thermo-compressed, applying intensity increased.Therefore, when LED structure that will be made of epitaxially grown layer and GaAs substrat structure are fitted, owing to have air gap 40, thereby can keep being disposed at the lip-deep metal level 20 of GaAs substrate 15 and good the combining closely property between the metal level 12.
According to the semiconductor light-emitting elements and the manufacture method thereof of the 3rd execution mode,, use metal to make light total reflection as the reflector, thereby can prevent to be absorbed to the light of GaAs substrate incident in order to prevent to be absorbed to the light of GaAs substrate incident.As the material of fitting, use opaque semiconductor substrate materials such as GaAs, Si with Semiconductor substrate.
Use the metal level 20 of Au layer as GaAs substrate 15 1 sides, also use the Au layer as metal level 12 with LED one side of epitaxially grown layer, metal level 20 is combined with metal level 12, thereby the metal level 12 that will be used for combination form the reflection of light layer as metallic reflector.
Semiconductor light-emitting elements and manufacture method thereof according to the 3rd execution mode, in order to prevent to be absorbed to the light of GaAs substrate incident, use metal to make light total reflection as the reflector, thereby can prevent to be absorbed to the light of GaAs substrate incident, can reflect the light of any angle, therefore can pursue the high brightnessization of LED.
(the 4th execution mode)
(component structure)
As shown in figure 15, be applicable to the semiconductor light-emitting elements of the 4th execution mode and the silicon substrate structure of manufacture method thereof, have: the surface is formed with the silicon substrate 21 of a plurality of grooves, on the surface of silicon substrate 21, titanium (Ti) layer 22 of the bottom surface configuration of the sidewall of groove and groove and on the surface of titanium (Ti) layer 22, the metal level 20 of the bottom surface configuration of the sidewall of groove and groove.
In the structure of Figure 15, the thickness of silicon substrate 21 for example is about about 130 μ m, and metal level 20 is for example formed by the Au layer, and thickness is about about 2.5 μ m.
As shown in figure 16, be applicable to that the semiconductor light-emitting elements of the 4th execution mode of the present invention and the LED of manufacture method thereof have: GaAs substrate 23, be disposed at AlInGaP layer 24 on the GaAs substrate 23, be disposed at n type GaAs layer 25 on the AlInGaP layer 24, be disposed at epitaxially grown layer 26 on the n type GaAs layer 25, be disposed on the epitaxially grown layer 26 and patterned metal contact layer 11 and insulating barrier 17, be disposed at the metal level 12 on patterned metal contact layer 11 and the insulating barrier 17.
In the structure of Figure 16, the thickness of GaAs substrate 23 for example is about about 300 μ m; The thickness of AlInGaP layer 24 for example is about about 350nm; N type GaAs layer 25 plays a role as the contact layer between GaAs substrate 23 and the epitaxially grown layer 26 via AlInGaP layer 24, and its thickness for example is about about 500nm; Epitaxially grown layer 26 has the n type window layer that is made of the AlGaAs layer and n type coating layer, the n type coating layer that is made of to the mqw layer that constitutes with by the AlGaAs layer the heterojunction of a plurality of GaAs/AlGaAs and the p type window layer that is made of AlGaAs layer/GaP layer.Mqw layer for example is made of the MQW structure that about 100 pairs of heterojunction that are made of the GaAs/GaAlAs layer are formed carrying out lamination, and its thickness for example is approximately about 1.6 μ m.
In addition, metal contact layer 11 is for example formed by alloy-layer of AuBe layer or AuBe and Ni etc., thickness for example with insulating barrier 17 equal extent, be about about 450nm.
As Figure 19～shown in Figure 24, the semiconductor light-emitting elements of the 4th execution mode utilizes the wafer joining technique LED structure shown in Figure 16 and silicon substrate shown in Figure 15 are fitted mutually and to form.There is air gap 40 between the metal level 20 of groove and the metal level 12.
Promptly, as shown in figure 24, the semiconductor light-emitting elements of the 4th execution mode has silicon substrate structure and LED structure, silicon substrate structure has: the surface is formed with the silicon substrate 21 of a plurality of grooves, on the surface of silicon substrate 21, titanium (Ti) layer 22 of the bottom surface configuration of the sidewall of groove and groove and on the surface of titanium (Ti) layer 22, the metal level 20 of the bottom surface configuration of the sidewall of groove and groove; The LED structure has: be disposed at the metal level 12 on the metal level 20, be disposed on the metal level 12 and patterned metal contact layer 11 and insulating barrier 17, be disposed on patterned metal contact layer 11 and the insulating barrier 17 and have the epitaxially grown layer 26 of roughened zone 30 (the n type GaAs layer 25 that will expose carries out roughened and the zone that forms) on the surface of exposing, be disposed on the epitaxially grown layer 26 and patterned n type GaAs layer 25 and being disposed on the n type GaAs layer 25 and same patterned surface electrode layer 29.The air gap 40 that forms in the groove of the lip-deep striated that is formed at silicon substrate 21 is included in the chip of making.When the spacing of groove is big, the situation in the chip that also exists air gap 40 not to be included in to make.
In addition, in silicon substrate structure, dispose titanium layer 27 and backplate layer 28 at the back side of silicon substrate 21.
In addition, shown in Figure 26 as described later between epitaxially grown layer 26 and n type GaAs layer 25, can also dispose the trapping layer 31 that is used to prevent current concentration.Material as in this case trapping layer 31 can use GaAs, and its thickness for example is about about 500nm.
As shown in figure 24, in the semiconductor light-emitting elements of the 4th execution mode, will fit by LED structure and silicon substrate structure that epitaxially grown layer constitutes, and can form reflectivity good metal reflector by using metal level 12.Metallic reflector is formed by the metal level 12 that is pre-configured in LED structure one side.Owing to form minute surface by the interface between insulating barrier 17 and the metal level 12, thereby can on this minute surface, be reflected from the radiating light of LED.Metal contact layer 11 is the layers that are used to realize the ohmic contact between metal level 12 and the epitaxially grown layer 26, and the interface that it is present between metal level 12 and the epitaxially grown layer 26 has the thickness with insulating barrier 17 same degree.
As Figure 19～shown in Figure 24, in the semiconductor light-emitting elements of the 4th execution mode, because metal level 20 and metal level 12 are all formed by the Au layer, can utilize the metal level 12 of LED structure one side that the thermo-compressed technology will be made of epitaxially grown layer and metal level 20 applyings of silicon substrate 21 1 sides.Owing between the metal level 20 of groove and metal level 12, have air gap 40, thereby can keep being disposed at the lip-deep metal level 20 of silicon substrate 21 and good the combining closely property between the metal level 12, thereby do not need barrier metal and can form reflectivity good metal reflector.
The condition of fitting for example is about 250 ℃～700 ℃, and preferred 300 ℃～400 ℃, the pressure of thermo-compressed for example is about about 10MPa～20MPa.By air gap 40 is set,, the metal level 20 and the contact area of metal level 12 are reduced than the structure that whole face is combined closely.By air gap 40 is set, the pressure of note thermo-compressed is become to the contact area pressurization of the relative metal level that reduces 20 of contact area with metal level 12, when metal level 20 and metal level 12 carry out thermo-compressed, the increase of applying intensity.Therefore, when LED structure that will be made of epitaxially grown layer and silicon substrate are fitted,, can keep being disposed at the lip-deep metal level 20 of silicon substrate 21 and good the combining closely property between the metal level 12 owing to there is air gap 40.
(plane composition structure)
When the composition width of metal contact layer 11 was very wide, because the light-emitting zone of essence is limited, thereby area efficiency reduced and luminous efficiency reduces.On the other hand, when the composition width of metal contact layer 11 is narrow, because the area resistance of metal contact layer 11 increases, the forward voltage Vf of LED rises.Therefore, there are only composition width W and composition space D 1.In several composition examples, exist based on the cellular picture construction of hexagon or with the round dot picture construction of round dot with the basis.
As shown in figure 17, be applicable to the schematic plan picture construction of the LED of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof, existing with the hexagon is the cellular composition of foundation structure.In Figure 17, the shape of representing with wide W is partly represented the composition of metal contact layer 11 among Figure 16, that for example formed by the alloy-layer of AuBe layer or AuBe and Ni etc., and the hexagon composition with width D 1 is equivalent to the part of insulating barrier 17, expression to carry out the zone of leaded light from the radiating light of LED.Wide D1 for example is about about 100 μ m, and line width W is about about 5 μ m～about 11 μ m.
As shown in figure 18, be applicable to other schematic plan picture constructions of the LED of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof, have point-like composition based on circle.In Figure 18, the shape of representing with width d is partly represented the composition of metal contact layer 11 among Figure 16, that for example formed by the alloy-layer of AuBe layer or AuBe and Ni etc., is the configuration of D2 composition spacing with the amplitude.In Figure 18, width is that d, composition spacing are the part that zone beyond the circular composition part of D2 is equivalent to insulating barrier 17, and expression is to carrying out the zone of leaded light from the radiating light of LED.Composition interval D 2 for example is about about 100 μ m, and width d is about about 5 μ m～about 11 μ m.
In addition, be applicable to the schematic plan picture construction of the LED of the semiconductor light-emitting elements of the 4th execution mode of the present invention and manufacture method thereof, be not limited to the cellular composition of hexagon, round point shape composition, and can be suitable for random arrangement such as triangle composition, rectangle composition, hexagon composition, octangle composition, circular point-like composition with mechanism map.
Be applicable to the schematic plan picture construction of LED of the semiconductor light-emitting elements of the 4th execution mode, do not reduce luminosity as long as the width of metal wiring composition is defined as guaranteeing the area in leaded light zone, and the degree that also can guarantee to make the forward voltage Vf of LED not rise gets final product from LED.
(manufacture method)
The following describes the manufacture method of the semiconductor light-emitting elements that relates to the 4th execution mode.
Figure 15～Figure 16 and Figure 19～Figure 24 represent to illustrate the schematic cross section structure of a step of manufacture method of the semiconductor light-emitting elements of the 4th execution mode.
(a) at first, as shown in figure 15, prepare the silicon substrate structure of applying usefulness, and prepare the LED structure of applying usefulness as shown in figure 16.
In silicon substrate structure, use sputtering method, vacuum vapour deposition etc. on the surface is formed with the bottom surface of the sidewall of surface, groove of the silicon substrate 21 of a plurality of grooves and groove, to form titanium (Ti) layer 22 successively, on the bottom surface of the sidewall of the surface of titanium (Ti) layer 22, groove and groove, form the metal level 20 that constitutes by Au etc.
In the LED structure, use molecular beam epitaxial growth method (MBE:Molecular Beam Epitaxy), MOCVD (Metal Organic Chemical Vapor Deposition) method etc. to form AlInGaP layer 24, n type GaAs layer 25, the epitaxially grown layer 26 on the GaAs substrate 23 successively.Then, use and peel off method on epitaxially grown layer 26, patterned relatively insulating barrier 17 forms metal contact layer 11 and metal level 12.
(b) then, as shown in figure 19, applying shown in Figure 15 is fit together with the LED structure with silicon substrate structure and applying shown in Figure 16.In the applying step, for example, about about about 340 ℃ of thermo-compressed temperature, the about 18MPa of thermo-compressed pressure, the thermo-compressed time is about under the condition about 10 minutes, uses press to implement to fit.
(c) then, as shown in figure 20, for the back side of silicon substrate 21, the backplate layer 28 that utilizes sputtering method, vacuum vapour deposition etc. to form titanium layer 27 successively and constitute by Au.When not making titanium layer 27 between Au layer and silicon substrate 21, if implement sintering in order to realize ohmic contact, then silicon substrate 21 can become the AuSi silicide with the Au at the junction surface of Au layer, causes reflectivity to reduce.Therefore, titanium layer 27 has as the effect that is used for the silicon substrate 21 and the combination that combines of the Au layer of backplate layer 28 are used metal.For preventing that the Au layer from generating the AuSi silicide, need tungsten (W) to be used as barrier metal, the structure as this moment need form metal level by silicon substrate/Ti/W/Au from substrate one side.
(d) then, as shown in figure 21, utilize protection such as resist backplate layer 28 after, remove GaAs substrate 23 by etching.The etching solution that for example uses ammoniacal liquor/peroxidating water to constitute, about about 65～85 minutes of etching period.Here, AlInGaP layer 24 plays a significant role as etching stopping layer.
(e) then, as shown in figure 22, use the etching solution of hydrochloric acid system, remove AlInGaP layer 24.Etching period for example about 1 minute about half.
(f) then, as shown in figure 23, utilize sputtering method, vacuum vapour deposition etc. to form surface electrode layers 29 after, carry out composition.Make the pattern of the pattern of surface electrode layer 29 and metal contact layer 11 unanimous on the whole.As the material of surface electrode layer 29, can use for example laminated structure of Au/AuGe-Ni alloy/Au formation.Here, n type GaAs layer 25 has the function that prevents that surface electrode layer 29 from peeling off.
(g) then, as shown in figure 24, implement roughened, remove the n type GaAs layer 25 beyond the n type GaAs layer 25 under the surface electrode layer 29.As the condition of roughened, for example can under being about condition about 5sec～15sec, about 30 ℃～50 ℃, time use the etching solution of nitric acid-sulfuric acid system to carry out etching.In addition,, can use the thin solution etching n type GaAs layer 25 of hydrofluoric acid, thereby remove the GaO that is formed at the surface as the pre-treatment of roughened
2Film.For example about about 3 minutes of etching period.
In addition, as the substitute of titanium layer 22 and titanium layer 27, can use for example tungsten (W) barrier metal, platinum (Pt) barrier metal etc.
According to above explanation, as shown in figure 24, complete and use semiconductor light-emitting elements silicon substrate 21, the 4th execution mode of the present invention.
(variation of the 4th execution mode)
Figure 25 represents to illustrate the schematic cross section structure of a step of manufacture method of the semiconductor light-emitting elements of the 4th execution mode variation.In addition, Figure 26 represents to illustrate the schematic cross section structure of a step of manufacture method of the semiconductor light-emitting elements of the 4th other variation of execution mode.
As shown in figure 25, the semiconductor light-emitting elements of the variation of the 4th execution mode utilizes the wafer joining technique that LED structure shown in Figure 16 is fitted each other with the GaAs substrate of Figure 15 same structure and formed with having.There is air gap 40 between the metal level 33 of groove and the metal level 12.
Promptly, as shown in figure 25, the semiconductor light-emitting elements of the variation of the 4th execution mode, have GaAs substrat structure and LED structure, the GaAs substrat structure has: the surface is formed with the GaAs substrate 15 of a plurality of grooves, on the surface of GaAs substrate 15, the metal buffer layer (AuGe-Ni alloy-layer) 32 of the bottom surface configuration of the sidewall of groove and groove and on the surface of metal buffer layer 32, the metal level (Au layer) 33 of the bottom surface configuration of the sidewall of groove and groove; The LED structure has: be disposed at the metal level 12 on the metal level 33, be disposed on the metal level 12 and patterned metal contact layer 11 and insulating barrier 17, be disposed on patterned metal contact layer 11 and the insulating barrier 17 and have the epitaxially grown layer 26 of roughened zone 30 (the n type GaAs layer 25 that will expose carries out roughened and the zone that forms) on the surface of exposing, be disposed on the epitaxially grown layer 26 and patterned n type GaAs layer 25 and being disposed on the n type GaAs layer 25 and same patterned surface electrode layer 29.The air gap 40 that forms in the groove of the lip-deep striated that is formed at GaAs substrate 15 is included in the chip of making.When the spacing of groove is big, the situation in the chip that also exists air gap 40 not to be included in to make.
In addition, in the GaAs substrat structure, dispose metal buffer layer (AuGe-Ni alloy-layer) 34 and backplate layer 35 at the back side of GaAs substrate 15.
In addition, as shown in figure 26, between epitaxially grown layer 26 and n type GaAs layer 25, can also dispose the trapping layer 31 that is used to prevent current concentration.Material as in this case trapping layer can be suitable for GaAs, and its thickness for example is about about 500nm.
As shown in figure 25, in the semiconductor light-emitting elements of the variation of the 4th execution mode, LED structure and the applying of GaAs substrat structure by using metal level 12 to be made of epitaxially grown layer can form reflectivity good metal reflector.Metallic reflector is formed by the metal level 12 that is pre-configured in LED structure one side.Owing to form minute surface by the interface between insulating barrier 17 and the metal level 12, thereby can on this minute surface, be reflected from the radiating light of LED.Metal contact layer 11 is the layers that are used to realize the ohmic contact between metal level 12 and the epitaxially grown layer 26, and the interface that it is present in metal level 12 and epitaxially grown layer 26 has the thickness with insulating barrier 17 same degree.
As Figure 25 and shown in Figure 26, in the variation of the 4th execution mode and the semiconductor light-emitting elements of other variation, therefore metal level 33 and metal level 12 are all formed by the Au layer, can utilize the metal level 12 of LED structure one side that the thermo-compressed technology will be made of epitaxially grown layer to fit with the metal level 33 of GaAs substrate 15 1 sides.Owing between the metal level 33 of groove and metal level 12, have air gap 40, thereby can keep being disposed at the lip-deep metal level 33 of GaAs substrate 15 and good the combining closely property between the metal level 12, thereby do not need barrier metal and can form reflectivity good metal reflector.
The condition of fitting is for example about 250 ℃～700 ℃, and preferred 300 ℃～400 ℃, the pressure of thermo-compressed is for for example approximately about 10MPa～20MPa.By air gap 40 is set,, the contact area between metal level 33 and the metal level 12 is reduced than the structure that complete whole face is all combined closely.By air gap 40 is set, the pressure of note thermo-compressed is pressurizeed with the contact area of metal level 12 to the metal level 33 that contact area reduces relatively, when metal level 33 and metal level 12 carried out thermo-compressed, applying intensity increased.Therefore, when LED structure that will be made of epitaxially grown layer and GaAs substrat structure are fitted,, can keep being disposed at the lip-deep metal level 33 of GaAs substrate 15 and good the combining closely property between the metal level 12 owing to there is air gap 40.
In the structure of Figure 25 and Figure 26, the metal buffer layer 34 that is formed at the back side of GaAs substrate 15 is for example formed by the AuGe-Ni alloy-layer, and thickness for example is about about 100nm.In addition, backplate layer 35 is formed by the Au layer, and thickness is about about 500nm.Be formed at the metal buffer layer 32 at the back side of GaAs substrate 15, for example formed by the AuGe-Ni alloy-layer, thickness for example is about about 100nm.And metal level 33 is formed by the Au layer, and thickness is about about 1 μ m.
Each step of the manufacture method of the semiconductor light-emitting elements of the 4th execution mode of Figure 15～Figure 16 and Figure 19～shown in Figure 24 is identical with the manufacture method of the semiconductor light-emitting elements of the 4th execution mode variation, thereby omits its explanation.
Be applicable to the schematic plan picture construction of the LED of the semiconductor light-emitting elements of the 4th execution mode variation of the present invention and manufacture method thereof, also can be suitable for and Figure 17 or Figure 18 identical construction.
In addition, illustrated to form the metal buffer layer 18 (with reference to Figure 10) that is made of Ag or Al etc. in the semiconductor light-emitting elements of the variation of second execution mode between dielectric film 17 and metal level 12, this point is effective too in the semiconductor light-emitting elements of the 4th execution mode and variation thereof.Because, can utilize the Au low short-wavelength lights such as ultraviolet ray of reflective rate effectively by forming the metal buffer layer 18 that constitutes by Ag or Al etc.
Semiconductor light-emitting elements and manufacture method thereof according to the 4th execution mode and variation thereof, by transparent insulating film 17 is present between metal level and the semiconductor layer, can avoid epitaxially grown layer 26 to contact with metal level 12, prevent the absorption of light, thereby form reflectivity good metal reflector, therefore can pursue the high brightnessization of LED.
In addition, semiconductor light-emitting elements and manufacture method thereof according to the 4th execution mode and variation thereof, by between dielectric film 17 and metal level 12,20, forming the metal buffer layer that constitutes by Ag or Al etc., the Au short wavelengths' such as ultraviolet ray that the reflective rate is low effectively light can be utilized, thereby the high brightnessization of LED can be pursued.
In addition, semiconductor light-emitting elements and manufacture method thereof according to the 4th execution mode and variation thereof, owing to avoid epitaxially grown layer 26 to contact with metal level 12, light can not be absorbed on the interface of epitaxially grown layer 26 and metallic reflector, thereby can pursue the high brightnessization of LED.
Semiconductor light-emitting elements and manufacture method thereof according to the 4th execution mode and variation thereof, in order to prevent to be absorbed to the light of silicon substrate or the incident of GaAs substrate, use metal to make light generation total reflection in the reflector, thereby prevent to be absorbed to the light of silicon substrate or the incident of GaAs substrate, can reflect the light of any angle, therefore can pursue the high brightnessization of LED.
(other execution mode)
As mentioned above, put down in writing the present invention by first～the 4th execution mode, the argumentation and the accompanying drawing that constitute this disclosed part should not be understood that to limit content of the present invention.By the disclosure, those skilled in the art can clearly understand various alternate embodiments, embodiment and application technology.
In the semiconductor light-emitting elements and manufacture method thereof of first to fourth execution mode of the present invention, as Semiconductor substrate, be that example is illustrated mainly, but also can make full use of GaN epitaxial substrate on Ge, SiGe, SiC, GaN substrate or the SiC etc. with silicon substrate, GaAs substrate.
Semiconductor light-emitting elements as the present invention first～the 4th execution mode, mainly be that example is illustrated with LED, but also can constitute laser diode (LD:Laser Diode), in this case, also can constitute distributed feed-back type (DFB:Distributed Feedback) LD, distributed Blatt reflective type (DBR) LD, the luminous LD of face etc.
So, the present invention includes the various execution modes that do not have record here.
Industrial applicibility
About semiconductor light-emitting elements of the present invention, can generally utilize the semiconductor element such as LED element, LD element of opaque substrates such as having GaAs substrate, Si substrate.
Claims (20)
1. a semiconductor light-emitting elements is characterized in that,
Constitute by GaAs substrat structure and light emitting diode construction,
Described GaAs substrat structure has:
The surface be formed with a plurality of grooves the GaAs layer,
Be configured in the bottom surface of the sidewall of the described surface of described GaAs layer, described groove and described groove the first metal buffer layer,
Be disposed at the first metal layer on the described first metal buffer layer,
Be disposed at the back side of described GaAs layer the second metal buffer layer,
Be disposed at the 3rd metal level on the opposite side surface with described GaAs layer of the described second metal buffer layer;
Described light emitting diode construction is disposed on the described GaAs substrat structure, and it has:
Second metal level,
Be disposed at metal contact layer on described second metal level,
Be disposed at p type covering on the described metal contact layer,
Be disposed at described p type covering multiple quantum well layer,
Be disposed at n type covering on the described multiple quantum well layer,
Be disposed at the window layer on the described n type covering;
Use is configured in the described the first metal layer and described second metal level on the described surface of described GaAs layer, described light emitting diode construction and described GaAs substrat structure is bonding, and between the described the first metal layer of described slot part and described the 3rd metal level, have air gap.
2. semiconductor light-emitting elements according to claim 1 is characterized in that,
The conductivity type of described GaAs layer is the p type.
3. semiconductor light-emitting elements according to claim 1 is characterized in that,
The conductivity type of described GaAs layer is the n type.
4. according to each described semiconductor light-emitting elements in the claim 1～3, it is characterized in that,
Utilization is pre-configured in described second metal level of described light emitting diode construction side, forms metallic reflector.
5. semiconductor light-emitting elements according to claim 1 is characterized in that,
Bonding by utilizing the thermo-compressed technology will be configured in the described the first metal layer and described second metal level on described surface of described GaAs layer, make described light emitting diode construction and described GaAs substrat structure bonding.
6. a semiconductor light-emitting elements is characterized in that,
The GaAs substrate and the light emitting diode construction that are formed with a plurality of grooves by the surface constitute,
Wherein, described light emitting diode construction has:
Be configured in second metal level of the bottom surface of the sidewall of the described surface of described GaAs substrate, described groove and described groove,
Be disposed on described lip-deep described second metal level of described GaAs substrate and patterned metal contact layer and insulating barrier,
Be disposed at patterned described metal contact layer and the p type covering (10) on the described insulating barrier,
Be disposed at multiple quantum well layer on the described p type covering,
Be disposed at n type covering on the described multiple quantum well layer,
Be disposed at the window layer on the described n type covering;
Described second metal level that use is disposed on the described surface of described GaAs substrate, described light emitting diode construction and described GaAs substrate is bonding, and between described second metal level of described groove and described light emitting diode construction, have air gap.
7. semiconductor light-emitting elements according to claim 6 is characterized in that,
Also have the 3rd metal buffer layer, it is configured on described second metal level, between described second metal level and patterned described metal contact layer and described insulating barrier.
8. according to claim 6 or 7 described semiconductor light-emitting elements, it is characterized in that,
By utilizing the thermo-compressed technology that described lip-deep described second metal level and the described GaAs substrate of described GaAs substrate is bonding, that described light emitting diode construction and described GaAs substrat structure is bonding.
9. a semiconductor light-emitting elements is characterized in that,
Constitute by GaAs substrat structure and light emitting diode construction,
Described GaAs substrat structure has:
The surface be formed with a plurality of grooves the GaAs substrate,
Be configured in the first metal layer on the bottom surface of the sidewall of the described surface of described GaAs substrate, described groove and described groove;
Described light emitting diode construction is disposed on the described GaAs substrat structure, and it has:
Second metal level,
Be disposed at p type covering on described second metal level,
Be disposed at multiple quantum well layer on the described p type covering,
Be disposed at n type covering on the described multiple quantum well layer,
Be disposed at the window layer on the described n type covering;
Use the described lip-deep described the first metal layer and described second metal level of described GaAs substrate, described light emitting diode construction and described GaAs substrate is bonding, and, between the described the first metal layer of described groove and described light emitting diode construction, have air gap.
10. semiconductor light-emitting elements according to claim 9 is characterized in that,
By utilizing the thermo-compressed technology that the described lip-deep described the first metal layer and described second metal level of described GaAs substrate is bonding, make described light emitting diode construction and described GaAs substrat structure bonding thus.
11. a semiconductor light-emitting elements is characterized in that,
Have silicon substrate structure and LED structure,
Described silicon substrate structure is formed with the titanium layer on the bottom surface of the silicon substrate of a plurality of grooves, the sidewall that is configured in the described surface of described silicon substrate, described groove and described groove by the surface, the first metal layer that is disposed on the titanium layer constitutes;
Described LED structure by be disposed at second metal level on the described the first metal layer, be disposed on described second metal level and patterned metal contact layer and insulating barrier, be disposed on patterned metal contact layer and the insulating barrier and have on the surface of exposing roughened area epitaxially grown layer, be disposed on the epitaxially grown layer and patterned n type GaAs layer, be disposed at described n type GaAs layer and patterned surface electrode layer constitutes;
Use the described lip-deep described the first metal layer and described second metal level of described silicon substrate, described light emitting diode construction and described silicon substrate structure is bonding, and between the described the first metal layer of described groove and described LED structure, have air gap.
12. semiconductor light-emitting elements according to claim 11 is characterized in that,
In the described silicon substrate structure, dispose the backplate layer at the back side of described silicon substrate, configuration is used to prevent the trapping layer of current concentration between described epitaxially grown layer and described n type GaAs layer.
13. semiconductor light-emitting elements according to claim 12 is characterized in that,
Described trapping layer is formed by GaAs.
14. according to each described semiconductor light-emitting elements in the claim 11～13, it is characterized in that,
By utilizing the thermo-compressed technology that the described lip-deep described the first metal layer and described second metal level of described silicon substrate is bonding, make described light emitting diode construction and described silicon substrate structure bonding.
15. a semiconductor light-emitting elements is characterized in that,
Have GaAs substrat structure and LED structure,
Described GaAs substrat structure is formed with the GaAs substrate of a plurality of grooves by the surface, be configured in the first metal buffer layer on the bottom surface of the sidewall of the described surface of described GaAs substrate, described groove and described groove, the first metal layer that is disposed on the described first metal buffer layer constitutes;
Described LED structure by be disposed at second metal level on the described the first metal layer, be disposed on described second metal level and patterned metal contact layer and insulating barrier, be disposed on patterned described metal contact layer and the described insulating barrier and have on the surface of exposing roughened area epitaxially grown layer, be disposed on the described epitaxially grown layer and patterned n type GaAs layer, be disposed on the described n type GaAs layer and patterned surface electrode layer constitutes;
Use the described lip-deep described the first metal layer and described second metal level of described GaAs substrate, described light emitting diode construction and described GaAs substrat structure is bonding, and, between second metal level that disposes on the described the first metal layer of described groove and described LED structure, have air gap.
16. semiconductor light-emitting elements according to claim 15 is characterized in that,
In the described GaAs substrat structure, dispose the backplate layer, between described epitaxially grown layer and described n type GaAs layer, dispose the trapping layer that is used to prevent current concentration at the back side of described GaAs substrate.
17. according to claim 15 or 16 described semiconductor light-emitting elements, it is characterized in that,
By utilizing the thermo-compressed technology that the described lip-deep described the first metal layer and second metal level of described GaAs substrate is bonding, make described light emitting diode construction and described GaAs substrat structure bonding.
18. semiconductor light-emitting elements according to claim 15 is characterized in that,
Also have the 3rd metal buffer layer, it is configured on the described the first metal layer, between described the first metal layer and patterned described metal contact layer and described insulating barrier.
19. the manufacture method of a semiconductor light-emitting elements is characterized in that, it comprises:
Preparation is used for bonding Semiconductor substrate structure and is used for the operation of bonding light emitting diode construction;
In described Semiconductor substrate structure, after the surface of Semiconductor substrate forms a plurality of grooves, on described Semiconductor substrate, form the operation of the first metal layer;
In described light emitting diode construction, on the GaAs substrate, form the operation of AlInGaP layer, n type GaAs layer, epitaxially grown layer successively;
On described epitaxially grown layer,, form the operation of the metal contact layer and second metal level at patterned insulating barrier;
Use the described lip-deep described the first metal layer of described Semiconductor substrate, by the thermo-compressed technology with described be used for bonding LED structure and described Semiconductor substrate bonding, and between the described the first metal layer of described groove and described LED structure, form the operation of air gap;
Remove the operation of described GaAs substrate by etching;
Remove the operation of described AlInGaP layer;
Form the operation of composition at surface electrode layer;
Implement roughened, the operation that the described n type GaAs layer beyond the described n type GaAs layer under the described surface electrode layer is removed.
20. the manufacture method of semiconductor light-emitting elements according to claim 19 is characterized in that,
After the operation of removing described AlInGaP layer, and form at described surface electrode layer before the operation of composition, also have the operation of the trapping layer that is formed for stoping current concentration.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007156381A JP5123573B2 (en) | 2007-06-13 | 2007-06-13 | Semiconductor light emitting device and manufacturing method thereof |
| JP156381/2007 | 2007-06-13 | ||
| PCT/JP2008/060476 WO2008152988A1 (en) | 2007-06-13 | 2008-06-06 | Semiconductor light emitting element and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101681970A CN101681970A (en) | 2010-03-24 |
| CN101681970B true CN101681970B (en) | 2011-08-24 |
Family
ID=40129593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800199380A Expired - Fee Related CN101681970B (en) | 2007-06-13 | 2008-06-06 | Semiconductor light emitting element and method for manufacturing the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8039864B2 (en) |
| EP (1) | EP2157623B1 (en) |
| JP (1) | JP5123573B2 (en) |
| KR (1) | KR101473038B1 (en) |
| CN (1) | CN101681970B (en) |
| WO (1) | WO2008152988A1 (en) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100599012B1 (en) * | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | Light emitting diode having a thermal conductive substrate and method of fabricating the same |
| JP5346443B2 (en) * | 2007-04-16 | 2013-11-20 | ローム株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| US8299455B2 (en) * | 2007-10-15 | 2012-10-30 | International Business Machines Corporation | Semiconductor structures having improved contact resistance |
| JP5651288B2 (en) * | 2008-03-25 | 2015-01-07 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
| JP2010067890A (en) * | 2008-09-12 | 2010-03-25 | Hitachi Cable Ltd | Light-emitting element |
| JP2010251531A (en) * | 2009-04-16 | 2010-11-04 | Rohm Co Ltd | Semiconductor light-emitting element |
| CN101840966B (en) * | 2009-05-08 | 2013-07-03 | 晶能光电（江西）有限公司 | Semiconductor light emitting device and method for preparing light emitting diode |
| KR101014013B1 (en) | 2009-10-15 | 2011-02-10 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| KR101072034B1 (en) * | 2009-10-15 | 2011-10-10 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| KR101081193B1 (en) | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| KR101728545B1 (en) * | 2010-04-23 | 2017-04-19 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| CN102376830B (en) * | 2010-08-19 | 2015-07-08 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| KR101138951B1 (en) * | 2010-08-23 | 2012-04-25 | 서울옵토디바이스주식회사 | Light emitting diode |
| US8154034B1 (en) * | 2010-11-23 | 2012-04-10 | Invenlux Limited | Method for fabricating vertical light emitting devices and substrate assembly for the same |
| TWI419367B (en) * | 2010-12-02 | 2013-12-11 | Epistar Corp | Optoelectronic device and method for manufacturing the same |
| TWI546979B (en) * | 2012-03-05 | 2016-08-21 | 晶元光電股份有限公司 | Lighting emitting device with aligned-bonding and the manufacturing method thereof |
| KR20140018534A (en) * | 2012-08-02 | 2014-02-13 | 엘지이노텍 주식회사 | Light emitting device |
| JP6068091B2 (en) * | 2012-10-24 | 2017-01-25 | スタンレー電気株式会社 | Light emitting element |
| TWI563686B (en) * | 2012-12-21 | 2016-12-21 | Hon Hai Prec Ind Co Ltd | Led chip and method manufacturing the same |
| TWI644451B (en) * | 2013-07-10 | 2018-12-11 | 晶元光電股份有限公司 | Light-emitting element |
| CN103594579B (en) * | 2013-11-06 | 2016-04-13 | 南昌黄绿照明有限公司 | A kind of epitaxial structure of iii-nitride light emitting devices |
| DE102014108301A1 (en) * | 2014-06-12 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Semiconductor chip and method for producing a semiconductor chip |
| KR20160037060A (en) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | Light emitting device and method for fabricating the same |
| US9773906B2 (en) * | 2015-04-28 | 2017-09-26 | Samsung Electronics Co., Ltd. | Relaxed semiconductor layers with reduced defects and methods of forming the same |
| KR102336432B1 (en) * | 2015-09-01 | 2021-12-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device and light emitting device package |
| KR102573271B1 (en) * | 2018-04-27 | 2023-08-31 | 삼성전자주식회사 | Semiconductor light emitting device |
| US20230106189A1 (en) * | 2021-10-01 | 2023-04-06 | Lawrence Livermore National Security, Llc | Patterning of diode/substrate interface to reduce thermal lensing |
| CN116364825A (en) * | 2023-06-01 | 2023-06-30 | 江西兆驰半导体有限公司 | Composite buffer layer, preparation method thereof, epitaxial wafer and light-emitting diode |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| US5565694A (en) * | 1995-07-10 | 1996-10-15 | Huang; Kuo-Hsin | Light emitting diode with current blocking layer |
| US5759753A (en) * | 1995-07-19 | 1998-06-02 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device and method of manufacturing the same |
| JP2907170B2 (en) * | 1996-12-28 | 1999-06-21 | サンケン電気株式会社 | Semiconductor light emitting device |
| JPH11103090A (en) * | 1997-09-29 | 1999-04-13 | Hitachi Cable Ltd | Light-emitting diode |
| US6406636B1 (en) * | 1999-06-02 | 2002-06-18 | Megasense, Inc. | Methods for wafer to wafer bonding using microstructures |
| US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| JP4004378B2 (en) * | 2002-10-24 | 2007-11-07 | ローム株式会社 | Semiconductor light emitting device |
| FR2857502B1 (en) * | 2003-07-10 | 2006-02-24 | Soitec Silicon On Insulator | SUBSTRATES FOR CONSTRAINTS SYSTEMS |
| JP4114566B2 (en) * | 2003-07-24 | 2008-07-09 | 信越半導体株式会社 | Semiconductor bonded assembly and method for manufacturing the same, light emitting device and method for manufacturing the same |
| TWI223460B (en) * | 2003-09-23 | 2004-11-01 | United Epitaxy Co Ltd | Light emitting diodes in series connection and method of making the same |
| JP2005223207A (en) | 2004-02-06 | 2005-08-18 | Sharp Corp | Semiconductor light-emitting element and its manufacturing method |
| TWI244220B (en) * | 2004-02-20 | 2005-11-21 | Epistar Corp | Organic binding light-emitting device with vertical structure |
| JP4978877B2 (en) * | 2004-06-10 | 2012-07-18 | 信越半導体株式会社 | Light emitting device manufacturing method and light emitting device |
| JPWO2006112039A1 (en) * | 2005-04-01 | 2008-11-27 | 松下電器産業株式会社 | Surface-mount optical semiconductor device and manufacturing method thereof |
-
2007
- 2007-06-13 JP JP2007156381A patent/JP5123573B2/en not_active Expired - Fee Related
-
2008
- 2008-06-06 WO PCT/JP2008/060476 patent/WO2008152988A1/en active Application Filing
- 2008-06-06 CN CN2008800199380A patent/CN101681970B/en not_active Expired - Fee Related
- 2008-06-06 US US12/452,027 patent/US8039864B2/en active Active
- 2008-06-06 EP EP08765289.7A patent/EP2157623B1/en not_active Not-in-force
- 2008-06-06 KR KR1020107000402A patent/KR101473038B1/en active IP Right Grant
Non-Patent Citations (5)
| Title |
|---|
| JP特开2004-146593A 2004.05.20 |
| JP特开2005-044887A 2005.02.17 |
| JP特开2005-236304A 2005.12.12 |
| JP特开2005-353809A 2005.09.02 |
| JP特开平11-103090A 1999.04.13 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8039864B2 (en) | 2011-10-18 |
| KR20100020515A (en) | 2010-02-22 |
| WO2008152988A1 (en) | 2008-12-18 |
| JP2008311352A (en) | 2008-12-25 |
| EP2157623A1 (en) | 2010-02-24 |
| EP2157623A4 (en) | 2013-12-25 |
| CN101681970A (en) | 2010-03-24 |
| JP5123573B2 (en) | 2013-01-23 |
| EP2157623B1 (en) | 2017-01-18 |
| US20100133505A1 (en) | 2010-06-03 |
| KR101473038B1 (en) | 2014-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101681970B (en) | Semiconductor light emitting element and method for manufacturing the same | |
| US11616172B2 (en) | Semiconductor light emitting device with frosted semiconductor layer | |
| JP2008091862A (en) | Nitride semiconductor light emitting device, and manufacturing method of nitride semiconductor light emitting device | |
| TWI489651B (en) | Process for producing light emitting diode and process for cutting light emitting diode | |
| JP5584331B2 (en) | Semiconductor light emitting device | |
| KR20070088920A (en) | Nitride light emitting diode including laser energy absorbing superlattices and fabrication method thereof | |
| TWI464797B (en) | Process for producing light emitting diode, process for cutting light emitting diode and light emitting diode | |
| JP2012222033A (en) | Light-emitting diode manufacturing method and cutting method and light-emitting diode | |
| JP5981493B2 (en) | Semiconductor light emitting device | |
| JP5396526B2 (en) | Semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110824 Termination date: 20210606 |