CN101677116A - Encapsulating method and encapsulating module for LED chip - Google Patents
Encapsulating method and encapsulating module for LED chip Download PDFInfo
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- CN101677116A CN101677116A CN200810200116A CN200810200116A CN101677116A CN 101677116 A CN101677116 A CN 101677116A CN 200810200116 A CN200810200116 A CN 200810200116A CN 200810200116 A CN200810200116 A CN 200810200116A CN 101677116 A CN101677116 A CN 101677116A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses an encapsulating method and an encapsulating module for an LED chip, solving the problems of heat dissipation and cost of LED encapsulation application. The technical scheme ofthe invention is that the method comprises the following steps: opening at least one through hole on a first insulating layer of a FR4 base material; filling the through hole through electroplating high-thermal conductive metal to form a metal column; electroplating or laminating a metal copper layer to be closely connected with the metal column to form a heat diffusing surface; pressing a secondinsulating layer on the metal copper layer, and forming a groove at the part of plating the metal column; coating copper cabling on the second insulating layer by electrical interconnection to form acopper coating layer; constantly laminating a third insulating layer on the copper coating layer, and increasing depth of the groove, and forming a groove with an inclined angle; coating a reflectionlayer on the surface of the groove; arranging a gap on a fourth insulating layer on the uppermost layer of the FR4 base material; encapsulating the LED chip on the metal plated position in the groove, binding the LED chip to the copper coating layer through gold threads, and coating phosphor powder on the LED chip; and injecting silica gel on the LED chip to form a lens. The method is applicablein the filed of LED chip encapsulation.
Description
Technical field
The present invention relates to a kind of method for packing and encapsulating structure of led chip, relate in particular to a kind of COB (Chip On Board) method for packing and package module of large power white light LED chip.
Background technology
The encapsulating structure of existing high-power LED chip as shown in Figure 1, high-power LED chip 10 is encapsulated in and forms single luminescent device on the copper base support 14.When using, led chip 10 is welded on the substrate 19.Be covered with insulating barrier 17 on the surface of metal substrate 16 and cover copper layer (being also referred to as wiring layer) 18 by what Copper Foil constituted.Led chip 10 by scolder with cover copper layer 18 and be electrically connected.The metal substrate 16 general high thermal conductivity metals such as aluminium, copper that adopt, the insulating barrier 17 general polymeric materials etc. that use.Owing to there is the low thermal conductiv-ity of a plurality of hot interfaces and substrate insulating layer 17 between led chip 10 and the substrate 19, cause the heat of led chip 10 to derive, work long hours and will cause the light decay aggravation of LED, brightness reduces, and shorten useful life.Simultaneously, metal substrate 16 is also perplexing the application and the popularization of great power LED because cost is too high.
At some problems of above application, a kind of improvement structure of the COB of employing encapsulation is arranged, as shown in Figure 2.Led chip 10 is encapsulated in the recessed cup on the metal substrate 18, has improved the heat radiation of LED.At the bottom of led chip 10 is fixed in glass, be electrically connected by the copper layer 18 that covers of gold thread 13 with substrate 19.This method has reduced the hot interface of LED encapsulation, heat radiation is had some improvement, but its bonding wire is exposed on the substrate, also has certain problem aspect reliability.
Summary of the invention
The objective of the invention is to address the above problem, a kind of method for packing of led chip is provided, be convenient to solve the heat radiation and the cost problem of LED package application, and can adjust the rising angle of LED encapsulation as required, can satisfy the power requirement of lighting simultaneously.
Another object of the present invention has provided a kind of package module of led chip, is convenient to solve the heat radiation and the cost problem of LED package application, and can adjust the rising angle of LED encapsulation as required, can satisfy the power requirement of lighting simultaneously.
Technical scheme of the present invention is: the present invention has disclosed a kind of method for packing of led chip, comprising:
On first insulating barrier of FR4 base material, offer at least one through hole;
By electroplating metal filled full this through hole of high thermal conductivity, form metal column;
Plating or laminating layer metal copper layer closely are connected with metal column, form heat diffusing surface;
On this metal copper layer, press first insulating layer, and form groove at plating post place;
On this second insulating barrier, cover the copper wiring with electrical interconnection, form and cover the copper layer;
Cover continuous lamination the 3rd insulating barrier on the copper layer at this, increase the degree of depth of this groove and form groove with angle of inclination;
Coat reflector layer in this groove surfaces with angle of inclination;
On the 4th insulating barrier of the superiors that are positioned at this FR4 base material, a breach is set;
Led chip is encapsulated in the plating place in this groove with angle of inclination, is tied to by gold thread and covers the copper layer, be covered with fluorescent material then;
Inject silica gel to form lens.
The method for packing of above-mentioned led chip, wherein, this groove with angle of inclination comprise round platform groove, arc groove or step groove one of them.
The method for packing of above-mentioned led chip, wherein, injecting silica gel is directly silica gel to be injected to form lens by breach with the step that forms lens.
The method for packing of above-mentioned led chip, wherein, injecting silica gel is to inject silica gel to form lens in lens with the step that forms lens.
The method for packing of above-mentioned led chip, wherein, this high thermal conductivity metal is a copper.
The present invention has also disclosed a kind of package module of led chip, comprising:
The FR4 substrate comprises:
First insulating barrier is positioned at the bottom of this FR4 substrate, offers at least one through hole on it;
Electroplated metal layer is formed on the whole surface of this first insulating barrier, electroplates the high thermal conductivity metal to fill this through hole and to form metal column therein;
Second insulating barrier on this electroplated metal layer, forms the groove with angle of inclination at plating post place, scribbles reflector layer on the surface of this groove;
Cover the copper layer, on this second insulating barrier, cover the copper wiring with electrical interconnection;
The 3rd insulating barrier is positioned at this and covers on the copper layer;
Top layer is positioned at the top of this FR4 substrate, which is provided with a breach;
Led chip is encapsulated in the plating place in this groove with angle of inclination, is tied to this by gold thread and covers the copper layer, is covered with fluorescent material on this chip;
Layer of silica gel is positioned on this led chip that is covered with fluorescent material.
The package module of above-mentioned led chip, wherein, this groove with angle of inclination comprise round platform groove, arc groove or step groove one of them.
The package module of above-mentioned led chip, wherein, this layer of silica gel is provided with lens.
The package module of above-mentioned led chip, wherein, this electroplated metal layer is to cover the copper layer, this high thermal conductivity metal is a copper.
The present invention contrasts prior art, and following beneficial effect is arranged: the present invention directly is encapsulated in led chip on the FR4 printed circuit board (PCB), has simplified the LED encapsulating structure, has reduced hot interface, has reduced packaging cost.The heat that LED produces can conduct rapidly by the copper post of bottom.And the present invention forms the reflective rounding platform groove of LED by laminated multi-layer technology, can obtain different reflection angles by the tapering of regulating the round platform groove.Can encapsulate the plurality of LEDs chip on same FR4 printed circuit board (PCB), the LED package module of making has good heat dissipation characteristics, optical characteristics and very high reliability.
Description of drawings
Fig. 1 is that existing high-power LED encapsulation is installed in the cutaway view on the substrate.
Fig. 2 is that existing high-power LED encapsulation COB is encapsulated in the cutaway view on the substrate.
Fig. 3 is the flow chart of first embodiment of led chip method for packing of the present invention.
Fig. 4 is the profile of first embodiment of led chip package module of the present invention.
Fig. 5 is the vertical view of Fig. 4 embodiment.
Fig. 6 is the flow chart of second embodiment of led chip method for packing of the present invention.
Fig. 7 is the profile of second embodiment of led chip package module of the present invention.
Fig. 8 is the flow chart of the 3rd embodiment of led chip method for packing of the present invention.
Fig. 9 is the profile of the 3rd embodiment of led chip package module of the present invention.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
First embodiment of method for packing
Fig. 3 shows the flow process of first embodiment of led chip method for packing of the present invention.Seeing also Fig. 3, is the detailed description to each step of the led chip method for packing of present embodiment below.
Step S10: on first insulating barrier of FR4 base material, offer a plurality of through holes.The distance that can equate at interval between each through hole.
Step S11:, form metal column by electroplating metal filled full these through holes of high-termal conductivity.Generally speaking, be to adopt electro-coppering to fill full these through holes, form the copper post.
Step S12: electroplate or the laminating layer metal copper layer, closely be connected, form heat diffusing surface with metal column.
Step S13: on metal copper layer, press first insulating layer, and form groove at plating post place.
Step S14: on second insulating barrier, cover the copper wiring to realize electrical interconnection, cover copper layer (also being called wiring layer) thereby form.
Step S15: covering not discontinue the 3rd insulating barrier on the copper layer, increasing depth of groove and form groove with angle of inclination.Groove is the groove of reverse frustoconic shape in the present embodiment, can certainly be arc groove or step groove.
Step S16: coat reflecting material to form reflector layer in groove surfaces.
Step S17 a: breach is set on the 4th insulating barrier of the superiors that are positioned at the FR4 base material.
Step S18: led chip is encapsulated in the plating place in the groove, is tied to by gold thread and covers the copper layer, be covered with fluorescent material then.
Step S19: directly inject silica gel to form lens by breach.
The method of present embodiment adopts the FR4 circuit board, and the method by the electro-coppering filling vias is encapsulated in LED on a plurality of copper posts, has simplified the encapsulating structure of LED greatly.Adopted the COB technology that led chip directly is installed on circuit board in addition, be easy to make.
First embodiment of package module
Fig. 4 shows the cross-section structure of package module of the led chip of corresponding diagram 3, and Fig. 5 illustrates its vertical view.See also Fig. 4, the package module of the led chip of present embodiment comprises FR4 substrate 37a, led chip 10a and layer of silica gel 12a.Wherein FR4 substrate 37a further comprise the first insulating barrier 32a, copper electroplating layer 31a, the second insulating barrier 33a, cover copper layer 34a, the 3rd insulating barrier 35a and the 4th insulating barrier 38a.The first insulating barrier 32a is positioned at the bottom of FR4 substrate 37a, offers a plurality of through holes on it, these through hole spaced sets.Copper electroplating layer 31a also forms the copper post by electro-coppering to fill these through holes therein on the first insulating barrier 32a.The second insulating barrier 33a and forms the groove with angle of inclination at the copper plated pillars place on copper electroplating layer 31a, for example be down in the present embodiment round table-like groove, can certainly be arc groove or step groove.Groove surfaces scribbles reflecting material to form reflector layer.Cover copper layer 34a and on the second insulating barrier 33a, cover the copper wiring to realize electrical interconnection.The 3rd insulating barrier 35a is positioned at and covers on the copper layer 34a.The 4th insulating barrier 38a is positioned at the top of FR4 substrate 37a, which is provided with a breach.
Led chip 10a is encapsulated in copper facing place in the groove, is tied to by gold thread 13a and covers copper layer 34a, is covered with fluorescent material 11a on chip 10a.Layer of silica gel 12a is positioned on this led chip 10a that is covered with fluorescent material 11a.
Please be simultaneously referring to Fig. 5, encapsulation plurality of LEDs chip on FR4 substrate 37a, copper pad 34a realizes being electrically connected the outside.
Second embodiment of method for packing
Fig. 6 shows the flow process of first embodiment of led chip method for packing of the present invention.Seeing also Fig. 6, is the detailed description to each step of the led chip method for packing of present embodiment below.
Step S20: on first insulating barrier of FR4 base material, offer a through hole that area is bigger.
Step S21:, form metal column by electroplating metal filled full this through hole of high-termal conductivity.Generally speaking, be to adopt electro-coppering to fill full these through holes, form the copper post.Also can solidify the back by the highly heat-conductive material of filling other and form heating column.
Step S22: plating or laminating layer metal copper layer closely are connected with metal column, form heat diffusing surface.
Step S23: on metal copper layer, press first insulating layer, and form groove at plating post place.
Step S24: on second insulating barrier, cover the copper wiring to realize electrical interconnection, cover copper layer (also being called wiring layer) thereby form.
Step S25: covering not discontinue the 3rd insulating barrier on the copper layer, increasing depth of groove and form groove with angle of inclination.Groove is the groove of reverse frustoconic shape in the present embodiment, can certainly be arc groove or step groove.
Step S26: coat reflecting material to form reflector layer in groove surfaces.
Step S27 a: breach is set on the 4th insulating barrier of the superiors that are positioned at the FR4 base material.
Step S28: led chip is encapsulated in the plating place in the groove, is tied to by gold thread and covers the copper layer, be covered with fluorescent material then.
Step S29: directly inject silica gel to form lens by breach.
The method of present embodiment adopts the FR4 circuit board, and the method by the electro-coppering filling vias is encapsulated in LED on this bigger copper post, has simplified the encapsulating structure of LED greatly.Adopted the COB technology that led chip directly is installed on circuit board in addition, be easy to make.
Second embodiment of package module
Fig. 7 shows the cross-section structure of package module of the led chip of corresponding diagram 6.See also Fig. 7, the package module of the led chip of present embodiment comprises FR4 substrate 37b, led chip 10b and layer of silica gel 12b.Wherein FR4 substrate 37b further comprise the first insulating barrier 32b, copper electroplating layer 31b, the second insulating barrier 33b, cover copper layer 34b, the 3rd insulating barrier 35b and the 4th insulating barrier 38b.The first insulating barrier 32b is positioned at the bottom of FR4 substrate 37b, offers a through hole that area is bigger on it.Copper electroplating layer 31a also forms the copper post by electro-coppering to fill this through hole therein on the first insulating barrier 32b.The second insulating barrier 33b and forms the groove with angle of inclination at the copper plated pillars place on copper electroplating layer 31b, for example be down in the present embodiment round table-like groove, can certainly be arc groove or step groove.Groove surfaces scribbles reflecting material to form reflector layer.Cover copper layer 34b and on the second insulating barrier 33b, cover the copper wiring to realize electrical interconnection.The 3rd insulating barrier 35b is positioned at and covers on the copper layer 34b.The 4th insulating barrier 38b is positioned at the top of FR4 substrate 37b, which is provided with a breach.
Led chip 10b is encapsulated in copper facing place in the groove, is tied to by gold thread 13b and covers copper layer 34b, is covered with fluorescent material 11b on chip 10b.Layer of silica gel 12b is positioned on this led chip 10b that is covered with fluorescent material 11b.
Same, encapsulation plurality of LEDs chip on FR4 substrate 37b, copper pad 34b realizes being electrically connected the outside.
The 3rd embodiment of method for packing
Fig. 8 shows the flow process of the 3rd embodiment of led chip method for packing of the present invention.Seeing also Fig. 8, is the detailed description to each step of the led chip method for packing of present embodiment below.
Step S30: on first insulating barrier of FR4 base material, offer a plurality of through holes.The distance that can equate at interval between each through hole.
Step S31:, form metal column by electroplating metal filled full these through holes of high-termal conductivity.Generally speaking, be to adopt electro-coppering to fill full these through holes, form the copper post.
Step S32: plating or laminating layer metal copper layer closely are connected with metal column, form heat diffusing surface.
Step S33: on metal copper layer, press first insulating layer, and form groove at plating post place.
Step S34: on second insulating barrier, cover the copper wiring to realize electrical interconnection, cover copper layer (also being called wiring layer) thereby form.
Step S35: covering not discontinue the 3rd insulating barrier on the copper layer, increasing depth of groove and form groove with angle of inclination.Groove is the groove of reverse frustoconic shape in the present embodiment, can certainly be arc groove or step groove.
Step S36: coat reflecting material to form reflector layer in groove surfaces.
Step S37 a: breach is set on the 4th insulating barrier of the superiors that are positioned at the FR4 base material.
Step S38: led chip is encapsulated in the plating place in the groove, is tied to by gold thread and covers the copper layer, be covered with fluorescent material then.
Step S39:, also can be PMMA lens or COC lens by in PC (polycarbonate, polycarbonate) lens, injecting silica gel to form lens.
The method of present embodiment adopts the FR4 circuit board, and the method by the electro-coppering filling vias is encapsulated in LED on a plurality of copper posts, has simplified the encapsulating structure of LED greatly.Adopted the COB technology that led chip directly is installed on circuit board in addition, be easy to make.
The 3rd embodiment of package module
Fig. 9 shows the cross-section structure of package module of the led chip of corresponding diagram 8.See also Fig. 9, the package module of the led chip of present embodiment comprises FR4 substrate 37c, led chip 10c, layer of silica gel 12c and PC lens 61c.Wherein FR4 substrate 37c further comprise the first insulating barrier 32c, copper electroplating layer 31c, the second insulating barrier 33c, cover copper layer 34c, the 3rd insulating barrier 35c and the 4th insulating barrier 38c.The first insulating barrier 32c is positioned at the bottom of FR4 substrate 37c, offers a plurality of through holes on it, these through hole spaced sets.Copper electroplating layer 31c also forms the copper post by electro-coppering to fill these through holes therein on the first insulating barrier 32c.The second insulating barrier 33c and forms the groove with angle of inclination at the copper plated pillars place on copper electroplating layer 31c, for example be down in the present embodiment round table-like groove, can certainly be arc groove or step groove.Groove surfaces scribbles reflecting material to form reflector layer.Cover copper layer 34c and on the second insulating barrier 33c, cover the copper wiring to realize electrical interconnection.The 3rd insulating barrier 35c is positioned at and covers on the copper layer 34c.The 4th insulating barrier 38c is positioned at the top of FR4 substrate 37c, which is provided with a breach.
Led chip 10c is encapsulated in copper facing place in the groove, is tied to by gold thread 13c and covers copper layer 34c, is covered with fluorescent material 11c on chip 10c.Layer of silica gel 12c is positioned on this led chip 10c that is covered with fluorescent material 11c.And PC lens 61c is positioned on the layer of silica gel 12c, and the PC lens also can be replaced by PMMA lens or COC lens.
Can be on FR4 substrate 37c with above-mentioned construction packages plurality of LEDs chip, copper pad 34c realizes being electrically connected the outside.
The foregoing description provides to those of ordinary skills and realizes or use of the present invention; those of ordinary skills can be under the situation that does not break away from invention thought of the present invention; the foregoing description is made various modifications or variation; thereby protection scope of the present invention do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (9)
1, a kind of method for packing of led chip comprises:
On first insulating barrier of FR4 base material, offer at least one through hole;
By electroplating metal filled full this through hole of high thermal conductivity, form metal column;
Plating or laminating layer metal copper layer closely are connected with metal column, form heat diffusing surface;
On this metal copper layer, press first insulating layer, and form groove at plating post place;
On this second insulating barrier, cover the copper wiring with electrical interconnection, form and cover the copper layer;
Cover continuous lamination the 3rd insulating barrier on the copper layer at this, increase the degree of depth of this groove and form groove with angle of inclination;
Coat reflector layer in this groove surfaces with angle of inclination;
On the 4th insulating barrier of the superiors that are positioned at this FR4 base material, a breach is set;
Led chip is encapsulated in the plating place in this groove with angle of inclination, is tied to by gold thread and covers the copper layer, be covered with fluorescent material then;
Inject silica gel to form lens.
2, the method for packing of led chip according to claim 1 is characterized in that, this groove with angle of inclination comprise round platform groove, arc groove or step groove one of them.
3, the method for packing of led chip according to claim 1 is characterized in that, injecting silica gel is directly silica gel to be injected to form lens by breach with the step that forms lens.
4, the method for packing of led chip according to claim 1 is characterized in that, injecting silica gel is to inject silica gel to form lens in lens with the step that forms lens.
5, the method for packing of led chip according to claim 1 is characterized in that, this high thermal conductivity metal is a copper.
6, a kind of package module of led chip comprises:
The FR4 substrate comprises:
First insulating barrier is positioned at the bottom of this FR4 substrate, offers at least one through hole on it;
Electroplated metal layer is formed on the whole surface of this first insulating barrier, electroplates the high thermal conductivity metal to fill this through hole and to form metal column therein;
Second insulating barrier on this electroplated metal layer, forms the groove with angle of inclination at plating post place, scribbles reflector layer on the surface of this groove;
Cover the copper layer, on this second insulating barrier, cover the copper wiring with electrical interconnection;
The 3rd insulating barrier is positioned at this and covers on the copper layer;
Top layer is positioned at the top of this FR4 substrate, which is provided with a breach;
Led chip is encapsulated in the plating place in this groove with angle of inclination, is tied to this by gold thread and covers the copper layer, is covered with fluorescent material on this chip;
Layer of silica gel is positioned on this led chip that is covered with fluorescent material.
7, the package module of led chip according to claim 6 is characterized in that, this groove with angle of inclination comprise round platform groove, arc groove or step groove one of them.
8, the package module of led chip according to claim 6 is characterized in that, this layer of silica gel is provided with lens.
9, the package module of led chip according to claim 6 is characterized in that, this electroplated metal layer is to cover the copper layer, and this high thermal conductivity metal is a copper.
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| CN2008102001164A CN101677116B (en) | 2008-09-19 | 2008-09-19 | Encapsulating method and encapsulating module for LED chip |
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| CN2008102001164A CN101677116B (en) | 2008-09-19 | 2008-09-19 | Encapsulating method and encapsulating module for LED chip |
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| CN101677116A true CN101677116A (en) | 2010-03-24 |
| CN101677116B CN101677116B (en) | 2011-06-08 |
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| WO2012006817A1 (en) * | 2010-07-16 | 2012-01-19 | 福建中科万邦光电股份有限公司 | Packaging structure for led light source module |
| CN102610583A (en) * | 2011-01-19 | 2012-07-25 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| CN102832294A (en) * | 2011-06-13 | 2012-12-19 | 中山市世耀光电科技有限公司 | Method for packaging LED light source and LED light source |
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| JP2006147744A (en) * | 2004-11-18 | 2006-06-08 | Seiko Epson Corp | Light source device and projector using the device |
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| WO2012006817A1 (en) * | 2010-07-16 | 2012-01-19 | 福建中科万邦光电股份有限公司 | Packaging structure for led light source module |
| CN102610583A (en) * | 2011-01-19 | 2012-07-25 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
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| CN102610583B (en) * | 2011-01-19 | 2015-06-24 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| CN102832294A (en) * | 2011-06-13 | 2012-12-19 | 中山市世耀光电科技有限公司 | Method for packaging LED light source and LED light source |
| CN103503178A (en) * | 2011-07-12 | 2014-01-08 | 松下电器产业株式会社 | Optical element and semiconductor light-emitting device employing same |
| US8969903B2 (en) | 2011-07-12 | 2015-03-03 | Panasonic Intellectual Property Management Co., Ltd. | Optical element and semiconductor light emitting device using the optical element |
| CN103503178B (en) * | 2011-07-12 | 2015-04-29 | 松下电器产业株式会社 | Optical element and semiconductor light-emitting device employing same |
| CN103855272A (en) * | 2012-11-30 | 2014-06-11 | 联京光电股份有限公司 | Light emitting diode packaging structure and related manufacturing method |
| CN104124216A (en) * | 2014-07-03 | 2014-10-29 | 天水华天科技股份有限公司 | Substrate chip carrier CSP package and production method thereof |
| CN108807290A (en) * | 2018-06-15 | 2018-11-13 | 南通沃特光电科技有限公司 | A kind of semiconductor power device package module and its manufacturing method |
| CN110010563A (en) * | 2018-10-10 | 2019-07-12 | 浙江集迈科微电子有限公司 | A kind of bottom heat radiation type radio frequency chip pinboard packaging technology |
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| CN101677116B (en) | 2011-06-08 |
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