CN101673653A

CN101673653A - Electron beam device and image display apparatus using the same

Info

Publication number: CN101673653A
Application number: CN200910170514A
Authority: CN
Inventors: 窪田央一; 铃木朝岳; 川崎秀司; 小林玉树; 武田俊彦
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 2008-09-09
Filing date: 2009-09-04
Publication date: 2010-03-17
Also published as: US20100060141A1; JP2010092843A

Abstract

The invention discloses an electron beam device and an image display apparatus using the same. In the electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.

Description

Electron beam device and the image display device that uses described electron beam device

Technical field

[0001] the present invention relates to a kind of electron beam device and a kind of image display device that uses described electron beam device that is used for emitting electrons.

Background technology

[0002] traditionally, known electron emission device makes a large amount of electronics from cathode emission, with the grid collision on opposite, and scattering therein, extract electronics then.The electron emission device of known surface conduction type and the electron emission device that piles up type are the devices with this form emitting electrons.Japanese Patent Application Laid-Open No.2001-167693 discloses a kind of electron emission device that piles up type, in the structure that it had, provides recess near the insulating barrier electron emission part.

[0003] Japanese Patent Application Laid-Open No.2001-43789 discloses a kind of electron emission device of Spindt type, it has and makes collision of electronics and grid and scattering therein extract the form and the structure of the diverse extraction electronics of above-mentioned electron emission device of electronics then, and it adopts the conductive layer of laminated construction for its grid.Specifically, disclosedly be, grid comprises first conductive layer and is stacked on second conductive layer on first conductive layer, and makes the thermal linear expansion coefficient of second conductive layer less than the thermal linear expansion coefficient of first conductive layer.

Summary of the invention

[0004] the objective of the invention is to make electron beam device can easily obtain stable electron emission characteristic, and even when in electron emission device, producing too much heat, prevent that also it is because of overheated deterioration or fracture by the electron emission device that use makes electronics and grid collision and scattering therein extract electronics then.

[0005] to achieve these goals, the invention provides a kind of electron beam device, comprising: insulating component, it has recess on the surface of described insulating component; Negative electrode, it has the projection of extending on the inner surface of the outer surface of described insulating component and described recess; Grid, it is disposed on the outer surface of described insulating component, and described grid is in the face of described projection; And anode, it faces described projection via described grid, wherein, described grid comprises the laminated construction with at least two conductive layers, and is disposed in the described conductive layer in the face of the thermal coefficient of expansion of the conductive layer at the part place of the described projection thermal coefficient of expansion greater than the remaining conductive layer in the described conductive layer.

[0006] the present invention can provide a kind of long-time section electron emission device that keeps stablizing electron emission characteristic.

[0007] in conjunction with the accompanying drawings from the description of following exemplary embodiment, further feature of the present invention will become clear.

Description of drawings

[0008] Figure 1A, Figure 1B and Fig. 1 C are the schematic diagrames of the electron emission device of first example according to the present invention.

[0009] Fig. 2 is the schematic diagram that an example of arranging according to the power supply of electron beam device of the present invention is shown.

[0010] Fig. 3 is the vertical view that is used for describing according to the electronics emission state of electron emission device of the present invention.

[0011] Fig. 4 A and Fig. 4 B are the views that is used to describe according to the operation during the driving period of electron emission device of the present invention.

[0012] Fig. 5 A, Fig. 5 B, Fig. 5 C, Fig. 5 D, Fig. 5 E, Fig. 5 F and Fig. 5 G are the views of method that is used to describe the manufacturing electron emission device of first example according to the present invention.

[0013] Fig. 6 is the view that is used to describe the structure of the imaging device that uses electron source of the present invention.

[0014] Fig. 7 is near the view that is used for describing according to the recess of electron emission device of the present invention.

[0015] Fig. 8 A, Fig. 8 B and Fig. 8 C are the schematic diagrames of the electron emission device of second example according to the present invention.

[0016] Fig. 9 A, Fig. 9 B and Fig. 9 C are the schematic diagrames of the electron emission device of the 3rd example according to the present invention.

[0017] Figure 10 is the vertical view of the electron emission device of the 3rd example according to the present invention.

[0018] Figure 11 A, Figure 11 B, Figure 11 C, Figure 11 D and Figure 11 E are the views of method that is used to describe the manufacturing electron emission device of the 3rd example according to the present invention.

[0019] Figure 12 A, Figure 12 B and Figure 12 C are the schematic diagrames of the electron emission device of the 4th example according to the present invention.

Embodiment

[0020] at first, describe in detail according to exemplary embodiment of the present invention in the mode of explanation hereinafter with reference to accompanying drawing.Yet except as otherwise noted, otherwise size of the assembly of describing among the embodiment, material, shape, positioned opposite mode etc. are not that scope of the present invention only is limited to this.

[0021] the big quantity research of the present invention's process, thereby all operations stably of each electronic launching point of electron emission part in the entire device scope with simple structure.

[0022] at first, will the structure etc. of the electron emission device of first example according to the present invention be described.

[0023] Figure 1A to Fig. 1 C is the schematic diagram of the electron emission device of first example according to the present invention.At this, Figure 1A is the top plan view of the device watched from above, and Figure 1B is the sectional view that the line 1B-1B along Figure 1A obtains, and Fig. 1 C is the end view from the device of the Figure 1A that watches towards the direction of 1B from 1B.

[0024] in Figure 1A to Fig. 1 C, substrate 1, electrode (device electrode) 2, first insulating barrier 3 and second insulating barrier, 4, the first insulating barriers 3 and second insulating barrier, 4 formation insulating components 9 are shown.Grid 5 comprises two-layer: conductive layer 5a and 5b.In addition, negative electrode 6a is provided on the outer surface (side wall surface of first insulating barrier 3 in this example) of insulating component 9.Negative electrode 6a makes with electric conducting material, and is electrically connected with device electrode 2.

[0025] recess 7 is such zones: the withdrawal of the side wall surface of second insulating barrier 4 in the outer surface of insulating component 9 caves inward thereby compare with the side wall surface of the front end face of grid 5 and first insulating barrier 3.Gap 8 (beeline between negative electrode 6a and the grid 5) also is shown, forms the required electric field of electronics emission herein.Gap 8 is very narrow, and forms (in other words, among Fig. 1 C from left to right) in a lateral direction of device normally uniform.

[0026] negative electrode 6a has projection 30, and it is oriented to cross over the outer surface of insulating component 9 and the inner surface of recess 7, and the inner surface of recess 7 adjoins described outer surface and is extended to described outer surface, will describe in detail after a while.The jut of negative electrode is an electron emission part, it is oriented to cross over the outer surface of insulating barrier and the inner surface of recess, and correspondingly can obtain the sufficient contact area with insulating component, thereby the negative electrode that can obtain to have high-adhesive-strength and high thermal stability.

[0027] Fig. 2 illustrates an example of arranging according to the power supply in the electron beam device of the present invention.Voltage Vf is applied between grid 5 and the negative electrode 6a, and device current If flows between these two electrodes.Anode 20 is orientated as by grid 5 relative with the projection 30 of negative electrode 6a.Voltage Va is applied to anode 20 and is between the negative electrode of low potential side, and electron emission current Ie flows between these two electrodes.

[0028] at this, to be time per unit arrive the ratio of quantity of the electronics of anode 20 from the quantity of negative electrode 6a electrons emitted to efficiency eta for time per unit, provides efficiency eta by using device current And if electron emission current Ie with expression formula η=Ie/ (If+Ie).

[0029] subsequently, existing with reference to the track of Fig. 3 description from the device electrons emitted.

[0030] electronics of launching at first with the collision of the fore-end of grid 5.Electronics after some collision is extracted by grid 5, and the scattering on all directions on the surface of grid 5 of other electronics.The electronic flight of scattering, simultaneously its direction and speed are changed by peripheral electric field, and some electronics is extracted the outside, and do not collide with grid.The label 10 of Fig. 3 illustrates the example of track.Other electronics attracted to grid 5, and collides with end face 51, side 52 and the back 53 of grid.After this, repeat to extract the electronics after some collision and the processing of other electronics of scattering.The label 1l of Fig. 3 illustrates the example of track.

[0031] in Fig. 2, electron emission current Ie is a total quantity (time per unit) of finally being extracted the electronics in the device outside after above-mentioned repeatedly scattering, and device current If is the total quantity of the electronics of grid 5 extractions.Because the electronics and the grid 5 that go out from cathode emission collide, and above-mentioned If is mobile in grid, therefore grid 5 produces heat.

[0032] the heat production of grid 5 now will be described.

[0033] Fig. 4 A is near the view that Figure 1B center dant 7 is shown enlargedly, and is illustrated in the morning interim state of device of the present invention after being driven.

[0034] in Fig. 4 A, insulating component 9 comprises first insulating barrier 3 and second insulating barrier 4.Grid 5 has double-layer structure, comprises conductive layer 5a and lower conductiving layer 5b.Lower conductiving layer 5b is positioned in the part relative with projection 30, is positioned on the lower conductiving layer 5b and go up conductive layer 5a.Negative electrode 6a is shown, as the front end C of the projection 30 and the projection 30 at negative electrode top.Also illustrate from a track of C electrons emitted 40.The fore-end 31 of lower conductiving layer 5b and the section H of institute's electrons emitted and lower conductiving layer 5b collision are shown.The distance in gap (d) is the distance between a C and the some H.

[0035] near the part the recess 7 of remarkable generation heat is as the projection 30 at negative electrode 6a top and the fore-end 31 of lower conductiving layer 5b when device is driven.Owing to from a C emitting electrons, projection 30 produces heat owing to Nottingham effect and Joule heat (Joule heat).On the other hand, the fore-end 31 of grid is subjected to extracting from a H energy heating of the electronics of grid 5.Grid 5 also is subjected to the electrons heat that the result as scattering is repeatedly extracted by lower conductiving layer 5b and last conductive layer 5a.

[0036] if suitably make up device, even then when driving during the period because of above-mentioned former thereby when producing heat, device can not have problems in operation yet.Yet, when the distance (d) in gap because of the fluctuation of manufacture view during less than predetermined length, perhaps when the molecule of residual gas is adsorbed during operation, can be from the electronics of a C emission than the more quantity of imagination.Near the too much heat that produces recess 7 causes the distortion and the fusing of grid 5, and causes the deterioration or the fracture of device property under extreme case.

[0037] in addition, when the projection 30 of negative electrode 6a also was formed on the inner surface of recess 7, shown in Fig. 4 A, the power (Coulomb force) that grid 5 is attracted to negative electrode 6a became big, and grid 5 may be out of shape towards negative electrode 6a.When grid 5 when negative electrode 6a is out of shape, more polyelectron and grid 5 collisions, and device current If (see figure 2) increases, therefore, the heat in the grid 5 produces to be increased, and causes grid 5 to be tending towards producing above-mentioned distortion and fusing, this is a problem.

[0038] in order to prevent this situation, the grid 5 among the present invention has sandwich construction, and lower conductiving layer 5b forms with the material with thermal coefficient of expansion bigger than last conductive layer 5a.

[0039] Fig. 4 B illustrates the state according to device of the present invention, and it is operated and suppresses to produce too much heat.In Fig. 4 B, illustrate section H from a track of C electrons emitted 41 and institute's electrons emitted and lower conductiving layer 5b collision '.In addition, the distance in gap (d ') is the distance between a C and the some H '.

[0040] when producing heat near recess 7, the temperature of grid 5 also rises.Then, because of differing between the thermal coefficient of expansion of the thermal coefficient of expansion of lower conductiving layer 5b and last conductive layer 5a causes grid 5 bendings, thereby the fore-end of grid 31 moves away projection 30, and the distance in gap (d ') increases.As a result, the electric field among the some C reduces, and the emission current minimizing, thereby near the heat that will produce recess 7 also reduces.This distance (d ') in gap is regulated automatically according to the degree of the heat that will produce in device, thus the operation stably of the long-time section of device.In this way, structure according to the present invention represents following advantage.

[0041] at first, negative electrode according to the present invention is oriented to cross over the outer surface and the recess inner surface of insulating component, and has the projection as the part of and emitting electrons relative with anode.Projection is provided as crossing over two surfaces of the inner surface of the outer surface that comprises described insulating component and described recess, thereby negative electrode can have the wide surface that is used to bond to insulating component, more excellent mechanical stability and the heat-delivery surface of broad.For this reason, device can easily obtain stable electron emission characteristic, and shows more excellent thermal characteristics.

[0042] in addition, grid according to the present invention has the laminated construction that comprises at least two conductive layers, and described conductive layer has the thermal coefficient of expansion that differs from one another, thereby when extremely overheated, grid is crooked because of bimetallic effect.In addition, the thermal coefficient of expansion of conductive layer that is arranged in the part relative with projection is greater than the thermal coefficient of expansion of other conductive layer, thereby grid is towards the direction bending that moves away from above-mentioned projection.As a result, the electric field between negative electrode and the anode weakens, and the amount of institute's electrons emitted is suppressed, and heat value reduces, and can prevent because of overheated device deterioration that causes and device fracture.

[0043] in addition, when the temperature of grid reduced, the bending of grid was resumed.When the temperature of grid rises once more, the grid bending, and temperature reduces.Above-mentioned steps will repeat automatically.

[0044] correspondingly, the present invention can provide preferred electron emission device, even it also keeps stable device property when long-time section is driven.

[0045] in the above description, the exemplary configuration and the operation of the electron emission device of first example according to the present invention described.Next, with reference to Fig. 5 its manufacture method is described.

[0046] Fig. 5 A to Fig. 5 G is the schematic diagram of technology that the manufacturing electron emission device of first example according to the present invention is shown successively.

[0047] substrate 1 is to be used for the mechanically substrate of supporting device, and is to measure glass, quartz glass, soda-lime glass or the silicon that is reduced and the substrate made from impurity (for example Na).Substrate 1 not only can have high mechanical properties, but also can have the repellence to dry etching, wet etching, aqueous slkali and acid solution (for example liquid developer), as its necessary function.When adopting in integrated products (for example display panel), ideally, substrate has than film formation material or the littler thermal coefficient of expansion of other stack structure.Ideally, make substrate 1 by such material so that when heat-treating alkali element etc. less from glass inside to outdiffusion.

[0048] at first, on substrate 1, pile up first insulating barrier 3 and second insulating barrier 4 and the grid 5 that constitute insulating component 9, shown in Fig. 5 A.

[0049] first insulating barrier 3 is dielectric films made from the material with remarkable machinability; For example with SiN (Si _xN _y) or SiO ₂Make; And form by conventional vacuum film formation method (for example sputtering method, CVD method and vacuum vapor deposition method).Thickness is set in the scope of several nanometers to tens micron, and can select from tens nanometers to the scope of hundreds of nanometer.

[0050] similarly, second insulating barrier 4 also is the dielectric film made from the material with remarkable machinability; With SiN (Si _xN _y), SiO ₂Deng making; And form by conventional vacuum film formation method.Thickness is set at several nanometers to the scope of hundreds of nanometer, and can select from the scope of several nanometer to tens nanometers.

The etch quantity for the treatment of of [0051] first insulating barrier 3 is set to be different from the etch quantity for the treatment of of second insulating barrier 4, and this is because need form recess 7 after piling up first insulating barrier 3 and second insulating barrier 4.Selection ratio between first insulating barrier 3 and second insulating barrier 4 is set to 10 or bigger ideally, and more desirably is set to 50 or bigger.For example, SiN (Si _xN _y) can be used for first insulating barrier, 3, the second insulating barriers 4 and can comprise for example SiO ₂Insulating material, have high phosphorus concentration psg film, have the bsg film of high boron concentration etc.

[0052] grid 5 comprise two-layer, last conductive layer 5a and lower conductiving layer 5b, and form technology (for example CVD (Chemical Vapor Deposition) method and sputtering method) by the conventional vacuum film and form.Select to constitute the material of going up conductive layer 5a and lower conductiving layer 5b, so that the thermal coefficient of expansion of conductive layer 5b is bigger than the thermal coefficient of expansion of conductive layer 5a.In addition, these two kinds of material ideal ground all have high-termal conductivity and high-melting-point.The grid 5 that should be known in this example has the laminated construction that comprises two-layer (going up conductive layer 5a and lower conductiving layer 5b).Yet laminated construction can comprise two-layer at least, and can be by making last conductive layer 5a become multilayer with three layers or the more multi-layered total that forms.

[0053] selects to constitute the material that positions are approached the conductive layer 5b of projection 30 sides most from those materials with thermal coefficient of expansion bigger than other material coefficient of thermal expansion coefficient that constitutes conductive layer 5a etc.The material coefficient of thermal expansion coefficient that constitutes conductive layer 5b can be to constitute the twice of other material coefficient of thermal expansion coefficient of conductive layer 5a etc. or bigger.

[0054] is ready to use in the electric conducting material that constitutes

conductive layer

5a and 5b and can comprises metal (for example Be, Mg, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Au, Pt and Pd) and alloy material thereof.Electric conducting material to be used can also comprise carbide (for example TiC, ZrC, HfC, TaC, SiC and WC).Electric conducting material to be used can also comprise boride (HfB for example ₂, ZrB ₂, CeB ₆, YB ₄And GdB ₄), nitride (for example TiN, ZrN, HfN and TaN) and semiconductor (for example Si and Ge).Electric conducting material to be used can also comprise amorphous carbon, graphite, diamond-like-carbon equally, wherein be scattered with adamantine carbon and carbon compound.

[0055] thickness of whole grid 5 is set at several nanometers to the scope of hundreds of nanometer, and can select from tens nanometers to the scope of hundreds of nanometer.Consider the amount of bow of grid 5 when device is operated and the thickness of conductive layer 5a and lower conductiving layer 5b on suitably determining.

[0056] subsequently, on grid 5, form the resist pattern, handle grid 5, second insulating barrier 4 and first insulating barrier 3 successively by etching technique then, shown in Fig. 5 B with photoetching technique.

[0057] be RIE (reactive ion etching) technology for the method that this etch process adopted usually.Shine material by the plasma that forms with the conversion by etching gas, etch process can carry out accurately etching to material.When pending target member formed fluoride, this moment, etching gas to be selected was based on the gas (CF for example of fluorine ₄, CHF ₃And SF ₆).When target member forms chloride as Si and Al, select gas (Cl for example based on chlorine ₂And BCl ₃).In order to increase etching speed, when needs, just add the gas of hydrogen, oxygen, argon gas etc.In order to give above-mentioned layer, treat that etched face is level and smooth reliably ideally with respect to the selection ratio of resist.

[0058] in addition, make second insulating barrier 4 cave in by using etching technique, to form recess 7 therein, shown in Fig. 5 C.

[0059] for example, when second insulating barrier 4 be with SiO ₂During the material that forms, can (be called buffered hydrofluoric acid (buffered hydrofluoric acid by the mixed solution that uses ammonium fluoride (ammonium fluoride) and hydrofluoric acid (hydrofluoric acid), BHF)) coming second insulating barrier 4 is carried out etching, is with Si and work as second insulating barrier 4 _xN _yDuring the material that forms, can come second insulating barrier 4 is carried out etching by using thermal etching solution based on phosphoric acid.

[0060] degree of depth of recess 7 is relevant with the magnitude of the leakage current that flows after forming device.Usually, recess 7 forms deeply more, and the magnitude of leakage current is just more little.Yet because cross when dark when recess 7, go wrong (for example distortion of grid 5) is so that recess 7 forms approximate 30nm to 200nm is dark.

[0061] subsequently, peel ply (release layer) 15 is formed on the outer surface of grid 5, shown in Fig. 5 D.

[0062] purpose of formation peel ply 15 is, peels off the cathode material 6 that will be deposited on the grid 5 from grid 5 next step.For example by with grid 5 oxidations with form oxide-film thereon, method by metallide deposition techniques stripping metal etc. forms peel ply 15.

[0063] afterwards, cathode material 6 is deposited on the surface of the inner surface (end face of first insulating barrier 3) of outer surface (side wall surface), recess of grid 5, insulating component 9 (first insulating barrier 3) and substrate 1, shown in Fig. 5 E.Among cathode material 6, cathode material 6a ' formation negative electrode 6a, negative electrode 6a are deposited on the side wall surface of first insulating barrier 3 and the end face and on the surface of substrate 1.After this remove the cathode material 6b ' that has been deposited on the grid 5.

[0064] forms technology (for example CVD (Chemical Vapor Deposition) method and sputtering method) by the conventional vacuum film and come deposition cathode material 6.As mentioned above, in the present invention, by the control angle of vapour deposition and film formation time section, temperature and the level of vacuum during film forms during film forms, can form negative electrode, for the high efficiency extraction electronics so that the shape of the negative electrode 6a of grid 5 sides can be optimum.

[0065] cathode material 6 can be the material with conductivity and emission electric field, and can be usually have 2,000 ℃ or higher high-melting-point, have 5eV or littler work function and form chemical reaction layer (for example oxide) thereon hardly or can so that conversion zone easily from its material that removes.These materials for example comprise: metal (for example Hf, V, Nb, Ta, Mo, W, Au, Pt and Pd) or its alloy material; Carbide (for example TiC, ZrC, HfC, TaC, SiC and WC) and boride (HfB for example ₂, ZrB ₂, CeB ₆, YB ₄And GdB ₄).These materials also comprise: nitride (for example TiN, ZrN, HfN and TaN); And amorphous carbon, graphite, diamond-like-carbon, wherein be scattered with adamantine carbon and carbon compound.

[0066] subsequently, remove cathode material 6b ' on the grid 5 by remove peel ply 15 with etching technique, shown in Fig. 5 F.At last, device electrode 2 forms, and it is electrically connected to negative electrode 6a, and negative electrode 6a forms by being divided into the band shape as the cathode material 6a ' that continuous film deposits as required, shown in Fig. 5 G.

[0067] device electrode 2 has conductivity, and forms by normal film formation technology (for example CVD (Chemical Vapor Deposition) method and sputtering method) and photoetching technique.Material to be used can comprise: metal (for example Be, Mg, Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Cu, Ni, Cr, Au, Pt and Pd) or its alloy material; Carbide (for example TiC, ZrC, HfC, TaC, SiC and WC).Material to be used can also comprise: boride (HfB for example ₂, ZrB ₂, CeB ₆, YB ₄And GdB ₄), nitride (for example TiN, ZrN and HfN) and semiconductor (for example Si and Ge).Material to be used can also comprise amorphous carbon, graphite, diamond-like-carbon equally, wherein be scattered with adamantine carbon and carbon compound.In addition, the thickness of device electrode 2 is set at tens nanometers to several millimeters scope, and can select from tens nanometers to several microns scope.

[0068] in the above description, the exemplary process of the manufacturing electron emission device of first example has been described according to the present invention.The example of applicable application is described with reference to Fig. 6 subsequently.

[0069] can be by arranging that on substrate 61 a plurality of electron emission devices according to the present invention form electron source and imaging device.The example of arrangement comprises so-called simple matrix arrangement.Particularly by a plurality of electron emission devices being arranged as the matrix form of directions X and Y direction, and an electrode that will belong to capable device respectively is connected to the public wiring on the directions X, another electrode that will belong to the device of row is connected to the public wiring on the Y direction, and forms described arrangement.This state shown in Fig. 6.

[0070] in Fig. 6, distribution 62 on electron source substrate 61, the directions X and the distribution 63 on the Y direction are shown.Electron emission device 64 according to the embodiment of the invention also is shown.

[0071] distribution on the directions X 62 forms with the m bar line that distribution Dx1 and Dx2 are extended to Dxm, and can comprise by using conducting metal that vacuum vapor deposition method, printing method, sputtering method etc. form etc.Suitably design material, film thickness and the width of distribution.Distribution 63 on the Y direction forms with the n bar line that distribution Dy1 and Dy2 are extended to Dyn, and by with directions X on distribution 62 similar manner and form.At this, m and n are positive integers.In addition, each distribution is provided with outside terminal, and it is drawn out of the situation about being driven from the outside of being used for.

[0072] unshowned interlayer insulating film is provided between the n bar line of the m bar line of the distribution 62 on the directions X and the distribution 63 on the Y direction, and make this two classes line each other electricity separate.Unshowned interlayer insulating film comprises the SiO by using vacuum vapor deposition method, printing method, sputtering method etc. to form ₂Deng.Unshowned interlayer insulating film for example is formed on the whole surface or the part surface of electron source substrate 61 and goes up (electron source substrate 61 has the distribution 62 on the directions X that forms thereon) to form the shape of expectation; Film thickness, material and manufacture method suitably are set, thereby interlayer insulating film can especially be resisted the potential difference in the intersection point of the distribution 63 on distribution 62 and the Y direction on the directions X.

[0073] electrode (device electrode of describing among Figure 1A to Fig. 1 C 2 and grid 5) that constitutes electron emission device 64 is electrically connected to distribution 62 on the directions X and the distribution 63 on the Y direction respectively.

[0074] material that constitutes distribution 62 and distribution 63 can be made by formation element that partly is equal to or the formation element that is equal to fully, perhaps can constitute element by difference respectively and make.For example, suitably select described material from the above-mentioned material that is used for device electrode.

[0075] unshowned sweep signal applying unit is connected to the distribution 62 on the directions X.Imaging device is selected the row of the electron emission device 64 arranged on the directions X by sweep signal.On the other hand, unshowned modulation signal generation unit is connected to the distribution 63 on the Y direction.Imaging device is modulated each row electron emission device 64 of arranging in the Y direction according to the input signal of modulation signal.

[0076] to wait the being applied to sweep signal of device and the form of the differential voltage between the modulation signal provides the driving voltage in each electron emission device to be applied.In other words, imaging device drives each device by selecting directions X and Y direction simultaneously.

[0077] in addition, back plate 71 is fixed thereon with electron source substrate 61, and panel 76 has as the fluorescent film 74 that serves as the fluorophor of illuminated component, metal backing 75 etc., and they are formed on the inner surface of transparent glass substrate 73.

[0078] in addition, bracing frame 72 is connected to back plate 71 and panel 76 by frit etc.For example, peripheral device 77 (display panel) is configured to expect that by toasting glass reaches 10 minutes or longer bracing frame 72, back plate 71 and the panel 76 of sealing under 400 to 500 ℃ temperature range in atmosphere or nitrogen.It mainly is for 61 intensity at the bottom of the reinforcing line that back plate 71 is provided, and correspondingly, when substrate 61 self has sufficient intensity, can eliminate back plate 71.On the other hand, unshowned supporting member (being called distance piece) is installed between panel 76 and the back plate 71 equally once in a while, thereby can thus peripheral device 77 (display panel) be configured to the sufficient intensity with opposing atmospheric pressure.

[0079] consider the back on the plate 71 device array and the track of armed electronics, corresponding fluorophor (not shown) is disposed in the appropriate position in the fluorescent film 74 of panel 76.Nature, panel 76 self is suitably aimed at, and is fixed by back plate 71 then.

[0080] when display panel 77 was used for thereon display image (for example television image), unshowned drive circuit from outer side drive electron source was connected to terminal group Dx1 to Dxm, terminal group Dy1 to Dyn and high voltage terminal Hv.Drive circuit produces picture signal based on the display system (for example NTSC system) of expectation.Among picture signal, respectively, sweep signal is applied to terminal group Dx1 to Dxm, and modulation signal is applied to terminal group Dy1 to Dyn.Accelerating voltage is applied to high voltage terminal Hv.Purpose is that enough energy that will be used for the activating fluorescent body are treated from each device electrons emitted.

[0081] structure of imaging device described here is an example, can create various alter modes based on technical conceive of the present invention.For example, the display system of image can adopt the corresponding system with high-level TV (comprising the muse system except PAL system and SECAM-system).

[0082] in addition, except the display unit that is used for television broadcasting and the display unit that is used for video conference call system, computer etc., also can be used to treat as the imaging device by using the photo printer that photosensitive drums etc. makes up according to the imaging device of the embodiment of the invention etc.

Should be known in a broad sense that [0083] grid 5 expressions are electrically connected to all electrodes of the hot side of grid 5.Correspondingly, after a while the grid auxiliary layer 6b in the exemplary embodiment of describing 3 to 5 is also constituted the part of grid 5.Similarly, in a broad sense, negative electrode 6a represents all electrodes of low potential side, and it comprises negative electrode 6a and device electrode 2, and is electrically connected to negative electrode 6a and device electrode 2.

[0084] exemplary embodiment

[0085] now describes the present invention in detail in the concrete exemplary embodiment of following reference.

[0086] (exemplary embodiment 1)

[0087] with reference to the electron emission device of Figure 1A to Fig. 1 C description according to this exemplary embodiment, and existing with reference to the method for Fig. 5 A to Fig. 5 G description according to the manufacturing electron emission device of this exemplary embodiment.

[0088] substrate 1 purpose is mechanically supporting device, and in this exemplary embodiment, uses PD 200, and it is to be developed the low soda-lime glass that is used for plasma scope.

[0089] at first, on substrate 1, pile up first insulating barrier 3 and second insulating barrier 4 and the grid 5 of forming insulating component 9, shown in Fig. 5 A.

[0090] first insulating barrier 3 is films made from the insulating material with remarkable machinability.Form SiN (Si by sputtering method _xN _y) layer, and thickness is approximately 500nm.

[0091] second insulating barrier 4 is films made from the insulating material with similar remarkable machinability.Form SiO by sputtering method ₂Layer, and thickness is approximately 30nm.

[0092] subsequently, form grid 5.By sputtering method, form the film (8.8E of the Pt with 30nm thickness respectively ^-6The thermal coefficient of expansion of/K) be used for lower conductiving layer 5b, and the film (3.6E that forms the TaN with 30nm thickness ^-6The thermal coefficient of expansion of/K) is used for conductive layer 5a.

[0093] subsequently, on grid 5, form the resist pattern, then, handle grid 5, second insulating barrier 4 and first insulating barrier 3 successively by dry etch technique, shown in Fig. 5 B with photoetching technique.

[0094] in this exemplary embodiment,, thereby uses based on CF for the material of first insulating barrier 3 and second insulating barrier 4 and grid 5 selections formation fluoride ₄Processing gas.As by using described gas to make each layer stand the result of RIE technology, the side wall surface that is obtained after the etching of first insulating barrier 3, second insulating barrier 4 and grid 5 shows the angles with respect to approximate 80 degree in surface of substrate 1.

[0095] after having peeled off resist, make the side end face of second insulating barrier 4 cave in (withdrawal) by using BHF by means of etching technique, recess 7 forms the degree of depth of approximate 70nm in second insulating barrier 4, shown in Fig. 5 C.

[0096] subsequently, peel ply 15 is formed on the grid 5, shown in Fig. 5 D.By forming peel ply 15 by means of metallide technology electro-deposition Ni on the grid 5 of TaN.

[0097] then, the molybdenum of cathode material 6 (Mo) is formed on the device, shown in Fig. 5 E.Label 6b ' expression has been deposited on the cathode material 6 on the grid 5, label 6a ' expression be deposited on from the outside of insulating barrier 3 to recess inner surface and from the outer surface of insulating barrier 3 to the zone on the surface of substrate 1 on cathode material 6.

[0098] in this exemplary embodiment, adopt the EB CVD (Chemical Vapor Deposition) method to form method as film.In addition, in this formation method, with respect to the horizontal plane 60 the degree angles and substrate 1 is set in device.Thus, Mo spends in the incident of the top of grid 5 with approximate 60, and with the incident on the inclined side wall of first insulating barrier 3 that has experienced the RIE processing of approximate 40 degree.The vapour deposition operation is performed by the fixedly deposition velocity of approximate 12nm/min and reaches approximate 2.5 minutes.By the accurate control vapour deposition time period, the film of Mo is formed in the thickness that has 30nm on the outer surface of first insulating barrier 3.

[0099] after forming the Mo film, the etchant that comprises iodine and KI by use removes the peel ply 15 of the Ni of deposition on grid 5, peels off cathode material 6b ' from grid 5, shown in Fig. 5 F.

[00100] after above-mentioned strip operation, goes up the resist pattern that formation has 100 μ m width at cathode material 6a ' by photoetching technique.Subsequently, handle cathode material 6a ' and remove unnecessary resist by dry etch technique and form negative electrode 6a.The processing gas that use this moment is based on CF ₄Gas, thereby be suitable for the molybdenum of cathode material 6.

[00101] last, form device electrode 2, shown in Fig. 5 G.Material is copper (Cu), and electrode forms by sputtering method.The thickness of electrode is approximately 500nm.

[00102] after forming device, by using power supply shown in Figure 2 to arrange to assess the characteristic of this structure by said method.

[00103] in Fig. 2, driving voltage Vf is applied between grid 5 that becomes hot side and the negative electrode 6a that becomes low potential side, this moment, device current If flowed, voltage Va is applied in anode 20 and between the negative electrode 6a of low potential side and the device electrode 2, and electron emission current Ie flows between them.

[00104] as the result of characteristic of this structure of assessment, the mean value that obtains driving voltage Vf and be 26V, electron emission current Ie mean value and be 1.5 μ A, efficiency eta is 17% device.In device according to the present invention, the distance in gap (d) (see figure 4) is adjusted automatically according to the degree of heat to be produced, thereby compares the operation stably of the long-time section of this device with traditional devices.In addition, this device makes the jut of negative electrode become to be embedded in the electron emission part in the recess (depression), and makes jut contact with the inner surface of recess, has strengthened heat and mechanical stability thus.As a result, obtained to show little Ie undulate quantity (amount of minimizing) even and the suitable electron emission device of when being driven continuously, also stably operating.

[00105] in addition, as the result who observes the cross section of the cathode portion in the device by TEM, cathode portion shows shape shown in Figure 7.Result as extract the value of each parameter from the TEM image in cross section is worth as follows: θ a=75 °, and θ b=80 °, X=35nm, h=29nm, δ=11nm and d=9nm.

[00106] (exemplary embodiment 2)

[00107] Fig. 8 A to Fig. 8 C is the schematic diagram of the electron emission device of second example according to the present invention.Fig. 8 A is a top plan view, and Fig. 8 B is the sectional view that the line 8B-8B along Fig. 8 A obtains, and Fig. 8 C is the end view from the device of Fig. 8 A that watches towards the direction of 8B from 8B.Now with reference to the electron emission device of Fig. 8 A to Fig. 8 B description according to this exemplary embodiment.

[00108] in Fig. 8 A to Fig. 8 C, first insulating barrier 3 and second insulating barrier 4 that substrate 1, electrode (device electrode) 2 are shown and constitute insulating component 9.Grid 5 comprises two-layer (going up conductive layer 5a and lower conductiving layer 5b).In addition, a plurality of negative electrode 6a that all have a band shape are formed on the outer surface (side wall surface) of insulating component 9 of first insulating barrier 3.Negative electrode 6a forms with electric conducting material, and is electrically connected to device electrode 2.Recess 7 is such zones, and in this zone, the side wall surface of second insulating barrier 4 withdrawal in the insulating component 9 is caved in thereby compare towards the inboard with the side wall surface of the front end face of grid 5 and first insulating barrier 3.Gap 8 also is shown, in gap 8, forms the required electric field of electronics emission.Gap 8 is extremely narrow, and it is normally uniform to be formed in (in other words, among Fig. 8 C on from left to right the direction) in a lateral direction of device.

[00109] similar in basic manufacture method and the exemplary embodiment 1, thus now will be in the following difference of only describing with reference to Fig. 5 between these two kinds of methods.

[00110] in this exemplary embodiment, is deposited on peel ply and the insulating component by the molybdenum (Mo) of EB CVD (Chemical Vapor Deposition) method with cathode material 6.The inclination angle of substrate 1 is set to 80 degree during film forms.Thus, Mo spends in the incident of the top of grid 5 with approximate 80, and with the incident on the inclined side wall of first insulating barrier 3 that has experienced the RIE processing of approximate 20 degree.The vapour deposition operation is performed by the fixedly deposition velocity of approximate 10nm/min and reaches approximate 2 minutes.By the accurate control vapour deposition time period, the film of Mo is formed in the thickness that has 20nm on the inclined side wall of first insulating barrier 3 (outer surface of insulating component 9).

[00111] after forming the Mo film, the etchant that comprises iodine and KI by use removes the peel ply 15 of the Ni of deposition on grid 5, peels off cathode material 6b ' from grid 5.

[00112] after above-mentioned strip operation, by photoetching technique, the resist pattern with 3 μ m line widths and interval width is formed on the cathode material 6a ' on the sidewall surfaces that is deposited on first insulating barrier 3.

[00113] subsequently, divide and handle cathode material 6a ' and remove unnecessary resist, form a plurality of negative electrode 6a by dry etch technique.The processing gas that use this moment is based on the gas of CF4, thereby is suitable for the molybdenum of cathode material 6.

[00114] as the result by the tem analysis cross section, the mean value of Fig. 8 B intermediate gap 8 (beeline between negative electrode 6a and the grid 5) is 8.5nm.

[00115] form by said method have the device of a plurality of negative electrode 6a after, by using power supply shown in Figure 2 to arrange to assess the characteristic of electron source.

[00116] as the result of characteristic of this structure of assessment, the mean value that obtains driving voltage Vf and be 26V, electron emission current Ie mean value and be 6.2 μ A, efficiency eta is 17% device.Consider according to this specific character, suppose that electron emission current only increases the value corresponding to the quantity of band as the result who negative electrode 6a is divided into a plurality of band shapes.

[00117] with similar manufacturing process prepare quantitatively be increased to before the device of 100 times band of device with 0.5 μ m line width and interval width.Then, device was similar to 100 times electron emission amount before this device exhibits went out.

[00118] electron emission device that therefore has a negative electrode 6a of a plurality of band shapes shows the advantage identical with exemplary embodiment 1, and can reduce the variation of electron emission characteristic among the electron emission device simultaneously.

[00119] (exemplary embodiment 3)

[00120] Fig. 9 A to Fig. 9 C is the schematic diagram of the electron emission device of the 3rd example according to the present invention.Fig. 9 A is a top plan view, and Fig. 9 B is the sectional view that the line 9B-9B along Fig. 9 A obtains, and Fig. 9 C is the end view from the device of Fig. 9 A that watches towards the direction of 9B from 9B.Now with reference to the electron emission device of Fig. 9 A to Fig. 9 C description according to this exemplary embodiment.

[00121] in Fig. 9 A to Fig. 9 C, first insulating barrier 3 and second insulating barrier 4 that substrate 1, electrode (device electrode) 2 are shown and constitute insulating component 9.Grid 5 comprises two-layer (going up conductive layer 5a and lower conductiving layer 5b).In addition, negative electrode 6a is formed on the inner surface (end face of first insulating barrier 3) of the outer surface (side wall surface) of first insulating barrier 3 and recess.Negative electrode 6a forms with electric conducting material, and is electrically connected to device electrode 2.

[00122] on the other hand, grid auxiliary layer 6b constitutes the part of grid 5, and is formed on end face from grid 5 to the zone of the front end face (side wall surface) of grid 5.Grid auxiliary layer 6b forms with the electric conducting material identical with the negative electrode 6a that is in low potential side, and is electrically connected to grid 5.

[00123] recess 7 is such zones, in this zone, and the withdrawal of the side wall surface of second insulating barrier 4 on the outer surface of insulating component 9 (side wall surface), thus compare towards inner recess with the front end face of grid 5 and the side wall surface of first insulating barrier 3.Gap 8 also is shown, in gap 8, forms the required electric field of electronics emission.Gap 8 is extremely narrow, and forms (in other words, among Fig. 9 C on from left to right the direction) in a lateral direction of device normally uniform.Figure 10 illustrates the perspective view of entire device.

[00124] subsequently, a example according to the method for the manufacturing electron emission device of the embodiment of the invention now will be described.Figure 11 A to Figure 11 E is the schematic diagram that illustrates successively according to the technology of the manufacturing electron emission device of the embodiment of the invention.

[00125] purpose of substrate 1 is mechanically supporting device, and in this exemplary embodiment, uses PD 200, and it is to be developed the low soda-lime glass that is used for plasma scope.

[00126] at first, on substrate 1, pile up first insulating barrier 3 and second insulating barrier 4 and the grid 5 of forming insulating component 9, shown in Figure 11 A.

[00127] first insulating barrier 3 is films made from the insulating material with remarkable machinability.Form SiN (Si by sputtering method _xN _y) layer, and thickness is approximately 500nm.

[00128] second insulating barrier 4 is films made from the insulating material with similar remarkable machinability.Come with SiO by sputtering method ₂Form this layer, and thickness is approximately 40nm.

[00129] grid 5 has double-layer structure.Respectively, by sputtering method, the film that forms the Pt with 30nm thickness is used for lower conductiving layer 5b, and the film that forms the TaN with 30nm thickness is used for conductive layer 5a.

[00130] after these layers are piled up, on grid 5, forms the resist pattern by photoetching technique, shown in Figure 11 B.Then, handle grid 5, second insulating barrier 4 and first insulating barrier 3 successively by dry etch technique.

[00131] in this exemplary embodiment,, thereby uses based on CF for the material of first insulating barrier 3 and second insulating barrier 4 and grid 5 selections formation fluoride ₄Processing gas.As by using described gas to make each layer stand the result of RIE technology, the side wall surface that is obtained after etching of first insulating barrier 3, second insulating barrier 4 and grid 5 shows the angles with respect to approximate 80 degree in surface of substrate 1.

[00132] after peeling off resist, by making the side end face of second insulating barrier 4 cave in (withdrawal) with BHF by etching technique, recess 7 forms the degree of depth of approximate 100nm in second insulating barrier 4, shown in Figure 11 C.

[00133] in this exemplary embodiment, the molybdenum of cathode material 6 (Mo) is deposited on the grid 5 equally, as 6b ' expression among Figure 11 D.The EB CVD (Chemical Vapor Deposition) method is as film formation method.

[00134] in this formation method, the angle of substrate 1 is set to 60 degree.Thus, Mo is incident on the top of grid 5 with 60 degree, and is incident on 40 degree on the inclined side wall of first insulating barrier 3 that experiences the RIE processing.The vapour deposition operation is performed by the fixedly deposition velocity of approximate 10nm/min and reaches approximate 4 minutes.At this moment, by the accurate control vapour deposition time period, the film of Mo is formed in the thickness that has 40nm on the side wall surface (outer surface of insulating component 9) of first insulating barrier 3.The thermal coefficient of expansion that should be known in molybdenum is 5.1E ^-6/ K.

[00135] subsequently, by using photoetching technique, at the side wall surface of crossing over first insulating barrier 3 and end face (inner surface of recess) and cross over the side of insulating barrier 3 and the cathode material 6b ' of the cathode material 6a ' of substrate 1 and grid 5 goes up and forms the resist pattern with 600 μ m width.Subsequently, handle two films of cathode material 6a ' and 6b ' and remove unnecessary resist, form negative electrode 6a that is in low potential side and the grid auxiliary layer 6b that constitutes the part of the grid 5 that is in hot side by dry etch technique.The processing gas that use this moment is based on CF ₄Gas, thereby be suitable for the molybdenum of cathode material 6.

[00136] as the result by the tem analysis cross section, the gap 8 among Fig. 9 B is 15nm.

[00137] subsequently, form device electrode 2, shown in Figure 11 E.Material is copper (Cu), and forms the use sputtering method for film.Thickness is approximately 500nm.

[00138] form by said method have the electron emission device of grid auxiliary layer 6b after, by using power supply shown in Figure 2 to arrange to assess the characteristic of this electron source.

[00139] as the result of characteristic of this structure of assessment, the mean value that obtains driving voltage Vf and be 35V, electron emission current Ie mean value and be 1.5 μ A, efficiency eta is 14% device.Acquisition has high efficiency electron emission device with the grid auxiliary layer 6b (with the length on the T2 equidirectional among Figure 12, after a while with described) of negative electrode 6a same widths by therefore having.

[00140] (exemplary embodiment 4)

[00141] Figure 12 A to Figure 12 C is the schematic diagram of the electron emission device of the 4th example according to the present invention.Figure 12 A is a top plan view, and Figure 12 B is the sectional view that the line 12B-12B along Figure 12 A obtains, and Figure 12 C is the end view from the device of Figure 12 A that watches towards the direction of 12B from 12B.Now with reference to the electron emission device of Figure 12 A to Figure 12 C description according to this exemplary embodiment.

[00142] in Figure 12 A to Figure 12 C, first insulating barrier 3 and second insulating barrier 4 that substrate 1, electrode (device electrode) 2 are shown and constitute insulating component 9.Grid 5 comprises two-layer (going up conductive layer 5a and lower conductiving layer 5b).In addition, a plurality of negative electrode 6a that all have a band shape are formed on the side wall surface of first insulating barrier 3.Negative electrode 6a makes with electric conducting material, and is electrically connected with device electrode 2.On the other hand, grid auxiliary layer 6b constitutes the part of grid 5, and is formed on end face from grid 5 to the zone of the front end face (side wall surface) of grid 5, thereby is in line with negative electrode 6a and arranges.A plurality of layers are formed.Grid auxiliary layer 6b forms with the electric conducting material identical with negative electrode 6a, and is electrically connected to grid 5.

[00143] side wall surface by withdrawal second insulating barrier 4 in the side wall surface of insulating component 9 forms recess 7, thereby compares with the front end face of grid 5 and the side wall surface of first insulating barrier 3, makes described side wall surface towards inner recess.Gap 8 also is shown, in gap 8, forms the required electric field of electronics emission.Gap 8 is extremely narrow, and forms (in other words, among Figure 12 C on from left to right the direction) in a lateral direction of device normally uniform.

[00144] similar in basic manufacture method and the exemplary embodiment 3, thus now will be in the following difference of only describing with reference to Figure 11 between these two kinds of methods.

[00145] in this exemplary embodiment, is deposited on the grid 5 by the molybdenum (Mo) of sputter CVD (Chemical Vapor Deposition) method with cathode material 6.To be set to respect to sputtering target be level to the angle of substrate 1 in film forms.Level of vacuum with 0.1Pa produces argon plasma, thereby the particle after the sputter is with limited angle incident on the surface of substrate 1, and substrate 1 is set, thereby the distance between substrate 1 and the Mo target can be 60nm or littler (mean free path of the argon ion of 0.1Pa).The vapour deposition operation is performed by the fixedly deposition rate that is similar to 10nm/min and reaches approximate 2 minutes, goes up the thickness that the film of Mo is formed 20nm with the side wall surface (outer surface of insulating component 9) at first insulating barrier 3.At this moment, film is formed, thereby the amount of the cathode material 6 that forms simultaneously in recess 7 can be 40nm.

[00146] after forming the molybdenum film, on cathode material 6a ' and 6b ', forms the line width with 3 μ m and the resist pattern of interval width by photoetching technique.Subsequently, handle two films of cathode material 6a ' and 6b ' and remove unnecessary resist, form the grid auxiliary layer 6b of the part of negative electrode 6a and formation grid 5 by dry etch technique.The processing gas that use this moment is based on CF ₄Gas, thereby be suitable for the molybdenum of cathode material 6.

[00147] electrode width T1 and the T2 of negative electrode 6a that is obtained shown in survey map 12A and Figure 12 C and grid auxiliary layer 6b.As a result, the electrode width T2 of grid auxiliary layer 6b is than the narrow approximate 10nm to 30nm of electrode width T1 of the negative electrode 6a that is in low potential side.

[00148] as the result by the tem analysis cross section, the mean value in the gap 8 between negative electrode 6a and the grid 5 among Figure 12 B (grid auxiliary layer 6b) is 8.5nm.

[00149] this exemplary embodiment also shows the advantage similar to exemplary embodiment 2.In addition, can wherein also provide a plurality of described negative electrode 6a by a plurality of grid auxiliary layer 6b being provided and width (T2) be set to become width (T1) less than negative electrode 6a being formed and has more high efficiency electron beam source on grid 5.

[00150] in addition, by using each electron emission device in exemplary embodiment 2 described above and the exemplary embodiment 4 to prepare above-mentioned image display device.Therefore as a result, the display unit of remarkable formability can be provided, the display unit of the image of abundant demonstration can be realized showing with electron beam.

[00151] though described the present invention, should be understood that to the invention is not restricted to disclosed exemplary embodiment with reference to exemplary embodiment.The scope of claims is consistent with the wideest explanation, thereby comprises modification and equivalent structure and function that all are such.

Claims

1. electron beam device comprises:

Insulating component, it has recess on the surface of described insulating component;

Negative electrode, it has the projection of extending on the inner surface of the outer surface of described insulating component and described recess;

Grid, it is disposed on the outer surface of described insulating component, and described grid is in the face of described projection; And

Anode, it faces described projection via described grid,

Wherein, described grid comprises the laminated construction with at least two conductive layers, and is disposed in the described conductive layer in the face of the thermal coefficient of expansion of the conductive layer at the part place of the described projection thermal coefficient of expansion greater than the remaining conductive layer in the described conductive layer.

2. electron beam device according to claim 1, wherein, the material of the remaining conductive layer in the described conductive layer is identical with the material of described negative electrode.

3. electron beam device according to claim 1 comprises: a plurality of negative electrodes.

4. an image display device comprises: at least one electron beam device according to claim 1; And at least one is disposed in the light emission member on the described anode.