CN101671813B - Ti膜的成膜方法 - Google Patents

Ti膜的成膜方法 Download PDF

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Publication number
CN101671813B
CN101671813B CN2009101733117A CN200910173311A CN101671813B CN 101671813 B CN101671813 B CN 101671813B CN 2009101733117 A CN2009101733117 A CN 2009101733117A CN 200910173311 A CN200910173311 A CN 200910173311A CN 101671813 B CN101671813 B CN 101671813B
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CN
China
Prior art keywords
film
gas
forming
temperature
coating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009101733117A
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English (en)
Chinese (zh)
Other versions
CN101671813A (zh
Inventor
天野文贵
善光哲
成嶋健索
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
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Publication of CN101671813A publication Critical patent/CN101671813A/zh
Application granted granted Critical
Publication of CN101671813B publication Critical patent/CN101671813B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2009101733117A 2008-09-12 2009-09-02 Ti膜的成膜方法 Expired - Fee Related CN101671813B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008235284A JP2010065309A (ja) 2008-09-12 2008-09-12 Ｔｉ系膜の成膜方法および記憶媒体
JP2008-235284 2008-09-12
JP2008235284 2008-09-12

Publications (2)

Publication Number Publication Date
CN101671813A CN101671813A (zh) 2010-03-17
CN101671813B true CN101671813B (zh) 2012-02-08

Family

ID=42019225

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101733117A Expired - Fee Related CN101671813B (zh) 2008-09-12 2009-09-02 Ti膜的成膜方法

Country Status (3)

Country Link
JP (1) JP2010065309A (ja)
KR (1) KR20100031460A (ja)
CN (1) CN101671813B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5698043B2 (ja) * 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー 半導体製造装置
JP5690219B2 (ja) * 2011-06-03 2015-03-25 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP6219179B2 (ja) * 2014-01-20 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
JP5897617B2 (ja) * 2014-01-31 2016-03-30 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP6597740B2 (ja) 2017-08-30 2019-10-30 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6917315B2 (ja) 2018-01-15 2021-08-11 東京エレクトロン株式会社 プリコート方法及び成膜方法
JP2021038452A (ja) 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5140957B2 (ja) * 2005-12-27 2013-02-13 東京エレクトロン株式会社 成膜装置
JP5208756B2 (ja) * 2006-10-19 2013-06-12 東京エレクトロン株式会社 Ｔｉ系膜の成膜方法および記憶媒体

Also Published As

Publication number Publication date
KR20100031460A (ko) 2010-03-22
CN101671813A (zh) 2010-03-17
JP2010065309A (ja) 2010-03-25

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120208

Termination date: 20130902