CN101655883B - Schottky parameter extracting method for GaN HEMT element - Google Patents
Schottky parameter extracting method for GaN HEMT element Download PDFInfo
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Abstract
The present invention relates to a kind of Schottky parameter extracting methods of GaN HEMT device, belong to technical field of semiconductor device. It the described method comprises the following steps: analyzing the corresponding physical process of third section curve in the Schottky forward I-V characteristic curves,The third section curve has corresponded to voltage and has all been applied to the physical process for generating electric current in the first diode,Voltage is no longer applied on second diode at this time,The third section curve includes one section of linear zone; Linear fit is carried out to the third section curve and obtains the straight line that slope is k3,According to the slope k 3 of the straight line,Find out the Schottky contacts of first diode ideal factor n1 and practical barrier height
. Parameter extracting method of the invention is that recessed new phenomenon occur for Schottky forward I-V characteristic curves after GaN HEMT device high temperature storage and propose, the parameter value and actual value extracted using the method coincide substantially.
Description
Technical field
The present invention relates to a kind of Schottky parameter extracting method, relate in particular to a kind of ginseng method of putting forward that proposes at the low-pressure area recessed new phenomenon of appearance at GaN HEMT device Schottky forward I-V family curve, belong to technical field of semiconductor device.
Background technology
When development GaN HEMT, in order to obtain very high mutual conductance, the making quality of the Schottky junction structure that grid and semiconductor GaN form is very crucial, and the accurate extraction of Schottky electrical parameter all has significance to device modeling, reliability evaluation etc., especially when carrying out the contrast of failtests data, accurate measurement is particularly important for result's influence.
General I-V standard law is mainly concerned with two sections curves during to Schottky characteristic curve extracting parameter, and the zone that these two sections curves surround is respectively low pressure linear zone and high-tension resistive district.Yet, after device being carried out the high temperature storage assessment, find that Schottky forward I-V family curve has not been original typical curve, but tangible recessed or saturated phenomenon occurred at linearity range, promptly described Schottky forward I-V family curve has become four sections curves.This has caused obstacle to Parameter Extraction, makes original I-V standard law not be suitable for this type of curve.
Summary of the invention
The present invention is directed to GaN HEMT device after carrying out the high temperature storage assessment, its Schottky forward I-V family curve has not been original typical curve, but at linearity range significantly recessed or saturated phenomenon appears, this has caused obstacle to Parameter Extraction, make original I-V standard law not be suitable for the deficiency of this type of curve, a kind of parameter extracting method of GaN HEMT device is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of Schottky parameter extracting method of GaN HEMT device, the equivalent-circuit model of described GaN HEMT device is to be in series by first diode of back-to-back formula and second diode, described first diode is the schottky diode between metal and the AlGaN, and described second diode is the equivalent diode on the AlGaN/GaN heterojunction boundary; The Schottky forward I-V family curve of described GaN HEMT device is made up of first section curve C linking to each other successively 1, second section curve C 2, the 3rd section curve C 3 and the 4th section curve C 4, is the boundary with the flex point between described four sections curves, and it may further comprise the steps:
Step a: analyze the 3rd section curve C 3 corresponding physical processes in the described Schottky forward I-V family curve, described the 3rd section curve C 3 correspondences voltage all be applied on described first diode physical process that produces electric current, this moment, voltage no longer was applied on described second diode, described the 3rd section curve C 3 comprises one section linear zone, and described linear zone is between the flex point between the point on the curve of the cut-in voltage correspondence of described GaN HEMT device and described second section curve C 2 and the 3rd section curve C 3;
Step b: described the 3rd section curve C 3 carried out linear fit obtain straight line F3, its slope is k
3, according to the slope k of described straight line F3
3Obtain the ideal factor n of the Schottky contacts of described first diode
1With actual barrier height
Further, obtain the actual barrier height of the Schottky contacts of described first diode among the described step b
Step specifically comprise:
Step b1: utilize formula
Obtain the outward appearance barrier height of the Schottky contacts of described first diode
Wherein, k is a Boltzmann constant, and T is a kelvin degree, A
*Be the Li Chaxun constant, A is the grid area of section, I
Gs0Intersection point for straight line F3 and Y-axis;
Step b2: described first section curve C 1 and second section curve C 2 are carried out linear fit obtain straight line F1 and straight line F2 respectively, utilize intersection point O and the described intersection point O of described straight line F2 and straight line F3 to arrive the projection line of Y-axis and the intersection point O ' of straight line F1, obtain the difference between the horizontal ordinate of the horizontal ordinate of described intersection point O and intersection point O ', be the bias voltage V that is applied on described second diode
2
Step b3:, utilize the bias voltage V that is applied on described second diode in conjunction with the relation of electric current and voltage in the described Schottky forward I-V family curve
2, right
Revise, obtain the actual barrier height of the Schottky contacts of described first diode
Further, obtain the actual barrier height of the Schottky contacts of described first diode among the described step b
Step be specially: described straight line F3 is moved to low-pressure area, and, utilizes formula through the current point of 0.1V correspondence
Obtain the actual barrier height of the Schottky contacts of described first diode
Wherein, k is a Boltzmann constant, and T is a kelvin degree, A
*Be the Li Chaxun constant, A is the grid area of section, I
Gs0' move to behind the low-pressure area intersection point with Y-axis for straight line F3.
The invention has the beneficial effects as follows: parameter extracting method of the present invention is applicable to that the GaN HEMT device of recessed phenomenon appears in Schottky forward I-V family curve after the high temperature storage at low-pressure area, and this moment traditional I-V standard put forward the ginseng method can not be suitable fully, it is identical substantially that parameter value generation that using said method is extracted is returned the data and the measured data that obtain behind the model.
Description of drawings
Fig. 1 is the process flow diagram of the Schottky parameter extracting method of embodiment of the invention GaN HEMT device;
Fig. 2 is the Schottky forward I-V family curve synoptic diagram of embodiment of the invention GaN HEMT device;
Fig. 3 can be with synoptic diagram for two back-to-back formula diodes in the embodiment of the invention GaN HEMT device;
Fig. 4 is the process flow diagram of the Schottky parameter extracting method of the embodiment of the invention one GaN HEMT device;
Fig. 5 is the process flow diagram of the Schottky parameter extracting method of the embodiment of the invention two GaN HEMT devices;
Fig. 6 is the Schottky forward I-V family curve actual measured value of embodiment of the invention GaN HEMT device and the contrast synoptic diagram of match value.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Fig. 1 is the process flow diagram of the Schottky parameter extracting method of embodiment of the invention GaN HEMT device.As shown in Figure 1, described parameter extracting method is to carry out the Schottky parameter extraction at Schottky forward I-V family curve after the high temperature storage at the low-pressure area GaN HEMT device that to be voltage recessed phenomenon occurs less than the zone of cut-in voltage, and it may further comprise the steps:
Step 11: the 3rd section curve C 3 corresponding physical processes in the Schottky forward I-V family curve of analysis GaN HEMT device, described the 3rd section curve C 3 correspondences voltage all be applied on described first diode physical process that produces electric current, this moment, voltage no longer was applied on described second diode, described the 3rd section curve C 3 comprises one section linear zone, and described linear zone is between the flex point between the point on the curve of the cut-in voltage correspondence of described GaN HEMT device and described second section curve C 2 and the 3rd section curve C 3.
Fig. 2 is the Schottky forward I-V family curve synoptic diagram of embodiment of the invention GaN HEMT device.As shown in Figure 2, described Schottky forward I-V family curve is made up of first section curve C linking to each other successively 1, second section curve C 2, the 3rd section curve C 3 and the 4th section curve C 4, the separation of described four sections curves is the characteristic flex point of whole Schottky forward I-V, Schottky forward I-V family curve in the diagram has three flex points, so it can be divided into four sections curves.In this step, the method of analyzing described each section curve physical process is: Fig. 3 can be with synoptic diagram for two back-to-back formula diodes in the embodiment of the invention GaN HEMT device, can analyze in conjunction with band theory, variation along with Vg, the relative position of Fermi level and conduction band can change, can judge the concrete influence that Vg can be with two diodes according to this variation, thereby analyze the physical process of each section curve.As shown in Figure 3, the equivalent-circuit model of described GaN HEMT device is to be in series by first diode of back-to-back formula and second diode, described first diode is the schottky diode between metal and the AlGaN, described second diode is the equivalent diode on the AlGaN/GaN heterojunction boundary, have quantity very large electronics on the AlGaN/GaN heterojunction boundary this moment, be two-dimensional electron gas, be equivalent to sheet metal, play electric action.When forward voltage is added on the metal, and two-dimensional electron gas is a ground connection, and metal/the AlGaN schottky diode is under the forward bias, and second diode on the heterojunction boundary is to be under the reverse biased.When forward bias when not being very big, most impressed voltage V
1Fall in metal/AlGaN contact, i.e. (corresponding to first section curve C 1) on first diode; When forward bias became big, second diode on heterojunction boundary under the big forward bias became leading role (corresponding to second section curve C 2).Under big forward bias, the voltage difference V of curve off-straight
2Second diode by heterojunction boundary is born, and this moment, this second diode was a reverse biased.
When voltage arrives voltage V*, wherein voltage V* is described straight line F2 and straight line F3 intersection point horizontal ordinate corresponding voltage value, in the GaN body Fermi level near or equal the potential barrier peak value of second diode, potential barrier does not have barrier effect, electric current can pass through second diode, the voltage V of Zeng Jiaing more smoothly
3Just can not be applied on second diode, but all be added on first diode, so the zone of described the 3rd section curve C 3 correspondences is the real reactions to the first schottky diode I-V characteristic, described the 3rd section curve C 3 comprises one section linear zone, described linear zone is positioned between the point and the flex point between described second section curve (C2) and the 3rd section curve (C3) on the curve of cut-in voltage correspondence of described GaN HEMT device, can obtain the ideal factor n of first diode by this linear zone
1With the outward appearance barrier height
Step 12: described the 3rd section curve C 3 carried out linear fit obtain straight line F3, its slope is k
3, according to the slope k of described straight line F3
3Obtain the ideal factor n of the Schottky contacts of described first diode
1With actual barrier height
Described the 3rd section curve C 3 carried out obtaining straight line F3 behind the linear fit, and its slope is k
3, utilize
Can get n
1, wherein, q is an electron charge, and k is a Boltzmann constant, and T is a kelvin degree.
Embodiment one
Fig. 4 is the process flow diagram of the Schottky parameter extracting method of the embodiment of the invention one GaN HEMT device.As shown in Figure 4, said method comprising the steps of:
Step 201: analyze the first section curve C 1 in the Schottky forward I-V family curve of GaN HEMT device, second section curve C 2 and the 3rd section curve C 3 corresponding physical processes.
Step 202: described the 3rd section curve C 3 carried out linear fit obtain straight line F3, its slope is k
3, according to the slope k of described straight line F3
3Obtain the ideal factor n of the Schottky contacts of described first diode
1With the outward appearance barrier height
Described the 3rd section curve C 3 carried out obtaining straight line F3 behind the linear fit, and its slope is k
3, utilize
Can get n
1And
Can pass through
Try to achieve, wherein I
Gs0Intersection point for straight line F3 and Y-axis.Should
Be not actual barrier height, it has comprised the influence of the second diode pair curve, must obtain actual barrier height by correction.
Step 203: described first section curve C 1 and second section curve C 2 are carried out linear fit obtain straight line F1 and straight line F2 respectively, utilize the position relation of described straight line F1 and straight line F2 to obtain the bias voltage V that is applied on described second diode
2
Described first section curve C 1 carried out obtaining straight line F1 behind the linear fit, described second section curve C 2 carried out linear fit obtain straight line F2, described straight line F2 is that second diode begins active zone after the current limliting, the intersection point of itself and straight line F3 is O, described intersection point 0 is O ' to the projection line of Y-axis and the intersection point of straight line F1, and the difference between the horizontal ordinate of the horizontal ordinate of described intersection point O and intersection point O ' is the bias voltage V that is applied on described second diode
2, promptly
Step 204:, right in conjunction with the relation of electric current and voltage in the described Schottky forward I-V family curve
Revise, obtain the actual barrier height of the Schottky contacts of described first diode
The electric current of described first diode can be expressed as
I
gs＝I
s1[exp(qV
1/n
1kT)-1]…(1)，
The electric current of described second diode can be expressed as
I
gs＝I
s2[exp(qV
2/n
2kT)-1]…(2)，
Gate source voltage is expressed as
V
Gs=V
1+ V
2Ten I
Gs* R
s(3),
Wherein, I
S1Be the i.e. saturation current of first diode of first schottky diode, I
S2Be the i.e. saturation current of second diode of second schottky diode, n
1Be the ideal factor of first schottky diode, n
2Be the ideal factor of second schottky diode, R
sBe grid resistance in series, A
*Be the Li Chaxun constant, A is the grid area of section, and T is a kelvin degree, and k is a Boltzmann constant, and q is an electron charge,
Be the barrier height of described first diode when the thermal equilibrium,
Be the barrier height of described second diode when the thermal equilibrium.
As shown in Figure 1, (corresponding to the 3rd section curve C 3 among Fig. 2) can be derived by formula (1)～(5) after electric current sharply rises, and the I-V relation on described first diode can be expressed as again
If V
Gs-V
2〉=3n
1KT ... (7), can derive following formula:
The n of this moment
1Be the ideal factor of described straight line F3 correspondence, I
Gs0Be the intersection point of described straight line F3 and Y-axis,
Be the actual potential barrier of described first diode, the described second diode voltage V
2Be to try to achieve with the model of Chen.
Embodiment two
Fig. 5 is the process flow diagram of the Schottky parameter extracting method of the embodiment of the invention two GaN HEMT devices.As shown in Figure 5, said method comprising the steps of:
Step 301: the 3rd section curve C 3 corresponding physical processes in the Schottky forward I-V family curve of analysis GaN HEMT device.
Described the 3rd section curve C 3 correspondences voltage all be applied on described first diode physical process that produces electric current, this moment, voltage no longer was applied on described second diode, described the 3rd section curve C 3 comprises one section linear zone, and described linear zone is between the flex point between the point on the curve of the cut-in voltage correspondence of described GaN HEMT device and described second section curve C 2 and the 3rd section curve C 3.
Step 302: described the 3rd section curve C 3 carried out linear fit obtain straight line F3, its slope is k
3, according to the slope k of described straight line F3
3Obtain the ideal factor n of the Schottky contacts of described first diode
1, F3 moves to low-pressure area with straight line, and the current point of process 0.1V correspondence, obtains the actual barrier height of the Schottky contacts of described first diode
Described the 3rd section curve C 3 carried out obtaining straight line F3 behind the linear fit, and its slope is k
3, utilize
Can get n
1The actual barrier height of the Schottky contacts of described first diode
Calculating be that described straight line F3 is moved to low-pressure area, and through the current point of 0.1V correspondence, this moment is with the intersection I of straight line and Y-axis
Gs0' ask first diode
Formula is
It is V 〉=3kT that the I-V standard law is selected the prerequisite of linear zone, and the voltage of first point of linear zone need be chosen 0.1V and both meet the demands after 0.077V so, and deviation is little, makes things convenient for the stepping setting of analyzing parameters of semiconductor instrument again.Two kinds of methods are calculated first diode
Differ 0.002ev, good consistance is arranged.
In addition, the model of Chen is still pressed in the extraction of second diode parameters, second diode
Calculate 0.55ev, and the Al component is 0.3 AlGaN/AlN/GaN heterojunction structure
Can be with simulation result is 0.61ev, with the data fit of calculating better.
All can obtain well to coincide after will carrying the parameter value back substitution Schottky model of joining acquisition with the method for embodiment one or embodiment two with measured data.Fig. 6 is the Schottky forward I-V family curve actual measured value (dot-and-dash line) of embodiment of the invention GaN HEMT device and the contrast synoptic diagram of match value (solid line).As shown in Figure 6, this figure is a semilog plot, the goodness of fit of performance forward Schottky curve fitting that more can be careful, and two lines coincide basically as can be seen, and wherein, matched curve departing under high pressure is because the influence of resistance in series.
Parameter extracting method of the present invention is applicable to that the GaN HEMT device of recessed phenomenon appears in Schottky forward I-V family curve after the high temperature storage at low-pressure area, and this moment traditional I-V standard put forward the ginseng method can not be suitable fully, it is identical substantially that parameter value generation that using said method is extracted is returned the data and the measured data that obtain behind the model.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the Schottky parameter extracting method of a GaN HEMT device, the equivalent-circuit model of described GaN HEMT device is to be in series by first diode of back-to-back formula and second diode, described first diode is the schottky diode between metal and the AlGaN, and described second diode is the equivalent diode on the AlGaN/GaN heterojunction boundary; The Schottky forward I-V family curve of described GaN HEMT device is made up of the first section curve (C1), second section curve (C2), the 3rd section curve (C3) and the 4th section curve (C4) that link to each other successively, be the boundary with the flex point between described four sections curves, it is characterized in that described Schottky parameter extracting method may further comprise the steps:
Step a: analyze the 3rd section curve (C3) the corresponding physical process in the described Schottky forward I-V family curve, described the 3rd section curve (C3) is corresponding, and voltage all is applied to the physical process that produces electric current on described first diode, this moment, voltage no longer was applied on described second diode, described the 3rd section curve (C3) comprises one section linear zone, and described linear zone is positioned between the point and the flex point between described second section curve (C2) and the 3rd section curve (C3) on the curve of cut-in voltage correspondence of described GaN HEMT device;
Step b: the linear zone of described the 3rd section curve (C3) is carried out linear fit obtain the 3rd straight line (F3), its slope is k
3, according to the slope k of described the 3rd straight line (F3)
3Obtain the ideal factor n of the Schottky contacts of described first diode
1With actual barrier height
Utilize
Can get ideal factor n
1, wherein, q is an electron charge, and k is a Boltzmann constant, and T is a kelvin degree,
Obtain the actual barrier height of the Schottky contacts of described first diode
Step specifically comprise:
Step b1: utilize formula
Obtain the outward appearance barrier height of the Schottky contacts of described first diode
Wherein, k is a Boltzmann constant, and T is a kelvin degree, A
*Be the Li Chaxun constant, A is the grid area of section, I
Gs0It is the intersection point of the 3rd straight line (F3) and Y-axis;
Step b2: described first section curve (C1) and second section curve (C2) are carried out linear fit obtain article one straight line (F1) and second straight line (F2) respectively, utilize described second straight line (F2) and first intersection point (O) and described first intersection point (O) of the 3rd straight line (F3) to arrive the projection line of Y-axis and second intersection point (O ') of article one straight line (F1), obtain the difference between the horizontal ordinate of the horizontal ordinate of described first intersection point (O) and second intersection point (O '), be the bias voltage V that is applied on described second diode
2
Step b3:, utilize the bias voltage V that is applied on described second diode in conjunction with the relation of electric current and voltage in the described Schottky forward I-V family curve
2, right
Revise, obtain the actual barrier height of the Schottky contacts of described first diode
2. the Schottky parameter extracting method of a GaN HEMT device, the equivalent-circuit model of described GaN HEMT device is to be in series by first diode of back-to-back formula and second diode, described first diode is the schottky diode between metal and the AlGaN, and described second diode is the equivalent diode on the AlGaN/GaN heterojunction boundary; The Schottky forward I-V family curve of described GaN HEMT device is made up of the first section curve (C1), second section curve (C2), the 3rd section curve (C3) and the 4th section curve (C4) that link to each other successively, be the boundary with the flex point between described four sections curves, it is characterized in that described Schottky parameter extracting method may further comprise the steps:
Step a: analyze the 3rd section curve (C3) the corresponding physical process in the described Schottky forward I-V family curve, described the 3rd section curve (C3) is corresponding, and voltage all is applied to the physical process that produces electric current on described first diode, this moment, voltage no longer was applied on described second diode, described the 3rd section curve (C3) comprises one section linear zone, and described linear zone is positioned between the point and the flex point between described second section curve (C2) and the 3rd section curve (C3) on the curve of cut-in voltage correspondence of described GaN HEMT device;
Step b: the linear zone of described the 3rd section curve (C3) is carried out linear fit obtain the 3rd straight line (F3), its slope is k
3, according to the slope k of described the 3rd straight line (F3)
3Obtain the ideal factor n of the Schottky contacts of described first diode
1With actual barrier height
Utilize
Can get ideal factor n
1, wherein, q is an electron charge, and k is a Boltzmann constant, and T is a kelvin degree,
Obtain the actual barrier height of the Schottky contacts of described first diode
Step be specially: described the 3rd straight line (F3) moved to low-pressure area, and, utilizes formula through the current point of 0.1V correspondence
Obtain the actual barrier height of the Schottky contacts of described first diode
Wherein, k is a Boltzmann constant, and T is a kelvin degree, A
*Be the Li Chaxun constant, A is the grid area of section, I
Gs0' be that the 3rd straight line (F3) moves to behind the low-pressure area intersection point with Y-axis.
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| CN107255519A (en) * | 2017-05-25 | 2017-10-17 | 中国电子科技集团公司第十三研究所 | The method and fixture of a kind of extraction GaNHEMT device electrothermic model parameters |
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| CN102768704A (en) * | 2012-07-10 | 2012-11-07 | 中国科学院微电子研究所 | Method for evaluating schottky current transportation mode of semiconductor device |
| CN103149522A (en) * | 2012-09-19 | 2013-06-12 | 上海集成电路研发中心有限公司 | Extraction method for Schottky diode barrier height |
| CN103728545B (en) * | 2014-01-06 | 2017-03-22 | 中国科学院微电子研究所 | Evaluation method for Schottky contact reliability of GaN-based device |
| CN107037284B (en) * | 2017-03-29 | 2019-04-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Measurement is using semiconductor as the method for the graphene microcell mobility of substrate |
| CN110084001B (en) * | 2019-06-26 | 2019-10-08 | 湖南德雅坤创科技有限公司 | A kind of model parameter scaling method of Schottky diode |
| CN112285519B (en) * | 2020-10-26 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | Method for measuring series resistance and ideal factor in diode gating array |
| CN113555311A (en) * | 2021-07-15 | 2021-10-26 | 华南师范大学 | Gallium nitride wafer material containing insulating substrate and preparation and application thereof |
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