CN101655192B - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN101655192B CN101655192B CN2009101405057A CN200910140505A CN101655192B CN 101655192 B CN101655192 B CN 101655192B CN 2009101405057 A CN2009101405057 A CN 2009101405057A CN 200910140505 A CN200910140505 A CN 200910140505A CN 101655192 B CN101655192 B CN 101655192B
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- substrate
- photonic crystal
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000004038 photonic crystal Substances 0.000 claims abstract description 49
- 239000011159 matrix material Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 28
- 239000003989 dielectric material Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 151
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000005755 formation reaction Methods 0.000 description 10
- 238000004943 liquid phase epitaxy Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8979608P | 2008-08-18 | 2008-08-18 | |
US61/089,796 | 2008-08-18 | ||
US12/202,167 US8415691B2 (en) | 2008-08-18 | 2008-08-29 | Omnidirectional reflector |
US12/202,167 | 2008-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101655192A CN101655192A (zh) | 2010-02-24 |
CN101655192B true CN101655192B (zh) | 2013-04-24 |
Family
ID=41680683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101405057A Active CN101655192B (zh) | 2008-08-18 | 2009-05-06 | 发光装置 |
Country Status (3)
Country | Link |
---|---|
US (3) | US8415691B2 (zh) |
CN (1) | CN101655192B (zh) |
TW (1) | TWI427825B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9461201B2 (en) | 2007-11-14 | 2016-10-04 | Cree, Inc. | Light emitting diode dielectric mirror |
US7915629B2 (en) | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
DE102009004251B3 (de) * | 2009-01-07 | 2010-07-01 | Ovd Kinegram Ag | Sicherheitselement sowie Verfahren zur Herstellung eines Sicherheitselements |
TW201101547A (en) * | 2009-06-23 | 2011-01-01 | Univ Kun Shan | Packaging structure of light emitting diode |
US9362459B2 (en) * | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
US9435493B2 (en) * | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
US9105824B2 (en) | 2010-04-09 | 2015-08-11 | Cree, Inc. | High reflective board or substrate for LEDs |
US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
CN102299225B (zh) * | 2010-06-22 | 2013-08-28 | 联胜光电股份有限公司 | 具有高反射与低缺陷密度的发光二极管结构 |
US8764224B2 (en) | 2010-08-12 | 2014-07-01 | Cree, Inc. | Luminaire with distributed LED sources |
US8158998B2 (en) * | 2010-08-18 | 2012-04-17 | High Power Opto, Inc. | High-reflectivity and low-defect density LED structure |
US8680556B2 (en) | 2011-03-24 | 2014-03-25 | Cree, Inc. | Composite high reflectivity layer |
US9728676B2 (en) | 2011-06-24 | 2017-08-08 | Cree, Inc. | High voltage monolithic LED chip |
US10243121B2 (en) | 2011-06-24 | 2019-03-26 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
US8686429B2 (en) | 2011-06-24 | 2014-04-01 | Cree, Inc. | LED structure with enhanced mirror reflectivity |
US9147931B1 (en) * | 2013-03-15 | 2015-09-29 | Sandia Corporation | Metal-free magnetic conductor substrates for placement-immune antenna assemblies |
ES2466515B1 (es) * | 2013-11-06 | 2015-03-23 | Sgenia Soluciones | Dispositivo fotovoltaico de capa fina con estructura de cristal fotónico y comportamiento como sistema de confinamiento cuántico, y su procedimiento de fabricación |
US10658546B2 (en) | 2015-01-21 | 2020-05-19 | Cree, Inc. | High efficiency LEDs and methods of manufacturing |
CN109752777B (zh) * | 2019-03-07 | 2021-05-04 | 京东方科技集团股份有限公司 | 光子晶体膜、液晶显示模组和显示装置 |
CN112133811B (zh) * | 2019-06-25 | 2022-03-29 | 成都辰显光电有限公司 | 显示面板、显示装置及显示面板的制备方法 |
CN111430516B (zh) * | 2020-03-24 | 2021-10-22 | 纳晶科技股份有限公司 | 量子点发光装置以及显示装置 |
US12062737B2 (en) | 2020-12-17 | 2024-08-13 | Samsung Electronics Co., Ltd. | LED chip and display apparatus including the same |
CN116964520A (zh) | 2021-06-29 | 2023-10-27 | 三星电子株式会社 | 显示装置 |
CN113707733A (zh) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | 一种波导型Ge/Si雪崩光电二极管及制备方法 |
US12046697B2 (en) | 2021-10-18 | 2024-07-23 | Samsung Electronics Co., Ltd. | Backlight unit including green and blue LEDs and associated distributed bragg reflectors |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5955749A (en) * | 1996-12-02 | 1999-09-21 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
US6803603B1 (en) * | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
US6775314B1 (en) * | 2001-11-29 | 2004-08-10 | Sandia Corporation | Distributed bragg reflector using AIGaN/GaN |
US6829281B2 (en) * | 2002-06-19 | 2004-12-07 | Finisar Corporation | Vertical cavity surface emitting laser using photonic crystals |
AU2003301367A1 (en) * | 2002-10-16 | 2004-05-04 | Lake Shore Cryotronics, Inc. | Spectral filter for green and longer wavelengths |
US6943377B2 (en) * | 2002-11-21 | 2005-09-13 | Sensor Electronic Technology, Inc. | Light emitting heterostructure |
US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
TWI226708B (en) * | 2003-06-16 | 2005-01-11 | Han Shin Company Ltd | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
US7367691B2 (en) * | 2003-06-16 | 2008-05-06 | Industrial Technology Research Institute | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
US20050152417A1 (en) * | 2004-01-08 | 2005-07-14 | Chung-Hsiang Lin | Light emitting device with an omnidirectional photonic crystal |
US7509012B2 (en) * | 2004-09-22 | 2009-03-24 | Luxtaltek Corporation | Light emitting diode structures |
US7406239B2 (en) * | 2005-02-28 | 2008-07-29 | 3M Innovative Properties Company | Optical elements containing a polymer fiber weave |
-
2008
- 2008-08-29 US US12/202,167 patent/US8415691B2/en active Active
-
2009
- 2009-03-12 TW TW098107981A patent/TWI427825B/zh active
- 2009-05-06 CN CN2009101405057A patent/CN101655192B/zh active Active
-
2013
- 2013-04-05 US US13/857,678 patent/US8609448B2/en active Active
- 2013-11-07 US US14/073,915 patent/US8766309B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101655192A (zh) | 2010-02-24 |
US8609448B2 (en) | 2013-12-17 |
US8766309B2 (en) | 2014-07-01 |
US20130224892A1 (en) | 2013-08-29 |
US20140054637A1 (en) | 2014-02-27 |
TWI427825B (zh) | 2014-02-21 |
US8415691B2 (en) | 2013-04-09 |
TW201010138A (en) | 2010-03-01 |
US20100038659A1 (en) | 2010-02-18 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160427 Address after: Hsinchu City, Taiwan, China Patentee after: EPISTAR Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Yuanxin Optoelectronics Co.,Ltd. Effective date of registration: 20160427 Address after: Hsinchu City, Taiwan, China Patentee after: Yuanxin Optoelectronics Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: Taiwan Semiconductor Manufacturing Co.,Ltd. |