CN101654598B - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN101654598B CN101654598B CN200810041994.6A CN200810041994A CN101654598B CN 101654598 B CN101654598 B CN 101654598B CN 200810041994 A CN200810041994 A CN 200810041994A CN 101654598 B CN101654598 B CN 101654598B
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- chemical mechanical
- mechanical polishing
- polishing liquid
- salt
- quaternary ammonium
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Abstract
The invention discloses chemical mechanical polishing solution, which comprises grinded particles, periodic acid and/or salts thereof, phosphoric acid and/or salts thereof and water. The polishing solution can improve the velocity of removing tungsten remarkably.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
Along with the development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.Twentieth century eighties, the cmp of being initiated by IBM Corporation (CMP) technology is considered to the effective means of current overall planarization.
Cmp (CMP) is combined into by chemical action, mechanical effect and this two kinds of effects.It is conventionally by a grinding stage with polishing pad, and a grinding head for carries chips forms.Wherein grinding head is fixed chip, then the front of chip is pressed on polishing pad.When carrying out cmp, grinding head moves or rotates along the direction of motion the same with grinding stage at polishing pad Linear.Meanwhile, the slurries that contain abrasive are dripped on polishing pad, and are laid on polishing pad because of centrifugation.Chip surface is realized overall planarization under mechanical and chemical dual function.
The main mechanism of metal CMP is: oxygenant is first by oxidation on metal surface film forming, and subsequently, abrasive is removed oxide film machinery, produce new metallic surface continue oxidized, these two kinds collaborative the carrying out of effect.
As the tungsten of one of CMP (cmp) object, under high current density, anti-electronic migration is good, do not form hillock, stress is low, and can form good ohmic contact with silicon, so can be used as filler metal and the diffusion impervious layer of contact hole and interlayer hole.
For the polishing of tungsten, conventional oxygenant has K
3[Fe (CN)
6], Fe (NO
3)
3, KIO
3with hydrogen peroxide etc.
For example, US Patent No. 5340370, in US5954975 with K
3[Fe (CN)
6] make oxygenant, US Patent No. 5770103 is with KIO
3make oxygenant, US Patent No. 5958288,6068787 is made catalyzer with iron nitrate, hydrogen peroxide as oxidant.
In above many oxidant types, K
3[Fe (CN)
6], Fe (NO
3)
3can introduce Fe
3+, KIO
3can introduce K
+, form ion and stain, affect device performance, and K
3[Fe (CN)
6] also having severe toxicity, this correspondence is for the production of being very disadvantageous, and can cause serious environmental pollution.
Summary of the invention
Technical problem to be solved by this invention has been to provide a kind of chemical mechanical polishing liquid that can significantly improve tungsten removal speed.
The invention provides a kind of chemical mechanical polishing liquid, it contains abrasive grains, phosphoric acid and/or its salt, Periodic acid and/or its salt, and water.
Described phosphoric acid salt can be metal-salt, can be also non-metal salt.In the present invention's one preferred embodiment, for reducing ion, stain, use phosphatic non-metal salt, as ammonium phosphate or phosphoric acid quaternary ammonium salt; Substituting group on the nitrogen-atoms of described quaternary ammonium salt is preferably one or more in the alkyl of carbonatoms 1～4; Described substituting group is better is one or more in methyl, ethyl, propyl group and butyl.The consumption of phosphoric acid and/or its salt is preferably 0.1～5%, and better is 1～2%; Per-cent is mass percent.
Periodate of the present invention can be the metal-salt of Periodic acid, can be also non-metal salt.In the present invention's one preferred embodiment, for reducing ion, stain, use the non-metal salt of periodate, as ammonium periodate or Periodic acid quaternary ammonium salt.Substituting group on the nitrogen-atoms of described quaternary ammonium salt is preferably one or more in the alkyl of carbonatoms 1～4; Described substituting group is better is one or more in methyl, ethyl, propyl group and butyl.The consumption of Periodic acid and/or its salt is preferably 0.1～5%, and better is 1～5%; Per-cent is mass percent.
In polishing fluid of the present invention, contain Periodic acid and/or its salt and phosphoric acid and/or its salt simultaneously, can significantly improve the removal speed of tungsten.
Abrasive grains of the present invention adopts the conventional abrasive grains using in this area, and described abrasive grains is preferably selected from SiO
2, Al
2o
3, ZrO
2, CeO
2, SiC, Fe
2o
3, TiO
2and Si
3n
4in one or more, be preferably silicon-dioxide.The consumption of abrasive grains is preferably 0.1～20%, and better is 1～10%; Per-cent is mass percent.The particle diameter of abrasive grains is preferably 30～120nm.
Water of the present invention is preferably deionized water, and water complements to 100%; Per-cent is mass percent.
Polishing fluid of the present invention evenly mixes by mentioned component is simple, and adopting afterwards pH adjusting agent to be adjusted to suitable pH value can make.Described pH adjusting agent is preferably ammonia or quaternary ammonium hydroxide; Substituting group on the nitrogen-atoms of described quaternary ammonium hydroxide is preferably one or more in the alkyl of carbonatoms 1～4; Described substituting group is better is one or more in methyl, ethyl, propyl group and butyl; That described pH adjusting agent is better is tetramethylammonium hydroxide (TMAH).Due to the problem of periodate solubleness, pH value is difficult for regulating, for example, with KOH, regulate and easily generate precipitation.The present invention as pH adjusting agent, has solved this problem with ammonia or quaternary ammonium hydroxide effectively.The consumption of the pH adjusting agent in the present invention is preferably to be as the criterion the pH regulator to 1 of polishing fluid～7.
In chemical mechanical polishing liquid of the present invention, can also add the conventional complementary auxiliary agent adding in this area, as tensio-active agent, sterilant etc.The consumption of complementary auxiliary agent is preferably 0.005～5%, and better is 0.005～1%; Per-cent is mass percent.
The pH value of chemical mechanical polishing liquid of the present invention is 1～7, and better is 2～5.
All reagent that the present invention uses are commercially available obtaining all.
Positive progressive effect of the present invention is:
1, polishing fluid of the present invention effectively improves the removal speed of tungsten.
2,, in preferred embodiment of the present invention, use the non-metal salt of phosphatic non-metal salt and Periodic acid can reduce ion contamination.
3, in the present invention's one preferred embodiment, use ammonia or quaternary ammonium hydroxide as pH adjusting agent, avoided because periodate solubleness is low, while causing using conventional pH adjusting agent, form the phenomenon of precipitation.
Embodiment
With embodiment, further illustrate the present invention below, but the present invention is not limited.
Sodium dodecylbenzene sulfonate, PQ375: Chemical Reagent Co., Ltd., Sinopharm Group
Embodiment 1～10
Table 1 has provided the formula of chemical mechanical polishing liquid embodiment 1～10 of the present invention, press listed component and content thereof in table 1, simply mix, with deionized water, supply polishing fluid content to mass percent 100%, by pH adjusting agent, regulate polishing fluid pH to institute's train value again, make each chemical mechanical polishing liquid.
Table 1
Wherein, Sodium dodecylbenzene sulfonate is as tensio-active agent.PQ375 is sterilant, and concrete structure is: 1,3-dihydroxymethyl-5,5-dimethyl hydantion (glycolylurea).
Effect embodiment 1
Polishing condition is: polishing machine platform is Logitech (Britain) lPM52 type, 12 inches of politex polishing pads, 4cm*4cm square Wafer, grinding pressure 4psi, 70 revs/min of grinding stage rotating speeds, 150 revs/min of grinding head rotation rotating speeds, polishing fluid rate of addition 100ml/min.
Polishing fluid 11～18 and comparative example's 1 formula are in Table 2.Press listed component and content thereof in table 2, simply mix, with deionized water, supply polishing fluid content to mass percent 100%, then adjust polishing fluid pH to institute's train value by pH adjusting agent, make each chemical mechanical polishing liquid.
Table 2
As shown in Table 2, add the removal speed that can significantly improve tungsten after phosphoric acid and/or its salt and Periodic acid and/or its salt.
Effect embodiment 2
Press listed component and content thereof in table 3, simply mix, with deionized water, supply polishing fluid content to mass percent 100%, then adjust pH to institute's train value by pH adjusting agent, make polishing fluid 11 and contrast 2.
Table 3
From table 3, the pH adjusting agent of adding in the present invention can be avoided forming precipitation in polishing fluid, makes polishing fluid system more stable.
Claims (18)
1. a chemical mechanical polishing liquid, it contains abrasive grains, phosphoric acid salt, Periodic acid and/or its salt, and water, wherein, described phosphoric acid salt is phosphoric acid quaternary ammonium salt, substituting group on the nitrogen-atoms of described quaternary ammonium salt is one or more in the alkyl of carbonatoms 1～4, and described substituting group is one or more in methyl, ethyl, propyl group and butyl.
2. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that: described phosphatic content is 0.1～5%; Per-cent is mass percent.
3. chemical mechanical polishing liquid as claimed in claim 2, is characterized in that: described phosphatic content is 1～2%; Per-cent is mass percent.
4. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that: described periodate is ammonium periodate or Periodic acid quaternary ammonium salt.
5. chemical mechanical polishing liquid as claimed in claim 4, is characterized in that: the substituting group on the nitrogen-atoms of described Periodic acid quaternary ammonium salt is one or more in the alkyl of carbonatoms 1～4.
6. chemical mechanical polishing liquid as claimed in claim 5, is characterized in that: described substituting group is one or more in methyl, ethyl, propyl group and butyl.
7. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that: described Periodic acid and/or the content of its salt are 0.1～5%; Per-cent is mass percent.
8. chemical mechanical polishing liquid as claimed in claim 7, is characterized in that: described Periodic acid and/or the content of its salt are 1～5%; Per-cent is mass percent.
9. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that: described abrasive grains is silicon-dioxide.
10. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that: the particle diameter of described abrasive grains is 30～120nm.
11. chemical mechanical polishing liquids as claimed in claim 1, is characterized in that: the content of described abrasive grains is 0.1～20%; Per-cent is mass percent.
12. chemical mechanical polishing liquids as claimed in claim 11, is characterized in that: the content of described abrasive grains is 1～10%; Per-cent is mass percent.
13. chemical mechanical polishing liquids as claimed in claim 1, is characterized in that: in described chemical mechanical polishing liquid, add ammonia and/or quaternary ammonium hydroxide as pH adjusting agent.
14. chemical mechanical polishing liquids as claimed in claim 13, is characterized in that: the substituting group on the nitrogen-atoms of described quaternary ammonium hydroxide is one or more in the alkyl of carbonatoms 1～4.
15. chemical mechanical polishing liquids as claimed in claim 14, is characterized in that: the substituting group of the alkyl on the nitrogen-atoms of described quaternary ammonium hydroxide is one or more in methyl, ethyl, propyl group and butyl.
16. chemical mechanical polishing liquids as claimed in claim 15, is characterized in that: described quaternary ammonium hydroxide is tetramethylammonium hydroxide.
17. chemical mechanical polishing liquids as described in any one in claim 1～16, is characterized in that: the pH value of described chemical mechanical polishing liquid is 1～7.
18. chemical mechanical polishing liquids as claimed in claim 17, is characterized in that: the pH value of described chemical mechanical polishing liquid is 2～5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041994.6A CN101654598B (en) | 2008-08-22 | 2008-08-22 | Chemical mechanical polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041994.6A CN101654598B (en) | 2008-08-22 | 2008-08-22 | Chemical mechanical polishing solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101654598A CN101654598A (en) | 2010-02-24 |
| CN101654598B true CN101654598B (en) | 2014-03-26 |
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ID=41709059
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810041994.6A Active CN101654598B (en) | 2008-08-22 | 2008-08-22 | Chemical mechanical polishing solution |
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| Country | Link |
|---|---|
| CN (1) | CN101654598B (en) |
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- 2008-08-22 CN CN200810041994.6A patent/CN101654598B/en active Active
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| CN101654598A (en) | 2010-02-24 |
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