CN101955731A - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
- Publication number
- CN101955731A CN101955731A CN2009100547120A CN200910054712A CN101955731A CN 101955731 A CN101955731 A CN 101955731A CN 2009100547120 A CN2009100547120 A CN 2009100547120A CN 200910054712 A CN200910054712 A CN 200910054712A CN 101955731 A CN101955731 A CN 101955731A
- Authority
- CN
- China
- Prior art keywords
- polishing
- chemical mechanical
- polishing solution
- mechanical polishing
- polishing fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 46
- 239000000126 substance Substances 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 150000003983 crown ethers Chemical class 0.000 claims abstract description 10
- 239000012530 fluid Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 229960001866 silicon dioxide Drugs 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000006061 abrasive grain Substances 0.000 claims description 9
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 2
- 239000000084 colloidal system Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses chemical mechanical polishing solution, which comprises silica abrasive particles and crown ether, wherein the pH value of the polishing solution is no more than 7. The chemical mechanical polishing solution can obviously improve the polishing speed of silicon nitride, and also can relatively reduce consumption of chemicals in the polishing solution so as to further reduce environmental pollution.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
Along with the continuous development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.Twentieth century eighties, be considered to the effective means of present overall planarization by cmp (CMP) technology of IBM Corporation's initiative.
Cmp (CMP) is by chemical action, mechanical effect and these two kinds effect be combined intos.It is usually by a grinding stage that has polishing pad, and a grinding head that is used for carries chips is formed.Wherein grinding head is fixed chip, and the front with chip is pressed on the polishing pad then.When carrying out cmp, grinding head linearity on polishing pad moves or rotates along the direction of motion the same with grinding stage.Meanwhile, the slurries that contain abrasive are dripped on the polishing pad, and are tiled on the polishing pad because of centrifugation.Chip surface is realized overall planarization under machinery and chemical dual effect.
Si
3N
4The purpose of CMP is by polishing, removes excessive silicon nitride, forms required smooth surface.Used polishing fluid is many based on mechanical effect.Abrasive grains is the silicon-dioxide of high density normally.
US6239032 discloses a kind of phosphoric acid and derivative raising Si thereof of adding in the silicon-dioxide lapping liquid
3N
4The method of polishing velocity, in this system, the diameter of silicon-dioxide abrasive grains preferably is lower than 10nm; US20060084270A1 discloses a kind of specific acid additives raising Si that adds in the silicon-dioxide lapping liquid
3N
4The method of polishing velocity, this class with acetic acid be the additive of representative at 85% aqueous phase to Si
3N
4Erosive velocity (etching rate) less than 0.1nm/hr, in this system, the diameter of silicon-dioxide abrasive grain preferably is lower than 50nm.
Introduce acidic substance such as phosphoric acid, acetic acid in the above-mentioned patent, the pH value of lapping liquid can be reduced,, soda acid pH regulator agent such as nitric acid, potassium hydroxide, ammoniacal liquor can be further introduced in order to regulate the pH value, cause the increase of electrolyte concentration, can cause the decline of lapping liquid stability then.In addition, phosphoric acid class material can influence the polishing velocity of other polishing objects, (for example can improve the polishing velocity of TEOS, Cu usually).Therefore in some applications, acidic substance such as phosphoric acid, acetic acid can become and be not suitable as the additive use.
Summary of the invention
It is low to the objective of the invention is to solve in the prior art lapping liquid stability, and polishing velocity is lower, bigger to the influence of pH value, and can cause the defective to the ionic soil of semiconducter device.Provide a kind of and can significantly improve Si
3N
4The polishing velocity chemical mechanical polishing liquid.
Technical scheme of the present invention is as follows:
A kind of chemical mechanical polishing liquid comprises: silicon-dioxide abrasive grains, crown ether, the pH value of this polishing fluid is not more than 7.
Among the present invention, described silicon-dioxide abrasive grains is Fumed SiO
2(aerosil) and/or colloidal SiO
2(colloid silica).
Among the present invention, the content of described silicon-dioxide abrasive grains is mass percent 0.1～50%.
Among the present invention, described crown ether comprises 12-crown-4,15-hat-5,18-hat-6, hexichol-18-hat-6 and phenodiazine-18-hat-6, preferred 18-hat-6.
Among the present invention, described crown ether content is mass percent 0.1～10%.
Among the present invention, the preferred 1-4. of pH value
The present invention can also further comprise other conventional additives, further improves other nonmetallic polishing velocities as adding complexing agent; Add tensio-active agent and be used to improve the cleaning on wafer surface, or the like.
Positively effect of the present invention is: the polishing velocity that significantly promotes silicon nitride.Because crown ether itself is not an ionogen, therefore metal ion can not cause the ionic soil to semiconducter device.In addition, the raising owing to silicon nitride polishing speed has reduced polishing time, has improved production efficiency, has reduced manufacturing cost.Because the raising of polishing speed can also reduce the consumption of chemical in the polishing fluid relatively, thereby further reduce environmental pollution.
Embodiment
Further set forth the present invention below by specific embodiment.
According to the prescription in the table 1, each component simply is mixed in the deionized water, with acidic ph modifier (HNO for example
3) be adjusted to needed pH value, can obtain chemical mechanical polishing liquid of the present invention.
Table 1, embodiment 1～10
Effect embodiment:
Below the preferred embodiments of the present invention and chemical mechanical polishing liquid of the prior art are polished contrast, further set forth advantage of the present invention.
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, 12 inches politex polishing pads (pad), 4cm*4cm square Wafer, grinding pressure 4psi, 70 rev/mins of grinding stage (polishing table) rotating speeds, 150 rev/mins of grinding head (carrier) rotation rotating speeds, polishing fluid rate of addition 100ml/min.
Table 2 embodiment of the invention 6～10 and Comparative Examples 1 prescription and effect comparison
From above effect embodiment as can be seen, compare, in polishing fluid, add crown ether, can significantly promote the polishing velocity of silicon nitride with the Comparative Examples 1 that does not add crown ether.Wherein the effect of 18-hat-6 is the most obvious.
Claims (6)
1. chemical mechanical polishing liquid, comprise: silicon-dioxide abrasive grains, crown ether, the pH value of described polishing fluid is not more than 7.
2. polishing fluid as claimed in claim 1 is characterized in that: described silicon-dioxide abrasive grains is aerosil and/or colloid silica.
3. polishing fluid as claimed in claim 1 is characterized in that: the content of described silicon-dioxide abrasive grains is mass percent 0.1～50%.
4. polishing fluid as claimed in claim 1 is characterized in that: described crown ether is selected from one or more in 12-crown-4,15-hat-5,18-hat-6, hexichol-18-hat-6 and the phenodiazine-18-hat-6.
5. polishing fluid as claimed in claim 1 is characterized in that: described crown ether content is mass percent 0.1～10%.
6. polishing fluid as claimed in claim 1 is characterized in that: the pH value of described polishing fluid is 1-4.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100547120A CN101955731A (en) | 2009-07-13 | 2009-07-13 | Chemical mechanical polishing solution |
| PCT/CN2010/001036 WO2011006348A1 (en) | 2009-07-13 | 2010-07-12 | Chemical mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100547120A CN101955731A (en) | 2009-07-13 | 2009-07-13 | Chemical mechanical polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101955731A true CN101955731A (en) | 2011-01-26 |
Family
ID=43448902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100547120A Pending CN101955731A (en) | 2009-07-13 | 2009-07-13 | Chemical mechanical polishing solution |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101955731A (en) |
| WO (1) | WO2011006348A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104263247A (en) * | 2014-09-16 | 2015-01-07 | 朱忠良 | Chemico-mechanical polishing method of silicon nitride ceramic |
| CN115011257A (en) * | 2022-06-30 | 2022-09-06 | 万华化学集团电子材料有限公司 | Tungsten polishing solution capable of prolonging service life of POU (polymer electrolyte unit) and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6099604A (en) * | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
| US6239032B1 (en) * | 1997-12-12 | 2001-05-29 | Kabushiki Kaisha Toshiba | Polishing method |
| US6458290B1 (en) * | 1998-09-03 | 2002-10-01 | Micron Technology, Inc. | Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers |
| CN1676563A (en) * | 2004-03-29 | 2005-10-05 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for chemical mechanical planarization of tungsten and titanium |
| US20060084270A1 (en) * | 2004-10-19 | 2006-04-20 | Fujimi Incorporated | Composition for selectively polishing silicon nitride layer and polishing method employing it |
| CN101040021A (en) * | 2004-10-12 | 2007-09-19 | 卡伯特微电子公司 | Cmp composition with a polymer additive for polishing noble metals |
-
2009
- 2009-07-13 CN CN2009100547120A patent/CN101955731A/en active Pending
-
2010
- 2010-07-12 WO PCT/CN2010/001036 patent/WO2011006348A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6099604A (en) * | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
| US6239032B1 (en) * | 1997-12-12 | 2001-05-29 | Kabushiki Kaisha Toshiba | Polishing method |
| US6458290B1 (en) * | 1998-09-03 | 2002-10-01 | Micron Technology, Inc. | Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers |
| CN1676563A (en) * | 2004-03-29 | 2005-10-05 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for chemical mechanical planarization of tungsten and titanium |
| CN101040021A (en) * | 2004-10-12 | 2007-09-19 | 卡伯特微电子公司 | Cmp composition with a polymer additive for polishing noble metals |
| US20060084270A1 (en) * | 2004-10-19 | 2006-04-20 | Fujimi Incorporated | Composition for selectively polishing silicon nitride layer and polishing method employing it |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104263247A (en) * | 2014-09-16 | 2015-01-07 | 朱忠良 | Chemico-mechanical polishing method of silicon nitride ceramic |
| CN104263247B (en) * | 2014-09-16 | 2016-11-30 | 青岛玉兰祥商务服务有限公司 | A kind of method of silicon nitride ceramics chemically mechanical polishing |
| CN115011257A (en) * | 2022-06-30 | 2022-09-06 | 万华化学集团电子材料有限公司 | Tungsten polishing solution capable of prolonging service life of POU (polymer electrolyte unit) and application thereof |
| CN115011257B (en) * | 2022-06-30 | 2023-12-19 | 万华化学集团电子材料有限公司 | Tungsten polishing solution with POU service life improving function and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011006348A1 (en) | 2011-01-20 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110126 |