CN101651149B - HBT structure with controllable working frequency in RF field - Google Patents

HBT structure with controllable working frequency in RF field Download PDF

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Publication number
CN101651149B
CN101651149B CN 200910053711 CN200910053711A CN101651149B CN 101651149 B CN101651149 B CN 101651149B CN 200910053711 CN200910053711 CN 200910053711 CN 200910053711 A CN200910053711 A CN 200910053711A CN 101651149 B CN101651149 B CN 101651149B
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China
Prior art keywords
type impurity
high concentration
type
hbt
buried regions
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CN 200910053711
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Chinese (zh)
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CN101651149A (en
Inventor
吴小莉
许丹
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上海宏力半导体制造有限公司
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Priority to CN 200910053711 priority Critical patent/CN101651149B/en
Publication of CN101651149A publication Critical patent/CN101651149A/en
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Abstract

The invention discloses an HBT structure with controllable working frequency in the RF field, comprising a high-concentration P-type impurity buried layer injected between a P-type substrate and a collector region. By injecting high-concentration P-type impurity in an npn-type HBT device, the invention leads a longitudinal electrical filed in the device and realizes control of voltage on working frequency by the way that collector voltage controls the electrical field.

Description

The controlled HBT structure of operating frequency that is used for the RF field

Technical field

The present invention relates to a kind of semiconductor device and integrated circuit fabrication process, be specifically related to a kind of for controlled heterogenous dual-pole transistor (HeterojunctionBipolar Transistor, the HBT) preparation method of the operating frequency in radio frequency (RF) field.

Background technology

Be illustrated in figure 1 as the structural representation of existing HBT: inject high concentration N-type buried impurity layer 9 at p-type substrate 1 and draw as collector region, the N-type Impurity injection forms N-type collector region (collecter) 3, and shallow-trench isolation (STI) 4 structures are carried out the electricity isolation with the HBT of unit.Growth has P type SiGe epitaxial loayer 7 on the collector region 3, and p-type SiGe epitaxial loayer 7 peripheries have oxidation isolation window mouth (oxide spacer) 5, are emitter region on the P type SiGe epitaxial loayer 7.

The operating frequency of above-mentioned existing HBT device too slowly and not has controllability (shown in Figure 3) with the variation of emitter-collector voltage, and with the variation of emitter-base stage too fast and uncontrollable (shown in Figure 2), so existing HBT device can only be operated under the specific operating frequency usually, and can not regulate operating frequency by applied voltage.

Summary of the invention

Technical problem to be solved by this invention provides a kind of for the controlled HBT structure of the operating frequency in RF field, and it can be regulated operating frequency by applied voltage.

In order to solve above technical problem, the invention provides a kind ofly for the controlled HBT structure of the operating frequency in RF field, comprise a high concentration p type impurity buried regions that between P type substrate and collector region, injects.

The present invention introduces a longitudinal electric field by the injection at the high concentration p type impurity of npn type HBT device collector electrode in device, by collector voltage the control of this electric field has been realized the control of voltage to operating frequency.

Description of drawings

Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.

Fig. 1 is existing HBT structural representation;

Fig. 2 is existing HBT device operating frequency and base-emitter voltage relationship figure;

Fig. 3 is existing HBT device operating frequency and collector to-boase voltage graph of a relation;

Fig. 4 is HBT structural representation of the present invention;

Fig. 5 is HBT device operating frequency of the present invention and collector to-boase voltage graph of a relation.

Reference numeral among the figure is: 1, P type substrate; 2, high concentration p type impurity buried regions; 3, collector region; 4, shallow-trench isolation; 5, oxidation isolation window; 6, high concentration p type impurity buried regions is to the distance of shallow-trench isolation; 7, P type SiGe epitaxial loayer; 8, exhaust line; 9, high concentration N-type buried impurity layer; BP2STI, high concentration p type impurity buried regions arrive the distance of shallow-trench isolation.

Embodiment

As shown in Figure 4, of the present invention is to inject the high concentration p type impurity between the P of existing HBT type substrate 1 and collector region 3 for the controlled HBT structure of the operating frequency in RF field, forms a high concentration p type impurity buried regions 2, exhausts line 8 in collector region 3.

Preferably, this high concentration p type impurity buried regions 2 has the 1e19cm of being not less than -3Impurity concentration.

Preferably, this high concentration p type impurity buried regions is 600nm~1000nm to the distance 6 of shallow-trench isolation.

Preferably, this high concentration p type impurity buried regions 2 has the thickness of 150nm~200nm.

Of the present inventionly can make by the conventional process of semiconductor applications for the controlled HBT structure of the operating frequency in RF field, manufacture method is as follows:

(1) shallow-trench isolation preparation;

(2) inject high concentration boron ion (this is important step of the present invention) at P type substrate, implanted dopant concentration is 1e19cm -3, high concentration p type impurity buried regions is 800nm to the distance of shallow-trench isolation, the high concentration p type impurity buried regions thickness of formation is 153nm;

(3) carrying out collector region at high concentration p type impurity buried regions injects;

(4) oxidation isolation window interruption-forming;

(5) SiGe growth;

(6) emitter preparation.

The present invention introduces a longitudinal electric field by the injection at the high concentration p type impurity of npn type HBT device collector electrode in device, by collector voltage the control of this electric field has been realized the control of voltage to operating frequency.As shown in Figure 5, when high concentration p type impurity buried regions was respectively 0.4 μ m, 0.6 μ m and 0.8 μ m to the distance (BP2STI) of shallow-trench isolation, the curve of operating frequency and collector to-boase voltage relation had had controllability between 2V~10V.

Claims (1)

1. controlled HBT structure of operating frequency that is used for the RF field, it is characterized in that, comprise a high concentration p type impurity buried regions that injects between P type substrate and collector region, wherein, described high concentration p type impurity buried regions is 600nm~1000nm to the distance of shallow-trench isolation; Described high concentration p type impurity buried regions has the thickness of 150~200nm; Described high concentration p type impurity buried regions has the lel9cm of being not less than -3Impurity concentration.
CN 200910053711 2009-06-24 2009-06-24 HBT structure with controllable working frequency in RF field CN101651149B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200910053711 CN101651149B (en) 2009-06-24 2009-06-24 HBT structure with controllable working frequency in RF field

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Application Number Priority Date Filing Date Title
CN 200910053711 CN101651149B (en) 2009-06-24 2009-06-24 HBT structure with controllable working frequency in RF field

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CN101651149A CN101651149A (en) 2010-02-17
CN101651149B true CN101651149B (en) 2013-01-02

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102142457A (en) * 2011-03-15 2011-08-03 上海宏力半导体制造有限公司 Heterojunction bipolar transistor and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012170A (en) * 2003-05-28 2005-01-13 Toshiba Corp Semiconductor device
CN1667836A (en) * 2004-03-08 2005-09-14 松下电器产业株式会社 Heterojunction bipolar transistor and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012170A (en) * 2003-05-28 2005-01-13 Toshiba Corp Semiconductor device
CN1667836A (en) * 2004-03-08 2005-09-14 松下电器产业株式会社 Heterojunction bipolar transistor and manufacturing method thereof

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Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai