CN101648778A - Low-radiation glass - Google Patents
Low-radiation glass Download PDFInfo
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- CN101648778A CN101648778A CN200910093267A CN200910093267A CN101648778A CN 101648778 A CN101648778 A CN 101648778A CN 200910093267 A CN200910093267 A CN 200910093267A CN 200910093267 A CN200910093267 A CN 200910093267A CN 101648778 A CN101648778 A CN 101648778A
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- emissivity glass
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Abstract
The invention relates to low-radiation glass which belongs to the technical field of energy saving and is characterized in that a basic structure comprises a medium layer consisting of a glass plate,a silver layer and a silicon film. The low-radiation glass has stable performance, high reliability and high production efficiency and can greatly reduce the cost, thereby being beneficial to large-scale popularization and application.
Description
Technical field
The invention belongs to glass manufacturing and field of energy-saving technology, particularly is the low emissivity glass of medium layer with the silicon film.
Background technology
Low emissivity glass is a kind of most of visible light that can see through in the sunlight, part infrared rays in flashing back the sunlight, and have the glass of very low far infrared radiation coefficient, energy-saving effect is very obvious.In developed country, most of building all adopts this low emissivity glass.In China, the application of low emissivity glass is also very not extensive, and major cause is the cost problem.Because price is more much higher than common white glass, therefore can only be used for top-grade building, seldom adopt the residential houses.
Low emissivity glass divides on-line coating and off-line coated two kinds.On-line coating is to adopt chemical process to be coated with SnO 2 thin film on floatation glass production line, and film is firm, can not seal into hollow and application separately, and can carry out tempering and handle.Because radiation coefficient is up to more than 30%, the energy-saving effect of on-line coating low emissivity glass is relatively poor.Off-line coated is to adopt magnetically controlled sputter method deposit multilayer metal and dielectric film on sheet glass, the production cost height, but performance is good, and radiation coefficient is low.A significant disadvantages of existing off-line low emissivity glass is a poor stability, must seal into double glazing after producing in several days, otherwise film performance will descend obviously.Even sealing-in becomes hollow structure, because the weak respiration of seal, sealing materials, oxygen still can slowly enter wherein, causes performance degradation, and serious even variable color comes off.The major obstacle of restriction low emissivity glass large-scale promotion is the cost problem, and the price of current every square metre of common off-line low emissivity glass is more much higher than common white glass.Causing the high major cause of low emissivity glass cost is apparatus expensive, one cover is produced the sputtering equipment of 2,000,000 square meters per year up to more than 100,000,000 yuan, even home equipment is also above 4,000 ten thousand yuan, and take up an area of more than 3 mu, various expenses such as power consumption, mould material, artificial, management make every square meter glass cost increase about about 20 yuan in addition.Reducing the every square meter cost of low emissivity glass increased value significantly, is the prerequisite at Chinese large-scale promotion application, and existing technology can not be accomplished fully.
In the existing off-line coated low-emissivity glass, used dielectric material is mainly titanium dioxide, though resulting radiation coefficient satisfies industry standard, but bigger.For the radiator near room temperature, its radiation center wavelength is 10 microns, and most of radiation is positioned at more than 10 microns, and there is significantly absorption in titanium dioxide more than 10 microns, cause radiation coefficient higher.25 microns radiation to 50 micron wavebands of wavelength account for the nearly 20% of total amount, and generally during the measuring radiation coefficient, because technical difficulty does not comprise this wave band.Above-mentioned factor cause with titanium dioxide be the actual emanations coefficient of low emissivity glass of medium layer greater than observed value, generally speaking greater than 10%, effect of heat insulation is unsatisfactory.
Summary of the invention
The present invention is directed to deficiency and shortcoming that existing off-line low emissivity glass exists, providing a kind of is the low emissivity glass of medium layer with the silicon film, not only can solve the cost problem of low emissivity glass, and stable performance, the large-scale application that can promote to hang down radiation energy-saving glass.
Technical scheme of the present invention is as follows:
Low emissivity glass is characterized in that: medium layer is not set between silver layer and sheet glass, and its structure from bottom to top is followed successively by sheet glass 10, silver layer 11, medium layer 12; Described medium layer 12 adopts silicon film.
In order to increase the reliability of rete, sticking power is set in the both sides up and down of silver layer strengthens layer, this sticking power is strengthened layer and is adopted metal or alloy films such as aluminium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, nickel, stainless steel, and thickness is less than 3 nanometers; This sticking power is strengthened the metal oxide film that layer can also adopt conductions such as zinc oxide, stannic oxide, Indium sesquioxide, tin indium oxide, and thickness is less than 5 nanometers.
In the above-mentioned low emissivity glass, the thickness of silver layer between 5 to 20 nanometers, the thickness of the medium layer that silicon film constitutes also in 5 nanometers between 20 nanometers.
If this low emissivity glass shelf-time in air is long and do not seal into hollow structure, one deck silicon oxide film that can natural oxidation on amorphous silicon membrane forms because it is very thin, can not influence the performance of low emissivity glass.
The present invention compared with prior art has the following advantages and the high-lighting effect: rete reduces, and makes the film-forming apparatus structure greatly simplify, and expense obviously reduces.Because the silver and the sputter rate of non-crystalline silicon are all very high, and thickness has only about 10 nanometers, and the sputtering power that needs is greatly reduction also.
A fundamental characteristics of low emissivity glass is approaching to the reflectivity and the surface of ordinary glass of visible light, even lower, to reduce light pollution.Common single silver layer off-line low emissivity glass all needs to adopt the dual dielectric layer structure, promptly in the both sides up and down of silver layer medium layer is set all, adopts single-dielectric-layer can cause the visible light that reflects too strong, causes light pollution.Among the present invention, be medium layer up to the silicon film more than 4 owing to adopt specific refractory power, thus adopt single-dielectric-layer just the visible light reflection can be controlled at below 5%, close with the reflectivity of surface of ordinary glass, in addition lower.
Another characteristics of the present invention are that silicon has the certain absorption effect to visible light, can reduce the visible light quantity in the inlet chamber, prevent that indoor light is too strong, and the infrared rays in the sunlight is not almost had sorption that reflectivity is close with common low emissivity glass.Stoping in the part visible light inlet chamber does not influence sunlight heating in winter effect, because the low radiance of glass, the energy of absorbed visible light still is radiated indoor with the far infrared form.
The far-infrared radiation coefficient of silicon materials is almost nil, and this is that employing silicon is another advantage of medium layer, and the actual emanations coefficient is lower than any low emissivity glass up to now less than 5%, and heat insulation effect is more obvious.
Description of drawings
Fig. 1 is a low emissivity glass structural representation provided by the invention, only the medium layer that is made of silicon film in the upside setting of silver layer.
Fig. 2 is the low emissivity glass structural representation with sticking power reinforcement layer provided by the invention.
Wherein, 10 is sheet glass, and 11 is silver layer, and 12 is medium layer, and 13 is that silver layer downside sticking power is strengthened layer, and 14 is that silver layer upside sticking power is strengthened layer.
Embodiment
Below by several specific embodiments concrete enforcement of the present invention is described further.
Embodiment 1: low emissivity glass, its structure is followed successively by: the medium layer that the silver layer of sheet glass, 10 nanometer thickness, the silicon film of 10 nanometer thickness constitute.The visible light transmissivity of this low emissivity glass surpasses 70%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 2: low emissivity glass, its structure is followed successively by: the zinc-oxide film of sheet glass, 3 nanometer thickness constitutes sticking power and strengthens the medium layer that the silicon film of the zinc-oxide film formation sticking power reinforcement layer of the silver layer of layer, 12 nanometer thickness, 3 nanometer thickness, 9 nanometer thickness constitutes.The visible light transmissivity of this low emissivity glass surpasses 70%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.07.
Embodiment 3: low emissivity glass, its structure is followed successively by: the titanium film of sheet glass, 2 nanometer thickness constitutes sticking power and strengthens the medium layer that the silicon film of the titanium film formation sticking power reinforcement layer of the silver layer of layer, 12 nanometer thickness, 2 nanometer thickness, 9 nanometer thickness constitutes.The visible light transmissivity of this low emissivity glass surpasses 70%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Embodiment 4: low emissivity glass, its structure is followed successively by: the titanium film of sheet glass, 2 nanometer thickness constitutes the silver layer of sticking power reinforcement layer, 12 nanometer thickness, the titanium film of 2 nanometer thickness constitutes the silicon oxide film that natural oxidation forms in the medium layer of the silicon film formation of sticking power reinforcement layer, 9 nanometer thickness, the air.The visible light transmissivity of this low emissivity glass surpasses 70%, and it is 55% that the sunlight transmitance surpasses, and radiation coefficient is less than 0.1.
Claims (4)
1. low emissivity glass, it is characterized in that: medium layer is not set between silver layer and sheet glass, and its structure from bottom to top is followed successively by sheet glass 10, silver layer 11, medium layer 12; Described medium layer 12 adopts silicon film.
2. low emissivity glass according to claim 1, it is characterized in that: sticking power is set in the both sides up and down of silver layer strengthens layer, this sticking power is strengthened layer and is adopted metal or alloy films such as aluminium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, nickel, stainless steel, and thickness is less than 3 nanometers; This sticking power is strengthened the metal oxide film that layer can also adopt conductions such as zinc oxide, stannic oxide, Indium sesquioxide, tin indium oxide, and thickness is less than 5 nanometers.
3. low emissivity glass according to claim 1 is characterized in that: the thickness of described silver layer between 5 to 20 nanometers, the thickness of the medium layer that silicon film constitutes also in 5 nanometers between 20 nanometers.
4. low emissivity glass according to claim 1 is characterized in that: the silicon oxide film that one deck natural oxidation forms can be set on silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910093267A CN101648778A (en) | 2009-09-24 | 2009-09-24 | Low-radiation glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910093267A CN101648778A (en) | 2009-09-24 | 2009-09-24 | Low-radiation glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101648778A true CN101648778A (en) | 2010-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200910093267A Pending CN101648778A (en) | 2009-09-24 | 2009-09-24 | Low-radiation glass |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102584030A (en) * | 2012-01-31 | 2012-07-18 | 林嘉宏 | Coated glass with high light transmission and low radiation |
| CN102744936A (en) * | 2012-08-07 | 2012-10-24 | 鲍冠中 | U-shaped coated glass and manufacture method thereof |
| CN104553202A (en) * | 2015-01-27 | 2015-04-29 | 大连爱瑞德纳米科技有限公司 | Window film and production method thereof as well as window film fixing structure and fixing method |
| CN109853794A (en) * | 2018-12-05 | 2019-06-07 | 屠敏燕 | A kind of outer glass curtain wall of nano-silver thread building |
| CN109932766A (en) * | 2019-03-15 | 2019-06-25 | 深圳大学 | A kind of wave absorbing device of visible light and near infrared band |
-
2009
- 2009-09-24 CN CN200910093267A patent/CN101648778A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102584030A (en) * | 2012-01-31 | 2012-07-18 | 林嘉宏 | Coated glass with high light transmission and low radiation |
| CN102744936A (en) * | 2012-08-07 | 2012-10-24 | 鲍冠中 | U-shaped coated glass and manufacture method thereof |
| CN104553202A (en) * | 2015-01-27 | 2015-04-29 | 大连爱瑞德纳米科技有限公司 | Window film and production method thereof as well as window film fixing structure and fixing method |
| CN109853794A (en) * | 2018-12-05 | 2019-06-07 | 屠敏燕 | A kind of outer glass curtain wall of nano-silver thread building |
| CN109932766A (en) * | 2019-03-15 | 2019-06-25 | 深圳大学 | A kind of wave absorbing device of visible light and near infrared band |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100217 |