CN101640187B - 一种四晶体管sram单元制造方法 - Google Patents
一种四晶体管sram单元制造方法 Download PDFInfo
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- CN101640187B CN101640187B CN200910052809.8A CN200910052809A CN101640187B CN 101640187 B CN101640187 B CN 101640187B CN 200910052809 A CN200910052809 A CN 200910052809A CN 101640187 B CN101640187 B CN 101640187B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 22
- 238000005516 engineering process Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 240000006028 Sambucus nigra Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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CN200910052809.8A CN101640187B (zh) | 2009-06-09 | 2009-06-09 | 一种四晶体管sram单元制造方法 |
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CN200910052809.8A CN101640187B (zh) | 2009-06-09 | 2009-06-09 | 一种四晶体管sram单元制造方法 |
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CN101640187A CN101640187A (zh) | 2010-02-03 |
CN101640187B true CN101640187B (zh) | 2014-04-16 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102376557B (zh) * | 2011-11-30 | 2015-01-14 | 格科微电子(上海)有限公司 | 掺杂的多晶硅栅极的制作方法、mos晶体管及其制作方法 |
CN102610574B (zh) * | 2012-03-31 | 2013-12-18 | 上海华力微电子有限公司 | 提高静态随机存储器写入冗余度的方法 |
CN102832110B (zh) * | 2012-05-22 | 2015-03-18 | 上海华力微电子有限公司 | 一种提高静态随机储存器读出冗余度的方法 |
CN102832174B (zh) * | 2012-05-22 | 2014-08-13 | 上海华力微电子有限公司 | 一种提高静态随机储存器读出冗余度的方法 |
US9595607B2 (en) * | 2015-07-27 | 2017-03-14 | City University Of Hong Kong | Facilitation of increased locking range transistors |
CN106298738A (zh) * | 2016-08-30 | 2017-01-04 | 绍兴嘉恒创能电子科技有限公司 | Cmos存储器单元无导线隐形供电方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW417296B (en) * | 1999-07-14 | 2001-01-01 | Taiwan Semiconductor Mfg | Vertical poly-silicon resistor of SRAM and its manufacture mathod |
US6358808B1 (en) * | 1997-01-16 | 2002-03-19 | Nec Corporation | Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
CN101252132A (zh) * | 2007-02-22 | 2008-08-27 | 富士通株式会社 | 半导体存储器件及其制造方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6358808B1 (en) * | 1997-01-16 | 2002-03-19 | Nec Corporation | Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
TW417296B (en) * | 1999-07-14 | 2001-01-01 | Taiwan Semiconductor Mfg | Vertical poly-silicon resistor of SRAM and its manufacture mathod |
CN101252132A (zh) * | 2007-02-22 | 2008-08-27 | 富士通株式会社 | 半导体存储器件及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140520 |
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Effective date of registration: 20140520 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |