CN101630813B - Light emitting device - Google Patents

Abstract

The present invention provides a light emitting device comprising: an excitation light source which radiates excitation light; a wavelength converting member which absorbs and converts the wavelength of at least part of the excitation light radiated from the excitation light source, and releases light with a predetermined wavelength band; a light guide for guiding the excitation light radiated from the excitation light source to the wavelength converting member, with one end at the excitation light source and the other end at the wavelength converting member, wherein the refractive index of the cross-sectional center region (core) is higher than that of the circumferential region (clad); and a thermally conductive transparent film which contacts with the wavelength converting member.

Description

Light-emitting device

The application be that December 2, application number in 2005 are 2005101289819 the applying date, name is called the dividing an application of application of " light-emitting device ".

Technical field

The present invention relates to light-emitting device, be specifically related to mainly have excitation source, the light-emitting device of wavelength conversion parts, photoconductive tube (light guide).

Background technology

In the past, in endoscope apparatus, fibrescope etc., required correctly to reproduce the light of look information with high brightness.

For this reason,, propose to replace xenon lamp etc., adopt light-emitting diode (LED), laser diode element semiconductor light-emitting elements such as (LD) (for example, the spy opens 2002-95634 communique and special table 2003-515899 communique) as above-mentioned light source.

Semiconductor light-emitting elements, small-sized, electrical efficiency is high, luminous with chromatic colour, do not worry that ball is cut.Especially, because the luminous intensity of semiconductor laser is much higher than light-emitting diode, so can realize the light source that illumination is high.

Generally, correctly reproduce look information, need combination multi-wavelength's light to obtain white light in order to adopt semiconductor light-emitting elements.

For this reason, usually, the wavelength conversion parts that are made of fluorescent material and resin etc. are adopted in combination in semiconductor light-emitting elements.

But, because the optical density of semiconductor light-emitting elements is very high, so the resin of formation wavelength conversion parts and fluorescent material etc. are because of highdensity exciting light generates heat, deterioration.Therefore, also there is the life-span reduction cause light-emitting device itself, or can not fully releases problems such as light to the outside from semiconductor light-emitting elements.

In addition, because it is narrow that laser diode and light-emitting diode are compared full width at half maximum, therefore adopting red, green, blue look laser diode to realize in the endoscope apparatus in the past of white light source, because of the intensity difference of each laser diode, be easy to generate tone variation, cause the problem of color reproduction difference.In addition, because endoscope apparatus in the past needs 3 kinds of laser diodes at least, so the white light that will obtain stipulating must be controlled the output of each laser diode, the problem that it adjusts difficulty appears.In addition, laser diode is compared with light-emitting diode, because angle of visibility is narrow, the luminous intensity of frontal is high, so even white light also occurs having the problem of different tones because of the configuration skew a little of laser diode.

Summary of the invention

The objective of the invention is, the light-emitting device of a kind of high life is provided, can adopt the good semiconductor light-emitting elements of luminous efficiency, prevent to constitute the deterioration of the parts of light-emitting device.

In addition, another object of the present invention is, a kind of high performance light-emitting device that satisfies high-luminous-efficiency of the light that can send out brightness high is provided.

The invention provides a kind of light-emitting device, its formation comprises:

Penetrate the excitation source of exciting light;

The wavelength conversion parts partially absorb, wavelength conversion is from the exciting light that this excitation source penetrates, and emits the light in provision wavelengths zone at least;

Photoconductive tube at one end has described excitation source, has described wavelength conversion parts at the other end, increases the refractive index of the central part (core) of section than periphery (covering), will derive to the wavelength conversion parts from the exciting light that this excitation source penetrates;

The thermal conductivity light-transmissive film that contacts with described wavelength conversion parts.

In addition, the invention provides a kind of light-emitting device, by the excitation source that penetrates exciting light, flexible ground length direction being used to of prolonging transmit the exciting light that penetrates from described excitation source photoconductive tube and via described photoconductive tube absorb, wavelength conversion is from the exciting light of described excitation source ejaculation, the light wavelength transform component of emitting the provision wavelengths zone constitutes, wherein:

Described photoconductive tube is penetrating a side of exciting light, have than with the end face of the bigger area of the area of section that intersects vertically at length direction, and support by the photoconductive tube front end component;

At least a portion of described photoconductive tube and photoconductive tube front end component is covered by the wavelength conversion parts.

In addition, the invention provides a kind of light-emitting device, have light-emitting component, possess incident and come the outgoing end of the incident end of light of self-emission device and emergent light and flexible the photoconductive tube that extends, transmission transparent member from the light of photoconductive tube outgoing, described light-emitting device has the photoconductive tube front end component, the side of the outgoing end side of this photoconductive tube front end component lining photoconductive tube, become at least one sidewall simultaneously as the recess of bottom with the outgoing end of photoconductive tube

Described transparent member extension is located on the described recess.

According to light-emitting device of the present invention owing to contact, possess the thermal conductivity light-transmissive film with the wavelength conversion parts, so can very easy discharge in the heat of wavelength conversion parts generation, the deterioration that can effectively prevent to generate heat and cause.That is, usually, because of resulting from the heat of heating of excitation source itself, deteriorations such as the fluorescent material of wavelength conversion parts etc. or resin.But, in light-emitting device of the present invention, adopt the excitation source of high output, shine the light of high light intensity continuously, but by adopting photoconductive tube, can the wavelength conversion parts be set with position that excitation source fully separates.In addition,, possess the thermal conductivity light-transmissive film, can remove the heat that produces at the wavelength conversion parts effectively, can prevent to constitute the heating and the deterioration of the fluorescent material of wavelength conversion parts itself by this film by contacting with the wavelength conversion parts.

In addition, according to light-emitting device of the present invention, can prevent to constitute the deterioration that the heating of the material of wavelength conversion parts causes effectively, and can increase substantially light output.Think that this is to be had than the wide area of area of section that intersects vertically with length direction by the light emitting side end face by photoconductive tube, reduce optical density, with at least a portion that covers the photoconductive tube front end component by the wavelength conversion parts, the effect that multiplies each other that the heat that produces at the wavelength conversion parts to the discharge of photoconductive tube front end component, and at least a portion of the light of wavelength conversion effectively is reflected in the end of photoconductive tube front end component forms.

Description of drawings

Fig. 1 is the concise and to the point pie graph that is used to illustrate the structure of light-emitting device of the present invention.

Fig. 2 is the concise and to the point pie graph of structure that is used for illustrating the photoconductive tube front end component of light-emitting device of the present invention.

Fig. 3 be expression in the light-emitting device of the present invention photoconductive tube and the concise and to the point pie graph of photoconductive tube front end component.

Fig. 4 is used for illustrating the transparent member of light-emitting device of the present invention or the sketch of wavelength conversion configuration of components.

Fig. 5 is the concise and to the point pie graph of structure that is used for illustrating the wavelength conversion parts of light-emitting device of the present invention.

Fig. 6 is the concise and to the point pie graph of structure that is used for illustrating the photoconductive tube front end component of light-emitting device of the present invention.

Fig. 7 is near the profile of the structure in the outgoing end of the photoconductive tube in the expression execution mode.

Fig. 8 is the relative intensity in the light-emitting device of expression embodiment and the graph of relation of light output.

Fig. 9 is the concise and to the point pie graph of formation of photoconductive tube end that is used for illustrating the light-emitting device of embodiment.

Figure 10 is the curve chart of relation of the light beam-input electric current of the light-emitting device of expression among the embodiment.

Figure 11 is the curve chart of relation of the light beam-input electric current of the light-emitting device of expression among the embodiment.

Figure 12 is the curve chart of relation of the light beam-input electric current of the light-emitting device of expression among the embodiment.

Figure 13 is the curve chart of relation of the light beam-drive current of the light-emitting device of expression among the embodiment.

Figure 14 is the concise and to the point pie graph of combining structure that is used for illustrating the unit of light-emitting device of the present invention.

Embodiment

Light-emitting device of the present invention for example, as shown in Figure 1, mainly is made of excitation source 10 (light-emitting component 11), photoconductive tube (light guide) 20, transparent member 300 (wavelength conversion parts 30).

Excitation source

Excitation source as shown in Figure 1, has light-emitting component 11 etc., constitutes for the mode of photoconductive tube 20 the light that penetrates from light-emitting component 11 can be derived from injection part 12.

Excitation source is the light source that penetrates exciting light.Exciting light herein, usually, so long as can excite the light of fluorescent material described later, which kind of light can.As excitation source, can use the device as the energy with semiconductor light-emitting elements, lamp etc. and electron beam, plasma, EL etc.Wherein, preferably adopt semiconductor light-emitting elements.Because semiconductor light-emitting elements luminous intensity height is so can access small-sized, the high light-emitting device of electrical efficiency.In addition, can access light-emitting device initial stage drive characteristic excellence, anti-vibration or the anti-repetitive operation of turning off the light of lighting a lamp.Semiconductor light-emitting elements can be enumerated light-emitting diode (LED), laser diode (LD) etc., wherein laser diode preferably.Thus, can access light-emitting device with high luminous output.For example, the element that preferably can outgoing has the light of main light emission peak value wavelength in the scope of 350nm～550nm.Thus, as described later, can use the good fluorescent material of wavelength conversion efficient, its result can access the high light-emitting device of luminous output, can access the light of multiple color tones simultaneously.In addition, the deterioration of wavelength conversion parts described later can be prevented, the light-emitting device of high life and high reliability can be accessed.

Semiconductor light-emitting elements is usually by constituting at substrate superimposed layer semiconductor layer.

As substrate, for height forms the good nitride-based semiconductor of crystallinity in property ground in batches, preferably adopting with C face, R face or A face is the sapphire substrate of interarea.In addition, for example, also can adopt with any one side of C face, R face or A face is the spinelle (MgAl of interarea ₂O ₄) such insulating properties substrate, SiC (comprising 6H, 4H, 3C), ZnS, ZnO, GaAs, Si, GaN and the oxide substrate integrated with the nitride-based semiconductor lattice etc., but growing nitride semi-conductive in the past known to the material different with nitride-based semiconductor.In addition, substrate also can be implemented drift angle (offangle), if at the substrate that adopts stage shape drift angle in such cases, since the substrate layer that can the growth of high crystalline ground constitutes by gallium nitride, therefore preferred employing.

Under the situation that adopts the substrate different with nitride-based semiconductor, behind the nitride-based semiconductor (resilient coating, substrate layer etc.) of the substrate layer before on this dissimilar substrate, being grown to serve as component structure and forming, remove dissimilar substrate by utilizing methods such as grinding, (for example also can be used as nitride-based semiconductor, GaN) monomer substrate, in addition, also can after forming, remove component structure dissimilar substrate.

By on dissimilar substrate, forming resilient coating (low-temperature epitaxy layer) and/or waiting the substrate layer of formation by nitride-based semiconductor (preferred GaN), the nitride-based semiconductor of the composed component structure of can growing well, by the pn knot that constitutes by nitride-based semiconductor so, the light of luminous ultraviolet region expeditiously.

As resilient coating, for example, can enumerate low-temperature epitaxy GaN, AlN, GaAlN etc. and become the layer of on-monocrystalline.

As the substrate layer (growth substrate) that is located on the dissimilar substrate, also can carry out ELOG (Epitaxially Laterally Overgrowth).For example, can utilize the difficulty semi-conductive diaphragm of growing nitride (for example, SiO in its surface by any growing nitride semiconductor layer on dissimilar substrate ₂Deng), form the masks area (for example, with the オ リ Off ラ face of substrate generally perpendicularly) of striated etc., be formed for the semi-conductive non-masks area of growing nitride simultaneously, the growing nitride semiconductor layer is realized on this diaphragm.By from non-masks area growing nitride semiconductor,, promptly,,, can form the semiconductor layer of general planar at masks area also growing nitride semiconductor also to horizontal growth except that to the film thickness direction growth according to growth selectively.Perhaps, can comprise that forming nitride-based semiconductor on the substrate of this peristome realizes by on the nitride semiconductor layer that is grown on the dissimilar substrate, forming peristome.That is, carry out from the growth of peristome side to horizontal nitride-based semiconductor, the result can form the semiconductor layer of general planar.

Be formed on the semiconductor layer on substrate so, the multiple semiconductors such as BN, SiC, ZnSe, GaN, InGaN, InAlGaN, AlGaN, BAlGaN, BInAlGaN of can giving an example.Equally, by in these elements, containing Si, Zn etc. as impurity element, also can be as luminescence center.

Especially, but (for example as the short wavelength that can make visible light from the ultraviolet region of high efficiency fluorescence excitation material, blue system) material of the luminescent layer of high efficiency light-emitting, nitride-based semiconductor is arranged, (for example wherein be more suitable for giving an example the III nitride-based semiconductor, the nitride-based semiconductor that contains Al, Ga contains the nitride-based semiconductor of In, Ga, In _XAl _YGa _1-X+YN, 0≤X, 0≤Y, X+Y≤1).In addition, also can use B, P displacement one one of gallium nitride compound semiconductor.By suitable semi-conductive kind or its mixed crystal ratio set, can adjust the emission wavelength of the light-emitting component that obtains.For example, by composition according to active layer, in 350～550nm scope, preferred 350～500nm scope, more preferably 360～500nm scope changes the content of the In of active layer, can obtain having the light of main light emission peak value wavelength in 420～490nm scope.

Semiconductor layer also can be a single layer structure, but be fit to adopt homostyructure, heterostructure or double-heterostructure with MIS joint, PIN joint, PN junction etc.In addition, also can be laminated construction, the superstructure of multilayer, also can be single quantum well structure or the multiple quantum trap structure on the film of being stacked in that produces quantum effect.

As semiconductor layer, for example, the 1st contact layer that the lamination successively of can giving an example is formed by n type gallium nitride, the 1st covering that forms by n type aluminium gallium nitride alloy, multilayer laminated trap layer that forms by indium nitride gallium aluminium or InGaN and the barrier layer that forms by aluminium gallium nitride alloy or GaN and the active layer of the multiple quantum trap structure that forms, the 2nd covering that forms by p type aluminium gallium nitride alloy, double-heterostructure of the 2nd contact layer that forms by p type gallium nitride etc.

These semiconductor layers for example, can utilize Organometallic Chemistry vapor growth method (MOCVD), halide vapour phase epitaxy method (HVPE), molecular beam epitaxial growth method technique known such as (MBE) to form.The film thickness of semiconductor layer does not limit especially, can adopt multiple film thickness.

In addition, nitride-based semiconductor is with the state demonstration n type conductivity of the impurity that undopes.For improving luminous efficiency etc., when forming n type nitride-based semiconductor, as n type dopant, preferred suitable Si, Ge, Se, Te, the C etc. of importing.In addition, when forming p type nitride-based semiconductor, as p type dopant, preferred doping of Zn, Mg, Be, Ca, Sr, Ba etc.For example, as impurity concentration, can enumerate 10 ¹⁵～10 ²¹/ cm ³Scope, especially can enumerate 10 as contact layer ¹⁷～10 ²⁰/ cm ³Scope.Because just nitride-based semiconductor doped p type dopant is difficult to the p typeization,, make its low resistanceization so preferably behind the doped p type dopant, utilize stove heating or plasma irradiation etc.

For example, on substrate, at random via resilient coating, forming n type nitride semiconductor layer is that n type contact layer, crackle prevent layer, covering, n type covering and n type light waveguide-layer.Other layer except that n type covering also can omit according to element.N type nitride semiconductor layer needs to have the wide band gap of specific activity layer at least in the part that contacts with active layer, therefore, preferably comprises the composition of Al.For example, the n type Al that can give an example _yGa _1-yN (0≤y＜1) layer (also can be different) in each layer y value.Each layer on one side also can grow by one side Doped n-type impurity, forms the n type, also can grow with undoping, forms the n type.

On n type nitride semiconductor layer, form active layer.Active layer preferably has the order by barrier layer/trap layer/barrier layer, and suitably number of times ground alternately repeats lamination In _X1Al _Y1Ga _1-x1-y1N trap layer (0≤x ₁≤ 1,0≤y ₁≤ 1,0≤x ₁+ y ₁≤ 1) and In _X2Al _Y2Ga _1-x2-y2N barrier layer (0≤x ₂≤ 1,0≤y ₁≤ 1,0≤x ₁+ y ₁≤ 1, x ₁＞x ₂) the MQW structure, usually, the two ends of active layer all become the barrier layer.

Non-impurity-doped ground forms the trap layer.In addition, except that with the final barrier layer of p type nitride semiconductor layer adjacency, n type impurity (preferred 1 * 10 such as Si, Sn mix on whole barrier layers ¹⁷～1 * 10 ¹⁹Cm ^-3), non-impurity-doped ground forms final barrier layer.In addition, on final barrier layer, from the p type impurity (for example, 1 * 10 such as p type nitride semiconductor layer diffusion Mg of adjacency ¹⁶～1 * 10 ¹⁹Cm ^-3).By removing Doped n-type impurity on the barrier layer on final barrier layer, the initial stage electron concentration in the active layer increases, and efficient from electronics to the trap layer that inject improves, thereby improves the luminous efficiency of laser.In addition, because final barrier layer all is positioned at p type nitride semiconductor layer side, therefore can not expresses and inject electronics to the trap layer.Therefore, without hesitation not to final barrier layer Doped n-type impurity, by utilizing the diffusion from p type nitride semiconductor layer, doped p type impurity also can improve to the hole of trap layer injection efficiency in fact.In addition, by not to final barrier layer Doped n-type impurity, can prevent that there is veriform impurity in mixing in the barrier layer, in order to avoid reduce the degree of excursion of charge carrier.But, in the final barrier layer of growth, also can be by 1 * 10 ¹⁹Cm ^-3Following concentration is grown while mixing.Because the gas etching when final barrier layer suppresses the growing p-type nitride semiconductor layer is therefore preferred than other barrier layer thickening ground formation to the influence of the decomposition of the active layer that contains In.For example, preferably 1.1～10 of other barrier layer times, be more preferably 1.1～5 times.

On final barrier layer,, form p type electrons layer, p type photoconductive layer, p type covering, p type contact layer as p type nitride semiconductor layer.Layer except that p type covering also can omit according to element.P type nitride semiconductor layer need have the wide band gap of specific activity layer in the part that contacts with active layer at least, therefore, preferably comprises the composition of Al.For example, the p type Al that can give an example _zGa _1-zN (0≤z＜1) layer (also can be different) in each layer z value.Thus, form so-called double-heterostructure.In addition, each layer on one side also can grow by one side doped p type impurity, forms the p type, also can form the p type by other layer diffusion p type impurity from adjacency.

P type electrons layer compares the high p type nitride semiconductor layer of p type covering by the mixed crystal of Al and constitutes, and preferably has by Al _xGa _1-xThe composition that N (0.1＜x＜0.5) constitutes.In addition, with high concentration, preferably with 5 * 10 ¹⁷～1 * 10 ¹⁹Cm ^-3P type impurity such as doped in concentrations profiled Mg.Thus, p type electrons layer can seal electronics effectively in active layer, reduces the threshold value of laser.In addition, p type electrons layer, as long as by 30～

The film growth of scope just can, so long as film just can be grown under the low temperature lower than p type light waveguide-layer or p type light covering.Therefore, by forming p type electrons layer, compare when directly on active layer, forming p type light waveguide-layer etc., can suppress to comprise the decomposition of the active layer of In.

In addition,, also can adopt (in the way of p type light waveguide-layer) formation ridged striped above active layer,, the semiconductor Laser device of resonator end face is set simultaneously with light waveguide-layer clamping active layer as semiconductor light-emitting elements.In addition, also can form diaphragm, p electrode, n electrode, p block type electrode, n block type electrode etc.

Especially, be formed on the 2nd electrode on the 2nd contact layer,, preferably roughly be formed on whole as Ohm contact electrode.In addition, preferred the 2nd electrode regulating become its pellet resistance Rp and the 1st contact layer for example the pellet resistance Rn of n type contact layer become the relation of Rp 〉=Rn.Usually, because n type contact layer for example press thickness 3～10 μ m and then form by 4～6 μ m, thereby its sheet resistor Rn is estimated as 10～15 Ω/, so preferably Rp is formed on the film in the mode with the pellet resistance value more than it.Specifically can give an example below the 150 μ m.

So, when p electrode and n type contact layer are concerning of Rp 〉=Rn, in order to make electric current to the whole diffusion of p layer on the p electrode, make whole active layer luminous expeditiously, the preferred setting has the p lateral mass shape electrode that prolongs conducting part.Thus, can further seek the raising of outside quantum effect.The shape that prolongs conducting part does not limit especially, the linearity of for example can giving an example, curve-like, clathrate, branch-like, hook-shaped, netted etc.If, can reduce the area of shading, so preferred owing to adopt these shapes.P lateral mass shape electrode owing to increase interception with its gross area, so the preferred mode that is no more than luminous reinforced effects with interception designs live width and length with being directly proportional.

In addition, preferably utilize translucent material to form the 2nd electrode.For example, can give an example ITO, ZnO, In ₂O ₃, SnO ₂, contain the monofilm or the multilayer film of a kind the metal or alloy of from the group of gold and platinum family element, selecting.Especially using by containing under the situation that multilayer film that a kind metal or alloy selecting from the group of gold and platinum family element and at least a kind of other element constitute or alloy form, can be according to the contained gold and the content of platinum family element, adjust the pellet resistance Rp of p electrode, can improve the stability and the reproducibility of electrode.But, gold or platinum metallic element, because the absorption coefficient height in the wavelength region may territory of 300～550nm, so can improve permeability by the addition that reduces them.The relation of Rp and Rn, the state of the light intensity distributions in the time of can be from light-emitting component luminous is judged.

As substrate, under the situation that adopts the insulating properties substrate, from the face side etching of the 2nd contact layer, the 1st contact layer is exposed, on the 1st and the 2nd contact layer, form the 1st and the 2nd electrode respectively,, can form the light-emitting component that constitutes by nitride-based semiconductor by cutting into shaped like chips.In addition,, do not need can on the surface of the 2nd contact layer, form the 2nd electrode yet, form the 1st electrode at the back side of substrate for exposing the etching of the 1st contact layer from the 2nd contact layer face side removing the insulating properties substrate or adopting under the situation of conductive board.

Photoconductive tube

Photoconductive tube possesses the incident end of incident light and the outgoing end of emergent light, has the length of regulation, is used for giving transparent member or wavelength conversion parts with the photoconduction from excitation source (light-emitting component) outgoing.

Photoconductive tube owing to can freely change its length, can freely change its shape simultaneously, especially can make its right angle bending or bending, so can derive light to the position of regulation.Therefore, so long as can so carry out, adopting which kind of material and constitute can.Especially, consider, preferably do not subtract with declining and transmit from the photoconductive tube of the light of excitation source outgoing from the viewpoint of energy efficiency.

As photoconductive tube, for example, can transmit the superfine glass fibre of light time for example as light transmission path, can adopt combination to have the glass fibre and photoconductive tube of high index of refraction, or adopt the photoconductive tube of the high parts of reflectivity with glass fibre of low-refraction.Wherein, preferably use periphery (covering) to surround the photoconductive tube of dual structure of the central part of section, consider from can not subtracting the viewpoint that transmits on the light signal ground that declines, more preferably the high photoconductive tube of refractive index of the refractive index ratio covering of core.Photoconductive tube, from the viewpoint of the optical density that is reduced in the photoconductive tube end face, the occupation rate of preferred core is higher than the occupation rate of covering.In addition, from preventing to consider that to the viewpoint of photoconductive tube back light preferred covering footpath is little.For example, can give an example below the core diameter 1000 μ m, below (comprising core diameter) the 1200 μ m of covering footpath, below the preferred core diameter 400 μ m, below (comprising core diameter) the 450 μ m of covering footpath.Specifically, the photoconductive tube of core/covering=114/125 (μ m), 72/80 (μ m) etc. for example.

Photoconductive tube can be a single fiber, also can be plurality of fibers, but single fiber preferably.In addition, also can be the fiber of single-mode, but multi-mode fiber preferably.

The material of photoconductive tube does not limit especially, for example, and can give an example quartz glass, plastics etc.Wherein, the material of preferred core is made of pure silicon dioxide (pure quartz).Thus, can suppress to transmit loss.

The incident end of photoconductive tube and the shape of outgoing end do not limit especially, can set plane, convex lens shape, concave mirror shape, part for concavo-convex multiple shapes such as shape are set.Especially, photoconductive tube also can be in the end of configuration transparent member described later or wavelength conversion parts, from the both sides of the outstanding core of photoconductive tube front end component or covering and core.Thus, owing to can increase the emittance area of light in the photoconductive tube end, so can reduce optical density more.In addition, even when the twocouese length direction of core and covering exposes, owing to send a part of light from covering, so optical density also reduces.A part of exposing covering, or expose core from covering, for example available wet etching or known method such as dry etching, grinding are carried out.

In addition, in this manual, the outgoing end of so-called photoconductive tube, the part of the emergent light on the limitation ground finger ends not necessarily refers to the end of a side of emergent light all the time.Specifically be, for example, cover under the situation of the fiber optics that the mode of core constitutes in inside adopting as photoconductive tube with covering that the part of emergent light mainly is a core, but in this manual, the end of a side that will comprise the emergent light of core and covering is defined as the outgoing end.The incident end too.

In addition, photoconductive tube, viewpoint from the optical density that reduces the photoconduction pipe end, shown in Fig. 2 (a) and Fig. 2 (b), for example only at the end core diameter of photoconductive tube 20,120 photoconductive tube wideer than the central part of core 20a, 120a, for example TEC fiber (footpath of covering 20b is fixed), tapered fibre (footpath of covering 120b is a cone-shaped) etc. have the photoconductive tube of core diameter of 1.05～2.0 times of degree of the core diameter of central part in the end.Thus, can prevent to be configured in the deterioration of the fiber on the photoconductive tube end itself.And then, can prevent to be configured in the deterioration of transparent member on the photoconductive tube end or wavelength conversion parts etc., simultaneously equably high efficiency to transparent member or wavelength conversion parts irradiates light.

In addition, also can adopt and be called calibration guiding, photonic band-gap, hole acceleration etc., the airport that has more than 1 at its core or covering is the photon fiber (reference in air hole, distant mountain is repaiied. " photonic crystal fiber " the 31st light wave Research on Sensing meeting (Proc.of 31st Meeting onLightwave Sensing Technology), LST31-14, pp.89-96, on June 6th, 2003; Photonic crystal fiber DIAGUIDEORPCF, electric wire Co., Ltd. of Mitsubishi produces catalogue, No.6-184 (2003.01) etc.).Photonic crystal fiber immerses the air hole in order to prevent moisture etc., with the parts lining end of regulation.Therefore, send the light of photoconductive tube to, emit than core easily widely in its end.In a word, owing to can both reduce optical density, so obtain adopting effect of the present invention easilier in the photoconductive tube end.

In addition, same with photonic crystal fiber etc. by with light catheter proximal end parts lining end even have on the common photoconductive tube of a sizing at core and/or covering, can emit light than core in the photoconductive tube end widely, can reduce optical density.Herein, the thickness of photoconductive tube front end component and material only otherwise hinder emitting of light, just do not limit especially.

In addition, from other viewpoint, photoconductive tube promptly in a side of outgoing exciting light, has the wide section of area of section that area and length direction intersect vertically in an end of configuration transparent member or wavelength conversion parts.Promptly, at the local of photoconductive tube end face or all, (for example can set the face that has to tilt with respect to cross section X ° (0＜X≤90) of photoconductive tube, with reference to Fig. 3 (a)～(g), (r), (t), (u) 20) formation, (for example have curved surface, with reference to Fig. 3 (h), (j), (l) (q) 20 etc.) formation, formation that length direction has breach (for example, with reference to Fig. 3 (s) 20 etc.) etc.Specifically be that preferably with respect to the cross section, with more than 5%, more than 10%, more than 15%, more than 20%, more than 30%, the mode of surface area that increases the end face of an end has inclination, it is curved, concavo-convex etc. to bend.

Transparent member/wavelength conversion parts

Transparent member is the parts that see through from the light of exciting light (light-emitting component).For example, be fit to adopt inorganic substances such as unorganic glass, low-melting glass, sintered glass ceramics, yttria colloidal sol, alumina sol, silicon dioxide gel, polyene is resin, polycarbonate resin, polystyrene resin, epoxy resin, allyl resin, acrylate, methyl-propyl resin, (PMMA etc.), mylar, polyimide resin, poly-norbornane resin, fluororesin, silicones, modified silicone resin, weave into a kind of epoxy resin etc. or 2 kinds with organic substances such as first-class resin, liquid crystal polymers.Excellent materials such as wherein preferred thermal endurance, light resistance, light transmission.Since fluororesin, silicones (resin that especially the dimethyl hexamethylene is siloxane-based, the poly-hexamethylene of methyl is siloxane-based etc.) etc. have to a certain degree with respect to the durability of light and heat and the easiness of formation, so preferably this is a resin.By adopting transparent member, can control the directive property of light.

In transparent member, as wavelength shifter, also can contain fluorescent material, pigment etc., and filler etc.

The wavelength conversion parts for example are made of fluorescent material, pigment etc., absorb at least a portion from the light of excitation source (light-emitting component), and wavelength conversion is become different wavelength region may territories, can emit the light that has luminescent spectrum in redness, green, blueness etc.Especially, by adopting fluorescent material, can access at luminosity and all good light-emitting device of color rendering both sides.

The wavelength conversion parts also can in fact only be made of fluorescent material as wavelength shifter.In such cases, the deterioration that the exciting light of irradiation high light intensity can be caused is controlled at irreducible minimum.In addition, also above-mentioned transparent member can be contained, and then also filler can be contained.

When transparent member contains wavelength shifter (or wavelength conversion parts), by synthetic from excitation source (light-emitting component) light and from the light of the wavelength shifter more than 1, or synthetic light from the wavelength shifter more than 2, also can set white light for.For obtaining color rendering, preferably estimating number (Ra) by the average colour developing of irradiates light is more than 70 and then 80 above materials formations.

Herein, so-called color rendering, the character with this light source of the outward appearance of the color of the object of certain light source irradiation is controlled in expression, so-called color rendering is good, and general expression is very near character (reference, (strain) ohm company of the outward appearance of the color of the object of solar light irradiation, " fluorophor handbook ", p429).Color rendering can adopt luminescent coating to improve by combination in light-emitting component.In addition, number (Ra) is estimated in so-called average colour developing, is that the mean value of the aberration when throwing light on 8 kinds of colour charts separately by sample light source and reference light source is that the basis is obtained.

The tone of gained light for example can be adjusted by the light of combination three primary colors (blue, green, redness).In addition, also can adjust by blueness and light red, dark green and red, green and redness or 2 looks such as livid purple look and yellow green that combination has a complementary color relation.Herein, so-called complementary color, expression is pressed chromatic diagram and is inserted white point, is positioned at 2 looks of opposition side mutually.In addition, in the present invention, the look of light and the relation of wavelength are according to JIS Z8110.

Transparent member is the parts that make the light transmission of self-emission device, but a part of light is become heat by the absorption of not transmission ground.In addition, when transparent member contained wavelength shifter, a part of light that wavelength shifter absorbs is wavelength conversion and become heat not.In addition, photoconductive tube, owing to derive light, thin simultaneously to flexible degree, so light concentrates on the transparent member or wavelength conversion parts that is configured in the outgoing end, heating thereupon is remarkable.So, the present invention is thin to having below the preferred 3000 μ m in employing, more preferably below the 1000 μ m, most preferably below the 400 μ m, in the formation of the photoconductive tube of the flexible degree of the diameter that the most preferred 200 μ m are following, very effective.

In addition, because the heat of the wavelength shifter that light forms is usually much larger than the heat of transparent member, so that the present invention has at transparent member under the situation of wavelength shifter is effective especially.

In addition, contain at transparent member under the situation of wavelength shifter ground formation, preferably by the scope of 0.1～10: 1 weight ratio, and then by 0.5～10: 1,1～3: 1,1.5～2.5: the scope of 1 weight ratio, mixed wavelengths coversion material (fluorescent material etc.) and transparent member (resin).But as described later, when containing wavelength shifter with laminated construction formation, the fluorescent material on each layer etc. are also not necessarily identical with the ratio of resin.For example, consider the character such as thermal endurance, light resistance, refractive index of fluorescent material, resin etc. itself, can suit to adjust used material and ratio thereof.

The shape of transparent member or wavelength conversion parts does not limit especially, can set multiple shapes such as convex lens shape for.Transparent member or wavelength conversion parts, preferably with the photoconductive tube that not only is covered, and the mode of at least a portion of the photoconductive tube front end component described later that is covered disposes.For example, shown in Fig. 4 (a)～Fig. 4 (1), can set multiple shape for.In addition, the preferably whole end face by transparent member and wavelength conversion parts lining photoconductive tube front end component and photoconductive tube etc., the contact area of increase and transparent member or wavelength conversion parts as far as possible.Thus, can obtain effect of the present invention easilier.

(fluorescent material)

As fluorescent material,, do not limit especially, but preferably with respect to each exciting light, a kind and 2 kinds of fluorescent materials are adopted in combination at least so long as can activate with excitation source.For example, can enumerate:

(i) alkaline-earth metal halogen apatite,

(ii) alkaline-earth metal boric acid halogen,

(iii) the alkali earth metal aluminate fluorescent material,

(iv) nitrogen oxide or nitride,

(v) alkaline-earth silicate, alkaline earth silicon nitride,

(vi) sulfide,

(vii) the alkaline earth thiosalt,

(viii) the germane hydrochlorate,

(ix) rare earth aluminate,

(x) rare earth silicate,

(xi) the multiple fluorescent materials such as organic or organic complex that mainly activate with lanthanide series such as Eu.

As (i) alkaline-earth metal halogen apatite fluorescent material, preferred main element with transition metal series such as group of the lanthanides such as Eu, Mn activates, and for example can give an example:

M ₅(PO ₄) ₃X:R _E

(M, can from Sr, Ca, Ba, Mg, Zn, select for example more than at least a kind.X, be from F, Cl, Br, I, select more than at least a kind.R _E, be Eu and/or Mn.) etc.

For example, give an example calcium chlorapatite (CCA), barium chlorapatite (BCA) etc., Ca specifically gives an example ₁₀(PO ₄) ₆Cl ₂: Eu, (Ba, Ca) ₁₀(PO ₄) ₆Cl ₂: Eu etc.

As (ii) alkaline-earth metal boric acid halogen fluorescent material, for example, can give an example:

M ₂B ₅O ₉X:R _E

(M, X and R _EWith above-mentioned synonym.) etc.

For example, illustration barium chlorapatite (BCA) etc., Ca specifically gives an example ₂B ₅O ₉Cl:Eu etc.

As (iii) alkali earth metal aluminate fluorescent material, the europium of can giving an example activate strontium aluminate (SAE), europium activated barium magnesate (BAM) or

SrAl ₂O ₄:R _E、

Sr ₄Al ₁₄O ₂₅:R _E、

CaAl ₂O ₄:R _E、

BaMg ₂Al ₁₆O ₂₇:R _E、

BaMgAl ₁₀O ₁₇:R _E

(R _EWith above-mentioned synonym.) etc.

As (iv) nitrogen oxide or nitride, preferred main with activated by rare earth elements, contain at least a kind of II family element and at least a kind of IV family element.The combination of these elements does not limit especially, for example, and can be for example by the following combination of representing of forming:

L _xJ _yO _zN _{((2/3) x+ (4/3) y-(2/3) z)}: R or

L _xJ _yQ _tO _zN _{((2/3)x+(4/3)y+t-(2/3)z)}:R

(L, at least a kind of II family element can from the group that constitutes by Be, Mg, Ca, Ba, Zn, selecting for example.J is at least a kind of IV family element selecting from the group that is made of C, Si, Ge, Sn, Ti, Zr, Hf.Q is at least a kind of iii group element selecting from the group that is made of B, Al, Ga, In.R is at least a kind of rare earth element selecting from the group that is made of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Lu, Sc, Yb, Tm.0.5＜x＜1.5、1.5＜y＜2.5、0＜t＜0.5、1.5＜z＜2.5。)

In the formula, at x, y, z under the situation of above-mentioned scope, exhibit high brilliance, especially because the nitrogen oxide fluorescent material represented with x=1, y=2 and z=2 demonstrates high brightness, so more preferably.But be not limited to above-mentioned scope yet, can use scope arbitrarily.

Specifically be, with α silicon aluminum oxygen nitrogen heat-stable ceramic as the nitrogen oxide fluorescent material of fertile material, with β silicon aluminum oxygen nitrogen heat-stable ceramic as the nitrogen oxide fluorescent material of fertile material, use CaAlSiN ₃: the Eu that the composition formula of Eu is represented activates aluminium nitride silicic acid calcium etc.

The nitride fluorescent material preferably utilizes activated by rare earth elements.This fluorescent material is the nitride fluorescent material that contains above-mentioned at least a kind of II family element, above-mentioned at least a kind of IV family element and N, can contain the nitride fluorescent material of B for example by the scope of 1～10000ppm.Perhaps, in the composition of nitride fluorescent material, also can contain aerobic.

Wherein, the nitride fluorescent material that constitutes by Ca and/or Sr, Si and N, for example nitrogenize calcium silicates (CESN), silicon nitride strontium (SESN), silicon nitride strontium acid calcium (SCESN), especially preferably activate with Eu, contain B's by the scope of 1～10000ppm.Also can be with above-mentioned at least a kind of rare earth element replacing section Eu.Ca and/or Sr one one also can be with above-mentioned at least a kind of II family element substitution.Also can be with above-mentioned at least a kind of IV family element substitution part Si.

Specifically, be to use

L _xJ _yN _{((2/3) x+ (4/3) y)}: R or

L _xJ _yO _zN _{((2/3)x+(4/3)y-(2/3)z)}:R

(L, J and R and above-mentioned synonym.X, y, z are 0.5≤x≤3,1.5≤y≤8,0＜z≤3.) the nitride fluorescent material of expression, preferably contain the fluorescent material of B by the scope of 1～10000ppm.

(v), can enumerate as alkaline-earth silicate, alkaline earth silicon nitride:

M ₂si ₅N ₈:Eu、

Msi ₇N ₁₀:Eu、

M _1.8si ₅O _0.2N ₈:Eu、

M _0.9si ₇O _0.1N ₁₀:Eu

(M and above-mentioned synonym.) etc.

As (vi) sulfide except that alkaline earth sulfides such as CaS:Eu, SrS:Eu, also can be enumerated La ₂O ₂S:Eu, Y ₂O ₂S:Eu, Gd ₂O ₂S:Eu, ZnS:Eu, ZnS:Mn, ZnCdS:Cu, ZnCdS:Ag, Al, ZnCdS:Cu, Al etc.

As (vii) alkaline earth thiosalt, can enumerate:

MGa ₂S ₄:Eu

(M and above-mentioned synonym.) etc.

As (viii) the germane hydrochlorate can be enumerated 3.5MgO0.5MgF ₂GeO ₂: Mn, Zn ₂GeO ₄: Mn etc.

As (xi) rare earth aluminate, preferred mainly activate with lanthanide series such as Ce, for example, and yttrium-aluminium-garnet (YAG), Luetcium aluminum garnet (LAG), concrete, remove Y ₃Al ₅O ₁₂: Ce, (Y _0.8Gd _0.2) ₃Al ₅O ₁₂: Ce, Y ₃(Al _0.8Ga _0.2) ₅O ₁₂: Ce, (Y, Gd) ₃(Al, Ga) ₅O ₁₂: Ce, Y ₃(Al, Sc) ₅O ₁₂: Ce, Lu ₃Al ₅O ₁₂: Ce (also comprises with Lu and partly or entirely replaces Y, partly or entirely replace Ce's with Tb.) outside, also can enumerate Tb ₃Al ₅O ₁₂: Ce, Gd ₃(Al, Ga) ₅O ₁₂: Ce etc.

As (x) rare earth silicate, Y can give an example ₂SiO ₅: Ce, Y ₂SiO ₅: Tb etc.

Organic or the organic complex as (xi) does not limit especially, can adopt any known yet.Preferably mainly activate, but also can adopt at least a kind that from the group that constitutes by above-mentioned rare earth element and Cu, Ag, Au, Cr, Co, Ni, Ti and Mn, selects, at random replace Eu or interpolation with lanthanide series such as Eu.

Wherein, preferred, the main rare earth aluminate fluorescent material that activates with the lanthanide series such as Ce of (ix), Y especially ₃Al ₅O ₁₂: Ce, (Y, Gd) ₃Al ₅O ₁₂: the YAG that the composition formula of Ce is represented is that fluorescent material (also comprises with Lu and partly or entirely replaces Y, partly or entirely replace Ce's with Tb.), main with the (iv) nitrogen oxide or the nitride fluorescent material of activated by rare earth elements, more preferably following general expression

L _xJ _yN _{((2/3) x+ (4/3) y)}: R or

L _xJ _yO _zN _{((2/3)x+(4/3)y-(2/3)z)}:R

(L, J and R, x, y, z and above-mentioned synonym.)。

Because the rare earth aluminate fluorescent material has high thermal endurance, thus stable light can be emitted, because wavelength conversion efficient height, so can take out light expeditiously.In addition, because the nitride fluorescent material by the optical excitation of the short wavelength side from the ultraviolet to the visible light, can be emitted the light of the long wavelength side of visible light, so can seek to improve color rendering.In addition, adopt these fluorescent materials by combination, for example can access average colour developing estimate number (Ra) more than 80, light that color rendering is high.

In addition, preferred following combination:

(i) CCA, (ii) CCB and (iii) at least a kind among the BAM and (ix) YAG combination,

(iii) SAE and (i) CCA:Mn combination,

(iii) SAE and (iv) SESN combination,

(iii) SAE and (iv) SCESN combination,

(iii) SAE and (iv) CESN combination,

(i) CCA, (ix) LAG and (iv) SESN combination,

(i) CCA, (ix) LAG and (iv) SCESN combination,

(i) CCA, (ix) LAG and (iv) CESN combination,

(i) CCA, (ix) LAG and (iv) CaAlSiN ₃: the combination of Eu,

(ix) LAG and (iv) SESN combination,

(ix) LAG and (iv) SCESN combination,

(ix) LAG and (iv) CESN combination,

(ix) LAG and (iv) CaAlSiN ₃: the combination of Eu etc.

Thus, can realize the both sides of high efficiency and high-color rendering.

In addition, consider, preferably contain a kind of fluorescent material that temperature characterisitic is good at least from another viewpoint.Herein, so-called " fluorescent material that temperature characterisitic is good ", the brightness the during room temperature (25 ℃) of expression and wavelength conversion parts is compared, though the rising of the temperature of the wavelength conversion parts that laser radiation causes, the also not significantly reduced meaning of brightness.Specifically, the wavelength conversion parts can be given an example, the brightness sustainment rate in the time of 200 ℃, brightness sustainment rate during with respect to room temperature more than 50%, preferred more than 60%, more than 65% or more than 70%.In addition, the brightness sustainment rate of wavelength conversion parts in the time of 300 ℃, the brightness sustainment rate during with respect to room temperature, for example more than 30%, preferred more than 35%, more than 40%, more than 45% or more than 70%.More preferably give an example, brightness sustainment rate in the time of 200 ℃, with respect to room temperature more than 50%, preferred more than 55%, more than 60% or more than 70%, and brightness sustainment rate in the time of 300 ℃, during with respect to room temperature more than 30%, preferred more than 35%, more than 40%, more than 45% or more than 50%.As fluorescent material so, LAG, BAM, YAG, CCA, SCA, SCESN, SESN, CESN and CaAlSiN typically can give an example ₃: Eu etc.Wherein, preferred LAG, BAM, BAM:Mn, CaAlSiN ₃: Eu etc.Thus, can realize higher brightness.

Fluorescent material for beyond the above-mentioned fluorescent material also can use to have same performance, the fluorescent material of effect.

In addition, adopt in combination under the situation of the fluorescent material more than 2 kinds, as described later, for example also can in the photoconductive tube front end component, add each fluorescent material separately, also can make up more than 2 kinds and be added in the photoconductive tube front end component.In such cases, the tone of wavelength that can be by used excitation source, luminous intensity, the light that will obtain etc., the suitable usage ratio of adjusting the fluorescent material of combination.

For example, adopting LAG and SESN, SCESN or CaAlSiN ₃: under the situation of the combination of Eu, preferably press the weight ratio of 50: 1～1: 50 scope, and then make up by the weight ratio of 30: 1～1: 30,50: 1～1: 1,30: 1～1: 1 scope.In addition, adopting LAG, CCA and SESN, SCESN or CaAlSiN ₃: under the situation of the combination of Eu, LAG and CCA preferably press the weight ratio of 1: 10～10: 1 scopes, and then press the weight ratio combination of 1: 5～5: 1,10: 1～1: 1,5: 1～1: 1 scope.LAG and SESN, SCESN or CaAlSiN ₃: Eu, can be for example and the scope of above-mentioned equal extent.

As the concrete mode of the wavelength conversion parts among the present invention, for example, preferred compositions is used LAG (green emitting) and SCESN or SESN (emitting red light).Thus,, the three primary colors of color can be guaranteed, the light of the good coloured light that turns white of color rendering can be accessed by the exciting light (for example, having the light-emitting component of glow peak in the scope of 430～500nm) of combined blue.

Preferably, combination (Sr, Ca) ₅(PO ₄) ₃Cl:Eu (blue-light-emitting), LAG or CaAlSiN ₃: Eu (from green jaundice coloured light), SCESN (emitting red light), or make up CCA, CCB, BAM (blue-light-emitting) and YAG (Yellow luminous), or dispose (blue-light-emitting), LAG (green emitting) and SCESN (emitting red light) such as using CCA, CCB or BAM successively from the incident light side.Thus, if combination has the light-emitting component of peak luminous wavelength of 360～420nm scope in the territory, short wavelength zone of visible light, can access the light of the good coloured light that turns white of color rendering.

In addition, light of all kinds by changing the mix proportion of used fluorescent material, can be realized desirable white light.Especially, under the situation of combination CCA etc. (blue-light-emitting) and YAG (Yellow luminous), for example preferably adopt 1～20: 1 weight ratio, more preferably 5～10: 1, can increase luminous efficiency thus.

In addition, preferred compositions adopts LAG (green emitting), SESN, SCESN or CaAlSiN ₃: Eu (emitting red light).Thus, (for example, 420～460nm) have the light-emitting component of peak luminous wavelength, can improve luminous efficiency more near being combined in 450nm.

In addition, when the fluorescent material of fluorescent material that makes up employing jaundice coloured light and burn red, by making up with near the light-emitting component that the 450nm on the territory, short wavelength zone of visible light, has peak luminous wavelength, the mixed light of the exciting light that penetrates from light-emitting component and the light of emitting from fluorescent material, from the wavelength conversion parts, derive to the outside as light.This light is the white light of red coloration.

In addition, when the fluorescent material that adopts from green jaundice coloured light, preferably with near the 450nm on the territory, short wavelength zone of visible light (440～470nm) for example the light-emitting component combination of 445nm with peak luminous wavelength adopt.Thus, can make up the exciting light that penetrates from light-emitting component and, thereby light becomes white light from the sodium yellow of exciting light conversion.So,, the absorption of the light when wavelength conversion can be avoided, luminous efficiency can be improved by utilizing an one of exciting light.

When fluorescent material from the fluorescent material of the coloured light that turns blue and jaundice coloured light is adopted in combination, by with near the light-emitting component combination that the 375nm on the ultraviolet range, has peak luminous wavelength, the white light of emitting from the wavelength conversion parts becomes light.Because eye be cannot see ultraviolet ray, so have only the light that becomes the fluorescent material of visible light to emit from wavelength conversion just to become light.

In addition, combination (1) near the 400nm on territory, the short wavelength of visible light zone (for example, 370～420nm) have the light-emitting component of peak luminous wavelength, (2) be used to light from this light-emitting component, turn blue coloured light (for example, 440～460nm) fluorescent material, (3) excited by blue light, glow green (for example, 520～540nm) fluorescent material, (4) excited by blue light, jaundice coloured light (for example, 550～580nm) fluorescent material, (5) excited by blue light, (for example, during 640～660nm) fluorescent material, the light of emitting from the wavelength conversion parts is mainly white light to burn red.Especially, preferably dispose above-mentioned fluorescent material in this order from the incident light side.By this combination, can improve luminous efficiency.Wherein, adopt in combination under the situation of (1), (2) and (4), can improve luminous efficiency more.In addition, when (1)～(3) and (5) are adopted in combination, can improve color rendering.In addition,,, only use by the light of fluorescent material conversion and obtain white, so, can adjust white intensity by light output variation color temperature, the chromaticity coordinate of light-emitting component owing to the exciting light that does not utilize light-emitting component as the colour content of light in such cases.

As pigment, for example, the fluorescent dyes such as dyestuff, perylene of can giving an example.

So fluorescent material, pigment etc. owing to do not form agglutination body, are brought into play the absorptivity and the conversion efficiency of light to greatest extent, thus adopt particle diameter at 1 μ m～20 mu m ranges usually, preferred 2 μ m～8 μ m, the more preferably scope of 5 μ m～8 μ m.In addition, so, by adopting the relatively large fluorescent material of particle diameter etc., the batch process that can improve light-emitting device.Herein, particle diameter refers to the average grain diameter that obtains with the air penetrant method.Specifically be under the environment of 25 ℃ of temperature, humidity 70%, to take by weighing 1cm ³The sample of degree, behind the special-purpose tubular container of packing into, the dry air of the certain pressure that flows reads specific area from difference gauge, is converted into the value of average grain diameter.

(filler)

Filler is used to make light reflection from external irradiation, at random.Thus, light is taken out dispersedly.In addition, can improve colour mixture, reduce the look inequality simultaneously equably to fluorescent material bump exciting light.In addition, owing to can adjust the viscosity of transparent member or wavelength conversion parts, therefore can be bonded in easily on photoconductive tube 20 or the photoconductive tube front end component.

As filler, can enumerate silicon dioxide (flue dust silicon dioxide, settleability silicon dioxide, fused silica, crystalline silica, ultra micro powder amorphous silica, silicic acid anhydride etc.), quartzy, titanium oxide, tin oxide, zinc oxide, tin monoxide, calcium oxide, magnesium oxide, beryllium oxide, aluminium oxide, boron nitride, silicon nitride, metal nitrides such as aluminium nitride, metal carbides such as SiC, calcium carbonate, potash, sodium carbonate, magnesium carbonate, metal carbonates such as brium carbonate, aluminium hydroxide, metal hydrides such as magnesium hydroxide, aluminium borate, barium titanate, calcium phosphate, calcium silicates, clay, gypsum, barium sulfate, mica, diatomite, land plaster, inorganic urine, talcum, lithopone, zeolite, dust Lip river soil, fluorescent material, sheet metal (silver powder etc.) etc.In addition, in order to obtain intensity, also can adopt the filler of needle-likes such as potassium titanate, barium silicate, glass fibre.Wherein, preferred barium titanate, titanium oxide, aluminium oxide, silica etc.

The particle diameter of filler does not limit especially, and for example, the filler that is lower than 5 μ m more than the medium particle diameter 1 μ m makes the light irregular reference well from fluorescent material etc., the fluorescent material by adopting big particle diameter etc., the look inequality that can suppress to be easy to generate.Be lower than the charges of 1 μ m more than the medium particle diameter 1nm, little to the interference effect of the optical wavelength of coming self-emission device, but do not reduce luminosity, can improve the photoconductive tube front end component, for example the viscosity of resin.Thus, fluorescent material etc. roughly is evenly dispersed in the resin, can keeps this state, even when adopting the bigger fluorescent material of awkward size ratio etc., also can produce in batches on high finished product rate ground.The following charges of the above 100 μ m of medium particle diameter 5 μ m if be contained in the photoconductive tube front end component for example in the resin, can improve the chromaticity distortion of light-emitting component by the light debunching action, can improve the resistance to sudden heating of resin simultaneously.In addition, filler is considered dispersiveness or reflectivity etc., can set multiple shapes such as spherical, needle-like, sheet for.

Filler preferably has particle diameter and/or shape with equal degree such as fluorescent material.Herein, the particle diameter of so-called equal extent, what say is that the difference of the medium particle diameter separately of each particle is lower than at 20% o'clock, the shape of so-called equal extent, what say is that expression is lower than at 20% o'clock with the difference of the value of the circularity (the just circumferential length of the projection of round circumferential length/particle that equates with the projected area of circularity=particle) of the just round degree of approximation of each particle diameter.By adopting so filler, fluorescent material etc. interact with filler, for example, can disperse fluorescent material etc. well in resin, can suppress the look inequality more.

Filler, for example, can be by 0.1～80 weight % of the transparent member or the total scale of construction of wavelength conversion parts, and then by below the 50 weight %, below the 50 weight %, below the 40 weight %, contain below the 30 weight %.

Transparent member or wavelength conversion parts for example, preferably at random together mix above-mentioned fluorescent material etc. with filler and appropriate solvent, burn till formation by any while heating, or utilize extrusion forming, or plating etc., in fact only by fluorescent material etc., adopt filler to form arbitrarily.That is, preferably do not adopt organic substance as transparent member.Herein, what is called in fact only is made of fluorescent material etc., is illustrated in the transparent member, contains fluorescent material etc. more than the 95 weight %, in other words, only contains the meaning as the organic substance of transparent member below the 5 weight %.Thus, even the high light of irradiates light density continuously also can be controlled at irreducible minimum with resulting from the deterioration of this light.

But; at transparent member is to mix in the resin; as long as adopt appropriate solvent just passable as required; also can utilize casting, spraying process, silk screen print method, stencil print process etc.; and then utilize the method for forming etc., vacuum lining method, powder spraying lining method, static method of piling, electrophoresis method of piling etc. of plastics such as injection molding, compression method, continuity method, injection, extrusion, lay-up method, rolling process, injection injection moulding, form desirable shape.

Wavelength conversion parts or transparent member, can form a kind of fluorescent material etc. by individual layer, also can form the individual layer of fluorescent material of mixing equably more than 2 kinds etc., also can be more than 2 layers lamination contain the individual layer of a kind of fluorescent material etc., also can be more than 2 layers lamination evenly mix the individual layer of fluorescent material more than 2 kinds etc. respectively.In addition, under 2 layers of situation with the superimposed layer individual layer, the fluorescent material that each layer contains etc., also the lambda1-wavelength with the wavelength of degree can be transformed into emergent light with the wavelength of degree, also the lambda1-wavelength with the wavelength of degree can be transformed into the emergent light of different wave length, but preferably the lambda1-wavelength of different wavelength be transformed into emergent light with degree or different wavelength.Thus, can be incident on the whole light wavelength conversion parts, that answer conversion by wavelength conversion, can carry out wavelength conversion more effectively.

Wavelength conversion parts or transparent member, shown in Fig. 5 (a), also can constitute by the overlapping tablet that contains mutual different types of fluorescent material 31a, 31b, shown in Fig. 5 (b), also can be by contain the mode of lower floor of the fluorescent material 31b different with lining fully with fluorescent material 31a, lamination contains the upper strata of fluorescent material 31b and constitutes.In addition, wavelength conversion parts 30 are preferably at outstanding bowl-shape of exiting side.Can improve brightness more by shape like this.

The thickness of wavelength conversion parts or transparent member does not limit especially, can adjust according to the material that uses is suitable.For example, forming under the situation of fluorescent material or resin etc., can improve conversion efficiency with thick film, the result can improve luminous efficiency, but then, because sometimes because of the absorption of light etc., also lose luminous efficiency, select suitable film thickness so preferably consider this problem ground.

As shown in Figure 1, transparent member 300 (wavelength conversion parts 30), be preferably mounted at the leading section of the photoconductive tube 20 that is used to derive exciting light 1, promptly on the outgoing end, but the coupling part that also can be installed in excitation source 10 and photoconductive tube 20 is on the injection part 12 of exciting light 1.Under the situation that is the latter, even have dirty place also can use at the front end of photoconductive tube.In addition, change transparent member or wavelength conversion parts easily.Thereby, by transparent member or wavelength conversion parts are set in a plurality of positions, can seek to improve productivity.

In addition, as described later, under the situation of a plurality of excitation sources of combination (light-emitting device), also can derive excitation beam from each excitation source at this light exit side by photoconductive tube, all integrally with single or multiple lift, or the part forms the transparent member that contains translucent material integrally with single or multiple lift.Thus, can simplify the operation that forms the wavelength conversion parts respectively.

In addition, in photoconductive tube described later one one for example, also can be contained fluorescent material etc. in core material.

Lens

In light-emitting device of the present invention, for example, as shown in Figure 1, preferably between laser diode 11 and injection part 12, lens 13 are set.

Lens as long as the luminous energy optically focused that penetrates from laser diode can be Any shape in the incident section of photoconductive tube, also can dispose a plurality of between laser diode and injection part abreast.Lens can be formed by unorganic glass, resin etc., wherein preferred unorganic glass.Between excitation source and photoconductive tube, have lens, under the exciting light that scioptics will penetrate from excitation source is derived situation to photoconductive tube, from the exciting light that excitation source penetrates, exciting light can be utilized by optically focused more expeditiously, brightness can be further improved.

In addition, on lens, also can contain the material of the wavelength conversion parts that can be used as fluorescent material etc.Thus, owing to utilize lens function, the certain optically focused of the exciting light of wavelength conversion at injection part, so can eliminate colo(u)r bias, owing to pass through to make lens, also can be made the wavelength conversion parts, so can suppress the manufacturing cost of wavelength conversion parts simultaneously.

The photoconductive tube front end component

In light-emitting device of the present invention, as shown in Figure 1, the front end of preferred light conduit 20, i.e. the end that is not connected with excitation source 10 (outgoing end) supported by the photoconductive tube front end component 70 that is commonly referred to ozzle.By photoconductive tube front end component so, fixing easily emergent light from photoconductive tube.In addition, improve luminous efficiency according to its material or shape easily, carry out assembling simultaneously easily as light-emitting device.Therefore, the photoconductive tube front end component, so long as can support photoconductive tube, constituting with which kind of material and shape can.

The photoconductive tube front end component, the material of preferably using the high wherein any material of light reflectivity height, the refractive index height of light, thermal conductivity with respect to exciting light and/or wavelength conversion or having their character more than 2 kinds forms.Thus, the assembling as light-emitting device is carried out in the luminous efficiency of the front end of raising photoconductive tube, heat radiation etc. simultaneously easily.Especially, preferably the mode that is higher than the thermal conductivity of transparent member with the thermal conductivity of photoconductive tube front end component constitutes.Thus, can be more energetically in the heat radiation of photoconductive tube front end component, alleviate the harmful effect that the heat of transparent member causes.

For example, with respect to the peak wavelength of the light of exciting light and/or wavelength conversion, the light for the reflectivity more than 80%, 350～500nm scope preferably has n: the thermal conductivity more than refractive index more than 1.4 and/or 0.1W/m ℃.Ag, Al, ZrO specifically can give an example ₂, aluminium oxide (Al ₂O ₃), aluminium nitride (AlN), Pyrex, stainless steel (SUS), carbon, copper, barium sulfate etc.Wherein, adopting ZrO ₂Situation under owing to keep tensile strength easily, so preferably by ZrO ₂, stainless steel (for example, SUS303 etc.) forms.In addition, because aluminium oxide is to the reflectivity height and the thermal conductivity height of the visible light whole district, so when the light-emitting device of illuminant colour of colour system is turned white in setting, more preferably aluminium oxide.

The photoconductive tube front end component, for example, it also can be the drum that surrounds the periphery of photoconductive tube, perhaps in order to give multiple function to the end face of photoconductive tube, also can be integratedly or the shape of various functional membrane/parts of single installation etc., or integratedly or single installation be used to cover the shape of the lid of the end face of photoconductive tube or various functional membrane/parts or cover etc.In addition, be under the situation of drum at the photoconductive tube front end component, for example, preferred diameter is below 3mm.

About the photoconductive tube front end component, the end face of configuration wavelength conversion parts one side, cross section (the reference of also can original state exposing the photoconductive tube front end component that intersects vertically with length direction, Fig. 3 (I)～Fig. 3 (p) 70), but, have inclination, bending, concavo-convex etc. preferably to reach mode than the area of the cross-section face width that intersects vertically with length direction.Specifically be, at the local of the end face of photoconductive tube front end component or all, can form have the face that tilts with respect to cross section X ° (0＜X≤90) formation (for example, with reference to Fig. 3 (a)～(g), (r)～(u) 70) and have the formation of curved surface (for example, with reference to Fig. 3 (h), (p) 70 etc.).Thus, can improve 2 kinds of effects that increase light output and reduce the deterioration of wavelength conversion parts more.

In addition, preferred light conduit front end component is the shape of the part of Chamfer Edge portion on the one end.That is the outstanding part of the ratio photoconductive tube on the edge parts preferred local or all breach photoconductive tube front end components (for example, with reference to Fig. 3 (b) and Fig. 3 (e) 70).Thus, light output can be improved more, the deterioration of wavelength conversion parts can be suppressed simultaneously more.In addition, thinking the raising of light output, is because can be at the edge part of photoconductive tube front end component, reduce blocking near the part of the light that shines the photoconductive tube front end component so.Thinking the deterioration that suppresses the wavelength conversion parts, is owing to by reducing the part of blocking light, can take out light to the outside expeditiously, suppress thus heating so.

In addition, the photoconductive tube front end component as shown in Figure 6, preferably forms in its side concavo-convex (with reference to 80 among Fig. 6).Thus, can increase the surface area of photoconductive tube front end component, increase heat radiation from photoconductive tube or wavelength conversion parts.

The photoconductive tube front end component, also the mode that can form one side with an end face of its end face and photoconductive tube (for example supports photoconductive tube, reach (t) with reference to Fig. 3 (a)～(h), (q)), also can support (for example, with reference to Fig. 3 (k), (l), (n), (o) and (r) etc.) from the outstanding mode of the main end face of the leading section of photoconductive tube front end component with photoconductive tube.In addition, shown in Fig. 3 (s), also can form the shape of the periphery (for example covering) of removing photoconductive tube.In addition,, only expose to length direction under the situation of photoconductive tube of core adopting in its end as photoconductive tube, also can be from the leading section of the photoconductive tube front end component core of outstanding photoconductive tube only.

In addition, consider that the photoconductive tube front end component also can constitute at least a portion of the outgoing end of photoconductive tube mode as the sidewall of the recess of bottom to become from another viewpoint.The sidewall of this recess, can be set at preferred 0.3 μ m above, more preferably 0.6 μ m above, most preferably more than 1, the 2 μ m.Thus, can obtain effect of the present invention easilier.The plane can not only be formed on the bottom of the recess that forms with photoconductive tube 20 and photoconductive tube front end component 30, and can form multiple shape such as curved surface shape.The sidepiece height and the concave depth of recess for example, can adopt mensuration such as laser microscope, probe microscope, section difference meter.

The bottom of recess owing to only do not need to be made of the outgoing end of photoconductive tube, therefore needs only and comprises that at least the outgoing end of photoconductive tube is just passable.For example, also can be roughly the bottom that mode simultaneously forms recess with the outgoing end of photoconductive tube and an one of photoconductive tube front end component.Even in so constituting, also can access effect of the present invention.Will be more effectively and high reproducibility obtain effect of the present invention, the bottom of preferred recess in fact only is made of the outgoing end of photoconductive tube.In addition, the sidewall and the bottom approximate vertical of preferred recess, but also can tilt.

Extend in the transparent member in the recess that constitutes by photoconductive tube front end component and photoconductive tube, preferably not only extend in recess, and be configured at least a portion of end of photoconductive tube front end component.For example, as shown in Figure 7, by configuration transparent member 300 (or wavelength conversion parts 30 on the whole end of photoconductive tube front end component 70, down together), not only from the part of the recess sidewalls of photoconductive tube front end component, and can discharge the heat that produces at transparent member from the end of photoconductive tube front end component.In addition, can't help when photoconductive tube front end component and photoconductive tube form recess, for example, even at photoconductive tube front end component and photoconductive tube is under the situation of one side in the end, by not only transparent member being configured in the end of photoconductive tube, and be configured at least a portion of end of photoconductive tube front end component, also can discharge the heat that produces at transparent member from the end of photoconductive tube front end component.That is,, also can alleviate the deterioration of transparent member even can't help when photoconductive tube front end component and photoconductive tube form recess.But, as shown in Figure 7, owing to have recess, and be configured at least a portion of end of photoconductive tube front end component 70 by transparent member 300 is extended, can more effectively alleviate the deterioration of transparent member 300, so preferred so configuration.

In addition, to form hot link just passable as long as become the photoconductive tube front end component of sidewall of recess and transparent member, and the photoconductive tube front end component also not necessarily directly and fully is connected with transparent member.For example, on recess sidewalls, also can form the locally-attached formation of photoconductive tube front end component and transparent member, perhaps be formed on photoconductive tube front end component and transparent member between, the formation that indirectly connects via conducting-heat elements for example.For the end and the transparent member of photoconductive tube front end component, also be same.

In addition, the photoconductive tube front end component, owing to need not be single parts, so also can constitute by a plurality of parts.For example, also can constitute the photoconductive tube front end component by the 1st parts of the side of the outgoing end side that covers photoconductive tube and at least one the 2nd parts that become with the outgoing end of photoconductive tube as the sidewall of the recess of bottom.In such cases, preferred, the 2nd parts are the high parts of thermal conductivity ratio the 1st parts.Thus, can improve more from the thermal diffusivity of transparent member to the photoconductive tube front end component.

In addition, the photoconductive tube front end component, the end face of preferred disposition wavelength conversion parts is also installed reflective mirror, makes direct reflection or forms the concavo-convex of regulation, makes the processing of its irregular reference etc.Thus,, turn back to by reflection under the situation of photoconductive tube side, from the exciting light of photoconductive tube irradiation and/or the light of wavelength conversion in a single day by reflecting once again by the photoconductive tube front end component, can take out the light of exciting light and wavelength conversion effectively to the outside, so light output improves.And, when forming at end face under the concavo-convex situation, can improve the adaptation of wavelength conversion parts on the photoconductive tube front end component, improve the thermal diffusivity of wavelength conversion parts, can prevent peeling off or deterioration of wavelength conversion parts simultaneously.In addition, preferably have direct reflection and/or concavo-convex face, not only be formed on the end face of photoconductive tube front end component, and be formed on the end face of photoconductive tube.

The thermal conductivity light-transmissive film

In light-emitting device of the present invention, preferably with wavelength conversion parts position contacting on form the thermal conductivity light-transmissive film.Thus, because of to the very high exciting light of wavelength conversion parts irradiates light density, under the situation of heating such as fluorescent material, can effectively and promptly dispel the heat by the thermal conductivity light-transmissive film.

For example, shown in Fig. 5 (a) and (b), preferred thermal conductivity light-transmissive film 32 be configured in the local of light-emitting face between photoconductive tube 20 and the wavelength conversion parts 30 or all on, shown in Fig. 5 (c), be configured in light-emitting face local of the wavelength conversion parts different with a side that has photoconductive tube or all on.Especially, more preferably between photoconductive tube and wavelength conversion parts, form in the mode that covers the whole exciting light outgoing zone on the photoconductive tube.So, pass through the thermal conductivity light-transmissive film at exciting light from photoconductive tube, import under the situation of wavelength conversion parts, can be according to the character of light-transmissive film, do not cause luminous intensity decline ground, according to the character of thermal conductivity, effectively remove the heat in transparent member or wavelength conversion parts are passed in the highest zone of optical density, also discharge the heat that in transparent member or wavelength conversion parts, produces simultaneously.Specifically be that usually, because photoconductive tube possesses photoconductive tube front end component described later in outgoing portion, therefore the exiting side at the photoconductive tube front end component disposes the thermal conductivity light-transmissive film.

The thermal conductivity light-transmissive film, ITO, ZnO, In for example can give an example ₂O ₃, SnO ₂, MgO, Al ₂O ₃, LaF ₃, CeF ₃Deng at least a kind of monofilm or multilayer film.Wherein, preferred ITO, ZnO, In ₂O ₃, SnO ₂Or the monofilm of MgO.In addition, more preferably by these films of crystal formation.Thus, adaptation or cementability on transparent member or wavelength conversion parts are better, can improve heat moving on the thermal conductivity light-transmissive film.The thickness of this film, for example be adapted at 1000～

Scope.

The thermal conductivity light-transmissive film can be by known method formation in the past.For example, can utilize sputtering method, reactive sputtering method, vacuum vapour deposition, ion beam accelerator process, laser abrasion method, CVD method, spraying process, spin-coating method, infusion process or several different methods such as these methods and heat treated combination.

In addition, the thermal conductivity light-transmissive film as long as have above-mentioned functions, can be brought into play above-mentioned functions, also can with dual-purposes such as functional membrane described later or functional part.

Functional membrane/parts

Be not limited to and be installed on the above-mentioned photoconductive tube front end component, in light-emitting device of the present invention, various functional membrane/parts are installed in position preferably.As functional membrane/parts herein, for example, the wavelength conversion optical reflection film of can giving an example, exciting light reflectance coating, diffusion prevent parts, proliferation part etc.

The wavelength conversion optical reflection film can be used in the light that prevents by wavelength conversion parts wavelength conversion and turns back to the exciting light light incident side, by making the light reflection that turns back to the exciting light light incident side, can be used as light and takes out to the outside simultaneously.Therefore, the wavelength conversion optical reflection film, preferably pass through by the light that only makes specific wavelength, can reflect specific wavelength and promptly formed by the material of the light of wavelength conversion.Thus, the light that turns back to the exciting light light incident side can be reflected, luminous efficiency can be sought to improve.In addition, the wavelength conversion optical reflection film, preferred disposition is on the lead-in portion of exciting light at least of wavelength conversion parts.

The exciting light reflectance coating can be used in and prevents that exciting light is directly to external irradiation with prevent that exciting light from sewing from the non-part of wanting etc.Thus, for example, by make through in the wavelength conversion parts but do not turned back to once more in the wavelength conversion parts by the exciting light of fluorescent material equiwavelength conversion, can improve luminous efficiency.So, preferred exciting light reflectance coating by only by being formed by the material light of the specific wavelength of wavelength conversion, that can reflect exciting light.In addition, preferred exciting light reflectance coating is configured on the derivation part of light of wavelength conversion at least of wavelength conversion parts.Thus, the irradiation of exciting light can be reduced, luminous efficiency can be improved to the outside.

Diffusion prevents parts, can be used in the direction diffusion that fat ends exciting light and/or wanted to non-by the light of wavelength conversion.So preferred diffusion prevents that parts from constituting by blocking exciting light more than 90% and/or by the material of the light of wavelength conversion and shape.For example, also can be to be clamped in the mode between photoconductive tube and the wavelength conversion parts, be configured in photoconductive tube and wavelength conversion parts between, on the tie point etc., also can dispose, also can dispose in the mode of the outer surface beyond the wavelength conversion rayed part that covers the wavelength conversion parts in the mode of the boundary member that surrounds photoconductive tube and wavelength conversion parts.

Proliferation part is mainly used in by the diffusion exciting light, utilizes the fluorescent material etc. of wavelength conversion parts to make more excitation light irradiation, improves luminous efficiency.Therefore, proliferation part, preferred disposition is between the exit portal of the light of photoconductive tube and wavelength conversion parts.Proliferation part for example can adopt refractive index ratio in above-mentioned resin material higher, that contain described additive in the above-mentioned resin.Wherein, preferred silicones.Thus,, the burden of the wavelength conversion parts of unit are can be alleviated, therefore the luminous efficiency and the linearity can be improved owing to can reduce the output that is radiated at the light on the wavelength conversion parts.

For example, the thickness of proliferation part can be according to the core diameter of photoconductive tube, the suitable adjustment such as footpath of the refractive index of used proliferation part and thickness, wavelength conversion parts arbitrarily.

Intercepting member

In light-emitting device of the present invention, also intercepting member can be installed.Preferred intercepting member is the parts that interdict more than 90% from the light of excitation source.For example, emit in employing under the situation of harmful ultraviolet light-emitting component,,, can adopt ultra-violet absorber or reflective agent etc., make it be contained in the light leading-out portion as intercepting member for interdicting this ultraviolet ray.Thus, can suppress the irradiation of ultraviolet ray etc.Wherein, consider, preferably adopt reflective agent from the viewpoint that can improve luminous efficiency more.

In addition, because intercepting member also has the function of described exciting light reflectance coating, nonproliferation film etc., therefore can not utilize distinctively with their strictnesses yet.

The mode of light-emitting device

Light-emitting device of the present invention, as shown in Figure 1, by the light-emitting device of 1 excitation source 10 (light-emitting component 11), 20,1 transparent member 300 of 1 photoconductive tube or wavelength conversion parts 30 formations, as the unit, as shown in figure 14, also can make up at least and constitute light-emitting device more than 2.The number of combinations of unit can be according to color rendering and output decision.In addition, in this light-emitting device, as mentioned above, also can form the wavelength conversion parts of each unit.

Light-emitting device of the present invention preferably has 120 lumens/mm ²Above brightness.

The purposes of light-emitting device

Light-emitting device of the present invention can be used in multiple use.For example, also can be, or also can be used for as endoscope apparatus as the illumination of common ligthing paraphernalia, vehicle boarded usefulness (specifically be, headlamp with light source, taillight with light source etc.), observe and give birth to body inside, while or observe the device for the treatment of.In addition, also can be used to observe very narrow or very dark space, for example the fiber formula observer of the enclosure space in atomic energy furnace interior, traces etc.In addition, also can as wait in the chamber of various vacuum plants to avoid electric current sewing or the parts of heating etc. on various industries with, industrial, home-use light source.In addition, the light-emitting device that also can be used as in the place that requires point-source of light or the place of light source replacing difficulty etc. located to use.

Therefore, this light-emitting device, can with shooting part (promptly, optical imagery is transformed into the electronic unit (light receiving component) of the signal of telecommunication), specifically be the imaging apparatus that utilizes CCD (charge-coupled device), CMOS (CMOS image sensor) etc., converting electrical signal is become picture signal image signal processing apparatus, the expression signal of telecommunication or measured value etc. indicating device, output image signal and mirror the display of image, the computer etc. that carries out various processing and calculating together uses.Especially, adopting under the situation of imaging apparatus, the optical image that is written into body can be set at easy-to-handle image as shooting part.

For example, photo detector (for example, light-emitting diode etc.) also can be used as monolithic design and becomes light-emitting device, but also can be located at laser diode in the excitation source near, fiber waveguide around or in the fiber waveguide front end component in any on.Thus, the light quantity that can send from laser diode by photo detector observation under the situation below certain light quantity, is put into electric current in the laser diode etc. by adjustment, can keep certain light quantity.

Light-emitting device of the present invention because brightness height, tone variation are little, it is very high to be imbued with very much color reproduction, color rendering, therefore as endoscope apparatus, with require distinct devices such as shooting and with in, can bring into play the very effect of excellence.

In addition, light-emitting device of the present invention also can be used for visible light communication.That is, utilize the visible light that obtains by above-mentioned light-emitting device, for example, can construct radio environment by additional communications functions in light-emitting device.Thus, owing to adopt laser diode as excitation source, so can realize the tuned speed of hundreds of MHz.

In addition, light-emitting device of the present invention can be used in the image display device at image displaying part (screen) color display.In light-emitting device of the present invention, owing to can therefore can bring into play excellent effect with the light of the luminous high brightness of high-luminous-efficiency as the light source of image display device.

Below, describe the specific embodiment of light-emitting device of the present invention in detail based on accompanying drawing.

Embodiment 1

As shown in Figure 1, the light-emitting device of present embodiment, its formation has excitation source 10, guide pipe 20, thermal conductivity light-transmissive film (not shown), wavelength conversion parts 30.

In excitation source 10, adopt laser diode as near the light-emitting component 11 that 405nm, has peak luminous wavelength.Laser diode is the semiconductor element of GaN system.

Photoconductive tube (light guiqde) 20, the one end is connected with the outgoing portion 12 of the light of excitation source 10, and the other end is connected with efferent 21.As photoconductive tube 20, adopt for example SI type 114 (the μ m: core diameter)/125 (μ m: covering directly) of quartzy system.

Leading section at photoconductive tube 20 is equipped with the lasso (ferrule) that SUS makes.

In addition, at the end face of lasso, promptly on whole of the light-emitting face of photoconductive tube 20, press thickness

Configuration ITO film.In addition,, form the ITO film, be configured in the light-emitting face of photoconductive tube 20 so utilize sputtering method to go up at the cover glass (cover glass) of thickness 150 μ m owing on the end face of lasso and photoconductive tube, directly form ITO film difficulty.

In the light-emitting face side of the ITO of efferent 21 film, the wavelength conversion parts 30 that in fact only are made of fluorescent material are installed.

As fluorescent material, mix the turn blue Ca of coloured light of 2g ₁₀(PO ₄) ₆Cl ₂: Eu, the mixed liquor (weight ratio=12: 88) of mixing 2g ethyl cellulose and terpineol by burning till 30 minutes at 80 ℃, burnt till 10 minutes at 200 ℃, burnt till the sintering fluorescent material 1 hour at 500 ℃.The thickness of wavelength conversion parts 30 for example is defined as about 500 μ m.

In this light-emitting device 10, be useful on the lens 13 of optically focused from the exciting light 1 of laser diode in the former configuration of semiconductor light-emitting elements 11.

In this light-emitting device, with multiple output excitation source is driven, measure relative intensity with respect to the light of light output.

Solid line among Fig. 8 is represented its result.

In addition,, prepare light-emitting device identical with above-mentioned light-emitting device except that not disposing the ITO film,, excitation source is driven the dotted line ecbatic among Fig. 8 with multiple output with above-mentioned same for relatively.

Can confirm that according to Fig. 8 the relative intensity with respect to the light of light output by configuration thermal conductivity light-transmissive film, has shown good linearty.

In addition, about both sides' light-emitting device, with 100mW continuous oscillation excitation source the time,, confirm to have suppressed the temperature of wavelength conversion parts by configuration conductivity light-transmissive film.In addition, by preventing the heating of the fluorescent material on the wavelength conversion parts, affirmation can suppress the deterioration of wavelength conversion parts, can access the light-emitting device of high life.

In addition,,, prepare and the identical light-emitting device of light-emitting device in the foregoing description, measure its characteristic same as described abovely except that not configuration ITO film and cover glass on the end face of lasso for the influence of the cover glass on the end face of studying lasso.

Relative intensity with respect to light output is roughly the same with the light-emitting device that is used for above-mentioned comparison that only disposes cover glass.

Embodiment 2

The light-emitting device of this embodiment as fluorescent material, removes and adopts LAG, BAM, YAG, SCA, SCESN, SESN, CESN and CaAlSiN respectively ₃: beyond the Eu, come down to the light-emitting device identical with embodiment 1.

If these light-emitting devices are carried out same evaluation, aspect the relative intensity and life-span of the light of exporting with respect to light, the result is roughly the same.

Embodiment 3

The light-emitting device of this embodiment as fluorescent material, remove to mix the turn blue Ca of coloured light of 10g ₁₀(PO ₄) ₆Cl ₂: Eu, mix 100g isopropyl alcohol, 20g alumina sol and 10g acetone, add the voltage of 50V, dry then, electroplate beyond the fluorescent material, come down to the light-emitting device identical with embodiment 1.

If these light-emitting devices are carried out same evaluation, aspect the relative intensity and life-span of the light of exporting with respect to light, the result is roughly the same.

Embodiment 4

As shown in Figure 1, the light-emitting device of present embodiment, its formation has excitation source 10, guide pipe 20, wavelength conversion parts 30, photoconductive tube front end component 70.

Excitation source 10 as light-emitting component 11, adopts the semiconductor by near the GaN system that has peak luminous wavelength 405nm to constitute LD.Former configuration at LD is used for the lens 13 of optically focused from the exciting light 1 of LD.

Photoconductive tube 20, the one end is connected with the outgoing portion 12 of the light of excitation source 10, and the other end is connected with efferent 21.As photoconductive tube 20, adopt SI type 114 (the μ m: core diameter)/125 (μ m: covering directly),, adopt zirconia (ZrO of quartzy system as the photoconductive tube front end component 70 that supports photoconductive tube ₂) parts of lineal 2.5mm of system.In addition, shown in Fig. 9 (b), the photoconductive tube 20 of present embodiment and the end face of photoconductive tube front end component 70, the angle of inclination that has 60 ° with the face that comprises photoconductive tube 20 with respect to the cross section, simultaneously as another side, not outstanding its edge part, the mode that has the end face 70a parallel with the cross section at its edge part is processed.

The end face of photoconductive tube 20 and photoconductive tube front end component 70 by initial rough lapping, finally forms with the abrasive disc fine lapping of granularity #15000.

Wavelength conversion parts 30 evenly to disperse the mode moulding of fluorescent material in resin, are installed on the efferent 21.That is, spread all over photoconductive tube 20 and photoconductive tube front end component 70 both sides' whole end face ground by one deck structural arrangements wavelength conversion parts 30.

Fluorescent material uses the turn blue Ca of coloured light of 0.9g ₁₀(PO ₄) ₆Cl ₂: the Y of Eu, 0.1g jaundice look ₃Al ₅O ₁₂: Ce (YAG).In the 1.1g silicones, evenly mix these fluorescent materials, utilize cast to make wavelength conversion parts 30.

In addition, as a comparative example, remove a end face with photoconductive tube and photoconductive tube front end component, as Fig. 9 (c) shown in the cross section of the length direction orthogonal of photoconductive tube beyond, make formation light-emitting device same as the previously described embodiments.

In these light-emitting devices, drive excitation source with 70～280mA, estimate characteristic.

As a result, as shown in figure 10, the light-emitting device of present embodiment is compared with the light-emitting device of comparative example, and the peak of light beam improves about 30%, confirms to improve light output.

In addition, according to Figure 10, the light-emitting device of comparative example, dropping into electric current is the boundary with about 170mA, light beam sharply descends.Its main reason is owing to wavelength conversion parts deterioration, variable color.And in the light-emitting device of present embodiment, it is also unsaturated to about 230mA to drop into electric current, and light beam improves.Above result shows, in the light-emitting device of present embodiment, and the more difficult deterioration of wavelength conversion parts.

Embodiment 5

The light-emitting device of present embodiment removes by the abrasive disc with granularity #200 and grinds photoconductive tube and photoconductive tube front end component, asperities be set be concavo-convex beyond, make and constitute the light-emitting device identical with embodiment 1.

For the light-emitting device of this embodiment, when estimating in the same manner, as shown in figure 11, to compare with the light-emitting device of comparative example with embodiment 1, the peak of light beam improves about 50%, confirms that light output improves.

Form asperities by interface, increase substantially the peak of light beam, reduce the deterioration of wavelength conversion parts simultaneously photoconductive tube and photoconductive tube front end component and wavelength conversion parts.In addition,, learn, because the output height of present embodiment, so the shape of the present embodiment shown in Fig. 9 (b) is better than the shape of the embodiment 6 shown in Fig. 9 (a) by comparing with the embodiment described later 6 that is identically formed asperities.

Embodiment 6

This light-emitting device shown in Fig. 9 (a), in the formation of photoconductive tube 20, photoconductive tube front end component 70 and wavelength conversion parts 30, is not removed edge part highlightedly, the light-emitting device of the face of the comprehensive 60 ° of inclinations of single formation.In addition, grind photoconductive tube and photoconductive tube front end component by the abrasive disc with granularity #200, it is promptly concavo-convex that asperities is set.

For this light-emitting device, when estimating in the same manner, as shown in figure 12, to compare with the light-emitting device of comparative example with embodiment 1, the peak of light beam improves about 30%, confirms to obtain high brightness luminescence device.

Embodiment 7

The light-emitting device of present embodiment as shown in Figure 1, mainly is made of light-emitting component 11, guide pipe 20, photoconductive tube front end component 70, transparent member 30.In the front of light-emitting component 11, be provided for the lens 2 that optically focused comes the light 1 of self-emission device 11.

Employing constitutes LD, adopts the quartzy SI type of making 114 (μ m: core diameter)/125 (μ m: covering directly), adopt by zirconia (ZrO as photoconductive tube front end component 70 as photoconductive tube 20 as the semiconductor of light-emitting component 11 by near the GaN system that has peak luminous wavelength 445nm ₂) parts of the lineal 2.7mm that constitutes.In addition, in wavelength conversion parts 30,,, contain the Lu of 0.54g glow green with respect to the 1.1g silicones as transparent member ₃Al ₅O ₁₂: (Sr, the Ca) of Ce, the rubescent look of 0.2g ₂Si ₅N ₈: 2 kinds of fluorescent materials such as Eu.In addition, in the present embodiment, zirconia is compared with silicones has thermal conductivity high about 3 times.

As shown in Figure 7, in the present embodiment, be provided with bottom, the whole outgoing end of photoconductive tube 20, with the recess of photoconductive tube front end component 70 as sidewall as a plane.Form recess, for example, can be by utilizing photoconductive tube 20 and the photoconductive tube front end component 70 that constitutes by different materials, employing grinding agent etc. grinds photoconductive tube 20 selectively and forms.Herein, form from the recess of the roughly recessed 1.6 μ m in end of photoconductive tube front end component 30.

After so recess being set, utilize the outgoing end side configuration wavelength conversion parts 30 that are cast in photoconductive tube 20 and photoconductive tube front end component 70., extend in the recess herein, after cast, implement reduced pressure treatment in order to make wavelength conversion parts 30 more completely.

As a comparative example, in the outgoing end side,, make the light-emitting device of identical formation except that photoconductive tube 20 and photoconductive tube front end component 70 are that a plane is the one side.

In Figure 13, to the light-emitting device of present embodiment and the light-emitting device of comparative example, drive LD with 80～430mA, estimate its characteristic.As shown in figure 13, the light-emitting device of present embodiment is compared with the light-emitting device of comparative example, and the peak of light beam improves about 20%, confirms that luminous output improves.According to Figure 13, the light-emitting device of comparative example, drive current are the boundary with 370mA approximately, and light beam sharply descends.Its main reason be since transparent member because of heat deterioration, variable color.And in the present embodiment, drive current is also unsaturated to about 420mA, confirms that light beam improves.

Above result shows, in the light-emitting device of present embodiment, compares the more difficult deterioration of transparent member with comparative example.

Claims (12)

1. light-emitting device, by the excitation source that penetrates exciting light, flexible length direction extend and transmit the exciting light that penetrates from described excitation source photoconductive tube and to penetrate from described excitation source and via the exciting light of described photoconductive tube absorb, wavelength conversion and the light wavelength transform component of emitting the provision wavelengths zone constituted, it is characterized in that:

Described photoconductive tube is penetrating a side of exciting light, has the end face of the area bigger than the area of section that intersects vertically with its length direction, and is supported by the photoconductive tube front end component,

At least a portion of described photoconductive tube and photoconductive tube front end component is covered by the wavelength conversion parts,

The photoconductive tube front end component is penetrating a side of exciting light, has the end face of the area bigger than the area of section that intersects vertically with its length direction.

2. light-emitting device as claimed in claim 1 is characterized in that: the photoconductive tube front end component in a side that penetrates exciting light, has the end face in the shape of the outstanding edge part chamferingization of length direction.

3. light-emitting device as claimed in claim 1 is characterized in that: photoconductive tube, with on the cross section that intersects vertically with length direction, central part is that the refractive index of core is that the mode of the refractive index of covering constitutes greater than periphery.

4. light-emitting device as claimed in claim 1 is characterized in that: form concavo-convex in the side of photoconductive tube front end component.

5. light-emitting device as claimed in claim 1 is characterized in that: photoconductive tube and/or photoconductive tube front end component have end face in a side that penetrates exciting light, and described end face possesses concavo-convex.

6. light-emitting device as claimed in claim 1 is characterized in that: also have the thermal conductivity light-transmissive film that contacts with the wavelength conversion parts.

7. light-emitting device as claimed in claim 1 is characterized in that: the exciting light that penetrates from excitation source is a laser.

8. light-emitting device, have light-emitting component, possess incident and come the outgoing end of the incident end of light of self-emission device and emergent light and flexible the photoconductive tube that extends, see through from the transparent member of the light of photoconductive tube outgoing, described light-emitting device has the photoconductive tube front end component, the side of the outgoing end side of this photoconductive tube front end component lining photoconductive tube, become simultaneously with at least a portion of the outgoing end of photoconductive tube sidewall as the recess of bottom

Described transparent member extends to described recess,

Described photoconductive tube front end component is made of the material of the light reflection that makes exciting light and/or wavelength conversion,

Described transparent member contains the wavelength conversion parts.

9. light-emitting device as claimed in claim 8, wherein, the thermal conductivity of photoconductive tube front end component is higher than described transparent member.

10. light-emitting device as claimed in claim 8, wherein, described transparent member has the wavelength conversion parts that the light of self-emission device in the future is transformed into different wavelength regions.

11. light-emitting device as claimed in claim 10 wherein, also has the thermal conductivity light-transmissive film that contacts with the wavelength conversion parts.

12. light-emitting device as claimed in claim 8, wherein, described light-emitting component is a laser diode.

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