JP2006173498A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device which has high performance and long service life, and uses a semiconductor light emitting element with most superior light emitting efficiency enough to prevent the degrading of members constituting the light emitting device and which can efficiently demonstrate high light emission efficiency characteristic to emit an extremely high illuminance light. <P>SOLUTION: The light emitting device is provided with an excitation light source at one end to emit an excitation light and a wavelength conversion member at the other end to absorb the excitation light emitted from the excitation light source, convert its wavelength, and discharge an illumination light with a specified wavelength region. It is comprised of a light guide that makes the refractive index of a central part (core) of its cross section higher than its periphery (clad) and leads an excitation light emitted from the excitation light source to the wavelength conversion member and a conductive light translucent film being in contact with the wavelength conversion member. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a light emitting device, and more particularly, to a light emitting device mainly including an excitation light source, a wavelength conversion member, and a light guide.

2. Description of the Related Art Conventionally, there has been a demand for light that accurately reproduces color information with high luminance in endoscope apparatuses, fiberscopes, and the like.
Therefore, it has been proposed to use a semiconductor light emitting element such as a light emitting diode element (LED) or a laser diode element (LD) instead of a xenon lamp or the like as these light sources (for example, Patent Documents 1 and 2).
The semiconductor light emitting device is small and has high power efficiency, emits light with a vivid color, and has no fear of a broken ball. In particular, since a semiconductor laser has an emission intensity much higher than that of a light emitting diode, a light source with high illuminance can be realized.
JP 2002-95634 A Special table 2003-515899 gazette

In general, in order to accurately reproduce color information using a semiconductor light emitting element, it is necessary to obtain white light by combining light of various wavelengths.
Therefore, a wavelength conversion member composed of a fluorescent material and a resin is usually used in combination with a semiconductor light emitting element.
However, since the light density of the semiconductor light emitting element is very high, the resin, the fluorescent material, and the like constituting the wavelength conversion member generate heat due to high-density excitation light and deteriorate, leading to a decrease in the lifetime of the light emitting device itself. Become.

  Under such circumstances, the present invention uses a semiconductor light-emitting element with extremely good light emission efficiency to sufficiently prevent the deterioration of members constituting the light-emitting device, and sufficiently has the property of high light emission efficiency that emits extremely bright light. An object of the present invention is to provide a high-performance and long-life light-emitting device that can be exhibited.

The light emitting device of the present invention includes an excitation light source that emits excitation light,
A wavelength conversion member that absorbs at least part of the excitation light emitted from the excitation light source and converts the wavelength to emit light in a predetermined wavelength range;
The excitation light source is provided at one end, the wavelength conversion member is provided at the other end, and the refractive index of the central part (core) of the cross section is made higher than that of the peripheral part (clad), and the wavelength of the excitation light emitted from the excitation light source is converted. A light guide led out to the member;
It is comprised from the electroconductive translucent film which contacts the said wavelength conversion member, It is characterized by the above-mentioned.
In this light-emitting device, it is preferable that a conductive light-transmitting film is interposed between the light guide and the wavelength conversion member.
The wavelength conversion member is preferably substantially composed of only a fluorescent material, and the fluorescent material has a good temperature characteristic, in particular, LAG, BAM, BAM: Mn, YAG, CCA, SCA, SCESN, SESN, It is preferable to include at least one selected from the group consisting of CESN and CaAlSiN ₃ : Eu.
Furthermore, it is preferable that a lens is provided between the excitation light source and the light guide, and the excitation light emitted from the excitation light source is introduced into the light guide via the lens.
Moreover, it is preferable that the light led out to the outside shows an average color rendering index (Ra) of 80 or more.

  According to the light emitting device of the present invention, since the conductive translucent film is provided in contact with the wavelength conversion member, the heat generated in the wavelength conversion member is easily and sufficiently released to effectively prevent deterioration due to heat generation. be able to. In other words, the fluorescent material such as the wavelength conversion member and the resin are usually deteriorated by the heat caused by the heat generated by the excitation light source itself. However, in the present invention, by using the light guide, the position is considerably away from the excitation light source. A wavelength conversion member can be provided. However, in the light-emitting device of the present invention, since a high-power excitation light source is used, the wavelength conversion member, particularly the fluorescent substance constituting the same, generates heat by continuously irradiating light with high light density. Although it deteriorates, it becomes possible to remove effectively the heat | fever which generate | occur | produced in the wavelength conversion member through this film | membrane by providing a conductive translucent film in contact with a wavelength conversion member.

  In particular, when the conductive translucent film is interposed between the light guide and the wavelength conversion member, only the heat is suppressed by the conductive translucent film before entering the wavelength conversion member. In addition, the heat generated in the conductive translucent film can be effectively removed, the wavelength conversion member can be prevented from being deteriorated, and the life can be extended.

In addition, when the wavelength conversion member is substantially made only of a fluorescent material, the fluorescent material has a good temperature characteristic, in particular, LAG, BAM, BAM: Mn, YAG, CCA, SCA, SCESN, SESN, CESN and When at least one selected from the group consisting of CaAlSiN ₃ : Eu is included, the use of a material that easily deteriorates due to heat can be suppressed as much as possible. It is possible to minimize the deterioration of the conversion member, particularly the fluorescent material, due to heat.

  Furthermore, a lens is provided between the excitation light source and the light guide, and the excitation light is used more efficiently when the excitation light emitted from the excitation light source is introduced into the light guide through the lens. And the luminance can be improved.

  For example, as shown in FIG. 1, the light-emitting device of the present invention mainly includes an excitation light source 10, a light guide 20, a wavelength conversion member 30, and a conductive light-transmitting film (not shown).

As shown in FIG. 1, the excitation light source includes a light emitting element 11 and the like, and is configured to guide light emitted from the light emitting element 11 from the emitting unit 12 to the light guide 20.
The excitation light source is a light source that emits excitation light. The excitation light here is usually any light as long as it can excite a fluorescent substance to be described later. As the excitation light source, a semiconductor light emitting element, a lamp, or the like, and a device using an electron beam, plasma, EL, or the like as an energy source can be used. Among these, it is preferable to use a semiconductor light emitting element. Since the semiconductor light emitting element has high light emission intensity, a small light emitting device with good power efficiency can be obtained. Further, it is possible to obtain a light emitting device that has excellent initial driving characteristics and is strong against vibration and repeated on / off lighting. Examples of the semiconductor light emitting element include a light emitting diode element (LED) and a laser diode element (LD), and among them, a laser diode element is preferable. Thereby, a light emitting device having a very high light emission output can be obtained. For example, it is preferable to emit light having a main emission peak wavelength of about 350 nm to 550 nm. Thereby, as will be described later, it is possible to use a fluorescent material having a good wavelength conversion efficiency, and as a result, it is possible to obtain a light emitting device having a high light emission output and to obtain light of various colors. . Furthermore, deterioration of the wavelength conversion member, which will be described later, can be prevented, and a long-life and highly reliable light-emitting device can be obtained.

A semiconductor light emitting device is usually configured by laminating a semiconductor layer on a substrate.
As a substrate, in order to form a nitride semiconductor with good crystallinity with high productivity, it is preferable to use a sapphire substrate having a C-plane, R-plane, or A-plane as a main surface. Further, for example, an insulating substrate such as spinel (MgA1 ₂ O ₄ ) having any one of the C-plane, R-plane, and A-plane as its main surface, SiC (including 6H, 4H, 3C), ZnS, ZnO, GaAs It is possible to grow a nitride semiconductor such as an oxide substrate lattice-matched with Si, GaN, and a nitride semiconductor, which is conventionally known, and a material different from a nitride semiconductor may be used. Further, the substrate may be off-angled. In this case, it is preferable to use a step-off-angle substrate because the underlayer made of gallium nitride grows with good crystallinity.

  In the case of using a substrate different from the nitride semiconductor, after growing a nitride semiconductor (buffer layer, base layer, etc.) serving as a base layer before forming the device structure on the heterogeneous substrate, polishing the heterogeneous substrate, etc. It may be removed by a method to form a single substrate of a nitride semiconductor (for example, GaN), or a heterogeneous substrate may be removed after the element structure is formed.

  By forming a base layer made of a buffer layer (low temperature growth layer) and / or a nitride semiconductor (preferably GaN) on a heterogeneous substrate, the growth of the nitride semiconductor constituting the device structure becomes good, With such a pn junction made of a nitride semiconductor, light in the ultraviolet region can be efficiently emitted.

Examples of the buffer layer include a non-single crystal layer obtained by growing GaN, AlN, GaAIN, or the like at a low temperature.
As a base layer (growth substrate) provided on a different substrate, ELOG (Epitaxially Laterally Overgrowth) growth may be performed. For example, a nitride semiconductor layer is arbitrarily grown on a heterogeneous substrate, and a stripe-shaped mask region is formed on the surface of the nitride semiconductor layer by using a protective film (for example, SiO ₂ or the like) on which the nitride semiconductor is difficult to grow (for example, This is realized by forming a non-mask region for growing a nitride semiconductor and growing a nitride semiconductor layer on the protective film, so as to be substantially perpendicular to the orientation flat surface of the substrate) . By growing the nitride semiconductor from the non-mask region, the growth is performed in the lateral direction by selective growth, that is, in addition to the growth in the film thickness direction. A flat semiconductor layer can be formed. Alternatively, it can be realized by forming an opening in a nitride semiconductor layer grown on a different substrate and forming the nitride semiconductor layer on the substrate including the opening. That is, the nitride semiconductor is grown laterally from the side surface of the opening, and as a result, a substantially flat semiconductor layer can be formed.

Examples of the semiconductor layer formed on such a substrate include various semiconductors such as BN, SiC, ZnSe, GaN, InGaN, InAlGaN, AlGaN, BAlGaN, and BInAlGaN. Similarly, these elements can contain Si, Zn, or the like as an impurity element to serve as a light emission center.
In particular, as a material for a light-emitting layer that can efficiently emit a short wavelength of visible light (for example, blue) from an ultraviolet region that can excite a fluorescent material efficiently, a nitride semiconductor, particularly a group III nitride semiconductor (for example, , Al, a nitride semiconductor containing Ga, in, nitride semiconductor containing _{Ga, in X Al Y Ga 1} -XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) can be mentioned as more preferable. Alternatively, a gallium nitride compound semiconductor partially substituted with B or P may be used. By appropriately setting the type of semiconductor and the mixed crystal ratio thereof, the emission wavelength of the obtained light-emitting element can be adjusted. For example, depending on the composition of the active layer, the main emission peak is about 350 to 550 nm, preferably about 350 to 500 nm, about 360 to 500 nm, and particularly by changing the In content in the active layer in the range of about 420 to 490 nm. Light having a wavelength can be obtained.

The semiconductor layer may have a single layer structure, but a homostructure having a MIS junction, PIN junction, PN junction, etc., a heterostructure, or a double heterostructure is preferably used. Furthermore, it may be a multi-layer laminated structure or a superlattice structure, or may be a single quantum well structure or a multi-quantum well structure laminated on a thin film in which a quantum effect occurs.
These semiconductor layers can be formed by known techniques such as metal organic chemical vapor deposition (MOCVD), hydride vapor deposition (HVPE), molecular beam epitaxy (MBE), and the like. The thickness of the semiconductor layer is not particularly limited, and various thicknesses can be applied.

  For example, a plurality of first contact layers made of n-type gallium nitride, first clad layers made of n-type aluminum nitride / gallium, well layers made of indium nitride / aluminum / gallium or InGaN, and barrier layers made of aluminum / gallium nitride or GaN Examples thereof include an active layer having a multi-quantum well structure in which layers are stacked, a second cladding layer made of p-type aluminum nitride / gallium, and a second heterostructure in which a second contact layer made of p-type gallium nitride is stacked in this order.

Note that the nitride semiconductor exhibits n-type conductivity without being doped with impurities. When forming an n-type nitride semiconductor for the purpose of improving luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, etc. as an n-type dopant. On the other hand, when forming a p-type nitride semiconductor, it is preferable to dope p-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba. For example, the impurity concentration is about 10 ¹⁵ to 10 ²¹ / cm ³ , and particularly about 10 ¹⁷ to 10 ²⁰ / cm ³ as the contact layer. Since a nitride semiconductor is difficult to be converted to a p-type simply by doping with a p-type dopant, it is preferable to reduce the resistance by heating in a furnace or plasma irradiation after the introduction of the p-type dopant.

  When an insulating substrate is used as the substrate, etching is performed from the surface side of the second contact layer to expose the first contact layer, and the first and second contact layers are respectively formed on the first and second contact layers. A light emitting element made of a nitride semiconductor can be formed by forming electrodes and cutting them into chips. Further, when the insulating substrate is removed or a conductive substrate is used, etching from the surface side of the second contact layer for exposing the first contact layer is not necessary, and the second contact layer The second electrode may be formed on the surface of the substrate, and the first electrode may be formed on the back surface of the substrate.

  In particular, it is preferable that the second electrode formed on the second contact layer is formed almost entirely as an ohmic electrode. Further, it is preferable that the sheet resistance Rp of the second electrode is adjusted so as to satisfy the relationship of Rp ≧ Rn with the sheet resistance Rn of the first contact layer, for example, the n-type contact layer. Usually, since the n-type contact layer is formed with a film thickness of, for example, 3 to 10 μm, and further 4 to 6 μm, the sheet resistance Rn is estimated to be 10 to 15Ω / □, so that Rp is a sheet resistance higher than this. It is preferable to form a thin film so as to have a value. Specifically, about 150 micrometers or less are mentioned.

  As described above, when the p electrode and the n-type contact layer have a relationship of Rp ≧ Rn, an extended conductive portion is formed on the p electrode in order to diffuse the current over the entire p layer and efficiently emit the entire active layer. It is preferable to provide a p-side pad electrode having Thereby, the external quantum efficiency can be further improved. The shape of the extended conductive portion is not particularly limited, and examples thereof include a linear shape, a curved shape, a lattice shape, a branch shape, a saddle shape, and a mesh shape. These shapes are preferable because the area that blocks light can be reduced. Since the light shielding effect increases in proportion to the total area of the p-side pad electrode, it is preferable to design the line width and length so that the light shielding effect does not exceed the light emission enhancing effect.

Furthermore, the second electrode is preferably formed of a translucent material. For example, a single layer film or a multilayer film of a metal or an alloy including one selected from the group consisting of ITO, ZnO, In ₂ O ₃ , SnO ₂ , gold, and platinum group elements can be given. In particular, when it is formed of a multilayer film or alloy comprising a metal or alloy containing one selected from the group of gold and platinum group elements and at least one other element, the contained gold or platinum The sheet resistance Rp of the p electrode can be adjusted according to the content of the group element, and the stability and reproducibility of the electrode can be improved. However, since gold or a metal element has a high absorption coefficient in the wavelength region of 300 to 550 nm, the transparency is improved by reducing the content thereof. The relationship between Rp and Rn can be determined from the state of the light intensity distribution during light emission of the light emitting element.

Further, as the semiconductor light emitting element, a semiconductor laser element in which a ridge stripe is formed above the active layer, the active layer is sandwiched between the guide layers, and a resonator end face is provided may be used.
Specifically, the following configurations are exemplified.
On the substrate described above, an n-type contact layer, a crack prevention layer, an n-type cladding layer, and an n-type light guide layer, which are n-type nitride semiconductor layers, are optionally formed via a buffer layer. Other layers other than the n-type cladding layer may be omitted depending on the element. The n-type nitride semiconductor layer needs to have a wider band gap than that of the active layer at least in a portion in contact with the active layer, and therefore, preferably has a composition containing Al. For example, there is an n-type Al _y Ga _1-y N (0 ≦ y <1) layer (the value of y may be different for each layer). Each layer may be grown while being doped with n-type impurities to be n-type, or may be grown undoped to be n-type.

An active layer is formed on the n-type nitride semiconductor layer. The active layer is an In _x1 Al _y1 Ga _1-x1-y1 N well layer (0 ≦ x ₁ ≦ 1, 0 ≦ y ₁ ≦ 1, 0 ≦ x ₁ + y ₁ ≦ 1) and In _x2 Al _y2 Ga _{1-x2 -y2} N barrier layer (0 ≦ x ₂ ≦ 1, 0 ≦ y ₁ ≦ 1, 0 ≦ x ₁ + y ₁ ≦ 1, x ₁ > x ₂ ) is an appropriate number of times in the order of barrier layer / well layer / barrier layer It is preferable to have an MQW structure that is alternately and repeatedly stacked. Normally, both ends of the active layer are barrier layers.

The well layer is formed undoped. On the other hand, except for the final barrier layer adjacent to the p-type nitride semiconductor layer, all the barrier layers are doped with n-type impurities such as Si and Sn (preferably 1 × 10 ¹⁷ to 1 × 10 ¹⁹ cm ⁻³ ). And the final barrier layer is grown undoped. In the final barrier layer, p-type impurities such as Mg are diffused from adjacent p-type nitride semiconductor layers (for example, 1 × 10 ¹⁶ to 1 × 10 ¹⁹ cm ⁻³ ). Since the barrier layer except the final barrier layer is doped with n-type impurities, the initial electron concentration in the active layer is increased, the efficiency of electron injection into the well layer is increased, and the laser emission efficiency is improved. On the other hand, since the final barrier layer is closest to the p-type nitride semiconductor layer, it does not contribute to electron injection into the well layer. Therefore, the hole injection efficiency into the well layer can be increased by not doping the final barrier layer with the n-type impurity but rather by substantially doping the p-type impurity by diffusion from the p-type nitride semiconductor layer. In addition, by not doping the final barrier layer with n-type impurities, it is possible to prevent different types of impurities from being mixed in the barrier layer and lowering the carrier mobility. However, when the final barrier layer is grown, it may be grown while doping a p-type impurity such as Mg at a concentration of 1 × 10 ¹⁹ cm ⁻³ or less. The final barrier layer is preferably formed thicker than the other barrier layers in order to suppress the influence of decomposition of the active layer containing In caused by gas etching when growing the p-type nitride semiconductor layer. For example, it is preferably 1.1 to 10 times, more preferably 1.1 to 5 times that of the other barrier layers.

A p-type electron confinement layer, a p-type light guide layer, a p-type cladding layer, and a p-type contact layer are formed on the final barrier layer as a p-type nitride semiconductor layer. Other layers other than the p-type cladding layer may be omitted depending on the element. The p-type nitride semiconductor layer needs to have a wider band gap than that of the active layer at least in a portion in contact with the active layer, and therefore, it is preferably a composition containing Al. For example, p-type _{Al z Ga 1-z N (} 0 ≦ z <1) layer (value of z for each layer may be different) can be mentioned. Thereby, a so-called double heterostructure is formed. Each layer may be grown while doping with p-type impurities to be p-type, or p-type impurities may be diffused from other adjacent layers to be p-type.

The p-type electron confinement layer is made of a p-type nitride semiconductor having an Al mixed crystal ratio higher than that of the p-type cladding layer, and preferably has a composition of Al _x Ga _1-x N (0.1 <x <0.5). Have. Further, a p-type impurity such as Mg is doped at a high concentration, preferably 5 × 10 ¹⁷ to 1 × 10 ¹⁹ cm ⁻³ . Thereby, the p-type electron confinement layer can effectively confine electrons in the active layer, and lowers the threshold of the laser. Further, the p-type electron confinement layer may be grown as a thin film of about 30 to 200 mm, and if it is a thin film, it can be grown at a lower temperature than the p-type light guide layer and the p-type optical cladding layer. Therefore, by forming the p-type electron confinement layer, decomposition of the active layer containing In can be suppressed as compared with the case where the p-type light guide layer or the like is formed directly on the active layer.

  Of the p-type nitride semiconductor layer, a ridge stripe is formed up to the middle of the p-type light guide layer, and further, a protective film, a p-electrode, an n-electrode, a p-pad electrode, an n-pad electrode, and the like are formed. Is configured.

The light guide light guide leads light emitted from the excitation light source to the wavelength conversion member.
The light guide can freely change its length and its shape can be freely deformed, in particular it can be bent or curved at right angles, so that the light is guided to the desired position Can do. Accordingly, any material and configuration may be used as long as it can do this. In particular, it is preferable from the viewpoint of energy efficiency that the light emitted from the excitation light source is transmitted without being attenuated.

  Examples of the light guide include an extremely thin glass fiber used as a light transmission path when transmitting light, and a combination of a material having a high refractive index and a material having a low refractive index, The thing using a high member can be used. In particular, a double structure that surrounds the central part (core) of the cross section with a peripheral part (cladding) is preferable, and a core whose refractive index is higher than the refractive index of the cladding sends the optical signal without attenuation. From the viewpoint that can be achieved. The light guide preferably has a higher core occupancy than a clad occupancy from the viewpoint of reducing the light density at the end face of the light guide. Further, from the viewpoint of preventing return light to the light guide, a smaller cladding diameter is preferable. For example, the core diameter is about 1000 μm or less, the cladding diameter (including the core diameter) is about 1200 μm or less, the core diameter is about 400 μm or less, and the cladding diameter (including the core diameter) is about 450 μm or less. Specific examples include core / clad = 114/125 (μm), 72/80 (μm), and the like.

The light guide may be either a single fiber or a multi-wire fiber, but is preferably a single fiber. Moreover, either a single mode fiber or a multimode fiber may be used, but a multimode fiber is preferable.
The material of the light guide is not particularly limited, and examples thereof include quartz glass and plastic. Among these, the core material is preferably composed of pure silica (pure quartz). Thereby, transmission loss can be suppressed.

  Further, from the viewpoint of reducing the light density at the end of the light guide, the light guide has the centers of the cores 20a and 120a only at the ends of the light guides 20 and 120, as shown in FIGS. A core having a larger core diameter than the core, for example, a TEC fiber (clad 20b diameter is constant), a tapered fiber (clad 120b diameter is tapered), etc. The thing which has a core diameter about twice is mentioned. Thereby, degradation of the fiber itself at the light guide end can be prevented. Furthermore, it is possible to prevent the wavelength conversion member and the like disposed at the end of the light guide from being deteriorated, and to irradiate the wavelength conversion member with light uniformly and efficiently.

Wavelength conversion member The wavelength conversion member absorbs part or all of the excitation light emitted from the excitation light source, converts the wavelength, and converts light in a longer wavelength range than the excitation light from each laser element, for example, red, green , Blue, yellow, blue-green, orange and the like can emit light having an emission spectrum. Therefore, the wavelength conversion member should just be comprised with the material which can implement | achieve such a function.

  It is preferable that the wavelength conversion member is made of a material obtained as white light, regardless of the wavelength of the excitation light, through the light obtained through the wavelength conversion member. In order to obtain good color rendering properties, the material is preferably made of a material having an average color rendering index (Ra) of irradiation light of 80 or more. Here, the color rendering property means the property of the light source that affects the appearance of the color of the object illuminated by a certain light source. Good color rendering property is generally the color of the object illuminated by sunlight. (Refer to Ohm Co., Ltd., “Phosphor Handbook”, p429). Color rendering properties can be improved by using a phosphor layer, which will be described later, in combination with the light emitting element. The average color rendering index (Ra) is obtained based on an average value of color misregistration when eight types of color charts are illuminated by the sample light source and the reference light source, respectively.

  The color tone of the obtained light can be adjusted, for example, by combining light of three primary colors (blue, green, red). Further, it can be adjusted by combining two colors of light such as blue and yellow, blue-green and red, green and red, blue-purple and yellow-green, which are complementary colors. Here, the complementary color means two colors on the opposite sides of the white point in the chromaticity diagram. Note that the light of each color for adjusting the color tone does not necessarily have to be light whose wavelength has been converted by the wavelength conversion member, and excitation light itself obtained from an excitation light source may be used. In the present invention, the relationship between the color of light and the wavelength conforms to JIS Z8110.

  The wavelength conversion member is mainly composed of, for example, a fluorescent material, a pigment, or the like. In particular, by using a fluorescent material, it is possible to obtain a light-emitting device that is excellent in both emission luminance and color rendering properties. When the fluorescent material is substantially composed of only a fluorescent material, deterioration due to irradiation with excitation light having a high light density. Can be minimized.

(Fluorescent materials, etc.)
The fluorescent substance is not particularly limited as long as it can be excited by an excitation light source, but it is preferable to use at least one kind of each excitation light and a combination of two kinds. For example,
(i) alkaline earth metal halogen apatite,
(ii) alkaline earth metal halogen borate,
(iii) alkaline earth metal aluminate,
(iv) oxynitrides or nitrides,
(v) alkaline earth silicate, alkaline earth silicon nitride,
(vi) sulfides,
(vii) alkaline earth thiogallate,
(viii) germanate,
(ix) rare earth aluminate,
(x) rare earth silicates,
(xi) Various fluorescent materials such as organic and organic complexes mainly activated with a lanthanoid element such as Eu.

(i) The alkaline earth metal halogen apatite fluorescent material is preferably mainly activated by a lanthanoid-based element such as Eu or a transition metal-based element such as Mn.
M ₅ (PO ₄ ) ₃ X: R _E
(M includes at least one selected from Sr, Ca, Ba, Mg and Zn. X represents at least one selected from F, Cl, Br and I. R _E represents Eu and (Or Mn)
Etc.
For example, calcium chlorapatite (CCA), barium chlorapatite (BCA), etc. are exemplified, and specifically, Ca ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, (Ba, Ca) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu and the like.

(ii) Alkaline earth metal halogen borate fluorescent substance
M ₂ B ₅ O ₉ X: R _E
(M, X, and _RE are as defined above) and the like.
For example, calcium chlorborate (CCB) is exemplified, and specific examples include Ca ₂ B ₅ O ₉ Cl: Eu.

(iii) Alkaline earth metal aluminate fluorescent materials include europium activated strontium aluminate (SAE), europium activated barium magnesium aluminate (BAM), or
SrAl ₂ O ₄ : R _E ,
Sr ₄ Al ₁₄ O ₂₅ : R _E ,
CaAl ₂ O ₄ : R _E ,
BaMg ₂ Al ₁₆ O ₂₇ : R _E ,
BaMgAl ₁₀ O ₁₇ : R _E
( _RE is as defined above) and the like.

(iv) As the oxynitride fluorescent substance, those mainly activated by rare earth elements are preferable, and contain at least one group II element and at least one group IV element. The combination of these elements is not particularly limited, for example, the following composition,
_{L x J y O z N (} (2/3) x + (4/3) y- (2/3) z): R or _{L x J y Q t O z} N ((2/3) x + (4 / _{3) y + t- (2/3) z)} : R
(L is at least one group II element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Zn. J consists of C, Si, Ge, Sn, Ti, Zr, and Hf. At least one Group IV element selected from the group, Q is at least one Group III element selected from the group consisting of B, Al, Ga, and In, and R is Y, La, Ce , Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Lu, Sc, Yb, and Tm. At least one rare earth element selected from the group consisting of 0.5 <x <1.5. 1.5 <y <2.5, 0 <t <0.5, 1.5 <z <2.5.)
The thing represented by is mentioned.

In the formula, when x, y, and z are in the above-described ranges, high luminance is exhibited, and in particular, an oxynitride phosphor represented by x = 1, y = 2, and z = 2 exhibits higher luminance. Therefore, it is more preferable. However, it is not limited to the said range, Arbitrary things can be used.
Specifically, an oxynitride phosphor having alpha sialon as a base material, an oxynitride phosphor having beta sialon as a base material, Eu activated calcium aluminum silicon nitride represented by a composition formula of CaAlSiN ₃ : Eu, and the like Is mentioned.

  The nitride fluorescent material is preferably activated by a rare earth element. This phosphor is a nitride phosphor containing at least one Group II element, at least one Group IV element, and N, and containing B in the range of 1 to 10,000 ppm. Are listed. Alternatively, oxygen may be included in the composition of the nitride fluorescent material.

  Among them, nitride phosphors composed of Ca and / or Sr, Si, and N, such as calcium silicon nitride (CESN), strontium silicon nitride (SESN), calcium strontium silicon nitride (SCESN), Those activated by Eu and those containing B in the range of 1 to 10000 ppm are preferable. A part of Eu may be substituted with at least one rare earth element described above. A part of Ca and / or Sr may be substituted with at least one group II element described above. A part of Si may be substituted with at least one Group IV element described above.

In particular,
_{L x J y N ((2/3} ) x + (4/3) y): R or _{L x J y O z N (} (2/3) x + (4/3) y- (2/3) z) : R
(L, J, and R are as defined above. X, y, and z are 0.5 ≦ x ≦ 3, 1.5 ≦ y ≦ 8, and 0 <z ≦ 3). A nitride fluorescent material containing B in the range of 1 to 10000 ppm is preferable.

(v) As alkaline earth silicate and alkaline earth silicon nitride,
M ₂ Si ₅ N ₈ : Eu,
MSi ₇ N ₁₀ : Eu,
M _1.8 Si ₅ O _0.2 N ₈ : Eu,
M _0.9 Si ₇ O _0.1 N ₁₀ : Eu
(M is as defined above).

(vi) As sulfides, alkaline earth sulfides such as CaS: Eu, SrS: Eu, La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, Gd ₂ O ₂ S: Eu, ZnS : Eu, ZnS: Mn, ZnCdS: Cu, ZnCdS: Ag, Al, ZnCdS: Cu, Al, etc.

(vii) As alkaline earth thiogallate,
MGa ₂ S ₄ : Eu
(M is as defined above).

(viii) Examples of the germanate include 3.5MgO.0.5MgF ₂ .GeO ₂ : Mn, Zn ₂ GeO ₄ : Mn, and the like.

(ix) The rare earth aluminate is preferably activated mainly by a lanthanoid element such as Ce, such as yttrium aluminum garnet (YAG), lutetium aluminum garnet (LAG), specifically Y ₃ Al. ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce Y ₃ (Al, Sc) ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce (including those in which Y is partially or completely substituted with Lu, and those in which Ce is partially or completely substituted with Tb) _{other, Tb 3 Al 5 O 12:} Ce, Gd 3 (Al, Ga) 5 O 12: Ce and the like.

Examples of (x) rare earth silicates include Y ₂ SiO ₅ : Ce, Y ₂ SiO ₅ : Tb.

  (xi) The organic and organic complexes are not particularly limited, and any known one may be used. Preferably, it is mainly activated with a lanthanoid element such as Eu, but optionally, instead of or in addition to Eu, the above-mentioned rare earth elements and Cu, Ag, Au, Cr, Co, Ni, Ti and Mn You may use at least 1 sort (s) selected from the group which consists of.

Among them, rare earth aluminate fluorescent materials mainly activated by lanthanoid elements such as Ce in (ix), in particular, Y ₃ Al ₅ O ₁₂ : Ce, (Y 2 _, Gd) ₃ Al ₅ O ₁₂ : Ce, etc. YAG-based fluorescent material represented by the composition formula (including those in which Y is partially or completely substituted with Lu, and those in which Ce is partially or completely substituted with Tb), (iv) mainly activated by rare earth elements Oxynitrides or nitride phosphors, in particular of the general formula
L _x J _y N _{((2/3) x + (4/3) y)} : R or
L _x J _y O _Z N _{((2/3) x + (4/3) y- (2/3) z)} : R
(L, J, R, x, y, and z are as defined above).

  Since the nitride fluorescent material is excited by light on the short wavelength side of visible light from ultraviolet, and can emit light on the long wavelength side of visible light, the color rendering property can be improved. In addition, since the rare earth aluminate fluorescent material has high heat resistance, it can emit stable light and has high wavelength conversion efficiency, so that light can be extracted with high efficiency. Furthermore, by using these fluorescent materials in combination, light having a high color rendering property, for example, an average color rendering index (Ra) of 80 or more can be obtained.

Also,
(i) a combination of at least one of CCA, (ii) CCB and (iii) BAM and (ix) YAG,
(iii) a combination of SAE and (i) CCA: Mn,
(iii) a combination of SAE and (iv) SESN,
(iii) a combination of SAE and (iv) SCESN,
(iii) a combination of SAE and (iv) CESN,
(i) a combination of CCA, (ix) LAG and (iv) SESN,
(i) a combination of CCA, (ix) LAG and (iv) SCESN,
(i) a combination of CCA, (ix) LAG and (iv) CESN,
(i) a combination of CCA, (ix) LAG, and (iv) CaAlSiN ₃ : Eu,
(ix) A combination of LAG and (iv) SESN,
(ix) a combination of LAG and (iv) SCESN,
(ix) a combination of LAG and (iv) CESN,
A combination of (ix) LAG and (iv) CaAlSiN ₃ : Eu is preferable.
Thereby, both high efficiency and high color rendering properties can be realized.

Furthermore, it is preferable to contain at least one fluorescent material having good temperature characteristics. Here, "the one having good temperature characteristics" means that the luminance does not decrease remarkably even when the temperature of the wavelength conversion member is increased by laser light irradiation, compared to the luminance of the wavelength conversion member at room temperature. To do. Specifically, the wavelength conversion member has a luminance maintenance rate at 250 ° C. of 50% or more, preferably 55% or more, 60% or more, 65% or more, or 70% or more with respect to the luminance maintenance rate at room temperature. Things. Further, the wavelength conversion member has a luminance maintenance rate at 300 ° C. of 30% or more, preferably 35% or more, 40% or more, 45% or more, or 50% or more with respect to the luminance maintenance rate at room temperature. It is done. More preferably, the luminance maintenance factor at 250 ° C. is 50% or more, preferably 55% or more, 60% or more, 65% or more, or 70% or more, and the luminance maintenance factor at 300 ° C. Examples include those of 30% or more, preferably 35% or more, 40% or more, 45% or more, or 50% or more with respect to room temperature. Typical examples of such fluorescent materials include LAG, BAM, YAG, CCA, SCA, SCESN, SESN, CESN, and CaAlSiN ₃ : Eu. Of these, LAG, BAM, BAM: Mn, CaAlSiN ₃ : Eu and the like are preferable. Thereby, higher luminance can be realized.
A fluorescent substance other than the above-described fluorescent substance, which has the same performance and effect, can also be used.

When two or more fluorescent substances are used in combination, as described later, each fluorescent substance may be added alone, for example, to the covering member, or two or more kinds may be added to the covering member in combination. May be. In this case, the usage ratio of the fluorescent substance to be combined can be appropriately adjusted depending on the wavelength of the excitation light source used, the emission intensity, the color tone of the light to be obtained, and the like.
For example, when LAG and SESN, SCESN or CaAlSiN ₃ : Eu are used in combination, a weight ratio of about 50: 1 to 1:50, 30: 1 to 1:30, 50: 1 to 1: 1, It is preferable to combine them at a weight ratio of about 30: 1 to 1: 1. When LAG and CCA are used in combination with SESN, SCESN or CaAlSiN ₃ : Eu, LAG and CCA are in a weight ratio of about 1:10 to 10: 1, and more preferably 1: 5 to 5: 1. It is preferable to combine them at a weight ratio of about 10: 1 to 1: 1, 5: 1 to 1: 1, and LAG and SESN, SCESN, or CaAlSiN ₃ : Eu can be in the same range as described above.

As a specific aspect of the wavelength conversion member in the present invention,
For example, it is preferable to use a combination of LAG (green light emission) and SCESN or SESN (red light emission). Thus, by combining blue excitation light (for example, a light emitting element having an emission peak in the range of 430 to 500 nm), the three primary colors can be secured, and light that emits white light with good color rendering is obtained. be able to.

(Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu (blue light emission), LAG or BaSi ₂ O ₂ N ₂ : Eu (green to yellow light emission) and SCESN (red light emission) are combined; CCA, CCB, BAM (blue light emission) and YAG (yellow light emission) are combined; CCA, CCB or BAM, etc. (blue light emission), LAG (green light emission), and SCESN (red light emission) are combined from the incident light side. It is preferable to arrange and use in this order. Accordingly, when combined with a light emitting element having a light emission peak wavelength in the range of 360 to 420 nm in the short wavelength region of visible light, light that emits white light with good color rendering can be obtained.

  In addition, the light of each color can implement | achieve desired white light by changing the compounding ratio of the fluorescent substance to be used. In particular, in the case of a combination of CCA or the like (blue light emission) and YAG (yellow light emission), for example, it is preferably used in a weight ratio of about 1 to 20: 1, more preferably about 5 to 10: 1. As a result, the luminous efficiency can be increased.

Further, it is preferable to use a combination of LAG (green light emission) and SESN, SCESN, or CaAlSiN ₃ : Eu (red light emission). Thereby, luminous efficiency can be further improved by combining with the light emitting element which has a light emission peak wavelength in 450 nm vicinity (for example, 420-460 nm).

  In addition, when a fluorescent substance that emits yellow light and a fluorescent substance that emits red light are used in combination, excitation emitted from the light emitting element by combining with a light emitting element having an emission peak wavelength near 450 nm in the short wavelength region of visible light. The mixed light of the light and the light emitted from the fluorescent material is led out to the outside as light from the wavelength conversion member. This light becomes reddish white light.

  When a fluorescent substance that emits light from green to yellow is used, it is preferably used in combination with a light-emitting element having an emission peak wavelength near 450 nm (440 to 470 nm) in the short wavelength region of visible light, for example, 445 nm. Thereby, the excitation light from the light emitting element and the yellow light converted from the excitation light are combined, and the light becomes white light. Thus, by utilizing a part of the excitation light, absorption of light during wavelength conversion can be avoided, and luminous efficiency can be increased.

  When a fluorescent material that emits blue light and a fluorescent material that emits yellow light are used in combination, white light emitted from the wavelength conversion member is emitted by combining with a light emitting element having an emission peak wavelength near 375 nm in the ultraviolet region. It becomes. Since ultraviolet rays are invisible to the human eye, only light emitted from a fluorescent substance whose wavelength is converted to visible light becomes light.

  Further, (1) a light emitting element having an emission peak wavelength in the vicinity of 400 nm (for example, 370 to 420 nm) in the short wavelength region of visible light, and (2) emitting blue light by the light from the light emitting element (for example, 460 nm), (3) fluorescent material excited by blue light to emit green light (eg, 520 to 540 nm), (4) excited by blue light to emit yellow light (eg, 550 to 580 nm) (5) When used in combination with a fluorescent material that is excited by blue light and emits red light (for example, 640 to 660 nm), the light emitted from the wavelength conversion member is mainly white light. In particular, it is preferable to arrange these fluorescent materials in this order from the incident light side. This combination can increase the luminous efficiency. In particular, when (1), (2) and (4) are used in combination, the luminous efficiency can be further increased. Further, when (1) to (3) and (5) are used in combination, color rendering can be increased. In these cases, the excitation light of the light emitting element is not used as the color component of the light, and white can be obtained only by the light converted by the fluorescent material. Therefore, the color temperature and chromaticity coordinates are determined by the light output of the light emitting element. The white intensity can be adjusted without changing.

Examples of the pigment include fluorescent dyes such as dyes and perylene.
Such fluorescent substances, pigments, and the like usually have a particle size in the range of about 1 μm to 20 μm in order to maximize the light absorption rate and conversion efficiency without forming aggregates. About 2 μm to 8 μm is preferable, and about 5 μm to 8 μm is more preferable. In addition, the mass productivity of the light-emitting device can be improved by using a fluorescent material having a relatively large particle diameter. Here, the particle size refers to the average particle size obtained by the air permeation method. Specifically, in an environment with an air temperature of 25 ° C. and a humidity of 70%, a sample of 1 cm ³ is weighed and packed in a special tubular container, and then a constant pressure of dry air is flowed to read the specific surface area from the differential pressure. It is a value converted into an average particle diameter.

(Coating member)
The wavelength conversion member of the present invention can be formed by mixing a fluorescent material or the like with a covering member.
Examples of the covering member include inorganic substances such as inorganic glass, yttria sol, alumina sol, and silica sol; polyolefin resin, polycarbonate resin, polystyrene resin, epoxy resin, acrylic resin, acrylate resin, methacrylic resin (PMMA, etc.), urethane resin, Examples thereof include one or more resins such as polyimide resin, polynorbornene resin, fluororesin, silicone resin, modified silicone resin, and knitted epoxy resin, and organic substances such as liquid crystal polymer. These covering members are preferably those excellent in heat resistance, light resistance, weather resistance, translucency and the like. Among these, a fluororesin, a silicone resin (particularly a dimethylsiloxane resin, a methylpolysiloxane resin, and the like) can be given.

  When the wavelength conversion member is composed of a fluorescent substance or the like and a resin that is a covering member, the fluorescent substance or the like and the resin are within a range of a weight ratio of about 0.1 to 10: 1, and 0.5 It is preferable to mix in the range of weight ratio of about 10: 1, about 1-3: 1, and about 1.5-2.5: 1. However, as will be described later, when the wavelength conversion member is formed in a laminated structure, the ratio of the fluorescent material or the like and the resin in each layer is not necessarily the same. For example, in consideration of the properties of the fluorescent substance such as heat resistance, light resistance and refractive index, resin itself, and the like, the materials to be used and the ratio thereof can be appropriately adjusted.

(Filler)
The wavelength conversion member in the present invention may be composed of only the fluorescent material as described above, but may optionally be mixed with a filler. Thereby, the wavelength conversion member can be easily fixed to the light guide. In addition, since the wavelength conversion member can be arranged uniformly, a light emitting device with less color unevenness can be obtained. The filler is preferably a material capable of reflecting, scattering and / or diffusing light irradiated from the outside. As a result, the excitation light can be uniformly applied to the fluorescent substance and the like, and the color unevenness is reduced.

  Fillers include silica (fume silica, precipitated silica, fused silica, crystalline silica, ultrafine amorphous silica, anhydrous silicic acid, etc.), quartz, titanium oxide, tin oxide, zinc oxide, tin monoxide, calcium oxide, magnesium oxide , Metal nitrides such as beryllium oxide, aluminum oxide, boron nitride, silicon nitride, aluminum nitride, metal carbides such as SiC, metal carbonates such as calcium carbonate, potassium carbonate, sodium carbonate, magnesium carbonate, barium carbonate, aluminum hydroxide , Metal hydroxides such as magnesium hydroxide, aluminum borate, barium titanate, calcium phosphate, calcium silicate, clay, gypsum, barium sulfate, mica, diatomaceous earth, white clay, inorganic balloon, talc, lithopone, zeolite, halloysite, fluorescent substance , Metal pieces (silver powder, etc.) It is below. In order to obtain strength, needle-like fillers such as potassium titanate, barium silicate, and glass fiber may be used. Of these, barium titanate, titanium oxide, aluminum oxide, silicon oxide and the like are preferable.

  The particle size of the filler is not particularly limited. For example, a filler having a center particle size of 1 μm or more and less than 5 μm is a color that tends to occur when a diffused material with a large particle size is used because the light from the fluorescent material is diffusely reflected well. Unevenness can be suppressed. The filler having a center particle size of 1 nm or more and less than 1 μm has a low interference effect on the light wavelength from the light emitting element, but can increase the viscosity of the covering member, for example, a resin without lowering the luminous intensity. This makes it possible to disperse the fluorescent substance in the resin almost uniformly and maintain the state, and mass production with a high yield is possible even when using a fluorescent substance with a relatively large particle size that is difficult to handle. Can do. When a filler having a center particle size of 5 μm or more and 100 μm or less is contained in a covering member, for example, a resin, it can improve the chromaticity variation of the light-emitting element due to the light scattering action and can increase the thermal shock resistance of the resin. The filler can be formed in various shapes such as a spherical shape, a needle shape, and a flake shape in consideration of dispersibility and reflectivity.

  The filler preferably has the same particle size and / or shape as the fluorescent material. Here, the same particle size means a case where the difference in the center particle size of each particle is less than 20%, and the same shape means a circularity indicating an approximate degree of each particle size to a perfect circle. A case where the difference in the value of (circularity = perimeter length of a perfect circle equal to the projected area of the particle / perimeter length of the projected particle) is less than 20%. By using such a filler, the fluorescent material and the filler interact with each other, the fluorescent material and the like can be favorably dispersed in the covering member, for example, a resin, and color unevenness can be further suppressed. .

  The filler can be contained, for example, in an amount of 0.1 to 80% by weight, further 70% or less, 50% or less, 40% or less, or 30% or less by weight based on the total amount of the wavelength conversion member.

The wavelength conversion member is formed by, for example, mixing the above-described fluorescent material together with a filler and an appropriate solvent, firing it while heating it arbitrarily, forming by pressure, or electrodeposition. It is preferable that substantially only a fluorescent substance or the like is formed arbitrarily using a filler. That is, it is preferable not to use an organic substance as the covering member. Here, “substantially consisting only of a fluorescent material” means that the wavelength conversion member contains about 95% by weight or more of the fluorescent material, in other words, about 5% by weight or less of the organic material as the covering member. It means that it is contained only. Thereby, even if light with a high light density is continuously irradiated, deterioration due to this light can be minimized.
However, it is mixed in the resin that is the covering member, and if necessary, using a suitable solvent, a potting method, a spray method, a screen printing method, a stencil printing method, etc., and a casting method, a compression method, a transfer method, Desired shape by injection method, extrusion method, lamination method, calendar method, plus chip molding method such as injection mold method, vacuum coating method, powder spray coating method, electrostatic deposition method, electrophoretic deposition method, etc. You may form in.

  The wavelength conversion member may be formed of a single layer of one type of fluorescent material, or may be formed of a single layer in which two or more types of fluorescent materials are uniformly mixed, or one type of fluorescent material. Two or more monolayers containing the same may be laminated, or two or more monolayers in which two or more kinds of fluorescent substances are uniformly mixed may be laminated. When two or more single layers are laminated, the fluorescent material or the like contained in each layer may convert incident light having the same wavelength into outgoing light having the same wavelength. The incident light having the same wavelength may be converted into the outgoing light having the different wavelength, but the incident light having the different wavelength is preferably wavelength-converted to the outgoing light having the same or different wavelength. Thereby, it becomes possible to wavelength-convert all the light which injects into the wavelength conversion member and should be converted, and can perform a conversion wavelength more efficiently.

  As shown in FIG. 3A, the wavelength conversion member 30 may be configured by stacking sheet-like materials containing different types of fluorescent materials 31a and 31b, or as shown in FIG. 3B. As described above, the upper layer containing the fluorescent material 31b may be laminated so as to completely cover the lower layer containing the fluorescent material 31a different from the fluorescent material 31a. In addition, it is preferable that the wavelength conversion member 30 has a bowl shape protruding on the emission side. The luminance can be further improved by such a shape. The film thickness of the wavelength conversion member is not particularly limited, and can be appropriately adjusted depending on the material used. For example, when a fluorescent material or resin is formed in a thick film, the conversion efficiency can be improved, and as a result, the light emission efficiency can be increased. On the other hand, the light emission efficiency or the like may be impaired. Therefore, it is preferable to select an appropriate film thickness in consideration of these.

  As shown in FIG. 1, the wavelength conversion member 30 is preferably attached to the distal end portion of the light guide 20 for deriving the excitation light 1, that is, the output portion 21, but the connection portion between the excitation light source 10 and the light guide 20. You may attach to the emission part 12 of the excitation light 1 which is. In the latter case, the light guide can be used even at a location where the tip of the light guide becomes dirty. In addition, the wavelength conversion member can be easily replaced. Furthermore, productivity can be improved by providing the wavelength conversion member at various positions.

Further, as will be described later, when a plurality of excitation light sources (light emitting devices) are combined, the excitation light from each excitation light source is derived by a light guide, and the light emission sides are bundled to integrally form a single layer. Alternatively, the wavelength conversion member may be provided in multiple layers, or partially integrally in a single layer or multiple layers. Thereby, the process of giving a wavelength conversion member individually can be simplified.
Further, a wavelength conversion member may be provided in a part of the light guide to be described later, for example, by adding a fluorescent material or the like to the core material.

Lens In the light emitting device of the present invention, for example, as shown in FIG. 1, it is preferable that a lens 13 is provided between the laser element 11 and the emitting portion 12.
The lens may have any shape as long as the light emitted from the laser element is focused on the incident part of the light guide, and a plurality of lenses may be arranged side by side between the laser element and the emission part. The lens can be formed of inorganic glass, resin, or the like, and among them, inorganic glass is preferable. A lens is provided between the excitation light source and the light guide, and the excitation light emitted from the excitation light source via the lens can be led to the light guide, so that the excitation light emitted from the excitation light source is condensed and efficient. Well can be derived to the light guide.
The lens may contain a material that functions as a wavelength conversion member such as a fluorescent substance. As a result, the wavelength-converted excitation light is reliably condensed on the emitting portion by the lens function, so that the color variation can be eliminated and the wavelength conversion member can be manufactured at the same time by manufacturing the lens. Therefore, the manufacturing cost of the wavelength conversion member can be suppressed.

Conductive translucent film In the light emitting device of the present invention, a conductive translucent film is formed at a position in contact with the wavelength conversion member. Thereby, when the fluorescent substance etc. generate | occur | produces heat by irradiating the wavelength conversion member with excitation light with very high light density, it becomes possible to radiate heat effectively and quickly by the conductive light-transmitting film.
For example, as shown in FIGS. 3A and 3B, the conductive translucent film 32 is formed on a part or all of the light emitting surface between the light guide 20 and the wavelength conversion member 30 as shown in FIG. As shown to c), it is preferable to arrange | position to the one part or all part of the light-projection surface of the wavelength conversion member different from the side in which a light guide exists. In particular, it is more preferably formed so as to cover the entire area of the light guide from which the excitation light is emitted, between the light guide and the wavelength conversion member. Thus, when the excitation light from the light guide passes through the conductive light-transmitting film and is introduced into the wavelength conversion member, it is a conductive film without reducing the light intensity due to the property of being a light-transmitting film. Therefore, it is possible to release heat generated in the wavelength conversion member while effectively removing heat transmitted in the wavelength conversion member in the region with the highest light density. Specifically, since the light guide usually includes a light guide tip member as described later in the emission part, a conductive light-transmitting film is disposed on the emission side of the light guide tip member.
Examples of the conductive translucent film include at least one single-layer film or multiple films such as ITO, ZnO, In ₂ O ₃ , SnO ₂ , MgO, Al ₂ O ₃ , LaF ₃ , and CeF ₃ . Among these, a single layer film of ITO, ZnO, In ₂ O ₃ , SnO ₂ or MgO is preferable. These films are more preferably formed of a single crystal. Thereby, the adhesiveness or adhesiveness to a wavelength conversion member becomes more favorable, and the movement of the heat | fever to the electroconductive transparent film of a wavelength conversion member can be improved. A suitable film thickness is, for example, about 1000 to 10,000 mm.
The conductive translucent film can be formed by a conventionally known method. For example, sputtering method, reactive sputtering method, vacuum deposition method, ion beam assisted deposition method, ion plating method, laser ablation method, CVD method, spray method, spin coating method, dipping method or a combination of these methods and heat treatment Various methods can be used.
Note that the conductive translucent film may be used as a functional film or a functional member, which will be described later, as long as it has the above-described function and can exhibit the above-described function.

Light Guide Tip Member In the light emitting device of the present invention, the tip of the light guide, that is, the end not connected to the excitation light source is preferably supported by a light guide tip member usually called a ferrule. Such a light guide tip member makes it easy to fix light emitted from the light guide. Further, the luminous efficiency is improved according to the material and shape, and the assembly as a light emitting device is facilitated. Therefore, the light guide tip member may be formed of any material and shape as long as it can support the light guide.

The light guide tip member is made of any material having a high reflectance with respect to excitation light and / or wavelength-converted light, a high refractive index of light, a high thermal conductivity, or a material having two or more of these properties. Preferably it is formed. For example, a reflectance of 80% or more for excitation light and / or wavelength-converted light, n: a refractive index of 1.4 or more and / or 0.1 W / m · ° C. for light of about 350 to 500 nm What has the above heat conductivity is preferable. Specific examples include Ag, Al, ZrO ₂ , borosilicate glass, stainless steel (SUS), carbon, copper, and barium sulfate. In particular, when ZrO ₂ is used, the reflectivity is high, and it is easy to process so that the light guide passes. When stainless steel is used, it is easy to maintain the tensile strength. Therefore, it is preferably formed of ZrO ₂ or stainless steel (for example, SUS303).

  The light guide tip member may be, for example, a cylindrical shape surrounding the outer periphery of the light guide, or various functional films / members may be integrated with each other in order to provide various functions to the end surface of the light guide. It may be attached separately, or may be attached integrally or separately with a cover or cap for covering the end face of the light guide, various functional films / members, or the like. In addition, when the light guide tip member has a cylindrical shape, for example, the diameter is preferably 3 mm or less.

Functional film / member Not only when attaching to the light guide tip member described above, it is preferable to attach various functional films / members at appropriate positions in the light emitting device of the present invention. Examples of the functional film / member here include a wavelength conversion light reflection film, an excitation light reflection film, a diffusion prevention member, and a diffusion member.

  The wavelength-converted light reflecting film prevents the light converted in wavelength by the wavelength conversion member from returning to the excitation light incident side, and extracts the light returned to the excitation light incident side as light by reflecting it outside. Can be used. Therefore, the wavelength conversion reflection film is preferably formed of a material that allows only light having a specific wavelength to pass therethrough and reflects the specific wavelength, that is, the wavelength-converted light. Thereby, the light which returned to the excitation light incident side can be reflected, and the luminous efficiency can be improved. Moreover, it is preferable to arrange | position a wavelength conversion light reflection film at least in the excitation light introduction | transduction part of a wavelength conversion member.

  The excitation light reflecting film can be used for preventing excitation light from being directly irradiated to the outside, leakage of excitation light from an unintended portion, and the like. Thereby, for example, the luminous efficiency can be improved by returning the excitation light that has passed through the wavelength conversion member but was not wavelength-converted with a fluorescent substance or the like into the wavelength conversion member again. Therefore, the excitation light reflecting film is preferably formed of a material that allows only the wavelength-converted light having a specific wavelength to pass therethrough and reflects the excitation light. Moreover, it is preferable to arrange | position an excitation light reflection film in the derivation | leading-out part of the light which carried out the wavelength conversion of the wavelength conversion member. Thereby, the irradiation of the excitation light to the outside can be reduced, and the light emission efficiency can be improved.

  The diffusion preventing member can be used to prevent the excitation light and / or the wavelength-converted light from diffusing in an unintended direction. Therefore, it is preferable that the diffusion preventing member is made of a material and a shape that block excitation light or wavelength-converted light by 90% or more. For example, the light guide and the wavelength conversion member may be disposed so as to be sandwiched between the light guide and the wavelength conversion member at a joint or so as to surround a boundary portion between the light guide and the wavelength conversion member. You may arrange | position so that outer surfaces other than the wavelength conversion light irradiation part of a wavelength conversion member may be coat | covered.

The diffusing member can be used to radiate more excitation light to the fluorescent material of the wavelength conversion member by mainly diffusing the excitation light, thereby improving the light emission efficiency. Therefore, the diffusing member is preferably disposed between the light exit of the light guide and the wavelength conversion member. As the diffusing member, for example, among the above-described resins, those having a relatively high refractive index, those containing the above-described filler in the above-described resin, and the like can be used. Of these, silicone resins are preferred. Thereby, since the output of the light irradiated to a wavelength conversion member can be reduced and the burden of the wavelength acquisition conversion material per unit area can be reduced, luminous efficiency and linearity can be improved.
For example, the film thickness of the diffusing member can be appropriately adjusted depending on the core diameter of the light guide, the refractive index and thickness of the diffusing member used arbitrarily, the diameter of the wavelength conversion member, and the like.

Blocking member A blocking member may be attached to the light emitting device of the present invention. The blocking member preferably blocks 90% or more of light from the excitation light source. Thereby, only light of a predetermined wavelength can be extracted. For example, in the case of using a light emitting element that emits ultraviolet rays harmful to the human body, in order to block the ultraviolet rays, an ultraviolet absorber or a reflective agent or the like may be used as a blocking member and included in the wavelength conversion member in the light outlet portion. it can. Thereby, irradiation with ultraviolet rays or the like can be suppressed. Especially, it is preferable to use a reflective agent from a viewpoint which can improve luminous efficiency more.
In addition, since the blocking member also has a function as the above-described excitation light reflecting film, diffusion preventing film, and the like, it does not have to be strictly distinguished from these.

Embodiment of Light-Emitting Device As shown in FIG. 1, the light- emitting device of the present invention includes one excitation light source 10, one light guide 20, a conductive translucent film (not shown), and one wavelength conversion member. As shown in FIG. 4, at least two light emitting devices each including 30 may be combined to form the light emitting device 100. The number of unit combinations can be determined according to color rendering properties and output. In this light emitting device, as described above, the wavelength conversion member of each unit may be integrally formed.
The light emitting device of the present invention preferably has a brightness of about 120 lumens / mm ² or more.

Application of Light-Emitting Device The light-emitting device of the present invention can be used for various applications. For example, it may be used as a normal lighting fixture, illumination for mounting on a vehicle (specifically, a light source for a headlight, a tail lamp, etc.) You may utilize for the apparatus for treating while observing. Moreover, you may utilize for the fiberscope for observing a very narrow or dark space, for example, the inside of a nuclear reactor, the closed space of a ruin, etc. Furthermore, it can also be used as a light source in a member that is desired to avoid leakage of electric current, heat generation, etc., such as in the chambers of various vacuum devices. In addition, it can be used as a light-emitting device used in places where a point light source is required or where it is difficult to replace the light source.

  Therefore, this light emitting device uses an imaging member (that is, an electronic component (light receiving element) that converts an optical image into an electrical signal), specifically, a charge-coupled device (CCD), a CMOS image sensor (CMOS), or the like. Used with image sensors, image signal processing devices that convert electrical signals into image signals, indicators that display electrical signals or measured values, displays that output image signals and display images, computers that perform various processes and calculations, etc. can do. In particular, when an imaging element is used as the imaging member, the optical image of the subject can be handled easily.

For example, the light receiving element (for example, a photodiode) may be provided separately from the light emitting device, but is provided near the laser element in the excitation light source, around the light guide, or in the light guide tip member. Also good. Thereby, the light amount emitted from the laser element by the light receiving element is observed, and when the light amount is not more than the constant light amount, the constant light amount can be maintained by adjusting the current supplied to the laser element.
The light emitting device of the present invention has high brightness, little color variation, very good color reproducibility, and very high color rendering, and thus requires clear imaging as in an endoscope device. Excellent effect when used in combination with equipment.

The light emitting device of the present invention can also be used for visible light communication. That is, it is possible to construct a wireless environment by using visible light obtained by the light emitting device described above and adding a communication function to the light emitting device, for example. Thereby, since a laser element is used as an excitation light source, a modulation speed of several hundred MHz can be realized.
Furthermore, the light emitting device of the present invention can be used for an image display device that displays a color image on an image display unit (screen). The light-emitting device of the present invention can emit extremely high-luminance light with high luminous efficiency, and thus can exhibit excellent effects as a light source for an image display device.

Hereinafter, specific examples of the light-emitting device of the present invention will be described in detail with reference to the drawings.
Example 1
As shown in FIG. 1, the light emitting device of this embodiment includes an excitation light source 10, a light guide 20, a conductive translucent film (not shown), and a wavelength conversion member 30. .
The excitation light source 10 uses a laser diode as the semiconductor light emitting element 11 having an emission peak wavelength in the vicinity of 405 nm. The laser diode is a GaN-based semiconductor element.
One end of the light guide 20 is connected to the light emitting part 12 of the excitation light source 10, and the other end is connected to the output part 21. As the light guide 20, for example, SI type 114 (μm: core diameter) / 125 (μm: cladding diameter) made of quartz was used.
The tip of the light guide 20 was equipped with a ferrule made of SUS.
In addition, an ITO film having a film thickness of 3000 mm was disposed on the entire light emitting surface of the light guide 30 which is the end face of the ferrule. Since it is difficult to form an ITO film directly on the end surfaces of the ferrule and the light guide, an ITO film is formed on the cover glass having a film thickness of 150 μm by sputtering and disposed on the light emitting surface of the light guide 30. .

A wavelength conversion member 30 that is substantially made only of a fluorescent material is attached to the light emitting surface side of the ITO film, which is the output unit 21.
As a fluorescent material, 2 g of Ca ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu that emits blue light and 2 g of a mixed solution of ethylcellulose and terpineol (weight ratio = 12: 88) are mixed, and the mixture is heated at 80 ° C. for 30 minutes at 200 ° C. The phosphor was baked for 10 minutes at 500 ° C. for 1 hour. The film thickness of the wavelength conversion member 30 is about 500 μm, for example.
In the excitation light source 10, a lens 13 for condensing the excitation light 1 from the laser diode is disposed in front of the semiconductor light emitting element 11.

In this light-emitting device, the excitation light source was driven with various outputs, and the relative intensity of light with respect to the light output was measured.
The result is shown by the solid line in FIG.
For comparison, the same light emitting device as that described above was prepared except that the ITO film was not disposed, and it was driven with various outputs as described above. The result is shown by the broken line in FIG.

According to FIG. 5, it was confirmed that the relative intensity of the light with respect to the light output shows a good linearity by the arrangement of the conductive translucent film.
Further, for both light emitting devices, when the excitation light source was continuously oscillated at 100 mW, it was confirmed that the temperature of the wavelength conversion member was suppressed by the arrangement of the conductive translucent film. Moreover, it was confirmed that the long-life light-emitting device can be obtained by suppressing the deterioration of the wavelength conversion member by preventing the phosphor material from generating heat in the wavelength conversion member.
In addition, in order to investigate the influence of the cover glass on the end face of the ferrule, except that the ITO film and the cover glass are not arranged on the end face of the ferrule, the same light emitting device as in the above-described embodiment is prepared and the same as described above. Its characteristics were measured.
The relative intensity with respect to the light output was almost the same as that of the light emitting device for comparison described above, in which only the cover glass was disposed.

Example 2
The light emitting device of this example is substantially the same as that of Example 1 except that LAG, BAM, YAG, SCA, SCESN, SESN, CESN, and CaAlSiN ₃ : Eu are used as fluorescent materials.
When these light emitting devices are evaluated in the same manner, the results are almost the same with respect to the relative intensity of light and the life of the light output.

Example 3
In the light emitting device of this example, 10 g of Ca ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu that emits blue light as a fluorescent material, 100 g of isopropyl alcohol, 20 g of alumina sol, and 10 g of acetone are mixed, and a voltage of 50 V is applied. Then, it is the light-emitting device similar to Example 1 except having dried and electrodeposited the fluorescent substance.
When these light emitting devices are evaluated in the same manner, the results are almost the same with respect to the relative intensity of light and the life of the light output.

  The light-emitting device of the present invention can be used for lighting fixtures, on-vehicle lighting, displays, indicators, and the like. Endoscopes for imaging the inside of living bodies, fiberscopes that can illuminate narrow gaps and dark spaces, etc., various industrial, industrial, and household devices that require illumination without current leakage or heat generation Etc. can be used.

It is a schematic block diagram for demonstrating the structure of the light-emitting device of this invention. It is a schematic block diagram for demonstrating the structure of the light guide front-end | tip part in the light-emitting device of this invention. It is a schematic block diagram for demonstrating the structure of the wavelength conversion member in the light-emitting device of this invention. It is a schematic block diagram for demonstrating the combination structure of the unit in the light-emitting device of this invention. It is a graph which shows the relationship between the relative intensity | strength and light output in the light-emitting device of an Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Excitation light 2 Light 10 Excitation light source 11 Semiconductor light emitting element 12 Injecting part 13 Lens 20, 120 Light guide 20a, 120a Core 20b, 120b Cladding 21 Output part 30 Wavelength conversion member 31a, 31b Fluorescent substance 32 Conductive transparent film 100 Light emission apparatus

Claims (7)

An excitation light source that emits excitation light;
A wavelength conversion member that absorbs at least part of the excitation light emitted from the excitation light source and converts the wavelength to emit light in a predetermined wavelength range;
The excitation light source is provided at one end, the wavelength conversion member is provided at the other end, and the refractive index of the central part (core) of the cross section is made higher than that of the peripheral part (clad), and the wavelength of the excitation light emitted from the excitation light source is converted. A light guide led out to the member;
A light-emitting device comprising a conductive translucent film that contacts the wavelength conversion member.   The light-emitting device according to claim 1, wherein a conductive translucent film is interposed between the light guide and the wavelength conversion member.   The light emitting device according to claim 1, wherein the wavelength conversion member is substantially made of only a fluorescent material.   The light emitting device according to any one of claims 1 to 3, wherein the fluorescent material has good temperature characteristics. The fluorescent material includes at least one selected from the group consisting of LAG, BAM, BAM: Mn, YAG, CCA, SCA, SCESN, SESN, CESN, and CaAlSiN ₃ : Eu. The light emitting device according to 1.   Furthermore, a lens is provided between the excitation light source and the light guide, and excitation light emitted from the excitation light source through the lens is introduced into the light guide. Light emitting device. The light emitting device according to any one of claims 1 to 6, wherein the light derived outside has an average color rendering index (Ra) of 80 or more.

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