CN101630710A - 发光二极管 - Google Patents
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Abstract
一种发光二极管,包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的一封装体,该封装体包括一底面,该封装体的横截面面积自该底面向上减少,该封装体自底面向上分为若干封装层,该若干封装层的折射率自底面向上减少。与现有技术相比,本发明的封装体的折射率渐变,折射率差较少,降低封装体的全反射,使得从封装体射出的光线均匀分布。
Description
技术领域
本发明涉及一种发光二极管,特别是涉及一种发光二极管的封装改良结构。
背景技术
发光二极管(Light Emitting Diode,LED)具有环保、亮度高、省电、寿命长等诸多特点,将渐渐成为主要照明光源。然,LED发出的光线于发光二极管的封装体与外界空气的界面容易发生全反射,使得发光二极管出光不均匀。
发明内容
鉴于此,有必要提供一种出光均匀的发光二极管。
一种发光二极管,包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的一封装体,该封装体包括一底面,该封装体的横截面面积自该底面向上减少,该封装体自底面向上分为若干封装层,该若干封装层的折射率自底面向上减少。
一种发光二极管,包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的一封装体,该封装体自靠近发光二极管晶粒向远离发光二极管晶粒的方向渐缩延伸且划分成多个封装层,该多个封装层的折射率自靠近发光二极管晶粒向远离发光二极管晶粒的方向减少,每一封装层包括一侧面,每一封装层的侧面与外界直接接触。
与现有技术相比,本发明的封装体的折射率自下而上渐变,折射率差较少,降低封装体的全反射,并增加光线从封装体的侧面出光比例,使得从封装体射出的光线均匀分布。
附图说明
图1为本发明的发光二极管的一较佳实施例的立体示意图。
图2为图1中沿II-II的剖面示意图。
图3为本发明的发光二极管的又一较佳实施例的剖面示意图。
图4为本发明的发光二极管的另一较佳实施例的剖面示意图。
图5为本发明的发光二极管的再一较佳实施例的剖面示意图。
具体实施方式
如图1及图2所示,发光二极管包括一基板1、一发光二极管晶粒2及一封装体3。基板1呈圆形板状,包括上表面11及下表面12,上表面11与下表面12相对设置,基板1的开设有第一导电柱131及第二导电柱132,第一导电柱131及第二导电柱132分别贯通基板1的上表面11及下表面12。基板1的上表面11设有第一内电极111及第二内电极112,基板1的下表面12设有第一外电极121及第二外电极122,第一内电极111及第一外电极121分别位于第一导电柱131的上下两端周围,第一导电柱131将第一外电极121与第一内电极111电连接,第二内电极112及第二外电极122分别位于第二导电柱132的上下两端周围,第二导电柱132将第二外电极122与第二内电极112电连接。
发光二极管晶粒2固设于基板1的上表面11且位于基板1的中心,发光二极管晶粒2包括第一电极21及第二电极22,第一电极21与基板1的第一内电极111电连接,第二电极22与基板1的第二内电极112电连接。
封装体3由透光材料制成,如环氧树脂、硅胶、压克力等。该封装体3包覆于发光二极管晶粒2的外围。该封装体3整体呈正圆台状,包括一底面31、一顶面32及一侧面33,顶面32与底面31相对设置,侧面33连接于顶面32与底面31之间,封装体3的横截面面积自底面31向上减少,侧面33由底面31的外缘向上且向内倾斜渐缩延伸而成,即该封装体3自靠近发光二极管晶粒2向远离发光二极管晶粒2的方向渐缩延伸。封装体3的底面31平贴于基板1的上表面11,封装体3的顶面32设置若干微结构,使得顶面32凹凸不平,进而使得顶面32出光均匀。该微结构为密集排布的凸起321,凸起321由封装体3的顶面32向外突出而成。该封装体3自底面31向上即自靠近发光二极管晶粒2向远离发光二极管晶粒2的方向依次分为第一封装层34、第二封装层35及第三封装层36,第一封装层34平贴于基板1的上表面11上,第二封装层35平贴于第一封装层34上,第三封装层36平贴于第二封装层35上,相邻封装层的侧面上下相连,所有封装层34、35、36的侧面共同构成封装体3的侧面33,封装层34、35、36的侧面与外界直接接触,第一封装层34的折射率大于第二封装层35的折射率,第二封装层35的折射率大于第三封装层36的折射率,即各封装层34、35、36的折射率自底面31向上即自靠近发光二极管晶粒2向远离发光二极管晶粒2的方向依次减少。可通过向每一封装层34、35、36参杂不同浓度的高折射率纳米粒子以改变各封装层34、35、36的折射率,纳米粒子可为氧化钛、氧化钽及氧化硅等。亦可通过向封装层34、35、36参杂不同浓度的分子团以改变各封装层34、35、36的折射率,分子团可为酚类等。
一方面,封装体3的各封装层34、35、36的折射率自底面31向上依次减少,则相邻封装层的折射率差值较少,减少相邻封装层的界面出现全反射的比例;另一方面,第三封装层36的折射率较少,则第三封装层36与外界空气之间折射率差值较少,减少第三封装层36与外界空气的界面出现全反射的概率。此外,光线自封装体3的侧面33射出封装体3时,各封装层34、35、36的入射角必须小于全反射角,否则会发生全反射,而封装体3的侧面33自底面31的外缘向上且向内倾斜渐缩,这可减少入射角,进而减少全反射,使得更多光线从封装体3的侧面33射出,增加侧面33的出光面积及出光效率。
图3示出本发明的又一较佳实施例,与上一实施例不同之处在于,在上述设置凸起321的位置上,封装体3的顶面32设置若干凹陷322,凹陷322由封装体3的顶面32向内凹入而成,凹陷322亦使得顶面32凹凸不平,进而使得顶面32出光均匀。
图4示出本发明的另一较佳实施例,与第一实施例不同之处在于,封装体4整体不呈圆台状,而封装体4的各封装层44、45、46分别呈圆台状,各封装层44、45、46分别包括一侧面443、453、463,每一侧面443、453、463分别与封装体4的底面41构成一倾斜角,该倾斜角为锐角,封装层44、45、46的倾斜角自该封装体4的底面41向上减少,相邻封装层的侧面上下相连,所有封装层44、45、46的侧面443、453、463共同构成封装体4的侧面,封装层44、45、46的侧面443、453、463与外界直接接触。各封装层44、45、46的倾斜角自封装体4的底面41向上依次逐层减少,即第一封装层44的倾斜角大于第二封装层45的倾斜角,第二封装层45的倾斜角大于第三封装层46的倾斜角。光线自各封装层44、45、46的侧面443、453、463射出封装体4时,各封装层44、45、46的入射角必须小于全反射角,否则发生全反射,而通过改变各封装层44、45、46的倾角,这可改变光路以减少入射角,进而减少全反射,使得更多光线从各封装层44、45、46的侧面443、453、463射出。由于封装层的折射率自封装体4的底面41向上逐层减少,则各封装层44、45、46的侧面与外界空气界面的全反射角自底面41向上逐层增加,故各封装层44、45、46的倾角无须相同,各封装层44、45、46的倾角自底面41向上逐层减少亦可减少全反射。
图5示出本发明的再一较佳实施例,与第一实施例不同之处在于,封装体5整体呈倒碗状,封装体5的侧面55整体呈外凸的曲面状,即侧面55由底面54外缘向上并向内渐缩延伸且外弯而成,封装体5自下而上包括封装层51、52、53,相邻封装层的侧面平滑过渡相连,所有封装层51、52、53的侧面共同构成封装体5的侧面,封装体5的侧面整体呈外凸的曲面状,封装层51、52、53的侧面与外界直接接触。
另,本领域技术人员还可于本发明精神内做其它变化,如封装体3整体呈棱台状等,只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (9)
1.一种发光二极管,包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的一封装体,其特征在于,该封装体包括一底面,该封装体的横截面面积自该底面向上减少,该封装体自底面向上分为若干封装层,该若干封装层的折射率自底面向上减少。
2.根据权利要求1所述的发光二极管,其特征在于,每一封装层包括一侧面,相邻封装层的侧面上下相连,所有封装层的侧面共同构成封装体的侧面。
3.根据权利要求2所述的发光二极管,其特征在于,每一封装层的侧面与该封装体的底面构成一倾斜角,该倾斜角为锐角,该若干封装层的倾斜角自该封装体的底面向上减少。
4.根据权利要求2所述的发光二极管,其特征在于,该封装体呈圆台或棱台状。
5.根据权利要求2所述的发光二极管,其特征在于,该封装体呈倒碗状,相邻封装层的侧面平滑过渡相连,封装体的侧面整体呈外凸的曲面状。
6.根据权利要求2所述的发光二极管,其特征在于,该封装体还包括一顶面,该顶面设置若干凹陷或凸起,使得该顶面凹凸不平。
7.一种发光二极管,包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的一封装体,其特征在于,该封装体自靠近发光二极管晶粒向远离发光二极管晶粒的方向渐缩延伸且划分成多个封装层,该多个封装层的折射率自靠近发光二极管晶粒向远离发光二极管晶粒的方向减少,每一封装层包括一侧面,每一封装层的侧面与外界直接接触。
8.根据权利要求7所述的发光二极管,其特征在于,所述封装层的数量为三个,自靠近发光二极管晶粒向远离发光二极管晶粒的方向依次为第一封装层、第二封装层及第三封装层,第一封装层的折射率大于第二封装层的折射率,第二封装层的折射率大于第三封装层的折射率。
9.根据权利要求9所述的发光二极管,其特征在于,所述第三封装层的顶面形成有密集排布的凹陷或凸起。
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CN200810302796A CN101630710A (zh) | 2008-07-18 | 2008-07-18 | 发光二极管 |
US12/465,587 US20100012960A1 (en) | 2008-07-18 | 2009-05-13 | Light emitting diode |
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Cited By (4)
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CN107658376A (zh) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技(宿迁)有限公司 | 一种贴片式led封装颗粒 |
CN112531126A (zh) * | 2020-04-28 | 2021-03-19 | 友达光电股份有限公司 | 发光装置 |
CN113838991A (zh) * | 2020-06-08 | 2021-12-24 | 成都辰显光电有限公司 | 显示面板和显示装置 |
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US8748910B2 (en) * | 2009-12-18 | 2014-06-10 | Marvell World Trade Ltd. | Systems and methods for integrating LED displays and LED display controllers |
CN102237466B (zh) * | 2010-04-28 | 2013-11-06 | 展晶科技(深圳)有限公司 | 发光组件封装结构及其制程 |
WO2013112435A1 (en) * | 2012-01-24 | 2013-08-01 | Cooledge Lighting Inc. | Light - emitting devices having discrete phosphor chips and fabrication methods |
FR3001026A1 (fr) * | 2013-01-14 | 2014-07-18 | Waitrony Optoelectronics Ltd | Appareil a del a diffusion d'intensite lumineuse |
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JP4979299B2 (ja) * | 2006-08-03 | 2012-07-18 | 豊田合成株式会社 | 光学装置及びその製造方法 |
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- 2008-07-18 CN CN200810302796A patent/CN101630710A/zh active Pending
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Cited By (7)
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CN102420284B (zh) * | 2011-11-02 | 2014-02-12 | 佛山市国星光电股份有限公司 | 自聚焦透镜及led封装结构 |
CN107658376A (zh) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技(宿迁)有限公司 | 一种贴片式led封装颗粒 |
CN112531126A (zh) * | 2020-04-28 | 2021-03-19 | 友达光电股份有限公司 | 发光装置 |
CN112531126B (zh) * | 2020-04-28 | 2023-10-31 | 友达光电股份有限公司 | 发光装置 |
CN113838991A (zh) * | 2020-06-08 | 2021-12-24 | 成都辰显光电有限公司 | 显示面板和显示装置 |
CN113838991B (zh) * | 2020-06-08 | 2024-02-23 | 成都辰显光电有限公司 | 显示面板和显示装置 |
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