CN101615622B - Storage structure of stacked crossed array and method for preparing same - Google Patents
Storage structure of stacked crossed array and method for preparing same Download PDFInfo
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- CN101615622B CN101615622B CN200910041379XA CN200910041379A CN101615622B CN 101615622 B CN101615622 B CN 101615622B CN 200910041379X A CN200910041379X A CN 200910041379XA CN 200910041379 A CN200910041379 A CN 200910041379A CN 101615622 B CN101615622 B CN 101615622B
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- shaped electric
- strip shaped
- electric poles
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Abstract
The invention discloses a storage structure of a stacked crossed array, comprises a substrate; wherein, the substrate is plated with a first strip-shaped electrode; a material film having the resistor-switching effect is formed on the substrate which is not plated with the first strip-shaped electrode and the first strip-shaped electrode; a second strip-shaped electrode intercepting the first strip-shaped electrode is arranged on the film; and the film comprises a first part arranged on the substrate and a second part arranged on the first strip-shaped electrode. The invention can prevent the film having the resistor-switching effect from being etched and simplify the preparation process of the storage structure.
Description
Technical field
The invention belongs to technical field of memory, relate in particular to storage organization of a kind of stacked crossed array and preparation method thereof.
Background technology
At present, be subjected to extensive concern based on the resistance nonvolatile memory, the capable of stacking crossed array is the core of nonvolatile semiconductor memory member.Because the resistance switch effect has the local characteristic, storage only occurs in two electrode crossing projection section, needs insulation to isolate between the memory cell.At present, in the preparation of memory crossover array, but there is limitation in lithographic technique to nanometer etching technology by widespread usage, and the not all material for preparing memory that can be used as all is easy to etching and forms memory cell, brings difficulty for the preparation of memory device.In addition, the device that utilizes the preparation of local characteristic is also seldom arranged.
Summary of the invention
Shortcoming at prior art, the objective of the invention is to utilize the local characteristic of resistance switch effect and substrate to provide storage organization of a kind of stacked crossed array and preparation method thereof, thereby avoid etching film with resistance switch effect to the influence of epitaxial film crystalline state.
For achieving the above object, technical scheme of the present invention is: a kind of storage organization of stacked crossed array, comprise substrate, be coated with first strip shaped electric poles on this substrate, on the substrate that is not coated with first strip shaped electric poles and first strip shaped electric poles, form material film with resistance switch effect, this film is provided with second strip shaped electric poles that intersects with first strip shaped electric poles, and this film comprises and is arranged on the first on the substrate and is arranged on second portion on first strip shaped electric poles.
The orientation of this first strip shaped electric poles and second strip shaped electric poles is perpendicular.
This first strip shaped electric poles has many, and is arranged in parallel, and this second strip shaped electric poles also has many, and is arranged in parallel.
First in this film is a monocrystal thin films, and second portion is a polycrystal film.
This substrate is SrTiO
3Substrate, this film are TiO
2Film.
This first, second strip shaped electric poles is the Pt electrode.
In addition, the present invention also provides a kind of preparation method of storage organization of stacked crossed array, and it may further comprise the steps:
A, provide a substrate, and on this substrate, plate first strip shaped electric poles;
B, the layer of material film of on the substrate that is not coated with first strip shaped electric poles and first strip shaped electric poles, growing;
C, plate second strip shaped electric poles that intersects with first strip shaped electric poles on film, this film comprises and is grown in the first on the substrate and is grown in second portion on first strip shaped electric poles.
Among the step a, utilize the molecular beam epitaxy layer of material film of on the substrate that is not coated with first strip shaped electric poles and first strip shaped electric poles, growing.
First in this film is a monocrystal thin films, and second portion is a polycrystal film.
This substrate is SrTiO
3Substrate, this film are TiO
2Film, this first, second strip shaped electric poles is the Pt electrode.
The present invention compared with prior art has following advantage and beneficial effect:
The present invention adopts the molecular beam epitaxy material film that extension has the resistance switch effect on the substrate of plating first strip shaped electric poles, at last second strip shaped electric poles that the plating and first strip shaped electric poles intersect on film by the suitable substrate of selection.Because the resistance switch effect has the local characteristic, the polycrystal film that is clipped between two electrodes can form good memory cell, and directly extension forms on substrate is the monocrystal thin films with resistance switch effect material, can play good insulating effect to memory cell, thereby avoided having simplified the preparation process of memory device to having the etching of resistance switch effect material layer.
Description of drawings
Fig. 1 is the schematic diagram of the storage organization of stacked crossed array of the present invention;
Fig. 2 is the end view of Fig. 1;
Fig. 3 is two electrodes and the structural representation that is sandwiched in film between two electrodes;
Fig. 4 is the structural representation of memory cell of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail.
As shown in Figures 1 and 2, a kind of storage organization of stacked crossed array, comprise substrate 1, be coated with first strip shaped electric poles 2 on this substrate 1, on the substrate 1 that is not coated with first strip shaped electric poles 2 and first strip shaped electric poles 2, form material film with resistance switch effect, this film is provided with second strip shaped electric poles 5 that intersects with first strip shaped electric poles 2, and this film comprises the first 3 that is arranged on the substrate 1 and is arranged on second portion 4 on first strip shaped electric poles 2.
As shown in Figure 4, the resistance switch effect occurs in two intersects between first, second strip shaped electric poles 2,5, and promptly the logic state of memory cell can not change because of the change of logic states of memory unit on every side, has embodied the local characteristic of resistance switch.
The orientation of this first strip shaped electric poles 2 and second strip shaped electric poles 5 is perpendicular.
As shown in Figure 3, this first strip shaped electric poles 2 has many, and is arranged in parallel, and this second strip shaped electric poles 5 also has many, and is arranged in parallel, and forms the memory cell of a plurality of crossed arrays.
First 3 in this film is a monocrystal thin films, and second portion 4 is a polycrystal film.
This substrate 1 is SrTiO
3Substrate, this film are TiO
2Film, this first, second strip shaped electric poles 2,5 is the Pt electrode.
In addition, the present invention also provides a kind of preparation method of storage organization of stacked crossed array, and it may further comprise the steps:
A, provide a substrate 1, and on this substrate 1, plate first strip shaped electric poles 2;
B, the layer of material film of on the substrate 1 that is not coated with first strip shaped electric poles 2 and first strip shaped electric poles 2, growing;
C, plate second strip shaped electric poles 5 that intersects with first strip shaped electric poles 2 on film, this film comprises and is grown in the first on the substrate and is grown in second portion on first strip shaped electric poles.
Among the step a, utilize the molecular beam epitaxy layer of material film of on the substrate 1 that is not coated with first strip shaped electric poles 2 and first strip shaped electric poles 2, growing.
In the molecular beam epitaxy, when the matching degree of substrate and epitaxial film is fine, can on substrate, extension obtain the good monocrystal thin films of degree of crystallinity; And when the mismatch degree of substrate and epitaxial film is very big, then on substrate, can form the different polycrystal film of crystallization direction.First 3 in this film is a monocrystal thin films, and second portion 4 is a polycrystal film.
This substrate 1 is SrTiO
3Substrate, this film are TiO
2Film, this first, second strip shaped electric poles 2,5 is the Pt electrode.
The present invention is by molecular beam epitaxy TiO
2Claim to form different shape film, polycrystalline TiO in difference at the end
2Be clipped between two Pt electrodes, form good Pt/TiO
2/ Pt memory cell, and directly at SrTiO
3The monocrystalline TiO of last formation
2Can play the insulating effect between good memory cell, thereby avoid TiO
2Etching, realize with the straightforward procedure preparation based on Pt/TiO
2The nonvolatile semiconductor memory member of/Pt crossed array.
Claims (7)
1. the storage organization of a stacked crossed array, comprise substrate, it is characterized in that: be coated with first strip shaped electric poles on this substrate, on the substrate that is not coated with first strip shaped electric poles and first strip shaped electric poles, form material film with resistance switch effect, this film is provided with second strip shaped electric poles that intersects with first strip shaped electric poles, and this film comprises and is arranged on the first on the substrate and is arranged on second portion on first strip shaped electric poles; This first strip shaped electric poles has many, and is arranged in parallel, and this second strip shaped electric poles also has many, and is arranged in parallel; First in the film is monocrystalline TiO
2Film, second portion are polycrystalline TiO
2Film.
2. the storage organization of stacked crossed array according to claim 1, it is characterized in that: the orientation of this first strip shaped electric poles and second strip shaped electric poles is perpendicular.
3. the storage organization of stacked crossed array according to claim 2, it is characterized in that: this substrate is SrTiO
3Substrate.
4. the storage organization of stacked crossed array according to claim 3, it is characterized in that: this first, second strip shaped electric poles is the Pt electrode.
5. the preparation method of the storage organization of a stacked crossed array is characterized in that may further comprise the steps:
A, provide a substrate, and on this substrate, plate first strip shaped electric poles;
B, the layer of material film of on the substrate that is not coated with first strip shaped electric poles and first strip shaped electric poles, growing;
C, on film, plate second strip shaped electric poles that intersects with first strip shaped electric poles; This first strip shaped electric poles has many, and is arranged in parallel, and this second strip shaped electric poles also has many, and is arranged in parallel; This film comprises and is arranged on the first on the substrate and is arranged on second portion on first strip shaped electric poles; First in the film is monocrystalline TiO
2Film, second portion are polycrystalline TiO
2Film.
6. preparation method according to claim 5 is characterized in that: among the step a, utilize the molecular beam epitaxy TiO that grows on the substrate that is not coated with first strip shaped electric poles and first strip shaped electric poles
2Film.
7. preparation method according to claim 6 is characterized in that: this substrate is SrTiO
3Substrate, this first, second strip shaped electric poles is the Pt electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910041379XA CN101615622B (en) | 2009-07-24 | 2009-07-24 | Storage structure of stacked crossed array and method for preparing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910041379XA CN101615622B (en) | 2009-07-24 | 2009-07-24 | Storage structure of stacked crossed array and method for preparing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101615622A CN101615622A (en) | 2009-12-30 |
| CN101615622B true CN101615622B (en) | 2011-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910041379XA Expired - Fee Related CN101615622B (en) | 2009-07-24 | 2009-07-24 | Storage structure of stacked crossed array and method for preparing same |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106920878A (en) * | 2015-12-25 | 2017-07-04 | 北京有色金属研究总院 | A kind of light is electrically integrated multidigit resistance-variable storing device and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7344913B1 (en) * | 2005-04-06 | 2008-03-18 | Spansion Llc | Spin on memory cell active layer doped with metal ions |
| CN101212019A (en) * | 2006-12-26 | 2008-07-02 | 北京大学 | Resistance random access memory unit and method for producing the same |
| CN101339973A (en) * | 2008-08-07 | 2009-01-07 | 中山大学 | Reverse bias voltage induced double stable state nonvolatile semiconductor memory |
| CN101409327A (en) * | 2007-07-20 | 2009-04-15 | 旺宏电子股份有限公司 | Resistive memory structure with buffer layer |
-
2009
- 2009-07-24 CN CN200910041379XA patent/CN101615622B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7344913B1 (en) * | 2005-04-06 | 2008-03-18 | Spansion Llc | Spin on memory cell active layer doped with metal ions |
| CN101212019A (en) * | 2006-12-26 | 2008-07-02 | 北京大学 | Resistance random access memory unit and method for producing the same |
| CN101409327A (en) * | 2007-07-20 | 2009-04-15 | 旺宏电子股份有限公司 | Resistive memory structure with buffer layer |
| CN101339973A (en) * | 2008-08-07 | 2009-01-07 | 中山大学 | Reverse bias voltage induced double stable state nonvolatile semiconductor memory |
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| CN101615622A (en) | 2009-12-30 |
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