CN101590474A - Injection apparatus on the purging system - Google Patents
Injection apparatus on the purging system Download PDFInfo
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- CN101590474A CN101590474A CNA2008100383889A CN200810038388A CN101590474A CN 101590474 A CN101590474 A CN 101590474A CN A2008100383889 A CNA2008100383889 A CN A2008100383889A CN 200810038388 A CN200810038388 A CN 200810038388A CN 101590474 A CN101590474 A CN 101590474A
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- playpipe
- injection apparatus
- liquid line
- purging system
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Abstract
The invention discloses the injection apparatus on a kind of purging system.This injection apparatus comprises first playpipe and second playpipe, is respectively equipped with several nozzles on described first, second playpipe, with respectively at the front and back jet cleaning liquid of wafer; Described injection apparatus also comprises the 3rd playpipe, and described the 3rd playpipe is provided with the nozzle to crystal round fringes jet cleaning liquid.Compared with prior art, injection apparatus of the present invention not only is provided with the playpipe that sprays the wafer frontside and the back side, also be provided with the playpipe that sprays crystal round fringes, removed the residual impurity of crystal round fringes effectively, reduced and the phenomenon that film comes off in successive process, occurs.
Description
Technical field
The present invention relates to the manufacturing process for cleaning behind the cmp (CMP) of semiconductor applications, specifically, relate to the injection apparatus on the wafer purging system behind a kind of CMP of being used for.
Background technology
Need to clean just behind the wafer process CMP processing procedure and can enter next processing procedure.The manufacturing process for cleaning of wafer is to carry out on the purging system of CMP board.Purging system comprises rinse bath and is installed on interior two roller brush of rinse bath and injection apparatus.Injection apparatus of the prior art comprises two playpipes that are positioned at two roller brush tops, is used for spraying cleaning fluid to the wafer frontside and the back side.Fig. 1 and Fig. 2 are respectively the schematic top plan view and the cross-sectional schematic of existing injection apparatus 1.This injection apparatus 1 comprises that playpipe 13,14 lays respectively at the both sides of wafer 100. Liquid line 11,12 is respectively playpipe 13,14 cleaning fluid is provided.Be respectively equipped with three nozzles 130,140 on the playpipe 13,14, spray cleaning fluid with front and back at wafer 1.During cleaning, roller brush is cooperating the front and back of the cleaning fluid cleaning wafer that sprays.
Though injection apparatus 1 can can't be sprayed onto the edge of wafer effectively to the front and back jet cleaning liquid of wafer, roller brush also is not easy to clean to the edge of wafer.Like this, in the processing procedure of follow-up deposition film, because the marginal existence residual impurity of wafer, the film that causes being deposited on crystal round fringes comes off easily, and part is fallen on the device of crystal circle center's part, finally influences its electric property, has reduced the yield of wafer.
Summary of the invention
In view of this, the technical problem that the present invention solves is to provide the injection apparatus on a kind of purging system, and it can effectively improve the clean level of cleaning wafer.
For solving the problems of the technologies described above, the invention provides the injection apparatus on a kind of new purging system.This injection apparatus comprises first playpipe and second playpipe, is respectively equipped with several nozzles on described first, second playpipe, with respectively at the front and back jet cleaning liquid of wafer; Described injection apparatus also comprises the 3rd playpipe, and described the 3rd playpipe is provided with the nozzle to crystal round fringes jet cleaning liquid.
Further, the opening direction of the 3rd playpipe top nozzle is vertical with the opening direction of the second playpipe top nozzle with first playpipe.
Further, described injection apparatus comprises first liquid line, second liquid line and the 3rd liquid line that respectively described first playpipe, second playpipe and the 3rd playpipe is provided cleaning fluid; Wherein the 3rd liquid line is connected on second liquid line; Perhaps the 3rd liquid line is independent conveyance conduit, the cleaning fluid that such the 3rd liquid line is carried be can with the chemical liquids of hangover on wafer surface generation chemical reaction, the cleaning fluid that first liquid line, second liquid line are carried is a deionized water.
Further, described the 3rd playpipe is provided with the control valve of control cleaning fluid flow.
Compared with prior art, injection apparatus of the present invention not only is provided with the playpipe that sprays the wafer frontside and the back side, also be provided with the playpipe that sprays crystal round fringes, removed the residual impurity of crystal round fringes effectively, reduced and the phenomenon that film comes off in successive process, occurs.
Description of drawings
Fig. 1 is the schematic top plan view of existing injection apparatus.
Fig. 2 is the cross-sectional schematic of Fig. 1 along the A-A direction.
Fig. 3 is the schematic top plan view of the injection apparatus of first embodiment of the invention description.
Fig. 4 is the cross-sectional schematic of Fig. 3 along the B-B direction.
Fig. 5 is the schematic top plan view of the injection apparatus of second embodiment of the invention description.
The specific embodiment
Be described in detail below in conjunction with the preferred embodiment of accompanying drawing, in the hope of further understanding technical scheme, purpose and the beneficial effect etc. of invention the injection apparatus on the purging system provided by the invention.
See also Fig. 3 and in conjunction with Fig. 4, the injection apparatus 2 of first embodiment comprises first playpipe 23 and second playpipe 24 that is positioned at both sides, wafer 100 top.Be respectively equipped with three nozzles 230,240 that even interval is provided with on first, second playpipe 23,24, be used for the front and back of wafer 100 is sprayed cleaning fluid.Injection apparatus 2 is respectively first playpipe 23 by first liquid line 21 and second liquid line 22 and second playpipe 24 provides cleaning fluid, and described cleaning fluid can be a deionized water, also can be the chemical liquids with the reaction of the residual impurity of crystal column surface.
Described injection apparatus 2 also is provided with the 3rd playpipe 26 that sprays cleaning fluid to the wafer frontside edge, the cleaning fluid that it uses in second liquid line 22 by the 3rd liquid line 25.Described the 3rd playpipe 26 is equipped with the flow that flow control valve 262 is controlled cleaning fluid with the end that the 3rd liquid line 25 is connected, and is excessive to avoid flow, influences the spray effect of 24 pairs of wafer rears of second playpipe.Described flow control valve 262 can be realized by an air valve.The other end of the 3rd playpipe 26 is equipped with a nozzle by joint 261, and it is a fluoroplast (PFA) pipe 260.The opening direction of described PFA pipe 260 is vertical with the opening direction of said nozzle 230,240.PFA pipe 260 sprays cleaning fluid to the marginal portion in wafer 100 fronts, by the flushing of cleaning fluid and the rotation of wafer 100 own the residual impurity of wafer frontside edge is removed.It is pointed out that crystal round fringes that the present invention mentions is meant the annular region between limit to the outermost limit that nozzle 230,240 is sprayed onto of maximum gauge of wafer.
Fig. 5 is the schematic top plan view of second embodiment of the invention injection apparatus 3.This injection apparatus 3 is basic identical with injection apparatus 2, and different is that the 3rd liquid line 35 is independent conveyance conduits, is not connected with second liquid line 32.Adopt injection apparatus 3 can realize using different cleaning fluids to clean.That is to say, first liquid line 31 and second liquid line 32 can be carried deionized water, and the 3rd liquid line is carried chemical liquids, the chemical liquids that such the 3rd playpipe 36 sprays and the residual impurity of crystal round fringes react, reacted solution throws away by the rotation of wafer 100, thereby wafer frontside edge (the especially edge in wafer 100 fronts) is cleaned up, compare the direct deionized water rinsing of using, further improve the clean level of wafer.
From Fig. 3 and Fig. 5 as can be known, the 3rd spray line of describing among the embodiment provided by the invention is to aim at the wafer frontside edge, be understandable that, it is to aim at the wafer rear edge that the present invention can also be provided with a spray line again, perhaps the nozzle with spray line strengthens, make it not only can be sprayed onto the wafer frontside edge, also can be sprayed onto the wafer rear edge, also belong to content of the present invention.
Compare prior art, the present invention cleans the edge of wafer by increasing a playpipe, has improved the clean level of wafer, has avoided causing because of impurity is residual the phenomenon that film comes off in the successive process effectively.
Foregoing description only is the description to several preferred embodiments of the present invention; it is not any qualification to the scope of the invention; any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure; for example; the 3rd playpipe among two kinds of embodiment and PFA pipe can also adopt can arbitrarily be adjusted the angle flexible pipe and realize, all belongs to the protection domain of claims.
Claims (10)
1. the injection apparatus on the purging system, described injection apparatus comprises first playpipe and second playpipe, be respectively equipped with several nozzles on described first, second playpipe, with respectively at the front and back jet cleaning liquid of wafer, it is characterized in that, described injection apparatus also comprises the 3rd playpipe, and described the 3rd playpipe is provided with the nozzle to crystal round fringes jet cleaning liquid.
2. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, the opening direction of the 3rd playpipe top nozzle is vertical with the opening direction of the second playpipe top nozzle with first playpipe.
3. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, described injection apparatus comprises first liquid line, second liquid line and the 3rd liquid line that respectively described first playpipe, second playpipe and the 3rd playpipe is provided cleaning fluid; Wherein the 3rd liquid line is connected on second liquid line.
4. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, described injection apparatus comprises first liquid line, second liquid line and the 3rd liquid line that respectively described first playpipe, second playpipe and the 3rd playpipe is provided cleaning fluid; Wherein the cleaning fluid carried of the 3rd liquid line be can with the chemical liquids of hangover on wafer surface generation chemical reaction, the cleaning fluid that first liquid line, second liquid line are carried is a deionized water.
5. as the injection apparatus on claim 3 or the 4 described purging systems, it is characterized in that described the 3rd playpipe is provided with the control valve of control cleaning fluid flow.
6. the injection apparatus on the purging system as claimed in claim 5 is characterized in that described control valve is an air valve.
7. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, described the 3rd playpipe is made by the flexible pipe of adjustable nozzles angle.
8. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, is respectively equipped with three nozzles on first playpipe and second playpipe, and the 3rd playpipe is provided with a nozzle.
9. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, the nozzle opening of described the 3rd playpipe is aimed at the front edge of wafer.
10. the injection apparatus on the purging system as claimed in claim 1 is characterized in that, what the nozzle of described the 3rd playpipe adopted is the fluoroplast pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100383889A CN101590474A (en) | 2008-05-30 | 2008-05-30 | Injection apparatus on the purging system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100383889A CN101590474A (en) | 2008-05-30 | 2008-05-30 | Injection apparatus on the purging system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101590474A true CN101590474A (en) | 2009-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008100383889A Pending CN101590474A (en) | 2008-05-30 | 2008-05-30 | Injection apparatus on the purging system |
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| CN (1) | CN101590474A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129959A (en) * | 2011-01-05 | 2011-07-20 | 清华大学 | Wafer cleaning device and method for cleaning wafer by using same |
| CN103915314A (en) * | 2012-12-31 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | Wafer-edge cleaning method |
| CN104190665A (en) * | 2014-08-11 | 2014-12-10 | 厦门润晶光电有限公司 | Cleaning device and method used before yellow light coating of large-sized and medium-sized sapphire wafer patterning process |
| CN104338706A (en) * | 2013-08-02 | 2015-02-11 | 盛美半导体设备（上海）有限公司 | Washing device |
| CN105470177A (en) * | 2016-01-05 | 2016-04-06 | 天津华海清科机电科技有限公司 | Wafer cleaning and drying apparatus |
| CN107993919A (en) * | 2017-11-21 | 2018-05-04 | 长江存储科技有限责任公司 | Chemical liquids spray tube and cleaning device for wafer cleaning |
| CN109211723A (en) * | 2017-07-08 | 2019-01-15 | 北京工标传感技术有限公司 | A kind of direct insertion tuning fork densitometer |
| CN110327121A (en) * | 2019-08-14 | 2019-10-15 | 苏州肯美特设备集成有限公司 | A kind of surgical instrument automatic cleaning equipment |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN111389772A (en) * | 2020-03-24 | 2020-07-10 | 长江存储科技有限责任公司 | Cleaning device and cleaning method |
| CN114101156A (en) * | 2020-08-25 | 2022-03-01 | 中国科学院微电子研究所 | Wafer fork cleaning method and device |
| CN114425742A (en) * | 2021-12-29 | 2022-05-03 | 华海清科股份有限公司 | Distributed cleaning device |
-
2008
- 2008-05-30 CN CNA2008100383889A patent/CN101590474A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129959A (en) * | 2011-01-05 | 2011-07-20 | 清华大学 | Wafer cleaning device and method for cleaning wafer by using same |
| CN103915314B (en) * | 2012-12-31 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | Crystal round fringes cleaning method |
| CN103915314A (en) * | 2012-12-31 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | Wafer-edge cleaning method |
| CN104338706A (en) * | 2013-08-02 | 2015-02-11 | 盛美半导体设备（上海）有限公司 | Washing device |
| CN104190665B (en) * | 2014-08-11 | 2017-02-15 | 厦门润晶光电集团有限公司 | Cleaning device and method used before yellow light coating of large-sized and medium-sized sapphire wafer patterning process |
| CN104190665A (en) * | 2014-08-11 | 2014-12-10 | 厦门润晶光电有限公司 | Cleaning device and method used before yellow light coating of large-sized and medium-sized sapphire wafer patterning process |
| CN105470177A (en) * | 2016-01-05 | 2016-04-06 | 天津华海清科机电科技有限公司 | Wafer cleaning and drying apparatus |
| CN105470177B (en) * | 2016-01-05 | 2018-09-07 | 清华大学 | Wafer cleaning drying device |
| CN109211723A (en) * | 2017-07-08 | 2019-01-15 | 北京工标传感技术有限公司 | A kind of direct insertion tuning fork densitometer |
| CN107993919A (en) * | 2017-11-21 | 2018-05-04 | 长江存储科技有限责任公司 | Chemical liquids spray tube and cleaning device for wafer cleaning |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN110327121A (en) * | 2019-08-14 | 2019-10-15 | 苏州肯美特设备集成有限公司 | A kind of surgical instrument automatic cleaning equipment |
| CN111389772A (en) * | 2020-03-24 | 2020-07-10 | 长江存储科技有限责任公司 | Cleaning device and cleaning method |
| CN114101156A (en) * | 2020-08-25 | 2022-03-01 | 中国科学院微电子研究所 | Wafer fork cleaning method and device |
| CN114425742A (en) * | 2021-12-29 | 2022-05-03 | 华海清科股份有限公司 | Distributed cleaning device |
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Open date: 20091202 |