CN101584079B - Irreversible circuit element and its center conductor assembly - Google Patents
Irreversible circuit element and its center conductor assembly Download PDFInfo
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- CN101584079B CN101584079B CN2008800027327A CN200880002732A CN101584079B CN 101584079 B CN101584079 B CN 101584079B CN 2008800027327 A CN2008800027327 A CN 2008800027327A CN 200880002732 A CN200880002732 A CN 200880002732A CN 101584079 B CN101584079 B CN 101584079B
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- center conductor
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- duplexer
- conductor assembly
- interarea
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
- H01P1/365—Resonance absorption isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
Abstract
A central conductor assembly for a non-reciprocal circuit device, at least a first central conductor constituting a first inductance element and a second central conductor constituting a second inductance element being integrally formed in a laminate comprising pluralities of magnetic layers, the first central conductor being formed by series-connecting first and second lines formed on a first main surface of the laminate to third lines formed in the laminate through via-holes, and the second central conductor being formed on the first main surface of the laminate such that it extends between the first and second lines and crosses the third lines via a magnetic layer.
Description
Technical field
The present invention relates to the middle Irreversible circuit element that is called as isolator (isolator) and the center conductor assemblies thereof that use such as microwave telecommunication devices such as mobile phone.
Background technology
Irreversible circuit element be a kind of in the magnetics such as garnet (ferrite) a plurality of center conductors of cross-over configuration, apply D.C. magnetic field from magnet magnetropism body, in magnetic, produce rotation sympathetic response magnetic field, thereby do not make the signal attenuation ground that is input to a center conductor with its circuit element to other center conductor transmission.
Figure 12 represents the disclosed equivalent electric circuit that is called as the Irreversible circuit element of 2-port isolator JP 2004-15430 number, and Figure 13 represents the formation of this Irreversible circuit element.This 2-port isolator has: the first input/output port P1; The second input/output port P2; Be connected between two input/output port P1, the P2, consist of the first inductance component L in and the second matching capacitor Ci of the first antiresonant circuit; The resistive element R that is connected in parallel with the first antiresonant circuit; And be connected electrically between the second input/output port P2 and the ground, consist of the second inductance component L out and the second matching capacitor Cf of the second antiresonant circuit.As the feature of 2-port isolator, setting insulation (decay in the other direction) in the first antiresonant circuit is maximum frequency, and setting insertion loss in the second antiresonant circuit is minimum frequency.
As shown in figure 13, the first inductance component L in and the second inductance component L out are made of the first center conductor Lin and the second center conductor Lout of band shape, interarea or inside at the ferrite sheet 5 that is applied D.C. magnetic field by permanent magnet 30 intersect with state of insulation, consist of center conductor assembly 4.The first matching capacitor Ci and the second matching capacitor Cf are made of the electrode pattern in the ceramic multi-layer baseplate 10.Interarea at ceramic multi-layer baseplate 10 is provided with electrode pad 15 and connects pad 17,18.Electrode pad 15 is by crossing pore electrod and side electrode, is connected with the terminal electrode P2 of the second center conductor Lout of the side that is formed on ceramic multi-layer baseplate 10.Connect pad 17 by crossing pore electrod and side electrode, be connected with the terminal electrode P1 of the first center conductor Lin of the side that is formed on ceramic multi-layer baseplate 10.Connect pad 18 by crossing pore electrod and side electrode, GND is connected with grounding electrode.Permanent magnet 30, center conductor assembly 4 and ceramic multi-layer baseplate 10 are housed in the upper-lower casing 22,25 that is made of magnetic metal.
Be accompanied by the miniaturization and of mobile phone and the increase of the components number that multifunction is brought, the miniaturization of the isolator that uses in the strong request mobile phone.Extensively adopting overall dimension at present is the isolator of 3.2mm * 3.2mm * 1.2mm or 3.2mm * 2.5mm * 1.2mm, but is also further required small-sized isolator.Be accompanied by such miniaturization, the ceramic multi-layer baseplate of formation 2-port isolator, center conductor assembly etc. also must miniaturizations.
In the past, center conductor and the integrated center conductor assembly of ferrite had various forms.For example known have an assembly that Copper Foil is wound up into ferrite sheet; Or disclosed such as Unexamined Patent 7-212107 number, after printing has formed the pattern that becomes center conductor to ferrite sheet with silver paste, stacked many ferrite sheets, the assembly (Figure 14) of the duplexer structure that the formation one is burnt till etc.But, be accompanied by the little degree to 1.5mm * 1.5mm of overall dimension of center conductor assembly, Copper Foil is as thin as about 0.15mm, easily fracture, be difficult to when guaranteeing insulating properties, with the intersecting angle of stipulating center conductor be wound up on the ferrite sheet accurately.On the other hand, because the monolithic construction that the center conductor assembly of cascade type has ferrite and center conductor one, so, no problem in the situation of using Copper Foil, but owing to be difficult to obtain large quality factor q value, resistance is also large, so the electrical characteristics such as insertion loss are relatively poor.
Summary of the invention
Therefore, the object of the invention is to, the center conductor assembly of monolithic construction that magnetic and center conductor one is stacked is provided; And possess this center conductor assembly, and has the Irreversible circuit element of outstanding insertion loss.
Center conductor assembly of the present invention is used in the Irreversible circuit element, this Irreversible circuit element possesses: consist of the first inductance element and first capacity cell of the first antiresonant circuit between the first input/output port and the second input/output port and consist of the second inductance element and second capacity cell of the second antiresonant circuit between the second input/output port and the ground, it is characterized in that
Possess described first and second inductance element,
Consist of described the first inductance element at least one first center conductor, and consist of the second center conductor of described the second inductance element, be integrally formed at the duplexer that is consisted of by a plurality of magnetic layers,
Described the first center conductor will be formed on first and second circuit of the first interarea of described duplexer and the tertiary circuit that is formed on described duplexer inside and be connected in series and consist of by via hole,
Described the second center conductor according between described first and second circuit with described tertiary circuit across the mode that the magnetic layer intersects, be formed on the first interarea of described duplexer.
Preferred the first inductance element consists of by a plurality of the first center conductors that are connected in parallel.Consist of according to this, not only the resistance of the first inductance element reduces, and the adjustment of inductance becomes easy.
Dispose to preferred parallel a plurality of first～tertiary circuits, the second center conductor and tertiary circuit are across magnetic layer quadrature.Preferably be formed with the first terminal electrode that is connected with the first center conductor, and the second terminal electrode of being connected with the second center conductor at the second interarea of duplexer.Preferred being connected in parallel of a plurality of the first circuits and being connected in parallel of a plurality of the second circuits are undertaken by the electrode that is arranged in the duplexer respectively.
Irreversible circuit element of the present invention possesses: consist of the first inductance element and first capacity cell of the first antiresonant circuit between the first input/output port and the second input/output port and consist of the second inductance element and second capacity cell of the second antiresonant circuit between the second input/output port and the ground, it is characterized in that possessing:
The center conductor assembly, it possesses described first and second inductance element, consist of at least one first center conductor of described the first inductance element, and the second center conductor of described the second inductance element of formation, be integrally formed at the duplexer that is consisted of by a plurality of magnetic layers, described the first center conductor is by first and second circuit on first interarea that will be formed on described duplexer by via hole, be connected in series with the tertiary circuit that is formed on described duplexer inside and form, described the second center conductor, according between described first and second circuit with described tertiary circuit across the mode that the magnetic layer intersects, be formed on the first interarea of described duplexer;
Apply the permanent magnet of D.C. magnetic field to described center conductor assembly; With
Be built-in with the multilager base plate of described first and second capacity cell;
At the interarea of described multilager base plate described center conductor assembly is installed.
The invention effect
If the first interarea with a part and second center conductor of the first center conductor is arranged at duplexer then can obtain by the inside that they is set to duplexer so that the large inductance element of quality factor (Q value).And, by reducing the resistance of the first center conductor that consists of the first inductance element, can improve the insertion loss characteristic.The Irreversible circuit element of the present invention that possesses the center conductor assembly of above-mentioned formation, for small-sized and have outstanding insertion loss characteristic, its frequency band is very wide.Therefore, be fit to be applied to mobile phone.
Description of drawings
Fig. 1 is the exploded perspective view of the Irreversible circuit element that relates to of expression one embodiment of the present of invention.
Fig. 2 is the figure of the equivalent electric circuit of the Irreversible circuit element that relates to of expression one embodiment of the present of invention.
Fig. 3 is the stereogram of the center conductor assembly that relates to of expression one embodiment of the present of invention.
Fig. 4 is the A-A profile of Fig. 3.
Fig. 5 is the exploded perspective view of the center conductor assembly that relates to of expression one embodiment of the present of invention.
Fig. 6 is the profile of the center conductor assembly that relates to of expression other embodiment of the present invention.
Fig. 7 is the exploded perspective view of the multilager base plate (the stacked body of capacitor) that uses in the Irreversible circuit element that relates to of expression one embodiment of the present of invention.
Fig. 8 is the stereogram that represents center conductor assembly in the past.
Fig. 9 is the B-B profile of Fig. 8.
Figure 10 is the exploded perspective view that represents center conductor assembly in the past.
Figure 11 (a) is the chart of the insertion loss characteristic of expression embodiment 1 and comparative example 1,2 Irreversible circuit element.
Figure 11 (b) is the chart of the insulation characterisitic of expression embodiment 1 and comparative example 1,2 Irreversible circuit element.
Figure 12 is the figure that represents the equivalent electric circuit of Irreversible circuit element in the past.
Figure 13 is the exploded perspective view that represents Irreversible circuit element in the past.
Figure 14 is the exploded perspective view that represents center conductor assembly in the past.
Embodiment
Fig. 1 represents the structure of the Irreversible circuit element that one embodiment of the present of invention relate to.Irreversible circuit element by the ceramic multi-layer baseplate (the stacked body of capacitor) 5 of center conductor assembly 4, mounting center conductor assembly 4, the resistive element R that is equipped on ceramic multi-layer baseplate 5 and capacity cell Cin, to center conductor assembly 4 apply D.C. magnetic field permanent magnet 3, and the double up and down metal shell 1 of doing yoke, 2 consist of.Fig. 2 represents the equivalent electric circuit of Irreversible circuit element.Except possessing as the capacity cell Cin of impedance matching circuit with for the broadband inductance component L g of signal passband, the circuit of this Irreversible circuit element is identical with previously described 2-port isolator.
Fig. 3 represents the outward appearance of center conductor assembly 4, and Fig. 4 represents the A-A section of center conductor assembly 4, and Fig. 5 represents the internal structure of center conductor assembly 4.Center conductor assembly 4 possesses: consist of first circuit 165a～165c, second circuit 167a～167c and the tertiary circuit 160a～160c of formation the first center conductor of the first inductance component L in and consist of the second center conductor 150 of the second inductance component L out.As shown in Figure 5, on layer S3, first circuit 165a～165c and second circuit 167a～167c are by the both sides of balanced configuration at the second center conductor 150.Be formed on tertiary circuit 160a～160c on layer S2 by the via hole that is arranged at layer S3, be connected with the end of first circuit 165a～165c and the end of second circuit 167a～167c.As a result, tertiary circuit 160a～160c intersects across the second center conductor 150 and magnetic layer.In this example, first～tertiary circuit 165a～165c, 167a～167c and 160a～160c are parallel, and with the second center conductor 150 quadratures, but certainly be not limited to this.
Be formed with public connecting electrode 170 on the layer S1.The other end of first circuit 165a～165c is connected with public terminal electrode 200c by the via hole that is arranged at layer S1～S3 (among the figure with black circle represent), the other end of second circuit 167a～167c is connected by the public connecting electrode 170 of the via hole that is arranged at a layer S2, S3 with layer S1, and then, be connected with terminal electrode 200d by the via hole that is arranged at public connecting electrode 170.The two ends of the second center conductor 150 are connected with terminal electrode 200a, 200b by the via hole that is arranged at layer S1～S3.
In order to form center conductor assembly 4, at first make the raw cook of the magnetic ceramic powders such as magnetic ferrite by the scraper legal system.The composition of magnetic ceramics powder for example is (Y
1.45Bi
0.85Ca
0.7) (Fe
3.95In
0.3A
0.4V
0.35) O
12(atomic ratio).In order to make the raw cook of this composition, for example with ball mill to Y
2O
3, Bi
2O
3, CaCO
3, Fe
2O
3, In
2O
3, Al
2O
3And V
2O
5The initial feed that consists of is carried out wet mixed, after making the slip drying that obtains, carry out pre-burning with 850 ℃, utilize ball mill to carry out case of wet attrition, by polycrystalline magnetic ceramics powder mixing organic bond (for example polyvinyl butyral resin), plasticizer (for example phthalic acid ester) and the organic solvent (ethanol or butanols) of ball mill to obtaining, and after having adjusted viscosity, form tabular by scraping the skill in using a kitchen knife in cookery.The thickness of raw cook for example is 40 μ m and 80 μ m after sintering.On each raw cook, the conductive pastes such as Ag, Cu are printed as predetermined pattern, form the electrode pattern comprise first and second center conductor, and filled conductive cream in the through hole forms via hole.The raw cook that has formed electrode pattern is stacked and it is carried out thermo-compressed, after the size of utilizing cutting machine or steel knife with regulation is provided with slit, its enforcement is burnt till, make the integrated substrate with a plurality of center conductor assemblies.With integrated substrate by slit cut apart, as each center conductor assembly, the exposed division of via hole, the circuit and the terminal electrode that are revealed in the surface are carried out plating.Wherein, cutting apart of integrated substrate can be carried out before sintering, also can form slit behind sintering, and then can not carry out plating.
The center conductor assembly that so obtains for example has the overall dimension of 1.6mm * 1.3mm * 0.2mm, the width of each circuit is that 0.1mm, thickness are 20 μ m, the distance between centers of the first circuit～tertiary circuit (spacing) is 0.3mm, tertiary circuit 160 and the second center conductor 150 be spaced apart 40 μ m.Via hole has the circular cross-section that diameter is 0.12mm, but also can be other cross sectional shape.
If thicken tertiary circuit 160a～160c in order to reduce resistance, then because the expansion of the interval of raw cook S2 and S3, so, the splitting (leafing) after stacked offsetting or the crimping might occur.In order to prevent this situation, as long as to the zone except tertiary circuit 160a～160c among the raw cook S2, printing gets final product (layer S2 ' shown in Figure 6) with the magnetic ceramics powder paste of tertiary circuit 160a～160c same thickness.The magnetic ceramics powder paste can be modulated by cooperate the adhesive such as ethyl cellulose and solvent in the magnetic ceramics powder identical with raw cook.In addition, if replace the magnetic ceramics powder paste, and use pyrex or can low sintering dielectric cream, then since layer S2 ' as magnetic gap performance function, so, can improve the quality factor q of inductance element.
Fig. 7 represents that the layer of ceramic multi-layer baseplate 5 consists of.Ceramic multi-layer baseplate 5 also is made of the duplexer that one sinters into, and section has the capacitance electrode 65a～65d that forms capacity cell Ci, Cf, the line electrode 80 that reaches formation inductance component L g within it.On duplexer, be formed with the electrode 60a～60c that is connected with the terminal electrode 200a～200d of center conductor assembly 4, be provided with overleaf mounting terminal IN, the OUT that forms with the resin-case 7 that has metal-made lower house 2 in one, input/output port 70a (In), 70b (Out) and the earth terminal GND that GND is connected.In this example, capacity cell Cin is equipped on ceramic multi-layer baseplate 5, but also can be formed by the capacitance electrode in the ceramic multi-layer baseplate 5.
In resin-case 7, dispose successively ceramic multi-layer baseplate shown in Figure 75 and center conductor assembly 4 shown in Figure 5, and be electrically connected, and then dispose as shown in Figure 1 permanent magnet 3 and metal upper shell 1, consisted of for example Irreversible circuit element of 2.8mm * 2.5mm * 1.1mm.
Comparative example 1,2
Fig. 8～Figure 10 represents the center conductor assembly of comparative example 1.This center conductor assembly and center conductor assembly difference of the present invention are, the first center conductor are configured in the inside of duplexer with circuit 160a～160c.The center conductor assembly of comparative example 2 is opposite with the center conductor assembly of comparative example 1, has the first center conductor on the surface of duplexer with circuit 160a～160c, has the second center conductor 150 in the inside of duplexer.Utilize the center conductor assembly of comparative example 1 and 2, with the above-mentioned Irreversible circuit element of similarly having made.
Figure 11 (a) and Figure 11 (b) represent respectively the insertion loss of embodiment 1 and comparative example 1,2 Irreversible circuit element and the measurement result of insulation.The Irreversible circuit element of embodiment 1 has the outstanding insertion loss for 0.4dB, and the Irreversible circuit element of comparative example 1 has the insertion loss of about 0.8dB, and the Irreversible circuit element of comparative example 2 has the insertion loss greater than comparative example 1 about 0.1dB.For insulation, embodiment 1 and comparative example 1,2 Irreversible circuit element are roughly the same.According to above-mentioned situation as can be known, the configuration of first and second center conductor in the center conductor assembly is very large to the insertion loss properties influence; And if form first and second circuit of the first center conductor at the first interarea of duplexer, and the inside at duplexer forms tertiary circuit, the second center conductor is formed on the first interarea according to the mode of intersecting across the magnetic layer with tertiary circuit between first and second circuit, then can obtain having outstanding insertion loss characteristic and the Irreversible circuit element of insulation characterisitic.
Claims (5)
1. center conductor assembly, be used in the Irreversible circuit element, this Irreversible circuit element possesses: consist of the first inductance element and first capacity cell of the first antiresonant circuit between the first input/output port and the second input/output port and consist of the second inductance element and second capacity cell of the second antiresonant circuit between the second input/output port and the ground, it is characterized in that
Described center conductor assembly possesses: the duplexer that is made of a plurality of magnetic layers; Consist of at least one first center conductor of described the first inductance element; And the second center conductor of described the second inductance element of formation,
Described the first center conductor will be formed on first and second circuit on the first interarea of described duplexer and be formed on described duplexer inside by via hole tertiary circuit is connected in series and consists of, and described the first center conductor is integrally formed at the first interarea and the inside of described duplexer
Described the second center conductor according between described first and second circuit with described tertiary circuit across the mode that the magnetic layer intersects, be integrally formed in the first interarea of described duplexer.
2. center conductor assembly according to claim 1 is characterized in that,
Described the first inductance element consists of by a plurality of described the first center conductors that are connected in parallel.
3. center conductor assembly according to claim 1 and 2 is characterized in that,
Dispose abreast a plurality of described first～tertiary circuits, described the second center conductor and described tertiary circuit are across magnetic layer quadrature.
4. center conductor assembly according to claim 1 and 2 is characterized in that,
Be formed with the first terminal electrode that is connected with described the first center conductor, and the second terminal electrode of being connected with described the second center conductor at the second interarea of described duplexer.
5. Irreversible circuit element, possess: consist of the first inductance element and first capacity cell of the first antiresonant circuit between the first input/output port and the second input/output port and consist of the second inductance element and second capacity cell of the second antiresonant circuit between the second input/output port and the ground, it is characterized in that described Irreversible circuit element possesses:
The center conductor assembly, it possesses the duplexer that is made of a plurality of magnetic layers, consist of at least one first center conductor of described the first inductance element, and the second center conductor of described the second inductance element of formation, described the first center conductor is by first and second circuit on first interarea that will be formed on described duplexer by via hole, be connected in series with the tertiary circuit that is formed on described duplexer inside and form, and described the first center conductor is integrally formed at the first interarea and the inside of described duplexer, described the second center conductor according between described first and second circuit with described tertiary circuit across the mode that the magnetic layer intersects, be integrally formed in the first interarea of described duplexer;
Apply the permanent magnet of D.C. magnetic field to described center conductor assembly; With
Be built-in with the multilager base plate of described first and second capacity cell; At the interarea of described multilager base plate described center conductor assembly is installed.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP019614/2007 | 2007-01-30 | ||
| JP2007019614 | 2007-01-30 | ||
| PCT/JP2008/051320 WO2008093681A1 (en) | 2007-01-30 | 2008-01-29 | Irreversible circuit element and its center conductor assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101584079A CN101584079A (en) | 2009-11-18 |
| CN101584079B true CN101584079B (en) | 2013-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800027327A Active CN101584079B (en) | 2007-01-30 | 2008-01-29 | Irreversible circuit element and its center conductor assembly |
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| Country | Link |
|---|---|
| US (1) | US8564380B2 (en) |
| EP (1) | EP2117071B1 (en) |
| JP (1) | JP5412833B2 (en) |
| KR (1) | KR101421454B1 (en) |
| CN (1) | CN101584079B (en) |
| WO (1) | WO2008093681A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5234069B2 (en) * | 2010-09-03 | 2013-07-10 | 株式会社村田製作所 | Magnetic resonance isolator |
| CN103563074B (en) * | 2011-04-04 | 2018-09-14 | 陶瓷技术有限责任公司 | Ceramic printed-circuit board with Al cooling bodies |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0618636B1 (en) * | 1993-03-31 | 2000-06-07 | TDK Corporation | Multi-layer microwave circulator |
| CN1719659A (en) * | 2004-07-07 | 2006-01-11 | 日立金属株式会社 | Non-reciprocal circuit device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2684550B2 (en) * | 1986-05-02 | 1997-12-03 | ティーディーケイ株式会社 | Non-reciprocal circuit device |
| US5774024A (en) * | 1993-04-02 | 1998-06-30 | Murata Manufacturing Co, Ltd. | Microwave non-reciprocal circuit element |
| JPH07212107A (en) | 1994-01-11 | 1995-08-11 | Tokin Corp | Irreversible circuit element |
| JP2000049508A (en) * | 1998-07-24 | 2000-02-18 | Tdk Corp | Nonreversible circuit element nonreversible circuit device and its manufacture |
| JP3528771B2 (en) * | 2000-08-25 | 2004-05-24 | 株式会社村田製作所 | Manufacturing method of center electrode assembly |
| JP3655583B2 (en) * | 2001-12-17 | 2005-06-02 | アルプス電気株式会社 | Non-reciprocal circuit element |
| JP3852373B2 (en) | 2002-06-06 | 2006-11-29 | 株式会社村田製作所 | Two-port nonreciprocal circuit device and communication device |
| JP4729836B2 (en) | 2003-03-28 | 2011-07-20 | Ｔｄｋ株式会社 | Magnetic storage cell, magnetic memory device, and method of manufacturing magnetic memory device |
| JP3858853B2 (en) * | 2003-06-24 | 2006-12-20 | 株式会社村田製作所 | 2-port isolator and communication device |
| JP3979402B2 (en) * | 2003-09-04 | 2007-09-19 | 株式会社村田製作所 | Two-port isolator, characteristic adjustment method thereof, and communication device |
| JP2006050543A (en) | 2004-07-07 | 2006-02-16 | Hitachi Metals Ltd | Non-reciprocal circuit device |
-
2008
- 2008-01-29 US US12/524,825 patent/US8564380B2/en active Active
- 2008-01-29 JP JP2008556114A patent/JP5412833B2/en active Active
- 2008-01-29 EP EP08704102A patent/EP2117071B1/en active Active
- 2008-01-29 CN CN2008800027327A patent/CN101584079B/en active Active
- 2008-01-29 KR KR1020097013417A patent/KR101421454B1/en active IP Right Grant
- 2008-01-29 WO PCT/JP2008/051320 patent/WO2008093681A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0618636B1 (en) * | 1993-03-31 | 2000-06-07 | TDK Corporation | Multi-layer microwave circulator |
| CN1719659A (en) * | 2004-07-07 | 2006-01-11 | 日立金属株式会社 | Non-reciprocal circuit device |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2005-20195A 2005.01.20 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2117071A4 (en) | 2011-03-16 |
| JP5412833B2 (en) | 2014-02-12 |
| US8564380B2 (en) | 2013-10-22 |
| EP2117071B1 (en) | 2012-08-22 |
| EP2117071A1 (en) | 2009-11-11 |
| JPWO2008093681A1 (en) | 2010-05-20 |
| US20100060374A1 (en) | 2010-03-11 |
| CN101584079A (en) | 2009-11-18 |
| KR20090114359A (en) | 2009-11-03 |
| KR101421454B1 (en) | 2014-07-22 |
| WO2008093681A1 (en) | 2008-08-07 |
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