CN1719659A

CN1719659A - Non-reciprocal circuit device

Info

Publication number: CN1719659A
Application number: CN 200510083208
Authority: CN
Inventors: 岸本靖; 寺胁武文; 野津稔
Original assignee: Hitachi Metals Ltd
Current assignee: Proterial Ltd
Priority date: 2004-07-07
Filing date: 2005-07-07
Publication date: 2006-01-11
Anticipated expiration: 2025-07-07
Also published as: CN100568617C

Abstract

The present invention provides a non-reciprocal circuit device comprising a first inductance element disposed between a first input/output port and a second input/output port, a second inductance element disposed between the second input/output port and a ground, a first capacitance element constituting a first parallel resonance circuit with the first inductance element, a second capacitance element constituting a second parallel resonance circuit with the second inductance element, a resistance element parallel-connected to the first parallel resonance circuit, and an impedance-adjusting means disposed between the first input/output port and the first inductance element.

Description

Non-reciprocal circuit element

Technical field

The present invention relates to high-frequency signal is had the non-reciprocal circuit element of irreversible transmission characteristic, particularly non-reciprocal circuit element that use, that be commonly referred to as isolator in the mobile communication system of portable phone etc.

Background technology

Utilizing by the mobile communication machine of hundreds of MHz to ten number GHz frequency bands, be in portable phone or its base station etc., using the non-reciprocal circuit element of isolator etc. more.Isolator for example is configured between the power amplifier and antenna in transmission stage of mobile communication machine, prevents the adverse current of unwanted signal to power amplifier, and the impedance of the load-side of firm power amplifier.Therefore, it is good to require isolator to insert loss characteristic, reflection loss characteristic and isolation characteristic.

What Figure 27 represented is existing isolator.This isolator has: as the microwave ferrite 38 of ferrite magnetic body; At an interarea of ferrite 38 is 3

center conductors

31,32,33 that electrically insulated from one another state and being configured to intersects with hexagonal angle; Coupling capacitor C1～the C3 that is connected with an end of each

center conductor

31,32,33; The terminal resistance Rt that is connected with any port (for example P3) of

center conductor

31,32,33.The other end ground connection of each

center conductor

31,32,33.Ferrite 38 is applied D.C. magnetic field Hdc by permanet magnet (not shown) on its direction of principal axis.By this isolator, be transferred into port P2 from the high-frequency signal of port P1 input, the reflected wave that is entered by port P2 is absorbed by terminal resistance Rt and is not sent port P1 to.Thus, prevent in the anti-ingoing power amplifier of unwanted reflected wave of following impedance change etc. of antenna.

Recently, the isolator (spy opens 2004-88743 number) that has proposed to constitute, insert loss characteristic and reflection loss characteristic good by the equivalent circuit different with above-mentioned isolator.This isolator has two center conductors, is called as 2 terminals to isolator.Figure 24 represents the equivalent circuit of its basic comprising.This 2 terminal has isolator: be arranged on the 1st central electrode L1 (the 1st inductance element) between the 1st input/output port P1 and the 2nd input/output port P2; Intersecting under the electric insulating state and be arranged on the 2nd central electrode L2 (the 2nd inductance element) between the 2nd input/output port P2 and the ground with the 1st central electrode L1; Be arranged between the 1st input/output port P1 and the 2nd input/output port P2, constitute the 1st capacity cell C1 of the 1st antiresonant circuit with the 1st central electrode L1; Resistive element R; Be arranged between the 2nd input/output port P2 and the ground, constitute the 2nd capacity cell C2 of the 2nd antiresonant circuit with the 2nd central electrode L2.

The 1st antiresonant circuit is set and is isolated (decay in the other direction) maximum frequency number, and the 2nd antiresonant circuit is set at the frequency number of inserting the loss minimum.By the 1st input/output port P1 when the 2nd input/output port P2 transmitting high-frequency signal, because the 1st antiresonant circuit between the 1st input/output port P1 and the 2nd input/output port P2 does not resonate and the resonance of the 2nd antiresonant circuit, therefore transmit loss little (it is good to insert loss characteristic).From the electric current of the 2nd input/output port P2, absorbed by the resistive element R between the 1st input/output port P1 and the 2nd input/output port P2 to the 1st input/output port P1 adverse current.

Figure 25 represents the concrete example of 2 terminals to the structure of isolator.2 terminals are to isolator 1, and magnetic circuit is such according to constituting, and possesses: the box body (upside box body 4, downside box body 8) that is made of the ferromagnetism metal of soft iron etc.; Permanet magnet 9; The center conductor assembly 30 that constitutes by microwave ferrite 20 and

center conductor

21,22; Carry the multilayer board 50 of center conductor assembly 30.

Accommodating the upside box body 4 of permanet magnet 9, is to have the roughly box-formed shape that goes up facial 4a and four side surface part 4b, and downside box body 8 is the コ word shapes that possess bottom surface sections 8a and left and right sides facial 8b, 8b.Be electroplate with the conductive metal of Ag, Cu etc. on each

box body

4,8.

Center conductor assembly 30 possess discoideus microwave ferrite 20, in the above be situated between by insulating barrier (not shown) intersect vertically the configuration the 1st and the

2nd center conductor

21,22, the 1 and the

2nd center conductors

21,22 in the cross part electromagnetic coupled.The the 1st and the

2nd center conductor

21,22 is made of two circuits respectively, and both ends 21a, the 21b of each circuit, 22a, 22b are with the state of being separated from each other extension below microwave ferrite 20.

The formation of Figure 26 presentation layer laminated substrate 50.Multilayer board 50 is by the thin plate 46a that is provided with the electrode 51～54 that is connected with the end of

center conductor

21,22 overleaf; Be provided with the dielectric sheet 41 of electrode for capacitors 55,56 and resistance 27 overleaf; Be provided with the dielectric sheet 42 of electrode for capacitors 57 overleaf; Be provided with the dielectric sheet 43 of ground electrode 58 overleaf; Be provided with the formations such as dielectric sheet 45 of input outer electrode 14, output outer electrode 15 and grounded outer electrode 16.

Center conductor connection electrode 51 becomes the 1st input/output port P1 of above-mentioned equivalent circuit, and center conductor connection electrode 52 becomes the 3rd port P3, and center

conductor connection electrode

53,54 becomes the 2nd input/output port P2.An end 21a of the 1st center conductor 21 is situated between and is connected with input outer electrode 14 by the 1st input/output port P1 (center conductor connection electrode 51).Another end 21b of the 1st center conductor 21 is situated between and is connected with output outer electrode 15 by the 2nd input/output port P2 (center conductor connection electrode 54).An end 22a of the 2nd center conductor 22 is situated between and is connected with output outer electrode 15 by the 2nd input/output port P2 (center conductor connection electrode 53).Another end 22b of the 2nd center conductor 22 is situated between and is connected with grounded outer electrode 16 by the 3rd port P3 (center conductor connection electrode 52).The 1st capacity cell C1 (25) is connected between the 1st input/output port P1 and the 2nd input/output port P2, constitutes the 1st antiresonant circuit with the 1st center conductor L1 (21).The 2nd capacity cell C2 (26) is connected between the 2nd input/output port P2 and the 3rd port P3, constitutes the 2nd antiresonant circuit with the 2nd center conductor L2 (22).

If obtain the non-reciprocal circuit element of good electric performance, then must consider by the inductance that circuit generated that connects reactance component, by the various factorss such as capacitor parasitics that interference generated between electrode pattern.

Above-mentioned 2 terminals to isolator in, unwanted sometimes reactive component can be connected with the 1st and the 2nd antiresonant circuit.If this situation takes place, then 2 terminals are to the input impedance meeting of isolator and desired value deviation to some extent, produce not match with of the impedance of 2 terminals to other circuit that isolator was connected, thereby deterioration insertion loss characteristic and isolation characteristic.

Though considered unwanted reactive component, can determine to constitute the inductance and the electric capacity of the 1st and the 2nd antiresonant circuit, but the width of the circuit by change constituting the 1st and the

2nd center conductor

21,22 and at interval etc. only can not obtain the matching condition with the best of external circuit.This is that the inductance of the 1st and the 2nd inductance component L 1, L2 changes simultaneously because the 1st and the

2nd center conductor

21,22 intercouples, and is difficult to adjust independently the cause of the input impedance of the 1st and the 2nd input/output port P2, P1.Particularly, therefore must be prevented because the deviation of the input impedance of the 1st input/output port P1 can cause inserting the increase of loss.

Summary of the invention

The object of the present invention is to provide a kind of be easy to adjust input impedance, insertion loss characteristic and the good non-reciprocal circuit element of isolation characteristic.

Non-reciprocal circuit element of the present invention is characterized in that, has: be configured in the 1st inductance element between the 1st input/output port and the 2nd input/output port; Be configured in the 2nd inductance element between described the 2nd input/output port and the ground; Constitute the 1st capacity cell of the 1st antiresonant circuit with described the 1st inductance element; Constitute the 2nd capacity cell of the 2nd antiresonant circuit with described the 2nd inductance element; With described the 1st antiresonant circuit parallel resistor element; And be configured in impedance adjusting mechanism between described the 1st input/output port and described the 1st inductance element.

Described impedance adjusting mechanism preferably is made of inductance element and/or capacity cell, perhaps is made of low pass filter or high pass filter.Between described the 2nd antiresonant circuit and ground, preferably connect inductance element.Also have, preferably between described the 2nd antiresonant circuit and ground, with the inductance element capacity cell that is connected in parallel.

Described the 1st inductance element and described the 2nd inductance element are preferably formed by the 1st center conductor and the 2nd center conductor that are configured on the ferrite magnetic body.The preferred the described the 1st or at least a portion of the 2nd capacity cell form by the electrode pattern in the multilayer board.Preferably the element on described multilayer board constitutes by electrode pattern in the described multilayer board or lift-launch for inductance element that described impedance adjusting mechanism is used and/or capacity cell.

Description of drawings

Fig. 1 is the figure of equivalent circuit of the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 2 is the figure of equivalent circuit of the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 3 is the figure of equivalent circuit of all examples of employed impedance adjusting mechanism in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 4 is the figure of equivalent circuit of all examples of employed impedance adjusting mechanism in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 5 is the figure of equivalent circuit of all examples of employed impedance adjusting mechanism in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 6 is the figure of equivalent circuit of the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 7 is the stereogram of outward appearance of the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 8 is the exploded perspective view of structure of the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 9 (a) is the expanded view of an example of the center conductor that uses in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Fig. 9 (b) is the stereogram of the assembled state of the center conductor shown in the presentation graphs 9 (a).

Figure 10 is the exploded perspective view of the structure of an example of the multilayer board that uses in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Figure 11 is the exploded perspective view of the structure of another example of the multilayer board that uses in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Figure 12 is the vertical view of the resin box body that uses in the non-reciprocal circuit element of expression one embodiment of the present of invention.

Figure 13 is the S11 Smith chart of the non-reciprocal circuit element of embodiment 1 and comparative example 1.

Figure 14 is the chart of frequency characteristic of input side reflection loss of the non-reciprocal circuit element of expression embodiment 1 and comparative example 1.

Figure 15 is the chart of frequency characteristic of insertion loss of the non-reciprocal circuit element of expression embodiment 1 and comparative example 1.

Figure 16 is the chart of frequency characteristic of isolation of the non-reciprocal circuit element of expression embodiment 1 and comparative example 1.

Figure 17 is the figure of equivalent circuit of the non-reciprocal circuit element of expression another embodiment of the present invention.

Figure 18 is the expression figure of the equivalent circuit of the non-reciprocal circuit element of an embodiment more of the present invention.

Figure 19 is the exploded perspective view that uses the structure of multilayer board in the non-reciprocal circuit element of expression another embodiment of the present invention.

Figure 20 is the S11 Smith chart when not connecting inductance element in the non-reciprocal circuit element of embodiment 2

Figure 21 is the S11 Smith chart of the non-reciprocal circuit element of embodiment 2

Figure 22 is the equivalent circuit figure of expression according to the non-reciprocal circuit element of another embodiment of the present invention.

Figure 23 is the exploded perspective view of the structure of the multilayer board that uses in the non-reciprocal circuit element of expression another embodiment of the present invention.

Figure 24 is the figure of the equivalent circuit of the existing non-reciprocal circuit element of expression.

Figure 25 is the exploded perspective view of the structure of the existing non-reciprocal circuit element of expression.

Figure 26 is the exploded perspective view of the structure of the multilayer board that uses in the existing non-reciprocal circuit element of expression.

Figure 27 is the figure of another routine equivalent circuit of the existing non-reciprocal circuit element of expression.

Embodiment

Fig. 1 represents the equivalent circuit of the non-reciprocal circuit element of one embodiment of the present of invention.This non-reciprocal circuit element is to possess 2 terminals of the 1st input/output port P1 and the 2nd input/output port P2 to isolator, and it possesses: be connected the 1st inductance component L 1 between port PT and the port PC; Be connected the 2nd inductance component L 2 between port PC and the port PE; Be connected between port PT and the port PC, constitute the 1st capacity cell Ci of the 1st antiresonant circuit with the 1st inductance component L 1; Be connected between port PC and the port PE, constitute the 2nd capacity cell Cf of the 2nd antiresonant circuit with the 2nd inductance component L 2; Be connected the resistive element R between port PT and the port PC; And be connected impedance adjusting mechanism 90 between the 1st input/output port P1 and the port PT.Port PE is connected with ground.Shown in the equivalent circuit of Fig. 2, the 1st inductance component L 1 and the 2nd inductance component L 2 are made of the 1st center conductor 21 and the 2nd center conductor 22 that are configured on the ferrite magnetic body.

All examples of Fig. 3～5 expression impedance adjusting mechanisms 90.Impedance adjusting mechanism 90 is made of the 3rd inductance element and/or the 3rd capacity cell.Represent dielectric resistance or expression capacitive character according to the input impedance of port PT, suitably select impedance adjusting mechanism 90.For example, when 2 terminals of seeing from port 90 are represented under the situation of dielectric resistance to the input impedance of isolator, use input impedance to represent capacitive impedance adjusting mechanism 90, on the contrary, represent under the capacitive situation in input impedance, use input impedance to represent the impedance adjusting mechanism 90 of dielectric resistance, thereby reach the impedance matching of expectation.Inductance element and capacity cell are preferably by easy use, constitute than the chip part that is easier to carry out the constant change.Inductance element also can be made of the distributed constant circuit.

If impedance adjusting mechanism 90 is made of low pass filter, even then do not change the 1st and the 2nd inductance component L 1, L2 and the 1st and the 2nd capacity cell Ci, Cf, also the impedance adjustment can be easily carried out, and 2 higher harmonics from power amplifier, 3 unwanted frequency compositions (higher harmonic signal) such as higher harmonics can be removed.

Described power amplifier, to obtaining impedance matching under the fundamental frequency with the drain electrode of transistorized output as the high frequency power of using, and to higher harmonic component (for example 2 times of ripples) short-circuit impedance of the frequency of even-multiple that first-harmonic is arranged, the power that higher harmonic component is consumed is zero.Thus, power amplifier efficient operation.2 terminals are to the input impedance characteristic (S of isolator ₁₁) under 2 times of ripples, be essentially short circuit, but under such impedance conditions the job insecurity of power amplifier, cause causing vibration.Here, if with impedance adjusting mechanism 90 as the phase circuit utilization, then making power amplifier and 2 terminals by phase theta mobile is non-conjugated coupling to the coupling of isolator, can suppress the vibration of power amplifier.For example, if the inductance element of impedance adjusting mechanism 90 is the distributed constant circuits that are configured between the 1st input/output port P1 and the port PT, then, the input impedance to 2 higher harmonics can be adjusted into the value of expected range by adjusting its line length and shape.

If make phase theta significantly move the distributed constant circuit that then can extend, but work can make electrical characteristic also worsen like this.Therefore, in the time only can not fully adjusting phase theta, preferably as shown in figure 17, between port PE and ground, be connected inductance element 40 by impedance adjusting mechanism 90.Inductance element 40 can be made of chip inductance or distributed constant circuit.By connecting inductance element 40 at port PE, the same in the time of can be with the distributed constant circuit of lengthening impedance adjusting mechanism 90, phase theta is moved clockwise.

With reference to the accompanying drawings various embodiments of the present invention are described in more detail, but the present invention is not limited to these embodiment.

(embodiment 1, comparative example 1)

Fig. 6 is the equivalent circuit of the non-reciprocal circuit element of one embodiment of the present of invention.In the present embodiment, impedance adjusting mechanism 90 constitutes (with reference to Fig. 3 (a)) by the capacity cell Cz that is connected in bypass between the 1st input/output port P1 and the 1st inductance component L 1.Other circuit constitute, since identical with equivalent circuit shown in Figure 1, explanation therefore omitted.

Fig. 7 is the stereogram of outward appearance of the non-reciprocal circuit element of expression one embodiment of the present of invention, and Fig. 8 is its exploded perspective view.Non-reciprocal circuit element 1 possesses: the center conductor assembly 30 that is reached center conductor 20 (having the 1st center conductor 21 and the 2nd center conductor 22 that intersect under electrically insulated from one another state on the microwave ferrite 10) formation that disposes in the mode of surrounding this microwave ferrite 10 by microwave ferrite 10; Have with the 1st center conductor 21 and the 2nd center conductor 22 and constitute the 1st and the 2nd capacity cell Ci of resonant circuit, the multilayer board 50 of Cf; Input terminal 82a that formation is connected with multilayer board 50 and the resin box body 80 of lead-out terminal 83a; Microwave ferrite 10 is supplied with the permanet magnet 40 of D.C. magnetic field; Covering is accommodated in the upper cartridge body 70 of permanet magnet 40, center conductor assembly 30 and multilayer board 50 in the resin box body 80.

In center conductor assembly 30, for example the 1st center conductor 21 and the 2nd center conductor 22 dispose according to the mode of being intersected by insulating barrier (not shown) that is situated between on the surface of the microwave ferrite 10 of rectangular shape.The 1st center conductor 21 and the 2nd center conductor 22 are square crossing (crossing angle are 90 °) in the present embodiment, but crossing angle be beyond 90 ° situations also within the scope of the invention.In general, the 1st center conductor 21 with the 2nd center conductor 22 as long as in 80 °～110 ° angular range, intersect just passable.Owing to also can change the input impedance of non-reciprocal circuit element by crossing angle, so preferably include the impedance adjusting mechanism, also suitably set crossing angle, make the impedance matching condition that reaches best.

Fig. 9 (a) is the plane outspread drawing of center conductor 20, and Fig. 9 (b) is the stereogram that expression is configured in center conductor 20 state on the microwave ferrite 10.Among Fig. 9 (b),, and omitted the microwave ferrite 10 that is included in the 1st center conductor 21 and the 2nd center conductor 22 in addition for the common ground 23 that manifests center conductor 20.

Center conductor 20 has integratedly: common ground 23; Begin the 1st center conductor 21 that extends in right angle orientation from one side 23a of common ground 23; Begin the 2nd center conductor 22 that extends in right angle orientation with another side 23b, form the L shape on the whole from the adjacency of common ground 23.So center conductor 20 can be for example be that the copper coin of 30 μ m forms by stamping-out etc. by thickness.For the loss that the kelvin effect that is reduced in the higher harmonics causes, preferably copper coin being implemented thickness is the silver-plated of 1～4 μ m.

The 1st center conductor 21 is made of 3 parallel conductor portions (circuit) 211～213, and the 2nd center conductor 22 is made of 1 conductor portion (circuit) 221.According to such formation, the inductance of the 1st center conductor 21 is less than the inductance of the 2nd center conductor 22.

Because the 1st center conductor 21 and the 2nd center conductor 22 of center conductor 20 are included microwave ferrite 10, therefore compare and to obtain bigger inductance than the situation of configuration center conductor 20 on an interarea of microwave ferrite 10.This helps the miniaturization of microwave ferrite 10.

Replacement also can be formed by different copper coins by integrated the 1st center conductor 21 and the 2nd center conductor 22 of forming of copper coin.In addition, can also form the 1st center conductor 21 and the 2nd center conductor 22 by print process or etching method by on the two sides of the pliability high temperature insulation thin plate of polyimides etc.In addition, can also on microwave ferrite 10, print the 1st center conductor 21 and the 2nd center conductor 22.This shows, do not limit the form of the 1st center conductor 21 and the 2nd center conductor 22.

Microwave ferrite 10 is not limited to illustrated rectangular shape, also can be circular plate shape.If use the microwave ferrite 10 of rectangular shape, then owing to bigger, therefore can make the 1st and the

2nd center conductor

21,22 that comprises this microwave ferrite 10 elongated compared with microwave ferrite 10 volumes of circular plate shape, increased inductance thus.

Microwave ferrite 10 is so long as the D.C. magnetic field from permanet magnet 40 to be had a magnetic material of function of non-reciprocal circuit element just passable.As preferred magnetic material, can enumerate the ferrite of yttrium iron gamet class garnets such as (YIG) structure, but also can use the Ni based ferrite according to frequency of utilization.Under the situation of YIG, can be with the part of Y with displacements such as Gd, Ca, V, perhaps can be with the part of Fe with displacements such as Al, Ga.

Center conductor assembly 30 is applied the permanet magnet 40 of D.C. magnetic field, use adhesive etc. to be fixed on the internal face of upper cartridge body 70.As permanet magnet 40, from cost and with the viewpoint of the harmony of the temperature characterisitic of microwave ferrite 10, preferred ferrite magnetite [(Sr/Ba) OnFe for example ₂O ₃].By having OnFe by (Sr/Ba) ₂O ₃The ferrite magnetite of represented composition has by (Sr/Ba) ROn (FeM) ₂O ₃The ferrite magnetite of R element and/and M element has been added in [R uses from replaced the part of iron by at least a element of selecting the group that Co, Mn, Ni and Zn formed for a part, the M that replaces Sr and/or Ba with at least a element of the rare earth element that comprises Y] represented forming, have in the pulverizing process after calcining under magnetoplumbite type crystalline texture, the compound state, owing to have higher magnetic flux density, therefore can realize the miniaturization and the slimming of non-reciprocal circuit element.The relict flux density Br of preferred ferrite magnetite is more than the 420mT, and confining force iHc is more than the 300kA/m.

Figure 10 is the exploded perspective view of multilayer board 50.Multilayer board 50 in the present embodiment is made of dielectric sheet S1～S6 of 6 layers.Employed pottery among dielectric sheet S1～S6 is preferably the low-temperature sintered ceramics (LTCC) that can cure simultaneously with the conductor paste (paste) of Ag etc.

From the viewpoint of environment, LTCC does not preferably comprise lead.Such LTCC preferably contains: by the Al (Al of 10～60 quality % ₂O ₃Conversion), the Si (SiO of 25～60 quality % ₂Conversion), the Sr (SrO conversion) of 7.5～50 quality % and the Ti (TiO of 0～20 quality % ₂Conversion) main component that constitutes; Relative principal component 100 quality % are from the Bi (Bi by 0.1～10 quality % ₂O ₃Conversion), the Na (Na of 0.1～5 quality % ₂The O conversion), the K (K of 0.1～5 quality % ₂O converts) and the group of Co (CoO conversions) formation of 0.1～5 quality % at least a accessory ingredient selected; With from by the Cu (CuO conversion) of 0.01～5 quality %, the Mn (MnO of 0.01～5 quality % ₂Convert) and the group that constitutes of the Ag of 0.01～5 quality % in select at least a.

With the mixture of the ceramic powder of above-mentioned composition with 700 ℃～850 ℃ calcinings, be crushed to average grain diameter 0.6～2 μ m, change, make dielectric tellite with scraping blade (doctor blade) method etc. with adhesive and solvent slip (slurry).Each tellite is formed through hole, with the conductivity paste thing pattern that prints electrode, also filled conductive paste in through hole.With a plurality of tellites that formed electrode pattern carry out stacked, cure the multilayer board 50 of being made into one.

The multilayer board 50 that is made of low-temperature sintered ceramics like this, the metal that can use Ag, Cu, Au etc. to have high conductivity is made electrode pattern.Electrode pattern preferably is made of the superficial layer that the lower floor of the plating of Ag, Cu, Ag-Pd etc., intermediate layer that Ni electroplates and Au electroplate.Because it is Au plated solder wettability is good and conductance is high, therefore comparatively effective on the low-lossization of non-reciprocal circuit element.The thickness of electrode pattern is generally 2～20 μ m, is set at more than 2 times of the necessary thickness of kelvin effect.Such multilayer board 50 owing to formed the electrode pattern of low resistance loss on the dielectric with higher Q value, therefore can constitute the little non-reciprocal circuit element of loss.

Multilayer board 50 is the size of the following size of about 4mm * 4mm.Here, female multilayer board that preferred fabrication is made of a plurality of multilayer boards 50 is then by being divided into multilayer board 50 one by one, perhaps by dicer (dicer) or laser cutting along preformed slot segmentation.

The curing of multilayer board 50 preferably cured (restrained burning) by restriction and carried out.The restriction baking process is, by to cure multilayer board 50 under the state that suppresses thin plate holding sheet laminated substrate 50 in the contraction of not curing under the condition (particularly stoving temperature is below 1000 ℃) of multilayer board 50, suppress the contraction of curing of in-plane (X-Y direction), after curing, remove contraction and suppress thin plate by ultrasonic cleansing method, wet type honing (honing) method, alternated blasting (blast) etc.Like this, can obtain curing the little multilayer board of distortion.Shrink to suppress thin plate by alumina powder or, the mixture of oxygen aluminium powder and stabilized zirconia powder constitutes.

As shown in figure 10, dielectric sheet S1～S6 is last with the conductivity paste thing pattern that prints electrode.Specifically, on dielectric sheet S1, form electrode pattern 501～504 respectively, on dielectric sheet S2, form electrode pattern 505,506, on dielectric sheet S3, form electrode pattern 507, on dielectric sheet S4, form electrode pattern 508, on dielectric sheet S5, form electrode pattern 509, on dielectric sheet S6, form electrode pattern 510.

Electrode pattern on dielectric sheet S1～S6 connects by through hole VHg1～VHg6, VHi1～VHi9, the VHo1～VHo9 that has filled conductivity paste thing.Specifically, through hole VHg1～VHg6 is connected electrode pattern 504,505,510 on the ground electrode GND, through hole VHi1～VHi9 is situated between electrode pattern 502 and is connected on the input terminal IN by electrode pattern 508, and through hole VHo1～VHo9 is connected electrode pattern 520,507,509 on the lead-out terminal OUT.Electrode pattern 503,506,507,508,509 constitutes the 1st capacity cell Ci, and electrode pattern 520,505,507 and electrode pattern 509,510 constitute the 2nd capacity cell Cf.

In the present embodiment, the electrode pattern that constitutes the 1st and the 2nd capacity cell Ci, Cf is configured to multilayer, by through hole they is connected in parallel.By such structure, can widen the formation area of the electrode pattern of average each layer.Specifically, can form electrostatic capacitance about 30pF.

On the interarea of multilayer board, manifest a plurality of electrode patterns that are arranged on the dielectric sheet S1.Electrode pattern 503,504, soldering there are the chip capacitor 61 that acts on as impedance adjusting mechanism 90, electrode pattern 502,520, soldering are had chip-resistance 64.To the electrode pattern 501 of circular, soldering has the common portion 23 of center conductor 20.In the present embodiment, electrode pattern 501 is set to circular, is for the formation area of the electrode pattern 502,503,504 around obtaining is bigger, and can obtain and these electrode patterns between the insulation distance maximum.To electrode pattern 503, connect the end 21a of the 1st center conductor 21, connect the end 22a of the 2nd center conductor 22 to electrode pattern 504, by soldering by soldering.

At the back side of multilayer board 50, be equipped with input terminal IN and lead-out terminal OUT in the mode of clamping ground electrode GND.Ground electrode GND is connected on resin box body 80 by embedding the bottom 81b of the framework 81 that (insert) be shaped by soldering etc.Input terminal IN and lead-out terminal OUT are connected in the input terminal bared end 82b and the lead-out terminal bared end 83b of the inboard that is provided in resin box body 80 respectively by soldering.

In the present embodiment, the capacity cell Cin of impedance adjusting mechanism 90 usefulness is mounted in the chip capacitor 61 on the interarea of multilayer board 50.Owing to can select desired chip capacitor, therefore can easily carry out the adjustment of input impedance.As shown in figure 11, the capacity cell Cin of impedance adjusting mechanism 90 also can be formed by the inside of electrode pattern 511 at multilayer board 50.Example shown in Figure 11, capacity cell Cin is formed on dielectric sheet S7, and is formed on the electrode pattern 510 on the dielectric sheet S6 and the ground electrode GND that is formed on the dielectric sheet S7 constitutes capacity cell Cz.Can not need to carry chip capacitor thus.Can also be installed on the multilayer board 50 by capacity cell being formed in the multilayer board 50 and in addition, adjust the electric capacity of impedance adjusting mechanism 90 chip capacitor.

The impedance adjusting mechanism 90 of non-reciprocal circuit element of the present invention can be by inductance element separately or constituting by inductance element and capacity cell.Inductance element can be a chip inductance, also can be formed in the electrode pattern (row pattern) on the dielectric sheet.

When inductance element that forms impedance adjusting mechanism 90 usefulness with electrode pattern and capacity cell, be difficult to repair (trimming) adjustment in addition, if and use chip capacitor or chip inducer, then can trickle adjustment electric capacity and inductance to obtain impedance matching well.

The upper cartridge body 70 of the roughly box shape that engages with the sidewall 81a, the 81c that on resin box body 80, embed the metal framework 81 that is shaped, ferromagnetism body by soft iron etc. forms, performance permanet magnet 40, center conductor assembly 30 and form the function of yoke of the magnetic circuit of embracing layer laminated substrate 50.On upper cartridge body 70, be preferably formed the plating that constitutes by the selected at least a metal of the group that constitutes from Ag, Au, Cu and Al or its alloy.The resistivity of electrodeposited coating is preferably below the 5.5 μ Ω cm, and more preferably below the 3.0 μ cm, highly preferred is below the 1.8 μ Ω cm.Thickness of plating layer is 0.5～25 μ m, more is preferably 0.5～10 μ m, is preferably 1～8 μ m the most.By this structure, can suppress to reduce the wastage with the mutual interference mutually of external circuit.

Figure 12 is the vertical view of expression resin box body 80.The resin box body 80 that embedding is shaped has the thin metal framework 81 about 0.1mm.Metal framework 81 is formed by stamping-out or etching etc. by metal, 81b bottom integrated being formed with, at two

sidewall

81a, 81c, the terminal 81d～81g of its both sides.Framework terminal 81d～81g is the ground terminal.Because the sidewall of

frame side wall

81a, 81c and upper cartridge body 70 is faced mutually, so can supply with the magnetic flux of permanet magnet 40 to center conductor assembly 30 equably.

Also integrated setting has input terminal 82a (the 1st input/output port P1 of IN-equivalent circuit) and lead-out terminal 83a (the 2nd input/output port P2 of OUT-equivalent circuit) on resin box body 80.For with input terminal IN and lead-out terminal OUT electric insulation, the bared end 83b of the bared end 82b of base of frame 81b and input terminal IN and lead-out terminal OUT is isolated about 0.3mm.

Framework 81 is made of for example SPCC about thickness 0.15mm (JIS G3141), implements the Cu plating of thickness 1～3 μ m and the Ag of thickness 2～4 μ m on the surface and electroplates.By this plating, improved high frequency characteristics.

Contain multilayer board 50 in resin box body 80, soldering has the input terminal IN and the lead-out terminal OUT of multilayer board 50 respectively on the bared end 83b of the bared end 82b of the input terminal of resin box body 80 and lead-out terminal.The bottomland GND soldering of multilayer board 50 is on the base of frame 81b of resin box body 80.

Because resin box body shown in Figure 12 has 4 ground terminal 81d～81g (GND), therefore can be accurately and stably obtain earth potential.In addition, owing to comprise that input terminal IN and lead-out terminal OUT have carried out soldering in 6 places, so the installation strength of non-reciprocal circuit element is strong.

Frame side wall 81a, the 81c of resin box body 80, preferably be not two places all with upper cartridge body 70 solderings, but preferably only one of them has implemented soldering, perhaps bonding both.If, then can worsen the insertion loss with

frame side wall

81a, 81c both and upper cartridge body 70 solderings.This is to consider that the loop that forms high-frequency current on upper cartridge body 70, the high frequency magnetic field of generation can influence center conductor assembly 30.

As concrete example, the microwave ferrite 10 that use is made of the garnet of diameter 1.9mm * thickness 0.35mm, the ferrite permanet magnet 40 of length 2.8mm * width 2.5mm * thickness 0.4mm, by the Cu plate (having the semi-glossy Ag of thickness 1～4 μ m to electroplate) of the thickness 30 μ m of L word shape by the 1st center conductor 21 and the 2nd center conductor 22 of etching integral forming, make the microminiature non-reciprocal circuit element at above-mentioned such frequency 830～840MHz usefulness 3.2mm angle.The 1st center conductor 21 overall widths are 1.0mm, and 3 fillets arranged side by side of the width 0.2mm that is separated by the breach of 0.2mm constitute.The 2nd center conductor 22 is made of 1 fillet of width 0.2mm.As virtual resistance, soldering has the chip-resistance of 70 Ω on multilayer board 50.In addition, as the impedance adjusting mechanism, with the chip capacitor soldering of 1pF on the multilayer board 50 to be connected between the 1st input/output port P1 and the ground.

To the non-reciprocal circuit element of such making, under frequency 785～885MHz,, measure S by network analyser ₁₁Smith chart, input side reflection loss, insertion loss and isolation.In addition, as a comparison, to not connecting and other all are the non-reciprocal circuit element of identical formation, also carry out same mensuration as the chip capacitor of the coupling mechanism of input impedance.

Figure 13 is the S of the reflection characteristic of expression the 1st input/output port P1 ₁₁Smith chart.This S ₁₁Smith chart be expression the 2nd input/output port P2 when ending at characteristic impedance 50 Ω, reflected wave is to the ratio of the incident wave of the 1st input/output port P1 side.By S ₁₁Smith chart can confirm, when centre frequency 835MHz, relatively the impedance of example 1 is the impedance of 50+j11 Ω and expression dielectric resistance, represented the impedance of 50 Ω that 50+j0.3 Ω, imaginary part are minimum among the embodiment 1, therefore can realize good impedance matching.

Figure 14 represents the frequency characteristic of the reflection loss of the 1st input/output port P1 side.Reflection loss among the centre frequency 835MHz is 19dB in the example 1 relatively, is 39dB in embodiment 1, significantly improves.Figure 15 represents to insert the frequency characteristic of loss.The insertion loss of the non-reciprocal circuit element in centre frequency 835MHz is 0.52dB in the example 1 relatively, is 0.45dB in embodiment 1, improves.Isolation characteristic, as shown in figure 16, embodiment 1 does not have substantive difference with comparative example 1, and is all comparatively good.

Use capacity cell as impedance adjusting mechanism 90 in the above-described embodiments, but the present invention is not limited thereto certainly.At S shown in Figure 13 ₁₁The impedance of comparative example 1 is positioned at the first half (dielectric resistance) in the Smith chart, and in embodiment 1 be with capacitive character capacity cell Cz revisal imaginary part, to set input impedance be 50 Ω.In addition, be positioned at S when input impedance ₁₁During the latter half of Smith chart (R-jx), can be by the inductance element revisal imaginary part of dielectric resistance.

(embodiment 2)

Figure 18 represents the equivalent circuit of the non-reciprocal circuit element of an embodiment more of the present invention.Be that with embodiment 1 difference impedance adjusting mechanism 90 is made of on this point capacity cell Cz and the inductance component L z1 that is connected between the 1st input/output port P1 and the port PT.Inductance component L z1 is the distributed constant circuit that for example is made of the electrode pattern 512 that is formed on the dielectric sheet S6 among Figure 19.Figure 20 be embodiment 2 on non-reciprocal circuit element, do not connect inductance component L zl the time S ₁₁Smith chart, Figure 21 are the S of embodiment 2 ₁₁Smith chart.At S ₁₁In the Smith chart, mark 1～3 is represented 835MHz, 1.68GHz and 2.52GHz respectively.By connecting inductance component L z1, can roughly not change the matching condition of first-harmonic (835MHz), and can mobile higher harmonic component the phase theta of (1.68GHz:2 times ripple, 2.52GHz:3 times ripple).For this reason, can prevent that power amplifier and 2 terminals from becoming conjugate impedance match to the coupling of isolator, suppress the vibration of power amplifier.

(embodiment 3)

Figure 22 represents the equivalent circuit according to the non-reciprocal circuit element of another embodiment of the present invention.Be with embodiment 1 difference, on the antiresonant circuit this point that is connected with inductance component L W and capacity cell CW between port PE and the ground.This non-reciprocal circuit element can more be widened passband than the non-reciprocal circuit element of other structures.

In the example shown in Figure 23, make the non-reciprocal circuit element miniaturization for the quantity that does not increase boarded parts, inductance component L W is made of the distributed constant circuit that the electrode pattern 513 that is formed on the dielectric sheet S7 constitutes, make capacity cell CW by be formed on the electrode pattern 510 on the dielectric sheet S6, the electrode pattern GND at the back side constitutes, and they all is built on the multilayer board.And inductance component L W and capacity cell CW also can be made of the element that carries on multilayer board.

Non-reciprocal circuit element of the present invention by have the impedance adjusting mechanism between the 1st input/output port and the 1st inductance element, can not damage good insertion loss characteristic and isolation characteristic, can easily carry out the adjustment of input impedance.For this reason, when in the sending part of mobile communication machine, being configured between power amplifier and the antenna, not only can prevent to go into unwanted signal the impedance of load-side that can also the firm power amplifier to the power amplifier adverse current.Therefore, if use non-reciprocal circuit element of the present invention, then also can prolong the battery life of portable phone etc.

Claims

1, a kind of non-reciprocal circuit element is characterized in that, has:

Be configured in the 1st inductance element between the 1st input/output port and the 2nd input/output port;

Be configured in the 2nd inductance element between described the 2nd input/output port and the ground;

Constitute the 1st capacity cell of the 1st antiresonant circuit with described the 1st inductance element;

Constitute the 2nd capacity cell of the 2nd antiresonant circuit with described the 2nd inductance element;

The resistive element that is connected in parallel with described the 1st antiresonant circuit; With

Be configured in the impedance adjusting mechanism between described the 1st input/output port and described the 1st inductance element.

2, non-reciprocal circuit element according to claim 1 is characterized in that,

Described impedance adjusting mechanism is made of inductance element and/or capacity cell.

3, non-reciprocal circuit element according to claim 1 is characterized in that,

Described impedance adjusting mechanism is low pass filter or high pass filter.

4, according to each described non-reciprocal circuit element in the claim 1～3, it is characterized in that,

Between described the 2nd antiresonant circuit and ground, be provided with inductance element.

5, non-reciprocal circuit element according to claim 4 is characterized in that,

Between described the 2nd antiresonant circuit and ground, be arranged in parallel capacity cell with described inductance element.

6, according to each described non-reciprocal circuit element in the claim 1～5, it is characterized in that,

Described the 1st inductance element and described the 2nd inductance element are made of the 1st center conductor and the 2nd center conductor that are configured on the ferrite magnetic body.

7, according to each described non-reciprocal circuit element in the claim 1～6, it is characterized in that,

The described the 1st or at least a portion of the 2nd capacity cell form by the electrode pattern of multilayer board.

8, non-reciprocal circuit element according to claim 2 is characterized in that,

The element on described multilayer board constitutes by electrode pattern in the described multilayer board or lift-launch for inductance element that described impedance adjusting mechanism is used and/or capacity cell.