CN101582655B - 具有太阳能电池的便携式电子装置 - Google Patents

具有太阳能电池的便携式电子装置 Download PDF

Info

Publication number
CN101582655B
CN101582655B CN2008103016082A CN200810301608A CN101582655B CN 101582655 B CN101582655 B CN 101582655B CN 2008103016082 A CN2008103016082 A CN 2008103016082A CN 200810301608 A CN200810301608 A CN 200810301608A CN 101582655 B CN101582655 B CN 101582655B
Authority
CN
China
Prior art keywords
portable electron
electron device
shell
solar cell
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008103016082A
Other languages
English (en)
Other versions
CN101582655A (zh
Inventor
周代栩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN2008103016082A priority Critical patent/CN101582655B/zh
Priority to US12/417,863 priority patent/US20090284215A1/en
Publication of CN101582655A publication Critical patent/CN101582655A/zh
Application granted granted Critical
Publication of CN101582655B publication Critical patent/CN101582655B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30Electrical components
    • H02S40/38Energy storage means, e.g. batteries, structurally associated with PV modules
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
    • H02J7/35Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/56Power conversion systems, e.g. maximum power point trackers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E70/00Other energy conversion or management systems reducing GHG emissions
    • Y02E70/30Systems combining energy storage with energy generation of non-fossil origin

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明涉及一种便携式电子装置,其包括一外壳及一电路系统。所述电路系统设置于外壳内。所述电路系统包括一驱动电路,用于驱动所述便携式电子装置工作。所述便携式电子装置进一步包括一太阳能电池。所述外壳具有由高透光率的透明材料制成的透光处。该太阳能电池正对所述外壳的透光处。光线经过所述透光处照射至太阳能电池上产生电能,通过太阳能电池自身产生的电能为所述驱动电路提供工作电源。本发明的便携式电子装置可通过太阳能电池自身产生电能,这样可以延长便携式电子装置的电力使用时间。

Description

具有太阳能电池的便携式电子装置
技术领域
本发明涉及一种便携式电子装置,尤其涉及一种具有太阳能电池的便携式电子装置。
背景技术
现有的便携式电子装置(例如手机、PDA、MP3等)的输入方式越来越多样化,使用者可利用不同的输入方式来实现不同的功能,例如通讯、游戏、摄像功能等。相关技术可参见Stephan Hartwig等人在文献IEEE Transactions on Consumer Electronics,Vol.46,No.4(2000年11月)中的MOBILE MULTIMEDIA-CHALLENGESAND OPPORTUNITIES INVITED PAPER一文。
现有的便携式电子装置多采用锂电池或镍氢电池等,需要连接外接电源对这些电池进行充电,以维持便携式电子装置的正常工作。然而由于这些电池需经常充电,所以便携式电子装置使用起来比较不方便,且电池的使用时间较短。尤其是在野外的环境下,因为当电池电力不足,而周围又没有电力设备时,这样就无法快速解决电池充电的问题。
发明内容
有鉴于此,有必要提供一种可以自身提供电力延长电力使用时间的便携式电子装置。
一种便携式电子装置,其包括一外壳及一电路系统。所述电路系统设置于外壳内。所述电路系统包括一驱动电路,用于驱动所述便携式电子装置工作。所述便携式电子装置进一步包括一太阳能电池。所述外壳具有由高透光率的透明材料制成的透光处。该太阳能电池正对所述外壳的透光处。光线经过所述透光处照射至太阳能电池上产生电能,通过太阳能电池自身产生的电能为所述驱动电路提供工作电源。
相较于现有技术,所述便携式电子装置具有太阳能电池,这样,可以利用大自然中的太阳能对其充电,因此可以依靠太阳能电池的电能为便携式电子装置提供电力或作为便携式电子装置的辅助电源,尤其是在野外的环境下。所述便携式电子装置可随时产生电能,而不必担心电池电力不足的问题。
附图说明
图1是本发明第一实施方式提供的便携式电子装置的立体示意图;
图2是图1中便携式电子装置的太阳能电池与蓄电池的结构示意图;
图3是图1中便携式电子装置的电路系统的结构示意图;
图4是本发明第二实施方式提供的便携式电子装置立体示意图。
具体实施方式
请一并参阅图1至图3,本发明第一实施方式提供一种便携式电子装置。本实施方式中,该便携式电子装置为一手机100。可以理解,本发明的便携式电子装置并不限于手机,还可以为笔记本电脑、个人数码助理等。该手机100具有一外壳10、一显示部12、一按键部14,一太阳能电池20及一电路系统40。
该外壳10由前壳102、后壳104及后盖164组成。该后壳104、后盖164分别与前壳102扣合。所述电路系统40安装于该外壳10内。所述外壳10上设有一透光处,本实施方式中,所述透光处为外壳10的前壳102,该前壳102由高透光率的透明材质制成,该高透光率的透明材质可以为透明树脂(APEL)、亚克力(PMMA)或多聚环氧化合物(PC)中的一种。所述后盖164与后壳104的材料相同,可为不透明材料,其材料可以为塑料或金属等。
所述显示部12和按键部14嵌设于该外壳10的前壳102外表面,且显示部12和按键部14相邻设置。该显示部12用于显示图像或文字等信息,其为液晶面板、发光二极管显示面板等。该按键部14包括多个按键,其用于输入文字或数字符号信息等。
本实施方式中,所述太阳能电池20设置于外壳10内,且该太阳能电池20正对所述前壳102。光线经过由高透光率的透明材质制成的前壳102后,照射至所述太阳能电池20上,以产生电能。所述太阳能电池20包括一个基板27,所述基板27具有一个承载面272,所述基板27的承载面272上依次形成有:背电极(Back MetalContact Layer)26,P型半导体层25,P-N结层24,N型半导体层23,透明导电层(Transparent Conductive Oxide)22,及前电极(Front Metal Contact Layer)21。
所述基板27是可挠曲的材料制成,该基板27的厚度大约在10μm至100μm之间。本实施方式中,所述基板27是可挠曲的铝镁合金箔(Al-Mg alloy foil)、不锈钢片(stainless steel sheet),或聚合物薄板(polymer sheet)等可挠曲的材料制成。实际应用中,所述基板27也可由单晶硅、多晶硅或玻璃材料制成,并不限于本实施方式。
所述背电极26的材料可以是银(Ag),铜(Cu),钼(Mo),铝(Al),铜铝合金(Cu-Al Alloy),银铜合金(Ag-Cu Alloy),或者铜钼合金(Cu-Mo Alloy)等。所述背电极26的侧边设有一电连接端261。
所述P型半导体层25的材料可以是P型非晶硅(P typeamorphous silicon,简称P-a-Si)材料,特别是P型含氢非晶硅(Ptype amorphous silicon with hydrogen,简称P-a-Si:H)材料。当然,该P型半导体层的材料也可以是III-V族化合物或II-VI族化合物,特别是掺杂铝(Al)、钾(Ga)、铟(In)的半导体材料,如氮化铝钾(AlGaN)或铝砷化镓(AlGaAs)。优选地,所述P型半导体层25的材料为P型非晶硅材料。
所述P-N结层24的材料可以是结合性较好的III-V族化合物或I-III-VI族化合物,如碲化镉(CdTe)、铜铟硒(CuInSe2)等材料。也可以是铜铟镓硒(CuIn1-XGaSe2,CIGS)。该P-N结层24用于将光子转换成电子-孔穴对并形成势垒电场。
N型半导体层23的材料可以是N型非晶硅(N Type AmorphousSilicon,简称N-a-Si)材料,特别是N型含氢非晶硅(N TypeAmorphous Silicon With Hydrogen,简称N-a-Si:H)材料。当然,该N型半导体层23的材料也可以是III-V族化合物或II-VI族化合物,特别是掺杂氮(N)、磷(P)、砷(As)的半导体材料,如氮化钾(GaN)或磷化铟镓(InGaP)。
透明导电层22的材料可以是,例如,铟锡氧化层(Indium TinOxide,ITO),氧化锌(ZnO)等。
前电极21的材料可以是银(Ag),铜(Cu),钼(Mo),铝(Al),铜铝合金(Cu-Al Alloy),银铜合金(Ag-Cu Alloy),或者铜钼合金(Cu-Mo Alloy)等。
所述手机100进一步包括一蓄电部(Rechargeable Battery)42,所述太阳能电池20进行光电转换产生电能后通过其前电极21和背电极26上的电连接端261分别连接至蓄电部42的正负极上可对其充电,所述蓄电部42存储所述太阳能电池20产生的电能。
可以理解,所述后壳104也可由高透光率的透明的材质制成以作为外壳10的透光处,所述太阳能电池20设置于外壳10内,且该太阳能电池20的透明导电层22正对所述后壳104,光线经过所述后壳104照射至所述太阳能电池20以产生电能,并不限于本实施方式。
所述电路系统40包括一可充电器件44、一电源切换电路46及一驱动电路48。
所述可充电器件44为一锂电池或镍氢电池,其与所述蓄电部42并联连接至电源切换电路46,所述电源切换电路46用于在可充电器件44与蓄电部42之间选择,以控制是由可充电器件44为所述驱动电路48提供电力以提供手机100的工作电源,还是由存储有太阳能电池20产生的电能的蓄电部42为所述驱动电路48提供电力以提供手机100的工作电源。
实际应用中,也可不设有可充电器件44与电源切换电路46,而直接通过太阳能电池20为所述手机100的驱动电路48提供工作电源,并不限于本实施方式。
请参阅图4,本发明第二实施方式提供另一种手机200。所述手机200的结构与所述手机100的结构大体相同,该手机200的结构与手机100的结构主要差异在于:所述外壳10的透光处为后盖264,该后盖264由高透光率的透明材质制成,该后盖264盖设在可充电器件44上。所述太阳能电池80设置于可充电器件44与后盖264之间且固设于后盖264上。光线经过所述后盖264照射至所述太阳能电池20以产生电能。
实际应用中,所述外壳10也可只有正对太阳能电池80的位置设置透光处,也外壳10的其他区域可由高透光率的透明材质制成,也可由其他一些不透明的材质制成。所述太阳能电池80正对所述透光处以产生电能,并不限于本实施方式。
所述便携式电子装置具有太阳能电池,这样,可以利用大自然中的太阳能对其充电,因此可以依靠太阳能电池的电能为便携式电子装置提供电力或作为便携式电子装置的辅助电源,尤其是在野外的环境下。所述便携式电子装置可随时产生电能,而不必担心电池电力不足的问题。
另外,本领域技术人员还可在本发明精神内做其它变化,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (6)

1.一种便携式电子装置,其包括一外壳及一电路系统,所述电路系统设置于外壳内,所述电路系统包括一驱动电路,用于驱动所述便携式电子装置工作,其特征在于:所述便携式电子装置进一步包括一太阳能电池,所述太阳能电池作为所述便携式电子装置的辅助电源,所述外壳具有由高透光率的透明材料制成的透光处,该太阳能电池设置于所述外壳内且正对所述外壳的透光处,光线经过所述透光处照射至太阳能电池上产生电能;所述便携式电子装置进一步包括一蓄电部,所述太阳能电池与所述蓄电部串联,该蓄电部用于存储所述太阳能电池产生的电能;所述电路系统进一步包括一可充电器件及一电源切换电路,所述可充电器件由一外接电源进行充电,所述可充电器件与所述蓄电部并联连接至所述电源切换电路,所述电源切换电路用于在可充电器件与蓄电部之间切换给所述驱动电路提供电力。 
2.如权利要求1所述的便携式电子装置,其特征在于:所述外壳由前壳、后壳及后盖组成,所述透光处设置于所述前壳、后壳及后盖中至少其中之一。 
3.如权利要求1所述的便携式电子装置,其特征在于:所述便携式电子装置为一手机。 
4.如权利要求1所述的便携式电子装置,其特征在于:所述该高透光率的透明材质可以为透明树脂、亚克力或多聚环氧化合物。 
5.如权利要求1所述的便携式电子装置,其特征在于:所述太阳能电池包括一个基板、一层背电极、一层P型半导体层、一层P-N结层、一层N型半导体层、一层透明导电层、及一层前电极,所述基板包括一个承载面,所述背电极形成在该基板的承载面上,所述P型半导体层形成在该背电极上,所述P-N结层形成在该P型半导体层上,所述N型半导体层形成在该P-N结层上,所述透明 导电层形成在该N型半导体层上。 
6.如权利要求7所述的便携式电子装置,其特征在于:所述太阳能电池的基板由可挠曲的材料制成。 
CN2008103016082A 2008-05-16 2008-05-16 具有太阳能电池的便携式电子装置 Expired - Fee Related CN101582655B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008103016082A CN101582655B (zh) 2008-05-16 2008-05-16 具有太阳能电池的便携式电子装置
US12/417,863 US20090284215A1 (en) 2008-05-16 2009-04-03 Portable electronic device having solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008103016082A CN101582655B (zh) 2008-05-16 2008-05-16 具有太阳能电池的便携式电子装置

Publications (2)

Publication Number Publication Date
CN101582655A CN101582655A (zh) 2009-11-18
CN101582655B true CN101582655B (zh) 2013-05-08

Family

ID=41315558

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008103016082A Expired - Fee Related CN101582655B (zh) 2008-05-16 2008-05-16 具有太阳能电池的便携式电子装置

Country Status (2)

Country Link
US (1) US20090284215A1 (zh)
CN (1) CN101582655B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006137337A1 (ja) * 2005-06-23 2006-12-28 Tpo Hong Kong Holding Limited 光電変換機能を有する液晶表示装置
EP2360823A3 (en) * 2010-02-12 2017-03-22 OCT Circuit Technologies International Limited Contrôl de la tension d'un convertisseur CC/CC
CN102810998A (zh) * 2011-06-03 2012-12-05 鸿富锦精密工业(深圳)有限公司 电子装置保护套
TW201301090A (zh) * 2011-06-30 2013-01-01 Hon Hai Prec Ind Co Ltd 滑鼠
CN102855002A (zh) * 2011-07-01 2013-01-02 鸿富锦精密工业(深圳)有限公司 鼠标
CN102867888A (zh) * 2011-07-06 2013-01-09 刘莹 一种在手机壳体上制备薄膜太阳能电池的方法
TWM435771U (en) * 2012-04-27 2012-08-11 Giga Solar Materials Corp Card type solar charger
US20160044146A1 (en) * 2014-07-15 2016-02-11 Princess Danielle Mitchell Solar Integrated Mobile and Electronic Devices with Backside Solar Panels
CN107799614A (zh) * 2017-10-31 2018-03-13 厦门祐尼三的新材料科技有限公司 一种太阳能发电手机后盖
CN111328219A (zh) * 2020-03-31 2020-06-23 Oppo广东移动通信有限公司 用于电子设备的背壳、电子设备、制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2444365Y (zh) * 2000-11-30 2001-08-22 上海昊鑫科技发展有限公司 具有太阳能供电功能的手机
CN1787541A (zh) * 2004-12-10 2006-06-14 上海迪比特实业有限公司 具有双模充电方式的手机
CN1863349A (zh) * 2005-05-10 2006-11-15 英华达(上海)电子有限公司 具有太阳能供电功能的手机
CN2867734Y (zh) * 2006-02-20 2007-02-07 张林岳 太阳能手机机壳
CN2924944Y (zh) * 2006-07-05 2007-07-18 北京恒基伟业投资发展有限公司 内置式太阳能手机
CN200956599Y (zh) * 2006-09-29 2007-10-03 北京恒基伟业投资发展有限公司 手机太阳能电池盖

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112549A (ja) * 1996-10-08 1998-04-28 Canon Inc 太陽電池モジュール
US5903764A (en) * 1997-05-02 1999-05-11 Micro International, Ltd. Smart battery selector offering power conversion internally within a portable device
CN1417883A (zh) * 2001-11-02 2003-05-14 王维海 一种太阳能手机充电电池
AU2003212271A1 (en) * 2003-02-25 2004-09-17 Vhf Technologies Sa Photovoltaic device
JP2008522359A (ja) * 2004-11-26 2008-06-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ エネルギーシステム、電子モジュール、電子デバイス、及び該エネルギーシステムの製造方法
TWM266454U (en) * 2004-12-06 2005-06-01 Ftech Corp Bluetooth satellite positioning system receiver with solar energy board
US20060130889A1 (en) * 2004-12-22 2006-06-22 Motorola, Inc. Solar panel with optical films
CN1988321A (zh) * 2005-12-19 2007-06-27 上海甲秀工业设计有限公司 采用太阳能的电子控制装置
CN100440612C (zh) * 2006-01-06 2008-12-03 华为技术有限公司 一种光电充电器、充电方法及其应用的电子产品
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2444365Y (zh) * 2000-11-30 2001-08-22 上海昊鑫科技发展有限公司 具有太阳能供电功能的手机
CN1787541A (zh) * 2004-12-10 2006-06-14 上海迪比特实业有限公司 具有双模充电方式的手机
CN1863349A (zh) * 2005-05-10 2006-11-15 英华达(上海)电子有限公司 具有太阳能供电功能的手机
CN2867734Y (zh) * 2006-02-20 2007-02-07 张林岳 太阳能手机机壳
CN2924944Y (zh) * 2006-07-05 2007-07-18 北京恒基伟业投资发展有限公司 内置式太阳能手机
CN200956599Y (zh) * 2006-09-29 2007-10-03 北京恒基伟业投资发展有限公司 手机太阳能电池盖

Also Published As

Publication number Publication date
CN101582655A (zh) 2009-11-18
US20090284215A1 (en) 2009-11-19

Similar Documents

Publication Publication Date Title
CN101582655B (zh) 具有太阳能电池的便携式电子装置
US9509174B2 (en) Device for improving endurance of terminal and terminal thereof
US20090084439A1 (en) TCO-based hybrid solar photovoltaic energy conversion apparatus
CN101572510B (zh) 太阳能供电装置及包括该供电装置的照明系统
JPH0460355B2 (zh)
US9965080B2 (en) Color filter substrate with photovoltaic conversion layer, display panel and touch display device
US9990879B2 (en) Display device with solar cell module
CN105514194B (zh) 太阳电池模块及其制备方法
JP3147862U (ja) 携帯式ソーラー充電装置
CN107845688A (zh) 太阳能电池镂空电路及太阳能电池显示装置
CN102855002A (zh) 鼠标
US9865576B1 (en) Solar cell hollow circuit and solar cell display device
US20130002554A1 (en) Solar-powered mouse
CN107403594A (zh) 太阳能显示设备
CN209963822U (zh) 柔性电源模块和电子设备
CN201859370U (zh) 具有透明薄膜太阳能板的笔记本型电脑
JP2005116324A (ja) 複合電池およびこれを含む電子機器
TW200950465A (en) Portable electronic device incorporating with solar cell
CN110650606A (zh) 壳体及其制备方法和电子设备
CN219085354U (zh) 具有光电和热电转化功能的笔记本电脑
TWI536592B (zh) 光伏打裝置及其相關方法
CN210745236U (zh) 一种具有发电功能的手机后盖
WO2013174056A1 (zh) 太阳能电池
CN207588801U (zh) 一种支持太阳能充电的盖板及移动终端
CN201108092Y (zh) 一种钥匙扣

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130508

Termination date: 20150516

EXPY Termination of patent right or utility model