CN101579743B - 钽粉及其制造方法 - Google Patents
钽粉及其制造方法 Download PDFInfo
- Publication number
- CN101579743B CN101579743B CN200910146899.7A CN200910146899A CN101579743B CN 101579743 B CN101579743 B CN 101579743B CN 200910146899 A CN200910146899 A CN 200910146899A CN 101579743 B CN101579743 B CN 101579743B
- Authority
- CN
- China
- Prior art keywords
- powder
- tantalum
- tantalum powder
- mill
- abrasive media
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 76
- 239000000843 powder Substances 0.000 claims abstract description 67
- 239000012530 fluid Substances 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000000227 grinding Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000000498 ball milling Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 48
- 229910052751 metal Inorganic materials 0.000 abstract description 43
- 239000002184 metal Substances 0.000 abstract description 43
- 229910052715 tantalum Inorganic materials 0.000 abstract description 27
- 238000003801 milling Methods 0.000 abstract description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052758 niobium Inorganic materials 0.000 abstract description 5
- 239000010955 niobium Substances 0.000 abstract description 5
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 238000002048 anodisation reaction Methods 0.000 description 5
- 239000011324 bead Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000001238 wet grinding Methods 0.000 description 3
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 230000004883 flower formation Effects 0.000 description 2
- 238000000713 high-energy ball milling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010316 high energy milling Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47741803P | 2003-06-10 | 2003-06-10 | |
| US60/477,418 | 2003-06-10 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800228012A Division CN100528417C (zh) | 2003-06-10 | 2004-06-09 | 钽粉及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101579743A CN101579743A (zh) | 2009-11-18 |
| CN101579743B true CN101579743B (zh) | 2014-11-26 |
Family
ID=33551715
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910146899.7A Expired - Lifetime CN101579743B (zh) | 2003-06-10 | 2004-06-09 | 钽粉及其制造方法 |
| CNB2004800228012A Expired - Lifetime CN100528417C (zh) | 2003-06-10 | 2004-06-09 | 钽粉及其制造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800228012A Expired - Lifetime CN100528417C (zh) | 2003-06-10 | 2004-06-09 | 钽粉及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7142408B2 (enExample) |
| JP (6) | JP2007511667A (enExample) |
| CN (2) | CN101579743B (enExample) |
| WO (1) | WO2004110684A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101010160A (zh) * | 2004-06-28 | 2007-08-01 | 卡伯特公司 | 高电容钽片及其制备方法 |
| DE102004049040B4 (de) * | 2004-10-08 | 2008-11-27 | H.C. Starck Gmbh | Verfahren zur Herstellung von Festelektrolytkondensatoren |
| DE102004049039B4 (de) * | 2004-10-08 | 2009-05-07 | H.C. Starck Gmbh | Verfahren zur Herstellung feinteiliger Ventilmetallpulver |
| JP2006278851A (ja) * | 2005-03-30 | 2006-10-12 | Nichicon Corp | 固体電解コンデンサ素子の製造方法 |
| US8241470B1 (en) * | 2006-06-28 | 2012-08-14 | Tantalum Pellet Company | Method of anodizing |
| DE112007001100T5 (de) * | 2006-05-05 | 2009-05-14 | Cabot Corp., Boston | Tantalpulver mit glatter Oberfläche und Verfahren zur Herstellung desselben |
| US7154742B1 (en) * | 2006-05-10 | 2006-12-26 | Kemet Electronics Corporation | Fluted anode with improved capacitance and capacitor comprising same |
| US20080026955A1 (en) * | 2006-07-25 | 2008-01-31 | Halliburton Energy Services, Inc. | Degradable particulates and associated methods |
| GB0622463D0 (en) * | 2006-11-10 | 2006-12-20 | Avx Ltd | Powder modification in the manufacture of solid state capacitor anodes |
| US20080229880A1 (en) * | 2007-03-23 | 2008-09-25 | Reading Alloys, Inc. | Production of high-purity tantalum flake powder |
| US20080233420A1 (en) * | 2007-03-23 | 2008-09-25 | Mccracken Colin G | Production of high-purity tantalum flake powder |
| CN104889381A (zh) * | 2007-08-16 | 2015-09-09 | H.C.施塔克有限公司 | 由阀金属和阀金属低氧化物组成的纳米结构及其制备方法 |
| EP2214853A4 (en) * | 2007-10-15 | 2013-05-22 | Hi Temp Specialty Metals Inc | PROCESS FOR PREPARING TANTALUM POWDER USING RECYCLED AGENTS AS AN EXISTING MATERIAL |
| US8687347B2 (en) | 2011-01-12 | 2014-04-01 | Avx Corporation | Planar anode for use in a wet electrolytic capacitor |
| US8477479B2 (en) | 2011-01-12 | 2013-07-02 | Avx Corporation | Leadwire configuration for a planar anode of a wet electrolytic capacitor |
| DE102013101443B4 (de) * | 2012-03-01 | 2025-05-28 | KYOCERA AVX Components Corporation (n. d. Ges. d. Staates Delaware) | Verfahren zum Ausbilden eines Ultrahochspannungs-Festelektrolytkondensators |
| US9548163B2 (en) | 2012-07-19 | 2017-01-17 | Avx Corporation | Solid electrolytic capacitor with improved performance at high voltages |
| US9514890B2 (en) * | 2013-03-13 | 2016-12-06 | Kemet Electronics Corporation | Low energy milling to produce flake powders |
| EP3089180B1 (en) | 2013-12-25 | 2019-11-06 | Ningxia Orient Tantalum Industry Co., Ltd. | Capacitor grade high specific volume tantalum powder improving electrical performance and preparation method therefor |
| CN105051225A (zh) * | 2014-02-21 | 2015-11-11 | 宁夏东方钽业股份有限公司 | 一种钽粉的湿式球磨方法及由该方法制备的钽粉 |
| EP3486338B1 (en) * | 2016-07-13 | 2023-06-21 | Ningxia Orient Tantalum Industry Co., Ltd. | Flaky tantalum powder and method for preparing the same |
| BR102021017032A2 (pt) * | 2021-08-27 | 2023-03-07 | Instituto Hercílio Randon | Preparado de nanopartículas de tântalo, uso e processo para sua obtenção |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580367A (en) * | 1987-11-30 | 1996-12-03 | Cabot Corporation | Flaked tantalum powder and method of using same flaked tantalum powder |
| CN1367724A (zh) * | 1999-03-19 | 2002-09-04 | 卡伯特公司 | 通过研磨制备铌和其它金属粉末 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188701A (ja) * | 1986-02-15 | 1987-08-18 | Keijiyou Kioku Gokin Gijutsu Kenkyu Kumiai | 粉末成形方法 |
| US5211741A (en) * | 1987-11-30 | 1993-05-18 | Cabot Corporation | Flaked tantalum powder |
| KR960014946B1 (ko) * | 1988-12-22 | 1996-10-21 | 더 유니버어스티 오브 웨스트런 오스트레일리아 | 금속, 합금, 세라믹 재료의 제조 방법 |
| JPH04314802A (ja) * | 1991-04-12 | 1992-11-06 | Daido Steel Co Ltd | フレーク粉の製造方法 |
| US5217526A (en) * | 1991-05-31 | 1993-06-08 | Cabot Corporation | Fibrous tantalum and capacitors made therefrom |
| US5448447A (en) * | 1993-04-26 | 1995-09-05 | Cabot Corporation | Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom |
| ES2140733T3 (es) * | 1995-05-26 | 2000-03-01 | Goldschmidt Ag Th | Proceso para la preparacion de polvo metalico amorfo a los rayos x y nanocristalino. |
| JPH09296201A (ja) * | 1996-03-04 | 1997-11-18 | Hitachi Maxell Ltd | 合金の製造方法及び合金、これを用いた合金含有シ−ト |
| US5954856A (en) * | 1996-04-25 | 1999-09-21 | Cabot Corporation | Method of making tantalum metal powder with controlled size distribution and products made therefrom |
| PT964936E (pt) * | 1997-02-19 | 2002-03-28 | Starck H C Gmbh | Po de tantalo seu processo de producao e anodos sinterizados produzidos a partir deste po |
| CZ300529B6 (cs) * | 1997-02-19 | 2009-06-10 | H.C. Starck Gmbh | Práškový tantal, zpusob jeho výroby a z nej vyrobené anody a kondezátory |
| WO2000067936A1 (en) * | 1998-05-06 | 2000-11-16 | H.C. Starck, Inc. | Metal powders produced by the reduction of the oxides with gaseous magnesium |
| DE19847012A1 (de) * | 1998-10-13 | 2000-04-20 | Starck H C Gmbh Co Kg | Niobpulver und Verfahren zu dessen Herstellung |
| JP3871824B2 (ja) * | 1999-02-03 | 2007-01-24 | キャボットスーパーメタル株式会社 | 高容量コンデンサー用タンタル粉末 |
| US6375704B1 (en) * | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
| US6436268B1 (en) * | 2000-08-02 | 2002-08-20 | Kemet Electronics Corporation | Non-aqueous electrolytes for anodizing |
| US6652619B2 (en) * | 2000-08-10 | 2003-11-25 | Showa Denko K.K. | Niobium powder, sintered body thereof, and capacitor using the same |
| JP2002285369A (ja) * | 2001-03-23 | 2002-10-03 | Permelec Electrode Ltd | 過酸化水素水及び次亜ハロゲン化物の製造用電解槽及び方法 |
| CN1174826C (zh) * | 2001-06-26 | 2004-11-10 | 中国科学院长春应用化学研究所 | 钨铝合金粉末的制备方法 |
-
2004
- 2004-06-09 WO PCT/US2004/018288 patent/WO2004110684A2/en not_active Ceased
- 2004-06-09 CN CN200910146899.7A patent/CN101579743B/zh not_active Expired - Lifetime
- 2004-06-09 JP JP2006533642A patent/JP2007511667A/ja active Pending
- 2004-06-09 US US10/864,253 patent/US7142408B2/en not_active Expired - Lifetime
- 2004-06-09 CN CNB2004800228012A patent/CN100528417C/zh not_active Expired - Lifetime
-
2012
- 2012-02-20 JP JP2012034356A patent/JP5773441B2/ja not_active Expired - Lifetime
-
2014
- 2014-08-01 JP JP2014157711A patent/JP2014222776A/ja active Pending
-
2016
- 2016-03-18 JP JP2016055884A patent/JP2016146500A/ja active Pending
-
2017
- 2017-02-22 JP JP2017031489A patent/JP6563968B2/ja not_active Expired - Lifetime
-
2018
- 2018-12-28 JP JP2018248509A patent/JP2019085651A/ja not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580367A (en) * | 1987-11-30 | 1996-12-03 | Cabot Corporation | Flaked tantalum powder and method of using same flaked tantalum powder |
| CN1367724A (zh) * | 1999-03-19 | 2002-09-04 | 卡伯特公司 | 通过研磨制备铌和其它金属粉末 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004110684A3 (en) | 2005-06-09 |
| CN1832823A (zh) | 2006-09-13 |
| JP2007511667A (ja) | 2007-05-10 |
| WO2004110684A2 (en) | 2004-12-23 |
| JP2014222776A (ja) | 2014-11-27 |
| JP5773441B2 (ja) | 2015-09-02 |
| US20040252445A1 (en) | 2004-12-16 |
| JP2016146500A (ja) | 2016-08-12 |
| JP2017119919A (ja) | 2017-07-06 |
| JP2012169631A (ja) | 2012-09-06 |
| US7142408B2 (en) | 2006-11-28 |
| CN100528417C (zh) | 2009-08-19 |
| JP6563968B2 (ja) | 2019-08-21 |
| CN101579743A (zh) | 2009-11-18 |
| JP2019085651A (ja) | 2019-06-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141126 |