CN101562143B - Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device - Google Patents
Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device Download PDFInfo
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- CN101562143B CN101562143B CN 200910142031 CN200910142031A CN101562143B CN 101562143 B CN101562143 B CN 101562143B CN 200910142031 CN200910142031 CN 200910142031 CN 200910142031 A CN200910142031 A CN 200910142031A CN 101562143 B CN101562143 B CN 101562143B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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Abstract
The present invention provides a method for manufacturing a semiconductor device for improving a productivity of the semiconductor device, a method and a structure for mounting the semiconductor device. A protective layer (4) is coated with an acroid resin which is used as a light-sensitive resin for forming a bulging body (5), to form a resin layer. On the resin layer, a mask having an opening portion is located at a prescribed position, further part of the resin layer exposing from the opening portion is exposed by irradiating ultraviolet on the mask. By means of solidifying the resin through the ultraviolet, a cylinder-shaped bulging body (5b) having a plane top is formed. Then, the ultraviolet (11) is irradiated on the bulging body (5b) to heat the bulging body (5b), such that the acroid resin for forming the bulging body (5b) is melted. Due to a surface tension generated on the melted resin, the top of the planar bulging body (5b) is deformed into a smooth curved face. thereby a near-hemisphere-shaped bulging body (5) is formed from the bulging body (5b).
Description
The present invention's application number that to be applicant Seiko Epson Corp propose on March 21st, 2006 be 200610068103.7, denomination of invention divides an application for " method for making of semiconductor device, the installation method of semiconductor device and mounting structure " patent application.
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, the installation method and the mounting structure of semiconductor device.
Background technology
In the past, be installed to the method for attachment that shows on the body device substrate with driving, be well known that COG (Chip On Glass) connected with IC as being used for.In this COG connects, for example will electroplate projection (being designated hereinafter simply as projection) as the Au of electrode and be formed at driving with on the IC.Then, adopt following installation method, promptly by using the grafting material with conductivity of anisotropic conducting film (ACF) and anisotropy conductiving glue (ACP) and so on, be electrically connected with terminal electrode on being formed on demonstration body device substrate being formed to drive, will drive and be installed on the substrate with IC with the projection of IC.
Yet, in recent years, along with the granular (interelectrode thin spaceization) of electrode progress, interelectrode size approaches to be included in the size of the conductive particle of anisotropic conducting film (ACF) etc., and its result can produce because of conductive particle enters between this electrode and cause problem of short-circuit.
On the other hand, if for fear of above-mentioned short circuit, and use does not comprise the grafting material (for example non-conductive glue (NCP)) of conductive particle, to drive with IC and be installed on the substrate, then can reduce driving with the projection of IC and the touch opportunity between the terminal electrode on the substrate, its result can be owing to poor flow has the anxiety of connection reliability reduction.
Therefore, for fear of the reduction of this contact reliability, consider to use projected electrode (the flat 1-13734 communique of Japan's patent disclosure).Specifically, be will drive when being installed on the substrate with IC, the projection body that is formed by resin is provided with from driving the projected electrode with the extended distribution of electrode of IC, contacts with the terminal electrode that forms on substrate.At this moment, because the fore-end of projected electrode rides on the terminal electrode, produced distortion so can press to grind.Therefore, increase the area that projected electrode and terminal electrode are in contact with one another, can stably guarantee to drive with the projected electrode of IC and the conducting between the electrode terminal on the substrate.Therefore, even under the situation of using the grafting material that does not contain conductive particle, projection and the contact reliability between the terminal electrode on the substrate that also can avoid driving with IC reduce.
Yet, in above-mentioned projected electrode, the photosensitive insulating resin exposure by utilizing ultraviolet ray etc. to make to form the projection body, solidify, carry out the shape control of projection body.But, as utilizing exposure such as ultraviolet ray, the shape control that photosensitive insulating resin is solidified carry out the projection body then can make conditions of exposure change because of the deterioration of Exposing Lamp, thereby be difficult to carry out the control of shape.Thus, can produce the problem of the productivity ratio reduction of semiconductor device.
And, consider if in the resin of the core that forms above-mentioned projected electrode, use the low resin of spring rate such as silicon, then since the condition of the pressurized treatments when installing can make the resin that forms the projected electrode core produce and surpass the large deformation that needs, thereby cause the distribution broken string of projected electrode.In this case, also can produce the projected electrode of driving usefulness IC and the problem that the connection reliability between the terminal electrode on the substrate reduces.And, in order to improve grafting material productivity ratio, there is the trend that improves curing temperature, shortens the connection material of curing time that adopts.Therefore, even need under the condition that high temperature is installed, also can guarantee the structure of the projected electrode that connects reliably.
Summary of the invention
The objective of the invention is to, a kind of manufacture method of semiconductor device of the productivity ratio that realizes improving semiconductor device is provided.
And, the objective of the invention is to, the installation method and the mounting structure of the semiconductor device of a kind of electrode that can realize improving semiconductor device and the connection reliability between the electrode on the installation base plate is provided.
Make semiconductor device with the manufacture method of semiconductor device of the present invention, described semiconductor device has: electrode, from above-mentioned electrode protuberance outstanding and that form by resin and with above-mentioned electrode be electrically connected to raised part above conductive layer.In the manufacture method of such semiconductor device, fuse above-mentioned resin and form raised part.
According to the manufacture method of semiconductor device of the present invention, the resin of fusion formation protuberance forms the shape of protuberance.Therefore, can not control the shape of protuberance by exposure.That is, because can not be according to the shape control of the conditions of exposure left and right sides protuberance of ultraviolet ray etc., so can seek to improve the productivity ratio of semiconductor device.
In the manufacture method of semiconductor device of the present invention, the section of raised part forms semicircle shape.According to the manufacture method of this semiconductor device, form the resin of protuberance by abundant fusion, make on the resin of fusion, to produce surface tension, the section of protuberance is formed semicircle shape.Thus, because can be by the shape control of the conditions of exposure left and right sides protuberance of ultraviolet ray etc., so can seek to improve effectively the productivity ratio of semiconductor device.
In the manufacture method of this semiconductor device, above-mentioned resin is a photoresist.According to the manufacture method of this semiconductor device, use photoresist as the resin that forms protuberance.Therefore,, carry out before the control of protuberance shape,, can control the preceding resin shape of fusion by exposure-processed at the fusion resin.Therefore, on the basis that forms meticulousr protuberance shape, can seek to improve the productivity ratio of semiconductor device.
In the manufacture method of this semiconductor device, adopted acrylic resin as above-mentioned resin.According to the manufacture method of this semiconductor device, the resin that forms protuberance can use acrylic resin.That is, because the fusion acrylic resin can make its shape that forms protuberance, so can be because of the shape control of conditions of exposure left and right sides protuberances such as ultraviolet ray.Therefore, can positively improve the productivity ratio of semiconductor device.
In the manufacture method of this semiconductor device, make above-mentioned resin fusion by photothermal heating.According to the manufacture method of this semiconductor device, owing to above-mentioned resin heat is added by radiant heat, so can efficiently fuse resin.That is, but because the localized heating resin, so can easily fuse resin.Therefore, can easily not improve the productivity ratio of semiconductor device because of the shape control of conditions of exposure left and right sides protuberances such as ultraviolet ray.
In the manufacture method of this semiconductor device, be provided with a plurality of above-mentioned electrodes, form raised part in the mode that strides across the above-mentioned a plurality of electrodes that adjoin each other, and corresponding each above-mentioned electrode covers above-mentioned conductive layer on raised part, with above-mentioned each conductive layer and corresponding above-mentioned electrode electrical connection.
Manufacture method according to this semiconductor device, need not corresponding each electrode and the independent protuberance that forms, when can seek to shorten manufacturing time, because can not be by the control of conditions of exposure left and right sides protuberance shapes such as ultraviolet ray, so can further improve the productivity ratio of semiconductor device.
And; the invention provides a kind of manufacture method of semiconductor device, it has: in the step that forms electrode on the substrate, form the step of the diaphragm that covers this electrode, on this diaphragm, form the projection body of resin manufacture step, fuse the step that this projection body forms the step of the protuberance with smooth surface and forms the conductive layer that covers raised part and be electrically connected with above-mentioned electrode.
And, in the manufacture method of this semiconductor device, by implementing the heating and pressurizing processing and utilizing grafting material that semiconductor device is installed on the installation base plate.Semiconductor device has: electrode, be electrically connected and cover conductive layer above the raised part by the protuberance that forms from the 1st outstanding resin of above-mentioned electrode with above-mentioned electrode.Grafting material is formed by the 2nd resin.In the installation method of such semiconductor device, above-mentioned the 1st resin uses polyimide resin, and above-mentioned the 2nd resin uses epoxy resin, and the glass transition temperature of above-mentioned the 1st resin is more than 270 ℃ and than the curing temperature height of above-mentioned the 2nd resin.
Installation method according to semiconductor device of the present invention, because the curing temperature of the 2nd resin of formation grafting material is lower than the glass transition temperature of the 1st resin that forms protuberance, so can be lower than under the glass transition temperature of the 1st resin, the heating and pressurizing when carrying out the semiconductor device installation is handled.Thus, the 1st resin that forms protuberance can keep high spring rate semiconductor device being installed under the temperature of installation base plate.Therefore, can prevent that the protuberance that is formed by the 1st resin from producing when mounted greater than the distortion that requires, and breaks thereby can suppress conductive layer.That is, can seek to improve the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate.
In the installation method of this semiconductor device, the section of raised part forms the semicircle shape shape.According to the installation method of this semiconductor device, because the section of protuberance forms the semicircle shape shape, so the heating and pressurizing when installing is handled, the load of pressurization is concentrated in the apex of protuberance.Thus, under the temperature of installing, keep the high state of dimension, because the load of pressurization is concentrated the apex that is applied to protuberance, so also can make the resin distortion of apex even form the spring rate of the 1st resin of protuberance.Therefore, owing to the area that is in contact with one another between electrode that can increase semiconductor device and the electrode on the installation base plate, so can seek to improve more effectively the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate.
In the installation method of this semiconductor device, the glass transition temperature of above-mentioned the 1st resin is more than 270 ℃.According to the installation method of this semiconductor device, be more than 270 ℃ owing to form the glass transition temperature of the 1st resin of protuberance, so the curing temperature that forms the 2nd resin of grafting material can be made as below 270 ℃.Thus, can use curing temperature is that general grafting material more than 250 ℃ is as grafting material.Therefore, productivity ratio can be do not reduced, and the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate can be sought to improve.
In the installation method of this semiconductor device, used phenolic resin or polyimide resin as above-mentioned the 1st resin.According to the installation method of this semiconductor device, owing to used high phenolic resin of glass transition temperature or polyimide resin as the 1st resin that forms protuberance, so even under the temperature that grafting material solidifies, the 1st resin also can be kept high spring rate.Thus, protuberance produces the distortion greater than needs in the time of can preventing to install, and breaks thereby can suppress conductive layer.Therefore, can seek to improve the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate.
In the installation method of this semiconductor device, used epoxy resin as above-mentioned the 2nd resin.Installation method according to this semiconductor device, owing to used the low epoxy resin of curing temperature as the 2nd resin that forms grafting material, so the spring rate that forms the 1st resin of protuberance can reduce when mounted, make protuberance can not produce big distortion, thereby grafting material is solidified.Therefore, can seek to improve the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate.
In the installation method of this semiconductor device, be provided with a plurality of above-mentioned electrodes, and form raised part in the mode that strides across the above-mentioned a plurality of electrodes that adjoin each other, corresponding each above-mentioned electrode covers above-mentioned conductive layer on raised part, makes above-mentioned each conductive layer and corresponding above-mentioned electrode electrical connection.
According to the installation method of this semiconductor device, do not need relative each electrode independently to form protuberance, thereby can seek to shorten manufacturing time, and can seek to improve the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate.
In the installation method of this semiconductor device, above-mentioned grafting material is non-conductive bonding material.According to the installation method of this semiconductor device, can not use the grafting material that comprises conductive particle, and be to use non-conductive cheaply grafting material, semiconductor device is installed on the installation base plate.Therefore, can not reduce productivity ratio, and the electrode of semiconductor device and the electrode of installation base plate can be electrically connected, thereby can seek to improve connection reliability.
And, the invention provides and a kind of semiconductor device is installed to method on the installation base plate.In this installation method, in having the semiconductor device of electrode, form from the outstanding protuberance of above-mentioned electrode by the 1st resin.Form the conductive layer that is electrically connected and covers protuberance with electrode.The grafting material that preparation forms with the 2nd resin with curing temperature lower than the glass transition temperature of the 1st resin.Under the state that grafting material is configured between semiconductor device and the installation base plate, grafting material, semiconductor device and installation base plate are implemented heat treated.
In the mounting structure of this semiconductor device, semiconductor device is by implementing the heating and pressurizing processing and utilizing grafting material to be installed on the installation base plate.Semiconductor device has: electrode, by the protuberance that forms from the 1st outstanding resin of above-mentioned electrode, with above-mentioned electrode be electrically connected and cover raised part above conductive layer.Grafting material is formed by the 2nd resin.In the mounting structure of such semiconductor device, the glass transition temperature of above-mentioned the 1st resin is than the curing temperature height of above-mentioned the 2nd resin.
According to the mounting structure of semiconductor device of the present invention, the heating and pressurizing in the time of can installing below the glass transition temperature of the 1st resin is handled.Thus, the 1st resin of formation protuberance can keep high spring rate when being installed to semiconductor on the substrate.That is, can prevent that the protuberance that is formed by the 1st resin from producing the distortion greater than needs when mounted, breaks thereby can suppress conductive layer.Therefore, can seek to improve the electrode of semiconductor device and the connection reliability between the electrode on the installation base plate.
Description of drawings
Fig. 1 (a) is the summary pie graph of the semiconductor device of an embodiment of the invention.Fig. 1 (b) is the A-A line cutaway view of the semiconductor device of Fig. 1 (a).Fig. 1 (c) is the B-B line cutaway view of the semiconductor device of Fig. 1 (a).
Fig. 2 (a)～Fig. 2 (d) is the cutaway view of manufacture method that is used for the semiconductor device of key diagram 1.
Fig. 3 (a)～Fig. 3 (c) is the cutaway view of manufacture method that is used to go on to say the semiconductor device of Fig. 1.
Fig. 4 (a)～Fig. 4 (c) is the cutaway view of manufacture method that is used to go on to say the semiconductor device of Fig. 1.
Fig. 5 has enlarged the major part cutaway view that the semiconductor device COG of Fig. 1 (a) is installed on the part on the wiring substrate.
Fig. 6 (a) and Fig. 6 (b) are used to illustrate that the semiconductor device with Fig. 1 is installed to the cutaway view of wiring substrate.
Fig. 7 is illustrated under the installation temperature and pressurized conditions of the installation method shown in Fig. 6 (b), and conductive layer has or not the key diagram of broken string.
Fig. 8 (a) is the vertical view of the semiconductor device of expression other examples of the present invention.Fig. 8 (b) is the A-A cutaway view of the semiconductor device of Fig. 8 (a).
Among the figure: the 1-semiconductor device; The 2-semiconductor substrate; The 3-electrode; The 4-diaphragm; 5-is as the projection body of protuberance; The 6-conductive layer; The 8-projected electrode; The 9-mask; The 10-ultraviolet ray; The 11-infrared ray; 20-is as the wiring substrate of installation base plate; The 22-terminal electrode; The 25-grafting material.
Embodiment
Below, will invent an execution mode of specializing according to description of drawings.
At first, semiconductor device 1 of the present invention is described.Fig. 1 (a) is the major part vertical view of the semiconductor device 1 of liquid crystal indicator.And Fig. 1 (b) is the A-A line cutaway view among Fig. 1 (a), and Fig. 1 (c) is the B-B line cutaway view among Fig. 1 (a).
Shown in Fig. 1 (a)～Fig. 1 (c), in the semiconductor device 1, on semiconductor substrate 2, be formed with a plurality of electrodes 3.Each electrode 3 is the electrodes that are used to carry out the electric signal input and output, comprises electrode pad 3a and the distribution 3b that is connected with this electrode pad 3a.In the present embodiment, a plurality of electrodes 3 are formed near the ora terminalis of semiconductor substrate 2 with the spacing of stipulating, and the material of each electrode 3 is an aluminium.
And these electrode 3 protected films 4 cover.The electrode pad 3a of the part of each electrode 3 is passed in the peristome 4a that forms on the diaphragm 4 and exposes to the outside in corresponding respectively mode.In the present embodiment, diaphragm 4 is formed by the dielectric film of silica.
Then, shown in Fig. 1 (a)～Fig. 1 (c), above the diaphragm 4 on being formed at semiconductor substrate 2, be respectively formed on the electrode 3 as approximate hemispheric a plurality of projection bodies 5 of protuberance.The apex of projection body 5 be higher than electrode 3 above.These projection bodies 5 are to be configured with the roughly the same spacing of electrode 3.In the present embodiment, projection body 5 is formed by photoresist.In this photoresist, use acrylic resin.
And then shown in Fig. 1 (c), on diaphragm 4, the mode with the group that covers projection body 5 and electrode 3 respectively is formed with a plurality of conductive layers 6.Each conductive layer 6 passes the 4a of corresponding opening portion, is electrically connected with the electrode pad 3a of corresponding electrode 3.Like this, the conductive layer 6 that is formed with the top integral body that covers corresponding projection body 5 by projection body 5 constitutes projected electrode 8.In the present embodiment, these conductive layers 6 are formed by gold, are formed by pattern about equally with the bed-plate dimension (R) of projection body 5.As mentioned above, semiconductor device 1 has a plurality of projected electrodes 8 that are electrically connected with electrode 3 on semiconductor substrate 2.
Then, according to Fig. 2～Fig. 4, the manufacture method of semiconductor device 1 of the present invention is described.Fig. 2～Fig. 4 is a cutaway view of representing the manufacture method of semiconductor device 1 of the present invention in order, that is, be with Fig. 1 (a) in the corresponding cutaway view of B-B line cutaway view.
At first, shown in Fig. 2 (a), utilize the assigned position of aluminium on semiconductor substrate 2 to form electrode 3.And then, come coated electrode 3 (distribution 3b) with diaphragm 4 with peristome 4a that the electrode pad 3a that makes electrode 3 exposes.Specifically, film forming silicon oxide layer on the semiconductor substrate 2 that comprises electrode 3 at first.Then, by spin-coating method, infusion process, spraying process etc., on silicon oxide layer, form not shown resist layer.Then, use the mask that forms predetermined pattern, on resist layer, implement exposure-processed and development treatment (photoetching treatment).Afterwards, the corrosion-resisting pattern that such pattern is formed the regulation shape carries out the etching of the silicon oxide layer of above-mentioned film forming as mask.By this etch processes, form diaphragm 4 with peristome 4a that the electrode pad 3a that makes electrode 3 exposes.Then, after forming opening 4a, use stripper etc. is removed above-mentioned corrosion-resisting pattern.
Then, shown in Fig. 2 (b), on diaphragm 4, smear the resin that is used to form projection body 5, form resin bed 5a promptly as the acrylic resin that can become the photoresist of eurymeric resist, and by the acrylic resin that prebake is smeared.In the present embodiment, the light curing agent (ultraviolet curing agent) that makes an addition to acrylic resin is adjusted to the addition of the degree that the acrylic resin behind the photocuring (ultraviolet curing) can fuse once more by heating.
Then, shown in Fig. 2 (c), on resin bed 5a, mask 9 is positioned at assigned position and is configured.In the present embodiment, mask 9 for example is made of the glass plate that forms photomasks such as chromium, has the peristome 9a of the circle corresponding with the flat shape of the approximate hemispheric projection body 5 that should form.And the location of mask 9 is that the mode that the peristome 9a with mask 9 is positioned at formation place of projection body 5 is carried out.
Then, ultraviolet ray 10 is radiated on the mask 9, makes the resin bed 5a exposure of in peristome 9a, exposing by not shown ultra-violet lamp.Specifically,, shine the ultraviolet ray 10 of standard exposure amount, the part of the resin bed 5a that exposes in peristome 9a is carried out ultraviolet curing according to material and the thickness of resin bed 5a.Develop and remove unexposed portion (not carrying out the part of the resin bed 5a of ultraviolet curing) beyond the part of the resin bed 5a that in peristome 9a, exposes by development treatment.Its result is shown in Fig. 2 (d), and obtaining top by resin bed 5a is the projection body 5b of the cylindrical shape on plane.
Then, shown in Fig. 3 (a), by not shown infrared lamp infrared ray 11 is radiated on the above-mentioned projection body 5b, 5b heats to the projection body.Specifically, by to by the projection body 5b irradiation infrared ray 11 that is constituted by the acrylic resin of ultraviolet curing, this acrylic resin is heated to fusion.At this moment, this acrylic resin is cured by the effect of the ultraviolet curing agent of being added, and on the other hand, as mentioned above, by having adjusted the addition of ultraviolet curing agent, makes it can not reach highdensity cross-linked state.Therefore, the acrylic resin of formation projection body 5b is heated fusion by infrared ray 11.Thus, because on the acrylic resin of fusion, produce surface tension, so the upper shape of the projection body 5b on plane is deformed into smooth curved surface.Consequently the projection body 5b of cylindrical shape becomes the projection body 5 (with reference to Fig. 3 (b)) of approximate semi-spherical shape.
Then; shown in Fig. 3 (c),, utilize the splash method in the part (electrode pad 3a) of the electrode 3 that comprises the peristome 4a that exposes diaphragm 4 and the surface integral body of the semiconductor substrate 2 above the projection body 5; by the electric conducting material that metal constitutes, form conductive material layer 6a by film forming.In the present embodiment, use gold as electric conducting material, the bed-plate dimension R of conductive material layer 6a and projection body 5 is formed by pattern about equally.
Then, on electric conducting material 6a whole smears resist by spin-coating method, infusion process, spraying process etc., forms resist film.Then, flat shape (plane pattern) corresponding mask of use and conductive material layer 6a is implemented exposure-processed and development treatment to resist layer, and pattern forms the shape of regulation.Thus, shown in Fig. 4 (a), form the corrosion-resisting pattern 15 corresponding with the pattern form of conductive layer 6.
And then, the part of removing not the conductive material layer 6a that covers by corrosion-resisting pattern 15 by etching.Thus, shown in Fig. 4 (b), come on the covered with protective film 4 and the mode of the top integral body of projection body 5, form the conductive layer 6 that is electrically connected with electrode 3 to comprise peristome 4a.Shown in Fig. 4 (c), use stripper etc. then, remove corrosion-resisting pattern 15.Its result forms projected electrode 8 for the conductive layer 6 that the top integral body by projection body 5 and covering projection body 5 forms.By above way, can be not by about ultraviolet 10 conditions of exposures such as grade, obtain being formed with the semiconductor device 1 of the projection body 5 of approximate semi-spherical shape.
Above-mentioned execution mode has following advantage.
(1) in the present embodiment, by making acrylic resin fusion formation projection body 5.That is,, on the acrylic resin of this fusion, produce surface tension, thereby form the projection body 5 that section is the approximate semi-spherical shape of semicircle shape by making the acrylic resin fusion.Therefore, because can be by the shape control of ultraviolet ray 10 conditions of exposure left and right sides projection body 5, so, can seek to improve the productivity ratio of semiconductor device 1.
(2) in the present embodiment, use acrylic resin to form projection body 5 as photosensitive resin.That is, make acrylic resin carry out ultraviolet curing, thereby be the cylindrical shape projection body 5b on plane above having formed by ultraviolet exposure.Therefore, by fusion projection body 5b, can easily form the projection body 5 of approximate semi-spherical shape.
(3), heat and fuse acrylic resin by infrared ray 11 according to present embodiment.Owing on the acrylic resin of fusion, produce surface tension, form the projection body 5 of approximate semi-spherical shape.Therefore, owing to not formed projection body 5 about the conditions of exposure of ultraviolet ray 10, so can seek to improve the productivity ratio of semiconductor device 1 effectively.
Then, according to Fig. 5～Fig. 7, illustrate that on as the wiring substrate 20 of installation base plate COG installs the method and the mounting structure of the semiconductor device 1 of above-mentioned formation.
In the above description, formed projection body 5 by acrylic resin as photosensitive insulating resin.Form the situation of projection body 5 by photosensitive insulating resin, compare with situation about forming and to be suppressed to the original projection body 5 that forms by electroconductive resin.
But, be not limited to acrylic resin, also can form projection body 5 by phenolic resin, polyimide resin or epoxy resin etc.Below, the situation that is formed projection body 5 by phenolic resin is described.Phenolic resin is equivalent near 1st resin of glass transition temperature 300 ℃.
Fig. 5 is the cutaway view that has enlarged above-mentioned semiconductor device 1COG being installed to as the part on the wiring substrate 20 of installation base plate.As shown in Figure 5, on wiring substrate 20, be formed with terminal electrode 22, on terminal electrode 22, be connected with projected electrode 8.Terminal electrode 22 is corresponding with the configuration of projected electrode 8 on being formed on semiconductor device 1 and form.Specifically, the method as the projected electrode 8 with semiconductor device 1 is connected with the terminal electrode 22 of wiring substrate 20 adopts NCP (Non Conductive Paste) mode.Therefore, by accompanying the grafting material 25 as NCP in the centre, and semiconductor device 1 is installed on wiring substrate 20, the state that projected electrode 8 and terminal electrode 22 are kept mutual electrical connection is fixed.
Then, according to Fig. 6 (a)～Fig. 6 (b), describe for the method that semiconductor device 1 is installed on the wiring substrate 20.
Shown in Fig. 6 (a), be used for semiconductor device 1 is installed to grafting material 25 on the wiring substrate 20 smearing on the wiring substrate 20.In the present embodiment, grafting material 25 uses near the epoxy resin of curing temperature 270 ℃.Shown in Fig. 6 (b), the terminal electrode 22 of the projected electrode 8 relative wiring substrates 20 of semiconductor device 1 is positioned, engage heating and pressurizing semiconductor substrate 2 and wiring substrate 20 by flip-over type.Thus, semiconductor device 1 accompanies grafting material 25, as shown in Figure 5 in the centre, be installed on the wiring substrate 20.
Fig. 7 is when temperature is installed is 210 ℃ or 270 ℃, and pressurized conditions is made as 5kgf/cm
2(0.49MPa) or 10kgf/cm
2(0.98MPa) come semiconductor substrate 2 and distribution 20 are carried out under the situation of heating and pressurizing, the conductive layer 6 that expression is contained in projected electrode 8 has or not the figure of broken string.In the present embodiment, corresponding as the resin that constitutes projection body 5 with above-mentioned installation temperature and pressurized conditions, use respectively the glass transition temperature near acrylic resin 220 ℃ and glass transition temperature near the phenolic resin 300 ℃.
When to use the glass transition temperature be 220 ℃ resin (acrylic resin), is 210 ℃ even temperature is installed at the resin that forms projection body 5, also can be because of near the glass transition temperature and make that spring rate begins to reduce.Thus, being not only temperature is installed is 270 ℃ situation, is 210 ℃ even work as the installation temperature, with 10kgf/cm
2When semiconductor device 1 was pressurizeed, the resin of projection body 5 also can produce big distortion.Its result, thus the conductive layer 6 that is contained in projected electrode 8 is not followed the large deformation of projection body 5 and is broken.Therefore, must be with 5kgf/cm
2Low load semiconductor device 1 is installed on the wiring substrate 20.
On the other hand, shown in present embodiment, at the resin that forms projection body 5 when to use the glass transition temperature be resin (phenolic resin) more than 270 ℃,, keep projection body 5 and also keep high spring rate even the situation that temperature is 210 ℃ and 270 ℃ promptly is installed with same mounting condition.Therefore, big distortion can not take place in the resin of projection body 5, thereby conductive layer 6 does not break.
Specifically, temperature will be installed be set at 270 ℃, and 22 pairs of projected electrodes 8 of comparative electrode terminal position, engage heating and pressurizing semiconductor substrate 2 and wiring substrate 20 by flip-over type.At this moment, be about 300 ℃ owing to form its glass transition temperature of phenolic resin of projection body 5,, keeps the spring rate of phenolic resin the state of high resiliency rate so can not reducing.Therefore, engage by flip-over type relatively and pressurize, when the grafting material 25 as NCP solidifies, that is, even temperature is installed when becoming 270 ℃, the projection body 5 that is made of phenolic resin can not produce the distortion greater than needs yet.That is to say, owing to make load concentration to exerting pressure near the apex that forms approximate hemispheric projection body 5, so near the phenolic resin distortion the apex is only arranged.Therefore, conductive layer 6 does not break, thereby can guarantee the electrical connection between the terminal electrode 22 of the projected electrode 8 of semiconductor device 1 and wiring substrate 20.Therefore, even be in 210 ℃ and 270 ℃ any one in that temperature is installed, and pressurized conditions is 5kgf/cm
2And 10kgf/cm
2In under any one the situation, also can keep the high state of spring rate of the phenolic resin that forms projection body 5 in the same old way, make projection body 5 that big distortion not take place.That is,, can not break so constitute the conductive layer 6 of projected electrode 8 because the shape of projected electrode 8 does not have big variation.
By the grafting material that is made of epoxy resin 25 is solidified, fix and keep connection status between above-mentioned projected electrode 8 and the terminal electrode 22.By above-mentioned operation, can keep the connection reliability between the terminal electrode 22 of the projected electrode 8 of semiconductor device 1 and wiring substrate 20, semiconductor device 1 can be installed on the wiring substrate 20 simultaneously.
Above-mentioned execution mode also has the following advantages.
(11) in the present embodiment, use the glass transition temperature resin higher to form projection body 5 than the curing temperature of grafting material 25.That is to say that the resin use curing temperature that constitutes grafting material 25 is 250 ℃ a epoxy resin, the resin use glass transition temperature that forms projection body 5 is near the phenolic resin 300 ℃.
Thus, the setting temperature in the time of semiconductor device 1 can being installed is made as near following 270 ℃ of the glass transition temperature (300 ℃) of the phenolic resin that forms projection body 5.That is, be made as 270 ℃, the spring rate of projection body 5 can be maintained high spring rate when mounted, semiconductor device 1 is installed on the wiring substrate 20 by temperature will be installed.Therefore, projection body 5 does not produce the distortion greater than needs when mounted, can suppress to be contained in the broken string of the conductive layer 6 of projected electrode 8.Therefore, can seek to improve connection reliability between the terminal electrode 22 of the projected electrode 8 of semiconductor device 1 and wiring substrate 20.
(12) according to present embodiment, it is approximate hemispherical that the shape of projection body 5 is.Thus, the heating and pressurizing when installing by semiconductor device 1 can make pressure concentrate and be applied near the apex of projection body 5.That is, keep high spring rate even constitute the resin integral body of projection body 5 when semiconductor device 1 is installed, load also can be concentrated near the apex that is applied to projection body 5, thereby can only make near the resin distortion of apex of projection body 5.Therefore, because the contact area between projected electrode 8 and the terminal electrode 22 is increased, so can seek to improve connection reliability between the terminal electrode 22 of the projected electrode 8 of semiconductor device 1 and wiring substrate 20 more effectively.
(13) according to present embodiment, the resin that forms projection body 5 has used phenolic resin.Because the glass transition temperature of phenolic resin is near 300 ℃, so even be that the phenolic resin that forms projection body 5 also can be kept high spring rate under grafting material 25 that the epoxy resin about 270 ℃ the constitutes temperature of solidifying by curing temperature.That is, can prevent the distortion that projection body when mounted 5 takes place greater than needs, thereby the conductive layer 6 that can suppress to constitute projected electrode 8 breaks.Therefore, can seek to improve connection reliability between the terminal electrode 22 of the projected electrode 8 of semiconductor device 1 and wiring substrate 20.
(14) according to present embodiment, grafting material 25 is the NCP (Non Conductive Paste) that are made of epoxy resin.Thus, do not use the grafting material 25 that comprises conductive particle, and use the grafting material 25 of cheap non-conductive grafting material, semiconductor device 1 reliably can be installed on the wiring substrate 20.Therefore, can not reduce productivity ratio, and the projected electrode 8 of semiconductor device 1 and the terminal electrode 22 of wiring substrate 20 are electrically connected, thereby can seek to improve the reliability of connection.
In addition, present embodiment also can be carried out following change.
In Fig. 5～Fig. 7 of above-mentioned execution mode, using the glass transition temperature is that 300 ℃ phenolic resin is as the resin that forms projection body 5.But the resin of formation projection body 5 is so long as the glass transition temperature is also can use other resin more than 270 ℃.In this case, also can to use curing temperature be the good grafting material 25 of productivity ratio more than 250 ℃ to bond material 25.Therefore, productivity ratio is reduced, and can seek to improve the projected electrode 8 of semiconductor device 1 and the connection reliability between the terminal electrode 22 on the wiring substrate 20.
In Fig. 5～Fig. 7 of above-mentioned execution mode, the resin that forms projection body 5 has used phenolic resin.It is substituted, also can use the high polyimide resin of glass transition temperature as the resin that forms projection body 5.Thus, the resin that forms projection body 5 also can be kept high spring rate when mounted.That is, can prevent the distortion of projection body 5 generations when mounted, break thereby can suppress conductive layer 6 greater than needs.Therefore, can seek to improve the projected electrode 8 of semiconductor device 1 and the connection reliability between the terminal electrode 22 on the wiring substrate 20.
In the above-described embodiment, the shape of the peristome 9a of mask 9 is set to and the corresponding circle of flat shape that is similar to hemispheric projection body 5.It is substituted, and then the shape of peristome 9a need not special qualification, for example also can be square.Its result, the exposure-processed by ultraviolet 10 forms rectangular-shaped projection body 5b.In this case, also can be by fusion projection body 5b, and utilize surface tension to form to have the projection body 5 of semicircle shape section shape.
In the above-described embodiment, by irradiation ultraviolet radiation 10 on mask 9, can make a part of ultraviolet-crosslinkable of the resin bed 5a that in peristome 9a, exposes form projection body 5b.It is substituted, can also make the crosslinked projection body 5b that forms of a part of electron ray of the resin bed 5a that in peristome 9a, exposes by on mask 9, shining electron ray.
In the above-described embodiment, formed the projection body 5 of approximate semi-spherical shape by ultraviolet ray 11 fusion projection body 5b.It is substituted, also can be by heating projection body 5b by radiant heat based on other means such as laser.Especially because laser can carry out localized heating, so can easily heat and fuse projection body 5b.Therefore, can further seek to improve the productivity ratio of semiconductor device 1.
In the above-described embodiment, be formed on semiconductor substrate 2 on each electrode 3 corresponding and formed projection body 5.It is substituted, also can form projection body 5 in the mode of crossing over a plurality of electrodes 3 as shown in Figure 8, and form the conductive layer 6 of corresponding each electrode 3 above the projection body 5, make that becoming one group electrode 3 and conductive layer 6 is electrically connected mutually at this.Thus, need not on a plurality of electrodes 3, to form projection body 5 respectively, can seek further to shorten the manufacturing time of semiconductor device 1 and promptly boost productivity.Can also seek to improve the projected electrode 8 of semiconductor device 1 and the connection reliability between the terminal electrode 22 on the wiring substrate 20.
In the above-described embodiment, diaphragm 4 is formed by silica.It is substituted, also can form diaphragm 4 by silicon nitride, polyimide resin etc.
In the above-described embodiment, the thickness of unqualified diaphragm 4 for example forms about 1 μ m and gets final product.
In the above-described embodiment, formed conductive layer 6 with the rectangular shape pattern.It is substituted, need not to limit especially the shape of conductive layer 6, for example also can form square shape by pattern.
In the present embodiment, conductive layer 6 is formed by gold.It is substituted, and for example also can using, other metal such as copper, nickel, titanium, aluminium forms conductive layer 6.
Claims (6)
1. the installation method of a semiconductor device, by imposing the heating and pressurizing processing and utilizing grafting material (25) that semiconductor device (1) is installed on the installation base plate (20), described semiconductor device (1) has: electrode (3), from described electrode (3) protuberance (5) outstanding and that form by the 1st resin, with described electrode (3) be electrically connected and cover described protuberance (5) above conductive layer (6), described grafting material (25) is formed by the 2nd resin
Described the 1st resin (5) uses polyimide resin,
Described the 2nd resin (25) uses epoxy resin,
The glass transition temperature of described the 1st resin (5) is more than 270 ℃ and than the curing temperature height of described the 2nd resin (25).
2. the installation method of semiconductor device according to claim 1 is characterized in that, the section of described protuberance (5) forms the shape of semicircle shape.
3. the installation method of semiconductor device according to claim 1 and 2, it is characterized in that, be provided with a plurality of described electrodes (3), and form described protuberance (5) in the mode that strides across the described a plurality of electrodes (3) that adjoin each other, corresponding each described electrode (3) forms described conductive layer (6) on described protuberance (5), and described each conductive layer (6) and corresponding described electrode (3) are electrically connected.
4. the installation method of semiconductor device according to claim 1 and 2 is characterized in that, described grafting material (25) is non-conductive bonding material.
5. the installation method of a semiconductor device is installed to semiconductor device (1) on the installation base plate (20), and this method has:
On the semiconductor device with electrode (3) (1), form from the step of the outstanding protuberance (5) of described electrode (3) by the 1st resin;
Form the step that is electrically connected and covers the conductive layer (6) of described protuberance (5) with described electrode (3);
Preparation has the step than low curing temperature of the glass transition temperature of described the 1st resin (5) and the grafting material (25) that formed by the 2nd resin; With
Under the state that described grafting material (25) is configured between described semiconductor device (1) and the described installation base plate (20), described grafting material (25), described semiconductor device (1) and described installation base plate (20) are implemented the step that heating and pressurizing is handled;
Described the 1st resin (5) uses polyimide resin,
Described the 2nd resin (25) uses epoxy resin,
The glass transition temperature of described the 1st resin (5) is more than 270 ℃ and than the curing temperature height of described the 2nd resin (25).
6. the mounting structure of a semiconductor device, by implementing the heating and pressurizing processing and utilizing grafting material (25) that semiconductor device (1) is installed on the installation base plate (20), described semiconductor device (1) has: electrode (3), from described electrode (3) outstanding and protuberance (5) that form by the 1st resin and with described electrode (3) be electrically connected and cover described protuberance (5) above conductive layer (6), described grafting material (25) is formed by the 2nd resin
Described the 1st resin (5) uses polyimide resin,
Described the 2nd resin (25) uses epoxy resin,
The glass transition temperature of described the 1st resin (5) is more than 270 ℃ and than the curing temperature height of described the 2nd resin (25).
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005084584 | 2005-03-23 | ||
| JP2005084584 | 2005-03-23 | ||
| JP2005-084584 | 2005-03-23 | ||
| JP2005084583 | 2005-03-23 | ||
| JP2005084583 | 2005-03-23 | ||
| JP2005-084583 | 2005-03-23 | ||
| JP2005344647 | 2005-11-29 | ||
| JP2005-344647 | 2005-11-29 | ||
| JP2005344647A JP4142041B2 (en) | 2005-03-23 | 2005-11-29 | Manufacturing method of semiconductor device |
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| CN 200610068103 Division CN100595890C (en) | 2005-03-23 | 2006-03-21 | Method for manufacturing semiconductor device |
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| CN101562143A CN101562143A (en) | 2009-10-21 |
| CN101562143B true CN101562143B (en) | 2011-10-05 |
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| CN 200610068103 Expired - Fee Related CN100595890C (en) | 2005-03-23 | 2006-03-21 | Method for manufacturing semiconductor device |
| CN 200910142031 Expired - Fee Related CN101562143B (en) | 2005-03-23 | 2006-03-21 | Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device |
| CN 200910142033 Expired - Fee Related CN101562144B (en) | 2005-03-23 | 2006-03-21 | Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device |
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| JP4356683B2 (en) * | 2005-01-25 | 2009-11-04 | セイコーエプソン株式会社 | Device mounting structure and device mounting method, droplet discharge head and connector, and semiconductor device |
| CN100595890C (en) * | 2005-03-23 | 2010-03-24 | 精工爱普生株式会社 | Method for manufacturing semiconductor device |
| JP5495982B2 (en) * | 2010-06-29 | 2014-05-21 | 富士フイルム株式会社 | Method for producing conductive film and light emitting device |
| JP6916525B2 (en) * | 2018-02-06 | 2021-08-11 | 株式会社ブイ・テクノロジー | LED display manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5783465A (en) * | 1997-04-03 | 1998-07-21 | Lucent Technologies Inc. | Compliant bump technology |
| CN101562144A (en) * | 2005-03-23 | 2009-10-21 | 精工爱普生株式会社 | Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5359768A (en) * | 1992-07-30 | 1994-11-01 | Intel Corporation | Method for mounting very small integrated circuit package on PCB |
| DE10014300A1 (en) * | 2000-03-23 | 2001-10-04 | Infineon Technologies Ag | Semiconductor component and method for its production |
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2006
- 2006-03-21 CN CN 200610068103 patent/CN100595890C/en not_active Expired - Fee Related
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5783465A (en) * | 1997-04-03 | 1998-07-21 | Lucent Technologies Inc. | Compliant bump technology |
| CN101562144A (en) * | 2005-03-23 | 2009-10-21 | 精工爱普生株式会社 | Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101562144B (en) | 2012-11-21 |
| CN101562144A (en) | 2009-10-21 |
| CN1838383A (en) | 2006-09-27 |
| CN101562143A (en) | 2009-10-21 |
| CN100595890C (en) | 2010-03-24 |
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