CN101552272B - 在具有瞬态抑制二极管的滤波器中实现线性电容的器件及方法 - Google Patents
在具有瞬态抑制二极管的滤波器中实现线性电容的器件及方法 Download PDFInfo
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- CN101552272B CN101552272B CN2008101777182A CN200810177718A CN101552272B CN 101552272 B CN101552272 B CN 101552272B CN 2008101777182 A CN2008101777182 A CN 2008101777182A CN 200810177718 A CN200810177718 A CN 200810177718A CN 101552272 B CN101552272 B CN 101552272B
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- 230000001629 suppression Effects 0.000 title claims abstract description 31
- 230000001052 transient effect Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 238000007667 floating Methods 0.000 claims abstract description 5
- 230000000087 stabilizing effect Effects 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 21
- 239000011810 insulating material Substances 0.000 claims description 20
- 210000000746 body region Anatomy 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 14
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- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 9
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
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- 239000007943 implant Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
SiO2 | 氮化物(Si3N4) | |
介电常数 | 3.9 | 7.5 |
介电强度 | 107 | 107 |
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/080,104 US7863995B2 (en) | 2007-06-16 | 2008-04-01 | Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS |
US12/080,104 | 2008-04-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101552272A CN101552272A (zh) | 2009-10-07 |
CN101552272B true CN101552272B (zh) | 2011-01-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101777182A Active CN101552272B (zh) | 2008-04-01 | 2008-11-12 | 在具有瞬态抑制二极管的滤波器中实现线性电容的器件及方法 |
Country Status (2)
Country | Link |
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CN (1) | CN101552272B (zh) |
TW (1) | TWI379419B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101667817B (zh) * | 2009-10-09 | 2012-12-12 | 华为终端有限公司 | 一种抑制电磁干扰的方法和电磁干扰滤波器 |
CN102333267A (zh) * | 2011-06-29 | 2012-01-25 | 惠州Tcl移动通信有限公司 | 手机及其麦克风电路 |
US20130069154A1 (en) * | 2011-09-20 | 2013-03-21 | Alpha And Omega Semiconductor Incorporated | Semiconductor chip integrating high and low voltage devices |
US10363425B2 (en) * | 2015-06-01 | 2019-07-30 | Avx Corporation | Discrete cofired feedthrough filter for medical implanted devices |
CN106252226A (zh) * | 2016-10-17 | 2016-12-21 | 上海先进半导体制造股份有限公司 | Tvs管的制作方法 |
WO2019104546A1 (en) * | 2017-11-29 | 2019-06-06 | Texas Instruments Incorporated | Single capacitor functioning as an rc filter |
TWI726515B (zh) | 2019-12-04 | 2021-05-01 | 台灣茂矽電子股份有限公司 | 瞬態電壓抑制二極體結構及其製造方法 |
-
2008
- 2008-11-12 CN CN2008101777182A patent/CN101552272B/zh active Active
-
2009
- 2009-01-16 TW TW98101483A patent/TWI379419B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200943554A (en) | 2009-10-16 |
CN101552272A (zh) | 2009-10-07 |
TWI379419B (en) | 2012-12-11 |
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Effective date of registration: 20160909 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: Bermuda Hamilton No. 22 Vitoria street Canon hospital Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A device for realizing linear capacity in a filter provided with a transient suppression diode and a method Effective date of registration: 20191210 Granted publication date: 20110119 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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Granted publication date: 20110119 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |