CN101552224B

CN101552224B - Solving method of micro-through-hole tungsten loss

Info

Publication number: CN101552224B
Application number: CN2008100897261A
Authority: CN
Inventors: 宋朝刚; 钱晓春; 孔亮; 周浩
Original assignee: Hejian Technology Suzhou Co Ltd
Current assignee: Hejian Technology Suzhou Co Ltd
Priority date: 2008-04-03
Filing date: 2008-04-03
Publication date: 2010-11-10
Anticipated expiration: 2028-04-03
Also published as: CN101552224A

Abstract

The invention provides a solving method of micro-through-hole tungsten loss. Tungsten inside microthrough holes can be reacted during sequent etching or cleaning due to movable area deviation when metal is etched in the prior art so as to influence the electric property of metal and produce defective products. The solving method is as follows: a dielectric medium layer is firstly deposited after the metal is etched, then the dielectric medium layer is etched back, partitions are left on the lateral walls of meal patterns due to spacer effect when the dielectric medium layer is etched back, andthe partitions can protect the tungsten inside the micro through holes not being reacted. The solving method can effectively solve the problem of the tungsten loss inside the micro through holes due to the movable area deviation, thereby lowering the defective rate.

Description

A kind of solution of micro-through-hole tungsten loss

Technical field

Produce the solution of etching defect when the present invention relates to a kind of metal etch, particularly relate to a kind of solution of micro-through-hole tungsten loss.

Background technology

Conventional metals adds traditional approach such as use car man-hour, dash, but owing to exist the blastic deformation meeting to cause the evenness of metal bad; Particularly when carrying out Precision Machining (the sightless trickle part of for example large-area micro-strainer or naked eyes), conventional method can't realize.Metal (metal) etching is a kind of new technology, can realize Precision Machining.Particularly at semicon industry, more accurate manufacturing process has been brought technical leap.

Existing metal etching process is roughly the same, i.e. depositing metal layers in substrate at first, on metal level, make photoresistance then and carry out the gold-tinted processing procedure (light by yellow with design transfer to photosensitive material, be partly dissolved by illumination by solvent again or keep to form pattern), then metal etch is fallen.In above-mentioned steps, when etching, can occur because behaviour area (active area) is offset (Shift), its structure is positioned at the metal level 1 on the barrier layer 4 and fails to block micro through hole 2 (Via) as shown in Figure 1.Can in subsequent etch process or cleaning process, the tungsten in the micro through hole that comes out 3 (w) be reacted away like this, cause the phenomenon of micro through hole open (Via Open), as shown in Figures 2 and 3.Simultaneously, shown in Figure 4 and 5 have two-layer micro through hole the time, if the situation that as shown in Figure 1 metal level 1 fails to block micro through hole 2 occurs, when the micro through hole of etching upper strata, can cause the tungsten loss in lower floor's micro through hole.So either way can cause the electrical inefficacy of metal, cause defect ware.

Summary of the invention

At above-mentioned defective of the prior art and problem; the objective of the invention is to propose a kind of solution of micro-through-hole tungsten loss; when metal etch, protect micro through hole by spacer; make that the tungsten in the micro through hole is unlikely in follow-up etching or the clear process is lost; protect the electrical of metal, reduce the defect ware rate.

In order to achieve the above object, the present invention proposes a kind of solution of micro-through-hole tungsten loss, comprising:

Step 1, by the predetermined pattern etch metal layers;

Step 2, the surface deposition dielectric layer after etching;

The dielectric layer of step 3, etchback step 2 depositions.

Preferred as technique scheme, described step 1 can also be specially: by the barrier layer of predetermined pattern etch metal layers and metal level bottom.

Preferred as technique scheme, described step 1 can be specially: by the predetermined pattern etch metal layers to exposing barrier layer.Like this can be in subsequent step etch barrier again, that is:

Step 4, this barrier layer of etching.

Preferred as technique scheme, the dielectric layer in the described step 2 can be oxide skin(coating).

Preferred as technique scheme, the dielectric layer of described step 2 can also be silicon oxynitride SiON.

The present invention proposes a kind of solution of micro-through-hole tungsten loss.In the prior art since when metal etch the behaviour area skew can cause follow-up etching or when cleaning the tungsten in the micro through hole reacted away.In the method that the present invention proposes, after the metal level etching, deposit a dielectric layer earlier, and then dielectric layer is eat-back.Because the spacer effect can stay spacer at the sidewall of metal pattern, spacer can protect micro through hole that tungsten wherein can not reacted away when eat-backing.The method that the present invention proposes can effectively solve the problem that the behaviour area is offset tungsten loss in the micro through hole that causes, and reduces the defect ware rate.

Description of drawings

Fig. 1 is etched structural representation when skew takes place in the behaviour area in the existing metal etch;

The structural representation of micro-through-hole tungsten loss when Fig. 2 Fig. 1 process subsequent etch or cleaning;

Fig. 3 Fig. 2 practical photograph;

Fig. 4 causes the schematic diagram of lower floor's through hole tungsten loss when being upper strata micro through hole etching;

Fig. 5 is the practical photograph of Fig. 4;

Fig. 6 is the structural representation after the steps A etching in the first preferred embodiment of the invention;

Fig. 7 is the structural representation after the step B dielectric layer deposition in the first preferred embodiment of the invention;

Fig. 8 is the structural representation that leaves spacer after step C eat-backs in the first preferred embodiment of the invention;

Fig. 9 etches away structural representation behind the barrier layer for step D in the first preferred embodiment of the invention;

Figure 10 is the structural representation after the step a etching in the second preferred embodiment of the invention;

Figure 11 is the structural representation after the step b dielectric layer deposition in the second preferred embodiment of the invention;

Figure 12 is the structural representation that leaves spacer after step c eat-backs in the second preferred embodiment of the invention.

Embodiment

The present invention will be further described with reference to the accompanying drawings below.

The solution of a kind of micro-through-hole tungsten loss that first preferred embodiment of the invention proposes comprises:

Steps A, by predetermined pattern etch metal layers 1 to exposing barrier layer 4, as shown in Figure 6;

Step B, the surface deposition dielectric layer 5 after etching, as shown in Figure 7;

The dielectric layer 5 that deposits among step C, the etchback step B; Because the spacer effect as shown in Figure 8, stays spacer 6 at the edge of metal, spacer 6 has blocked micro through hole 2 when eat-backing;

Step D, this barrier layer 4 of etching form structure as shown in Figure 9.

In the above-described embodiments, steps A is a prior art, and the deposition process of the dielectric layer 5 of step B also is a prior art, does not give unnecessary details one by one at this.Among the step C, when etching,, can stay spacer 6 in the etched partial sidewall of steps A owing to there is the spacer effect, like this when step D etching, spacer 6 can block micro through hole 2, and the tungsten 3 in the micro through hole 2 can not lost, and has solved the problem of the tungsten loss in the prior art micro through hole.In above-mentioned first embodiment, be when first step etching, only to etch away metal level as shown in Figure 6, keep the barrier layer of metal level bottom, in step D, just barrier layer is etched away then.Can certainly second embodiment described as follows, in the first step, just constantly fall barrier layer.

In first preferred embodiment, the dielectric layer of step B can be oxide skin(coating).

In first preferred embodiment, the dielectric layer of step B can also be silicon oxynitride SiON.

The solution of a kind of micro-through-hole tungsten loss that proposes in the second preferred embodiment of the invention comprises:

Step a, the barrier layer bottom predetermined pattern etch metal layers and metal level, as shown in figure 10;

Step b, the surface deposition dielectric layer after etching, as shown in figure 11;

The dielectric layer of step c, etchback step 2 depositions, as shown in figure 12.

In the above-described embodiments, step a is a prior art, and the deposition process of the dielectric layer 5 of step b also is a prior art, does not give unnecessary details one by one at this.Among the step c, when etching owing to there is a spacer effect, can stay spacer 6 at the metal level sidewall partly that step a etches away, like this in follow-up etching process, spacer 6 can block micro through hole 2, tungsten 3 in the micro through hole 2 can not lost, solved the problem of the tungsten loss in the prior art micro through hole.

In second preferred embodiment, the dielectric layer of step b can be oxide skin(coating).

In second preferred embodiment, the dielectric layer of step b can also be silicon oxynitride SiON.

In the first and second above-mentioned embodiment, do not keep the barrier layer dual mode when keeping barrier layer and etch metal layers when having adopted etch metal layers respectively, can realize protecting the purpose of micro through hole.

Certainly, adopt above-mentioned optimal technical scheme just for the ease of understanding to illustrating that the utility model carries out, the utility model also can have other embodiment, protection range of the present utility model is not limited to this.Under the situation that does not deviate from the utility model spirit and essence thereof; the person of ordinary skill in the field works as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of claim of the present utility model.

Claims

1. the solution of a micro-through-hole tungsten loss comprises:

Step 1, by the predetermined pattern etch metal layers;

Step 2, the surface deposition dielectric layer after etching;

The dielectric layer of step 3, etchback step 2 depositions owing to there is the spacer effect, stays spacer in the etched partial sidewall of step 1 when eat-backing, when the subsequent step etching, spacer can block micro through hole like this.

2. the solution of micro-through-hole tungsten loss according to claim 1 is characterized in that, described step 1 is specially:

By the predetermined pattern etch metal layers, and the barrier layer of etch metal layers bottom.

3. the solution of micro-through-hole tungsten loss according to claim 1 is characterized in that, described step 1 is specially:

By the predetermined pattern etch metal layers to exposing barrier layer.

4. the solution of micro-through-hole tungsten loss according to claim 3 is characterized in that, described method also comprises:

Step 4, this barrier layer of etching.

5. according to the solution of claim 1 or 2 or 3 or 4 each described a kind of micro-through-hole tungsten loss, its feature is that the dielectric layer in the described step 2 is an oxide skin(coating).

6. according to the solution of claim 1 or 2 or 3 or 4 each described a kind of micro-through-hole tungsten loss, its feature is that the dielectric layer of described step 2 is silicon oxynitride SiON.