CN101551698B - Memory voltage regulating method and computer motherboard - Google Patents
Memory voltage regulating method and computer motherboard Download PDFInfo
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- CN101551698B CN101551698B CN2008101031088A CN200810103108A CN101551698B CN 101551698 B CN101551698 B CN 101551698B CN 2008101031088 A CN2008101031088 A CN 2008101031088A CN 200810103108 A CN200810103108 A CN 200810103108A CN 101551698 B CN101551698 B CN 101551698B
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Abstract
The invention provides a memory voltage regulating method and a computer motherboard. The method comprises the following steps: the standard operating voltage and the standard reference voltage of a memory are obtained and output; when the standard operating voltage of the memory is taken as the input voltage, a plurality of floating operating voltages are produced after the input voltage is regulated and are output; and when the standard reference voltage of the memory is taken as the input voltage, a plurality of floating reference voltages are produced after the input voltage is regulated and are output. When the memory voltage regulating method is used for regulating the voltage of the memory, the standard operating voltage and the standard reference voltage of the memory are respectively adjustable, thereby not needing to change the divider resistance and facilitating the regulation to the voltage of the memory.
Description
Technical field
The present invention relates to computer realm, be meant memory voltage regulating method and computer motherboard especially.
Background technology
In the hardware standard configuration of computing machine, mainboard and internal memory and CPU are most important parts in the computing machine, yet, mainboard, internal memory and CPU are produced by different production firms, want to allow a computing machine stablize and operation efficiently, except CPU being had than the higher requirement, the compatibility issue of mainboard and internal memory also is a problem that can not be ignored, in actual use, also usually run into the incompatible phenomenon that causes computer corruption or blue screen owing to mainboard and internal memory, this brings very big inconvenience to the user.Therefore, computer vendors is before the assembling computing machine, must carry out compatibility test to mainboard and internal memory, because internal memory is directly to be inserted in the memory bank of mainboard, provide power supply by mainboard, internal memory could be worked, and therefore, the compatibility issue of internal memory and mainboard shows that mainly mainboard can make the normal and stable operation of internal memory to operating voltage and the reference voltage that internal memory provided.
Present mainboard is fixed for the operating voltage (VCC_DDR) that internal memory provided, for the reference voltage (VDDR_REF) that internal memory provided is also fixed, and VDDR_REF is VCC_DDR half, as shown in Figure 1, the relation of above-mentioned VDDR_REF and VCC_DDR is made of two divider resistances of mutual series connection, in this case, through test, if mainboard and internal memory is incompatible, can heighten or turn down operating voltage and reference voltage, computer system is normally moved, scheme shown in Figure 1 must be changed divider resistance when regulating operating voltage and reference voltage, and the divider resistance more suitably of burn-oning makes operating voltage and reference voltage obtain to a certain extent adjusting, again test again, this operation too complex makes internal memory operating voltage and reference voltage regulate inconvenience, and does not accomplish high precision fine motion adjusting internal memory supply voltage, and it is inefficient, test job causes the waste in man-hour for a long time, and the people can't be stood.
Therefore, the computer vendors that has is simply directly tested mainboard and internal memory, discovery has incompatible phenomenon, just will eliminate with the incompatible internal memory of mainboard, this internal memory and other mainboard are cooperated test again, attempt to avoid by different fit systems the generation of problem, concerning the batch process of computing machine, this obviously is not a scientific and effective method for computer vendors.
Summary of the invention
Embodiments of the invention provide a kind of memory voltage regulating method and computer motherboard, and the memory voltage that solves the mainboard of computing machine is regulated inconvenient problem.
For solving the problems of the technologies described above, embodiments of the invention provide a kind of memory voltage regulating method, comprise the steps:
Obtain and export the standard operation voltage and the canonical reference voltage of internal memory;
By input control order,, and export described a plurality of unsteady operating voltage to a plurality of unsteady operating voltage of generation after the standard operation voltage-regulation of described internal memory;
By input control order,, and export described a plurality of unsteady reference voltage to a plurality of unsteady reference voltages of generation after the canonical reference voltage-regulation of described internal memory;
With described standard operation voltage and described a plurality of unsteady operating voltage is row/row, with described canonical reference voltage and described a plurality of unsteady reference voltage is row/OK, form a test matrix, pairing a pair of operating voltage of each element in the described test matrix and reference voltage are carried out mainboard and memory compatibility test, form the test result matrix;
In described test result matrix, obtain a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility, and the described operating voltage of obtaining is set to the real work voltage of internal memory, the described reference voltage that obtains is set to the actual reference voltage of internal memory.
Preferably, above-mentioned by input control order, the step that produces a plurality of unsteady operating voltage after the standard operation voltage-regulation of described internal memory is specially:
Pass through input control order: Vo_init+N * Vo_step, to producing a plurality of unsteady operating voltage after the standard operation voltage-regulation of described internal memory; Wherein, described Vo_init is the standard operation voltage of described internal memory, and N is an integer, and Vo_step is that voltage is adjusted step-length;
Above-mentioned by input control order, the step that produces a plurality of unsteady reference voltages after the canonical reference voltage-regulation of described internal memory is specially:
Pass through input control order: Vf_init+K * Vf_step, to producing a plurality of unsteady reference voltages after the canonical reference voltage-regulation of described internal memory; Wherein, described Vf_init is the canonical reference voltage of described internal memory, and K is an integer, and Vf_step is that voltage is adjusted step-length.
Preferably, above-mentioned in described test result matrix, obtain a pair of operating voltage of mainboard and internal memory compatibility and the step of reference voltage and also comprise afterwards:
In the chip that the described a pair of operating voltage of obtaining and reference voltage are kept at described mainboard.
Preferably, above-mentioned described in described test result matrix, obtain a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility, and the described operating voltage of obtaining is set to the real work voltage of internal memory, and the step that the described reference voltage that obtains is set to the actual reference voltage of internal memory is specially:
In described test result matrix, choose m capable * the sub-test result matrix of n row, wherein m, n are the odd number greater than 1;
Judge the element B in the described sub-test result matrix
11, B
1n, B
M1, B
MnWhether Dui Ying a pair of operating voltage and reference voltage are a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility respectively;
If, then with a pair of operating voltage of the symcenter correspondence of described sub-test result matrix and real work voltage and the actual reference voltage that reference voltage is set to internal memory respectively.
Preferably, above-mentioned in described test result matrix, choose m capable * step of the sub-test result matrix of n row is specially:
In described test result matrix, with the standard operation voltage of described internal memory and canonical reference voltage be symcenter choose m capable * the sub-test result matrix of n row.
Preferably, the above-mentioned described operating voltage of obtaining is set to the real work voltage of internal memory, and the step that the described reference voltage that obtains is set to the actual reference voltage of internal memory is specially:
Be set to the real work voltage of internal memory by serial i/o interface on the described mainboard or the described operating voltage of obtaining of parallel input/output interface, the described reference voltage that obtains is set to the actual reference voltage of internal memory.
For solving the problems of the technologies described above, a kind of computer motherboard also is provided, comprising:
The memory voltage output module is used to export the real work voltage and the actual reference voltage of internal memory;
Initialization module is used for the described memory voltage output module of initialization, makes described memory voltage output module export the standard operation voltage and the canonical reference voltage of internal memory respectively;
Memory standard operating voltage adjustment module is used for by input control order, to a plurality of unsteady operating voltage of generation after the standard operation voltage-regulation of described internal memory, and exports described a plurality of unsteady operating voltage;
Memory standard reference voltage adjustment module is used for by input control order, to a plurality of unsteady reference voltages of generation after the canonical reference voltage-regulation of described internal memory, and exports described a plurality of unsteady reference voltage;
The test result matrix forms module, being used for described standard operation voltage and described a plurality of unsteady operating voltage is row/row, with described canonical reference voltage and described a plurality of unsteady reference voltage is row/OK, form a test matrix, pairing a pair of operating voltage of each element in the described test matrix and reference voltage are carried out mainboard and memory compatibility test, form the test result matrix;
Acquisition module is used for obtaining a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility at described test result matrix, and described operating voltage of obtaining and reference voltage is transferred to described memory voltage output module;
Described memory voltage output module described operating voltage of obtaining of output and reference voltage.
Preferably, aforementioned calculation machine mainboard also comprises:
The operating voltage command generation module, be used to produce steering order: Vo_init+N * Vo_step, and this steering order is transferred to described memory standard operating voltage adjustment module, make described memory standard operating voltage adjustment module regulate the back according to steering order Vo_init+N * Vo_step and produce a plurality of unsteady operating voltage the standard operation voltage of described internal memory; Wherein, described Vo_init is the standard operation voltage of described internal memory, and N is an integer, and Vo_step is that voltage is adjusted step-length;
The reference voltage command generation module, be used to produce steering order: Vf_init+K * Vf_step, and this instruction is transferred to described memory standard reference voltage adjustment module, make described memory standard reference voltage adjustment module regulate the back according to steering order Vf_init+K * Vf_step and produce a plurality of unsteady reference voltages the canonical reference voltage of described internal memory; Wherein, described Vf_init is the canonical reference voltage of described internal memory, and K is an integer, and Vf_step is that voltage is adjusted step-length.
Preferably, aforementioned calculation machine mainboard also comprises:
Memory module is used for the chip that the described a pair of operating voltage of obtaining and reference voltage are kept at described mainboard.
Preferably, aforementioned calculation machine mainboard also comprises:
Sub-test result matrix forms module, be used at described test result matrix, with the standard operation voltage of described internal memory and canonical reference voltage be symcenter choose m capable * the sub-test result matrix of n row, wherein m, n are the odd number greater than 1;
Judge module, be used for judging a pair of operating voltage and reference voltage that whether a pair of operating voltage that the element B 11, B1n, Bm1, Bmn of described sub-test result matrix is corresponding respectively and reference voltage are mainboard and internal memory compatibility, if, then with a pair of operating voltage of the symcenter correspondence of described sub-test result matrix and real work voltage and the actual reference voltage that reference voltage is set to internal memory respectively; If not, the described sub-test result matrix of translation then, and judge whether described sub-test result matrix travels through described test result matrix, if not, then rejudge a pair of operating voltage and the reference voltage whether corresponding respectively a pair of operating voltage of element B 11 in the described sub-test result matrix, B1n, Bm1, Bmn and reference voltage are mainboard and internal memory compatibility; If assert that then described mainboard and internal memory are incompatible.
Preferably, above-mentioned memory voltage output module is serial i/o interface or the parallel input/output interface on the described mainboard.
Technique scheme is regulated respectively according to steering order by memory standard operating voltage and memory standard reference voltage to computer motherboard, when operating voltage of regulating internal memory or reference voltage, need not divider resistance is changed, make the adjusting of memory voltage convenient, and after the standard operation voltage of internal memory and canonical reference voltage regulated, form many combinations to operating voltage and reference voltage, therefrom choose the operating voltage of a pair of mainboard and internal memory compatibility and reference voltage actual output voltage as internal memory, thereby solved the compatibility issue of mainboard and internal memory, adjusting to operating voltage and reference voltage simultaneously can be realized by program, has improved the efficient to mainboard and memory compatibility test.
Description of drawings
Fig. 1 is the operating voltage of internal memory in the prior art and the bleeder circuit synoptic diagram of reference voltage;
Fig. 2 is the operating voltage of embodiments of the invention computer motherboard output internal memory and the circuit diagram of reference voltage;
Fig. 3 is an embodiments of the invention memory voltage regulating method schematic flow sheet;
Fig. 4 is the test result matrix A synoptic diagram in the method shown in Figure 3;
Fig. 5 is the operating voltage of internal memory and the effect synoptic diagram of the key parameter that reference voltage influences internal memory;
Fig. 6 is the structural representation of embodiments of the invention computer motherboard;
Fig. 7 is the memory standard operating voltage adjustment module in the computer motherboard shown in Figure 6 or the electrical block diagram of memory standard reference voltage adjustment module;
Fig. 8 is the memory standard operating voltage adjustment module in the computer motherboard shown in Figure 6 or the another kind of electrical block diagram of memory standard reference voltage adjustment module.
Embodiment
For technical matters, technical scheme and advantage that embodiments of the invention will be solved is clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
Embodiments of the invention provide a kind of memory voltage regulating method and a kind of computer motherboard at the operating voltage of internal memory in the prior art and the compatibility issue of the inconvenient adjusting of reference voltage and computer motherboard and internal memory existence.
As shown in Figure 2, be the operating voltage (VCC_DDR) of embodiments of the invention computer motherboard output internal memory and the circuit diagram of reference voltage (VDDR_REF), input port (Port) by the memory voltage output module, to memory voltage output module input command, the output voltage of VCC_DDR is adjusted according to the requirement of order, also can be by the input port (Port) of memory voltage output module, to memory voltage output module input command, the output voltage of VDDR_REF is adjusted according to the requirement of order, that is to say, in the embodiments of the invention, can control the different operating voltage and different reference voltages of memory voltage output module output by Port, the operating voltage of internal memory and reference voltage are adjustable respectively, make the adjusting of internal memory operating voltage and reference voltage convenient, and provide crucial condition for the compatibility issue that solves mainboard and internal memory.
As shown in Figure 3, the embodiments of the invention memory voltage regulating method comprises the steps:
Said method passes through input control order, make the standard operation voltage and the canonical reference voltage of internal memory adjustable respectively according to these steering orders, when needs are regulated the standard operation voltage of internal memory or canonical reference voltage, do not need to change divider resistance, just can realize adjusting easily memory voltage.
Among the above-mentioned memory voltage regulating method embodiment shown in Figure 3, also comprise the steps:
The operating voltage of obtaining in step 37, the step 36 is set to the real work voltage and the output of internal memory, and the reference voltage that obtains in the step 36 is set to the actual reference voltage and the output of internal memory.
In the said method, behind standard operation voltage and canonical reference voltage-regulation to internal memory, through the memory compatibility test, form a test result matrix A, in the test result matrix A, choose the operating voltage and the reference voltage of the internal memory of a pair of compatible optimum, computer motherboard is exported compatible optimal working voltage and reference voltage according to this, with regard to having avoided computer motherboard and internal memory, solved the compatibility issue of mainboard and internal memory so in use owing to incompatible computer corruption or the blue screen phenomenon of causing.
As shown in Figure 4, synoptic diagram for the test result matrix A in the above-mentioned steps 34, in forming test result matrix A process, step 32 and step 33 are to carry out simultaneously, when whenever obtaining a pair of unsteady operating voltage and unsteady reference voltage, the memory voltage output module will be exported this a pair of unsteady operating voltage and unsteady reference voltage, and the compatibility of test memory under this a pair of unsteady operating voltage and unsteady reference voltage, if test result is compatible, then in this square, increase corresponding mark to float operating voltage and unsteady reference voltage correspondence, if test result is incompatible, also in this square, increase corresponding mark to float operating voltage and reference voltage correspondence, the final test result matrix A that forms, certainly at first when obtaining standard operation voltage and canonical reference voltage, also to carry out compatibility test to standard operation voltage and canonical reference voltage.
Theoretically, in the process that forms the test result matrix A, step 32 and step 33 also can be nonsynchronous, as long as pairing a pair of operating voltage of each element and reference voltage in the final testing result matrix A all pass through compatibility test.
Illustrate and in above-mentioned test result matrix A, choose the compatible optimum a pair of operating voltage and the process of reference voltage, standard operation voltage 1.80V, canonical reference voltage 0.900V with internal memory are example, the a plurality of unsteady operating voltage that is produced according to mentioned order Vo_init+N * Vo_step is respectively 1.50V, 1.55V......2.10V, and a plurality of unsteady reference voltage that is produced according to mentioned order Vf_init+K * Vf_step is respectively: 0.980V, 0.960V......0.820V; Wherein, the square of mark " * " is represented not operating voltage and the reference voltage by compatibility test, the square of mark " √ " is represented operating voltage and the reference voltage by compatibility test, in this test result matrix, can choose the operating voltage and the reference voltage of a pair of being labeled as " √ ", as the adjustment voltage of internal memory, the actual output voltage according to this adjusted magnitude of voltage control internal memory just can guarantee that mainboard and internal memory compatibility issue can not occur.
Consider the instability of power supply power supply, the operating voltage of internal memory and reference voltage usually need certain margin range, and therefore, above-mentioned steps 35 is specially:
1) in described test result matrix A, choose m capable * the sub-test result matrix B of n row, wherein m, n are the odd number greater than 1; Preferably, in order to improve compatibility test efficient, shorten the test duration, can with the standard operation voltage of internal memory and canonical reference voltage be symcenter choose m capable * the sub-test result matrix B of n row;
2) judge B
Ll, B
Ln, B
Ml, B
MnWhether Dui Ying a pair of operating voltage and reference voltage are a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility respectively;
3) if then with a pair of operating voltage of the symcenter correspondence of sub-test result matrix B and real work voltage and the actual reference voltage that reference voltage is set to internal memory respectively, step finishes; If not, then go to step 4);
4) the described sub-test result matrix B of translation, and judge that whether described sub-test result matrix B travels through described test result matrix A, if not, then turns to step 2); If assert that then described mainboard and internal memory are incompatible.
That is to say,, then directly use the standard operation voltage of internal memory and canonical reference voltage actual output voltage as internal memory if the combination of the operating voltage on four angles of above-mentioned sub-test result matrix B 1 and reference voltage all pass through to test;
There are the operating voltage and the reference voltage combination at indivedual angles can not pass through test in four angles as fruit test result matrix B, in the sub-test result matrix B 1 among Fig. 4, include the square of mark " * ", illustrate that also there is compatibility issue in this sub-test result matrix, specified operating voltage and the reference voltage of its symcenter (square of mark " √ ◎ ") can not be as the real work voltage and the actual reference voltage of internal memory, this sub-test result matrix B 1 of translation then, after the translation is sub-test result matrix B 2, four of antithetical phrase test result matrix B 2 angles are judged again, if four angles all are labeled as " √ " then with the specified operating voltage of the symcenter (as the square of mark " √ ※ ") of this sub-test result matrix B 2 and reference voltage real work voltage and the actual reference voltage as internal memory;
There are the operating voltage and the reference voltage combination at a plurality of angles can not pass through test in four angles as fruit test result matrix B, illustrating in this sub-test result matrix does not have suitable operating voltage and reference voltage, directly abandons the cooperation of all working voltage and reference voltage in this sub-test result matrix.
In the above-mentioned sub-test result matrix B 2, the pairing operating voltage 1.75V of its symcenter, reference voltage 0.880V is during as the actual adjustment voltage of internal memory, to guarantee that also operating voltage is between 1.65V～1.75V and 1.75V～1.85V, the combination in any of reference voltage between 0.900V～0.860V all is compatible, certainly the operating voltage of above-mentioned internal memory or the margin range that reference voltage defined are not limited for example with above-mentioned, also can change to some extent, but also must satisfy the requirement of internal memory operate as normal, be higher than the adjustment operating voltage of the too many operating voltage of standard operation voltage as not choosing as internal memory, may burn internal memory like this, can not choose the operating voltage or the reference voltage that make the memory information transmission distortion, because internal memory itself is a digit chip, the operating voltage of adjusting internal memory can have influence on the high level ring tolerance limit and the low level ring tolerance limit of internal memory, the reference voltage of adjusting internal memory is a threshold voltage, can influence the signal Time Created of internal memory and the retention time of signal, as shown in Figure 5, must satisfy the requirement of these four parameters to the adjustment amount of the operating voltage of internal memory and reference voltage, that is to say, if the adjustment amount of inappropriate operating voltage or reference voltage has influence on these four parameters one of them, computing machine will crash or blue screen, and compatibility test just can not passed through.
In the above-mentioned steps 37, can be by the serial i/o interface on the mainboard or parallel input/output interface input adjustment criteria operating voltage or the employed control command of canonical reference voltage, also can be set to the real work voltage output of internal memory by the operating voltage that this serial i/o interface or parallel input/output interface obtain at last, the reference voltage that obtains at last is set to the actual reference voltage output of internal memory; And the source end of this serial i/o interface or parallel input/output interface can link together with the output of the chip of mainboard, as linking together with the output of South Bridge chip on the mainboard.
In sum, the embodiments of the invention memory voltage regulating method, regulate control command by working voltage, make the operating voltage and the reference voltage of internal memory adjustable respectively according to order, do not need to change divider resistance, make the adjusting of memory voltage convenient, many after adjusting in operating voltage and the reference voltage, seek preferable operating voltage of a pair of compatibility and reference voltage, be saved in the chip of computer motherboard, and set and the actual output voltage of control internal memory according to this operating voltage and reference voltage, guaranteed the compatibility of mainboard and internal memory to the full extent, and in said method, regulating the operating voltage and the reference voltage of internal memory can be realized by program according to control command, therefore with respect to the compatibility test method of mainboard of the prior art and internal memory, shorten the time of mainboard and memory compatibility test greatly, improved the efficient of test.
As shown in Figure 6, also provide a kind of computer motherboard, comprising:
The memory voltage output module is used to export the real work voltage and the actual reference voltage of internal memory;
Initialization module is used for initialization memory voltage output module, makes the memory voltage output module export the standard operation voltage and the canonical reference voltage of internal memory respectively;
Memory standard operating voltage adjustment module, the standard operation voltage that is used for internal memory is input voltage, to a plurality of unsteady operating voltage of generation after the input voltage regulation, and these a plurality of unsteady operating voltage of output;
The operating voltage command generation module, be used for producing instruction: Vo_init+N * Vo_step, and this instruction is transferred to memory standard operating voltage adjustment module, make memory standard operating voltage adjustment module regulate the back according to Vo_init+N * Vo_step and produce a plurality of unsteady operating voltage input voltage; Wherein, Vo_init is the standard operation voltage of internal memory, and N is an integer, and Vo_step is that voltage is adjusted step-length;
Memory standard reference voltage adjustment module, the canonical reference voltage that is used for internal memory is input voltage, to a plurality of unsteady reference voltages of generation after the input voltage regulation, and these a plurality of unsteady reference voltages of output;
The reference voltage command generation module, be used for producing instruction: Vf_init+K * Vf_step, and this instruction is transferred to memory standard reference voltage adjustment module, make memory standard reference voltage adjustment module regulate the back according to Vf_init+K * Vf_step and produce a plurality of unsteady reference voltages input voltage; Wherein, Vf_init is the canonical reference voltage of internal memory, and K is an integer, and Vf_step is that voltage is adjusted step-length;
The test result matrix forms module, being used for standard operation voltage and a plurality of unsteady operating voltage is row/row, with canonical reference voltage and a plurality of unsteady reference voltage is row/OK, form a test matrix, pairing a pair of operating voltage of each element in the described test matrix and reference voltage are carried out the memory compatibility test, form the test result matrix A;
Acquisition module, be used in the test result matrix A, obtain a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility, and operating voltage and the reference voltage that obtains transferred to the memory voltage output module, the operating voltage of being obtained by the memory voltage output module is set to the real work voltage output of internal memory, and the reference voltage that obtains is set to the actual reference voltage output of internal memory;
Aforementioned calculation machine mainboard also comprises:
Memory module is used for the chip that a pair of operating voltage that will obtain and reference voltage are kept at mainboard.
Sub-test result matrix forms module, be used in the test result matrix A, with the standard operation voltage of internal memory and canonical reference voltage be symcenter choose m capable * the sub-test result matrix B of n row, wherein m, n are the odd number greater than 1;
Judge module, be used for judging a pair of operating voltage and reference voltage that whether a pair of operating voltage that element B ll, Bln, Bml, the Bmn of sub-test result matrix B is corresponding respectively and reference voltage are mainboard and internal memory compatibility, if, then with a pair of operating voltage of the symcenter correspondence of sub-test result matrix B and real work voltage and the actual reference voltage that reference voltage is set to internal memory respectively; If not, the described sub-test result matrix B of translation then, and judge whether described sub-test result matrix B travels through described test result matrix A, if not, then rejudge a pair of operating voltage and the reference voltage whether corresponding respectively a pair of operating voltage of element B ll, Bln in the described sub-test result matrix B, Bml, Bmn and reference voltage are mainboard and internal memory compatibility; If assert that then described mainboard and internal memory are incompatible.
Preferably, above-mentioned memory voltage output module is serial i/o interface or parallel input/output interface, the source end of this serial i/o interface or parallel input/output interface can link together with the output of the chip of mainboard, as linking together with the output of South Bridge chip on the mainboard.
In addition, above-mentioned memory standard operating voltage adjustment module can be realized by circuit as shown in Figure 7: wherein, V_in is the standard operation voltage of the internal memory of input, V_adj is the regulated quantity of memory standard operating voltage adjustment module to the standard operation voltage of internal memory, V_out is the unsteady operating voltage of output, R_0 and R_1 are the resistance of special setting, use the R_1 of different resistances, and output voltage V _ out will be different;
Certain above-mentioned memory standard reference voltage adjustment module also can be realized by circuit as shown in Figure 7: at this moment, V_in is the canonical reference voltage of the internal memory of input, and V_out is the unsteady reference voltage of output.
Promptly, for operating voltage and the reference voltage to internal memory on the mainboard that is implemented in computing machine distinguished adjustable, can on the mainboard of computing machine, use circuit as shown in Figure 7 to replace respectively memory standard operating voltage adjustment module and memory standard reference voltage adjustment module.
Above-mentioned memory standard operating voltage adjustment module or memory standard reference voltage adjustment module also can adopt circuit as shown in Figure 8 to realize: wherein, R_1, R_2, R_3......R_n is the resistance of special setting, K_1, K_2, K_3......K_n is corresponding electronic switch, control pin I_1 when correspondence, I_2, when I_3......I_n is high level, gauge tap can be opened, make corresponding resistance eutral grounding, otherwise, corresponding resistance does not have access circuit, by using different I_1, I_2, the combination of I_3......I_n realizes the output of different V_out.
Among the embodiment of computer motherboard shown in Figure 6, memory standard operating voltage adjustment module or memory standard reference voltage adjustment module are when regulation voltage, be not limited to adopt above-mentioned Fig. 7 and circuit shown in Figure 8, other circuit that also can adopt computing machine to control reach the purpose that is obtained a plurality of different output voltages by an input voltage.
The foregoing description is by memory standard operating voltage adjustment module and memory standard reference voltage adjustment module input of control commands to mainboard, make the operating voltage and the reference voltage of internal memory adjustable respectively according to order, do not need to change standard operation voltage and the canonical reference voltage of divider resistance with regard to the scalable internal memory, made things convenient for adjusting to memory voltage, many after adjusting in operating voltage and the reference voltage, seek preferable operating voltage of a pair of compatibility and reference voltage, be saved in the chip of computer motherboard, and set and the actual output voltage of control internal memory according to this operating voltage and reference voltage, guaranteed the compatibility of mainboard and internal memory to the full extent, and in said method, regulating the operating voltage and the reference voltage of internal memory can be realized by program according to control command, therefore with respect to the compatibility test method of mainboard of the prior art and internal memory, shorten the time of mainboard and memory compatibility test greatly, improved the efficient of test.
The above is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (11)
1. a memory voltage regulating method is characterized in that, comprises the steps:
Obtain and export the standard operation voltage and the canonical reference voltage of internal memory;
By input control order,, and export described a plurality of unsteady operating voltage to a plurality of unsteady operating voltage of generation after the standard operation voltage-regulation of described internal memory;
By input control order,, and export described a plurality of unsteady reference voltage to a plurality of unsteady reference voltages of generation after the canonical reference voltage-regulation of described internal memory;
With described standard operation voltage and described a plurality of unsteady operating voltage is row/row, with described canonical reference voltage and described a plurality of unsteady reference voltage is row/OK, form a test matrix, pairing a pair of operating voltage of each element in the described test matrix and reference voltage are carried out mainboard and memory compatibility test, form the test result matrix;
In described test result matrix, obtain a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility, and the described operating voltage of obtaining is set to the real work voltage of internal memory, the described reference voltage that obtains is set to the actual reference voltage of internal memory.
2. memory voltage regulating method according to claim 1 is characterized in that, by input control order, the step that produces a plurality of unsteady operating voltage after the standard operation voltage-regulation of described internal memory is specially:
Pass through input control order: Vo_init+N * Vo_step, to producing a plurality of unsteady operating voltage after the standard operation voltage-regulation of described internal memory; Wherein, described Vo_init is the standard operation voltage of described internal memory, and N is an integer, and Vo_step is that voltage is adjusted step-length;
By input control order, the step that produces a plurality of unsteady reference voltages after the canonical reference voltage-regulation of described internal memory is specially:
Pass through input control order: Vf_init+K * Vf_step, to producing a plurality of unsteady reference voltages after the canonical reference voltage-regulation of described internal memory; Wherein, described Vf_init is the canonical reference voltage of described internal memory, and K is an integer, and Vf_step is that voltage is adjusted step-length.
3. memory voltage regulating method according to claim 1 is characterized in that, in described test result matrix, obtains a pair of operating voltage of mainboard and internal memory compatibility and the step of reference voltage and also comprises afterwards:
In the chip that the described a pair of operating voltage of obtaining and reference voltage are kept at described mainboard.
4. memory voltage regulating method according to claim 1, it is characterized in that, in described test result matrix, obtain a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility, and the described operating voltage of obtaining is set to the real work voltage of internal memory, and the step that the described reference voltage that obtains is set to the actual reference voltage of internal memory is specially:
In described test result matrix, choose m capable * the sub-test result matrix of n row, wherein m, n are the odd number greater than 1;
Judge the element B in the described sub-test result matrix
11, B
1n, B
M1, B
MnWhether Dui Ying a pair of operating voltage and reference voltage are a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility respectively;
If, then with a pair of operating voltage of the symcenter correspondence of described sub-test result matrix and real work voltage and the actual reference voltage that reference voltage is set to internal memory respectively.
5. memory voltage regulating method according to claim 4 is characterized in that, in described test result matrix, choose m capable * step of the sub-test result matrix of n row is specially:
In described test result matrix, with the standard operation voltage of described internal memory and canonical reference voltage be symcenter choose m capable * the sub-test result matrix of n row.
6. memory voltage regulating method according to claim 1 is characterized in that, the described operating voltage of obtaining is set to the real work voltage of internal memory, and the step that the described reference voltage that obtains is set to the actual reference voltage of internal memory is specially:
Be set to the real work voltage of internal memory by serial i/o interface on the described mainboard or the described operating voltage of obtaining of parallel input/output interface, the described reference voltage that obtains is set to the actual reference voltage of internal memory.
7. a computer motherboard is characterized in that, comprising:
The memory voltage output module is used to export the real work voltage and the actual reference voltage of internal memory;
Initialization module is used for the described memory voltage output module of initialization, makes described memory voltage output module export the standard operation voltage and the canonical reference voltage of internal memory respectively;
Memory standard operating voltage adjustment module is used for by input control order, to a plurality of unsteady operating voltage of generation after the standard operation voltage-regulation of described internal memory, and exports described a plurality of unsteady operating voltage;
Memory standard reference voltage adjustment module is used for by input control order, to a plurality of unsteady reference voltages of generation after the canonical reference voltage-regulation of described internal memory, and exports described a plurality of unsteady reference voltage;
The test result matrix forms module, being used for described standard operation voltage and described a plurality of unsteady operating voltage is row/row, with described canonical reference voltage and described a plurality of unsteady reference voltage is row/OK, form a test matrix, pairing a pair of operating voltage of each element in the described test matrix and reference voltage are carried out mainboard and memory compatibility test, form the test result matrix;
Acquisition module is used for obtaining a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility at described test result matrix, and described operating voltage of obtaining and reference voltage is transferred to described memory voltage output module;
Described memory voltage output module described operating voltage of obtaining of output and reference voltage.
8. computer motherboard according to claim 7 is characterized in that, also comprises:
The operating voltage command generation module, be used to produce steering order: Vo_init+N * Vo_step, and this steering order is transferred to described memory standard operating voltage adjustment module, make described memory standard operating voltage adjustment module regulate the back according to steering order Vo_init+N * Vo_step and produce a plurality of unsteady operating voltage the standard operation voltage of described internal memory; Wherein, described Vo_init is the standard operation voltage of described internal memory, and N is an integer, and Vo_step is that voltage is adjusted step-length;
The reference voltage command generation module, be used to produce steering order: Vf_init+K * Vf_step, and this steering order is transferred to described memory standard reference voltage adjustment module, make described memory standard reference voltage adjustment module regulate the back according to steering order Vf_init+K * Vf_step and produce a plurality of unsteady reference voltages the canonical reference voltage of described internal memory; Wherein, described Vf_init is the canonical reference voltage of described internal memory, and K is an integer, and Vf_step is that voltage is adjusted step-length.
9. computer motherboard according to claim 7 is characterized in that, also comprises:
Memory module is used for the chip that the described a pair of operating voltage of obtaining and reference voltage are kept at described mainboard.
10. computer motherboard according to claim 7 is characterized in that, also comprises:
Sub-test result matrix forms module, be used at described test result matrix, with the standard operation voltage of described internal memory and canonical reference voltage be symcenter choose m capable * the sub-test result matrix of n row, wherein m, n are the odd number greater than 1;
Judge module is used for judging the element B of described sub-test result matrix
11, B
1n, B
M1, B
MnWhether Dui Ying a pair of operating voltage and reference voltage are a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility respectively, if, then with a pair of operating voltage of the symcenter correspondence of described sub-test result matrix and real work voltage and the actual reference voltage that reference voltage is set to internal memory respectively; If not, the described sub-test result matrix of translation then, and judge whether described sub-test result matrix travels through described test result matrix, if not, then rejudge the element B in the described sub-test result matrix
11, B
1n, B
M1, B
MnWhether Dui Ying a pair of operating voltage and reference voltage are a pair of operating voltage and the reference voltage of mainboard and internal memory compatibility respectively; If assert that then described mainboard and internal memory are incompatible.
11. computer motherboard according to claim 7 is characterized in that, described memory voltage output module is serial i/o interface or the parallel input/output interface on the described mainboard.
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| CN104572381A (en) * | 2015-02-04 | 2015-04-29 | 浪潮电子信息产业股份有限公司 | Method for voltage bias for memory through BIOS |
| CN107272862A (en) * | 2016-04-06 | 2017-10-20 | 华为技术有限公司 | Determine the method and terminal of terminal handler voltage |
| CN106251904A (en) * | 2016-07-26 | 2016-12-21 | 深圳市智微智能科技开发有限公司 | Memory voltage regulating method and circuit |
| CN115309223B (en) * | 2022-08-29 | 2023-08-04 | 苏州浪潮智能科技有限公司 | DC voltage bias setting method, device, computer equipment and storage medium |
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