CN101545127A - Process for producing electronically-encapsulated metal cover plate - Google Patents
Process for producing electronically-encapsulated metal cover plate Download PDFInfo
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- CN101545127A CN101545127A CN200910111329A CN200910111329A CN101545127A CN 101545127 A CN101545127 A CN 101545127A CN 200910111329 A CN200910111329 A CN 200910111329A CN 200910111329 A CN200910111329 A CN 200910111329A CN 101545127 A CN101545127 A CN 101545127A
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- metal cover
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Abstract
The invention provides a process for producing an electronically-encapsulated metal cover plate, which comprises the following steps that: a sheet alloy is adopted as an embryo body, subjected to punching molding or chemical etching molding and then subjected to polishing, preplating and pulse plating nickel to prepare the electronically-encapsulated metal cover plate. The process adopts bi-electrode pulse plating technology; no phosphorus element is contained in a plating solution; a plating layer has good evenness, fine crystals, high purity and low cost; no spark and no phenomenon of slag drop are generated in the subsequent seam welding; and the electronically-encapsulated metal cover plate remarkably improves the excellent product rate of an electronic product, replaces an import product and has remarkable economic benefit.
Description
Technical field
The invention belongs to the Electronic Components Manufacturing technical field, more specifically relate to a kind of process for producing electronically-encapsulated metal cover plate.
Background technology
The electronically-encapsulated metal cover plate application surface is very wide.It is widely used in surface acoustic wave (SAW), quartz oscillator, resonator, and unicircuit (IC) encapsulation cover plate.Advantage such as the metal cover board of past common chemical plating nickel-phosphorus alloy has that coating is even, erosion resistance is strong, fusing point low (only 890 ℃), parallel seam welding and weldability are good, tens of consumption Ceng Gaoda.But develop rapidly along with electronic industry, the electronic component products volume is more and more littler, the product precision is more and more higher, especially the metal cover board that uses of small volume quartz oscillator, resonator and surface acoustic wave (SAW) wave filter, no longer allow to contain in the coating phosphoric (because of as contain phosphorus, might produce spark during parallel seam welding, produce the slag phenomenon then, influence the quality product of institute's soldering and sealing.Therefore, develop the inexorable trend that phosphorated electroplating technology metal cover board not becomes the electronic devices and components miniaturization and improves the quality of products.
Goal of the invention
The purpose of this invention is to provide a kind of process for producing electronically-encapsulated metal cover plate, this process using two electrodes pulse plating technology, phosphorus element-containing not in the electroplate liquid, coating uniformity is good, crystallization is fine and closely woven, the purity height, cost is low, does not produce spark when follow-up seam weldering, do not fall the slag phenomenon, significantly improve the quality product rate of electronic product, can bring up to more than 96% from 82%, have remarkable economic efficiency.
Process for producing electronically-encapsulated metal cover plate of the present invention: the employing sheet alloy is an idiosome, through punch forming or chemical etching moulding, is prepared into described electronically-encapsulated metal cover plate through light decorations, plating pre-treatment, pulsed electrical nickel plating again.
Remarkable advantage of the present invention is: the present invention adopts two electrodes pulse plating technology, phosphorus element-containing not in the electroplate liquid:
(1) pulse plating distribution of current good uniformity.Refinement the coating crystallization, improved dispersive ability and covering power, make coating even; The pulse plating nickel dam is because the coating crystallization is fine and closely woven, and mostly is and waits a shape crystallization, greatly reduces the porosity of coating, increased wear resistance and resistance to corrosion.For example the direct current electrode position nickel dam is wanted 25 μ ability atresia, and pulse plating 15 μ can reach the imporosity.Can reduce by 2/5 coating.
(2) improve binding force of cladding material.Because the voltage of pulse plating crest voltage during much larger than dc plating, the cathode surface purification membrane is easily breakdown, helps strong the closing between coating and matrix, and bonding force is improved greatly.
(3) reduce impurity, reduce the coating internal stress.During pulse plating, because liberation of hydrogen is few, the codeposition and the lattice imperfection of impurity significantly reduce.The internal stress of coating reduces greatly, is easy to pressure welding, and packaging cost is improved greatly.
(4) nickel layer purity height, its purity〉99%, compare with chemical nickel plating and the most important thing is not phosphorus element-containing, do not produce spark during parallel seam welding.Not falling the slag phenomenon (can make the surface acoustic wave device rare short lose efficacy because of falling slag, make quartz resonator, resonant frequency skew, precise decreasing.Make the reliability decrease of integrated circuit (IC) products).The quality product rate of electronic product is improved greatly.
(5) compare with chemical nickel plating, bath temperature is low, save energy 60～70%.80～95 ℃ of chemical nickel-plating solution temperature, and the electrolytic ni plating temperature is 28～42 ℃.Substantially need not heat during summer.
(6) chemical nickel-plating solution less stable, the recovery of will losing efficacy of general 6～8 cycles.And the electrolytic plating solution good stability, but safeguard proper life-time service.And consumptive material is few, and cost is low.
Description of drawings
Fig. 1 is a process flow sheet of the present invention.
Embodiment
Adopting the alloy band is idiosome, and through punch forming or chemical etching moulding, again through light decorations, the laggard horizontal pulse electronickelling of plating pre-treatment: the two electrodes pulse plating is adopted in described pulsed electrical nickel plating, is negative electrode with the metal cover board, is anode with the high-purity nickel plate; Described plating solution formula is: NiSO
4200～260g/L, NiCl
230～40g/L, H
3BO
338～45g/L, MgSO
420～30g/L, dodecyl sulfate (as: sodium lauryl sulphate) 0.01g/L; The pH value is 3～4.2, and bath temperature is 28～42 ℃; The plating condition is: size of current: forward 0.5～0.9A/d
2, reverse 0.03～0.06A/d
2Pulse-repetition: direct impulse 1000Hz, reverse impulse 1000Hz; Forward dutycycle 20%, oppositely dutycycle 10%; Pulse width: forward 800ms, oppositely 100ms; The electronically-encapsulated metal cover plate that pulsed electrical nickel plating is prepared into is through checking into finished product.
Described alloy band adopts alloy band KOVAR or the iron-nickel alloy that is close with the base weld-ring coefficient of expansion, thickness 0.07～0.4mm.
Described light decorations employing mechanical polishing deburring (as.Add abrasive material 40～60 orders, 15～20g ground 15 minutes) and surface treatment.
Above punch forming or chemical etching moulding, light decorations, plating pre-treatment, checking procedure all adopt conventional method.
The product of surveying according to experiment of the present invention is as shown in table 1 below with the effect comparison of product in the past:
Table 1
| Product of the present invention | Chemical nickel plating product in the past |
| Nickel layer purity height, its purity〉99%, phosphorus element-containing does not stitch the weldering sparkless, falls the slag phenomenon. | Nickel layer purity is not high, its purity＜99%, and phosphorus element-containing, seam weldering normalizing is spent, is fallen slag, has a strong impact on quality product and reliability. |
| The electrolytic ni plating temperature is 28～42 ℃, and need not heat summer substantially, save energy 60～70%. | 80～95 ℃ of chemical nickel-plating solution temperature need heating. |
| The electrolytic plating solution good stability, but the section of maintenance is when life-time service.And consumptive material is few, and cost is low. | The nickel plating solution less stable, the recovery of will losing efficacy of general 6～8 cycles, consumptive material is many, the cost height. |
Quality product rate of the present invention can be brought up to more than 96% from 82%.
Below be several specific embodiment of the present invention, further specify the present invention, but the present invention be not limited only to this.
Embodiment 1
Adopting the alloy band KOVAR that is close with the base weld-ring coefficient of expansion is idiosome thickness 0.07mm.Through punch forming or chemical etching moulding, again through light decorations, the laggard horizontal pulse electronickelling of plating pre-treatment: the two electrodes pulse plating is adopted in described pulsed electrical nickel plating, is negative electrode with the metal cover board, is anode with the high-purity nickel plate; Described plating solution formula is: NiSO
4200g/L, NiCl
230g/L, H
3BO
338g/L, MgSO
420g/L, dodecyl sulfate (as: sodium lauryl sulphate) 0.01g/L; The pH value is 3, and bath temperature is 38 ℃; The plating condition is: size of current: forward 0.5A/d
2, reverse 0.03A/d
2Pulse-repetition: direct impulse 1000Hz, reverse impulse 1000Hz; Forward dutycycle 20%, oppositely dutycycle 10%; Pulse width: forward 800ms, oppositely 100ms; The electronically-encapsulated metal cover plate that pulsed electrical nickel plating is prepared into is through checking into finished product.
Described light decorations adopt mechanical polishing deburring and surface treatment.
Above punch forming or chemical etching moulding, light decorations, plating pre-treatment, checking procedure all adopt conventional method.
Embodiment 2
Adopt the iron-nickel alloy that is close with the base weld-ring coefficient of expansion, thickness 0.4mm is an idiosome, and through the chemical etching moulding, again through light decorations, the laggard horizontal pulse electronickelling of plating pre-treatment: the two electrodes pulse plating is adopted in described pulsed electrical nickel plating, with the metal cover board is negative electrode, is anode with the high-purity nickel plate; Described plating solution formula is: NiSO
4260g/L, NiCl
230～40g/L, H
3BO
345g/L, MgSO
430g/L, dodecyl sulfate (as: sodium lauryl sulphate) 0.01g/L; The pH value is 4.2, and bath temperature is 40～42 ℃; The plating condition is: size of current: forward 0.9A/d
2, reverse 0.06A/d
2Pulse-repetition: direct impulse 1000Hz, reverse impulse 1000Hz; Forward dutycycle 20%, oppositely dutycycle 10%; Pulse width: forward 800ms, oppositely 100ms; The electronically-encapsulated metal cover plate that pulsed electrical nickel plating is prepared into is through checking into finished product.
Described light decorations adopt mechanical polishing deburring and surface treatment.
Above punch forming or chemical etching moulding, light decorations, plating pre-treatment, checking procedure all adopt the method for routine of the present invention.
Embodiment 3
Adopt the alloy band KOVAR or the iron-nickel alloy that are close with the base weld-ring coefficient of expansion, thickness 0.1～0.3mm is an idiosome, through punch forming or chemical etching moulding, again through light decorations, the laggard horizontal pulse electronickelling of plating pre-treatment: the two electrodes pulse plating is adopted in described pulsed electrical nickel plating, with the metal cover board is negative electrode, and being higher than 99% nickel plate with purity is anode; Described plating solution formula is: NiSO
4230g/L, NiCl
240g/L, H
3BO
340g/L, MgSO
425g/L, dodecyl sulfate (as: sodium lauryl sulphate) 0.01g/L; The pH value is 4～4.2, and bath temperature is 40～42 ℃; The plating condition is: size of current: forward 0.6～0.8A/d
2, reverse 0.04～0.05A/d
2Pulse-repetition: direct impulse 1000Hz, reverse impulse 1000Hz; Forward dutycycle 20%, oppositely dutycycle 10%; Pulse width: forward 800ms, oppositely 100ms; The electronically-encapsulated metal cover plate that pulsed electrical nickel plating is prepared into is through checking into finished product.
Described light decorations adopt the mechanical polishing deburring, add abrasive material 40～60 orders, and 15～20g grinds 15 minutes and surface treatment.Above punch forming or chemical etching moulding, light decorations, plating pre-treatment, checking procedure all adopt conventional method.
Claims (5)
1. process for producing electronically-encapsulated metal cover plate, it is characterized in that: the employing sheet alloy is an idiosome, through punch forming or chemical etching moulding, is prepared into described electronically-encapsulated metal cover plate through light decorations, plating pre-treatment, pulsed electrical nickel plating again.
2. process for producing electronically-encapsulated metal cover plate according to claim 1, it is characterized in that: adopting the alloy band is idiosome, through punch forming or chemical etching moulding, again through light decorations, the laggard horizontal pulse electronickelling of plating pre-treatment: the two electrodes pulse plating is adopted in described pulsed electrical nickel plating, with the metal cover board is negative electrode, and being higher than 99% nickel plate with purity is anode; Described plating solution formula is: NiSO
4200～260g/L, NiCl
230～40g/L, H
3BO
338～45g/L, MgSO
420～30g/L, dodecyl sulfate 0.01g/L; The pH value is 3～4.2, and bath temperature is 28～42 ℃; The plating condition is: size of current: forward 0.5～0.9A/d
2, reverse 0.03～0.06A/d
2Pulse-repetition: direct impulse 1000Hz, reverse impulse 1000Hz; Forward dutycycle 20%, oppositely dutycycle 10%; Pulse width: forward 800ms, oppositely 100ms.
3. process for producing electronically-encapsulated metal cover plate according to claim 2 is characterized in that: the electronically-encapsulated metal cover plate that described pulsed electrical nickel plating is prepared into is through checking into finished product.
4. process for producing electronically-encapsulated metal cover plate according to claim 2 is characterized in that: described alloy band adopts alloy band KOVAR or the iron-nickel alloy that is close with the base weld-ring coefficient of expansion, thickness 0.07～0.4mm.
5. process for producing electronically-encapsulated metal cover plate according to claim 2 is characterized in that: described light decorations adopt mechanical polishing deburring and surface treatment.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976749A (en) * | 2010-09-16 | 2011-02-16 | 深圳市大富科技股份有限公司 | Surface treatment method for filter cavity, cavity filter and communication apparatus |
| CN102877097A (en) * | 2012-08-02 | 2013-01-16 | 湖北三江航天红林探控有限公司 | Electroplating method for improving purity of galvanized coating |
| CN103132114A (en) * | 2013-03-21 | 2013-06-05 | 湖南特力液压有限公司 | wear-resistant worpiece and manufacturing method of wear-resistant coating thereof |
| CN105529311A (en) * | 2016-01-11 | 2016-04-27 | 无锡中微高科电子有限公司 | Parallel seam welding alloy cover plate for package of integrated circuit and fabrication method of parallel seam welding alloy cover plate |
| CN110846643A (en) * | 2019-11-22 | 2020-02-28 | 中国电子科技集团公司第五十八研究所 | Method for enhancing reliability of parallel seam welding packaging salt fog |
| CN113707618A (en) * | 2021-08-26 | 2021-11-26 | 中国电子科技集团公司第五十八研究所 | Salt-spray-corrosion-resistant parallel seam welding alloy cover plate and preparation method thereof |
Family Cites Families (3)
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|---|---|---|---|---|
| JP2005166955A (en) * | 2003-12-02 | 2005-06-23 | Tanaka Kikinzoku Kogyo Kk | Hermetic seal cap and manufacturing method thereof |
| JP4802867B2 (en) * | 2006-05-31 | 2011-10-26 | 富士ゼロックス株式会社 | Electronic component, laser device, optical writing device, and image forming apparatus |
| CN101343760A (en) * | 2008-08-28 | 2009-01-14 | 南平市同创电子有限公司 | Microelectron packaging metal cover plate electroplating nickel phosphor alloy production technology |
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2009
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976749A (en) * | 2010-09-16 | 2011-02-16 | 深圳市大富科技股份有限公司 | Surface treatment method for filter cavity, cavity filter and communication apparatus |
| CN101976749B (en) * | 2010-09-16 | 2013-11-06 | 深圳市大富科技股份有限公司 | Surface treatment method for filter cavity, cavity filter and communication apparatus |
| CN102877097A (en) * | 2012-08-02 | 2013-01-16 | 湖北三江航天红林探控有限公司 | Electroplating method for improving purity of galvanized coating |
| CN102877097B (en) * | 2012-08-02 | 2015-03-25 | 湖北三江航天红林探控有限公司 | Electroplating method for improving purity of galvanized coating |
| CN103132114A (en) * | 2013-03-21 | 2013-06-05 | 湖南特力液压有限公司 | wear-resistant worpiece and manufacturing method of wear-resistant coating thereof |
| CN103132114B (en) * | 2013-03-21 | 2016-02-10 | 湖南特力液压有限公司 | The manufacture method of wear-resisting workpiece and scuff-resistant coating thereof |
| CN105529311A (en) * | 2016-01-11 | 2016-04-27 | 无锡中微高科电子有限公司 | Parallel seam welding alloy cover plate for package of integrated circuit and fabrication method of parallel seam welding alloy cover plate |
| CN105529311B (en) * | 2016-01-11 | 2018-02-23 | 无锡中微高科电子有限公司 | Parallel seam welding alloy cover plate of integrated antenna package and preparation method thereof |
| CN110846643A (en) * | 2019-11-22 | 2020-02-28 | 中国电子科技集团公司第五十八研究所 | Method for enhancing reliability of parallel seam welding packaging salt fog |
| CN113707618A (en) * | 2021-08-26 | 2021-11-26 | 中国电子科技集团公司第五十八研究所 | Salt-spray-corrosion-resistant parallel seam welding alloy cover plate and preparation method thereof |
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|---|---|
| CN101545127B (en) | 2011-03-16 |
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Denomination of invention: Process for producing electronically-encapsulated metal cover plate Effective date of registration: 20130416 Granted publication date: 20110316 Pledgee: Bank of China, Limited by Share Ltd, Nanping branch Pledgor: FUJIAN NANPING SANJIN ELECTRONICS CO., LTD. Registration number: 2013350000007 |
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