CN101527253B - Method for manufacturing customization of photoelectric element - Google Patents
Method for manufacturing customization of photoelectric element Download PDFInfo
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- CN101527253B CN101527253B CN2008100832553A CN200810083255A CN101527253B CN 101527253 B CN101527253 B CN 101527253B CN 2008100832553 A CN2008100832553 A CN 2008100832553A CN 200810083255 A CN200810083255 A CN 200810083255A CN 101527253 B CN101527253 B CN 101527253B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a method for manufacturing the customization of a photoelectric element. A production flow provided by the method for manufacturing the customization comprises a forepart flow, a customization module which is connected with the forepart flow and a register step which is between the forepart flow and the customization module, wherein a preset number of semi-finished products produced according to the forepart flow are suspended in the register step; and the customization module is modulated according to the requirement of a client so as to ensure that the customization module meets the requirement of the client.
Description
Technical field
The present invention relates to a kind of method for manufacturing customization of photoelectric cell.
Background technology
Semiconductor optoelectronic element, for example light-emitting diode (LED) or solar cell (solar cell), the effect that has respectively energy-conservation and clean energy, being subject to world green group and national governments payes attention to widely, and the timetable of having stipulated actively promotes, to solve the problem of global warming.In the face of the demand of Fast Growth, photoelectric cell manufactory traditional manually in conjunction with the semi-automatic mode of production, can face at least and comprise that the friendship phase shortens, and client be the challenge in response to the diversified product specification of polynary application generation.Therefore, except positive expansion production line with in response to wilderness demand and polynary application, efficient production procedure and fast reaction client's demand has been the current emphasis of demanding urgently improving.
The invention provides the customized production method of a photoelectric cell, take into account simultaneously customer demand and efficient production, use with the acceleration industry.
Summary of the invention
The present invention discloses the method for manufacturing customization of a photoelectric cell.This method for manufacturing customization comprises provides a production procedure, comprises a leading portion flow process, this leading portion flow process and one of a customized modular splicing is deposited step between this leading portion flow process and this customized module; And suspend in this according to the semi-finished product that the leading portion flow process is produced a predetermined quantity and to deposit step, make and meet this customer requirement to modulate this customized module according to a customer requirement.
According to one embodiment of the invention, described customer requirement comprises a brightness requirement.
According to one embodiment of the invention, described customer requirement comprises a smooth shape or rising angle requirement.
According to one embodiment of the invention, described customer requirement comprises a wavelength requirement.
According to one embodiment of the invention, described customer requirement comprises a thermal resistance requirement.
According to one embodiment of the invention, described customized module more comprises and presets comparison list or control curve in order to modulate this customized module.
According to one embodiment of the invention, described photoelectric cell comprises light-emitting diode or solar cell.
Description of drawings
Fig. 1 is a flow chart, shows the embodiment according to method for manufacturing customization of the present invention;
Fig. 2 is a flow chart, further discloses the customized module Q1 of Fig. 1;
Fig. 3 is a flow chart, further discloses the customized module Q2 of Fig. 1;
Fig. 4 is a flow chart, further discloses the customized module Q3 of Fig. 1;
Fig. 5 is a flow chart, further discloses the customized module Q4 of Fig. 1;
Fig. 6 is a flow chart, shows another embodiment according to method for manufacturing customization of the present invention.
The reference numeral explanation
A1, a2: the submodule of customized module Q1;
B1, b2: the submodule of customized module Q2;
C1: the submodule of customized module Q3;
D1, d2: the submodule of customized module Q4;
Ap1, ap2, bp1, bp2, cp1, dp1, dp2: customized parameter
P1: brightness requirement;
P2: light shape or rising angle requirement;
P3: wavelength requirement;
P4: thermal resistance requirement;
Q1-Q4: customized module;
S1-S7: normal process step;
T1-T5: deposit step;
Bypass 1-bypass 5: bypass step.
Embodiment
Fig. 1 discloses a customized production procedure according to the invention, comprises normal process step S1-S7, between the customized module Q1-Q4 between step S4 and S5 and one deposit step T1 before customized module Q1-Q4.Each step is described as follows:
S1 (growth substrate): a growth substrate is provided, of heap of stone brilliant laminated in order to the semiconductor of growing up, this growth substrate comprise growing up GaAs (GaAs) wafer of AlGaInP (AlGaInP), or in order to the sapphire (Al of the InGaN of growing up (InGaN)
2O
3) wafer, gallium nitride (GaN) wafer or carborundum (SiC) wafer, or in order to become growth of III-V family solar cell laminated silicon wafer, germanium wafer or gallium arsenide wafer;
S2 (building crystal to grow): growing up one at this growth substrate, to have a crystalline substance of heap of stone of photoelectric characteristic laminated, and for example luminous (light-emitting) is laminated or photovoltaic (photovoltaic) is laminated;
S3 (wafer inspection): with a wafer tester (testing prober), whether the crystalline substance of heap of stone on the test growth substrate is laminated meets electrical requirement, as decides the current value (I of voltage
v); Or wavelength characteristic such as spike long value (peak wavelength) or half-peak wide cut (half-peak width);
S4 (crystal grain formation): with little shadow and etch process technology at laminated a plurality of grainiesses and the electrode zone of defining of above-mentioned crystalline substance of heap of stone;
Customized module Q1: for a brightness requirement P1, modulate customized module Q1 in response to a client, to reach this brightness requirement P1, detailed customized module Q1 will be in follow-up detailed description;
Customized module Q2: require P2 in response to a client for a smooth shape or rising angle, modulate customized module Q2, to reach this light shape or rising angle requirement P2, detailed customized module Q2 will be in follow-up detailed description;
Customized module Q3: require P3 in response to a client for a wavelength, modulate customized module Q3, to reach this wavelength requirement P3, detailed customized module Q3 will be in follow-up detailed description;
Customized module Q4: require P4 in response to a client for a thermal resistance, modulate customized module Q4, require P4 to reach this thermal resistance, detailed customized module Q4 will be in follow-up detailed description;
S5 (electrode formation): form p side and n lateral electrode on the electrode zone of the correspondence of each crystal grain, as the usefulness that is electrically connected to outside line;
S6 (crystal grain detection): with a crystal grain test machine (testing prober), whether the photoelectric characteristic of testing each crystal grain meets the requirements, as decides the current value (I of voltage
v); Or wavelength characteristic such as spike long value (peakwavelength) or half-peak wide cut (half-peak width);
S7 (crystal grain cutting): after finishing above-mentioned production procedure, the wafer that cutting has a said structure makes each die separation, becomes a photoelectric cell that meets customer demand.
For convenience of description, the production procedure before depositing step T1 is referred to as the leading portion flow process; Production procedure after customized module is referred to as follow-up flow process; And between leading portion flow process and customized flow process, exist one to deposit step to keep the semi-finished product of being finished in advance according to the leading portion flow process, after the customer requirement acknowledgement, can will remain in the semi-finished product of depositing step continues to the customized module production of correspondence, to reach client's requirement.In addition, deposit step and comprise semi-finished product that timing leading portion flow process finishes and remain in and deposit depositing the time of step, and a default crash time, when the time of depositing less than or begin to carry out customized module close to the crash time; If the time of depositing is equal to the crash time and does not receive yet or confirm customer requirement, then production procedure is carried out bypass 1 step and is jumped directly to next step.
Fig. 2～Fig. 5 further discloses corresponding to customized module Q1-Q4 shown in Figure 1.
Please refer to Fig. 2 further discloses corresponding to customized module Q1 shown in Figure 1.At first, the semi-finished product of finishing in the leading portion flow process keep a predetermined quantity in depositing step T1, client's to be received brightness requirement P1, namely let pass remain in deposit step semi-finished product to carry out customized module Q1, wherein, the default submodule a1 of customized module Q1 and submodule a2, the requirement that corresponding brightness promotes or brightness reduces respectively, wherein, luminance raising or brightness reduction is the standardized product of producing with respect to without any customized module.Submodule a1 comprises a patterned surface step, is to utilize little shadow/etch process technology to form the coarse surface of tool roughness on brilliant surface of heap of stone, or forms the patterned surface of tool rule or irregular alignment pattern, to link the requirement of luminance raising; Wherein, by adjusting customized parameter ap1, for example etching period, patterning density or pattern dimension can obtain the surface of tool different roughness or pattern.Submodule a1 more comprises comparison list or control curve, and the corresponding relation of pre-recorded customized parameter ap1 and luminance raising value in order to choose corresponding customized parameter value according to client's brightness requirement, reaches client's brightness requirement.Submodule a2 comprises the step of a formation photomask, be utilize sputtering machine table sputter one thin metal layer on described crystalline substance of heap of stone is laminated to absorb a part of light, reach the requirement that brightness reduces, wherein, by adjusting customized parameter ap2, for example photomask thickness can obtain different shaded effects.Submodule a2 comprises again comparison list or control curve, and the corresponding relation of pre-recorded customized parameter ap2 and brightness reduction value in order to choose corresponding customized parameter value according to client's brightness requirement, reaches client's brightness requirement.
Please refer to Fig. 3 further discloses corresponding to customized module Q2 shown in Figure 1.Customized module Q2 mainly requires P2 according to client's light shape or rising angle, let pass to carry out customized module Q2 with remaining in the corresponding semi-finished product of depositing step T1, wherein, the default submodule b1 of customized module Q2 and submodule b2 are with respectively corresponding light shape and rising angle requirement.For example, submodule b1 comprises formation one microstructured layers in of heap of stone brilliant laminated upper with a corresponding smooth shape requirement, wherein, by adjusting customized parameter b p1, for example adjust the micro-structural kenel, can obtain different light shapes, for example be irregular kenel with the light shape that forms diffusion, photonic crystal kenel with the micro-structural on the light shape that forms collimated light or the long inclined-plane of the tool light shape with the formation lateral direction light emission.Submodule b1 more comprises the table of comparisons that presets, in order to require to choose corresponding micro-structural kenel according to client's light shape, reaches client's light shape requirement.Submodule b2 comprises formation one rising angle and adjusts layer in of heap of stone brilliant laminated upward with a corresponding requirement about rising angle, this rising angle adjustment layer comprise one have multi-layer film structure cumulative or decrescence refractive index be formed at described crystalline substance of heap of stone laminated on, so that light shape inside contracts or extends out, wherein, by adjusting customized parameter b p2, for example for comprising silica (SiO
2)/silicon nitride (Si
3N
4) rising angle adjust the logarithm of layer, to obtain different rising angles.Submodule b2 more comprises the table of comparisons or the control curve that presets, and the corresponding relation of pre-recorded customized parameter b p2 and rising angle in order to require to choose corresponding customized parameter value according to client's rising angle, reaches client's rising angle requirement.
Please refer to Fig. 4 further discloses corresponding to customized module Q3 shown in Figure 1.Customized module Q3 mainly requires P3 according to client's wavelength, lets pass to carry out customized module Q3 with remaining in the corresponding semi-finished product of depositing step T1, and wherein, the default submodule c1 of customized module Q3 requires P3 with the different wavelength of correspondence.Submodule c1 comprises formation one wavelength conversion layer in of heap of stone brilliant laminated upper with a corresponding wavelength requirement, wherein, by adjusting customized parameter c p1, for example select wavelength conversion material, to change by the brilliant laminated primary light wavelength that sends of heap of stone, for example be black light or blue light wavelength 390～460nm, become green, orange, red light wavelength scope.Submodule c1 more comprises the table of comparisons that presets, in order to require to choose corresponding wavelength conversion material according to client's wavelength, reaches client's requirement.
Please refer to Fig. 5 further discloses corresponding to customized module Q4 shown in Figure 1.Customized module Q4 mainly requires P4 according to client's thermal resistance, lets pass to carry out customized module Q4 with remaining in the corresponding semi-finished product of depositing step T1, wherein, and the default submodule d1 of customized module Q4 and submodule d2.Submodule d1 comprises and has laminated growth substrate of heap of stone brilliant and carry out thinning aforementioned, to reduce the element thermal resistance, wherein, by adjusting customized parameter d p1, for example is thinning thickness, and the element that can obtain having different thermal resistances is to reach the client for the requirement of thermal resistance.Submodule d1 more comprises the table of comparisons or the control curve that presets, and the corresponding relation of pre-recorded customized parameter d p1 and element thermal resistance in order to require to choose corresponding customized parameter value according to client's thermal resistance, reaches client's requirement.Submodule d2 comprises a substrate transfer step, comprise select and heat-conducting substrate that the thermal resistance that meets the client of fitting requires laminated to described crystalline substance of heap of stone, and remove described growth substrate.Wherein, by adjusting customized parameter d p2, for example be the thermal conductivity values (thermal conductivity) of heat-conducting substrate, use the thermal resistance of adjusting element, to reach the client for the requirement of thermal resistance.Submodule d2 more comprises the table of comparisons that presets, and the corresponding relation of pre-recorded customized parameter d p2 and element thermal resistance in order to require to choose corresponding customized parameter value according to client's thermal resistance, reaches client's requirement.
Fig. 6 discloses the embodiment of another customized flow process according to the invention.The customized module Q1-Q3 of Fig. 6 continues and each other between step S4 and S5, customized module Q4 is then between step S5 and S6, and corresponding the setting deposited step T2-T5 before each customized module Q1-Q4, and depositing step T2-T5 respectively comprises the described semi-finished product of timing and remaines in and deposit depositing the time of step, and each default crash time, it for example is 1～90 day, be preferably in 30 days, be more preferred from 7 days, under the prerequisite that does not affect the semi-finished product quality, with the control time of respectively the depositing customized module that within each crash time, begins to carry out; If the time of depositing do not receive yet or confirm customer requirement being equal to the crash time, then carry out corresponding bypass 2-bypass 5 steps and make and jump directly to next step.
Cited each embodiment of the present invention is not to limit the scope of the invention only in order to the present invention to be described.Any aobvious and easy to know modification that anyone does the present invention or change neither disengaging spirit of the present invention and scope.
Claims (7)
1. the manufacture method of a photoelectric cell comprises:
One growth wafer is provided;
Grow up one have the crystalline substance of heap of stone of photoelectric characteristic laminated on this growth wafer to form the semi-finished product element of a tool photoelectric characteristic;
Test the photoelectric characteristic of this semi-finished product element;
One pre-provisioning request is provided;
This semi-finished product element is carried out a customized module make and meet this pre-provisioning request, wherein, this pre-provisioning request comprises and is selected from the requirement that brightness requirement, the requirement of light shape, rising angle requirement, wavelength requirement and thermal resistance require the group that forms.
2. manufacture method as claimed in claim 1 more is included in this brilliant laminated a plurality of grainiesses and electrode zone of defining of heap of stone.
3. manufacture method as claimed in claim 2 more comprises formation p side and n lateral electrode on the electrode zone of the correspondence of each crystal grain.
4. manufacture method as claimed in claim 3 more comprises the photoelectric characteristic of testing each crystal grain and whether meets this pre-provisioning request.
5. manufacture method as claimed in claim 4 more comprises this growth wafer of cutting and makes each die separation.
6. manufacture method as claimed in claim 1 wherein, is carried out this customized module, is to modulate customized parameter corresponding to one of this customized module according to a table of comparisons that presets or control curve.
7. manufacture method as claimed in claim 1, wherein, this photoelectric characteristic comprises current value, spike long value, or the half-peak wide cut.
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| CN201210490858.1A CN102945005B (en) | 2008-03-04 | 2008-03-04 | A kind of method for manufacturing customization of photoelectric cell |
| CN2008100832553A CN101527253B (en) | 2008-03-04 | 2008-03-04 | Method for manufacturing customization of photoelectric element |
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| CN100536178C (en) * | 2004-11-26 | 2009-09-02 | 大连路美芯片科技有限公司 | Production of gallium nitride light emitting diode chip with small volume and hight brightness |
| CN100401541C (en) * | 2005-01-14 | 2008-07-09 | 财团法人工业技术研究院 | Quantum spot/quantum well light emitting diode |
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| CN101527253A (en) | 2009-09-09 |
| CN102945005B (en) | 2016-05-18 |
| CN102945005A (en) | 2013-02-27 |
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