CN101526827A - Voltage-to-current conversion circuit - Google Patents
Voltage-to-current conversion circuit Download PDFInfo
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- CN101526827A CN101526827A CN200810082493A CN200810082493A CN101526827A CN 101526827 A CN101526827 A CN 101526827A CN 200810082493 A CN200810082493 A CN 200810082493A CN 200810082493 A CN200810082493 A CN 200810082493A CN 101526827 A CN101526827 A CN 101526827A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 28
- 230000005669 field effect Effects 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 230000003412 degenerative effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
The invention relates to a voltage-to-current conversion circuit, which is provided with a high-voltage process N type metal semiconductor field effect transistor, a low-voltage process N type metal semiconductor field effect transistor, a low-voltage process amplifier and a resistor, so the voltage-to-current conversion circuit can be directly applied to a circuit of the high-voltage process so as to reduce the manufacturing cost.
Description
Technical field
The present invention relates to a kind of voltage-to-current conversion circuit, refer to that especially a kind of use low-voltage technology amplifier promotes low-voltage technology N type metal-semiconductor field effect transistor, voltage-to-current conversion circuit can directly be used down in the circuit of high voltage technology.
Background technology
Known voltage to current converter circuit mainly utilizes the framework of voltage follower, utilizes plug-in resistance to decide current value then, and this kind mode is feasible in low voltage circuit.Because the critical voltage of N type metal-semiconductor field effect transistor approximately is about 0.5～0.8V in low-voltage technology, so the amplitude of oscillation of the output stage of amplifier (swing) can also promote the N type metal-semiconductor field effect transistor of next stage, and makes the metal-semiconductor field effect transistor of amplifier inside remain on the saturation region.
Fig. 1 is that known voltage is to current converter circuit 1.Given input voltage VI is to the positive input terminal of amplifier 2, make output voltage VO equal input voltage VI via negative feedback then, adjust electric current I by resistance R, but the metal-semiconductor field effect transistor 3 that everything all must be all just can be set up in the saturation region, because only in the saturation region, amplifier 2 just can be a linear amplifier, and satisfies degenerative condition.
But in high voltage circuit, want the words of working voltage to current converter circuit, will face will be with high voltage technology amplifier or with low-voltage technology amplifier, if use the words of high voltage technology amplifier will make area and power increase many, and to be to use low-voltage technology amplifier will face the limited problem of the amplitude of oscillation (swing), because the threshold voltage variations at high voltage technology amplifier is very big, approximately be between 1～2V, so general low-voltage technology amplifier possibly can't promote high voltage technology N type metal-semiconductor field effect transistor.
In addition at process aspect, because of high voltage technology and not as good as the low-voltage process stabilizing, so critical voltage is also just very unstable, generally speaking between 1～2V, so must adding input voltage VI greater than critical voltage Vt (high voltage technology N type metal-semiconductor field effect transistor), the amplitude of oscillation of amplifier (swing) just can promote high voltage technology N type metal-semiconductor field effect transistor, if the words of the supply voltage VDD=3V of low voltage circuit, amplifier just not necessarily can promote high voltage technology N type metal-semiconductor field effect transistor, because this moment, the amplitude of oscillation (swing) of amplifier was necessarily little than 3V, unless VI is very little for input voltage, but the value of input voltage VI all can not be too little on reality is used
Therefore, how to develop a kind of voltage-to-current conversion circuit, it uses low-voltage technology amplifier to promote low-voltage technology N type metal-semiconductor field effect transistor, voltage-to-current conversion circuit can directly be used down in the circuit of high voltage technology, and then the reduction manufacturing cost, will be that the present invention desires actively to inquire into part.
Summary of the invention
The present invention proposes a kind of voltage-to-current conversion circuit, and its fundamental purpose is for solving known voltage to current converter circuit, and it needs high voltage technology amplifier to promote the problem of high voltage technology N type metal-semiconductor field effect transistor.
An embodiment of the invention are a kind of voltage-to-current conversion circuit, comprising: high voltage technology N type metal-semiconductor field effect transistor; Low-voltage technology N type metal-semiconductor field effect transistor, the source electrode of its drain electrode and this high voltage technology N type metal-semiconductor field effect transistor joins; Low-voltage technology amplifier, it has positive input terminal, negative input end and output terminal, wherein the grid of this output terminal and this low-voltage technology N type metal-semiconductor field effect transistor joins, and the source electrode that input voltage is imported this positive input terminal and this negative input end and this low-voltage technology N type metal-semiconductor field effect transistor joins to produce output voltage; And resistance, the source electrode of one end and this low-voltage technology N type metal-semiconductor field effect transistor joins other end ground connection.
According to voltage-to-current conversion circuit of the present invention, also comprise: electric capacity, in parallel with described resistance.
According to voltage-to-current conversion circuit of the present invention, also comprise the grid that clamp voltage inputs to described high voltage technology N type metal-semiconductor field effect transistor.
According to voltage-to-current conversion circuit of the present invention, wherein, described input voltage equates with described output voltage.
According to voltage-to-current conversion circuit of the present invention, wherein, the input current of importing the drain electrode of described high voltage technology N type metal-semiconductor field effect transistor equals described output voltage divided by described resistance.
Thus, use low-voltage technology amplifier to promote low-voltage technology N type metal-semiconductor field effect transistor, voltage-to-current conversion circuit can directly be used down in the circuit of high voltage technology, and then reach the purpose that reduces manufacturing cost.
Description of drawings
Fig. 1 is that known voltage is to current converter circuit.
Fig. 2 is the circuit diagram of a kind of voltage-to-current conversion circuit of the present invention.
Fig. 3 is applied to a kind of circuit diagram of led display unit preferred embodiment for the present invention.
Wherein, description of reference numerals is as follows:
1 voltage-to-current conversion circuit
2 amplifiers
3 metal-semiconductor field effect transistors
4 voltage-to-current conversion circuits
5 high voltage technology N type metal-semiconductor field effect transistors
6 low-voltage technology N type metal-semiconductor field effect transistors
7 drain electrodes
8 source electrodes
9 low-voltage technology amplifiers
10 positive input terminals
11 negative input ends
12 output terminals
13 grids
14 source electrodes
15 drain electrodes
16 grids
17 clamp voltages
The 18LED display unit
The 19LED element
20 fixed voltage source
C1 electric capacity
The I electric current
The I1 input current
R resistance
R1 resistance
The VI input voltage
The VI1 input voltage
The VO output voltage
The VO1 output voltage
Embodiment
For fully understanding purpose of the present invention, feature and effect, by following specific embodiment, and conjunction with figs., the present invention is elaborated, illustrate as the back:
Fig. 2 is the circuit diagram of a kind of voltage-to-current conversion circuit of the present invention.Please refer to Fig. 2, voltage-to-current conversion circuit 4 of the present invention comprises: high voltage technology N type metal-semiconductor field effect transistor (HV NMOS) 5; Low-voltage technology N type metal-semiconductor field effect transistor (LV NMOS) 6, the source electrode 8 of its drain electrode 7 and this high voltage technology N type metal-semiconductor field effect transistor 5 joins; Low-voltage technology amplifier 9, it has positive input terminal 10, negative input end 11 and output terminal 12, wherein this output terminal 12 joins with the grid 13 of this low-voltage technology N type metal-semiconductor field effect transistor 6, the source electrode 14 that input voltage VI1 imports this positive input terminal 10 and this negative input end 11 and this low-voltage technology N type metal-semiconductor field effect transistor 6 joins to produce output voltage VO 1, wherein, this input voltage VI1 equates with this output voltage VO 1; And resistance R 1, the source electrode 14 of one end and this low-voltage technology N type metal-semiconductor field effect transistor 6 joins, other end ground connection, wherein, the input current I1 that imports the drain electrode 15 of this high voltage technology N type metal-semiconductor field effect transistor 5 equals the value of the value of this output voltage VO 1 divided by this resistance R 1.Because low-voltage technology N type metal-semiconductor field effect transistor 6 is under high-tension path, so must limit low-voltage technology N type metal-semiconductor field effect transistor 6 drain electrode 7 voltages in case element burn, therefore preferable grid 16 at high voltage technology N type metal-semiconductor field effect transistor 5 gives clamp voltage 17, and drain electrode 7 voltages that make low-voltage technology N type metal-semiconductor field effect transistor 6 thus are in the endurable scope of element.
Fig. 3 is applied to a kind of circuit diagram of led display unit preferred embodiment for the present invention.Please refer to Fig. 3 and cooperate Fig. 2, because of led display unit 18 when deciding electric current, its brightness is the most stable, at this input current I1 that uses voltage-to-current conversion circuit 4 of the present invention as a reference current, give LED element 19 ends by the framework of electric current mapping (Current Mirror) via high voltage technology P type metal-semiconductor field effect transistor (HV PMOS) and high voltage technology N type metal-semiconductor field effect transistor (HVNMOS) mapping then, so just can produce a constant current source, under this circuit framework, must produce fixing voltage source earlier, so preferable use energy gap (BandGap) circuit produces fixed voltage source 20, in practical application, be series connection because of low-voltage technology N type metal-semiconductor field effect transistor 5 and high voltage technology N type metal-semiconductor field effect transistor 6, so having noise comes from the high voltage process component, be subjected to the words of noise jamming if be afraid of reference current, can filter noise at resistance R 1 shunt capacitance C1, but need consider the problem of led display unit 18 degree of stability, if the too big words of capacitor C 1, then phase place margin (Phase Margin) is too little, led display unit 18 just may vibrate under negative feedback, and if the too little words of capacitor C 1, then do not reach the effect of filtering again, then need the suitable capacitance of decision earlier this moment, and then the framework of decision amplifier, the phase place margin (Phase Margin) that makes led display unit 18 is in suitable scope.
Can clearly understand by the above, the invention provides a kind of voltage-to-current conversion circuit, it uses low-voltage technology amplifier to promote low-voltage technology N type metal-semiconductor field effect transistor, voltage-to-current conversion circuit can directly be used down in the circuit of high voltage technology, and then reach the purpose that reduces manufacturing cost.Therefore, the present invention has possessed novelty and progressive on the angle of patent, has more possessed the usability on the industry on the market, and suitable auditor gives a patent.
Below patented claim of the present invention is elaborated, only the above person only is the preferred embodiment of patented claim of the present invention, when not limiting the scope that patented claim of the present invention is implemented.Be that all equalizations of doing according to claim of the present invention change and modify etc., all should still belong in the claim of patented claim of the present invention.
Claims (5)
1, a kind of voltage-to-current conversion circuit, it comprises:
High voltage technology N type metal-semiconductor field effect transistor;
Low-voltage technology N type metal-semiconductor field effect transistor, the source electrode of its drain electrode and described high voltage technology N type metal-semiconductor field effect transistor joins;
Low-voltage technology amplifier, it has positive input terminal, negative input end and output terminal, the grid of wherein said output terminal and described low-voltage technology N type metal-semiconductor field effect transistor joins, and the source electrode that input voltage is imported described positive input terminal and described negative input end and described low-voltage technology N type metal-semiconductor field effect transistor joins to produce output voltage; And
Resistance, the source electrode of one end and described low-voltage technology N type metal-semiconductor field effect transistor joins other end ground connection.
2, as claim the 1 described voltage-to-current conversion circuit, also comprise: electric capacity, in parallel with described resistance.
3,, also comprise the grid that clamp voltage inputs to described high voltage technology N type metal-semiconductor field effect transistor as claim the 1 described voltage-to-current conversion circuit.
4, as claim the 1 described voltage-to-current conversion circuit, wherein, described input voltage equates with described output voltage.
5, as claim the 4 described voltage-to-current conversion circuits, wherein, the input current of importing the drain electrode of described high voltage technology N type metal-semiconductor field effect transistor equals described output voltage divided by described resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810082493A CN101526827A (en) | 2008-03-06 | 2008-03-06 | Voltage-to-current conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810082493A CN101526827A (en) | 2008-03-06 | 2008-03-06 | Voltage-to-current conversion circuit |
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| Publication Number | Publication Date |
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| CN101526827A true CN101526827A (en) | 2009-09-09 |
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| CN200810082493A Pending CN101526827A (en) | 2008-03-06 | 2008-03-06 | Voltage-to-current conversion circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820255A (en) * | 2010-04-12 | 2010-09-01 | 湖北大学 | Voltage follower for high voltage input |
| CN103582822A (en) * | 2011-03-30 | 2014-02-12 | 电力电子测量有限公司 | Apparatus for current measurement |
| CN105680431A (en) * | 2016-03-25 | 2016-06-15 | 中国电子科技集团公司第五十八研究所 | Adjustable current-limiting protection circuit |
| CN105870903A (en) * | 2010-09-06 | 2016-08-17 | 晨星半导体股份有限公司 | High voltage resisting output/input circuit and relevant device |
| CN114487544A (en) * | 2021-12-30 | 2022-05-13 | 西安拓尔微电子股份有限公司 | Current detection circuit and load driving device |
-
2008
- 2008-03-06 CN CN200810082493A patent/CN101526827A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820255A (en) * | 2010-04-12 | 2010-09-01 | 湖北大学 | Voltage follower for high voltage input |
| CN105870903A (en) * | 2010-09-06 | 2016-08-17 | 晨星半导体股份有限公司 | High voltage resisting output/input circuit and relevant device |
| CN103582822A (en) * | 2011-03-30 | 2014-02-12 | 电力电子测量有限公司 | Apparatus for current measurement |
| CN103582822B (en) * | 2011-03-30 | 2016-09-14 | 电力电子测量有限公司 | Equipment for current measurement |
| CN105680431A (en) * | 2016-03-25 | 2016-06-15 | 中国电子科技集团公司第五十八研究所 | Adjustable current-limiting protection circuit |
| CN114487544A (en) * | 2021-12-30 | 2022-05-13 | 西安拓尔微电子股份有限公司 | Current detection circuit and load driving device |
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Application publication date: 20090909 |