CN101522346B - Polycrystalline diamond abrasive compacts - Google Patents
Polycrystalline diamond abrasive compacts Download PDFInfo
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- CN101522346B CN101522346B CN2007800363446A CN200780036344A CN101522346B CN 101522346 B CN101522346 B CN 101522346B CN 2007800363446 A CN2007800363446 A CN 2007800363446A CN 200780036344 A CN200780036344 A CN 200780036344A CN 101522346 B CN101522346 B CN 101522346B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/006—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes with additional metal compounds being carbides
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- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
The present invention is for a polycrystalline diamond composite material comprising diamond particles and a binder phase, the polycrystalline diamond composite material defining a plurality of intersThe present invention is for a polycrystalline diamond composite material comprising diamond particles and a binder phase, the polycrystalline diamond composite material defining a plurality of interstices and the binder phase being distributed in the interstices to form binder pools. The invention is characterised in that there is present in the binder phase a separate tungsten carbide particulattices and the binder phase being distributed in the interstices to form binder pools. The invention is characterised in that there is present in the binder phase a separate tungsten carbide particulate phase in excess of 0.05 total volume %, but not greater than 2 volume %, expressed as a % of the total composite material and that the tungsten carbide particulate phase is homogenously distributede phase in excess of 0.05 total volume %, but not greater than 2 volume %, expressed as a % of the total composite material and that the tungsten carbide particulate phase is homogenously distributedin the composite material in such a manner that the relative standard deviation of the tungsten carbide grain size is less than 1. The invention extends to a method of manufacturing the composite matein the composite material in such a manner that the relative standard deviation of the tungsten carbide grain size is less than 1. The invention extends to a method of manufacturing the composite material and to a polycrystalline diamond abrasive compact comprising the diamond composite material for use in cutting or abrading of a substrate or in drilling applications.rial and to a polycrystalline diamond abrasive compact comprising the diamond composite material for use in cutting or abrading of a substrate or in drilling applications.
Description
Technical field
The present invention relates to polycrystalline diamond abrasive compacts (compact) and prepare the method for polycrystalline diamond abrasive compacts.
Background of invention
Polycrystalline diamond abrasive compacts (PDC) is owing to the high abrasion resistance of polycrystalline diamond component is widely used for cutting, polishing, grinds, holes and other grinding action.They are particularly useful as included shearing elements in the drill bit that uses for earth drilling.Normally used PDC comprises the polycrystalline diamond (PCD) that is attached to base material or the layer of cohesive bond diamond particles.Diamond particles content in these layers is high usually, and usually exists a large amount of directly diamonds with adamantine combination or contact.The diamond briquetting carries out sintering usually under the temperature and pressure condition that improves, diamond particles is being stable on the crystallography or on the thermodynamics under the described conditions.
Can be in U.S. Patent No. 3,745,623; 3,767,371 and 3,743, find the example of composite abrasive compact in 489 the description.
It is relative fragility that the PCD layer tends to, and this often limits the useful life of instrument in application.Therefore usually the PCD layer is attached on the metal-backed material, this material serves as the attrition-resistant support of diamond composite portion.Up to the present the most common form of gained body is to be attached to for example disk of the polycrystalline diamond of the cylinder of WC-Co of cemented carbide.Usually the combination of these two kinds of elements of in-situ accomplishes during the sintering of diamond dust precursor under high temperature and pressure (HpHT).
Except that diamond particles, the PCD layer of this types of abrasives briquetting also will typically contain catalyst/solvent or adhesive phase.This is typically the metal-to-metal adhesive matrix form, the inherent mixture of networks of described matrix and melee material.This matrix comprises the metal that shows catalysis or solvation activity for carbon usually, for example cobalt, nickel, iron or comprise the alloy of one or more such metals.
Matrix or adhesive also can contain other phase mutually.In the typical abrasives briquetting of type of the present invention, these will account for final adhesive phase less than 10 quality %.Their form can be for being embedded in than the metal carbides for example mutually of the other separation in the matrix of soft metal subsequently, perhaps their form can for main metal mutually in the element of alloying form.
Usually place with fine-grained form and make composite abrasive compact on the cemented carbide substrate by forming the necessary component of abrasive compacts.Except that superhard particles, described component also can comprise solvent powder, sintering or binder aid material.This unconjugated assembly (assembly) is placed reaction jacket (capsule), then this jacket is placed the reaction zone of conventional high pressure/high temperature apparatus.The sintering of general structure then makes the suitable condition of the inclusion temperature and pressure that stands to improve of reaction jacket, can take place.
Common way depends on the adhesive that is produced by the cemented carbide as the source of the used metal binder material of sintering polycrystalline diamond at least in part.Yet, in many situations, before sintering, the additional metals binder powders is mixed with diamond dust.This adhesive phase metal serves as the liquid phase medium that promotes that diamond partially sinters then under the sintering condition that applies.
Under typical high pressure, high temperature sintering condition, the binder metal that is derived from cemented carbide substrate also will be in company with the dissolved substance that is derived from carbide lamella that carries proper level when its infiltration diamond layer.The amount of dissolved substance is subjected to that the influencing strongly of pressure and temperature condition of sintering---wherein higher temperature will be increased in the amount in the solution usually.When using preferred WC-Co base material, these are W base materials.
Penetrate into PCD when zone at it, the tungsten material of dissolving and carbide reaction from diamond layer, and can be used as the carbide base and separate out mutually.In some cases, thisly come separating out of Autoadhesive to take place with big and uncontrollable scale.Therefore it show as the thick WC precipitate of tens of and even hundreds of microns sizes.They usually between synthesis phase on the outer peripheral edges of PDC body or near formation; And their usually (but not necessarily) tend to be connected with interface zone space with substrate carbides.Yet when they formed really, the distribution of these precipitates tended to run through highly inconsistently macroscopical PCD layer.Some zones that existence had few carbide precipitate (if any); Some high district of their shared relative volumes wherein.
Find the nonferromagnetic substance of these WC precipitate grievous injury briquettings, this is because they are by reducing mechanical strength with more low intensive alternative mutually required polycrystalline superhard material.In addition, also can serve as stress raiser under the load of these defect areas in application among the PCD, this then causes breaking too early of PCD material.
U.S. Patent No. 6,915,866 have discussed the formation of these defectives or metalmark and the adverse effect that they can have the briquetting performance.In this patent, it is said chromium carbide is joined the formation that reduces these precipitates in the PCD layer.Yet the foreign substance for example use of chromium carbide itself has been represented the introducing of other chemistry and physics heterogeneity.Possible is that it also may produce the final structure of suboptimum.Because the existence of chromium carbide also may a little repellence that reduces diamond composites to hot deterioration.The other shortcoming of use chromium carbide relates to the sinterability of compound---and it may be subjected to obstruction to a certain degree under normal sintering temperature, and therefore may require higher than usual sintering temperature so that obtain the sintering of proper level.
The temperature that is used for PDC body sintering by reduction has proved reducing these thick precipitates and some success occurred obtaining.Yet this is not necessarily feasible usually, because this will typically cause the sintering condition of suboptimum and the not too fully PCD of sintering therefore.
In order to reduce any dependence that other suggestion that thick precipitate occurs is to avoid adhesive phase that base material is produced.In this case, exclusively add catalysis material and prevent or suppress infiltration to the PCD powder from substrate carbides.Yet, depend on adhesive at least in part and have significant benefits from base material infiltration diamond regions.
Also probed into for example use of steel of substitution material that is used for base material, although these typically are difficult to sinter to the PCD layer and can't provide and the preferred identical performance of WC-Co base material.
Wish that very exploitation can realize the abrasive compacts of the optimum performance of impact resistance and abrasion resistance in the PCD layer.Difficulty be these optimum performances typically occur in the PCD layer in can produce in the similar sintering environment of sintering environment of big carbide defective.These carbide defectives itself have very deleterious effects to these performances that need simultaneously.Therefore be starved of the means that prevent or suppress these carbide formation.
Summary of the invention
According to a first aspect of the invention, provide and comprised diamond particles and adhesive polycrystalline diamond stone composite material mutually; This polycrystalline diamond stone composite material limits a plurality of gaps and described adhesive and is distributed in mutually in the described gap and forms binder pool, it is characterized in that, % by whole composites, described adhesive is middle mutually to be existed above 0.05 volume %, preferably be not less than 0.1 volume %, but be not more than 2 volume %, preferably be not more than 1.5% separation tungsten carbide particulate phase, and this tungsten carbide particulate with the relative standard deviation of WC grain size (representing) by equivalent diameter preferably less than 1, be more preferably less than 0.9 and most preferably be evenly distributed in the described composite less than 0.8 such mode.
The polycrystalline diamond stone composite material will usually and be preferably formed the layer that is bonded to the cemented carbide substrate surface, form polycrystalline diamond abrasive compacts.Described base material is the cemented tungsten carbide base material preferably.
Can stand to be suitable for the temperature and pressure of the synthetic raising of diamond by making adamantine powder composition and optional fine-grained form adhesive, make polycrystalline diamond stone composite material of the present invention.It is the 0.5-5 quality % of composition, preferred 1.0-3.0 quality % that the feature of described powder composition preferably is to exist the amount of the fine granular tungsten carbide particle that is evenly distributed in the composition and existence.Tungsten carbide particle is a subparticle, has less than the preferred size of 1 μ m with less than the more preferably size of 0.75 μ m.Preferred tungsten carbide particle concentration (also being expressed as the tungsten carbide particle number in every gram diamond powder mixture) is every gram diamond 10
8-10
10, most preferably magnitude is 10
9Individual particle.
The invention provides above-mentioned polycrystalline diamond abrasive compacts as abrasion cutting element (for example being used for the cutting or the grinding of base material) or in the purposes of holing and using.
The description of embodiment
Present invention is directed at the polycrystalline diamond stone composite material for preparing under the high pressure/high temperature condition, this polycrystalline diamond stone composite material forms polycrystalline diamond abrasive compacts as the layer that is bonded to the cemented tungsten carbide base material usually.These composites are characterised in that they have the following adhesive phase of metallurgical properties: the tungsten carbide of separating out that this adhesive mutual-assistance must separate spreads all over distribution in even mode.
Diamond particles can be natural or synthetic source.The average grain size of diamond particles is generally sub-micron to tens of micrometer range sizes.The present invention average diamond grain size less than 25 μ m, be more preferably less than about 20 μ m and have special-purpose during most preferably less than 15 μ m.
In order to prepare polycrystalline diamond stone composite material of the present invention, can make above-mentioned powder composition stand to prepare necessary known temperature of diamond abrasive compacts and pressure condition.These conditions are those required conditions of diamond synthesis particle itself typically.Usually, employed pressure will be the 40-70 kilobar, and employed temperature will be 1300 ℃-1600 ℃.
By the polycrystalline diamond stone composite material is bonded to cemented carbide support or base material as layer, thereby form composite abrasive compact.In order to prepare such composite abrasive compact, powder composition before making the temperature and pressure condition of necessary raising, compression block is placed on the surface of cemented carbide body.Cemented carbide support or base material can be made by cemented tungsten carbide.The binder metal that is used for these carbide can be that this area is any known, for example nickel, cobalt, iron or comprise the alloy of one or more these metals.Typically, this adhesive can be present in the material main body by the amount of 10-20 quality %, but this can be low to moderate 6 quality %.In the binder metal some will be infiltrated abrasive compacts usually during briquetting forms.
There is the adhesive phase in polycrystalline diamond stone composite material of the present invention.This adhesive preferably is used for described adamantine catalyst/solvent mutually.Being used for adamantine catalyst/solvent is known in the art.Adhesive is cobalt, nickel, iron or comprise the alloy of one or more these metals preferably.This adhesive can be introduced as the mixture in the abrasive particle material by penetrating into during sintering processes in the abrasive particle material or with fine-grained form.Infiltration can produce from the outer shimming or the adhesive phase that place between base material and the diamond layer, perhaps from carbide support.Typically use the combination of several different methods.
During high pressure, high-temperature process, diamond particles is passed in catalyst/solvent material fusing and migration, serves as catalyst/solvent and therefore causes diamond particles to interosculate mutually by forming the diamond of separating out again.In case make, this composite comprises the coherent matrix of the diamond particles that interosculates, thereby forms the diamond multicrystal composite with many gaps, and above-mentioned adhesive or solvent/catalyst material are contained in described gap.In fact, therefore final composite comprises the two-phase compound, and wherein diamond accounts for a phase and another phase of binder constitutes.
The applicant finds, before sintering by fine granular tungsten carbide is introduced unsintered diamond mass as adulterant with the level of relatively low-levels, might suppress subsequently when sintering or sintering after form the carbide base precipitate of remarkable (gross) in mutually at adhesive.As if though undesirable chemistry may be seemed the violation intuition in the introducing system in addition mutually at first, the well distributed existence of these initial particulates in the presintering material significantly suppresses the uncontrollable formation of remarkable defective when it may take place of same or similar chemical phase subsequently.Not bound by theory, possible is that the mixture of powders of doping plays the filtrate effect, extracts any solute W with controlled manner wittingly, thereby reduces total concentration.This process then by reduce carbide form the available solute of institute prevent other in the sintering polycrystalline diamond layer the uncontrollable of carbide phase separate out.
Therefore the method that produces composite of the present invention is characterised in that, fine granular carbide is initially joined employed not sintered diamond abrasive grain mixture.Its form can be the separating particles that mixes, perhaps can use by the aggressivity of tungsten carbide abrasive media during the diamond powder mixture preparation and introduce, wherein diamond particles causes introducing required level to the corrasion of tungsten carbide abrading-ball under the grinding condition of quite requiring great effort.The deposition of being undertaken by chemistry or physical means can be used for tungsten carbide is incorporated in the diamond powder mixture.Sometimes can use the combination of these methods.
Typically, this tungsten carbide adds and will for example produce about 0.5 quality % in powdery diamond composition before sintering until the tungsten carbide content of about 5 quality % (by the percentage of sintering powder composition not).Find that in generally will forming the polycrystalline diamond stone material of the present invention of carbide defective, the tungsten carbide level of introducing with 0.7 quality % will have positive effect.Yet typically, preferred interpolation scope is 1.0-3 quality %.Yet it should be understood that and prevent that the amount of separating out required adulterant out of control from will be the feature of the polycrystalline diamond stone composite material that will prepare.Therefore can reckon with that different composites will have the different optimum addn levels in these relative broad ranges.Find that working as the WC particle number is every gram diamond 10
8-10
10During individual particle, produce best WC doped level for polycrystalline diamond stone material (PCD of the present invention).Most preferred scope is in 10
9Magnitude (is every gram diamond particles 1 * 10
9To 9.9 * 10
9Individual particle).When numbers of particles far below every gram diamond about 1 * 10
8During individual particle, the homogenization of the process of then mixing is not effectively best.
Further preferably, tungsten carbide particle is thin as much as possible, makes each particle serve as effective but stable adulterant center, and does not significantly hinder the diamond sintering process.Preferably, the average particle size particle size that is incorporated into the WC in the diamond matrix is no more than 1 μ m; And more preferably no more than 0.75 μ m.Can reckon with that when particle size becomes meticulous the dissolubility of WC in fused catalyst/solvent can cause the dissolving fully of significant number particle.At this moment the doping effect can be subjected to remarkable infringement.Even in preferable range of the present invention, can reckon with that in the described particle some can be partly dissolved, yet this is alleviated by the saturated largely tungsten that contains from substrate carbides of fused catalyst/solvent solution.
Not necessarily require carbide particle is incorporated in the whole polycrystalline diamond stone composite material.When only when directly the composite in the zone of substrate interface is doped with carbide particle, also have recognized that big benefit.Therefore in form of the present invention, powder composition will form the zone and the diamond layer of direct adjoining substrate interface, and optional adhesive with fine-grained form places on the powder composition mutually.Yet, tend to especially form in some situations of remarkable carbide precipitate at composite layer, can require the polycrystalline diamond stone composite material of all or major part to mix.For the easiness of making, also can mix by preferably whole composites.
In order to make desired structure of the present invention be different from those structures that institute's representative observation is arrived in similar briquetting known in the art, must consider the homogenization of this doping to the overall distribution of carbide in final sintering microscopic structure.As previously discussed, the distribution of carbide phase typically occurs in uncontrollable and random mode in whole macroscopical PCD layer in the unadulterated PCD briquetting.To exist some to demonstrate the zone that minimum or invisible carbide is separated out; With other zone that can easily observe the big remarkable defective of carbide base.In the briquetting of lower (being typically suboptimum) sintering temperature, do not observe carbide at all and separate out.
Composite of the present invention has even or class squamous (similar-scaled) distribution in tungsten carbide phase particulate characteristic ground in final microscopic structure.Do not show the big limiting value of carbide granules crystallite dimension, but near the Size Distribution of carbide phase characteristic ground mean value is narrow, it is thin itself tending to the typical case.Carry out normalization with respect to population mean or mean value, the available standards deviation quantizes the degree in a narrow margin of this distribution with the statistics term.The standard deviation that the feature of composite of the present invention therefore is carbide (WC) phase crystallite dimension (representing by equivalent diameter) preferably less than 1, be more preferably less than 0.9 and most preferably less than 0.8.Stride from 0.1 average WC phase grain size range and observe these values up to 1.5 μ m.Typically, observing the prior art polycrystalline diamond abrasive compacts with similar average WC grain size has and substantially exceeds 1.0 relative standard deviation.
By the many collection images in the SEM photographs are carried out statistical appraisal, concentrate on the measurement of on the PCD layer resulting composite being carried out WC phase crystallite dimension.Use the normal image analytical technology, in these images, separate the WC phase crystal grain (using EM to be easy to) in the final microscopic structure its remainder differentiation with microscopic structure.Measure the mutually shared gross area of WC; And get the cumulative volume % that this area % is equivalent to the one or more WC phases that exist in the microscopic structure.
By being incorporated into the WC in the diamond powder mixture as adulterant and stemming from the combination of the WC (its precipitate into these adulterant particles or on) of base material near, determine the mean value of the volume % of the WC that exists in the structure of the present invention.In the prior art cutter, the typical case can observe two kinds of different numerical value groups (population) of WC content.Have those that almost do not have significantly total WC content, promptly wherein WC content is lower than 0.05 volume % or significantly is lower than 0.1 volume % really; Surpass those of this threshold value with WC volume %.Typically, having those of total WC carbide content of minimizing will can be by best sintering; And just WC content surpass 0.1 volume % those be subjected to a large amount of defectives that preamble discusses and form.Structure of the present invention will typically have the WC level that surpasses 0.05 volume % and more typically have the WC level that surpasses 0.1 volume %.
By each independent crystal grain estimation equivalent circle on size or area of discerning is measured the size of WC grain in microscopic structure.Then statistical appraisal these the circle total distributed.The indicative variable of choosing is the diameter of this " equivalent circular ", is called equivalent diameter.Determine arithmetic mean value and standard deviation by the distribution of these diameters then.By in each situation, described standard deviation value being calculated relative or normalized standard deviation value divided by mean value.Typically, choose 1000 times to 2000 times the enlargement ratio level sign property ground performance PCD structure that the present invention paid close attention to, wherein average diamond grain size is that sub-micron is to tens of microns sizes.
To the present invention be described by following non-limiting embodiment now.
Embodiment 1
Sample 1A-introduces WC by mixed grinding (admill)
In planetary ball mill, under typical diamond powder mixture preparation condition, use the WC abrading-ball that multimodal diamond dust and the 1 quality % cobalt dust of average grain size for about 15 μ m ground together.Grinding condition is monitored,, thereby allow WC is joined in the mixture with the aggregate level of 0.7 quality % in final diamond matrix so that make the erosion maximization of WC abrasive media.The size of the WC fragment of Yin Ruing is typically less than 0.5 μ m by this way.Under typical pressure and temperature condition, this mixture of powders is sintered on the standard cemented WC base material, so that preparation is attached to the polycrystalline diamond layer of this base material.In following table 1, be sample A with the gained sample marker.
Sample 1B-introduces WC by mixing
Do not exist under any WC abrasive media, under typical diamond powder mixture preparation condition, the preparation average grain size is the multimodal diamond dust of about 15 μ m and the cobalt dust with 1 quality % in high-shear mixer.The particulate WC powder is joined in this mixture so that obtain the level of 0.7 quality % in final diamond matrix.The size of the WC fragment of Yin Ruing typically is 0.35-0.7 μ m by this way.Under typical pressure and temperature condition, this mixture of powders is sintered on the standard cemented WC base material, so that preparation is attached to the polycrystalline diamond layer of this base material.In following table 1, be sample B with the gained sample marker.
The comparative sample of sample C-by being mixed with
Do not exist under any WC abrasive media, under typical diamond powder mixture preparation condition, the preparation average grain size is the multimodal diamond dust of about 15 μ m and has 1 quality % cobalt dust in high-shear mixer.Under typical pressure and temperature condition, this mixture of powders is sintered on the standard cemented WC base material, so that preparation is attached to the polycrystalline diamond layer of this base material.In following table 1, be sample C with the gained sample marker.
Sample A to C is all analyzed to determine the uniformity of tungsten carbide material in the polycrystalline diamond layer of each sample by above-mentioned.The results are shown in Table 1.
Table 1
By above-mentioned it should be noted that according to the WC grain size of sample A of the present invention and B with respect to standard deviation much smaller than the sample C that uses the art methods preparation.
When producing a large amount of (bulk quantity) PCD material according to the composition of sample 1A, 1B and 1C then, observing carbide in the material that 1A and 1B produce to separate out the reduction of number of defects purpose very obvious by forming.For identical synthesis condition, the level of the defective in the doped samples C section bar material is not in the material of the present invention (sample A and Type B material) five times high.Defective has much bigger yardstick in addition in dopant material not.
Embodiment 2
Sample 2A-introduces WC by mixed grinding
In planetary ball mill, under typical diamond powder mixture preparation condition, use the WC abrading-ball that multimodal diamond dust and the 1 quality % cobalt dust of average grain size for about 6 μ m ground together.Grinding condition is monitored,, thereby allow WC is joined in the mixture with the aggregate level of 1.5 quality % in final diamond matrix so that make the erosion maximization of WC abrasive media.The size of the WC fragment of Yin Ruing is typically less than 0.5 μ m by this way.Under typical pressure and temperature condition, this mixture of powders is sintered on the standard cemented WC base material, so that preparation is attached to the polycrystalline diamond layer of this base material.In following table 2, be sample 2A with the gained sample marker.
The comparative sample of sample 2C-by being mixed with
Do not exist under any WC abrasive media, under typical diamond powder mixture preparation condition, the preparation average grain size is the multimodal diamond dust of about 6 μ m and has 1 quality % cobalt dust in high-shear mixer.Under typical pressure and temperature condition, this mixture of powders is sintered on the standard cemented WC base material, so that preparation is attached to the polycrystalline diamond layer of this base material.In following table 2, be sample 2C with the gained sample marker.
Table 2
When producing a large amount of PCD material according to the composition of sample 2A and 2C then, observing carbide in the material that 2A produces and separate out the number of defects purpose and significantly reduce by forming.For identical synthesis condition, the defect level in the doped samples 2C section bar material is not the twice at least of the defect level of appearance in the material of the present invention (sample 2A section bar material).
Claims (20)
1. comprise diamond particles and adhesive polycrystalline diamond stone composite material mutually, this polycrystalline diamond stone composite material limits a plurality of gaps and described adhesive and is distributed in mutually in the described gap and forms binder pool, it is characterized in that, % by whole composites, described adhesive is middle mutually to be existed above 0.05 volume %, but be not more than the separation tungsten carbide particulate phase of 2 volume %, and this tungsten carbide particulate is evenly distributed in the described composite less than 1 mode with the relative standard deviation of tungsten carbide crystal grain size, and described tungsten carbide crystal grain size is represented with equivalent diameter.
2. according to the polycrystalline diamond stone composite material of claim 1, wherein by the % of whole composites, the tungsten carbide particulate exists with the amount that is not more than 1.5 volume %.
3. according to the polycrystalline diamond stone composite material of claim 1, wherein by the % of whole composites, the tungsten carbide particulate exists with the amount that is not less than 0.1 volume %.
4. according to the polycrystalline diamond stone composite material of claim 1, wherein the relative standard deviation of tungsten carbide crystal grain size is less than 0.9, and described tungsten carbide crystal grain size is represented with equivalent diameter.
5. according to the polycrystalline diamond stone composite material of claim 1, wherein the relative standard deviation of tungsten carbide crystal grain size is less than 0.8, and described tungsten carbide crystal grain size is represented with equivalent diameter.
6. according to the polycrystalline diamond stone composite material of claim 1, wherein diamond particles has the average diamond grain size less than 25 μ m.
7. according to the polycrystalline diamond stone composite material of claim 1, wherein diamond particles has the average diamond grain size less than 20 μ m.
8. according to the polycrystalline diamond stone composite material of claim 1, wherein diamond particles has the average diamond grain size less than 15 μ m.
9. according to the polycrystalline diamond stone composite material of claim 1, wherein adhesive comprises mutually and is used for described adamantine catalyst/solvent.
10. according to the polycrystalline diamond stone composite material of claim 1, wherein adhesive comprises cobalt, nickel, iron mutually or comprises the alloy of one or more these metals.
11. comprise the polycrystalline diamond abrasive compacts according to each polycrystalline diamond stone composite material in the claim 1 to 10, form is the layer that is attached to the cemented carbide substrate surface.
12. according to the polycrystalline diamond abrasive compacts of claim 11, wherein base material is the cemented tungsten carbide base material.
13. make method, comprise making comprising adamantine powder composition, being evenly distributed in the said composition and amount is that the fine granular tungsten carbide particle of the 0.5-5 quality % of said composition stands 1300-1600 ℃ the temperature and the condition of 40-70 kilobar pressure according to each polycrystalline diamond stone composite material in the claim 1 to 10.
14. according to the method for claim 13, wherein powder composition comprises the adhesive of fine-grained form.
15. according to the method for claim 13, wherein tungsten carbide particle exists with the amount of the 1.0-3.0 quality % of composition.
16. according to the method for claim 13, wherein tungsten carbide particle has the size less than 1 μ m.
17. according to the method for claim 13, wherein tungsten carbide particle has the size less than 0.75 μ m.
18., wherein powder composition is placed on the surface of cemented carbide substrate according to the method for claim 13.
19. according to the method for claim 18, wherein cemented carbide substrate is the cemented tungsten carbide base material.
20. according to the method for claim 18, wherein powder composition forms the zone of adjoining substrate surface, described powder composition is positioned on the described substrate surface, and the layer of diamond particles is positioned on the described powder composition.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ZA2006/09073 | 2006-10-31 | ||
| ZA200609073 | 2006-10-31 | ||
| PCT/IB2007/054410 WO2008053431A1 (en) | 2006-10-31 | 2007-10-31 | Polycrystalline diamond abrasive compacts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101522346A CN101522346A (en) | 2009-09-02 |
| CN101522346B true CN101522346B (en) | 2011-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800363446A Active CN101522346B (en) | 2006-10-31 | 2007-10-31 | Polycrystalline diamond abrasive compacts |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20100000158A1 (en) |
| EP (1) | EP2094418A1 (en) |
| JP (1) | JP5331003B2 (en) |
| KR (1) | KR20090086999A (en) |
| CN (1) | CN101522346B (en) |
| RU (1) | RU2466200C2 (en) |
| WO (1) | WO2008053431A1 (en) |
| ZA (1) | ZA200901042B (en) |
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| GB0819257D0 (en) | 2008-10-21 | 2008-11-26 | Element Six Holding Gmbh | Insert for an attack tool |
| US8727042B2 (en) | 2009-09-11 | 2014-05-20 | Baker Hughes Incorporated | Polycrystalline compacts having material disposed in interstitial spaces therein, and cutting elements including such compacts |
| CA2770502C (en) | 2009-08-07 | 2014-10-07 | Baker Hughes Incorporated | Polycrystalline compacts including in-situ nucleated grains, earth-boring tools including such compacts, and methods of forming such compacts and tools |
| WO2011046838A2 (en) | 2009-10-15 | 2011-04-21 | Baker Hughes Incorporated | Polycrystalline compacts including nanoparticulate inclusions, cutting elements and earth-boring tools including such compacts, and methods of forming such compacts |
| TWI613285B (en) * | 2010-09-03 | 2018-02-01 | 聖高拜磨料有限公司 | Bonded abrasive article and method of forming |
| GB201017924D0 (en) * | 2010-10-22 | 2010-12-01 | Element Six Production Pty Ltd | Polycrystalline diamond material |
| EP2638234B1 (en) | 2010-11-08 | 2019-03-06 | Baker Hughes, a GE company, LLC | Polycrystalline compacts including nanoparticulate inclusions, cutting elements and earth-boring tools including such compacts, and methods of forming same |
| CN105189046B (en) | 2012-12-31 | 2017-12-05 | 圣戈班磨料磨具有限公司 | Bonded abrasive articles and method for grinding |
| WO2014106156A1 (en) | 2012-12-31 | 2014-07-03 | Saint-Gobain Abrasives, Inc. | Bonded abrasive article and method of grinding |
| US9102039B2 (en) | 2012-12-31 | 2015-08-11 | Saint-Gobain Abrasives, Inc. | Bonded abrasive article and method of grinding |
| US9833877B2 (en) | 2013-03-31 | 2017-12-05 | Saint-Gobain Abrasives, Inc. | Bonded abrasive article and method of grinding |
| RU2550394C2 (en) * | 2013-07-16 | 2015-05-10 | Федеральное государственное бюджетное учреждение науки Институт общей физики им. А.М. Прохорова Российской академии наук | Polycrystalline diamond composite with dispersion-strengthened additive |
| RU2538551C1 (en) * | 2013-07-19 | 2015-01-10 | Федеральное государственное бюджетное учреждение науки Институт общей физики им. А.М. Прохорова Российской академии наук | Diamond polycrystalline composite material with reinforcing diamond component |
| DE202015009584U1 (en) * | 2014-05-08 | 2018-06-07 | Sumitomo Electric Industries, Ltd. | Polycrystalline diamond body, cutting tool, wear-resistant tool and grinding tool |
| CN104498798B (en) * | 2014-10-18 | 2016-06-15 | 北京中煤矿山工程有限公司 | The broken rock of rolling bores tooth coating material and diamond-Talide composite drill tooth preparation technology |
| KR102020014B1 (en) * | 2015-05-28 | 2019-09-09 | 핼리버튼 에너지 서비시즈 인코퍼레이티드 | Material segregation induction method for manufacturing polycrystalline diamond tools |
| CN104962793B (en) * | 2015-06-23 | 2017-04-26 | 中南钻石有限公司 | Polycrystalline diamond compact with excellent electric conductivity and method for manufacturing polycrystalline diamond compact |
| WO2017106442A1 (en) * | 2015-12-16 | 2017-06-22 | Diamond Innovations, Inc. | Polycrystalline diamond cutters having non-catalytic material addition and methods of making the same |
| US10625798B2 (en) * | 2016-09-09 | 2020-04-21 | Soucy International Inc. | Grouser assembly for endless track systems |
| EP3849734A4 (en) | 2018-09-12 | 2022-07-20 | US Synthetic Corporation | Polycrystalline diamond compact including erosion and corrosion resistant substrate |
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2007
- 2007-10-31 CN CN2007800363446A patent/CN101522346B/en active Active
- 2007-10-31 ZA ZA200901042A patent/ZA200901042B/en unknown
- 2007-10-31 JP JP2009534043A patent/JP5331003B2/en not_active Expired - Fee Related
- 2007-10-31 WO PCT/IB2007/054410 patent/WO2008053431A1/en active Application Filing
- 2007-10-31 KR KR1020097010409A patent/KR20090086999A/en not_active Application Discontinuation
- 2007-10-31 RU RU2009120569/02A patent/RU2466200C2/en not_active IP Right Cessation
- 2007-10-31 US US12/447,779 patent/US20100000158A1/en not_active Abandoned
- 2007-10-31 EP EP07826923A patent/EP2094418A1/en not_active Withdrawn
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101522346A (en) | 2009-09-02 |
| KR20090086999A (en) | 2009-08-14 |
| JP2010508164A (en) | 2010-03-18 |
| RU2466200C2 (en) | 2012-11-10 |
| US20100000158A1 (en) | 2010-01-07 |
| EP2094418A1 (en) | 2009-09-02 |
| JP5331003B2 (en) | 2013-10-30 |
| RU2009120569A (en) | 2010-12-10 |
| WO2008053431A1 (en) | 2008-05-08 |
| ZA200901042B (en) | 2010-05-26 |
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