CN101520813A - Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof - Google Patents
Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof Download PDFInfo
- Publication number
- CN101520813A CN101520813A CN200910080194A CN200910080194A CN101520813A CN 101520813 A CN101520813 A CN 101520813A CN 200910080194 A CN200910080194 A CN 200910080194A CN 200910080194 A CN200910080194 A CN 200910080194A CN 101520813 A CN101520813 A CN 101520813A
- Authority
- CN
- China
- Prior art keywords
- capacitance
- electric capacity
- gallium arsenide
- pin diode
- phi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 60
- 230000007704 transition Effects 0.000 claims abstract description 24
- 238000009792 diffusion process Methods 0.000 claims description 14
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 abstract 9
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Abstract
The invention discloses a nonlinear equivalent circuit of a gallium arsenide PIN diode, which belongs to the technical field of radio frequency/microwave. The equivalent circuit comprises a parasitic resistor, a parasitic inductor, a reciprocal capacitor, a positive capacitor, a transition region capacitor and a switch, wherein the reciprocal capacitor, the positive capacitor and the transition region capacitor are connected in parallel and then are connected with the switch in series; the reciprocal capacitor, the positive capacitor and the transition region capacitor are selected by the switch according to the change of input-signal voltage; and the parasitic resistor and the parasitic inductor are connected into the equivalent circuit in series. The large-signal harmonic balance emulation with the gallium arsenide PIN diode is realized by using the nonlinear equivalent circuit, and the nonlinear equivalent circuit is compatible with the prior main current EDA tool. The invention directly uses a formula to define the nonlinearity of a device, solves the problem that an inactive element is difficult to describe the nonlinearity of the device and can be used as a sub-circuit to be substituted into the circuit with the gallium arsenide PIN diode to carry out harmonic balance emulation.
Description
Technical field
The present invention relates to RF device technology field, relate in particular to a kind of nonlinear equivalent circuit and application thereof of gallium arsenide PIN diode.
Background technology
Gallium arsenide PIN diode has abundant non-linear, and its capacitance is hundreds of pF on cut-in voltage the time, based on diffusion capacitance; Capacitance is very little when anti-inclined to one side, based on space charge region electric capacity.Duty by Microwave Large-Signal control gallium arsenide PIN diode open attitude and oppositely between switch fast, thereby it is abundant non-linear that capacitance generation drastic change is shown.Gallium arsenide PIN diode also is known as step-recovery diode (SRD), and (Step-Recovery-Diode SRD), is mainly used in wideband synchronization signal generator, wideband frequency synthesizer, terahertz emission source etc.
When utilizing the Nonlinear Design circuit of SRD, the large-signal device model is essential accurately.Because the non-linear variation that is mainly derived from the intrinsic region impedance with signal of SRD, thereby the model key of setting up large-signal is the non-linear of how accurate description intrinsic region impedance.
Can extract the non-assertive evidence district impedance parameter of gallium arsenide PIN diode by small-signal model, as contact resistance, P+/N+ district resistance, encapsulation dead resistance, lead-in inductance.These parameter values do not change with signal, can apply mechanically the small-signal parameter value, directly apply to large-signal model.
The gallium arsenide PIN diode nonlinear equivalent circuit of setting up is not only wanted the non-linear of accurate characterizing device, simultaneously will with the eda software compatibility of main flow, can directly apply to the harmonic balance emulation of circuit, and parameter extraction is convenient.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of gallium arsenide PIN diode nonlinear equivalent circuit, comprises the harmonic balance emulation of the circuit of gallium arsenide PIN diode with realization.
Described technical scheme is as follows:
The nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention is made up of dead resistance, stray inductance, reciprocal capacitance, forward electric capacity, zone of transition electric capacity and selector switch; Connect with described selector switch after described reciprocal capacitance, forward electric capacity and the parallel connection of zone of transition electric capacity; Described selector switch is selected between described reciprocal capacitance, forward electric capacity and zone of transition electric capacity according to the variation of described equivalent electrical circuit applied signal voltage; Described dead resistance and stray inductance are connected in the described equivalent electrical circuit.
The nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention,
When the input voltage of described equivalent electrical circuit during greater than cut-in voltage, described selector switch is connected with described forward electric capacity, and the capacitance of described forward electric capacity is determined by the diffusion capacitance of described gallium arsenide PIN diode;
When the input voltage of described equivalent electrical circuit lied prostrate less than zero, described selector switch was connected with described reciprocal capacitance, and the capacitance of described reciprocal capacitance is determined by the charged region electric capacity in described gallium arsenide PIN diode space;
When the input voltage of described equivalent electrical circuit when zero lies prostrate between the cut-in voltage, described selector switch is connected with described zone of transition electric capacity, and the capacitance of described zone of transition electric capacity is determined jointly by the diffusion capacitance and the space charge layer capacitance of described gallium arsenide PIN diode.
The nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention, the capacitance of described reciprocal capacitance, forward electric capacity and zone of transition electric capacity is determined by following formula:
Wherein, Q is that the I district stores electric charge; C
rCapacitance for reciprocal capacitance; C
fCapacitance for forward electric capacity; V is the input voltage value of equivalent electrical circuit; Φ is a cut-in voltage.
The nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention, described dead resistance are described gallium arsenide PIN diode ohmic contact resistance, comprise the P of described gallium arsenide PIN diode
+District and N
+The ohmic contact resistance in district.
The nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention, described stray inductance is a lead-in inductance, comprises the top electrode lead-in wire of described gallium arsenide PIN diode and the inductance of bottom electrode lead-in wire.
The application of the nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention, when the input voltage of described equivalent electrical circuit during greater than cut-in voltage, described selector switch is connected with described forward electric capacity, and the capacitance of described forward electric capacity is determined by the diffusion capacitance of described gallium arsenide PIN diode;
When the input voltage of described equivalent electrical circuit lied prostrate less than zero, described selector switch was connected with described reciprocal capacitance, and the capacitance of described reciprocal capacitance is determined by the charged region electric capacity in described gallium arsenide PIN diode space;
When the input voltage of described equivalent electrical circuit when zero lies prostrate between the cut-in voltage, described selector switch is connected with described zone of transition electric capacity, and the capacitance of described zone of transition electric capacity is determined jointly by the diffusion capacitance and the space charge layer capacitance of described gallium arsenide PIN diode.
The application of the nonlinear equivalent circuit of gallium arsenide PIN diode of the present invention, the capacitance of described reciprocal capacitance, forward electric capacity and zone of transition electric capacity is determined by following formula:
Wherein, Q is that the I district stores electric charge; C
rCapacitance for reciprocal capacitance; C
fCapacitance for forward electric capacity; V is the input voltage value of equivalent electrical circuit; Φ is a cut-in voltage.
The beneficial effect of technical scheme provided by the invention is:
The nonlinear equivalent circuit of this gallium arsenide PIN diode provided by the invention and application, the variation that the device duty takes place large-signal has been described, be embodied on electric capacity non-linear, electric capacity shows as different capacitances under three kinds of states, makes device produce abundant high order harmonic.Adopt SDD in Agilent-ADS, to carry out equivalent electrical circuit emulation, directly use the non-linear of formula definition device, solved passive element and be difficult to the nonlinear problem of outlines device, can be used as the circuit that the electronic circuit substitution comprises gallium arsenide PIN diode and carry out harmonic balance emulation.By comparative experiments result and equivalent electrical circuit simulation result, find the accurately actual characteristic of identical device of this circuit.
Description of drawings
Fig. 1 is the nonlinear equivalent circuit figure of gallium arsenide PIN diode provided by the invention;
Fig. 2 is the I district charge carrier distribution curve under the only DC current control;
Fig. 3 is the I district charge carrier distribution curve under the only Microwave Large-Signal effect;
Fig. 4 is an I district charge carrier distribution curve under direct current and the microwave signal acting in conjunction;
Fig. 5 is electric charge-voltage relationship figure;
Fig. 6 is for representing the nonlinear equivalent circuit of the gallium arsenide PIN diode of ternary electric capacity with SDD;
Fig. 7 is that zero inclined to one side test and power input-output power graph of a relation of equivalent electrical circuit emulation compare;
Fig. 8 is-test of 3V and the power input of equivalent electrical circuit emulation-output power graph of a relation comparison;
Fig. 9 is that power input-output power graph of a relation of test and the equivalent electrical circuit emulation of 1.2V compares;
Figure 10 measures the monitoring figure of ohmic contact resistance for Transmission line method;
Figure 11 measures the test result and the matched curve of ohmic contact resistance for Transmission line method.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Study the non-linear of gallium arsenide PIN diode, carrying out under big injection state, it is very big promptly to import microwave signal, and big to when not being in the state of direct current biasing, only microwave signal also can drive its operate as normal.Big injection state is the research gallium arsenide PIN diode down, only considers the charge storage effect in its intrinsic region (I district), and ignores the influence in other zones, as the impedance and the spurious impedance of ohmic contact resistance, heavily doped region resistance, surface leakage conductance, knot.Research method, at first the qualitative analysis charge carrier distributes, and secondly obtains accurate carrier concentration with diffusion equation.
When the PIN pipe only transmitted direct current signal, heavily doped region injected electronics and hole to the I district, and concentration is far above I district equilbrium carrier concentration.The boundary carrier concentration is the highest in the I district, and on inner some cross sections, I district, carrier concentration is minimum, and the concentration minimum is higher than or equals the equilbrium carrier concentration in I district itself, as shown in Figure 2.Because the I district is very low to the minority carrier density that heavily doped region injects, the compound I district that mainly occurs in of charge carrier.The electronics in the hole in P+ district and N+ district was both relevant with electric field to the diffusion in I district, and was simultaneously also relevant with concentration gradient.
Drive gallium arsenide PIN diode as enough big microwave signal, when being enough to make its operate as normal, the carrier concentration of I district boundary is set up by diffusion, but the decay of the concentration of boundary is very fast, and signal frequency is high more, and then the decay of the concentration on border, I district is fast more.In other zones, I district, carrier concentration remains unchanged, and still is the equilbrium carrier concentration in I district itself, as shown in Figure 3.Microwave signal changes in time, but the CONCENTRATION DISTRIBUTION in I district is constant.The transmission of microwave signal is by the vibration realizing of charge carrier on its mean place.At this moment, compound by charge carrier as long as there is DC channel, DC current still can flow through gallium arsenide PIN diode.Since under the big injection state, I district boundary, i.e. and the carrier concentration at the knot place carrier concentration inner far above the I district, thereby knot is equivalent to electrical short, can ignore the impedance of knot under big injection state.
When direct current and microwave signal drove gallium arsenide PIN diode jointly, direct current signal increased the electric charge in entire I district uniformly, and microwave signal only improves the carrier concentration on border, I district, did not change the inner carrier concentration in I district, as shown in Figure 4.
By the Modulation analysis of above-mentioned large-signal to the I district electric charge (impedance) of gallium arsenide PIN diode, as seen, the carrier concentration in I district is mainly determined by direct current biasing under big the injection, thereby resistance is linear.Under the acting in conjunction of direct current and external signal, when total input voltage during greater than cut-in voltage, the I district is full of charge carrier, and resistance is very little, and electric capacity is based on diffusion capacitance, and capacitance is very big; When total input voltage less than zero the time, I district carrier concentration is low, resistance value is very big, is equivalent to open circuit, electric capacity is based on space charge region electric capacity, capacitance is very little; When total input voltage when zero lies prostrate between the cut-in voltage, resistance value is still very big, and capacitance is made of jointly diffusion capacitance and space charge region electric capacity.
Owing to add the non-linear modulation of large-signal to electric capacity, it is abundant non-linear that device is shown.From device electric charge limit and analysis can clearly find the variation of capacitance.As shown in Figure 5, input voltage is less than zero the time, and electric charge-voltage relationship shows as linear relationship, and slope is very little; Input voltage is during greater than cut-in voltage, and electric charge-voltage relationship shows as the linear relationship of big slope; Input voltage is between zero volt and cut-in voltage the time, and the slope of electric charge-voltage shows to become greatly and gradually with voltage and raises.The slope of electric charge-voltage relationship is explained from physical significance and promptly be can be regarded as capacitance.As seen, capacitance changes with input voltage, and concrete charge voltage relational expression is seen formula (1).
Wherein, Q is that the I district stores electric charge, C
rBe reciprocal capacitance value, C
fBe the forward capacitance, v is a magnitude of voltage, and Φ is a cut-in voltage.
According to above-mentioned analysis, can obtain gallium arsenide PIN diode equivalent electrical circuit of the present invention.This equivalence circuit is made up of dead resistance, stray inductance, reciprocal capacitance, forward electric capacity, zone of transition electric capacity and selector switch; Connect with selector switch again after reciprocal capacitance, forward electric capacity and the parallel connection of zone of transition electric capacity; This selector switch is selected between reciprocal capacitance, forward electric capacity and zone of transition electric capacity according to the variation of equivalent electrical circuit applied signal voltage; In addition, dead resistance and stray inductance are connected in the equivalent electrical circuit.
According to the principle of work of gallium arsenide PIN diode, select between ternary electric capacity with switch, thus the nonlinear relationship of description capacitance-voltage.Simultaneously, the forward differential resistance when adopting forward conduction resistance in parallel to represent the gallium arsenide PIN diode conducting, the forward resistance value was very not big when device was opened, and showed as approximate opening circuit, and this forward resistance value is controlled by direct current biasing only, and is irrelevant with external signal.
Other parameters in the equivalent electrical circuit are extracted by small-signal equivalent circuit as parasitic resistance values and stray inductance value, and these parameter values and external signal are irrelevant.
About the sign of ternary electric capacity,, need describe with the equation editing device owing to do not have ready-made components and parts correspondingly in the eda tool of existing main flow.In Agilent-ADS, provide nonlinear element, i.e. symbol definition device Signal-Defined-Device (SDD) based on formula.Comprise more than one port among the SDD, must define the current-voltage relation of each port.In this equivalence circuit, the SDD that has adopted single port sees Fig. 6 to define ternary electric capacity.Because the direct electric current-voltage relationship of electric capacity is beyond expression of words, so the form that equals electric current with electric charge time differential value is represented.Specifically, using weight coefficient is 1 to represent the differential of electric charge, i.e. I[1,1]=Q (_ v1).
In order to verify the accuracy of this equivalence circuit, carried out experiment measuring, respectively direct current be zero partially ,-3V and+1.2V tested power input-output power relation, the cut-in voltage of GaAs PIN diode is 1.1V.Test result and model emulation are contrasted, and the result proves can accurately the coincide actual measured value of device of this equivalence circuit, sees Fig. 7,8,9.
Dead resistance comprises ohmic contact resistance, P+ district resistance, N+ district resistance; Described ohmic contact resistance is used for characterizing the ohmic contact resistance in P+ district and N+ district, and P+ district resistance is used for characterizing the doped resistor in P+ district, and N+ district resistance is used for characterizing the doped resistor in N+ district.Stray inductance is represented lead-in inductance, comprises the inductance of top electrode lead-in wire and bottom electrode lead-in wire, can not ignore when high frequency.
The parameter extraction of dead resistance and stray inductance value adopts the extracting method of linear equivalent circuit, and details are as follows.
Since under high frequency capacitive reactance relatively and induction reactance can ignore, so by the imaginary-part matrix Im{ABCD (1,2) of ABCD parameter } can obtain the value of stray inductance.Network analyzer is measured the scattering parameter (S parameter) of gallium arsenide PIN pipe, and with Agilent-ADS the S parameter is converted into cascade parameter (ABCD parameter), utilizes formula (2) to calculate the stray inductance value.
L＝Im{ABCD(1，2)}/ω (2)
When reality was used, P+ district and N+ district adopted highly doped structure to reduce the wastage, and doping content is 10
19/ cm
-3About, so the resistance of this part can be ignored.The major part of dead resistance is an ohmic contact resistance, and wherein N p type gallium arensidep ohmic contact craft is ripe, and contact resistance value is very low, can ignore; And the ohmic contact resistance rate of P p type gallium arensidep is still bigger, and being needs to consider.Transmission line method is adopted in the measurement of ohmic contact resistance rate, and its measurement pattern as shown in figure 10.Spacing in the monitoring figure between the metal pad is followed successively by 10 μ m, 20 μ m, 30 μ m, 40 μ m and 50 μ m.Measure spacing successively and be the resistance value between the transmission line of 10 μ m, 20 μ m, 30 μ m, 40 μ m and 50 μ m.With the spacing is independent variable, to the resistance value mapping, as shown in figure 11, it is adopted linear fit.It is good to coincide between measurement result and the fit line, shows that ohmic contact characteristic is good.As calculated, obtaining contact resistivity is 1 * 10
-7Ω cm
2
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1, a kind of nonlinear equivalent circuit of gallium arsenide PIN diode is characterized in that, described equivalent electrical circuit is made up of dead resistance, stray inductance, reciprocal capacitance, forward electric capacity, zone of transition electric capacity and selector switch; Connect with described selector switch after described reciprocal capacitance, forward electric capacity and the parallel connection of zone of transition electric capacity; Described selector switch is selected between described reciprocal capacitance, forward electric capacity and zone of transition electric capacity according to the variation of described equivalent electrical circuit applied signal voltage; Described dead resistance and stray inductance are connected in the described equivalent electrical circuit.
2, the nonlinear equivalent circuit of gallium arsenide PIN diode according to claim 1 is characterized in that,
When the input voltage of described equivalent electrical circuit during greater than cut-in voltage, described selector switch is connected with described forward electric capacity, and the capacitance of described forward electric capacity is determined by the diffusion capacitance of described gallium arsenide PIN diode;
When the input voltage of described equivalent electrical circuit lied prostrate less than zero, described selector switch was connected with described reciprocal capacitance, and the capacitance of described reciprocal capacitance is determined by the charged region electric capacity in described gallium arsenide PIN diode space;
When the input voltage of described equivalent electrical circuit when zero lies prostrate between the cut-in voltage, described selector switch is connected with described zone of transition electric capacity, and the capacitance of described zone of transition electric capacity is determined jointly by the diffusion capacitance and the space charge layer capacitance of described gallium arsenide PIN diode.
3, the nonlinear equivalent circuit of gallium arsenide PIN diode according to claim 1 is characterized in that, the capacitance of described reciprocal capacitance, forward electric capacity and zone of transition electric capacity is determined by following formula:
Wherein, Q is that the I district stores electric charge; C
rCapacitance for reciprocal capacitance; C
fCapacitance for forward electric capacity; V is the input voltage value of equivalent electrical circuit; Φ is a cut-in voltage.
4, the nonlinear equivalent circuit of gallium arsenide PIN diode according to claim 1 is characterized in that, described dead resistance is described gallium arsenide PIN diode ohmic contact resistance, comprises the P of described gallium arsenide PIN diode
+District and N
+The ohmic contact resistance in district.
5, the nonlinear equivalent circuit of gallium arsenide PIN diode according to claim 1 is characterized in that, described stray inductance is a lead-in inductance, comprises the top electrode lead-in wire of described gallium arsenide PIN diode and the inductance of bottom electrode lead-in wire.
6, the application of the nonlinear equivalent circuit of the described gallium arsenide PIN diode of claim 1, it is characterized in that, when the input voltage of described equivalent electrical circuit during greater than cut-in voltage, described selector switch is connected with described forward electric capacity, and the capacitance of described forward electric capacity is determined by the diffusion capacitance of described gallium arsenide PIN diode;
When the input voltage of described equivalent electrical circuit lied prostrate less than zero, described selector switch was connected with described reciprocal capacitance, and the capacitance of described reciprocal capacitance is determined by the charged region electric capacity in described gallium arsenide PIN diode space;
When the input voltage of described equivalent electrical circuit when zero lies prostrate between the cut-in voltage, described selector switch is connected with described zone of transition electric capacity, and the capacitance of described zone of transition electric capacity is determined jointly by the diffusion capacitance and the space charge layer capacitance of described gallium arsenide PIN diode.
7, the application of the nonlinear equivalent circuit of gallium arsenide PIN diode according to claim 6 is characterized in that, the capacitance of described reciprocal capacitance, forward electric capacity and zone of transition electric capacity is determined by following formula:
Wherein, Q is that the I district stores electric charge; C
rCapacitance for reciprocal capacitance; C
fCapacitance for forward electric capacity; V is the input voltage value of equivalent electrical circuit; Φ is a cut-in voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910080194XA CN101520813B (en) | 2009-03-25 | 2009-03-25 | Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910080194XA CN101520813B (en) | 2009-03-25 | 2009-03-25 | Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101520813A true CN101520813A (en) | 2009-09-02 |
| CN101520813B CN101520813B (en) | 2012-04-18 |
Family
ID=41081399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910080194XA Expired - Fee Related CN101520813B (en) | 2009-03-25 | 2009-03-25 | Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101520813B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101975889A (en) * | 2010-08-11 | 2011-02-16 | 上海宏力半导体制造有限公司 | Method for extracting series resistance value or leakage resistance value of grid of capacitor |
| CN102479263A (en) * | 2010-11-23 | 2012-05-30 | 中国科学院微电子研究所 | Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof |
| CN105468803A (en) * | 2014-09-12 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | Device model parameter extraction method for large signal application |
| CN114567151A (en) * | 2022-02-25 | 2022-05-31 | 中国电子科技集团公司第二十九研究所 | Improvement method of GaAs process driving circuit, switch and chip |
-
2009
- 2009-03-25 CN CN200910080194XA patent/CN101520813B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101975889A (en) * | 2010-08-11 | 2011-02-16 | 上海宏力半导体制造有限公司 | Method for extracting series resistance value or leakage resistance value of grid of capacitor |
| CN102479263A (en) * | 2010-11-23 | 2012-05-30 | 中国科学院微电子研究所 | Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof |
| CN102479263B (en) * | 2010-11-23 | 2013-09-25 | 中国科学院微电子研究所 | Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof |
| CN105468803A (en) * | 2014-09-12 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | Device model parameter extraction method for large signal application |
| CN105468803B (en) * | 2014-09-12 | 2018-07-20 | 上海华虹宏力半导体制造有限公司 | The model parameter extraction method of big signal application |
| CN114567151A (en) * | 2022-02-25 | 2022-05-31 | 中国电子科技集团公司第二十九研究所 | Improvement method of GaAs process driving circuit, switch and chip |
| CN114567151B (en) * | 2022-02-25 | 2023-09-29 | 中国电子科技集团公司第二十九研究所 | GaAs process driving circuit improving method, circuit, switch and chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101520813B (en) | 2012-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101520813B (en) | Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof | |
| CN105956228B (en) | The transistor modeling method of high efficiency switch power-like amplifier | |
| CN110502805A (en) | IGBT physical model statistic property extracting method | |
| CN105844059B (en) | A kind of microwave high-power transistor modeling method | |
| CN103105571A (en) | Simulated measurement method of current characteristics of insulated gate bipolar transistor | |
| CN108896897B (en) | A kind of two end transit time device Steady-state Parameters measuring devices | |
| CN109917192A (en) | The test device of power MOSFET device conducting resistance and output capacitance based on attenuation oscillasion impulse | |
| CN105184032A (en) | Establishing method for improved HBT small-signal equivalent circuit model | |
| CN107636656A (en) | GaN device technological parameter statistical analysis technique based on large signal equivalent circuit model | |
| CN106602858A (en) | IGBT switch instant surge suppression apparatus and method for PWM current converting system | |
| CN111368454A (en) | SiC MOSFET SPICE model establishment method based on bare chip packaging structure | |
| CN104268355A (en) | Gallium arsenide base mixing schottky diode millimeter wave and terahertz spectrum modeling method | |
| CN101382964B (en) | GaAs PIN diode equivalent circuit | |
| Avolio et al. | Waveforms-only based nonlinear de-embedding in active devices | |
| CN110133472B (en) | Non-contact type working parameter measuring method of IGBT chip | |
| CN105279339B (en) | For the IGBT models of electromagnetic interference simulation analysis | |
| CN106886650A (en) | A kind of ultra wide band gallium nitride device small-signal model and its parameter extracting method | |
| Li et al. | Analysis and design of wide-band comb generator based on SRD | |
| Shen et al. | Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation | |
| CN107341305B (en) | Schottky diode accurate modeling method based on millimeter wave ultra-low power application | |
| CN103293383B (en) | Test circuit for series resistance in MOSFET (metal oxide semiconductor field-effect transistor) power devices | |
| CN111881635B (en) | RF avalanche effect modeling method based on Mextram model | |
| CN102136015B (en) | Novel thyristor backward recovery transient model | |
| Hu et al. | Modeling of GaAs multiplier Schottky diode in terahertz band | |
| CN107846193B (en) | A kind of performance test methods of solar battery reverse breakdown three phases |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING CAS MICRO-INVESTMENT MANAGEMENT CO., LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130927 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130927 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Institute of Microelectronics Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
| ASS | Succession or assignment of patent right |
Owner name: ZHONGKE TIDE VENTURE INVESTMENT MANAGEMENT (BEIJIN Free format text: FORMER OWNER: BEIJING CAS MICRO-INVESTMENT MANAGEMENT CO., LTD. Effective date: 20140128 |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 100028 CHAOYANG, BEIJING |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140128 Address after: 100028, Beijing, Chaoyang District, No. 28 West Li, MCC building, 15, 1515 Patentee after: Zhongke venture capital management (Beijing) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120418 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |