CN105468803B - The model parameter extraction method of big signal application - Google Patents
The model parameter extraction method of big signal application Download PDFInfo
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- CN105468803B CN105468803B CN201410464729.4A CN201410464729A CN105468803B CN 105468803 B CN105468803 B CN 105468803B CN 201410464729 A CN201410464729 A CN 201410464729A CN 105468803 B CN105468803 B CN 105468803B
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Abstract
The present invention proposes a kind of model parameter extraction method of big signal application, in carrying out the parameter extraction process under big signal application to device model, adjustment parameter simultaneously, since balance parameters can improve big signal using the simulation curve of lower device model and be influenced on the simulation curve of device model under small-signal applications smaller, therefore, parameter in the case where carrying out big signal application optimizes, and obtains accurate parameter.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of model parameter extraction sides of big signal application
Method.
Background technology
The device model committee (CMC) has had selected a kind of new CMOS transistor model professional standard.The model by
Pennsylvania State University and Philips Electronic Co., Ltd. develop jointly, thus referred to as PSP models.Now, PSP models are taken over holds over several years
Capable BSIM3 and BSIM4 (Berkeley Short-channel IGFET Model, short ditch isolated gate FET model) marks
Standard becomes newest professional standard.
PSP models are a kind of surface potential (surface-potential) models.Compared with other optional models, people
Surface potential model is thought closer to transistor physics behavior, and better prediction can be made with regard to IC performances.Therefore, PSP moulds
Type substitution BSIM models become the new standard of CMOS transistor model.It allows model to gate leakage and quantum mechanical effects
(QME) it takes in, increasingly precise and tiny with CMOS technology, these factors become important increasingly.The supporter of PSP models claims,
The basic physics feature that the model is worked based on CMOS transistor can be worked with the less parameter of more other models.
As a kind of surface potential model, there is no using based on ad hoc hypothesis possessed by voltage model by PSP.So
For physical angle, PSP is a more correct model, is especially operated around zero offset in source electrode and drain electrode,
When either gate bias voltage closes on threshold voltage, situation is even more so.
In the parameter extraction process for carrying out device model, need to carry out parameter extraction for different models.Make device
The simulation curve of model and the simulation curve of setting are close, can just use the parameter like that, carry out actual device manufacture.So
And in the parameter extraction process to device model, often the parameters simulation curve under small-signal applications meets the requirements, big signal
Simulation curve be but deviated, in the adjustment process for carrying out big signal simulation curve, and small-signal simulation curve can be influenced.
Therefore, it how while adjusting big signal simulation curve, avoids influencing small-signal simulation curve, become as people in the art
Member is badly in need of the technical issues of solving.
Invention content
The purpose of the present invention is to provide a kind of model parameter extraction methods of big signal application, can adjust greatly
Small-signal simulation curve is not influenced when signal simulation curve.
In order to achieve the above object, the present invention proposes a kind of model parameter extraction method of big signal application,
The underlying parameter of the device model extracts；
The extraction of the second-order effect parameter of the device model；
The extraction of the ghost effect parameter of the device model；
The parameter extraction of the device model under small-signal applications, medium and small signal are less than 0dBm；
Big signal applies the parameter extraction of the lower device model, and in the case where carrying out big signal application, the parameter of device model carries
During taking, while adjustment parameter, so that big signal is met the requirements using the simulation curve of lower device model, and do not change
The simulation curve of device model under small-signal applications, wherein big signal is more than 0dBm.
Further, the device model is PSP models or SOIPSP models.
Further, the extraction of the ghost effect parameter of the device model includes to diode parasitic capacitance effect, double
The parameter extraction of pole junction transistors parasitic capacitance effect, back segment parasitic capacitance effect and substrate parasitics capacity effect.
Further, the balance parameters are on the influential relevant parameter of same effect.
Further, the balance parameters include CJ and MJ or MUE and THEMU.
Further, the balance parameters are tuned up, are turned down or one tunes up another and turns down simultaneously, keep the amplitude of accommodation one
It causes.
Compared with prior art, the beneficial effects are mainly as follows：Big signal application is being carried out to device model
Under parameter extraction process in, while adjustment parameter applies lower device model since balance parameters can improve big signal
Simulation curve and the simulation curve of device model under small-signal applications is influenced smaller, therefore, carrying out big signal application
Under parameter optimize, obtain accurate parameter.
Description of the drawings
Fig. 1 is the flow chart of the model parameter extraction method of big signal application in one embodiment of the invention.
Specific implementation mode
The model parameter extraction method of the big signal application of the present invention is carried out below in conjunction with schematic diagram more detailed
Description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can change described here
The present invention, and still realize the advantageous effects of the present invention.Therefore, following description should be understood as those skilled in the art
It is widely known, and be not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail well known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related business
Limitation, another embodiment is changed by one embodiment.Additionally, it should think that this development may be complicated and expend
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It is wanted according to following explanation and right
Ask book, advantages and features of the invention that will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Referring to FIG. 1, in the present embodiment, it is proposed that a kind of model parameter extraction method of big signal application, packet
Include step：
S100：The underlying parameter of the device model extracts；
S200：The extraction of the second-order effect parameter of the device model；
S300：The extraction of the ghost effect parameter of the device model；
S400：The input signal of the parameter extraction of the device model under small-signal applications, medium and small signal is less than 0dBm；
S500：Big signal applies the parameter extraction of the lower device model, the device model in the case where carrying out big signal application
In parameter extraction process, while adjustment parameter, so that big signal is met the requirements using the simulation curve of lower device model, and
The simulation curve of device model under small-signal applications is not changed, wherein the input signal of big signal is more than 0dBm.
Specifically, the device model that this implementation proposes is PSP models or SOIPSP models, wherein SOIPSP models are insulation
Silicon PSP models on body, since the silicon fiml of part depletion (or fully- depleted) SOI is very thin, it is easy to accomplish ultra-shallow junctions technology, it can be very well
The short ditch of inhibition and narrow channel effect, and have higher current driving ability, precipitous sub-threshold slope, and eliminate distortion
(kink) numerous characteristics such as effect, particularly suitable for high speed, the application of low-voltage and low-power dissipation super large-scale integration.Therefore, this reality
Example selection is applied to introduce SOIPSP models progress parameter extraction.However, those skilled in the art could be aware that, this
The parameter extracting method that invention proposes applies also for other device models.
In the step s 100, the underlying parameter of SOIPSP models is extracted, such as to the IV and CV of SOIPSP models
Parameter acquired in the adjusting of equal basic properties by adjustment parameter, makes the basic property of SOIPSP reach and wants in this step
After asking, the parameter for keeping the step to obtain, as einer Primargrosse, subsequently to modify and to optimize.
In step s 200, the second-order effect parameter of SOIPSP models is extracted, specifically, the SOIPSP models
Second-order effect include device GIDL (gate leads to let out pole and generates leakage current, Gate Induced Drain Leakage),
IGATE (grid current) and IMPACE (ionization by collision of device inside hot carrier) etc..The second-order effect is that can react
One of performance of device.
In step S300, the parameter of the ghost effect parameter of SOIPSP models is extracted, the SOIPSP models
The extraction of ghost effect parameter include to silicon-on-insulator substrate electricresistance effect (RBODY), parasitic diode capacity effect
(JUNCAP), the parasitic parameter extraction of parasitical bipolar transistor effect (BJT), back segment ghost effect and substrate.Wherein, exist
In SOIPSP models, the parasitic capacitance and back segment capacity effect of substrate can be carried in the underlying parameter to SOIPSP models
It takes and second-order effect parameter extracts synchronous progress.
In step S400, the parameter extraction of SOIPSP models under small-signal applications is carried out, in this step, mainly for
The parameter extraction of SOIPSP models when small-signal applications, wherein the input signal very little of small-signal model, nonlinear device can be with
As linear approximation, the input signal of usual small-signal model is less than 0dBm.
Finished in step S400 adjusting, i.e., under small-signal applications the simulation curve of SOIPSP models meet the requirements and then
The parameter extraction that big signal applies lower SOIPSP models is carried out, the parameter extraction process of SOIPSP in the case where carrying out big signal application
In, while adjustment parameter, so that big signal is met the requirements using the simulation curve of lower SOIPSP models, and do not change small letter
The simulation curve of number lower SOIPSP models of application, the input signal of wherein large-signal model is big, and nonlinear device cannot be done linearly
Change is handled, and the input signal of usual large-signal model is more than 0dBm.
Wherein, the balance parameters are on the influential relevant parameter of same effect, such as to parasitic capacitance effect
Influential one group of relevant parameter.In the present embodiment, the balance parameters include CJ and MJ or MUE and THEMU etc.,
In, parameter CJ and MJ there is certain influence, parameter MUE and THEMU to have to the mobility of device parasitic diode effect
Certain influence.A parameter in independent adjustment parameter can should apply the emulation of lower device model bent by signal greatly
Line exports, while can also influence the simulation curve output of device model under small-signal applications, however, by the long-term examination of inventor
It tests and studies, it is found that balance parameters are adjusted at the same time, such as tune up, turn down or one tunes up another and turns down simultaneously,
It keeps under amplitude of accommodation unanimous circumstances, it is ensured that only change the simulation curve that big signal applies lower device model, without changing
The simulation curve for becoming device model under small-signal applications, so as to obtain more excellent parameter.
Therefore it may only be necessary to ensure at the same adjustment parameter can in the case where not influencing small-signal applications device model emulation
Under the premise of curve, change the simulation curve that big signal applies lower device model, to obtain more excellent parameter.
To sum up, in the model parameter extraction method of big signal application provided in an embodiment of the present invention, to device
Model carries out in the parameter extraction process under big signal is applied, while adjustment parameter, since balance parameters can improve greatly
Signal using lower device model simulation curve and under small-signal applications device model simulation curve influence it is smaller, because
This, the parameter in the case where carrying out big signal application optimizes, and obtains accurate parameter.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical scheme of the present invention, to the invention discloses technical solution and
Technology contents make the variations such as any type of equivalent replacement or modification, belong to the content without departing from technical scheme of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (4)
1. a kind of model parameter extraction method of big signal application, which is characterized in that including step：
The underlying parameter of the device model extracts；
The extraction of the second-order effect parameter of the device model；
The extraction of the ghost effect parameter of the device model；
The input signal of the parameter extraction of the device model under small-signal applications, medium and small signal is less than 0dBm；
Big signal applies the parameter extraction of the lower device model, the parameter extraction mistake of device model in the case where carrying out big signal application
Cheng Zhong, while adjustment parameter make big signal meet the requirements using the simulation curve of lower device model, and do not change small letter
The simulation curve of number lower device model of application, wherein the input signal of big signal is more than 0dBm；Wherein,
The balance parameters are on the influential relevant parameter of same effect, the balance parameters tune up simultaneously, turn down or
One tunes up another and turns down, keeps the amplitude of accommodation consistent.
2. the model parameter extraction method of big signal application as described in claim 1, which is characterized in that the device mould
Type is PSP models or SOIPSP models.
3. the model parameter extraction method of big signal application as described in claim 1, which is characterized in that the device mould
The extraction of the ghost effect parameter of type includes parasitic to parasitic diode capacity effect, parasitical bipolar transistor effect, back segment
The parameter extraction of effect and substrate parasitics effect.
4. the model parameter extraction method of big signal application as described in claim 1, which is characterized in that the balance ginseng
Number includes CJ and MJ or MUE and THEMU.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101520813A (en) * | 2009-03-25 | 2009-09-02 | 中国科学院微电子研究所 | Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof |
| CN102542077A (en) * | 2010-12-15 | 2012-07-04 | 中国科学院微电子研究所 | Parameter extraction method of AlGaN/GaN HEMT small-signal model |
| CN103778281A (en) * | 2014-01-09 | 2014-05-07 | 浙江大学 | GaAs pHEMT pipe core nonlinear model parameter extraction method |
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| US6618837B1 (en) * | 2000-09-14 | 2003-09-09 | Cadence Design Systems, Inc. | MOSFET modeling for IC design accurate for high frequencies |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101520813A (en) * | 2009-03-25 | 2009-09-02 | 中国科学院微电子研究所 | Nonlinear equivalent circuit of gallium arsenide PIN diode and application thereof |
| CN102542077A (en) * | 2010-12-15 | 2012-07-04 | 中国科学院微电子研究所 | Parameter extraction method of AlGaN/GaN HEMT small-signal model |
| CN103778281A (en) * | 2014-01-09 | 2014-05-07 | 浙江大学 | GaAs pHEMT pipe core nonlinear model parameter extraction method |
Non-Patent Citations (1)
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| 场效应晶体管的大信号模型研究;刘林盛;《中国博士学位论文全文数据库 信息科技辑》;20111215;I135-46 * |
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