CN101516565A - Laser processing method - Google Patents

Laser processing method Download PDF

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Publication number
CN101516565A
CN101516565A CNA2007800344801A CN200780034480A CN101516565A CN 101516565 A CN101516565 A CN 101516565A CN A2007800344801 A CNA2007800344801 A CN A2007800344801A CN 200780034480 A CN200780034480 A CN 200780034480A CN 101516565 A CN101516565 A CN 101516565A
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processing object
object thing
cut
laser
zone
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CN101516565B (en
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坂本刚志
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)

Abstract

Six rows of melting regions (131, 132) to be cut starting points are formed inside a silicon wafer (11) along a cut-planned line (5). At the time of forming the melting region (131) closest to the rear surface (21) of a processing object (1), a weakened region (18) is formed on the rear surface (21) along the cut-planned line (5). Since the melting regions (131, 132) are formed inside the silicon wafer (11), particles are prevented from being generated from the melting regions (131, 132). Furthermore, since the weakened region (18) having a prescribed depth is formed on the surface (21) of the processing object (1) along the cut-planned line (5), the processing object (1) can be cut along the cut-planned line (5) with a relatively small external force.

Description

Laser processing
Technical field
The present invention relates to be used for to possess the laser processing of the tabular processing object thing cut-out of semiconductor substrate along the cut-out preset lines.
Background technology
Existing laser processing, known have a kind of like this method: with a face of tabular processing object thing as laser entrance face and to processing object thing irradiating laser, thereby cut-out preset lines along the processing object thing, in mode arranged side by side on the thickness direction of processing object thing, form the multiple row upgrading zone of the starting point of conduct cut-out in the inside of processing object thing, and, in the mode of showing out at another, form in the multiple row upgrading zone upgrading zone (for example, with reference to patent documentation 1) near another face of processing object thing.
Patent documentation 1: TOHKEMY 2005-123329 communique
Summary of the invention
According to above-mentioned laser processing,, also can enough less external force cut off the processing object thing along cutting off preset lines even be under the situation of face of metal film at another face of processing object thing.
Yet, in above-mentioned laser processing and since in the multiple row upgrading zone the upgrading zone near another face of processing object thing show out at another, thereby might produce particle from this upgrading zone.
Therefore, the present invention proposes in view of such problem, and its purpose is, provides a kind of and can prevent that particle from producing and can enough less external force cut off the laser processing of processing object thing along cutting off preset lines.
In order to achieve the above object, laser processing of the present invention, by a face with the tabular processing object thing that possesses semiconductor substrate is laser entrance face and to processing object thing irradiating laser, thereby cut-out preset lines along the processing object thing, in mode arranged side by side on the thickness direction of processing object thing, form the multiple row upgrading zone of the starting point of conduct cut-out in the inside of semiconductor substrate, this laser processing comprises: form in the multiple row upgrading zone the upgrading zone near another face of processing object thing, simultaneously along cutting off preset lines forms the atenuator region of the degree of depth with regulation at another face operation; And form in the multiple row upgrading zone except near the operation in the upgrading zone the upgrading zone of another face.
In this laser processing, along cutting off preset lines, in mode arranged side by side on the thickness direction of processing object thing, form the multiple row upgrading zone of the starting point of conduct cut-out in the inside of semiconductor substrate, but, when the upgrading zone that forms near another face of processing object thing, form the atenuator region of the degree of depth at another face with regulation along cutting off preset lines.So, because each upgrading zone is formed at the inside of semiconductor substrate, thereby can prevent to produce particle from the upgrading zone.And, be formed at another face of processing object thing owing to have the atenuator region of the degree of depth of regulation along cutting off preset lines, thereby can enough less external force cut off the processing object thing along cutting off preset lines.
In addition, by to processing object thing irradiating laser, make to produce multi-photon absorption and other light absorption, thereby form each upgrading zone in the inside of processing object thing.In addition, form in the multiple row upgrading zone near in the operation of the upgrading zone of another face of processing object thing and atenuator region and the formation multiple row upgrading zone except the order near the operation in the upgrading zone the upgrading zone of another face of processing object thing is different.
In the laser processing that the present invention relates to, the face of the metal film that another face is possessed for the processing object thing sometimes.Even in this case, be formed at the face of metal film owing to have the atenuator region of the degree of depth of regulation along cutting off preset lines, thereby also can enough less external force cut off the processing object thing along cutting off preset lines.
Preferably, in the laser processing that the present invention relates to, near the upgrading zone and the atenuator region of another face, form in the mode that is separated from each other.So, owing to be formed at from the inboard of the distance of another face regulation near the upgrading zone of another face of processing object thing, thereby can prevent from more reliably to produce particle from the upgrading zone.
Preferably, in the laser processing that the present invention relates to, atenuator region forms the dotted line shape along cutting off preset lines.So, when external force acts on the processing object thing,, thereby can enough littler external force cut off the processing object thing along cutting off preset lines because stress concentrates on atenuator region easily.
Preferably, laser processing of the present invention comprises that also with multiple row upgrading zone and atenuator region be the starting point of cut-out, cuts off the operation of processing object thing along cutting off preset lines.So, can cut off the processing object thing along cutting off preset lines accurately.
In the laser processing that the present invention relates to, multiple row upgrading zone comprises the melt process zone sometimes.
According to the present invention, can prevent that particle from producing, and can enough less external force cut off the processing object thing along cutting off preset lines.
Description of drawings
Fig. 1 is the plane of the processing object thing in the Laser Processing of the laser processing that relates to of present embodiment.
Fig. 2 is the sectional view along the II-II line of processing object thing shown in Figure 1.
Fig. 3 is the plane of the processing object thing after the Laser Processing of the laser processing that relates to of present embodiment.
Fig. 4 is the sectional view along the IV-IV line of processing object thing shown in Figure 3.
Fig. 5 is the sectional view along the V-V line of processing object thing shown in Figure 3.
Fig. 6 is the plane of the processing object thing that cuts off of the laser processing that related to by present embodiment.
Fig. 7 is the schematic diagram of relation of the size of peak power density in the laser processing that relates to of present embodiment and be full of cracks point.
Fig. 8 is the sectional view of the processing object thing in the 1st operation of the laser processing that relates to of present embodiment.
Fig. 9 is the sectional view of the processing object thing in the 2nd operation of the laser processing that relates to of present embodiment.
Figure 10 is the sectional view of the processing object thing in the 3rd operation of the laser processing that relates to of present embodiment.
Figure 11 is the sectional view of the processing object thing in the 4th operation of the laser processing that relates to of present embodiment.
Figure 12 is the photo in cross section of the part of the Silicon Wafer that cuts off of the laser processing that related to by present embodiment.
Figure 13 is the schematic diagram of relation of the inside transmitance of Wavelength of Laser in the laser processing that relates to of present embodiment and silicon substrate.
Figure 14 is the plane as the processing object thing of the object of the laser processing of present embodiment.
Figure 15 is the partial cross section figure along XV-XV line shown in Figure 14.
Figure 16 is the partial cross section figure of processing object thing that is used to illustrate the laser processing of present embodiment.
Figure 17 is the partial cross section figure of processing object thing that is used to illustrate the laser processing of present embodiment.
Figure 18 is the partial cross section figure of processing object thing that is used to illustrate the laser processing of present embodiment.
Figure 19 is the partial cross section figure of processing object thing that is used to illustrate the laser processing of present embodiment.
Figure 20 is the partial cross section figure along XX-XX line shown in Figure 14.
Figure 21 is the figure of principle that is used to illustrate the laser processing of present embodiment.
Figure 22 is the partial cross section figure along XX-XX line shown in Figure 14.
Symbol description
1. processing object thing; 3. surperficial (face); 5. cut-out preset lines; 11. Silicon Wafer (semiconductor substrate); 13 1, 13 2. melt process zone (upgrading zone); 17. metal film; 18. atenuator region; The back side 21. (another face); L. laser.
The specific embodiment
Below, with reference to accompanying drawing, explain preferred embodiment of the present invention.In the laser processing of present embodiment, for the inside at the processing object thing forms the upgrading zone, the phenomenon of having utilized multi-photon to absorb.Therefore, at first explanation utilizes multi-photon to absorb to form the laser processing in upgrading zone.
If the energy h υ of photon is less than band gap (band gap) E of the absorption of material G, then optically transparent.So producing the condition that absorbs on material is h υ＞E GBut, even optically transparent, if but the intensity of laser is very big, then at nh υ＞E GCondition (n=2,3,4 ...) under, also on material, produce absorption.This phenomenon is called as multi-photon and absorbs.Under the situation of impulse wave (pulse wave), the intensity of laser is by the peak power density (W/cm of the focal point of laser 2) decision, for example, be 1 * 10 at peak power density 8(W/cm 2) under the above condition, produce multi-photon and absorb.Peak power density is obtained by (energy of a pulse of the laser on the focal point) ÷ (the bundle spot sectional area * pulse width of laser).In addition, under the situation of continuous wave, the intensity of laser is by the electric-field intensity (W/cm of the focal point of laser 2) decision.
With reference to Fig. 1～6, the principle of the laser processing that the present embodiment of utilizing this multi-photon to absorb relates to is described.As shown in Figure 1, on the surface 3 of the processing object thing 1 of wafer-shaped (tabular), exist the cut-out preset lines 5 that is used to cut off processing object thing 1.Cut off the imaginary line that preset lines 5 is extended for linearity.In the laser processing that present embodiment relates to, as shown in Figure 2, under the condition that produces the multi-photon absorption,, form upgrading zone 7 with the inside and the irradiating laser L of focal point P in alignment with processing object thing 1.And focal point P is the place of laser L optically focused.In addition, cut off preset lines 5 and be not limited to linearity, can be curve-like, also be not limited to imaginary line, can be the actual line that draws on processing object thing 1.
Then, relatively move along cutting off preset lines 5 (being the arrow A direction of Fig. 1) by making laser L, thereby focal point P is moved along cutting off preset lines 5.Thus, shown in Fig. 3～5, upgrading zone 7 is formed at processing object thing 1 inside along cutting off preset lines 5, and this upgrading zone 7 becomes cut-out starting area 8.At this, cut off starting area 8 and be meant when cutting off processing object thing 1 zone as the starting point of cutting off (fracture).This cuts off starting area 8, forms continuously by upgrading zone 7 sometimes, forms intermittently by upgrading zone 7 sometimes.
The laser processing that present embodiment relates to not is to absorb laser L by processing object thing 1 to make 1 heating of processing object thing and form upgrading zone 7.But make laser L see through processing object thing 1, and produce multi-photon in the inside of processing object thing 1 and absorb, form upgrading zone 7.So laser L is absorbed on the surface 3 of processing object thing 1 hardly, thereby the surface 3 not fusions of processing object thing 1.
If form in the inside of processing object thing 1 and to cut off starting area 8, then be easy to generate fracture as starting point with this cut-outs starting area 8, thereby as shown in Figure 6, can enough less power cut-out processing object things 1.So, can on the surface 3 of processing object thing 1, not produce unnecessary fracture and just cut off processing object thing 1 accurately.
For cut off the cut-out of starting area 8 with this, can consider two kinds of following situations as the processing object thing 1 of starting point.A kind of situation is, after forming cut-out starting area 8, by applying artificial power to processing object thing 1, is that starting point ruptures thereby make processing object thing 1 to cut off starting area 8, cuts off processing object thing 1.This is the cut-out when big of the thickness of for example processing object thing 1.Apply artificial power and for example be meant along the cut-out starting area 8 of processing object thing 1 and apply bending stress or shear stress,, thereby produce thermal stress perhaps by giving temperature difference to processing object thing 1 to processing object thing 1.Another kind of situation is, cuts off starting area 8 by forming, thereby should cut off starting area 8 as starting point, ruptures naturally to the cross-wise direction (thickness direction) of processing object thing 1, and the result cuts off processing object thing 1.This is under the less situation of the thickness of for example processing object thing 1, become possibility by forming cut-out starting area 8 by 1 row upgrading zone 7, under the bigger situation of the thickness of processing object thing 1, become possibility by forming cut-out starting area 8 by the multiple row upgrading zone 7 that on thickness direction, forms.And, under this situation about rupturing naturally, the place that is cutting off, fracture can not arrive in advance and not be formed with on the surface 3 of the corresponding part in position of cutting off starting area 8, can only cut off and the corresponding part in position that is formed with cut-out starting area 8, thereby can control cut-out well.In recent years, because the thickness of processing object things 1 such as Silicon Wafer has the tendency of attenuation, thereby this controlled good cut-off method is very effective.
In the laser processing that present embodiment relates to, there is the situation of following (1)～(3) in the upgrading zone.
(1) the upgrading zone is the situation that comprises the polygonal area of one or more be full of cracks (crack)
With focal point in alignment with processing object thing (for example, glass or by LiTaO 3The piezoelectric that forms) inside, the electric-field intensity on focal point is 1 * 10 8(W/cm 2) above and pulse width is under the following condition of 1 μ s, irradiating laser.The size of this pulse width is unnecessary damage not to be caused on the surface of processing object thing when producing the multi-photon absorption, and can only form the condition of polygonal area in the inside of processing object thing.Thus, produce the phenomenon that absorbs the optical damage that causes because of multi-photon in the inside of processing object thing.This optical damage is brought out thermal deformation in the inside of processing object thing, thereby is formed with polygonal area in the inside of processing object thing.The higher limit of electric-field intensity for example is 1 * 10 12(W/cm 2).The preferred pulse width for example is 1ns～200ns.And, utilize the formation of the polygonal area that multi-photon absorbs, for example be recorded in " utilizing the inner marker of the glass substrate that the Solid State Laser higher harmonics carries out " of the 23rd page～the 28th page of the 45th LASER HEAT working research proceeding (in December, 1998).
The inventor has obtained the relation of the size of electric-field intensity and be full of cracks by experiment.Experiment condition is as follows.
(A) processing object thing: PYREX (registration mark) glass (thickness 700 μ m)
(B) laser
Light source: semiconductor laser excites Nd:YAG laser
Wavelength: 1064nm
Laser point sectional area: 3.14 * 10 -8Cm 2
Starting of oscillation mode: Q-switched pulse
Repetition rate: 100kHz
Pulse width: 30ns
Output: output＜1mJ/ pulse
Laser quality: TEM 00
Polarized light property: linear polarization
(C) optically focused lens
Transmitance to optical maser wavelength: 60%
(D) mounting has the translational speed of the mounting table of processing object thing: 100mm/ second
Wherein, the laser quality is TEM 00Be meant optically focused high and can optically focused to the Wavelength of Laser degree.
Fig. 7 is the figure of the above-mentioned result of experiment of expression.Transverse axis is a peak power density, and laser is pulsed light, thereby electric-field intensity is represented by peak power density.The longitudinal axis is represented the size of the be full of cracks part (be full of cracks point) that the laser by 1 pulse forms in the inside of processing object thing.The be full of cracks point is concentrated to form and is polygonal area.The size of be full of cracks point is meant in the shape of be full of cracks point the size as the part of maximum length.The represented data of bullet among the figure are optically focused with the multiplying power of lens (C) is that 100 times, numerical aperture (NA) are 0.80 situation.On the other hand, the represented data of white round dot among the figure be optically focused with the multiplying power of lens (C) are that 50 times, numerical aperture (NA) are 0.55 situation.Hence one can see that, is 10 from peak power density 11(W/cm 2) about rise, produce the be full of cracks point in the inside of processing object thing, along with peak power density becomes big, it is big that the be full of cracks point also becomes.
Below, with reference to Fig. 8～Figure 11, illustrate by forming polygonal area and cut off the mechanism of processing object thing.As shown in Figure 8, under the condition that produces the multi-photon absorption,, form polygonal area 9 in inside along cutting off preset lines with the inside and the irradiating laser L of focal point P in alignment with processing object thing 1.Polygonal area 9 is the zones that comprise one or more be full of cracks.So the polygonal area 9 that forms becomes the cut-out starting area.As shown in Figure 9, be starting point (that is being starting point) with polygonal area 9 to cut off the starting area, the be full of cracks further growth, as shown in figure 10, be full of cracks arrives the surface 3 and the back side 21 of processing object thing 1, as shown in figure 11, cut off processing object thing 1 by 1 fracture of processing object thing.Arrive the surface 3 of processing object thing 1 and the be full of cracks at the back side 21, the situation of self-sow is arranged, also have by applying the situation that power is grown to processing object thing 1.
(2) the upgrading zone is the situation in melt process zone
With the inside of focal point in alignment with processing object thing (for example, being similar to the semi-conducting material of silicon), the electric-field intensity on focal point is 1 * 10 8(W/cm 2) above and pulse width is under the following condition of 1 μ s, irradiating laser.Thus, the inside of processing object thing is heated partly because of multi-photon absorbs.By this heating, be formed with the melt process zone in the inside of processing object thing.The melt process zone is meant the zone of the zone of solidifying again after the temporary transient fusion, molten condition or the zone of the state that solidifies again from molten condition, also can be meant the zone of phase transformation or the zone that crystal structure changes.In addition, the melt process zone can be meant that also certain structural change in mono-crystalline structures, non crystalline structure, the polycrystalline structure is the zone of another kind of structure.That is, for example be meant from mono-crystalline structures be changed to non crystalline structure the zone, be changed to the zone of polycrystalline structure, be changed to the zone of the structure that comprises non crystalline structure and polycrystalline structure from mono-crystalline structures from mono-crystalline structures.At the processing object thing is under the situation of silicon single crystal structure, and the melt process zone for example is an amorphous silicon structures.The higher limit of electric-field intensity for example is 1 * 10 12(W/cm 2).The preferred pulse width for example is 1ns～200ns.
The inventor has confirmed to be formed with the melt process zone in the inside of Silicon Wafer by experiment.Experiment condition is as follows.
(A) processing object thing: Silicon Wafer (thickness 350 μ m, 4 inches of external diameters)
(B) laser
Light source: semiconductor laser excites Nd:YAG laser
Wavelength: 1064nm
Laser point sectional area: 3.14 * 10 -8Cm 2
Starting of oscillation mode: Q-switched pulse
Repetition rate: 100kHz
Pulse width: 30ns
Output: 20 μ J/ pulses
Laser quality: TEM 00
Polarized light property: linear polarization
(C) optically focused lens
Multiplying power: 50 times
N.A.：0.55
Transmitance to optical maser wavelength: 60%
(D) translational speed of the mounting table of mounting processing object thing: 100mm/ second
Figure 12 utilizes the Laser Processing under the above-mentioned condition and the photo in the cross section of the part of the Silicon Wafer that cuts off.Be formed with melt process zone 13 in the inside of Silicon Wafer 11.And, utilize above-mentioned condition and the size of the thickness direction in the melt process zone 13 that forms is about 100 μ m.
Explanation absorbs the situation that forms melt process zone 13 by multi-photon.Figure 13 is the schematic diagram of relation of transmitance of the inside of Wavelength of Laser and silicon substrate.But, removed the reflex components separately of the face side and the rear side of silicon substrate, only shown inner transmitance.Thickness t for silicon substrate is each situation of 50 μ m, 100 μ m, 200 μ m, 500 μ m, 1000 μ m, has shown above-mentioned relation.
Hence one can see that, for example at Nd:YAG Wavelength of Laser 1064nm place, and when the thickness of silicon substrate is 500 μ m when following, in the inside of silicon substrate, the seeing through more than 80% of laser.Because the thickness of Silicon Wafer 11 shown in Figure 12 is 350 μ m, thereby, because of absorbing the melt process zone 13 that forms, multi-photon is formed near the center of Silicon Wafer 11, i.e. the part of 175 μ m from the surface.Transmitance under this situation if be reference with the Silicon Wafer of thickness 200 μ m, then is more than 90%, thereby laser only absorbed on a small quantity in the inside of Silicon Wafer 11, almost sees through.This means, be not that laser is absorbed in the inside of Silicon Wafer 11 and is formed with melt process zone 13 (promptly in the inside of Silicon Wafer 11, common heating by laser forms the melt process zone), form melt process zone 13 but absorb by multi-photon.Utilize the formation in the melt process zone that multi-photon absorbs, for example be recorded in " utilizing the processing characteristics evaluation of the silicon that picosecond pulse laser carries out " of the 72nd page～the 73rd page of national congress of welding society speech summary the 66th volume (in April, 2000).
And, by to be starting point, produces fracture, and make the surface and the back side of this fracture arrival Silicon Wafer, thereby Silicon Wafer cuts off the most at last towards cross-wise direction by the regional cut-out starting area that forms of melt process.Arrive this fracture at the surface and the back side of Silicon Wafer, the situation of growth is naturally arranged, also have by apply the situation that power is grown to Silicon Wafer.And, when fracture from cutting off the starting area when grow naturally in the surface of Silicon Wafer and the back side, exist any one of following situation: from forming the situation of just growing in the state fracture of fusion in the melt process zone that cuts off the starting area, and when forming the situation of melt process zone from just when the state of fusion solidifies once more, rupturing and grow of cutting off the starting area.But, which kind of situation no matter, the melt process zone only forms in the inside of Silicon Wafer, on the section after the cut-out, as shown in figure 12, only is formed with the melt process zone in inside.Like this, if form the cut-out starting area by the melt process zone, then when cutting off, be difficult for producing departing from the unnecessary fracture of cutting off the starting area line, thereby the control of cutting off becomes easy in the inside of processing object thing.In addition, the formation in melt process zone not only has multi-photon to be absorbed as the situation of reason, and the absorption that other are also arranged is the situation of reason.
(3) the upgrading zone is the situation in variations in refractive index zone
With the inside of focal point in alignment with processing object thing (for example glass), the electric-field intensity on focal point is 1 * 10 8(W/cm 2) above and pulse width is under the following condition of 1ns, irradiating laser.If chopped pulse width greatly, and cause that in the inside of processing object thing multi-photon absorbs, then the energy of multi-photon absorption is not converted into heat energy, and cause in the inside of processing object thing that ioni valence changes, the nonvolatil structural change of crystalization or polarization orientation etc., form the variations in refractive index zone.The higher limit of electric-field intensity for example is 1 * 10 12(W/cm 2).The preferred pulse width for example is below the 1ns, more preferably below the 1ps.Utilize the formation in the variations in refractive index zone that multi-photon absorbs, in for example be recorded in that the 42nd LASER HEAT working research can collection of thesis (in November, 1997) the 105th page～the 111st page " the formation that the femtosecond laser irradiation causes " to the photic structure of glass inside.
More than, the situation that absorbs (1)～(3) in the upgrading zone that forms by multi-photon has been described, yet, if the crystal structure of the processing object thing of consideration wafer-shaped or its cleavage fissure etc., be formed as follows and cut off the starting area, so, can cut off the starting area with this is starting point, cuts off the processing object thing well with littler power and precision.
That is, for the substrate that the single crystal semiconductor by diamond lattic structures such as silicon forms, preferably on the direction of (111) face (the 1st cleavage surface) or (110) face (the 2nd cleavage surface), forming the cut-out starting area.In addition, for the substrate that the III-V compound semiconductor by sphalerite structures such as GaAs forms, preferably on the direction of (110) face, forming the cut-out starting area.And, for sapphire (Al 2O 3) wait the substrate of crystal structure with hexagonal crystal system, be interarea preferably with (0001) face (C face), cut off the starting area on the direction of (1120) face (A face) or (1100) face (M face), forming.
And, if (for example along the direction that should form above-mentioned cut-out starting area, direction along (111) face of monocrystalline silicon substrate) or with the direction that should form the direction quadrature that cuts off the starting area, on substrate, form directional plane (orientation flat), so, by being benchmark, can on substrate, form easily and correctly along the cut-out starting area that should form the direction of cutting off the starting area with this directional plane.
Below, preferred implementation of the present invention is described.
As Figure 14 and shown in Figure 15, processing object thing 1 is so-called MEMS wafer, possesses: thickness be 300 μ m Silicon Wafer (semiconductor substrate) 11, comprise a plurality of function element 15 and be formed at the function element layer 16 on surface of Silicon Wafer 11 and the metal film 17 that is formed at the back side of Silicon Wafer 11.Function element 15 for example is element parts, sensor, actuator, electronic circuit etc., and is a plurality of with rectangular formation with vertical direction along the direction parallel with the directional plane 6 of Silicon Wafer 11.Metal film 17 is formed by gold, and its thickness is 3 μ m.
Will as the processing object thing 1 that constitutes as above-mentioned as following as be cut to each function element 15.At first, as shown in figure 16, at the back side of processing object thing 1 (another face) 21, promptly expansion bands 23 is pasted at the back side of metal film 17.Then, be upside with function element layer 16, processing object thing 1 is fixed on the mounting table (not shown) of laser processing device.
Then, as shown in figure 17, surface (face) 3 with processing object thing 1, the surface that is function element layer 16 is a laser entrance face, with focal point P in alignment with position (inside of Silicon Wafer 11) and irradiating laser L from the surface of Silicon Wafer 11 295 μ m, by moving of mounting table,, focal point P is scanned along to set cancellate cut-out preset lines 5 (with reference to the dotted line of Figure 14) for by the mode of 15,15 of adjacent function element.
So, near the back side 21 of the inside of Silicon Wafer 11, form melt process zones 13 along cutting off preset lines 5 1, simultaneously, on metal film 17, along cutting off preset lines 5 atenuator region 18 that 21 formation have the degree of depth of regulation from the back side.And the lighting condition of the laser under this situation is pulse width 150ns, energy 15 μ J.In addition, above-mentioned " from the position of the surface of Silicon Wafer 11 295 μ m " is meant theoretic " position that focal point P is aimed at " of not considering spherical aberration etc.
Then, as shown in figure 18, surface 3 with processing object thing 1 is a laser entrance face, with inside and the irradiating laser P of focal point P in alignment with Silicon Wafer 11, by moving of mounting table, along to set cancellate cut-out preset lines 5 for, focal point P is scanned by the mode of 15,15 of adjacent function element.
The disconnected preset lines 5 of 1 undercut is carried out being somebody's turn to do for 5 times along the scanning of the focal point P that cuts off preset lines 5, still, by distance in surface that all changes Silicon Wafer 11 and the position that focal point P is aimed at every turn, thereby in melt process zone 13 1And between the surface of Silicon Wafer 11, form 5 row melt process zones 13 along cutting off preset lines 5 2In addition, be formed at the melt process zone 13 of the inside of Silicon Wafer 11 with respect to the disconnected preset lines 5 of 1 undercut 2Columns, change according to the thickness of Silicon Wafer 11 etc., be not limited to 5 row.In addition, in melt process zone 13 1, 13 2, be mixed be full of cracks sometimes.
Then, as shown in figure 19, make expansion bands 23 expansions, with melt process zone 13 1, 13 2And the starting point of atenuator region 18 for cutting off, cut off processing object thing 1 along cutting off preset lines 5.At this moment, because expansion bands 23 expansions, thereby a plurality of semiconductor chips 25 that obtain by cut-out are separated from each other.
As mentioned above, in above-mentioned laser processing, cut off preset lines 5, be formed on 6 row melt process zones 13 arranged side by side on the thickness direction of processing object thing along each 1, 13 2Yet,, in the melt process zone 13 that forms near the back side 21 of processing object thing 1 1The time, form the atenuator region 18 of the degree of depth along cutting off preset lines 5 on 21 overleaf with regulation.At this moment, the back side 21 of processing object thing 1 is the back side of metal film 17, but, even in this case, because having the atenuator region 18 of the degree of depth of regulation is formed on the metal film 17 along cutting off preset lines 5, thereby, also can enough less external force cut off processing object thing 1 accurately along cutting off preset lines 5.
In addition, as shown in figure 20, the melt process zone 13 that the irradiation of the laser L by 1 pulse forms 1With atenuator region 18, under the state that is separated from each other, relative on the thickness direction of processing object thing 1.So, near the melt process zone 13 at the back side 21 of processing object thing 1 1Be formed on the inboard of the distance of 21 regulations from the back side.Therefore, the melt process zone 13 2Certainly much less, can prevent reliably from melt process zone 13 1Produce particle.
And as shown in figure 20, the atenuator region 18 that the irradiation of the laser L by pulse generation forms forms the dotted line shape along cutting off preset lines 5.So when making external force act on processing object thing 1 by expansion bands 23, stress concentrates on atenuator region 18 easily.Therefore, can enough littler external force cut off processing object thing 1 along cutting off preset lines 5.
At this, the inside at Silicon Wafer 11 is formed with melt process zone 13 1, the principle that is formed with atenuator region 18 simultaneously at the back side 21 of processing object thing 1 describes.If make near the back side 21 and irradiating laser Ls of focal point P in alignment with the inside of Silicon Wafer 11, then as shown in figure 21, the influence of spherical aberration makes the optically focused degree deterioration of central ray and ambient light, each light is not concentrated on a bit, and the spot position of each light, especially ambient light departs from optical axis direction.That is, (in Figure 21, be the downside of the surperficial 17a of metal film 17) in the inside of metal film 17, the light optically focused of a part.So at the back side 21 of processing object thing 1, i.e. the back side of metal film 17 is formed with the atenuator region 18 of the degree of depth with regulation.In addition, owing to help the energy on the focal point of a part of light of formation of atenuator region 18 little, thereby expansion bands 23 is subjected to the damage of fusion etc. hardly.
The present invention is not limited to above-mentioned embodiment.
For example, in the above-described embodiment, the melt process zone 13 that the irradiation of the laser L by 1 pulse forms 1With atenuator region 18, under the state that is separated from each other, on the thickness direction of processing object thing 1 relatively, still, also can be as shown in figure 22, the melt process zone 13 that the irradiation of the laser L by 1 pulse forms 1With atenuator region 18 for being in contact with one another or continuum of states.In this case, because in the residual not upgrading zone that the broach shape is arranged, end along the back side 21 sides of the part of cutting off preset lines 5 of processing object thing 1, thereby when external force acted on processing object thing 1, stress concentrated on melt process zone 13 easily 1With atenuator region 18, can enough less external force cut off processing object thing 1 along cutting off preset lines 5.In addition, the illuminate condition of the laser under this situation is pulse width 150ns, energy 15 μ J.
In addition, in the above-described embodiment, the back side 21 of processing object thing 1 is the back side of metal film 17, but processing object thing 1 also can not possess metal film 17, and for example, the back side 21 of processing object thing 1 can be the back side of Silicon Wafer 11.And, function element 15, for example component that also can form etc. for the light-emitting component of the photo detector of the semiconductor working lining that forms by crystalline growth, photodiode etc., laser diode etc. or as circuit.
In addition, in the above-described embodiment, be laser entrance face with the surface 3 of processing object thing 1, still, can be laser entrance face also with the back side 21 of processing object thing 1.At the back side 21 with processing object thing 1 is under the situation of laser entrance face, for example, as following processing object thing 1 is cut to a plurality of semiconductor chips 25.That is, on the surface of function element layer 16, paste boundary belt, under state, will keep the boundary belt of processing object thing 1 to be fixed on the mounting table of laser processing device by boundary belt defencive function element layer 16.Then, be laser entrance face by the back side 21 with processing object thing 1, make focal point P in alignment with Silicon Wafer 11 inner and irradiating laser L, thereby form melt process zone 13 along cutting off preset lines 5 1, 13 2And atenuator region 18.Then, the boundary belt that is fixed in mounting table is separated with processing object thing 1.Then, paste expansion bands 23,, subsequently, make expansion bands 23 expansions, with melt process zone 13 from the sur-face peeling boundary belt of function element layer 16 at the back side 21 of processing object thing 1 1, 13 2And the starting point of atenuator region 18 for cutting off, cut off processing object thing 1 along cutting off preset lines 5, and, will be separated from each other by a plurality of semiconductor chips 25 that cut-out obtains.
In addition, in the above-described embodiment, form melt process zone 13 in the inside of Silicon Wafer 11 1, 13 2, still, also can form the upgrading zone that other is waited in polygonal area or variations in refractive index zone in the inside of the wafer that forms by other materials such as glass or piezoelectrics.
According to the present invention, can prevent that particle from producing, and can enough less external force cut off the processing object thing along cutting off preset lines.

Claims (6)

1. a laser processing is characterized in that,
By a face with the tabular processing object thing that possesses semiconductor substrate is laser entrance face and to described processing object thing irradiating laser, thereby cut-out preset lines along described processing object thing, in mode arranged side by side on the thickness direction of described processing object thing, form the multiple row upgrading zone of the starting point of conduct cut-out in the inside of described semiconductor substrate
Described laser processing comprises:
Form the upgrading zone of another face of the most approaching described processing object thing in the described upgrading of the multiple row zone, form the operation of the atenuator region of the degree of depth simultaneously along described cut-out preset lines at described another face with regulation; And
Form in the described upgrading of the multiple row zone operation in the upgrading zone except the described upgrading zone of the most approaching described another face.
2. laser processing as claimed in claim 1 is characterized in that,
Described another face is the face of the metal film that possessed of described processing object thing.
3. laser processing as claimed in claim 1 is characterized in that,
The most described upgrading zone and the described atenuator region of approaching described another face form in the mode that is separated from each other.
4. laser processing as claimed in claim 1 is characterized in that,
Described atenuator region forms the dotted line shape along described cut-out preset lines.
5. laser processing as claimed in claim 1 is characterized in that,
Comprise that with multiple row described upgrading zone and described atenuator region be the starting point of cut-out, cut off the operation of described processing object thing along described cut-out preset lines.
6. laser processing as claimed in claim 1 is characterized in that,
The described upgrading of multiple row zone comprises the melt process zone.
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