CN101512829A

CN101512829A - High temperature superconducting wires and coils

Info

Publication number: CN101512829A
Application number: CNA200680035136XA
Authority: CN
Inventors: T·科登坎达斯; W·张; 黄一兵; 李晓萍; E·J·西格尔; M·W·鲁皮奇
Original assignee: American Superconductor Corp
Current assignee: American Superconductor Corp
Priority date: 2005-07-29
Filing date: 2006-07-28
Publication date: 2009-08-19
Anticipated expiration: 2026-07-28
Also published as: AU2006346993A8; CA2622384C; RU2008107766A; CN101512829B; JP2009507358A; WO2008036073A3; KR20080064799A; EP1925040A2; AU2006346993A1; ES2553261T3; EP1925040A4; US7781376B2; US20070111893A1; KR101441139B1; AU2006346993B8; WO2008036073A2; CA2622384A1; RU2414769C2; EP1925040B1; AU2006346993B2

Abstract

A superconducting wire includes first and second superconducting layers disposed on one or more substrates in stacked relationship, the first superconducting layer comprising a high temperature superconducting oxide of a first composition and the second superconducting layer comprising a high temperature superconducting layer of a second composition, wherein the first and second compositions are different. The first superconductor layer optionally includes a high temperature superconductor composition selected to provide enhanced critical current (Ic(c)) in the presence of magnetic fields perpendicular to surface of the superconducting layer (H//c). The second superconductor layer optionally includes a high temperature superconductor composition selected to provide enhanced critical current (Ic) in the presence of magnetic fields parallel to surface of the superconducting layer (H//ab).

Description

High temperature super conductive conductor and coil

Related application

This application requires the priority of No. the 60/703815th, the U.S. Provisional Patent Application submitted on July 29th, 2005 according to 35 U.S.C. § 119 (e), the title of this temporary patent application is " high temperature super conductive conductor and a coil (High Temperature Superconducting Wires and Coils ", and its content intact ground is by with reference to being incorporated into this.

This patent application and U.S. Patent application the 11/193rd common unexamined, that submit on July 29th, 2005, No. 262 relevant, the title of the patent application of this common unexamined for " be used for high temperature superconductor wire framework (Architecture For High Temperature Superconductor Wire ", its full content is by with reference to being incorporated into this.

Invention field

The present invention relates generally to high temperature super conductive conductor.The conductor that the present invention is specifically related to apply is also referred to as second generation high temperature superconductor wire or band.The invention still further relates to the superconducting structure that when different magnetic field orientatings, can keep constant current.

Background of invention

The discovery that (has superconductivity being higher than under the liquid nitrogen temperature of 77K) because high-temperature superconductor (HTS) material, people efforts be made so that with the various engineerings application of this HTS developing material.In thin film superconductor equipment and lead, maximum progress is to utilize the oxide superconductor that comprises yttrium, barium, copper and oxygen to make various device, and this oxide superconductor is widely known by the people basic composition is YBa ₂Cu ₃O _7-x(hereinafter being called Y123).Using rare earth element (＂ RE ＂) part to replace also having obtained many progress aspect the Y.The Biaxially-textured superconducting metal oxide of Y123 and so on has obtained high critical current densities in the conductor framework of coating.These leads often are called as second generation HTS lead, be the preferred material of many purposes, these purposes comprise cable, motor, generator, synchronous compensator, transformer, flow restricter and are used for the magnetic system of military affairs, high-energy physics, materials processing, transportation and medical treatment.

The current capacity of HTS material and its crystal arrangement or crystal texture have much relations.The oxide superconductor particle is when arranging, and its c axle is usually perpendicular to the plane at conductive line surfaces place, and the ab plane is parallel to conductive line surfaces usually.Having known that granule boundary that adjacent crystal HTS particle misalignment is caused can become influences the obstacle that supercurrent is passed through, but along with the raising of crystal alignment degree or texturing degree, this obstacle reduces.Therefore, become the product (for example HTS lead) of viable commercial in order to make material, the HTS material must keep highly neat crystal arrangement or crystal texture in quite long distance.Otherwise superconduction current capacity (critical current density) can be restricted.

Have highly neat crystalline phase in the HTS material can manufacture on a large scale and arrange or texture, this is by epitaxial growth layer material on flexible belt shape substrate, makes this material have in its surface that height crystalline phase texture finishes in the mill.When crystal HTS material on this surface during epitaxial growth, the growth of the crystal arrangement of HTS material is with the texture of coupling substrate.In other words, substrate texture provides the template of crystal HTS material epitaxy growth.In addition, substrate has brought structural intergrity for the HTS layer.

Can be with the substrate texturing, so that the template that produces extension HTS layer to be provided.Can use materials such as nickel, copper, silver, iron, silver alloy, nickel alloy, ferroalloy, stainless steel alloy and copper alloy.Can use deformation method that substrate is carried out texturing and handle, for example comprise substrate is rolled method with full annealed.An example of these class methods is auxiliary Biaxially-textured substrate (RABiTS) methods of calendering.In the method, can handle a large amount of metals economically by deformation process and annealing, and realize highly texturedization.

Can deposit on substrate surface or one or more resilient coatings of growing, obtain suitable crystalline phase template, the HTS material is grown on described crystalline phase template.Resilient coating can also provide other benefit: prevent that atom is diffused into the lattice of HTS material from baseplate material, perhaps anti-block is diffused in the baseplate material.This diffusion or " poisoning " can be disturbed crystal arrangement, thereby make the electrical properties variation of HTS material.Resilient coating can also strengthen the adhesiveness between substrate and the HTS layer.And resilient coating has and the good thermal coefficient of expansion of superconductor material coupling.If implement this technology in the commercial Application that lead meets with stresses possibly, this feature is desirable, comes off from substrate because this feature helps to prevent the HTS layer.

Perhaps, can use untextured substrate such as Hastelloy (Hastelloy), deposit textured resilient coating by ion beam assisted depositing (IBAD) or inclination substrate deposition methods such as (ISD).Other resilient coating of epitaxial deposition on IBAD or ISD layer randomly is to provide the final template of epitaxial deposition HTS layer.

Combination by using suitable substrate and one or more resilient coatings is as template, the HTS layer can be splendid crystal arrangement or texture form carry out epitaxial growth, also substrate surface is had good adhesiveness, and can fully stop and poison by atom from substrate.Can comprise metal-organic deposit (MOD) method, metal-organic chemical vapor deposition (MOCVD), pulsed laser deposition (PLD), thermal evaporation or electron beam evaporation or other suitable method by many method deposition HTS layers.At last, protective layer can be added on the multilayer module, help to prevent the pollution and the infringement of outer bound pair HTS layer.Protective layer can be for example silver-colored, can for example be splashed on the HTS layer.

The development of HTS lead is still being sought critical current density, particularly critical current density (the J under highfield and high temperature _cThe improvement of (H, T)).This improvement can realize that this is the basic mechanism that obtains high critical current densities Jc in the HTS material by " anchoring " that improve the superconduction whirlpool.In order to reach the anchoring in the superconductor, local potential energy difference in size should with the size of the normality core (normal core) of the superconduction line of flux or whirlpool as far as possible near-earth be complementary.The size and the coherence length of transversal core are approaching, and in the high-temperature superconductor cuprate, this is of a size of several nanometers, and increase with the temperature rising.Therefore, the defective of nano-scale is introduced in the oxide superconductor particle with the anchoring line of flux, improves the current-carrying character in magnetic field.

The current-carrying character of the layer that the crystalline phase of oxide superconductor is arranged depends on magnetic field orientating.Fig. 1 has shown that (MOD) Y 123 films of the metal-organic deposit on the metal substrate of oxide-buffering are to having the typical field dependence in the magnetic field that is parallel and perpendicular to the membrane plane orientation.At 27K and 57K, for the magnetic field perpendicular to the membrane plane orientation, the Ic value is obviously much lower than the parallel-oriented value that obtains, and has limited the application of Y 123 leads in many coil purposes.The application of many expections is planned in the temperature range of 55-66K, carries out in the magnetic field perpendicular to the membrane plane orientation of 1-3 tesla, and this is the situation that performance can obviously descend.Except the parallel performance and Vertical performance of Y123 lead in magnetic field, it also is important detecting in the magnetic field of intermediate angle performance, as shown in Figure 2.As can be seen from Figure 2, the Y123 film demonstrates small peak at c-axle (0 ° and 180 ° or perpendicular to the plane of Y123 film) usually, by the planar disfigurement that extends or the existence of linear discontinuities (for example twin boundary, grain boundary, a-axialite grain) this small peak is strengthened.

In many application (for example engine and magnetic coil), the HTS lead will make that another regional magnetic field that contacts of magnetic field and lead of a zone contact of lead is different fully in the face of the localized variation of magnetic field orientating.In this class was used, the performance of Y123 lead was not only to be decided by vertical orientated performance, but was decided by the lowest performance that obtains on each magnetic field orientating.Therefore, the HTS lead shows tangible current density and descends in the zone of optimization orientation is departed from magnetic field.

Summary of the invention

Described high-temperature superconductor (HIS) lead, this lead is used in the application and the equipment of the diverse location experience different magnetic field orientation in lead or the equipment.The HTS lead comprises at least two superconducting layers, and each superconducting layer is selected according to its performance on the specific magnetic fields orientation.By selecting the combination of superconducting layer, the HTS lead shows best performance in being parallel to conductive line surfaces (H//ab) or the magnetic field perpendicular to conductive line surfaces (H//c) orientation or intermediate orientation.

In one aspect of the invention, superconductivity wire comprises with stacked relationship and is arranged at least the first superconducting layer and second superconducting layer on one or more substrates.Described first superconducting layer comprises first high temperature superconducting oxide, this first high temperature superconducting oxide is selected, so that the critical current that is parallel to this superconductor layer surface first predetermined than (Ic (ab)/Ic (c)) with perpendicular to the critical current on this superconductor layer surface to be provided, described second superconducting layer comprises the second high-temperature superconductor layer, this superconducting layer is selected, so that the critical current that is parallel to this superconductor layer surface second predetermined than (Ic (ab)/Ic (c)) with perpendicular to the critical current on this superconductor layer surface to be provided.Described first and second superconductor layers are provided at the predetermined total critical current Ic on the magnetic field orientating of selection together.

In one or more execution modes, first or second high-temperature superconductor is selected, there is the critical current (Ic (c)) that strengthens down with the magnetic field that is provided at perpendicular to superconducting layer surface orientation (H//c).Applying 1 tesla or bigger magnetic field, when for example applying about 1 tesla of tesla to 6 magnetic field, first predetermined for Ic (ab)/Ic (c) than being less than or equal to 2.6, less than 2.0, or less than 1.5.

In one or more execution modes, high-temperature superconductor comprises the rare earth-alkaline earth-Cu oxide that comprises two or more rare earth elements (for example one or more in erbium and the holmium).The content of holmium and/or erbium is the 25-150% of rare earth chemistry amount of calculation in rare earth-alkaline earth-Cu oxide.

In one or more execution modes, high-temperature superconductor comprises rare earth-alkaline earth-Cu oxide and at least a two second phase nano particles, and described two second phase nano particles comprise and are positioned at the intragranular containing metal compound of oxide superconductor.

In one or more execution modes, the first or second high-temperature superconductor composition is selected, there is the critical current (Ic) that strengthens down to be provided at the magnetic field that is parallel to superconducting layer surface orientation (H//ab).Applying 1 tesla or bigger magnetic field, when for example applying about 1 tesla of tesla to 6 magnetic field, second predetermined than greater than 2.5 for Ic (ab)/Ic (c), or greater than 3.5, or greater than 5.5.

In one or more execution modes, high-temperature superconductor comprises rare earth-alkaline earth-Cu oxide, and wherein copper and the ratio of alkaline earth are greater than 1.5.

In one or more execution modes, the thickness of first and second superconductor layers is different, the thickness of first and second superconductor layers is selected, to provide predetermined total critical current on the magnetic field orientating of selecting.Also can comprise can strengthen parallel or perpendicular to critical current density in the magnetic field on superconductor layer surface other the layer.

In one or more execution modes, the magnetic field orientating of selection is between 0 ° (H//c) to 90 ° (H//ab).

In one or more execution modes, superconductive wire comprises the element of first coating.The element of described first coating comprises first substrate, be positioned at being used on first substrate supports at least one first resilient coating of first superconducting layer and is positioned at first coat of metal on first superconductor layer.The element of described second coating comprises second substrate, be positioned at being used on second substrate supports at least one second resilient coating of second superconducting layer and is positioned at second coat of metal on second superconductor layer.

In one or more execution modes; described superconductivity wire also comprises intermediary's adhesive phase that the element that makes described first and second coatings between the element of first and second coatings connects at the first and second substrate places, perhaps comprises intermediary's adhesive phase that the element that makes described first and second coatings between the element of first and second coatings connects at the first and second coat of metal places.

The present invention relates to a kind of method of making high-temperature superconductor equipment on the other hand.This method comprises provides one section superconductivity wire, and this superconductivity wire comprises: the first area that comprises high Ic (c) high-temperature superconductor composition; The second area that comprises high Ic (ab) high-temperature superconductor composition; The 3rd zone with the mixture that comprises high Ic (c) high-temperature superconductor composition and high Ic (ab) high-temperature superconductor composition, this section superconductor is arranged in the equipment, make the first area occupy in the equipment position in contact and the magnetic field of high temperature wire vertical orientated (0 °), second area occupies in the equipment position in contact and the magnetic field of high temperature wire parallel-oriented (90 °), and the 3rd zone occupies the position in contact magnetic field of orientation between 0 ° to 90 ° in the equipment.

In one or more execution modes, this equipment is coil; The first area of high temperature superconductor wire is positioned at the end of coil; The second area of high temperature superconductor wire is positioned at the inside of coil; The 3rd zone of high temperature superconductor wire is between first area and second area.

In another aspect of the present invention, a kind of product comprises a kind of superconductivity wire, this superconductivity wire comprises a kind of high temperature superconductor layer, the magnetic field of the diverse location contact different orientation of wherein said product in product, the composition of high temperature superconductor layer changes along its length direction, to adapt to the magnetic field orientating at given position.

In one or more execution modes, described product is a coil, and in the course of the work, the contact of this coil is from being basically parallel to the induced field of superconductor layer plane in the scope that is basically perpendicular to the superconductor layer plane.

In one or more execution modes, the composition of superconductive wire mainly comprises high Ic (c) high-temperature superconductor composition, said composition at the coil meta in the first area that contacts in the course of the work perpendicular to the magnetic field on superconducting layer surface; The composition of superconductive wire mainly comprises high Ic (ab) high-temperature superconductor composition, and said composition is basically parallel in the second area in magnetic field on superconducting layer surface in contact in the course of the work at the coil meta; The composition of superconductive wire comprises the mixture of high Ic (c) high-temperature superconductor composition and high Ic (ab) high-temperature superconductor composition, and this mixture is in the zone in magnetic field at 0-90 ° of angle with the superconducting layer surface in contact in the course of the work at the coil meta.

Be chosen in the superconductor layer that has different current-carrying performances in the different magnetic field, changed along the Ic anisotropy of H//ab and H//c direction.Especially, Ic and associated Jc increase along the H//c orientation, and the Ic capacity does not reduce along H//ab.

" stacked relation " finger element is arranged with the form of piling up, and for example, arranges with the relation of mutual covering, and wherein these layers can be in contact with one another, and one or more intermediary layers perhaps are set between them.Do not advise or hint any stacking order in the literary composition.

Brief Description Of Drawings

Describe the present invention with reference to the following drawings below, these accompanying drawings only are to be used for illustrating the present invention, but not are used for restriction, and identical in the accompanying drawings Reference numeral is represented components identical.

Fig. 1 illustrated under 26K and 75K, for being parallel to (H//ab, Θ=90 °) and perpendicular to the magnetic field of (H//c, Θ=0 °) membrane plane orientation, the variation that the critical current (Ic) of Y-123 HTS lead in magnetic field (H) increases with magnetic field intensity.

Fig. 2 has illustrated that under the 1-7T magnetic field that applies the HTS lead of Fig. 1 is in the field performance (Ic) of middle magnetic field orientating (0 °＜Θ＜90 °).

Fig. 3 has illustrated the Distribution of Magnetic Field around the end turn of solenoid electromagnet.

Fig. 4 is the sectional view with two-layer HTS lead of two superconductor layers, and described superconductor layer has (A) high Ic (ab), (B) high Ic (c), (C) high Ic (ab) and each one deck of Ic (c); Fig. 4 D is the sectional view with the two-layer HTS lead in copper intermediate layer.

Fig. 5 is the sectional view with two-sided HTS lead of two superconductor layers, and described superconductor layer has (A) high Ic (ab), (B) high Ic (c), (C) high Ic (ab) and each one deck of Ic (c).

Fig. 6 is the figure that the superconducting oxide of the various compositions measured under 1T and 3T is done with respect to magnetic field orientating (Θ) at the critical current (Ic) of 75K.

Fig. 7 is the sectional view of two HTS assemblies connecting of the substrate by separately, and wherein first assembly has the superconductor layer of high Ic (ab), and second assembly has second superconducting layer of high Ic (c).

Fig. 8 is the sectional view of two HTS assemblies connecting of the protective layer by separately, wherein first assembly have high Ic (//ab) superconductor layer, second assembly have high Ic (//c) second superconducting layer.

Fig. 9 is that the substrate by separately connects and the sectional view of two HIS assemblies being centered on by conductive structure.

Figure 10 is the illustrating of laminating method that is used to make laminated type HTS lead according to one or more execution modes of the present invention.

Figure 11 is the flow chart of illustrative methods that is used to make the HTS lead according to one or more execution modes of the present invention.

Figure 12 is under 77K and 1 tesla, the figure that the critical current (Ic) of the HTS lead described in the embodiment 3 is done with respect to magnetic field orientating (Θ).

Detailed Description Of The Invention

Fig. 3 has shown the graphics of end turn 300 Distribution of Magnetic Field on every side of solenoid electromagnet 310, this figure confirms that magnetic field intensity (H) (with the arrow indication of different colours, the wherein explanation on the magnetic field intensity of each color correspondence such as Fig. 3 right side) is all obviously different with the diverse location of magnetic field orientating (Θ) (orientation with arrow is represented) in coil.Current-carrying character in specific magnetic fields had been carried out the zones of different of optimized HTS lead at coil, for example showed different electric current (Ic) in each zone in the magnetic field of contact different orientation in the coil, thereby also showed different current density (Jc).The performance of coil is subjected to the restriction of the lowest performance of lead.Therefore, the total current of lead is whole to be reduced, and the lead function only is the part of the current capacity on the whole length of lead.If the performance that can improve lead is the current capacity in good zone not, then can integrally improve the electric current of whole lead.

RE 123 superconducting oxide particles show strong anisotropy usually in magnetic field, the electric current in along the electric current in the magnetic field of oxide particle (ab) plane (along the surface of extension HTS layer) orientation apparently higher than the magnetic field that is orientated perpendicular to the HTS layer.Ic (ab) can be than the high twice of Ic (c), more than three times even ten times; When magnetic field intensity was higher, anisotropy was more obvious.Can reduce the magnetic field anisotropy though observed some HTS material, the raising of Ic (c) is the cost that is reduced to Ic (ab) usually.

In one aspect of the invention, the HTS lead is worked under the total current capacity than the higher percentage of conventional H TS lead.In one or more execution modes, the HTS lead is worked under the situation near the total current load.Can improve current-carrying character by the HTS material that uses zones of different at HTS lead or equipment to have the different performance feature.The HTS material is selected, in the local magnetic field orientation of expection, to obtain optimum performance.Therefore, for example, the HTS lead comprises two superconducting layers, described superconducting layer is selected, to be provided at performance best in the magnetic field that the part applies.This two-layer can any sequence arrangement or pile up.Contact in the zone of externally-applied magnetic field that its orientation is parallel to superconductor layer plane (H//ab or Θ=90 °) at the HTS lead, this is two-layer can to contain a kind of superconductor layer, and the The Nomenclature Composition and Structure of Complexes of the optimum current that can provide along H//ab (be Ic (ab)〉〉 Ic (c)) is provided this superconductor layer.Contact in its orientation zone at the HTS lead perpendicular to the externally-applied magnetic field of superconductor layer plane (H//c or Θ=0 °), this is two-layer can to contain a kind of superconductor layer, and the The Nomenclature Composition and Structure of Complexes of the optimum current (anisotropy that is Ic is lowered to required degree) that can provide along H//c is provided this superconductor layer.Contact its orientation along in the zone of the externally-applied magnetic field of the angle between H//ab and the H//c at the HTS lead, ground floor can contain a kind of superconductor layer, the The Nomenclature Composition and Structure of Complexes that can provide along H//ab optimized current performance is provided this superconductor layer, the second layer can contain a kind of superconductor layer, and the The Nomenclature Composition and Structure of Complexes that can provide along the H//c optimized current is provided this superconductor layer.This two-layer relative thickness is selected, so that the required Ic (c) and the balance of Ic (ab) performance to be provided.The HTS lead provides total critical current of desired properties (for example required current loading).

In one or more execution modes, the HTS lead carries total Ic (c) at least a portion of its length, be at least 80 amperes/centimetre-width; Ic (ab)/Ic (c) is greater than 2.0, perhaps about 2-3; Perhaps Ic (c) be about the 120-150 ampere/centimetre-width, Ic (ab)/Ic (c) perhaps is about 2-3 greater than 2.0; Perhaps Ic (c) be about the 150-180 ampere/centimetre-width, Ic (ab)/Ic (c) perhaps is about 2-3 greater than 2.0.The adding and obtain total Ic (c) of current capability by two superconducting layers.Stipulate that a high Ic (c) can guarantee that the one deck at least in these two layers brings into play superperformance in vertical magnetic field.Regulation Ic (ab) is 2 times or more times of Ic (c), can guarantee that the electric current in the parallel field is higher.Can obtain the total current performance by various combinations, for example with two kinds of lead combinations with medium Ic (c) and medium Ic (ab).The lead and lead combination that perhaps, will have excellent Ic (c) with the still good Ic (ab) of poor Ic (c).

Except the combination that required high Ic (ab) superconductor layer and high Ic (c) superconductor layer are provided, compare with the individual layer superconductive wire, described two-layer HTS lead is also by the few double critical current density that improved of the volume differences that makes the superconductor material in the HTS lead.

In one or more execution modes, described superconducting layer can be coated in the same side of substrate.Fig. 4 A has shown a kind of double-deck HTS lead 400, and a superconducting layer 470 that wherein has the superconducting layer 440 of optimization Ic (ab) and have an optimization Ic (c) all is coated in the same side of substrate 460.Should be noted that size does not provide in proportion in this accompanying drawing and institute's drawings attached subsequently.Described substrate can be textured metal substrate or the metal substrate that comprises the texturing substrate, and thickness is about the 0.05-0.2 millimeter usually.The metal substrate of Ni, Ag or Ni alloy (for example NiW or other Hastelloy (Hastalloy) metal) and so on provides flexible for lead, can make long length and large-area form.Superconducting layer comprises the material that has superperformance after selecting on H//ab or H//c.In addition, superconductor layer is that crystalline phase is arranged, and makes that the ab plane of oxide superconductor is parallel with conductive line surfaces.Each superconducting layer is about 0.5 micron to 2.0 microns usually, even can be bigger.HTS lead shown in Fig. 4 A is generally used for contacting the lead or the conductor area in the magnetic field of intermediate orientation (i.e. 0 °＜Θ＜90 °).

In Θ is about 0 ° conductor area, can use a kind of double-deck HTS lead 410 shown in Fig. 4 B, wherein two superconducting layers 470 with optimization Ic (c) are coated in the same side of substrate 460.Fig. 4 C has shown a kind of double-deck HTS lead 420, and wherein two superconducting layers 420 with optimization Ic (ab) are coated in substrate 460 the same sides.The HTS layer demonstrates optimize performance on H//ab.In order to provide the lead with optimize performance in the equipment in contact different orientation magnetic field, corresponding to the diverse location of different magnetic field orientation, lead can comprise any in these frameworks in equipment.

In one or more execution modes, the HTS lead 430 shown in Fig. 4 D, conductive layer or insulating barrier 490 can be between first and second superconductor layers.Conductor layer provides this electrical connection between two-layer, can be for example copper and silver.Exemplary insulating barrier comprises metal oxide, for example Y ₂O ₃, CuO and CeO ₂Any intermediate layer should be in structure and chemically compatible with the HTS material, and has the texturing crystal structure that for example allows deposition extension HTS layer.The thickness in intermediate layer is generally 20 nanometer to 200 nanometers, and by for example sputter, hydatogenesis or pulse vapour deposition or other conventional method deposition.

In one or more execution modes, superconductor layer is coated in the both sides of substrate respectively.Fig. 5 A has shown a kind of double-deck HTS lead 520, wherein have optimization Ic (//ab) a superconducting layer 440 and have optimization Ic (//superconducting layer 470 c) is coated in the both sides of substrate 460 respectively.Fig. 5 B has shown a kind of double-deck HTS lead 510, wherein have optimization Ic (//two superconducting layers 470 c) are coated in the both sides of substrate 460 respectively.Fig. 5 c has shown a kind of double-deck HTS lead 500, wherein have optimization Ic (//two superconducting layers 440 ab) are coated in the both sides of substrate 460 respectively.Other superconducting layer can improve Ic (c) or Ic (ab) at the either side of substrate.

Comprise one or more resilient coating (not shown) between substrate and superconductor layer and the one or more protective layer (not shown) that cover superconductor at Fig. 4 A-4D and Fig. 5 A-5C and other local HTS lead of describing of specification.In one or more execution modes, resilient coating is formed by electrical insulating material, but also can use electric conducting material.For example, resilient coating is formed by following material: inert metal, the oxide of metal or rare earth element, zirconates, titanate, niobates, nitride, tantalates, aluminate, cuprate, manganate or ruthenate (Al for example ₂O ₃, CeO ₂, Y ₂O ₃, MgO, Gd ₂O ₃, strontium titanates, gadolinium zirconate, the zirconia of stabilized with yttrium oxide, AlN, Si ₃N ₄, LaMnO ₄, La ₂Zr ₂O ₇Or La _2-xCe _xZr ₂O ₇Any known method deposition resilient coating be can use, physics and chemical deposition comprised.Protective layer covers superconducting layer, provides protection to superconducting layer, avoids infringement chemically and mechanically.Protective layer can conduct electricity.This protective layer can be Ag or other inert metal of sputter.

In one or more layer, obtain having the superconductor of high Ic (ab) or high Ic (c) by processing layer optionally.In above-mentioned example, if two superconductor layers are deposited on the same substrate, this operation can be finished by change the processing conditions that forms superconductor in the course of processing.Usually, form superconductor be reflected at and following resilient coating between begin at the interface, superconductor from the interface to outgrowth.Therefore,, be converted to the condition of the high Ic of favourable generation (ab) material, can obtain having the layer structure of different current-carrying character from the condition that helps generating high Ic (c) material at the processing conditions of change midway of the course of processing.Perhaps, can process two kinds of superconductor layers separately, after HTS forms, they be coupled together then to obtain optimize performance.

The exemplary superconductor that has superperformance at H//ab comprises rare earth (RE)-alkaline earth-Cu oxide, and wherein each metal meets stoichiometric proportion basically.Therefore, RE-123 for example, the ratio of its middle rare earth, barium and copper is 1:2:3 basically, have been found that this material with the magnetic field of ab plane parallel orientation in show optimized current.Exemplary oxide superconductor is YBa ₂Cu ₃O _7-δ

The superconductor that is rich in copper or alkaline-earth metal deficiency also shows high Ic (ab).In one or more execution modes, superconducting oxide is a rare-earth barium copper oxides, and wherein the ratio of copper and barium is greater than 1.5.By the amount (ratio that is barium is less than 2.0) of barium in the minimizing oxide superconductor or by increasing the content (ratio that is copper is greater than 3.0) of copper in the RE-123 composition, can obtain above-mentioned Cu:Ba ratio.In some embodiments, oxide superconductor contains excessive copper, and for example the amount of the copper required with preparing stoichiometry RE-123 is compared, at most excessive 5% or at most excessive 10% or at most excessive 20% copper.In other embodiments, oxide superconductor contains not enough barium, and for example the amount of the copper required with preparing stoichiometry RE-123 is compared, at most less thaies 5% or the less than 10% or the barium of less thaies 20% at most at most.

In one or more execution modes, use as a whole or partly in the copper intermediate layer, so that excessive copper to be provided.For example, shown in Fig. 4 A-4D, the copper layer is deposited between two superconductor layers of dual-layer metal line as the intermediate layer.In forming the necessary heat treatment process of oxide superconductor, copper is diffused in two

superconductor layers

440 and 470, forms the HTS layer that is rich in copper.Be rich in U.S. Patent Publication 2006-0094603 number that the out of Memory that uses the copper intermediate layer in the HTS lead of copper is seen the common pending trial that the applicant has in processing, this patent application is open on May 4th, 2006, title is " the thick superconductive body film (Thick Superconductor Films With ImprovedPerformance) that performance improves ", and its full content is incorporated into this by reference.

In some embodiments, Cu concentration being increased at most, excessive 20% Cu can improve Ic (ab).Fig. 6 is that the critical current (Ic) of the oxide superconductor of various compositions is with respect to magnetic field orientating (Θ, 75K) figure that is done.Curve 610 and 610 ' has been measured respectively for the Y-123 layer that contains excessive 7.5% copper, under 1T and 3T, and the electric current in certain Θ scope.These curves show strong maximum at 90 ° (H//ab), show minimum value at 0 ° (H//c), therefore prove that this superconductor composition has optimize performance at H//ab.The Y-123 that is rich in copper also shows strong electric current anisotropy between H//ab and H//c, wherein Ic (ab) is about 2.4 with the ratio of Ic (c) when 1T, is about 6 when 3T.In one or more execution modes, under 65K and 3T, the Ic (c) of high Ic (c) superconductor greater than the 20-55 ampere/centimetre-width, in the magnetic field of at least 1 tesla, the ratio of Ic (ab)/Ic (c) is greater than 2.5, perhaps greater than 3.5, perhaps greater than 5.5.In magnetic field intensity is up to the situation of 6 teslas, also obtained this ratio, expected that this ratio may also be suitable for higher magnetic field.

The exemplary superconductor that has a superperformance at H//c comprises and contains rare earth (RE)-alkaline earth-Cu oxide that a kind of excessive rare earth element or two or more meet the excessive rare earth element of stoichiometric proportion or stoichiometric proportion.Be not subject to any specific operator scheme, excessive rare earth it is believed that and can improve Ic (c) by the defective that forms the nanoscale that is used as flux pinning center (flux pinning center).Can realize atom defect by in the Y-123 superconductor, introducing different rare earth elements.In one or more execution modes, for example, it is admissible adding at most about 25% rare earth element or replace about 150% rare earth element at most in the composition that contains yttrium.In one or more execution modes, rare earth element is holmium and/or erbium.Two or more rare earths are introduced in the oxide superconductor layer, not only improved Ic (c), and reduced the difference (anisotropy) between Ic (ab) and the Ic (c).Referring to Fig. 6, curve 620 and 620 ' has been measured respectively for the Y-123 layer that contains the superconductor composition of having added 25% erbium (for example Y:Er=4:1), under 1T and 3T, and the electric current in certain Θ scope.Curve 630 and 630 ' has been measured respectively for the Y-123 layer that contains 50% erbium (for example Y:Er=2:1), under 1T and 3T, and the electric current in the certain magnetic field orientation range.Critical current at 90 ° (H//ab) obviously reduces, and increase at the critical current of 0 ° (H//c), thereby prove and can be selected the composition of superconducting layer, to improve critical current (absolute term), reduce the electric current anisotropy between Ic (ab) and the Ic (c) simultaneously at H//c.For the Y-123 that has added 25% erbium, Ic (ab) is about 1.8 with the ratio of Ic (c) at 1T, be about 2.6 at 3T, and for the Y-123 that has added 50% erbium, the ratio of H//ab and H//c is about 1.2 at 1T, is about 1.6 at 3T.This is obviously less than the electric current anisotropy of high Ic (ab) lead.As a comparison, Ic (the ab)/Ic (c) that is rich in the Y-123 of copper is 2.4 (1T) and 6.0 (3T).In one or more execution modes, in the magnetic field of at least 1 tesla, the ratio of the Ic (ab) of high Ic (c) superconductor layer/Ic (c) is less than 2.6, or less than 2.0, or less than 1.5.Magnetic field intensity is up in the situation of 6 teslas and has also obtained this ratio, expects that this ratio may also be suitable for higher magnetic field.

In one or more execution modes, high Ic (c) superconductor material is included in two second phase nano particles in the oxide superconductor particle.This nano particle is formed by metallic compound, can contain in rare earth element, alkaline-earth metal and the transition metal one or more.Two second phases (second phase) nano particle can be zirconia, aluminium oxide, Y ₂Cu ₂O ₅, Y ₂BaCuO ₄, magnesium oxide, BaZrO ₃, silver and CeO ₂In one or more.Be applicable to that the nano-scale defective that forms in the oxide superconductor particle sees No. the 10/758710th, the U.S. Patent application of the common unexamined that the applicant has with the pinning line of flux in magnetic field and other composition of improving current-carrying character, this patent application was submitted on January 16th, 2005, title is " oxidation film (Oxide Films with NanodotFlux Pinning Centers) with nano dot flux pinning center ", and its full content is incorporated into this by reference.

In one or more execution modes, can be selected the thickness of high Ic (ab) and high Ic (c) layer, to be provided at previously selected performance in the magnetic field orientating.Therefore, for example, be adapted at most being the band or the lead of working in the magnetic field of miter angle orientation, can use high Ic (c) superconductor layer and high Ic (ab) superconductor layer simultaneously with belt surface in order to make, according to data shown in Figure 6, wherein Ic (c) layer is more thinner than Ic (ab) layer.Can regulate two-layer relative thickness, make (for example) Ic (c)〉80 amperes/centimetre-width, Ic (ab)/Ic (c) is greater than 2, or Ic (c)〉the 120-150 ampere/centimetre-width, Ic (ab)/Ic (c) is greater than 2, or Ic (c)〉the 150-180 ampere/centimetre-width, Ic (ab)/Ic (c) is 2-3.

In one or more execution modes, by metal organic deposit method (MOD) deposition superconductor layer.The precursor solution deposition that will contain the formation element of first oxide superconductor layer made this precursor layer be decomposed into intermetallic metal oxidation (metaloxy) layer before applying second superconductor layer.Deposition contains second precursor solution of the formation metallic element of second oxide superconductor layer then, makes this precursor layer be decomposed into the intermetallic metal oxide layer.Then two intermediate layers are converted into the HTS layer fully.For example, precursor solution can comprise slaine, comprises fluoride, and precursor can be decomposed to form intermetallic metal oxyfluoride layer.This further heat treatment of metal oxyfluoride layer forms oxide superconductor.In other embodiments, deposit first precursor layer, be converted into oxide superconductor layer fully.Deposit second precursor layer then, also be converted into oxide superconductor layer fully.The thickness of each superconductor layer is about 0.6 micron to 1.5 microns, and is perhaps thicker.The gross thickness of superconducting layer is about 0.6 micron to 2.0 microns, generally is no more than about 3 microns.

In other embodiments, each superconducting layer is deposited on the independent substrate, i.e. the HTS assembly.Substrate with coating links together then, forms the HTS lead that contains two substrates/superconductor layer assembly.Term " HTS assembly " used in the literary composition is meant the sandwich construction that comprises substrate, one or more resilient coating, superconductor layer and one or more protective layers.

As shown in Figure 7, the HTS assembly can connect at they substrate places separately, outside shielded like this superconductor layer faces.HTS lead 700 is made up of two HTS assemblies 710 and 720.In these assemblies each is all used technology manufacturing known in the art, and these technology are described in detail in this article.Assembly 710 comprises metal substrate 760.Substrate 760 comprises the surface that at least one is Biaxially-textured, to provide the crystal template to resilient coating 750 and HTS layer 740.Resilient coating 750 covered substrates 760 can comprise one or more layers.HTS layer 740 covers resilient coating 750, can be any HTS material.In one or more execution modes, the HTS layer comprises rare earth-alkaline earth-Cu oxide, and for example Y-123 carried out optimization to the performance at H//ab or H//c.Protective layer 730 is positioned at HTS layer 740 top, and the protection to the HTS layer is provided, and avoids being subjected to chemistry and mechanical damage.720 ' of insertion can have identical or similar structure, comprises substrate 760 ', resilient coating 750 ', HTS layer 740 ' and protective layer 730 '.In execution mode shown in Figure 7, superconductor layer 740 is shown as high Ic (c) superconductor material, and superconductor layer 740 ' is shown as high Ic (ab) material, and still, obvious two superconductor layers can be high Ic (ab) material or high Ic (c) material.

Adhesive 780 is bonded together assembly 710 and assembly 720 at their substrate places separately, produce HTS assembly 700.Outside protective layer 730 and 730 ' faced in assembly 700, substrate 760 and 760 ' was positioned at assembly 700 inside.This structure for example provide with external power source effectively electrically contact with the superconductive wire length direction on effective the connection.The outer surface of assembly is the protective layer 730 and 730 ' of conduction.These layers are the conduction approach that HTS layer 740 and 740 ' separately facilitates.In order in the HTS layer, to introduce electric current, can form the connection between power supply and the assembly in any position of module outer surface.

Bonding for the ease of between

HTS assembly

710 and 720 can randomly be gone up coating wetting layer, for example Ag or Cu (not shown) at

substrate

760 and 760 '.Therefore these wetting layers are convenient to each assembly and adhesive phase 780 is bonding, are convenient to each assembly and other assembly is bonding.In one or more execution modes, adhesive phase 780 is made by scolder, resin, epoxides or other non-conductive material.Exemplary scolder is Pb-Sn-A.In the course of processing, the back side of metal substrate (promptly not facing the surface of the resilient coating) intrinsic of can growing (native) oxide skin(coating), this layer is an electrical insulator.The common nonwetting scolder of this oxide skin(coating), promptly not bonding with scolder.Add the Ag wetting layer to substrate 760 and 760 ' and can make the back side become wettable, promptly can be adhered to scolder adhesive phase 780.Therefore, described bonding can be by finishing with the bonding welding wetting layer in the native oxide of substrate surface.

Needing to have between the substrate in the application of excellent electric contact, can at first remove the electric insulation native oxide layer on

substrate

760 and 760 '.Thisly remove operation and can finish by for example etching, electrobrightening, sputter or bead.Then wetting metal layer (for example Ag or Cu) is coated on the substrate 760 and 760 ' back side separately, to prevent the regrowth of native oxide at substrate surface.But,, do not need very strictly to remove native oxide layer for the HTS lead according to one or more execution modes of the present invention is provided.No. the 11/193262nd, the U.S. Patent application that is described in more detail the common unexamined of seeing that the applicant has that is used for the HTS assembly of one or more execution modes of the present invention, this application was submitted on July 29th, 2005, title is " framework of high temperature superconductor wire (ArchitectureFor High Temperature Superconductor Wire ", and its content is by with reference to being incorporated into this.

In yet another embodiment of the present invention, as shown in Figure 8, the HTS assembly can connect at they protective layer places separately, in shielded like this superconductor layer faces.HTS lead 800 is made up of two HTS assemblies 810 and 820.In these assemblies each is all used technology manufacturing known in the art, and these technology have been carried out more detailed description hereinafter.Assembly 810 comprises metal substrate 830.Substrate 830 comprises the surface that at least one is Biaxially-textured, to provide the crystal template to resilient coating 840 and HTS layer 850.Resilient coating 840 covered substrates 830 can comprise one or more layers.HTS layer 850 covers resilient coating 840, can be any HTS material.In one or more execution modes, the HTS layer comprises rare earth-alkaline earth-Cu oxide, and for example Y-123 carried out optimization to the performance at H//ab or H//c.Protective layer 860 is positioned at HTS layer 850 top, and the protection to the HTS layer is provided, and avoids being subjected to chemistry and mechanical damage.Plug-in package 820 can have identical or similar structure, comprises substrate 830 ', resilient coating 840 ', HTS layer 850 ' and protective layer 860 '.In execution mode shown in Figure 8, superconductor layer 840 is shown as high Ic (c) superconductor material, and superconductor layer 840 ' is shown as high Ic (ab) material, and still, obvious two superconductor layers can be high Ic (ab) material or high Ic (c) material.A kind of each HTS assembly that makes in making is in many ways located to be connected at protective layer 860 and 860 '.For example, exemplary interconnection technique comprises welding and diffusion bonding.Exemplary weld layer 880 is presented among Fig. 8, and two HTS assemblies 810 are connected with 820.Other information about the HTS assembly sees in No. the 6th, 828,507, the United States Patent (USP) that the applicant has, and its content is by with reference to being incorporated into this.

In one or more execution modes, as shown in Figure 9, can be by further improve the electrical stability of two superconductor layer HTS leads around superconductive wire (for example lead shown in Fig. 7 and 8) with conductive structure 900.This conductive structure allows electric current to be transferred to another superconductor layer from a superconductor layer.This conductive structure provides the redundant current approach, thereby has improved the stability of lead to quencher, has reduced sensitiveness and the changes of properties of lead to local defect.This conductive structure can comprise the upper and lower conduction band 910 and 910 ' that electrically contacts with HTS assembly 710 and 720.The conductive filler 920 of basic atresia and the 920 ' side along the superconductive wire assembly extend between the first and second conduction bands, and HTS assembly and environment are isolated, and two electrical connectivity between the superconductor layer are provided, and provide and outside being electrically connected.

In lead 900, filler 920 and 920 ' provides the electric connection between HTS assembly 710 and 720.In fact, filler 920 and 920 ' is as conducting wire or conducting bridge.Although filler 920 and 920 ' conducts electricity, when electric current passed through lead 900, electric current can advance along the approach of resistance minimum usually, and this approach passes through one or two in the HTS assembly 710 and 720.With single component or two independently assembly compare, the electric approach more than needed that exists power supply stream to pass through can improve the electrical stability of lead, increases the current-carrying capacity of lead 900.At last, filler 920 and 920 ' provides a kind of electric current is introduced one or two method in HTS assembly 710 and 720.By power supply is simply contacted with 920 ' with filler 920, electric current enters the HTS assembly by filler.Because filler 920 and 920 ' stablize band 910 and is contacted with 910 ' with conduction, so power supply and band 910 are contacted with in 910 ' one or two also electric current can be introduced in

HTS assembly

710 and 720 one or two.

Material 920 and 920 ' is selected, and making this material is atresia, has enough intensity, and can be coated to enough thickness, the basic encirclement and sealed guide 900.Also to improve the mechanical strength of lead, help to prevent lead 900 at the thick coating of the filler 920 of lead 900 sides and 920 ' because crooked or other possible damage factor and delamination.Material 920 and 920 ' is by providing extra thermal capacity to increase the thermal stability of lead.In one or more execution modes, lead has enough filler width, with the mechanical strength that meets lead 900 and the requirement of durability aspect, but does not need too wide.Usually the width of each filler is the 0.025-0.2 millimeter, but can wideer or narrower (for example 0.005-1 millimeter).

Stablize mechanical stability, electrical stability and thermal stability that band 910 and 910 ' has also strengthened lead 900.Band 910 and 910 ' can be identical or different, depends on the needed character of gained lead.The width of band can change in the very wide scope of about 0.01-2 millimeter, specifically depends on required application, and 0.05-0.075 millimeter for example is up to up to 1 millimeter or greater than 1 millimeter.The normally flexible electric conducting material of band 910 and 910 ', for example metal, for example aluminium, copper, silver, nickel, iron, stainless steel, aluminium alloy, copper alloy, silver alloy, nickel alloy, nickel tungsten or ferroalloy.For major applications, preferably high-conductive metal, for example copper.Use for fault current limiter, preferably have the high-resistivity alloy of high mechanical properties, for example stainless steel.

In some embodiments, stablize the width of the width of band 910 and 910 ' greater than HTS assembly 710 and 720.This additional width or ledge can make the layer of filler 920 and 920 ' or sideband (fillets) side along lead under capillarity form.Usually, band 910 and 910 ' width are than the big 0.01-2 millimeter of width of HIS assembly 710 and 720.For example, to be about 4.3 millimeters stable band can be that 4.0 or 4.1 millimeters superconduction plug-in package uses with width to width.

Can be according to manufacturing HTS lead shown in Figure 10, for example lead 1000.The HTS wire assembly is manufactured to broad (for example about 4-10 centimetre wide) multilayer band, rip cutting longitudinally is some narrower bands (for example obtaining about 10 about 0.4 centimetre wide bands from 4 centimetres of wide bands) then, and these bands form HTS assembly 1010 and 1020.See the step 1190 of Figure 11.Conduction is stablized band 1060 and 1060 ' and can be stablized band like this and get off from the side-by-side mounting of HTS band than narrow HTS bar bandwidth.After rip cutting, bathe in 1000 at filler, with narrow HTS insert band 1010 and 1020 and stable band 1060 and 1060 ' be connected to form lead.For example, multi-layer H TS can be inserted band 1010 and 1020 joins the filler bath from spool 1010 and 1010 '.Can add from the spool 1020,1020 ' that is placed on HTS1010,1020 charging spool 1010,1010 ' above and below and stablize band 1060,1060 ', material forms the structure that piles up in the vertical like this.Filler surrounds HTS assembly 1010 and 1020 simultaneously, and with they be laminated to the conduction stablize on band 1060 and 1060 '.Mould 1030 merges and solidifies insertion band 1010,1020 and stable band 1060,1060 ', forms a kind of superconductivity wire 1000.By after manufacturing and rip cutting HTS insertion band, will stablize slice layer and be pressed onto on the lead, can easily make the width of stablizing band greater than the width that inserts band.The suspension feature that should stablize band has promoted the upper and lower to stablize the capillary wicking effect (wicking) of the scolder between band 1060 and 1060 ', thereby the thick sideband or the filler of high mechanical properties are provided at the side of lead.

The U.S. Patent application that is described in more detail the common unexamined of seeing that the applicant has the 11/193rd of the conductive structure that one or more execution modes of foundation HTS lead of the present invention use, No. 262, this application was submitted on July 29th, 2005, title is " framework of high temperature superconductor wire (ArchitectureFor HighTemperature Superconductor Wire ", and its content is by with reference to being incorporated into this.

Lead with different performance feature can terminal be connected with end, obtains the HTS lead that its performance changes along its length.This lead uses the HTS lead manufacturing with conduction external structure, and this external structure provides and the electrically contacting of oxide superconductor layer, for example, and as shown in Figure 9.

HTS lead described in the literary composition can be used for solenoid or electromagnet winding.Therefore, the HTS lead twine to form coil, and the HTS lead that makes contact in the coil have in the zone in magnetic field of strong H//ab part is made by the HTS lead with high Ic (ab).Similarly, the HTS lead that contacts in the coil in the zone with strong H//c magnetic field is partly made by the HTS lead of required Ic (ab)/Ic (c) ratio that has high Ic (c) and choose wantonly.The zone in the magnetic field of contact intermediate orientation is made by such HTS lead in the coil, and this lead has the combination of required high Ic (ab) and high Ic (c) superconducting layer, thereby obtains required Ic (c) and optional required Ic (ab)/Ic (c) ratio.In addition, the thickness of two layers is selected, to be parallel to or perpendicular to the required combination of the current density of belt surface.

Figure 11 has illustrated the flow chart that is used to make according to the illustrative methods of the HTS lead of the various execution modes of the present invention.In first site 1110, wire substrate is handled to obtain biaxial texture.Preferably, described substrate surface has more regular crystalline orientation.For example, described surface can be Biaxially-textured surface (for example surface, (113) [211]) or the surface of cubic textureization (for example surface, (100) [011] or surface, (100) [001]).Preferably, the FWHM at the peak of Biao Mian X-ray diffraction utmost point figure is approximately less than 20 ° (for example approximately less than 15 °, approximately less than 10 °, or being about 5-10 °).

Described surface can be by for example calendering (rolling) and annealing preparation.Vacuum method preparation also can be used in the surface, for example prepares by ion beam assisted depositing, inclination substrate deposition and other vacuum technique known in the art, forms Biaxially-textured surface on the polycrystalline of for example random orientation or amorphous surfaces.(when for example using ion beam assisted depositing) in some embodiments, the surface of described substrate not necessarily need texturing (for example described surface can be the polycrystalline of random orientation, and perhaps described surface can be unbodied).

Described substrate can support resilient coating lamination and/or superconductor material layer by any, and can provide any material of the required engineering properties of finished product lead to form.The example that can be used as the baseplate material of substrate comprises for example metal and/or alloy, for example nickel, silver, copper, zinc, aluminium, iron, chromium, vanadium, palladium, molybdenum and/or their alloy.In some embodiments, described substrate can be formed by high temperature alloy.In some embodiments, described substrate can be the form (for example lead or wafer) with object of large surface area.In these execution modes, described substrate is preferably formed by flexible reasonable material.

In some such embodiments, described substrate is two kinds the bianry alloy that comprises in the following metal: copper, nickel, chromium, vanadium, aluminium, silver, iron, palladium, molybdenum, tungsten, Jin Hexin.For example, bianry alloy can be formed (chromium that for example comprises nickel and maximum 20 atom %, the chromium of nickel and about 5-18 atom %, the perhaps chromium of nickel and about 10-15 atom %) by nickel and chromium.Again for example, bianry alloy can be formed (for example the nickel of copper and about 5-45 atom %, the nickel of copper and about 10-40 atom %, the perhaps nickel of copper and about 25-35 atom %) by nickel and copper.Again for example, bianry alloy can comprise nickel and tungsten (tungsten of for example about 1-20 atom %, the tungsten of about 2-10 atom %, the tungsten of about 3-7 atom %, the tungsten of about 5 atom %).Bianry alloy can comprise more a spot of impurity (for example approximately less than the impurity of 0.1 atom %, approximately less than the impurity of 0.01 atom %, or approximately less than the impurity of 0.005 atom %) in addition.Ni-5 weight %W is the material that is preferred for substrate.

In some such execution mode, described substrate comprises two or more metal (for example ternary alloy three-partalloy or quaternary alloy).In some such embodiments, described alloy can comprise one or more oxides and form agent (for example Mg, Al, Mo, V, Ta, Ti, Cr, Ga, Ge, Zr, Hf, Y, Si, Pr, Eu, Gd, Tb, Dy, Ho, Lu, Th, Er, Tm, Be, Ce, Nd, Sm, Yb and/or La, wherein Al is that preferred oxide forms agent), and in the following metal two kinds: copper, nickel, chromium, tungsten, vanadium, aluminium, silver, iron, palladium, molybdenum, Jin Hexin.In some such execution mode, described alloy can comprise two kinds in the following metal: copper, nickel, chromium, tungsten, vanadium, aluminium, silver, iron, palladium, molybdenum, Jin Hexin can not have above-mentioned arbitrarily oxide to form agent substantially.

Alloy comprises in the execution mode of oxide formation agent therein, described alloy can comprise and forms agent at least about the oxide of 0.5 atom % (for example the oxide at least about 1 atom % forms agent, perhaps the oxide at least about 2 atom % forms agent) and the oxide formation agent (for example the oxide of about 10 atom % forms agent at most, and perhaps the oxide of about 4 atom % forms agent at most) of about 25 atom % at most.For example, described alloy can comprise oxide and form agent (for example at least about 0.5 atom % aluminium), the nickel of about 25-55 atom % (nickel of the nickel of for example about 35-55 atom % or about 40-55 atom %), and surplus is a copper.Again for example, described alloy can comprise oxide and form agent (for example at least about 0.5 atom % calcium), the chromium of about 5-20 atom % (chromium of for example about 10-18 atom %, the chromium of perhaps about 10-15 atom %), and surplus is a nickel.These alloys can comprise more a spot of other metal (for example approximately less than the additional metals of 0.1 atom %, approximately less than the additional metals of 0.01 atom %, perhaps approximately less than the additional metals of 0.005 atom %).

The substrate that is formed by alloy can form by the following method, and for example the component with powder type mixes, fusing, and cooling perhaps for example disperses solid-state powdery components mutually then.Can form alloy by deformation textureization (for example anneal and roll, forge and press, extrude and/or draw) then, to form textured surface (for example Biaxially-textured or cubic textureization).Perhaps, described alloy compositions can be stacked into rubber roll backing (jelly roll) structure, carry out deformation textureization then.In some embodiments, can be to material (for example Nb, Mo, Ta, V, Cr, Zr, Pd, Sb, NbTi, and intermetallic compound, for example NiAl or Ni with relatively low thermel expansion coefficient ₃Al, perhaps their mixture) form, be made into bar-shapedly, embed in the alloy, carry out deformation textureization then.

In some embodiments, can use the intermediate layer that is positioned on the substrate surface, make the surface go up the stable oxide migration of formation, until on Biaxially-textured alloy surface, forming first epitaxial loayer (for example resilient coating).The intermediate layer comprises as the required PO of initial growth that is exposed to the epitaxial buffer tunic ₂In the time of the condition set up with temperature, can not form the epitaxial metal layer or the alloy-layer of oxide on surface.In addition, described resilient coating prevents in the initial growth process of epitaxial loayer that as the barrier layer migration of element of substrate is to the surperficial of intermediate layer and form oxide.When not having such intermediate layer, expection one or more elements in the substrate can form thermodynamically stable oxide at substrate surface, and their can significantly hinder the deposition of epitaxial loayer, and for example texture causes because this oxide skin(coating) lacks.

Exemplary intermediate metal layer comprises nickel, gold, silver, palladium and their alloy.Other metal or alloy can comprise the alloy of nickel and/or copper.The epitaxial film or the layer that are deposited on the intermediate layer can comprise metal oxide, chalcogenide, halide and nitride.In some embodiments, oxidation can not take place in described intermediate metal layer under the epitaxial film sedimentary condition.

Cause before epitaxial loayer forms in the nucleation of initial buffer layer structure and growth, should be noted that the intermediate layer that does not make deposition is incorporated into fully or diffuses in the substrate.This means afterwards at the metal (or alloy) of selecting to have suitable attribute, the metal layer thickness of deposition must be suitable for the epitaxial deposition condition, particularly be suitable for temperature, described attribute is included in the diffusion constant in the substrate alloy, the anti-oxidant thermodynamic stability under the epitaxial buffer growth conditions of reality and with the lattice match of epitaxial loayer.

The deposition of intermediate metal layer can be by evaporation or sputter and so on vacuum method or the electrochemical process of electroplating (using or do not use electrode) and so on carry out.The intermediate metal layer of these depositions can be that deposition is afterwards epitaxially grown, also can not be (depending on the substrate temperature in the deposition process), but epitaxial orientation can obtain in post-depositional heat-treatment process subsequently.

In some embodiments, can on the surface in substrate or intermediate layer, form sulphur.Can comprise sulphur source (H for example by for example making the intermediate layer ₂S, tantalum paper tinsel or silver foil) and the hydrogen source (mixture of hydrogen or hydrogen and inert gas for example, hydrogen/ar mixture of 5% for example) exposes (for example about 10 seconds to 1 hour a period of time in the gaseous environment, about 1 minute to about 30 minutes, about 5-15 minute), on the surface in intermediate layer, form sulphur.This can carry out at elevated temperatures (for example about 450-1100 ℃, about 600-900 ℃, 850 ℃).The pressure of hydrogen (perhaps hydrogen/noble gas mixtures) can be lower (for example approximately less than 1 holder, approximately less than 1 * 10 ^-3Holder is approximately less than 1 * 10 ^-6Hold in the palm) or higher (for example approximately greater than 1 holder, approximately greater than 100 holders, approximately greater than 760 holders).

Without wanting to be limited by theory, but it is believed that the surface that makes textured substrate under these conditions is exposed to the sulphur source, can on textured substrate surface, form the superstructure (for example c (2 x 2) superstructure) of sulphur.Think that also this superstructure (superstructure) can make the surface stabilization (for example chemistry and/or physically stableization) in intermediate layer effectively.

Although described a kind of method that forms the sulphur superstructure, also can use the method for other this superstructure of formation.For example, can on the surface in described intermediate layer, apply suitable organic solution, thereby form sulphur superstructure (for example Sc (2 * 2)) by under suitable gaseous environment, being heated to suitable temperature.In addition, although described the formation of the sulphur superstructure on interlayer surfaces, it is believed that other superstructure also can make this surface stabilization (for example chemistry and/or physically stableization) effectively.For example, think that being arranged on lip-deep oxygen superstructure, nitrogen superstructure, carbon superstructure, potassium superstructure, cerium superstructure, lithium superstructure or selenium superstructure can improve the stability on this surface effectively.

At second treatment site, 1120 places, on textured substrate, form one or more resilient coatings by epitaxial growth.Perhaps, use ion beam assisted depositing (IBAD) forming resilient coating on the textured polycrystalline metal surface at random.In this technology, when ion beam (for example ar-ion beam) directive has deposited the level and smooth amorphous surfaces of substrate of cushioning layer material of evaporation on it, use for example electron beam evaporation, sputtering sedimentation or pulsed laser deposition evaporation and buffering layer material.

For example, can pass through ion beam assisted depositing, cushioning layer material (the material that for example has rock salt structure that has rock salt shape structure by evaporation, the oxide or the nitride that for example comprise MgO), go up in the level and smooth amorphous surfaces of substrate (for example the root mean square rugosity is approximately less than the surface of 100 dusts) and to form resilient coating, make cushioning layer material have in face and the outer surface (for example being approximately equal to or less than 13 °) of aliging substantially of face.

Used condition for example can comprise in the deposition cushioning layer material process: substrate temperature is about 0-750 ℃ and (for example is about 0-400 ℃, be about room temperature to 750 ℃, be about room temperature to 400 ℃), deposition rate is about 1.0-4.4 dust/second, ion energy is about 200-1200eV, and/or ion-flow rate be about the 110-120 milliampere/centimetre ²

In some embodiments, when using IBAD, described substrate forms (for example metal alloy of nickel alloy and so on) by the material with polycrystalline, non-amorphous basic structure, and it has by different materials (Si for example ₃N ₄) the level and smooth amorphous surfaces that forms.

In some embodiments, can be by epitaxial growth a plurality of resilient coatings of deposition on initial IBAD surface.Each resilient coating can planar with outside the plane all be aimed at (for example being approximately equal to or less than 13 °) substantially.

Can use solution phase technology to prepare padded coaming, described solution phase technology comprises organic metal deposition, and for example referring to people's such as S.S.Shoup J.Am.Cer.Soc, the 81st rolls up 3019; People's such as D.Beach Mat.Res.Soc.Symp.Proc, the 495th volume, 263 (1988); People's such as M.Paranthaman Superconductor Sci.Tech., the 12nd volume, 319 (1999); People's such as D.J.Lee Japanese J.Appl.Phys., the 38th volume, L178 (1999), and people's such as M.W.Rupich I.E.E.E.Trans, onAppl.Supercon. the 9th volume, 1527.In some embodiments, can use a kind of or its combination in any oxide skin(coating) of epitaxial deposition on textured substrate of solution coating process; But they can be particularly suitable for deposition initial (seed crystal) layer on textured metal substrate.The effect of inculating crystal layer is: 1) when being next oxide skin(coating) of atmosphere deposit of oxidizability with respect to substrate when the zirconia of oxide target magnetron sputtering deposition stabilized with yttrium oxide (for example by), protective substrate is avoided oxidation; And 2) provide the epitaxial template of later oxide layer growth.In order to satisfy these needs, described inculating crystal layer should epitaxial growth on the whole surface of metal substrate, and does not contain the impurity that any meeting impacts the deposition of subsequently epitaxial oxide layer.

Can form oxide buffer layer to promote the moistening of following substrate layer.In addition, in specific execution mode, can use metal alkoxide precursors (for example " sol-gel " precursor) to form metal oxide layer.

In case prepared the textured substrate that comprises resilient coating, as mentioned above at deposition site 1130 precursors to deposit solution.Randomly, can carry out patterned process to precursor.May need miscellaneous equipment to finish patterning operations, for example, when using laser ablation or ion bombardment to come that superconducting layer carried out patterned process.If use dropwise patterned deposition, the deposition and the patterned process of oxide precursor solution just can be finished in the single site of then having assembled the ink-jet printer depositing device.

Usually, use the solution chemistry method to prepare barium fluoride and/or other superconductor precursor; And with a kind of solution (solution of metalline for example, described slaine is the fluoride salt of yttrium acetate, trifluoroacetic acid yttrium (Y-TFA), copper acetate, barium acetate and/or barium for example) from the teeth outwards (for example be provided with, be deposited on the substrate surface, described substrate for example has alloy-layer and it is provided with the substrate of one or more resilient coatings).Can use standard technique (for example spin coating, dip-coating, slit coating (slot coating)) that solution is set from the teeth outwards.Drying solution, (for example remove at least a portion organic compound of existing in the solution, dry at room temperature or under the situation of mild heat), the gained material reacts (for example decompose) in heating furnace, under the gaseous environment that contains oxygen and water, form barium fluoride and/or other suitable material (for example CuO and/or Y ₂O ₃).In some embodiments, above-mentioned reactor can be used for any step or the Overall Steps in these steps.

Use source metal to prepare metal salt solution with the required proper ratio of gained superconductor layer.Therefore, for example, the precursor solution that is used for preparing high Ic (ab) superconductor layer that contains excess copper comprises a certain amount of mantoquita of interpolation, and the amount of this mantoquita is that stoichiometric proportion is excessive with used the comparing of Y-123.Similarly, precursor solution can contain additive component, comprises soluble and insoluble metallic compound, is used for the final superconductor composition of modification.This class additive can comprise for example compound of soluble following metal: for example yttrium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium, alkaline-earth metal, for example calcium, barium and strontium, transition metal, for example scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel and zirconium, cerium, silver, aluminium and magnesium, these metallic compounds can be dissolved in the solvent that precursor solution comprises.Additive component can also comprise stoichiometry excessive be included in soluble compounds in the precursor solution.For example, can comprise soluble yttrium salt or soluble mantoquita in the precursor solution, the consumption of these salt surpasses the required amount of formation Y123.Insoluble additive component can also be joined in the precursor solution.

The example of spendable metal salt solution is as follows.

In some embodiments, metal salt solution contains more a spot of free acid.As the aqueous solution, such metal salt solution is equivalent to the metal salt solution of relative neutral pH (for example, neither strong acid, neither highly basic).This metal salt solution can be used for preparing the multilayer superconductor that uses multiple material, and these materials can be used as the lower floor that forms superconductor layer thereon.

Total free acid concentration in the metal salt solution can be less than about 1x10 ^-3Molar concentration is (for example, less than about 1x10 ^-5Molar concentration or less than about 1x10 ^-7Molar concentration (molar)).The example that can be included in the free acid in the metal salt solution comprises the acid of the acid of trifluoroacetic acid, acetate, nitric acid, sulfuric acid, iodide, bromide and the acid of sulfate.

When metal salt solution contained water, the pH of precursor composition was at least about 3 (for example, being at least about 5-7).

In some embodiments, metal salt solution has lower water content (for example, less than the water of about 50 volume %, less than the water of about 35 volume %, less than the water of about 25 volume %).

Contain in the execution mode of trifluoroacetic acid radical ion and alkaline earth metal cation (for example barium) at metal salt solution, can be selected the total amount of trifluoroacetic acid radical ion, make the fluorine that contains in the metal salt solution (for example, trifluoroacetic acid root form) with metal salt solution in the mol ratio of the alkaline-earth metal (for example barium ions) that contains (for example be at least about 2:1, be about 2:1 to 18.5:1, or be about 2:1 to 10:1).

Usually, can prepare metal salt solution by the soluble compounds of first metal (for example copper), second metal (for example alkaline-earth metal) and rare earth metal is mixed with the water of choosing wantonly with one or more required solvents." soluble compounds " of used first, second and rare earth metal is meant the compound that can be dissolved in these metals in the solvent that metal salt solution contains in the literary composition.This compounds comprises, for example, and the salt of these metals (for example nitrate, acetate, alkoxide, iodide, sulfate and trifluoroacetate), oxide and hydroxide.

In some embodiments, can form metal salt solution by the organic solution of containing metal trifluoroacetate, described metal trifluoroacetate acetate passes through Ba (O ₂CCH ₃) ₂, Y (O ₂CCH ₃) ₃And Cu (O ₂CCH ₃) ₂Powder is used method known to those skilled in the art to react then and is prepared.For example, the ratio that described metal trifluoroacetate acetate powder can 2:1:3 is mixed in methyl alcohol, and generating in copper content is that benchmark concentration is the solution of 0.94M substantially.

In some embodiments, metal salt solution can contain Louis (Lewis) alkali.Described rare earth metal can be yttrium, lanthanum, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, cerium, praseodymium, neodymium, promethium, samarium or lutetium.Usually, rare earth metal salt can be can be dissolved in the solvent that contains in the metal salt solution and form rare earth oxide (for example, Y when treated formation intermediate (for example, metal oxyhalide intermediate) ₂O ₃) any rare earth metal salt.For example, the general formula of this class salt is M (O ₂C-(CH ₂) _n-CXX ' X ") (O ₂C-(CH ₂) _m-CX " ' X " " X " " ') (O ₂C-(CH ₂) _p-CX " " " X " " " ' X " " " ") or M (OR) ₃M is a rare earth metal, and n, m and p are at least 1, but less than making salt be insoluble to the numerical value (for example being 1-10) of solvent.X, X ', X ", X " ', X " ", X " " ', X " " ", X " " " ' and X " " " " independently be H, F, Cl, Br or I separately.R is a carbon-containing group, can be (the CH for example of halo ₂CF ₃), or halo not.The example of this class salt comprises not halogenated carboxylic acid salt, halogenated acetic acids salt (for example trifluoroacetate, trichloroacetate, tribromoacetic acid salt, triiodoacetic acid salt), halo alkoxide and halo alkoxide not.This class not example of halogenated carboxylic acid salt comprises not halogenated acetic acids salt (M (O for example ₂C-CH ₃) ₃).Alkaline-earth metal can be barium, strontium or calcium.Usually, alkali salt can be can be dissolved in the solvent that contains in the metal salt solution and form alkaline-earth halide (BaF for example when treated formation intermediate (for example, metal oxyhalide intermediate) ₂, BaCl ₂, BaBr ₂, BaI ₂), form any alkali salt of alkaline earth oxide (for example BaO) then.For example, the general formula of this class salt is M ' (O ₂C-(CH ₂) _n-CXX ' XX ") (O ₂C-(CH ₂) _mCX " ' X " " X " " ') or M ' is (OR) ₂M ' is an alkaline-earth metal.N and m are at least 1, but less than making salt be insoluble to the numerical value (for example being 1-10) of solvent.X, X ', X ", X " ', X " " and X " " ' separately independently be H, F, Cl, B or I.R can be halo or the carbon-containing group of halo not.The example of this class salt comprises halogenated acetic acids salt (for example trifluoroacetate, trichloroacetate, tribromoacetic acid salt, triiodoacetic acid salt).Usually, transition metal is a copper.Transition metal should be able to be dissolved in the solvent that contains in the metal salt solution.Preferably, be in the process of intermediate (for example metal oxyhalide) in precursor conversion, in the cross-linking reaction (for example, copper molecule) that minimum degree independently takes place between the transition metal molecule (for example copper molecule).For example, the general formula of this class transition metal salt is M " (CXX ' X "-CO (CH) _aCO-CX " ' X " " X " " ') (CX " " " X " " " ' X " " " " CO (CH) _bCOCX " " " " ' X " " " " " X " " " " " '), M " (O ₂C (CH ₂) _n-CXX ' X ") (O ₂C (CH ₂) _m-CX " ' X " " X " " ' or M " (OR) ₂M " is a transition metal.A and b are at least 1, but less than making salt be insoluble to the numerical value (for example being 1-5) of solvent.Usually n and m are at least 1, but less than making salt be insoluble to the numerical value (for example being 1-10) of solvent.X, X ', X ", X " ', X " ", X " " ', X " " ", X " " " ', X " " " ", X " " " " ', X " " " " ", X " " " " " ' separately independently be H, F, Cl, Br or I.R is a carbon-containing group, can be halo (CH for example ₂CF ₃) or halo not.These salt for example comprise not the acetate of halo (M " (O for example ₂C-CH ₃) ₂), halogenated acetic acids salt, halo alkoxide and the alkoxide of halo not.The example of this class salt comprises trichloroacetic acid copper, tribromoacetic acid copper, triiodoacetic acid copper, Cu (CH ₃COCHCOCF ₃) ₂,, Cu (OOCC ₇H ₁₅) ₂, Cu (CF ₃COCHCOF ₃) ₂, Cu (CH ₃COCHCQCH ₃) ₂, Cu (CH ₃CH ₂CO ₂CHCOCH ₃) ₂, CuO (C ₅H ₆N) ₂And Cu ₃O ₃Ba ₂(O-CH ₂CF ₃) ₄In some embodiments, transition metal salt is carboxylate (for example, not the carboxylate of halo), for example the propionate of transition metal (for example, not the transition metal propionate of halo).The example of the transition metal propionate of halo is not Cu (O ₂CC ₂H ₅) ₂In some embodiments, transition metal salt is a simple salt, for example copper sulphate, copper nitrate, cupric iodide and/or cupric oxalate (copper oxylate).In some embodiments, the value of n and/or m can be 0.In some embodiments, the value of a and/or b can be 0.Exemplary and nonrestrictive lewis base comprises nitrogen-containing compound, for example ammonia and amine.The example of amine comprises CH ₃CN, C ₅H ₅N and R ₁R ₂R ₃N.R ₁, R ₂, R ₃Be H, alkyl (for example alkyl of straight chained alkyl, branched alkyl, aliphatic alkyl, non-aliphatic alkyl and/or replacement) etc. independently of one another.Do not wish to be subject to any theory, but it is believed that and in metal salt solution, exist lewis base can reduce the crosslinked of copper in the intermediate forming process.It is believed that this be because lewis base can with copper ion coordination (for example selective coordination), thereby reduce the crosslinked ability of copper.

Usually,, heat then on metal salt solution paint surface (for example buffer-layer surface) by for example spin coating, dip-coating, knitmesh coating (web coating), slit coating, gravure coating or other technology well known by persons skilled in the art.

In site 1140 subsequently, precursor component is decomposed.When the precursor component comprises at least a fluorine-containing salt, carry out first step heating steps, make described organic metal molecular breakdown generate one or more oxyfluoride intermediates of required superconductor material.

Usually, the initial temperature in this step is about room temperature, and final temperature is about 190-210 ℃, preferably is about 200 ℃.Preferably, this step uses the heating rate at least about 5 ℃/minute to carry out, and heating rate more preferably is at least about 10 ℃/minute, most preferably is at least about 15 ℃/minute.In this step, the dividing potential drop of steam preferably remains on about 5-50 holder in the nominal gaseous environment, is more preferably the 5-30 holder, is most preferably the 20-30 holder.Oxygen partial pressure in the described nominal gaseous environment remains on about 0.1-760 holder, preferably remains on about 730-740 holder.

Heating rate with about 0.05-5 ℃/minute (for example about 0.5-1 ℃/minute) continues to be heated to about 200-290 ℃ then.Preferably, the gaseous environment in this heating steps is substantially identical with this sample used nominal gaseous environment when initial temperature is heated to about 190-215 ℃.

Continue to be heated to about 650 ℃, perhaps more preferably be heated to about 400 ℃, to form the oxyfluoride intermediate.This step is preferably with at least about 2 ℃/minute, more preferably at least about 3 ℃/minute, most preferably carries out at least about 5 ℃/minute heating rate.Preferably, the gaseous environment in this heating steps is substantially identical with this sample used nominal gaseous environment when initial temperature is heated to about 190-215 ℃.

In other execution mode, (for example steam air pressure is about the 5-30 holder by the steam air pressure in about 5-50 holder, perhaps be about 10-25 holder) under the solution of drying is heated to about 190-215 ℃ (for example about 210 ℃) from initial temperature (for example room temperature), to form barium fluoride.The nominal dividing potential drop of oxygen can be about for example 0.1-760 holder.In these execution modes, under the water vapour pressure of approximately 5-50 holder (for example about 5-30 holder, perhaps about 10-25 holder), continue to be heated to about 220-290 ℃ (for example about 220 ℃).The nominal dividing potential drop of oxygen is about for example 0.1-760 holder.Under the water vapour pressure of approximately 5-50 holder (for example 5-30 holder, perhaps about 10-25 holder), be heated to about 400 ℃ then, to form barium fluoride with speed at least about 2 ℃/minute (for example, are at least about 3 ℃/minute, or are at least about 5 ℃/minute).The nominal dividing potential drop of oxygen is about for example 0.1-760 holder.

In some embodiments, the solution of drying heated with the operation that forms barium fluoride can comprise that the sample that will apply places that (for example temperature is at least about 100 ℃ in the heating furnace of preheating, be at least about 150 ℃, be at least about 200 ℃, the highlyest be about 300 ℃, the highlyest be about 250 ℃, be about 200 ℃).Gaseous environment in the described heating furnace for example can be, and total gas pressure is about 760 holders, has predetermined steam partial pressure (for example be at least about 10 holders, be at least about 15 holders, be about 25 holders at most, be about 20 holders at most, be about 17 holders), and surplus is a molecular oxygen.After the sample after the coating reaches furnace temp, can be with predetermined intensification speed (for example at least about 0.5 ℃/minute, at least about 0.75 ℃/minute, about 2 ℃/minute at most, about 1.5 ℃/minute at most, being about 1 ℃/minute) furnace temp is raise (for example to be elevated at least about 225 ℃, at least about 240 ℃, the highest about 275 ℃, the highest about 260 ℃, be about 250 ℃).This step can be carried out under the nominal gaseous environment identical with first heating steps.Then can be with predetermined heating rate (for example at least about 5 ℃/minute, at least about 8 ℃/minute, the highest about 20 ℃/minute, the highest about 12 ℃/minute, about 10 ℃/minute) temperature of the described heating furnace that further raises (for example is elevated at least about 350 ℃, is elevated at least about 375 ℃, be elevated to the highest about 450 ℃, be elevated to the highest about 425 ℃, about 450 ℃).This step can use the nominal gaseous environment identical with first heating steps to carry out.

Can form other layer of deposition on the layer of oxyfluoride intermediate membrane in the processing of process of deposition before.Treatment conditions and above-mentioned basic identical; But the dividing potential drop that is decomposed into steam in the process of oxyfluoride film is about the 5-10 holder.

Above-mentioned processing to metal salt solution can make the oxyfluoride intermediate membrane, and component metals oxide and metal fluoride are distributed in the film equably in this film.Preferably, described precursor has lower defect concentration, does not have crackle in the thickness range of intermediate substantially.Although disclosed the solution chemistry process that is used for forming barium fluoride, also other method can be used for other precursor solution.

Can heat to form required HTS layer in further 1150 pairs of superconductor intermediate membrane of treatment site then.Usually this step be by with approximately greater than 25 ℃/minute, preferred approximately greater than 100 ℃/minute, more preferably from about greater than 200 ℃/minute heating rate, be heated to about 700-825 ℃ from room temperature, preferably about 740-80 ℃, more preferably from about 750-790 ℃ is carried out.This step also can be from being used for forming about 400-650 ℃ final temperature of intermediate oxyfluoride film.In this step, process gas flows through the surface of film, carries gas reactant to film, and the gas transfer product makes it to leave film.The total pressure of the nominal gaseous environment in this step is about the 0.1-760 holder, is made up of the water vapour of the oxygen of about 0.09-50 holder, approximately 0.01-150 holder and the inert gas (nitrogen or argon gas) of approximately 0-750 holder.More preferably, the total pressure of described nominal gaseous environment is about the 0.15-5 holder, is made up of the steam of the oxygen of about 0.1-1 holder and approximately 0.05-4 holder.

Then with this film about 700 ℃-825 ℃, preferably about 740-800 ℃, more preferably from about 750-790 ℃ kept at least 5 minutes to about 120 minutes approximately, preferably at least about 15 minutes to about 60 minutes, more preferably at least about 15 minutes to about 30 minutes.In this step, process gas is carried gas reactant from film surface current mistake to film, and the gas transfer product, makes it to leave film.The total pressure of the nominal gaseous environment in this step is about the 0.1-760 holder, is made up of the steam of the oxygen of about 0.09-50 holder and approximately 0.01-150 holder and the inert gas (nitrogen or argon gas) of approximately 0-750 holder.More preferably, the total pressure of described nominal gaseous environment is about the 0.15-5 holder, is made up of the steam of the oxygen of about 0.1-1 holder and approximately 0.05-4 holder.

Be about 0.05-150 at oxygen pressure then and hold in the palm, preferably be about the 0.1-0.5 holder, be more preferably in the nominal gaseous environment of 0.1-0.2 holder, film is cooled to room temperature.

Above-mentioned processing to precursor film provides the superconductor oxidation film of nominal 123YBC stoichiometric proportion.If precursor composition contains the additive that (for example) is used to form two second phases precipitation, then stoichiometric proportion can change, and described two second phases precipitation is in order to form nanoscale anchoring site.

Randomly, in the site 1160 in accordance with known methods or the method described of U.S. Patent application 10/955801 (submission on September 29th, 2004) be carried out to silk and handle.By following this process of further having finished dealing with: site 1170 depositing noble metals, in the site 1180 carry out oxygen annealing (in the high concentration oxygen environment, 760 holder O for example ₂), 1190 carry out above-mentioned lamination and rip cutting in the site.

With reference to following examples explanation the present invention, these embodiment only are used for illustrating that they do not limit the present invention in any way.

Embodiment 1.The preparation of high Ic (ab) superconducting layer.

By restraining Y (CF with about 0.83 ₃CO ₂) ₃, about 1.60 gram Ba (CF ₃CO ₂) ₂With about 1.54 gram Cu (C ₂H ₅CO ₂) ₂Be dissolved in about 4.85 milliliters methyl alcohol (CH ₃OH) and about 0.15 milliliter propionic acid (C ₂H ₆CO ₂) in, prepared Y-123 precursor solution with stoichiometric proportion Y:Ba:Cu=1:2:3.34.Use methyl alcohol that the final volume of solution is adjusted to about 5 milliliters.

By spin coating technique, described precursor solution is deposited on (the 5 atom %) W/Y that has Ni with the rotating speed of 2000RPM ₂O ₃/ YSZ/CeO ₂Structure, have on certain-length (20 centimetres-10 meters), the wide 1 centimetre Biaxially-textured oxide buffer metal substrate.The precursor solution of deposition capacity is made the YBa that thickness is about 0.8 micron ₂Cu ₃O _7-xFilm.

By being 2.25 at diameter " tube furnace in; heat under the following conditions; make the decomposed sample of described coating become intermediary metal oxyfluoride film: to be heated to about 200 ℃ from room temperature; to be heated to about 250 ℃ with about 0.9 ℃/minute speed from about 200 ℃ then; to be heated to about 400 ℃ with about 5 ℃/minute speed from about 250 ℃ then; heating is carried out in the gaseous environment that flows with about 15 ℃/minute speed, total gas pressure is about 760 holders (water vapour pressure is about 24 holders, and surplus is an oxygen).

Then described metal oxyfluoride film is carried out heat treated, to form oxide superconductor.In tube furnace, (water vapour pressure is about 90 millitorrs to be about 240 millitorrs at total gas pressure, oxygen pressure is about 150 millitorrs) condition under, the intermediate membrane of length being lacked (1-2 centimetre) with about 200 ℃/minute speed is heated to about 785 ℃, and keeps about 30 minutes.After keeping 30 minutes, from gaseous environment, remove H ₂The O steam is cooled to room temperature with described film then in the oxygen of about 150 millitorrs.The thickness of the film that makes is about 0.8 micron.

Embodiment 2.Use 50 moles of excessive Er-Y123 of % to prepare high Ic (c) superconductor layer.

By restraining Y (CF with about 0.83 ₃CO ₂) ₃, about 0.138 gram Er (CH ₃CO ₂) ₃, about 1.60 gram Ba (CF ₃CO ₂) ₂With about 1.28 gram Cu (C ₂H ₅CO ₂) ₂Be dissolved in about 4.85 ml methanol (CH ₃OH) and about 0.15 milliliter of propionic acid (C ₂H ₆CO ₂) in, the preparation precursor solution.Use methyl alcohol that the final volume of this solution is adjusted to about 5 milliliters.

As this precursor of coating as described in the embodiment 1, make its decomposition, and handle, silver coating.The film of gained has the surface of level and smooth light, has wonderful about 2.6 microns thicker thickness, on cover single coating.The x x ray diffraction collection of illustrative plates of telolemma shows and has (001) textured Y (Er) Ba ₂Cu ₃O _7-x

Embodiment 3. has the preparation of the superconducting layer of the different bilayer coatings of forming.

By restraining Y (CF with about 0.85 ₃CO ₂) ₃, about 1.45 gram Ba (CF ₃CO ₂) ₂With about 1.35 gram Cu (C ₂H ₅CO ₂) ₂Be dissolved in about 4.85 ml methanol (CH ₃OH) and about 0.15 milliliter of propionic acid (C ₂H ₆CO ₂) in, preparation has substrate (baseline) the YBCO precursor solution of stoichiometric proportion Y:Ba:Cu=1:2:3.23.With methyl alcohol the final volume of this solution is adjusted to Y concentration and is about 0.4 molar concentration.

By restraining Dy (CH with about 1.70 ₃CO ₂) ₃With about 1.90 ml methanol (CH ₃OH) be dissolved in about 20 milliliters of substrate solution the YBCO precursor solution of interpolation 50% dysprosium of preparation stoichiometric proportion Y:Dy:Ba:Cu=1:0.5:2:3.23.With methyl alcohol the final volume of this solution is adjusted to Y concentration and is about 0.3 molar concentration.

By the slot die coating technology the described precursor solution that has added 50%Dy is deposited on (the 5 atom %) W/Y that has Ni ₂O ₃/ YSZ/CeO ₂On the Biaxially-textured oxide buffer metal substrate of structure.Coating is to form the REBa of 0.8 micron thickness on the buffering substrate ₂Cu ₃O _7-xFilm is the described solution of the amount of target.

By being 2.25 at diameter " tube furnace in; be about at total gas pressure that (water vapour pressures of about 17.5 holders and the oxygen of surplus) heats according to following mode under the flowing gas environment of 760 holders; make the decomposed sample that applied become intermediary metal oxyfluoride film: to be heated to about 200 ℃ from room temperature; be heated to about 250 ℃ with about 0.9 ℃/minute speed from about 200 ℃ then, be heated to about 400 ℃ with about 5 ℃/minute speed from about 250 ℃ then with about 15 ℃/minute speed.

Substrate YBCO precursor solution with above-mentioned preparation applies described metal oxyfluoride film then, obtains final thickness and be 0.6 micron YBa ₂Cu ₃O _x

By above-mentioned mode the band after the coating is decomposed once more, forming the intermediary metal oxyfluoride, its difference is, this time H ₂The O steam pressure is controlled at and is about 9.2 holders.

Band after decomposing is heat-treated, to form oxide superconductor.The front and rear of this band all is connected with 4 meters NiW pilot tapes of similar coating, to form the environment of homogeneous and contrast in course of reaction.Make then band according to following parameter 785 ℃ of reactions.This band is warming up to 785 ℃ with about 285 ℃/minute average heating rate.In course of reaction, total pressure is controlled at and is about 1 holder.H ₂The O dividing potential drop is about 800 millitorrs, and oxygen partial pressure is about 200 millitorrs.Reaction time is about 11 minutes.In cooling procedure, the total pressure that is adopted is about 1 holder, and wherein oxygen partial pressure is about 200 millitorrs, N ₂Dividing potential drop is about 800 millitorrs.

The about 3 microns Ag protective layer of coating is annealed in the oxygen atmosphere of 760 holders then on reacted film.The film that makes is about 500/ centimetre-width at 77K, Ic under field condition, and perhaps Jc is about 4 megampere/square centimeters.Shown under 75K, 1 tesla's condition the graph of a relation between critical current (Ic) and the magnetic field orientating (Θ) among Figure 12.Under 75K and 1 tesla's condition, when magnetic field perpendicular to when being parallel to sample surfaces, the Ic of HTS lead be respectively 114 peaces/centimetre-width and 178 peaces/centimetre-width.This expression anisotropy is about 1.5.

List of references

Following bibliographic reference is incorporated into herein: that authorized on July 27th, 1993 is entitled as ＂ is prepared oxide superconducting film (the Preparation of Highly Textured OxideSuperconducting Films from MOD Precursor Solutions) ＂ of highly-texturedization by the MOD precursor solution United States Patent (USP) the 5th, 231, No. 074; That authorized on February 8th, 2000 is entitled as the United States Patent (USP) the 6th of low vacuum method (Low Vacuum Process for Producing Superconductor Articleswith Epitaxial Layers) ＂ that ＂ production has the superconducting article of epitaxial loayer, 022, No. 832; No. the 6th, 027,564, the United States Patent (USP) of low vacuum method (the Low Vacuum Process for Producing EpitaxialLayers) ＂ that is entitled as ＂ generation epitaxial loayer that on February 22nd, 2000 authorized; That authorizes February 20 calendar year 2001 is entitled as the United States Patent (USP) the 6th that ＂ is deposited on the film with rock salt shape structure (the Thin Films Having Rock-Salt-LikeStructure Deposited on Amorphous Surfaces) ＂ on the amorphous surfaces, 190, No. 752; The PCT of the disclosed ＂ of being entitled as alloy material on October 5th, 2000 (Alloy Materials) ＂ discloses WO00/58530 number; The PCT of the disclosed ＂ of being entitled as alloy material on October 5th, 2000 (Alloy Materials) ＂ discloses WO/58044 number; The PCT that on April 8th, 1999, the disclosed ＂ of being entitled as had substrate (Substrates with Improved Oxidation Resistance) ＂ of the oxidative resistance of improvement discloses WO99/17307 number; The PCT that on April 8th, 1999, the disclosed ＂ of being entitled as was used for substrate (Substrates forSuperconductors) ＂ of superconductor discloses WO No. 99/16941; The PCT that on December 23rd, 1998, the disclosed ＂ of being entitled as metal oxyfluoride was converted into controlled conversion (the Controlled Conversionof Metal Oxyfluorides into Superconducting Oxides) ＂ of superconducting oxide discloses WO98/58415 number; The PCT of February 15 the calendar year 2001 disclosed ＂ of being entitled as multilayer product and manufacture method thereof (Multi-Layer Articles and Methods of Making Same) ＂ discloses WO01/11428 number; The PCT of February 1 the calendar year 2001 disclosed ＂ of being entitled as multilayer product and manufacture method thereof (Multi-Layer Articles And Methods Of Making Same) ＂ discloses WO01/08232 number; The PCT of method and composition (the Methods And Compositions For Making A Multi-Layer Article) ＂ of the disclosed ＂ of being entitled as manufacturing on February 1 calendar year 2001 multilayer product discloses WO01/08235 number; The PCT of conductor thick film precursor (the Coated Conductor Thick Film Precursor) ＂ of the disclosed ＂ of being entitled as coating on February 1 calendar year 2001 discloses WO No. 01/08236; The PCT of conductor (CoatedConductors With Reduced A.C.Loss) ＂ of coating that February 1 calendar year 2001, the disclosed ＂ of being entitled as had an A.C. loss of minimizing discloses WO No. 01/08169; March 1 calendar year 2001, the PCT of the disclosed ＂ of being entitled as surface control alloy substrate and manufacture method (Surface ControlAlloy Substrates And Methods Of Manufacture Therefore) ＂ thereof disclosed WO01/15245 number; The PCT of formation (the Enhanced Purity Oxide Layer Formation) ＂ of the oxide skin(coating) of the disclosed ＂ of being entitled as purity raising on February 1 calendar year 2001 discloses WO01/08170 number; April 12 calendar year 2001, the PCT of control (Control of OxideLayer Reaction Rates) ＂ of the disclosed ＂ of being entitled as oxide skin(coating) reaction rate disclosed WO No. 01/26164; The PCT of the disclosed ＂ of being entitled as oxide skin(coating) method on April 12 calendar year 2001 (Oxide Layer Method) ＂ discloses WO No. 01/26165; February 1 calendar year 2001, the PCT of high temperature coated superconductor (the Enhanced HighTemperature Coated Superconductors) ＂ that the disclosed ＂ of being entitled as strengthens disclosed WO No. 01/08233; The PCT of method (the Methods of Making ASuperconductor) ＂ of the disclosed ＂ of being entitled as manufacturing on February 1 calendar year 2001 superconductor discloses WO No. 01/08231; The PCT of on April 20th, the 2002 disclosed ＂ of being entitled as precursor solution and using method thereof (Precursor Solutions and Methods of UsingSame) ＂ discloses WO No. 02/35615; The United States Patent (USP) the 6th of texturing product (the Oxide Bronze Compositions AndTextured Articles Manufactured In Accordance Therewith) ＂ that is entitled as ＂ oxide bronze composition and makes thus that on August 20th, 2002 authorized, 436, No. 317; No. the 60/309th, 116, the U.S. Provisional Patent Application of submitting to July 31 calendar year 2001 that is entitled as ＂ multilayer superconductor and manufacture method (Multi-Layer Superconductors and Methods Of Making Same) ＂ thereof; No. the 6797313rd, the United States Patent (USP) that is entitled as ＂ superconductor method and reactor (Superconductor Methods and Reactor) ＂ of authorizing on September 28th, 2004; That submitted on November 18th, 1999 is entitled as the ＂ superconducting article and makes the composition of this product and No. the 60/166th, 297, the U.S. Provisional Patent Application of method (Superconductor Articles and Compositions and Methods for Making Same) ＂; And on December 13rd, 2005 authorize be entitled as the ＂ superconducting article and make the composition of this product and No. the 6974501st, the United States Patent (USP) of owning together of method (Superconductor Articles and Compositionsand Methods for Making Same) ＂; On March 24th, 2005 is disclosed to be entitled as U.S. Patent application 2005-0065035 number of ＂ superconductor method and reactor (Superconductor Methods andReactors) ＂; In on February 23rd, 2006 disclosed being entitled as, " low AC lost U.S. Patent Publication 2006-0040830 number of the superconductor (Low AC Loss Filamentary CoatedSuperconductors ") of thread coating; No. the 10/955801st, the U.S. Patent application of submitting on September 29th, 2004 that is entitled as " filamentary superconductor that piles up (Stacked Filamentary Superconductors) "; The U.S. Patent application (not giving application number as yet) that is entitled as " manufacturing of the high temperature superconductor wire of sealing (Fabrication of Sealed High Temperature SuperconductorWires) " that on July 21st, 2006 submitted to; And the U.S. Provisional Patent Application (not giving application number as yet) that is entitled as " containing the high electric current of hts band, closely knit flexible conductor (High Current, CompactFlexible Conductors Containing High Temperature Superconducting Tapes) " of submission on July 21st, 2006; The U.S. Provisional Patent Application (not giving application number as yet) that is entitled as " low resistance that is used for high temperature superconductor wire engages (Low Resistance Splicefor High TemperatureSuperconductor Wires) " that on July 21st, 2006 submitted to; The U.S. Provisional Patent Application (not giving application number as yet) that is entitled as " high-temperature superconductor and manufacture method (High Temperature Superconductor Having Planar Magnetic Flux PinningCenters and Methods for Making the Same) thereof " that on July 24th, 2006 submitted to magnetic flux anchoring center, plane; These articles all are incorporated by reference into herein.

Other execution mode is in claims.

Claims

1. superconductivity wire, it comprises:

Be arranged at least the first superconducting layer and second superconducting layer on one or more substrates with stacked relation;

Described first superconducting layer comprises first high temperature superconducting oxide, this first high temperature superconducting oxide is chosen as can provide the critical current that is parallel to this superconductor layer surface first predetermined than (Ic (ab)/Ic (c)) with perpendicular to the critical current on this superconductor layer surface

Described second superconducting layer comprises the second high-temperature superconductor layer, and this second high-temperature superconductor layer is chosen as can provide the critical current that is parallel to this superconductor layer surface second predetermined than (Ic (ab)/Ic (c)) with perpendicular to the critical current on this superconductor layer surface,

Described first and second superconductor layers are provided at the predetermined total critical current Ic on the magnetic field orientating of selection together.

2. superconductive wire as claimed in claim 1 is characterized in that, described first or second high-temperature superconductor is chosen as the magnetic field that can be provided at perpendicular to superconducting layer surface orientation (H//c) and has the critical current (Ic (c)) that strengthens down.

3. superconductive wire as claimed in claim 2 is characterized in that, in 1 tesla that applies or stronger magnetic field, Ic (ab)/Ic's (c) is first predetermined than being less than or equal to 2.6.

4. superconductive wire as claimed in claim 2 is characterized in that, in 1 tesla that applies or stronger magnetic field, Ic (ab)/Ic's (c) is first predetermined than less than 2.0.

5. superconductive wire as claimed in claim 2 is characterized in that, in 1 tesla that applies or stronger magnetic field, Ic (ab)/Ic's (c) is first predetermined than less than 1.5.

6. as claim 3,4 or 5 described superconductive wires, it is characterized in that the magnetic field that applies is about 1 tesla of tesla to 6.

7. superconductive wire as claimed in claim 2 is characterized in that described high-temperature superconductor comprises rare earth-alkaline earth-Cu oxide, and wherein said rare earth comprises two or more rare earth elements.

8. superconductor as claimed in claim 7 is characterized in that described rare earth-alkaline earth-Cu oxide comprises yttrium, and the amount of yttrium surpasses makes rare earth-alkaline earth-copper meet the required amount of stoichiometric proportion.

9. superconductive wire as claimed in claim 7 is characterized in that described rare earth element comprises one or more in erbium and the holmium.

10. superconductive wire as claimed in claim 9 is characterized in that, the content of one or more in described erbium and the holmium is 25-150% of the stoichiometric amount of rare earth-alkaline earth-Cu oxide middle rare earth.

11. superconductive wire as claimed in claim 10 is characterized in that, described rare earth element also comprises yttrium.

12. superconductive wire as claimed in claim 2, it is characterized in that, described high-temperature superconductor comprises rare earth-alkaline earth-Cu oxide and at least a two second phase nano particles, and described two second phase nano particles comprise and are positioned at the intragranular containing metal compound of oxide superconductor.

13. superconductive wire as claimed in claim 12 is characterized in that, described two second phase nano particles comprise one or more in rare earth element, alkaline-earth metal and the transition metal.

14. superconductive wire as claimed in claim 12 is characterized in that, described two second phase nano particles are selected from down group: zirconia, aluminium oxide, Y ₂Cu ₂O ₅, Y ₂BaCuO ₄, magnesium oxide, BaZrO ₃, silver and CeO ₂

15. superconductive wire as claimed in claim 2 is characterized in that, the first or second high-temperature superconductor composition is chosen as and is provided at the critical current (Ic) that strengthens under the magnetic field existence that is parallel to superconducting layer surface orientation (H//ab).

16. superconductive wire as claimed in claim 15 is characterized in that, in 1 tesla that applies or stronger magnetic field, Ic (ab)/Ic's (c) is second predetermined than greater than 2.5.

17. superconductive wire as claimed in claim 15 is characterized in that, in 1 tesla that applies or stronger magnetic field, Ic (ab)/Ic's (c) is second predetermined than greater than 3.5.

18. superconductive wire as claimed in claim 15 is characterized in that, in 1 tesla that applies or stronger magnetic field, Ic (ab)/Ic's (c) is second predetermined than greater than 5.5.

19., it is characterized in that the magnetic field that applies is about 1 tesla of tesla to 6 as claim 16,17 or 18 described superconductive wires.

20. superconductive wire as claimed in claim 15 is characterized in that, described high-temperature superconductor comprises rare earth-alkaline earth-Cu oxide, and wherein the ratio of copper and alkaline earth is greater than 1.5.

21. superconductive wire as claimed in claim 1 is characterized in that, the thickness difference of described first and second superconductor layers.

22. superconductive wire as claimed in claim 1 is characterized in that, the thickness of described first and second superconductor layers is chosen as total critical current predetermined in the magnetic field orientating that is provided at selection.

23. superconductive wire as claimed in claim 1 is characterized in that, the magnetic field orientating of described selection is between 0 ° (H//c) and 90 ° (H//ab).

24. superconductivity wire as claimed in claim 1 is characterized in that, described first superconducting layer is arranged on the upper surface of substrate, described second superconducting layer is arranged on the lower surface of substrate.

25. superconductivity wire as claimed in claim 24 is characterized in that, at least one first resilient coating is arranged between the upper surface and first superconducting layer of substrate, at least one second resilient coating is arranged between the lower surface and second superconducting layer of substrate.

26. superconductivity wire as claimed in claim 1 is characterized in that, described second superconductor layer covers described first superconductor layer.

27. superconductivity wire as claimed in claim 26 is characterized in that, conductive layer is arranged between described first and second superconducting layers.

28. superconductivity wire as claimed in claim 27 is characterized in that, described conductive layer comprises copper.

29. superconductivity wire as claimed in claim 26 is characterized in that, one or more resilient coatings are arranged between the described substrate and first superconducting layer.

30. superconductive wire as claimed in claim 1 is characterized in that, described lead also comprises:

The element of first coating, it comprises:

First substrate,

Being positioned at being used on first substrate supports at least one first resilient coating of first superconducting layer,

Be positioned at first coat of metal on first superconductor layer;

The element of second coating, it comprises:

Second substrate,

Being positioned at being used on second substrate supports at least one second resilient coating of second superconducting layer,

Be positioned at second coat of metal on second superconductor layer.

31. superconductivity wire as claimed in claim 30 also comprises:

Intermediary's adhesive phase that the element that makes described first and second coatings between the element of first and second coatings connects at the first and second substrate places.

32. superconductivity wire as claimed in claim 31 also comprises:

Intermediary's adhesive phase that the element that makes described first and second coatings between the element of first and second coatings connects at the first and second coat of metal places.

33. a method of making high-temperature superconductor equipment, this method comprises:

One section superconductivity wire is provided, this superconductivity wire comprises: the first area that comprises high Ic (c) high-temperature superconductor composition, comprise the second area of high Ic (ab) high-temperature superconductor composition and comprise high Ic (c) high-temperature superconductor composition and the 3rd zone of the mixture of high Ic (ab) high-temperature superconductor composition;

This section superconductor is arranged in the equipment, make the first area occupy in the equipment position in contact and the magnetic field of high temperature wire vertical orientated (0 °), second area occupies in the equipment position in contact and the magnetic field of high temperature wire parallel-oriented (90 °), and the 3rd zone occupies the position in contact magnetic field of orientation between 0 ° to 90 ° in the equipment.

34. method as claimed in claim 33 is characterized in that, described equipment is coil.

35. method as claimed in claim 34 is characterized in that, the first area of described high temperature superconductor wire is positioned at the end of coil.

36. method as claimed in claim 35 is characterized in that, the second area of described high temperature superconductor wire is positioned at the inside of coil.

37. method as claimed in claim 36 is characterized in that, the 3rd zone of described high temperature superconductor wire is between first area and second area.

38. a product, it comprises:

A kind of superconductivity wire, this superconductivity wire comprises a kind of high temperature superconductor layer, the magnetic field of the diverse location contact different orientation of wherein said product in product, the composition of high temperature superconductor layer changes along its length direction, to adapt to the magnetic field orientating at given position.

39. product as claimed in claim 38 is characterized in that, described product comprises coil, and wherein, in the course of the work, the contact of this coil is from being basically parallel to the induced field of superconductor layer plane in the scope that is basically perpendicular to the superconductor layer plane.

40. product as claimed in claim 39, it is characterized in that, the composition of described superconductive wire mainly comprises high Ic (c) high-temperature superconductor composition, said composition at the coil meta in the first area that contacts in the course of the work perpendicular to the magnetic field on superconducting layer surface.

41. product as claimed in claim 40, it is characterized in that, the composition of described superconductive wire mainly comprises high Ic (ab) high-temperature superconductor composition, and said composition is basically parallel in the second area in magnetic field on superconducting layer surface in contact in the course of the work at the coil meta.

42. product as claimed in claim 41, it is characterized in that, the composition of described superconductive wire comprises the mixture of high Ic (c) high-temperature superconductor composition and high Ic (ab) high-temperature superconductor composition, and this mixture is in the zone in magnetic field at 0-90 ° of angle with the superconducting layer surface in contact in the course of the work at the coil meta.