CN101510529B - Pixel structure and manufacturing method thereof - Google Patents
Pixel structure and manufacturing method thereof Download PDFInfo
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- CN101510529B CN101510529B CN2009100065325A CN200910006532A CN101510529B CN 101510529 B CN101510529 B CN 101510529B CN 2009100065325 A CN2009100065325 A CN 2009100065325A CN 200910006532 A CN200910006532 A CN 200910006532A CN 101510529 B CN101510529 B CN 101510529B
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Abstract
The invention discloses a pixel structure which comprises a first patterned metal layer, a grid insulation layer, a semiconductor channel layer, a second patterned metal layer, a protective layer, a plurality of first contact holes and second contact holes, and a conductive layer. The first contact holes and the second contact holes are simultaneously formed on partial regions of the first patterned metal layer and the second patterned metal layer. Grid lines in the second patterned metal layer pass through the first contact holes and the second contact holes through the conductive layer so as to be electrically connected with a grid extension electrode in the first patterned metal layer. A source electrode in the second patterned metal layer passes through the first contact holes and the second contact holes through the conductive layer so as to be electrically connected with a data wire section in the first patterned metal layer. In addition, the invention also discloses a manufacture method of the pixel structure.
Description
Technical field
The present invention relates to a kind of liquid crystal display structure and manufacture method thereof, relate in particular to dot structure and manufacture method thereof in a kind of LCD.
Background technology
For LCD, wherein the size of pixel aperture ratio can directly have influence on the utilance of backlight, also can influence the display brightness of display, and influences the main factor of aperture opening ratio designed size, is the distance between pixel electrode and the data wire.But, too approaching when pixel electrode and data wire, stray capacitance therebetween can become greatly, causes filling on the pixel electrode full electric charge before next picture conversion, can be affected because of data wire transmits varying voltage signal, and then produce crosstalk effect (cross talk).
Prior art is to add one deck common electrode between pixel electrode and data wire, and the common electrode that passes through to be added covers the effect that stray capacitance Cpd is produced.Yet, make dot structure with said method, not only need to use the insulating barrier of multilayer, more need extra metal level to be used as covering the common electrode of usefulness simultaneously.Thus, not only make the step of technology and complexity increase, also directly increased time and the cost made.
Summary of the invention
The objective of the invention is is providing a kind of one pixel structure process method, so as to saving the Production Time and the cost of dot structure.
The objective of the invention is is providing a kind of dot structure, so as to obtaining preferable pixel display quality.
For achieving the above object, the invention provides a kind of one pixel structure process method, it comprises: form one first patterned metal layer on a substrate, wherein first patterned metal layer comprises a grid, a grid extension electrode, one first data line segment and one second data line segment; Forming a gate insulator is covered on the substrate and first patterned metal layer; Form the semiconductor channel layer on the gate insulator of grid top; Form one second patterned metal layer on gate insulator and channel semiconductor layer, wherein second patterned metal layer comprises one source pole, a drain electrode, a gate line and a common electrode, and on source electrode and the channel semiconductor layer of drain electrode corresponding to top, grid both sides, common electrode is positioned at the top of the first data line segment; Forming a protective layer is covered on the gate insulator and second patterned metal layer; Form a plurality of first contact holes and a plurality of second contact hole simultaneously, wherein those first contact holes expose the grid extension electrode and the second data line segment in first patterned metal layer respectively, and those second contact holes expose gate line, part source electrode and part drain electrode in second patterned metal layer respectively; And form a conductive layer and cover those first contact holes and those second contact holes, make the gate line in second patterned metal layer electrically connect, and the source electrode in second patterned metal layer electrically connect by the second data line segment of conductive layer in first contact hole and second contact hole and first patterned metal layer by the grid extension electrode of conductive layer in first contact hole and second contact hole and first patterned metal layer.
For achieving the above object; the invention provides a kind of dot structure, it comprises one first patterned metal layer, a gate insulator, semiconductor channel layer, one second patterned metal layer, a protective layer, a plurality of first contact hole and second contact hole and a conductive layer.First patterned metal layer is disposed on the substrate, and comprises a grid, a grid extension electrode, one first data line segment and one second data line segment.Gate insulator is covered on the substrate and first patterned metal layer.The channel semiconductor layer is disposed on the gate insulator of grid top.Second patterned metal layer is disposed on gate insulator and the channel semiconductor layer, and comprise one source pole, a drain electrode, a gate line and a common electrode, wherein source electrode and drain electrode are positioned on the channel semiconductor layer of top, corresponding grid both sides, and common electrode is positioned at the top of the first data line segment.Protective layer is covered on the gate insulator and second patterned metal layer.Those first contact holes and second contact hole are formed on the subregion and the subregion on second patterned metal layer on first patterned metal layer simultaneously, and those first contact holes expose the grid extension electrode and the second data line segment in first patterned metal layer, and those second contact holes expose gate line, source electrode and the drain electrode in second patterned metal layer.Conductive layer covers those first contact holes and those second contact holes, and the gate line in second patterned metal layer electrically connects by the grid extension electrode of conductive layer in first contact hole and second contact hole and first patterned metal layer, and the source electrode in second patterned metal layer electrically connects by the second data line segment of conductive layer in first contact hole and second contact hole and first patterned metal layer.
According to technology contents of the present invention, application of aforementioned dot structure and manufacture method thereof can reduce and make required step and the complexity of dot structure, lower Production Time and cost.
Figure 1A to Fig. 1 E for illustrate according to embodiments of the invention a kind of dot structure its make flow process on look schematic diagram.
Fig. 2 A to Fig. 2 E is for being respectively among Figure 1A to Fig. 1 E the generalized section that is illustrated along hatching line AA ', hatching line BB ' and hatching line CC '.
Wherein, Reference numeral:
| 102: substrate | 110: the first patterned metal layers |
| 112: grid | 114: the first data line segments |
| 116: the second data line segments | 118: the grid extension electrode |
| 120: gate insulator | 124: the channel semiconductor layer |
| 128: doped |
128a: ohmic contact layer |
| 130: the second patterned metal layers | 132: source electrode |
| 134: drain electrode | 136: gate line |
| 138: common electrode | 140: protective layer |
| 144: the first contact holes | 146: the second contact holes |
| 150: |
150a: gate |
| 150b: data |
150c: pixel electrode |
Embodiment
Figure 1A to Fig. 1 E for illustrate according to embodiments of the invention a kind of dot structure its make flow process on look schematic diagram, Fig. 2 A to Fig. 2 E is respectively among Figure 1A to Fig. 1 E the generalized section that is illustrated along hatching line AA ', hatching line BB ' and hatching line CC '.At first, shown in Figure 1A and Fig. 2 A, on substrate 102, form first patterned metal layer 110, wherein first patterned metal layer 110 comprise grid 112, the first data line segment 114, the second data line segment 116 with grid extension electrode 118, and the first data line segment 114 and the second data line segment 116 distinctly refer to the different piece of data wire under hatching line BB ' and hatching line AA '.Aspect the material of selecting for use, substrate 102 can be glass substrate or plastic base, and first patterned metal layer 110 then can be aluminium, copper, silver, gold ... the composition metal that waits metal or above-mentioned metal to constitute.
Then, shown in Figure 1B and Fig. 2 B, on the substrate 102 and first patterned metal layer 110, form gate insulator 120, to be covered on the substrate 102 and first patterned metal layer 110, and on the gate insulator 120 of grid 112 tops, form patterning channel semiconductor layer 124 and on the doped semiconductor material layer 128 (as: N type doped semiconductor material layer) of patterning.Wherein, the material of gate insulator 120 can be dielectric materials such as silicon dioxide, silicon nitride or silicon oxynitride.
Moreover, shown in Fig. 1 C and Fig. 2 C, gate insulator 120, channel semiconductor layer 124 and on doped semiconductor material layer 128 on form second patterned metal layer 130, wherein second patterned metal layer 130 comprises source electrode 132, drain electrode 134, gate line 136 and common electrode 138, and second patterned metal layer 130 also can be aluminium, copper, silver, gold ... the composition metal that waits metal or above-mentioned metal to constitute.In the process that forms second patterned metal layer 130, the doped semiconductor material layer 128 of part can be removed, and the subregion of exposing channel semiconductor layer 124, to form ohmic contact layer 128a.In addition, source electrode 132 and drain electrode 134 correspond respectively to grid 112 with the both sides of the channel semiconductor layer 124 of grid 112 tops, common electrode 138 then is the top that is positioned at the first data line segment 114.It should be noted that at this above-mentioned source electrode 132 can exchange name with drain electrode 134 and be called drain electrode and source electrode according in fact different designs or name.
Then; shown in Fig. 1 D and Fig. 2 D; on completed structure, form protective layer 140 to cover thereon; protective mulch 140 on the channel semiconductor layer 124 that gate insulator 120, second patterned metal layer 130 and part are exposed for example, wherein the material of protective layer 140 can be dielectric materials such as silicon dioxide, silicon nitride or silicon oxynitride.Then, on the subregion on the subregion on first patterned metal layer 110 and second patterned metal layer 130, form first contact hole 144 and second contact hole 146 simultaneously, wherein first contact hole 144 exposes the subregion of grid extension electrode 118 and the second data line segment 116 in first patterned metal layer 110 respectively, and second contact hole 146 then exposes the subregion of gate line 136 in second patterned metal layer 130, the subregion of drain electrode 134 and the subregion of source electrode 132 respectively.
In addition; the above-mentioned step that forms first contact hole 144 and second contact hole 146 simultaneously; can utilize and finish with photo-marsk process; and the gate insulator 120 and the protective layer 140 of first patterned metal layer, 130 tops carried out etching (as: lithography), to expose corresponding part respectively.Specifically; in the step of above-mentioned formation first contact hole 144; the gate insulator 120 of more removable grid extension electrode 118 tops and the subregion of protective layer 140; so as to exposed portions serve grid extension electrode 118; and remove the gate insulator 120 of the second data line segment, 116 tops and the subregion of protective layer 140, so as to the exposed portions serve second data line segment 116.On the other hand, in the step of above-mentioned formation second contact hole 146, the partial protection layer 140 of more removable gate line 136 tops, source electrode 132 tops and 134 tops that drain is so as to exposing gate line 136, source electrode 132 and 134 the subregion of draining.
Afterwards, shown in Fig. 1 E and Fig. 2 E, form conductive layer 150 again and cover above-mentioned first contact hole 144 and second contact hole 146, make gate line 136 in second patterned metal layer 130, by conductive layer 150 through first contact hole 144 and second contact hole 146, electrically connect with the grid extension electrode 118 in first patterned metal layer 110, and make source electrode 132 in second patterned metal layer 130,, electrically connect through first contact hole 144 and second contact hole 146 by conductive layer 150 with the second data line segment 116 in first patterned metal layer 110.Wherein, conductive layer 150 can be patterned transparent conductive layer, and the material of patterned transparent conductive layer can be transparent conductive materials such as indium tin oxide or indium-zinc oxide.Thus, just can simplify processing step effectively, and reduce the material of the required use of technology.
In addition, with above-mentioned conductive layer 150, it more can comprise gate line connection electrode 150a, data wire connection electrode 150b and pixel electrode 150c, wherein gate line connection electrode 150a electrically connects gate line 136 and grid extension electrode 118, data wire connection electrode 150b is for electrically connecting the source electrode 132 and the second data line segment 116, and pixel electrode 150c then is second contact hole 146 that covers in the drain electrode 134.
By the embodiment of the invention described above as can be known, application of aforementioned dot structure and manufacture method thereof can reduce and make required step and the complexity of dot structure, lower Production Time and cost.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (14)
1. an one pixel structure process method is characterized in that, comprises:
Form one first patterned metal layer on a substrate, this first patterned metal layer comprises a grid, a grid extension electrode, one first data line segment and one second data line segment;
Forming a gate insulator is covered on this substrate and this first patterned metal layer;
Form the semiconductor channel layer on this gate insulator of this grid top;
Form one second patterned metal layer on this gate insulator and this channel semiconductor layer, this second patterned metal layer comprises one source pole, a drain electrode, a gate line and a common electrode, wherein on this source electrode and this drain electrode this channel semiconductor layer corresponding to this top, grid both sides, this common electrode is positioned at the top of this first data line segment;
Forming a protective layer is covered on this gate insulator and this second patterned metal layer;
Form a plurality of first contact holes and a plurality of second contact hole simultaneously, wherein those first contact holes expose this grid extension electrode and this second data line segment in this first patterned metal layer respectively, and those second contact holes expose this gate line, this source electrode of part and this drain electrode of part in this second patterned metal layer respectively; And
Form a conductive layer and cover those first contact holes and those second contact holes, make this gate line in this second patterned metal layer electrically connect, and this source electrode in this second patterned metal layer electrically connect by this conductive layer this second data line segment in this first contact hole and this second contact hole and this first patterned metal layer by this conductive layer this grid extension electrode in this first contact hole and this second contact hole and this first patterned metal layer.
2. one pixel structure process method according to claim 1 is characterized in that, the step that forms those first contact holes and those second contact holes simultaneously more comprises:
This gate insulator and this protective layer of this first patterned metal layer top of etching.
3. one pixel structure process method according to claim 1 is characterized in that, this conductive layer is a patterned transparent conductive layer.
4. one pixel structure process method according to claim 1 is characterized in that, this conductive layer comprises a gate line connection electrode, and this gate line connection electrode electrically connects this gate line and this grid extension electrode.
5. one pixel structure process method according to claim 1 is characterized in that, this conductive layer comprises a data wire connection electrode, and this data wire connection electrode electrically connects this source electrode and this second data line segment.
6. one pixel structure process method according to claim 1 is characterized in that, the step utilization that forms those first contact holes and those second contact holes is simultaneously finished with photo-marsk process.
7. one pixel structure process method according to claim 1 is characterized in that, forms those first contact holes and comprises with the step of exposing this grid extension electrode in this first patterned metal layer and this second data line segment respectively:
This gate insulator of part and this protective layer that remove this gate insulator of part and this protective layer of this grid extension electrode top and remove this second data line segment top.
8. one pixel structure process method according to claim 1 is characterized in that, forms those second contact holes and comprises with the step of exposing this gate line, this source electrode of part and this drain electrode of part in this second patterned metal layer respectively:
Remove this protective layer of part of this gate line top, this source electrode top and this drain electrode top.
9. one pixel structure process method according to claim 1 is characterized in that this conductive layer comprises a pixel electrode, and this pixel electrode covers this second contact hole in this drain electrode.
10. a dot structure is characterized in that, comprises:
One first patterned metal layer is disposed on the substrate, and comprises a grid, a grid extension electrode and one first data line segment and one second data line segment;
One gate insulator is covered on this substrate and this first patterned metal layer;
The semiconductor channel layer is disposed on this gate insulator of this grid top;
One second patterned metal layer, be disposed on this gate insulator and this channel semiconductor layer, and comprise one source pole, a drain electrode, a gate line and a common electrode, wherein this source electrode and this drain electrode are positioned on this channel semiconductor layer of corresponding this top, grid both sides, and this common electrode is positioned at the top of this first data line segment;
One protective layer is covered on this gate insulator and this second patterned metal layer;
A plurality of first contact holes and second contact hole, be formed at simultaneously on the subregion and the subregion on this second patterned metal layer on this first patterned metal layer, those first contact holes expose this grid extension electrode and this second data line segment in this first patterned metal layer, and those second contact holes expose this gate line, this source electrode and this drain electrode in this second patterned metal layer; And
One conductive layer, cover those first contact holes and those second contact holes, this gate line in this second patterned metal layer electrically connects by this conductive layer this grid extension electrode in this first contact hole and this second contact hole and this first patterned metal layer, and this source electrode in this second patterned metal layer electrically connects by this conductive layer this second data line segment in this first contact hole and this second contact hole and this first patterned metal layer.
11. dot structure according to claim 10 is characterized in that, this conductive layer is a patterned transparent conductive layer.
12. dot structure according to claim 10 is characterized in that, this conductive layer comprises a gate line connection electrode, and this gate line connection electrode electrically connects this gate line and this grid extension electrode.
13. dot structure according to claim 10 is characterized in that, this conductive layer comprises a data wire connection electrode, and this data wire connection electrode electrically connects this source electrode and this second data line segment.
14. dot structure according to claim 10 is characterized in that, this conductive layer comprises a pixel electrode, and this pixel electrode covers this second contact hole in this drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100065325A CN101510529B (en) | 2009-02-17 | 2009-02-17 | Pixel structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100065325A CN101510529B (en) | 2009-02-17 | 2009-02-17 | Pixel structure and manufacturing method thereof |
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| CN101510529A CN101510529A (en) | 2009-08-19 |
| CN101510529B true CN101510529B (en) | 2010-11-03 |
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| CN102385199B (en) * | 2010-09-03 | 2014-03-12 | 东莞万士达液晶显示器有限公司 | Liquid crystal display panel and production method thereof |
| CN102436088B (en) * | 2011-12-14 | 2015-03-25 | 深圳市华星光电技术有限公司 | Liquid crystal display device |
| CN107247376B (en) * | 2017-06-26 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of TFT substrate and manufacturing method of liquid crystal display device |
| CN114388596A (en) | 2020-10-19 | 2022-04-22 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
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