CN101510516B - Method and apparatus for bonding wafer - Google Patents
Method and apparatus for bonding wafer Download PDFInfo
- Publication number
- CN101510516B CN101510516B CN2009100303643A CN200910030364A CN101510516B CN 101510516 B CN101510516 B CN 101510516B CN 2009100303643 A CN2009100303643 A CN 2009100303643A CN 200910030364 A CN200910030364 A CN 200910030364A CN 101510516 B CN101510516 B CN 101510516B
- Authority
- CN
- China
- Prior art keywords
- wafer
- glue
- clamp
- heating plate
- anchor clamps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a method for bonding wafers, and a device thereof. The method includes the processing steps of: preparing bonding wafer glue; baking wafers to be bonded; preheating a clamp frame of a wafer to be bonded and a movable clamp on the clamp frame; putting the prepared glue onto a glued iron plate of an electric cooker for heating; arranging the heated wafer on the heating glued iron plate so as to allow that the heating glue fully dissolves and permeates into the surface of each wafer; using a tool to rub the wafer so as to ensure even permeation on the surface of the wafer; putting a steelyard weight in the clamp frame and the movable clamp on the clamp frame and then extruding the clamp by two hands so as to remove unwanted glue, while a right angle is required to be tested to be 90 degrees plus or minus 1 degree by a try square and the planeness is required to be measured to be less than 0.2mm by a knife straight edge and a feeler gauge; and taking the wafer out of the clamp after the wafer is cooled at room temperature. The method has the advantages of improving the bonding strength of the wafer as well as full dissolution and even permeation of the wafer and the glue, enhancing the leak tightness between the wafers and increasing various quality indicators of final products while reducing damage to products in the follow-up processing.
Description
Technical field
What the present invention relates to is a kind of method and device thereof that is used for bonding wafer, belongs to bonding wafer technologies field.
Background technology
The process that is used for bonding wafer in the prior art comprises following processing step:
1) configuration of bonding wafer glue: the weight ratio between each composition is a ceresine: rosin: PUR=10: 6: 6; Be put into after the mixing in the aluminium pan on heating plate, make ceresine, rosin, PUR make it fully dissolve the back and stir after make glue with 60 purpose metal filter screens in the pallet of 30cm*50cm;
2) anchor clamps of bonding wafer carry out preheating: be put into the anchor clamps that use and carry out preheating on the electric hot plate;
3) clamp stone roller that the uniform wafer of infiltration forms with long forceps and be put in the anchor clamps with the hands extrusion clamp, and with perching knife the extruding unnecessary glue that comes out, flatten then, press together.Treat at last from anchor clamps, to take out after the normal temperature cooling.
Above-mentioned defective workmanship: the intensity of bonding wafer is little, and wafer and glue can not fully dissolve, and the sealing between wafer and the wafer is poor, and postorder is processed the spoilage height of this product.
Summary of the invention
The present invention proposes a kind of method that is used for bonding wafer, is intended to overcome the above-mentioned defective of existing in prior technology, guarantees bonding wafer intensity, and wafer and glue fully dissolve, the sealing between raising wafer and the wafer and the qualification rate of product.
Technical solution of the present invention: this method comprises following processing step:
One, the configuration of bonding wafer glue: the weight ratio that each is formed: No. 85 ceresine: rosin: PUR=5: 3: 5; Be put into after the mixing on the heating plate in the aluminum pot and heat, the power 1000W of heating plate, ceresine, rosin, PUR are fully dissolved after, stir, after stirring, glue is put into the pallet of 30cm*50cm with 60 purpose metal filtration net filtrations;
Two, bonding wafer bake: wafer is put in the pallet in the roaster, and the temperature of roaster is 180 ℃ ± 10 ℃, and stoving time is 40 ± 5 minutes;
Three, fixture stand on the B electric furnace heating plate and the removable anchor clamps on the fixture stand carry out 30 ℃-50 ℃ of preheating preheat temperatures;
Four, the glue that configures is put on the A electric furnace heating plate heats 150 ℃ ± 10 ℃ of the temperature of the epoxy glue after the fusing;
Five, the wafer that has heated in the above-mentioned processing step two is put on the gummed iron plate of heating, gummed iron plate is gone up 150 ℃ ± 10 ℃ of heating-up temperatures, the glue that has configured in the above-mentioned processing step one is placed on to carry out the surface of abundant solution pervasion to each wafer on the gummed iron plate then:
Six, rubbing the crystal pulling sheet with the hands with common bamboo chopstick makes wafer even by glue penetration: make the wafer surface epoxy glue be distributed to the everywhere of wafer surface full and uniformly;
Seven, the bottom of the removable anchor clamps that preheating is good on B electric furnace heating plate and side are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, the bottom of fixture stand and side also are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, clamp stone roller that the uniform wafer of infiltration forms with long forceps then and be put in the removable anchor clamps more with the hands extrusion clamp, and the extruding unnecessary glue that comes out is shoveled with perching knife, detect squareness with square then and require 90 ° ± 1 °, detect evenness with edge of a knife chi and clearance gauge and require, treat at last from anchor clamps, to take out after the normal temperature cooling less than 0.2mm.
Be used for the bonding wafer device, its structure is that A electric furnace heating plate is provided with gummed iron plate, and B electric furnace heating plate is provided with the heating grillage, and gummed iron plate, heating grillage, fixture stand are installed on the workbench, and removable anchor clamps are arranged on the fixture stand.
Advantage of the present invention: improve the intensity of bonding wafer, the abundant dissolving and the infiltration that improve wafer and glue are even, improve the sealing between wafer and the wafer simultaneously, reduce postorder and process every quality index that the damage of this product improves final products simultaneously.
Description of drawings
Accompanying drawing 1 is the structural representation that is used for the bonding wafer device.
Among the figure 1 is gummed iron plate, the 2nd, A electric furnace heating plate, the 3rd, removable anchor clamps, the 4th, fixture stand, the 5th, B electric furnace heating plate, the 6th, heating grillage.
Embodiment
Contrast accompanying drawing, its structure are that A electric furnace heating plate 2 is provided with gummed iron plate 1, and B electric furnace heating plate 5 is provided with heating grillage 6, and gummed iron plate 1, heating grillage 6, fixture stand 4 are installed on the workbench AA, and removable anchor clamps 3 are arranged on the fixture stand 4.
Embodiment 1, wafer 25MHZ (wafer model HC-49U/S)
One, the configuration of bonding wafer glue: No. 85 ceresine 0.5kg, rosin 0.3kg, be put into after PUR 0.5kg mixes on the heating plate in the aluminum pot and heat, the power 1000W of heating plate, after ceresine, rosin, PUR are fully dissolved, stir, after stirring, glue is put into the pallet of 30cm * 50cm with 60 purpose metal filtration net filtrations;
Two, bonding wafer bake: wafer is put in the pallet in the roaster, and the temperature of roaster is 170 ℃, and stoving time is 35 minutes;
Three, fixture stand 4 on the B electric furnace heating plate and the removable anchor clamps on the fixture stand 43 carry out preheating: 30 ℃ of preheat temperatures;
Four, the glue that configures is put on the A electric furnace heating plate heats 140 ℃ of the temperature of the epoxy glue after the fusing;
Five, the wafer that has heated in the above-mentioned processing step two is put on the gummed iron plate of heating, gummed iron plate is gone up 140 ℃ of heating-up temperatures, the glue that has configured in the above-mentioned processing step one is placed on to carry out the surface of abundant solution pervasion to each wafer on the gummed iron plate then:
Six, rub the crystal pulling sheet with the hands with instrument and make the wafer infiltration evenly: make the epoxy glue on the surface of wafer be distributed to the everywhere full and uniformly;
Seven, the bottom of the removable anchor clamps that preheating is good on B electric furnace heating plate and side are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, the bottom of fixture stand and side also are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, clamp stone roller that the uniform wafer of infiltration forms with long forceps then and be put in the removable anchor clamps with the hands extrusion clamp, and the extruding unnecessary glue that comes out is shoveled with perching knife, detect squareness with square then and require 91 °, detect evenness with edge of a knife chi and clearance gauge and require, treat at last from anchor clamps, to take out after the normal temperature cooling less than 0.15mm.
Embodiment 2, wafer 20MHZ (wafer model HC-49U/S)
One, the configuration of bonding wafer glue: No. 85 ceresine 0.2kg, rosin 0.12kg, be put into after PUR 0.2kg mixes on the heating plate in the aluminum pot and heat, the power 1000W of heating plate, after ceresine, rosin, PUR are fully dissolved, stir, after stirring, glue is put into the pallet of 30cm * 50cm with 60 purpose metal filtration net filtrations;
Two, bonding wafer bake: wafer is put in the pallet in the roaster, and the temperature of roaster is 190 ℃, and stoving time is 45 minutes;
Three, the fixture stand of bonding wafer and the removable anchor clamps on the fixture stand are carried out preheating: 50 ℃ of preheat temperatures;
Four, the glue that configures is put on the A electric furnace heating plate heats: the bonded adhesives that configures is put on the A electric furnace heating plate 160 ℃ of the temperature of the epoxy glue after the fusing;
Five, the wafer that has heated in the above-mentioned technology stride two is put on the gummed iron plate of heating, gummed iron plate is gone up 160 ℃ of heating-up temperatures, the glue that has configured in the above-mentioned processing step one is placed on to carry out the surface of abundant solution pervasion to each wafer on the gummed iron plate then:
Six, rubbing the crystal pulling sheet with the hands with instrument makes wafer infiltration evenly: make the epoxy glue on the surface of wafer be distributed to the everywhere of wafer surface full and uniformly;
Seven, the bottom of the removable anchor clamps that preheating is good on B electric furnace heating plate and side are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, the bottom of fixture stand and side also are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, clamp stone roller that the uniform wafer of infiltration forms with long forceps then and be put in the removable anchor clamps with the hands extrusion clamp, and the extruding unnecessary glue that comes out is shoveled with perching knife, detect 89 ° of squarenesses with square then, detect evenness with edge of a knife chi and clearance gauge and require, treat at last from anchor clamps, to take out after the normal temperature cooling less than 0.10mm.
Claims (1)
1. the method that is used for bonding wafer is characterized in that this method comprises following processing step:
One, the configuration of bonding wafer glue: each weight ratio of forming is No. 85 ceresine: rosin: PUR=5: 3: 5; After mixing, be put in the aluminum pot on the A electric furnace heating plate and heat, the power 1000W of heating plate, ceresine, rosin, PUR are fully dissolved after, stir, after stirring, glue is put into the pallet of 30cm*50cm with 60 purpose metal filtration net filtrations;
Two, bonding wafer bake: wafer is put in the pallet in the roaster, and the temperature of roaster is 170 ℃-190 ℃, and stoving time is 35-45 minute;
Three, fixture stand on the B electric furnace heating plate and the removable anchor clamps on the fixture stand carry out preheating, 30 ℃-50 ℃ of preheat temperatures;
Four, the glue that configures is put on the A electric furnace heating plate heats: 140 ℃-160 ℃ of the temperature of the epoxy glue after the fusing;
Five, the wafer that has heated in the above-mentioned processing step two is put on the gummed iron plate of heating, gummed iron plate is gone up heating-up temperature 140-160 ℃, then the glue that has configured in the above-mentioned processing step one is placed on the gummed iron plate and fully dissolves, make glue penetration arrive the surface of each wafer:
Six, rub the crystal pulling sheet with the hands with common bamboo chopstick, make the wafer infiltration evenly, the epoxy glue of wafer surface is distributed to the everywhere of wafer surface full and uniformly;
Seven, the bottom of the removable anchor clamps that preheating is good on B electric furnace heating plate and side are coated with the 46# lubricating oil of last layer 0.32 Kilograms Per Square Meter equably, the bottom of fixture stand and side also are coated with last layer 46# lubricating oil 0.32 Kilograms Per Square Meter equably, clamp stone roller that the uniform wafer of infiltration forms with long forceps then and be put in the removable anchor clamps more with the hands extrusion clamp, and the extruding unnecessary glue that comes out is shoveled with perching knife, detect squareness with square then and require 90 ° ± 1 °, detect evenness with edge of a knife chi and clearance gauge and require, treat at last from anchor clamps, to take out after the normal temperature cooling less than 0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100303643A CN101510516B (en) | 2009-03-20 | 2009-03-20 | Method and apparatus for bonding wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100303643A CN101510516B (en) | 2009-03-20 | 2009-03-20 | Method and apparatus for bonding wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101510516A CN101510516A (en) | 2009-08-19 |
| CN101510516B true CN101510516B (en) | 2010-04-14 |
Family
ID=41002856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100303643A Active CN101510516B (en) | 2009-03-20 | 2009-03-20 | Method and apparatus for bonding wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101510516B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102936485B (en) * | 2011-08-16 | 2016-08-10 | 江苏泰尔新材料股份有限公司 | A kind of Wafer adhesive wax |
| CN104004494A (en) * | 2014-06-09 | 2014-08-27 | 成都泰美克晶体技术有限公司 | Quartz wafer and crystal lump adhesive for surface mounted device (SMD) and preparation technology thereof |
| CN104251652A (en) * | 2014-08-21 | 2014-12-31 | 沈阳罕王精密轴承有限公司 | Measuring method for microscopic height of thread of end seal of workpiece |
| CN107160574A (en) * | 2017-05-11 | 2017-09-15 | 济源石晶光电频率技术有限公司 | Crystalline substance stone roller adhering device and brilliant stone roller adhesive method |
| CN108068007A (en) * | 2017-12-06 | 2018-05-25 | 江苏师范大学 | A kind of otpical leaf device disc loading method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2742573Y (en) * | 2004-06-23 | 2005-11-23 | 新美化精机工厂股份有限公司 | Material feeding mechanism for wafer binding machine |
| CN1828859A (en) * | 2005-02-28 | 2006-09-06 | 大日本网目版制造株式会社 | Wafer treating apparatus |
| CN1949454A (en) * | 2005-10-13 | 2007-04-18 | 中国科学院半导体研究所 | Wafer bonding method of changing different thermal expansion coefficient material using temp. |
| CN201183291Y (en) * | 2008-01-16 | 2009-01-21 | 常州有则科技有限公司 | Silicon crystal bar sticking worktable |
-
2009
- 2009-03-20 CN CN2009100303643A patent/CN101510516B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2742573Y (en) * | 2004-06-23 | 2005-11-23 | 新美化精机工厂股份有限公司 | Material feeding mechanism for wafer binding machine |
| CN1828859A (en) * | 2005-02-28 | 2006-09-06 | 大日本网目版制造株式会社 | Wafer treating apparatus |
| CN1949454A (en) * | 2005-10-13 | 2007-04-18 | 中国科学院半导体研究所 | Wafer bonding method of changing different thermal expansion coefficient material using temp. |
| CN201183291Y (en) * | 2008-01-16 | 2009-01-21 | 常州有则科技有限公司 | Silicon crystal bar sticking worktable |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101510516A (en) | 2009-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101510516B (en) | Method and apparatus for bonding wafer | |
| EP2746411A3 (en) | Method for heat treatment of columnar work | |
| JP2015502901A5 (en) | ||
| NO20075282L (en) | Ribbed material with high strength and victory resistance | |
| CN104439981B (en) | Manufacturing method of TA6 titanium alloy large-width thin plate | |
| CN107552533B (en) | Disassembling device and disassembling method for touch screen and liquid crystal display screen | |
| TW201006934A (en) | Method for manufacturing stainless steel ultra thin white coil | |
| CN201527966U (en) | Apparatus for bonding wafer | |
| CN108866401A (en) | A kind of manufacturing method of the aluminium alloy strips of automobile decoration | |
| CN109435303A (en) | A kind of production method and its equipment of multilayer PVC floor | |
| CN105598217B (en) | The constant temperature and pressure aligning method of titanium alloy die forging part warpage | |
| CN214115471U (en) | Integrated brewing and cooking system for brewing green plum wine | |
| CN111943528B (en) | Production method and device of oversized hollow glass | |
| CN102615282A (en) | Processing method for manufacturing wide molybdenum sheet | |
| JP2016064426A5 (en) | ||
| CN108856615B (en) | Rolling forming method for large cake forging | |
| CN110306021A (en) | A kind of large thin-wall round member circular weld heating ageing treatment device and method | |
| CN106689975A (en) | Non-stick jacketed pan for food processing | |
| CN206351418U (en) | A kind of hot-pressing fixture | |
| CN103029289A (en) | Hot pressing process of transformer insulating gluing component | |
| CN109622772A (en) | Hot die exchange on a kind of titanium alloy thermoforming machine | |
| CN103319083A (en) | Method for raising intensity of glass panel on portable electronic device | |
| CN106737286B (en) | A kind of hot-pressing fixture and heat pressing process | |
| TW201038797A (en) | Method and system for rapidly splicing plates | |
| CN220758896U (en) | Temperature control stirring pot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |