CN101499455B - Power supply structure used for structural special application integrated circuit - Google Patents

Power supply structure used for structural special application integrated circuit Download PDF

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Publication number
CN101499455B
CN101499455B CN2008100054078A CN200810005407A CN101499455B CN 101499455 B CN101499455 B CN 101499455B CN 2008100054078 A CN2008100054078 A CN 2008100054078A CN 200810005407 A CN200810005407 A CN 200810005407A CN 101499455 B CN101499455 B CN 101499455B
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China
Prior art keywords
power supply
conductor
supply structure
metal level
circuit unit
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Expired - Fee Related
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CN2008100054078A
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Chinese (zh)
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CN101499455A (en
Inventor
吴长余
古明鑫
谢尚志
王心石
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Faraday Technology Corp
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Faraday Technology Corp
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Abstract

A power architecture is used in a structured special application integrated circuit. The power architecture includes a first conductor and a second conductor. The first conductor is coupled with a fixed voltage and at least passes through two edges of a circuit unit. The second conductor is connected with the first conductor by a contact window. The second conductor at most passes through one edge of the circuit unit. The structured special application integrated circuit includes a first metal layer and a second metal layer; the first metal layer comprises the first conductor and the second metal layer comprises the second conductor.

Description

Be applied to the power supply structure of structural formula application-specific IC
Technical field
The present invention relates to structural formula application-specific IC (structural application-specificintegrated circuit, abbreviate structural ASIC as), and be particularly related to a kind of power supply structure that is applied to the structural formula application-specific IC.
Background technology
General application-specific IC (ASIC) does not have fixed structure, and the mask (mask) of each aspect (layer) can both design arbitrarily, and the structural formula application-specific IC is then different.Fig. 1 illustrates the part-structure of a traditional structure formula application-specific IC 100.There is a metal oxide semiconductcor field effect transistor (metal oxide semiconductor field effect transistor Fig. 1 below, the abbreviation MOS transistor), the insulating barrier 102 that comprises P type substrate (substrate) 105, N type trap (N-well) 103,104 and grid (gate).The top has three metal level 121-123 to connect MOS transistor via contact hole (contact) 111.
The characteristic of structural formula application-specific IC is that some aspect is fixed and can not be changed, and other aspects can design voluntarily or change for the user.For example the structural formula application-specific IC 100, and the structure at all levels under its metal level 123 immobilizes, and metal level can freely design together with metal level 123 structure at all levels own more than 123.In the structural formula application-specific IC, the aspect that can freely design is called (programmable) able to programme, and immutable aspect is called non-programmable.
The user can be the basis with the part of non-programmable, designs the product of oneself, and is to save the mask of a part of cost, the especially bottom, the most complicated also the most expensive usually.Under the ideal state, user oneself adds several layer masks, just can obtain complete circuit.Structural formula application-specific IC 100 with Fig. 1 is an example, and orlop can be a MOS transistor, connects MOS transistor with metal level 121 and 122 then, built-up circuit unit (cell), and these circuit units are non-programmables.Then, the user can be combined into the function that oneself needs with the programmable metallization layer connecting circuit unit more than 123.Nowadays metal-programmable cell array on the market (metal programmable cell array is called for short MPCA) is exactly similar a kind of structural formula application-specific IC.
All circuit all need power line and earth connection, and in traditional structural formula application-specific IC, metal level able to programme or non-programmable all adopts the design as Fig. 2.Fig. 2 illustrates a typical circuit unit 201 and power line wherein 202 and earth connection 203.Power line 202 is shared by a plurality of circuit units with earth connection 203, so adopts penetration type design, leads up to many circuit units.Problem is the power line of penetration type and the area that earth connection takies many preciousnesses, especially in programmable aspect.In order to save the mask expense, the user wishes that naturally programmable aspect is few more good more.For reaching this purpose, must simplify the wiring (routing) of aspect able to programme, reducing the lead gross area is a kind of way.Under this required, the power line of penetration type and earth connection became the obstruction of simplified wiring.
Summary of the invention
The invention provides a kind of power supply structure that is applied to the structural formula application-specific IC,, simplify the wiring of circuit unit to reduce the area that power line and earth connection take.
The present invention proposes a kind of power supply structure, is applied to the structural formula application-specific IC.This power supply structure comprises first conductor and second conductor.First conductor is coupled to fixed voltage, passes through two edges of circuit unit at least.Second conductor and first conductor are connected to each other via contact hole.Second conductor passes through an edge of foregoing circuit unit at most.Said structure formula application-specific IC comprises the first metal layer and second metal level, and the first metal layer comprises first conductor, and second metal level comprises second conductor.
In one embodiment of this invention, above-mentioned fixed voltage can be supply voltage, reference voltage or earthed voltage.
In one embodiment of this invention, the second above-mentioned conductor only passes through an edge of circuit unit, and other edges of obstructed oversampling circuit unit.
In one embodiment of this invention, the second above-mentioned conductor is in circuit unit inside, any one edge of obstructed oversampling circuit unit.
In one embodiment of this invention, above-mentioned the first metal layer is the non-programmable metal level.And second metal level can be programmable metallization layer or non-programmable metal level.
Power line and earth connection that the present invention only keeps a metal level design for penetration type, change the power line of other metal levels and earth connection into non-penetration type design, therefore can reduce the area that power line and earth connection take, and then simplify the circuit unit wiring.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the structural representation of known a kind of structural formula application-specific IC.
Fig. 2 is the power line of known circuit unit and the schematic diagram of earth connection.
Fig. 3 is according to the power line of the power supply structure that is applied to the structural formula application-specific IC of one embodiment of the invention and the schematic diagram of earth connection.
Fig. 4 A is the wiring schematic diagram of known circuit unit.
Fig. 4 B is the wiring schematic diagram according to the circuit unit of one embodiment of the invention.
Description of reference numerals
100: structural formula application-specific IC 102: insulating barrier
103,104:N type trap 105:P type substrate
111: contact hole 121-123: metal level
201: circuit unit 202: power line
203: earth connection 301: circuit unit
310,320: metal level 311,321,322: power line
312,323,324: earth connection 401,421: circuit unit
402,403,422,423: lead 404,424,425: earth connection
Embodiment
About power line and earth connection, traditional design all has power line and earth connection to pass each circuit unit at each metal level just as shown in Figure 2, allows all circuit can both receive electric power.With the angle of total formula application-specific IC, do not need so many power lines and earth connection in fact.Non-programmable aspect under for example MOS transistor all can being produced on as long as a non-programmable aspect disposes power line and the earth connection that runs through all circuit units therein, just can allow all circuit receive electric power.Aspect able to programme as for the top, it is a bit of only need to allow power line and earth connection occur, even point, in order to cooperating the circuit design demand that the source electrode (source) or the drain electrode (drain) of some MOS transistor are connected power supply or ground connection, or allow the MOS transistor grid that do not use connect power supply or ground connection to avoid suspension joint (floating).That is to say that only need power line and earth connection that a metal level configuration runs through all circuit units, other aspects only need the power line of fragment and earth connection to get final product, and so can save many areas, simplified wiring.
Fig. 3 is that this power supply structure is applied to the structural formula application-specific IC according to the power line of the power supply structure of one embodiment of the invention and the schematic diagram of earth connection.Wherein, the 301st, a circuit unit of present embodiment, 310 and 320 is two different metal levels.Metal level 310 comprises power line 311 and earth connection 312.Metal level 320 comprises power line 321,322 and earth connection 323,324.Power line 311,321 and 322 is connected to each other via contact hole.Earth connection 312,323 and 324 also is connected to each other via contact hole.
The circuit unit of present embodiment has four edges, upper and lower, left and right.Metal level 310 adopts the penetration type design, that is to say, each bar power line wherein and earth connection pass through two edges of circuit unit 301 at least.Metal level 320 adopts non-penetration type design, or is called the section type design, that is to say, each bar power line wherein and earth connection pass through an edge of circuit unit 301 at most.Power line 321,322 and earth connection 324 any edge by circuit unit 301 only all wherein for example, and by other edges.Earth connection 323 is in circuit unit 301 inside, not by any edge.At metal level 320, the area of power line 321,322 and earth connection 323,324 can dwindle as far as possible, needs only the conductor minimum area more than or equal to process rule.
Scope of the present invention is not limited to above-mentioned power line or earth connection, and the present invention can be contained any conductor that is coupled to fixed voltage.If it is exactly power line that conductor is coupled to supply voltage, be exactly earth connection if be coupled to earthed voltage.In addition, above-mentioned conductor also can be coupled to other fixed voltages, for example reference voltage.
In the embodiments of figure 3, metal level 310 is non-programmable metallization layers, and metal level 320 can be programmable metallization layer or non-programmable metal level.Metal level 320 can be above or below metal level 310.Can there be other metal levels between the metal level 310 and 320, also can have other metal levels.
The design of employing section type can reduce the area that power line and earth connection take, and simplifies the wiring of circuit unit.The example that Fig. 4 A and Fig. 4 B come to this.In the traditional circuit unit 401 of Fig. 4 A, because the earth connection 404 of penetration type, lead 402 must change the curved lead 403 of walking around twice.On the other hand, if adopt the section type earth connection of present embodiment, traditional circuit unit 401 can be revised as the circuit unit 421 of present embodiment.Wherein, earth connection 404 becomes 424 and 425 two fragments.The area that is available can allow lead 403 toward moving down, and becomes lead 423, so lead 402 can be stretching, becomes lead 422.Total, the wiring of circuit unit 421 is simpler than circuit unit 401, and available space is also more.
In sum, fixed voltage lead of the present invention only adopts the penetration type design at a metal level, can adopt the section type design at other metal levels.Therefore can reduce the area that the fixed voltage lead takies.The area that is available can increase the cloth linear elasticity in order to simplified wiring, gives the more wiring space of user, even reduces the mask number of plies, reduces the research and development and the manufacturing cost of integrated circuit.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; the technical field technical staff without departing from the spirit and scope of the present invention under any; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.

Claims (14)

1. a power supply structure is applied to the structural formula application-specific IC, and this power supply structure comprises:
First conductor is coupled to fixed voltage, passes through two edges of circuit unit at least; And
Second conductor is connected to each other via a contact hole with this first conductor, passes through an edge of this circuit unit at most;
Wherein this structural formula application-specific IC comprises the first metal layer and second metal level, and this first metal layer comprises this first conductor, and this second metal level comprises this second conductor.
2. power supply structure as claimed in claim 1, wherein this fixed voltage is a supply voltage.
3. power supply structure as claimed in claim 1, wherein this fixed voltage is a reference voltage.
4. power supply structure as claimed in claim 1, wherein this fixed voltage is an earthed voltage.
5. power supply structure as claimed in claim 1, wherein this second conductor only passes through an edge of this circuit unit, and does not pass through other edges of this circuit unit.
6. power supply structure as claimed in claim 1, wherein this second conductor does not pass through arbitrary edge of this circuit unit in this circuit unit inside.
7. power supply structure as claimed in claim 1, wherein this second conductor meets the conductor minimum area of the process rule of this structural formula application-specific IC.
8. power supply structure as claimed in claim 1, wherein this first metal layer is the non-programmable metal level.
9. power supply structure as claimed in claim 1, wherein this second metal level is the programmable metallization layer.
10. power supply structure as claimed in claim 1, wherein this second metal level is the non-programmable metal level.
11. power supply structure as claimed in claim 1, wherein this first metal layer is positioned at this second metal level top.
12. power supply structure as claimed in claim 1, wherein this second metal level is positioned at this first metal layer top.
13. wherein there are not other metal levels in power supply structure as claimed in claim 1 between this first metal layer and this second metal level.
14. power supply structure as claimed in claim 1, wherein this structural formula application-specific IC also comprises the 3rd metal level, and the 3rd metal level is between this first metal layer and this second metal level.
CN2008100054078A 2008-02-02 2008-02-02 Power supply structure used for structural special application integrated circuit Expired - Fee Related CN101499455B (en)

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Application Number Priority Date Filing Date Title
CN2008100054078A CN101499455B (en) 2008-02-02 2008-02-02 Power supply structure used for structural special application integrated circuit

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Application Number Priority Date Filing Date Title
CN2008100054078A CN101499455B (en) 2008-02-02 2008-02-02 Power supply structure used for structural special application integrated circuit

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CN101499455A CN101499455A (en) 2009-08-05
CN101499455B true CN101499455B (en) 2010-11-17

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8533641B2 (en) * 2011-10-07 2013-09-10 Baysand Inc. Gate array architecture with multiple programmable regions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271548B1 (en) * 1996-05-24 2001-08-07 Kabushiki Kaisha Toshiba Master slice LSI and layout method for the same
CN1316615C (en) * 2001-10-17 2007-05-16 国际商业机器公司 Integrated circuit bus grid having wires with pre-selected variable widths

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271548B1 (en) * 1996-05-24 2001-08-07 Kabushiki Kaisha Toshiba Master slice LSI and layout method for the same
CN1316615C (en) * 2001-10-17 2007-05-16 国际商业机器公司 Integrated circuit bus grid having wires with pre-selected variable widths

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2007-158035A 2007.06.21

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