CN101494270A - Semiconductor light emitting device and manufacturing method therefor - Google Patents
Semiconductor light emitting device and manufacturing method therefor Download PDFInfo
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- CN101494270A CN101494270A CNA2009100027997A CN200910002799A CN101494270A CN 101494270 A CN101494270 A CN 101494270A CN A2009100027997 A CNA2009100027997 A CN A2009100027997A CN 200910002799 A CN200910002799 A CN 200910002799A CN 101494270 A CN101494270 A CN 101494270A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 claims abstract description 34
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 26
- 239000000956 alloy Substances 0.000 claims abstract description 26
- 239000011230 binding agent Substances 0.000 claims description 53
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 238000005245 sintering Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 149
- 239000012790 adhesive layer Substances 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 230000006978 adaptation Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- -1 platinum metals Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to a semiconductor light emitting device with Pd electrode and producing method thereof, aiming at providing a semiconductor light emitting device and producing method thereof, wherein the semiconductor light emitting device can avoid problem of electrode flake away by fixedly dovetail Pd electrode and a insulating film, and realize high-capacity and low working current of a laser device by improving characteristic of Pd electrode as low resistance ohmic electrode. The semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.
Description
Technical field
The present invention relates on p type contact layer, be formed with the semiconductor light-emitting elements and the manufacture method thereof of Pd electrode.
Background technology
In semiconductor light-emitting elements with ridge structure (ridge structure), by applying voltage to the p at the top that is formed on ridged portion type contact layer to active layer power (patent documentation 3).In order to carry out above-mentioned power supply, on p type contact layer, form electrode.As the kind electrode material, requirement can improve ohm property and can and contact layer between low resistanceization etc. (patent documentation 5).In addition, from the rate of finished products of semiconductor light-emitting elements and the viewpoint of reliability, preferred electrode materials can not peeled off in the operation way.Therefore,, not only require to possess the low resistance ohm property as electrode material, also requirement can with substrate (underlying layer) driving fit and do not peel off (patent documentation 2,4) securely.
Here, particularly in the employed nitride semiconductor luminescent element of bluish violet LD, known when for example using Ni as p type electrode material, existence can not improve the shortcoming of electrical characteristics such as ohm property.Therefore, particularly as the p type electrode material of nitride semiconductor luminescent elements such as GaN, use the situation of Pd more.Pd (or Pd class material) particularly with the relation of GaN in have characteristic (patent documentation 1) as the low resistance Ohmic electrode.
Using like this under the situation of Pd as p type electrode material, generally except the contact area of configuration Pd electrode and P contact layer, also disposing the contact area of Pd electrode and dielectric film.And, become the reason that the Pd electrode peels off etc. because the adaptation of Pd electrode and dielectric film is low, thus exist in Pd electrode and dielectric film in the middle of form the situation of close binder.Disclose a kind of semiconductor light-emitting apparatus in patent documentation 4, the degenerate semiconductor (degenerate semiconductor) of this semiconductor light-emitting apparatus use ITO (Indium-Tin-Oxides) etc. or platinum metals and oxide thereof etc. are as the material of above-mentioned close binder.
Patent documentation 1: Japanese Patent Application Publication 2005-340625 communique
Patent documentation 2: Japanese Patent Application Publication 2003-198065 communique
Patent documentation 3: Japanese Patent Application Publication 2007-27181 communique
Patent documentation 4: Japanese Patent Application Publication 2006-128622 communique
Patent documentation 5: Japanese Patent Application Publication 2006-237476 communique
But, in the close binder (adhesive layer) that patent documentation 4 is put down in writing, exist make Pd electrode and dielectric film driving fit power still a little less than, the problem that the Pd electrode partly peels off.And then, in the bluish violet LD that uses nitride-based semiconductor, require the more high powerization and the low operating currentization of laser.That is, require the Pd electrode ohm property to be improved with lower resistance.In patent documentation 4 disclosed structures, there is the problem that can not satisfy above-mentioned requirements.
Summary of the invention
The present invention finishes in order to address the above problem, its purpose is to provide a kind of semiconductor light-emitting elements and manufacture method thereof, this semiconductor light-emitting elements passes through driving fit Pd electrode and dielectric film more firmly, thereby can avoid the problem that electrode peels off, and improve, thereby the high powerization and the low operating currentization of realization laser aid by the characteristic that makes the Pd electrode as the low resistance Ohmic electrode.
Semiconductor light-emitting elements of the present invention possesses: semiconductor layer; Be formed on this semiconductor layer and be formed with the dielectric film of peristome; Be formed at the multilayer close binder on this dielectric film; With to contact with this semiconductor layer at this peristome, the Pd electrode that forms of the mode that contacts with this multilayer close binder also.
This multilayer close binder has the Au layer as the superiors, is formed with the alloy of the Pd of the Au of this Au layer and this Pd electrode on the interface of this Au layer and this Pd electrode.
The manufacture method of semiconductor light-emitting elements of the present invention possesses: the photoresist that forms photoresist on the contact layer of the ridge structure that forms with semiconductor layer forms operation; After this photoresist formed operation, the dielectric film that forms dielectric film on wafer surface formed operation; The multilayer close binder that forms the multilayer close binder on this dielectric film forms operation; That removes this photoresist after this multilayer close binder forms operation peels off (lift-off) operation; After this stripping process, integrally forming the Pd electrode forming process of Pd electrode on this contact layer and on this multilayer close binder; With form at this Pd electrode after carry out the heat treated sintering heat treatment step of sintering (sintering).
Form in the operation at this multilayer close binder, form Ti layer or Cr layer as the layer that contacts with dielectric film, form the superiors of Au layer, on the interface of this Au layer and this Pd electrode, form the alloy of the Pd of the Au of this Au layer and this Pd electrode by this sintering heat treatment as this multilayer close binder.
The effect of invention
According to the present invention, can prevent that electrode from peeling off and improve characteristic as the low resistance Ohmic electrode.
Description of drawings
Fig. 1 is the figure that the structure to semiconductor light-emitting elements of the present invention describes.
Fig. 2 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 3 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 4 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 5 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 6 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 7 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 8 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Fig. 9 is the figure that the manufacture method to semiconductor light-emitting elements of the present invention describes.
Figure 10 is the figure that the power supply under the situation that does not have the multilayer close binder is described.
Figure 11 is the figure that the power supply under the situation that does not have the multilayer close binder is described.
Figure 12 is the figure that power supply effect of the present invention is described.
Figure 13 is the figure that power supply effect of the present invention is described.
Figure 14 is the figure that the structure to the situation that does not have platform portion describes.
Figure 15 is the figure that the semiconductor light-emitting elements to Pd electrode and dielectric film part contacting structure describes.
Figure 16 is the figure that the semiconductor light-emitting elements to Pd electrode and dielectric film part contacting structure describes.
Figure 17 is the figure that the semiconductor light-emitting elements to Pd electrode and dielectric film part contacting structure describes.
Figure 18 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 19 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 20 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 21 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 22 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 23 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 24 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 25 is the figure that the manufacture method to semiconductor light-emitting elements shown in Figure 15 describes.
Figure 26 is the figure that the variation to the multilayer close binder describes.
Figure 27 is the figure that the variation to the multilayer close binder describes.
The explanation of Reference numeral
10 ridged portions
12 grooves
14 portions
20 second dielectric films
22 Ti layers
23 Au layers
25 multilayer close binders
27 p type semiconductor layer
29 alloy parts
31 Pd electrodes
88 p type contact layers
Embodiment
Execution mode 1
Present embodiment relates to a kind of semiconductor light-emitting elements and manufacture method thereof, and this semiconductor light-emitting elements possesses can prevent to peel off the electrode that also can improve as the characteristic of low resistance Ohmic electrode.Fig. 1 is the sectional view of the semiconductor light-emitting elements of present embodiment.The semiconductor light-emitting elements of present embodiment possesses active layer 28, and layer is provided with p type semiconductor layer 27 thereon.P type semiconductor layer 27 comprises p type guide layer, p type coating layer and p type contact layer 88.Have, in the present embodiment, p type semiconductor layer 27 grades are to form with the material that comprises GaN again.
Here, p type contact layer 88 is the layers that are electrically connected with Pd electrode 31 described later in the p type semiconductor layer 27.As shown in Figure 1, p type contact layer 88 is formed in the ridged portion 10.Here, so-called ridged portion 10 is meant the protrusion that (above-mentioned p type semiconductor layer 27 etc.) are provided with as current confinement structure (current refinement structure) bandedly on the stepped construction that constitutes resonator structure.
And then, with ridged portion 10 be groove 12 about 10 μ m in abutting connection with ground configuration width.Groove 12 be compare with ridged portion 10, zone that the height of p type semiconductor layer 27 is formed lowlyer.And then, dispose platform portion 14 in abutting connection with ground in the side opposite of groove 12 with ridged portion 10.Platform portion 14 be compare with groove 12, zone that the height of p type semiconductor layer 27 is formed higherly.Because p type semiconductor layer 27 forms higherly in ridged portion 10 and platform portion 14 places than groove 12, so groove 12 forms ditch portion between platform portion 14 and groove 12.
And then, in the semiconductor light-emitting elements of present embodiment, possess first dielectric film 16 in the mode that contacts with the p N-type semiconductor N of above-mentioned groove 12.In the present embodiment, first dielectric film 16 is SiO
2, but be not limited thereto, also can be SiN, SiON, TEOS (TetraethylOrthosilicate, tetraethoxysilane), ZrO
2, TiO
2, Ta
2O
5, Al
2O
3, Nb
2O
5, Hf
2O
5, AlN etc.
Disposing second dielectric film 20 on first dielectric film 16 that is formed on the groove 12 and on the p type semiconductor layer 27 of platform portion 14.Second dielectric film 20 of present embodiment is SiO
2, but be not limited thereto, also can be SiN, SiON, TEOS, ZrO
2, TiO
2, Ta
2O
5, Al
2O
3, Nb
2O
5, Hf
2O
5, AlN etc.
On the second above-mentioned dielectric film 20 being formed with Ti layer 22 with the overlapping mode of second dielectric film 20, and then, on Ti layer 22 to be formed with Au layer 23 with the overlapping mode of Ti layer 22.In the present embodiment, the thickness of Ti layer 22 is 30nm, and the thickness of Au layer 23 is 40nm.Ti layer 22 and Au layer 23 form for the adaptation that improves second dielectric film 20 and Pd electrode 31 described later.Ti layer 22 and Au layer 23 are generically and collectively referred to as multilayer close binder 25.As shown in Figure 1, multilayer close binder 25 is formed in groove 12 and the platform portion 14.
And then, to form Pd electrode 31 on their upper strata with the overlapping mode of p type contact layer 88 and Au layer 23.Pd electrode 31 is in order to power to p type semiconductor layer 27 and to dispose.The Pd electrode 31 of present embodiment to be contacting with p type contact layer 88 in ridged portion 10, and integrally forms with the mode that Au layer 23 contacts at groove 12.Have, Pd electrode 31 is not formed on the whole groove 12 at groove 12 again, but is formed at the position from about the intermediate location of ridged portion 10 to ridged portion 10 and platform portion 14.And, on the interface of Pd electrode 31 and Au layer 23, be formed with the alloy of Pd and Au.This alloy is represented as alloy part 29 in Fig. 1.
The semiconductor light-emitting elements of present embodiment possesses above-mentioned structure.Below, with reference to Fig. 2～Fig. 8, the manufacture method of semiconductor light-emitting elements shown in Figure 1 is described.
At first, to possessing: active layer 28 and at the wafer of the p type semiconductor layer 27 of the most surperficial p of comprising type contact layer 88, after carrying out composition, carry out etching, form groove 12, ridged portion 10, platform portion 14.Be formed with p type contact layer 88 on p type semiconductor layer 27 in ridged portion 10 the most surperficial.Then, on the wafer that is formed with groove 12 grades, form first dielectric film 16.As shown in Figure 2, first dielectric film film forming on groove 12.In the present embodiment, first dielectric film 16 is SiO
2Have again, in Fig. 3～Fig. 8, omit the record of active layer.
Then, on wafer, apply photoresist.Then, as shown in Figure 3, with photoresist 18 remain in that mode in the shape portion 10 is exposed, development etc.
Then, film forming second dielectric film 20 on wafer shown in Figure 3.The wafer cross-section figure that forms behind second dielectric film 20 is Fig. 4.Second dielectric film 20 is formed on the photoresist 18 in ridged portion 10, is formed on first dielectric film 16 at groove 12, is formed on the p type semiconductor layer 27 in platform portion 14.In the present embodiment, second dielectric film 20 is SiO
2
Then, peel off, remove photoresist 18 and the multilayer close binder 25 that is formed on the photoresist 18.Wafer cross-section after Fig. 6 represents to peel off.When peeling off, p type contact layer 88 exposes in ridged portion 10.
Then, utilize photoetching (photo lithography) method on the part of platform portion 14 and groove 12, to form photoresist 24.Fig. 7 represents to be formed with the wafer of photoresist 24.Photoresist 24 is formed on the sidewall of platform portion 14 1 sides of platform portion 14 and groove 12.
Then, on the surface of wafer shown in Figure 7, form Pd.Fig. 8 represents to be formed with the sectional view of the wafer of Pd 26.Pd 26 is formed by evaporation.Pd 26 will become the electrode of semiconductor element.Here, Pd 26 contacts with p type contact layer 88 in ridged portion 10, contacts with the multilayer close binder and contacts with photoresist 24 in platform portion 14 sides in ridged portion 10 sides in groove 12.In addition, the Pd electrode contacts with photoresist 24 in platform portion.
Then, above-mentioned structure shown in Figure 8 is carried out lift-off processing, remove photoresist 24 and on Pd.Fig. 9 represents wafer cross-section at this moment.When separating photoresist 24 grades, only having the Pd electrode 31 that will become electrode among the Pd 26 to remain on the wafer by above-mentioned.Pd electrode 31 contacts with p type contact layer 88 in ridged portion 10, contacts with the sidewall of ridged portion side and the multilayer close binder 25 of ditch portion (part that highly is formed lowlyer) at groove 12.
Then, wafer shown in Figure 9 is carried out sintering heat treatment.Sintering heat treatment is carried out under the temperature about 400 ℃～550 ℃.Fig. 1 represents the structure after the sintering heat treatment.By sintering heat treatment, in ridged portion 10, Pd electrode 31 rises with the adaptation of p type contact layer 88, forms the alloy part 29 of Au and Pd at groove.
The invention is characterized on the interface of Pd electrode 31 and Au layer 23 and be formed with alloy part 29.Below, the effect that alloy part 29 is set is described.Because the requirement of high powerization, low current lossization etc. requires to use the low resistance Ohmic electrode as the p N-type semiconductor N electrodes in contact with laser aid.For example, when use comprises the made bluish violet color laser device of GaN, preferably use Pd as above-mentioned low resistance Ohmic electrode.But, owing to reasons such as technological abilities, be difficult to form the Pd electrode in the mode that only contacts with the p N-type semiconductor N, therefore, also there is situation about contacting with dielectric film in the Pd electrode.In the case, because the adaptation of Pd electrode and dielectric film is insufficient, cause the problem that the Pd electrode peels off so exist.This Pd electrode peels off after forming the Pd electrode and whenever all may take place, but particularly takes place easily after sintering heat treatment.
According to the semiconductor light-emitting elements and the manufacture method thereof of present embodiment, that can suppress above-mentioned Pd electrode peels off and forms the low resistance Ohmic electrode, can realize high powerization, low current lossization.That is, as shown in Figure 1, in the semiconductor light-emitting elements of present embodiment, because on the interface of Pd electrode 31 and Au layer 23, be formed with alloy part 29, so both driving fits securely.Further, because the layer that contacts with second dielectric film 20 in the multilayer close binder 25 forms Ti layer 22, so the adaptation of the Ti layer and second dielectric film is also good.
Like this, need not append special operation in order on the interface of Pd electrode 31 and Au layer 23, to form alloy part 29.That is, in sintering heat treatment of the present invention, improve the adaptation of Pd electrode 31 and p type contact layer 88, and on the interface of Pd electrode 31 and Au layer 23, form alloy.Therefore, need not increase operation in order to form alloy part 29.
In addition, after above-mentioned sintering heat treatment, on wafer surface, form the situation of pad electrode (pad electrode) in addition.In the case, power to the p type semiconductor layer via pad electrode.Here, for example as shown in figure 10, can expect on the surface of the Pd electrode that the mode with the ridged portion 158 that covers p type semiconductor layer 150 forms, being formed with electrode surface oxide layer 156.This electrode surface oxide layer 156 is for example carried out the heat treated situation of sintering etc. and is generated down in oxygen atmosphere.Electrode surface oxide layer 156 is positioned at the centre of Pd electrode 154 and pad electrode, can become the main cause that resistance increases.The thickness of the arrow of Figure 10 and Figure 11 is schematically represented to be reduced by electrode surface oxide layer 156 and situation about supplying with to p type semiconductor layer 150 from the electric current that pad electrode is supplied with.
But according to the structure of present embodiment, as shown in figure 12, the electric current of supplying with from pad electrode can be via electrode surface oxide layer 156, and arrives p type semiconductor layer 150 via multilayer close binder 25, alloy part 29.Thus, the pad electrode directly over ridged portion 10 via electrode surface oxide layer 156 on the electric current that Pd electrode 31 is supplied with, add the electric current that is not powered, therefore can improve power supply effect to semiconductor light-emitting elements via electrode surface oxide layer 156.Figure 13 is with arrow represent as present embodiment also can to obtain to power from the ridged portion both sides flow direction of the electric current under the situation of effect.
Above-mentioned " from the power supply effect of ridged portion both sides " is also not only effective to the structure that does not have close binder as shown in Figure 10.Promptly, so long as the structure of present embodiment, with be situation about forming for example with dielectric in the part of multilayer close binder, or the structure that does not have the alloy part on the interface of Pd electrode and multilayer close binder compares, and can realize the low resistanceization of semiconductor light-emitting elements.
Have again,, can obtain too from the power supply effect of ridged portion both sides even almost do not forming on the Pd electrode under the situation of surface electrode oxide layer 156.Therefore,,, also can realize the low resistanceization of semiconductor light-emitting elements, therefore, can realize high powerization, the low current lossization of semiconductor light-emitting elements even do not forming on the Pd electrode under the situation of surface electrode oxide layer according to the structure of present embodiment.
In addition, in semiconductor light-emitting elements, even the position beyond end face also has the situation that becomes high temperature at work.When element is warming up to uniform temperature when above, can expect that the characteristic of element can deterioration and reliability variation.But according to the structure of present embodiment, the multilayer close binder forms with metal, and thermal diffusivity is good, therefore can suppress above-mentioned problems such as deterioration.
The semiconductor light-emitting elements of present embodiment adopts the structure that possesses platform portion, but the present invention is not limited thereto.That is,, on the interface of Pd electrode 50 and multilayer close binder 52, possess alloy part 54, just can access effect of the present invention as long as possess ridged portion 51 and non-ridged portion 53 as shown in Figure 14, so platform portion inscape not necessarily.Reference numeral 55 expression dielectric films in Figure 14 are arranged again.
In the semiconductor light-emitting elements of present embodiment, the multilayer close binder forms in the mode that covers groove, but the present invention is not limited to this.For example, also can select structure as shown in Figure 15, Pd electrode 186 contacts with first dielectric film 16 on the part of groove 12, contacts with Au layer 184 and possess alloy part 188 on its interface at Pd electrode 186 on the other parts of groove 12.
In the case, though exist in the inadequate situation of adaptation on the contact portion of the Pd electrode 186 and first dielectric film 16, this Pd electrode 186 is 188 places and the driving fit securely of Au layer in the bonding part.Therefore, can obtain effect of the present invention.And then, can expect causing the adaptation of Pd electrode and Au layer insufficient owing to form the narrow zone that the position of alloy part is limited at groove as shown in Figure 15.In this case, also can enlarge the zone that becomes the alloy part, improve the adaptation of Pd electrode and Au layer, prevent to peel off as the alloy part 190 among Figure 16, the alloy part 192 among Figure 17.
But the semiconductor light-emitting elements that possesses the structure shown in Figure 15 (or Figure 16,17) is compared with semiconductor light-emitting elements shown in Figure 1, its easier manufacturing.For the semiconductor light-emitting elements of shop drawings 1, need only on the top of ridged portion, to form photoresist as shown in Figure 3.But, because the reason on the ability of manufacturing installation is difficult to like this only form photoresist in the mode that does not have deviation between goods on the top of ridged portion sometimes.Therefore, also can replace the photoresist 18 among Fig. 3, for example the photoresist 38 that photoresist shape is formed among Figure 19 is such.Make with photoresist manufacturing process under 38 the situation such as Figure 18～shown in Figure 25.As described below, its summary is described.
At first, in Figure 18, on the wafer that is formed with ridged portion 30, groove 32, platform portion 34, form first dielectric film.Then, as mentioned above, form photoresist (Figure 19) in the mode that covers ridged portion 30.Then, the order with second dielectric film 40, Ti layer 41, Au layer 42 forms each layer (Figure 20,21).Then, remove above-mentioned photoresist and each layer on upper strata (Figure 22) thereof by peeling off.Then, in the part of groove 32 and platform portion 34, form photoresist 44 (Figure 23).Then, form Pd electrode 46, carry out peel off (Figure 24,25) of photoresist 44 grades.The wafer that possesses structure shown in Figure 25 is implemented sintering heat treatment, obtain structure shown in Figure 15.
Though the multilayer close binder in the present embodiment adopts the structure that forms Au on the Ti layer, the present invention is not limited thereto.That is, also can be such as shown in figure 26, the multilayer close binder 100 that is formed between dielectric film 101 and the Pd electrode 102 adopts the structure that possesses Ti layer, Ta layer, Au layer from dielectric film 101 1 sides.
Possess under the situation of the structure that is formed with the Au layer on the Ti layer as the multilayer close binder, exist Ti to be diffused into alloy part and partly become the situation of oxide at alloy.Above-mentioned oxide is because exist the problem of the resistance that increases semiconductor light-emitting elements, so improper with regard to the low resistanceization of semiconductor light-emitting elements.Therefore, like that at the intermediate configurations Ta layer of Ti layer and Au layer, can suppress Ti course Au layer (alloy part) diffusion by as shown in figure 26.Thus, by possessing the such structure of multilayer driving fit part 100, can further realize the low resistanceization of semiconductor light-emitting elements.
Equally, also can between dielectric film 101 and Pd electrode 104, adopt the structure that possesses multilayer close binder 106 as shown in Figure 27, wherein, this multilayer close binder 106 is formed with Ti layer or Cr layer, Ta layer or Mo layer, Ti layer or Cr layer, Au layer successively from dielectric film 101 1 sides.When possessing this structure,, can make each layer driving fit securely that constitutes the multilayer close binder because possess Ti layer/Cr layer in Ta layer/Mo layer (Ta layer or Mo layer) and the centre of dielectric film 101 and the centre of Ta layer/Mo layer and Au layer.
In addition, get final product because constitute the required suitable decisions such as adaptation of thickness consideration of the layer of multilayer close binder, so the thickness of present embodiment is not defined.
In addition, the Pd electrode both can be the Pd individual layer, also can be with Pd as the ground floor that contacts with p type contact layer, and be laminated with the sandwich construction of other material thereon.For example replace the Pd individual layer, be formed on the double-layer structure of the Pd/Ta that is laminated with Ta on the Pd, perhaps both can further stacked thereon Pd and form the three-decker of Pd/Ta/Pd, also can further stacked other material form sandwich construction thereon.Under the situation of the double-layer structure that forms Pd/Ta, confirmed and to have reduced contact resistance than Pd individual layer from result of experiment.Particularly, in structure shown in Figure 1, under the situation of the double-layer structure that Pd electrode 31 is changed to Pd/Ta from the Pd individual layer, contact resistivity 1 figure place to 2 figure place that descended.And, under the situation of the three-decker of the Pd/Ta/Pd that further on it, is laminated with Pd, can prevent the oxidation on Ta surface.
Semiconductor light-emitting elements and manufacture method thereof about present embodiment can be expected various distortion.Promptly, in the present invention, by forming the multilayer close binder that is made of metal level between Pd electrode and dielectric film, and multilayer close binder and Pd electrode possess the alloy part on its interface, the adaptation of Pd electrode can be improved, and electrical characteristic can be improved like that as mentioned above.Therefore, only otherwise surmount scope of the present invention, can expect various distortion, for example semiconductor layer is not limited to GaN etc., can implement with the material type of wider scope.
Claims (9)
1. semiconductor light-emitting elements is characterized in that possessing:
Semiconductor layer;
Be formed on the described semiconductor layer and be formed with the dielectric film of peristome;
Be formed at the multilayer close binder on the described dielectric film; And
To contact with described semiconductor layer at described peristome, the Pd electrode that forms of the mode that contacts with described multilayer close binder also, wherein,
Described multilayer close binder has the Au layer as the superiors,
On the interface of described Au layer and described Pd electrode, be formed with the alloy of the Pd of the Au of described Au layer and described Pd electrode.
2. semiconductor light-emitting elements as claimed in claim 1 is characterized in that,
Forming Ti layer or Cr layer is the layer that contacts with described dielectric film of described multilayer close binder.
3. semiconductor light-emitting elements as claimed in claim 2 is characterized in that,
Described multilayer close binder described Au layer, and described Ti layer or described Cr layer between possess the Ta layer.
4. semiconductor light-emitting elements as claimed in claim 1 is characterized in that,
Described multilayer close binder is from lower floor to be the order formation of Ti layer or Cr layer, Ta layer or Mo layer, Ti layer or Cr layer, described Au layer.
5. semiconductor light-emitting elements as claimed in claim 1 is characterized in that,
Described semiconductor layer possesses ridge structure,
Described peristome is configured on the described ridge structure,
The described semiconductor layer that contacts with described Pd electrode at described peristome is a p type contact layer.
6. semiconductor light-emitting elements as claimed in claim 1 is characterized in that,
Described semiconductor layer possesses:
Ridge structure;
With described ridge structure adjacency and than the low groove of described ridge structure height; And
With described groove adjacency and the platform portion higher than described groove height,
Described multilayer close binder is disposed at described portion and described groove.
7. as each described semiconductor light-emitting elements in the claim 1～6, it is characterized in that,
Described Pd electrode has stepped construction, and this stepped construction is included in the double-layer structure that is laminated with Ta on the Pd, or is laminated with Ta on Pd, further is laminated with the three-decker of Pd on it.
8. the manufacture method of a semiconductor light-emitting elements is characterized in that, possesses:
The photoresist that forms photoresist on the contact layer of the ridge structure that forms with semiconductor layer forms operation;
The dielectric film that forms dielectric film on the wafer surface after described photoresist forms operation forms operation;
The multilayer close binder that forms the multilayer close binder on described dielectric film forms operation;
After forming operation, removes described multilayer close binder the stripping process of described photoresist;
After described stripping process, integrally forming the Pd electrode forming process of Pd electrode on the described contact layer and on the described multilayer close binder; And
After forming, described Pd electrode carries out the heat treated sintering heat treatment step of sintering, wherein,
Form in the operation at described multilayer close binder, form Ti layer or Cr layer as the layer that contacts with dielectric film,
Form the superiors of Au layer as described multilayer close binder,
On the interface of described Au layer and described Pd electrode, form the alloy of the Pd of the Au of described Au layer and described Pd electrode by described sintering heat treatment.
9. the manufacture method of semiconductor light-emitting elements as claimed in claim 8 is characterized in that,
Described Pd electrode has stepped construction, and this stepped construction is included in the double-layer structure that is laminated with Ta on the Pd, or is laminated with Ta on Pd, further is laminated with the three-decker of Pd on it.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008013131 | 2008-01-23 | ||
| JP2008013131A JP2009176900A (en) | 2008-01-23 | 2008-01-23 | Semiconductor light-emitting element and method of manufacturing the same |
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| Publication Number | Publication Date |
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| CN101494270A true CN101494270A (en) | 2009-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100027997A Pending CN101494270A (en) | 2008-01-23 | 2009-01-22 | Semiconductor light emitting device and manufacturing method therefor |
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| Country | Link |
|---|---|
| US (1) | US20090184336A1 (en) |
| JP (1) | JP2009176900A (en) |
| KR (1) | KR20090081326A (en) |
| CN (1) | CN101494270A (en) |
| TW (1) | TW200939588A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035137A (en) * | 2009-09-30 | 2011-04-27 | 索尼公司 | Semiconductor laser |
| CN104218447A (en) * | 2013-05-31 | 2014-12-17 | 山东华光光电子有限公司 | Semiconductor laser chip ohmic contact electrode and fabrication method and application thereof |
| CN108365070A (en) * | 2017-01-26 | 2018-08-03 | 晶元光电股份有限公司 | Light-emitting component |
| CN110518066A (en) * | 2019-08-13 | 2019-11-29 | 深圳市矽赫科技有限公司 | A kind of semiconductor ohmic contact structure |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009129943A (en) * | 2007-11-20 | 2009-06-11 | Mitsubishi Electric Corp | Nitride semiconductor device and method of manufacturing the same |
| JP2011165869A (en) * | 2010-02-09 | 2011-08-25 | Mitsubishi Electric Corp | Semiconductor light-emitting element and method for manufacturing the same |
| CN104319621B (en) * | 2014-10-29 | 2017-05-10 | 山东华光光电子股份有限公司 | Ohmic contact metal electrode of chip of semiconductor laser and manufacturing method of ohmic contact metal electrode |
| JP2017139319A (en) * | 2016-02-03 | 2017-08-10 | 浜松ホトニクス株式会社 | Semiconductor laser element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI327781B (en) * | 2003-02-19 | 2010-07-21 | Nichia Corp | Nitride semiconductor device |
| JP4956928B2 (en) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | Semiconductor device |
-
2008
- 2008-01-23 JP JP2008013131A patent/JP2009176900A/en active Pending
- 2008-07-10 US US12/170,503 patent/US20090184336A1/en not_active Abandoned
- 2008-12-02 TW TW097146736A patent/TW200939588A/en unknown
-
2009
- 2009-01-19 KR KR1020090004031A patent/KR20090081326A/en not_active Application Discontinuation
- 2009-01-22 CN CNA2009100027997A patent/CN101494270A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035137A (en) * | 2009-09-30 | 2011-04-27 | 索尼公司 | Semiconductor laser |
| CN102035137B (en) * | 2009-09-30 | 2013-01-09 | 索尼公司 | Semiconductor laser |
| CN104218447A (en) * | 2013-05-31 | 2014-12-17 | 山东华光光电子有限公司 | Semiconductor laser chip ohmic contact electrode and fabrication method and application thereof |
| CN104218447B (en) * | 2013-05-31 | 2018-03-13 | 山东华光光电子股份有限公司 | A kind of semiconductor laser chip Ohm contact electrode and preparation method and application |
| CN108365070A (en) * | 2017-01-26 | 2018-08-03 | 晶元光电股份有限公司 | Light-emitting component |
| CN108365070B (en) * | 2017-01-26 | 2022-01-25 | 晶元光电股份有限公司 | Light emitting element |
| CN110518066A (en) * | 2019-08-13 | 2019-11-29 | 深圳市矽赫科技有限公司 | A kind of semiconductor ohmic contact structure |
| CN110518066B (en) * | 2019-08-13 | 2022-08-02 | 深圳市矽赫科技有限公司 | Semiconductor ohmic contact structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200939588A (en) | 2009-09-16 |
| JP2009176900A (en) | 2009-08-06 |
| US20090184336A1 (en) | 2009-07-23 |
| KR20090081326A (en) | 2009-07-28 |
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