CN101483309A - Dual wavelength laser using saturable absorber as frequency selection and Q switched element, application thereof - Google Patents
Dual wavelength laser using saturable absorber as frequency selection and Q switched element, application thereof Download PDFInfo
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- CN101483309A CN101483309A CNA2009100138947A CN200910013894A CN101483309A CN 101483309 A CN101483309 A CN 101483309A CN A2009100138947 A CNA2009100138947 A CN A2009100138947A CN 200910013894 A CN200910013894 A CN 200910013894A CN 101483309 A CN101483309 A CN 101483309A
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Abstract
The present invention relates to a dual-wavelength laser that takes saturable absorber as frequency-select and Q-switching element and application thereof, wherein the dual-wavelength laser comprises a flash lamp or a laser diode pumping source. Insert a saturable absorber that can strongly absorb laser of 1.05 micrometer or 1.08 micrometer into a laser resonant cavity that can appropriately restrain laser of 1.06 micrometer while taking laser material as gain medium. Frequency is selected according to the features of strong absorption to laser of 1.05 micrometer or 1.08 micrometer and relatively weak absorption to laser of 1.06 micrometer by the saturable absorber Cr:YAG or semi-conductor, and combination with a laser device of end-face pumping or side pumping is used to generate dual wavelength pulsed laser and terahertz is realized by utilizing difference frequency of the laser. The laser is provided with compact structure, simple operation, adequate quality of beam of light, high conversion efficiency and low cost, and is convenient for industrialized mass production.
Description
Technical field
The present invention relates to a kind ofly, belong to laser technology field with the dual laser and the application of saturable absorber as frequency-selecting and Q switched element.
Background technology
Terahertz emission be meant wavelength from 30 microns to 3000 microns, the electromagnetic wave of frequency from 0.1THz to 10THz.Because this light has characteristics such as long wavelength and low photon energy, has showed tempting prospect in scientific research and technology application facet.The terahertz emission that carries out the difference frequency generation by two bundle near-infrared lasers has the characteristics of high-peak power, becomes the focus of people's concern in recent years.But this method not only needs huge and complicated optical system to produce dual-wavelength laser, and needs some optical elements that this two-beam is merged, and this has brought very big inconvenience for the generation and the application of THz wave.As can be seen, the dual-wavelength laser that wavelength is close is the optimal method of this difficulty of customer service from difference frequency.2007, people such as Creeden utilize wavelength to realize terahertz emission (Opt.Express for the dual-wavelength optical-fiber laser of 1064.2nm and 1059nm from difference frequency, 15,6478-6483 (2007)), but up to the present, owing to lack suitable Dual Wavelength Crystal Lasers, also do not utilize the report from difference frequency realization terahertz emission of crystal laser.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provide a kind of with the dual laser and the application of saturable absorber as frequency-selecting and Q switched element.
Terminological interpretation:
Nd:YAG is the abbreviation of neodymium-doped yttrium-aluminum garnet; Nd:YAP is the abbreviation of neodymium-doped yttrium aluminate; Nd:GGG is the abbreviation of Nd-Gd-Ga garnet; Nd:CNGG is the abbreviation of neodymium-doped calcium-niobium-gallium garnet; Nd:CLNGG is the abbreviation of the calcium-niobium-gallium garnet of neodymium-doped and lithium; Nd:RVO
4(R=Gd, Lu, Y and La) is the abbreviation of neodymium-doped vanadate crystal; Cr
4+: YAG is an abbreviation of mixing tetravalence chromium yag crystal.By this area convention, use above-mentioned abbreviation in the present specification.
Detailed Description Of The Invention
One, dual laser
Dual laser of the present invention, comprise photoflash lamp or laser diode (LD) pumping source, inserting in the laserresonator that suitably suppresses 1.06 microns laser 1.05 microns or the 1.08 microns strong saturable absorbers that absorb, is gain media with the laser material; Wherein, described laser material is one of following:
(1) Nd:YAG, Nd:YAP, Nd:GGG, Nd:CNGG, Nd:CLNGG, Nd:RVO
4(R=Gd, Lu, Y or La) crystal, the crystal twin polishing, plated film or plating be not with to pump light and all antireflecting deielectric-coating of dual wavelength;
(2) Nd:YAG, Nd:YAP, Nd:GGG, Nd:CNGG, Nd:CLNGG, Nd:RVO
4(R=Gd, Lu, Y or La) pottery, ceramic twin polishing, plated film or plating be not with to pump light and all antireflecting deielectric-coating of dual wavelength;
Described saturable absorber is Cr:YAG crystal or semiconductor, and twin polishing and plating are with to all antireflecting deielectric-coating of dual wavelength.
Saturable absorber Cr:YAG crystal or semiconductor are that medium and small emission absorbs greatly for 1.05 microns or 1.08 microns to laser material, and big emission is absorbed little saturable absorption materials for 1.06 microns.
The above-mentioned dual laser that produces terahertz emission, preferred, with LD as pumping source, with the Nd:YAG crystal as gain material, with the Cr:YAG crystal as saturable absorber.
Laser material Nd:YAG, Nd:YAP, Nd:GGG, Nd:CNGG, Nd:CLNGG and Nd:RVO that the present invention selects for use
4(R=Gd, Lu, Y and La) crystal or pottery, because the Nd ion is in the crystal field, Stark splitting can take place in its emission spectrum.Spectrum analysis shows, Nd:YAG, Nd:GGG, Nd:CNGG, Nd:CLNGG, Nd:RVO4 (R=Gd, Lu, Y or La) crystal or pottery have more emission peak near infrared band, selects suitable emission peak to realize dual-wavelength laser output, can realize that Terahertz launches by its difference frequency.
Above-described crystal is processed, polished, perhaps plated film more all adopts state of the art to get final product.
Dual laser of the present invention, the realization of dual-wavelength laser is based on the laser to laser diode (LD) or photoflash lamp end face or profile pump.Its concrete principle is as follows:
Can in the laserresonator that suitably suppresses 1.06 microns laser (loss is 70-90%), realize 1.05 or 1.08 microns single wavelength continuous laser outputs.Insert saturable absorber in the resonant cavity, utilize saturable absorber, 1.05 or 1.08 microns laser are suitably suppressed 1.05 or 1.08 microns strong absorptions.The saturable absorption performance of saturable absorber makes when laser pulse begins, the gain of its laser material is very big, this moment since the Nd ion 1.06 microns when emission big fluorescence score value ratio, laser material in the gain meeting of this wave band greater than loss, so just can in pulse laser, realize simultaneously 1.05 or 1.08 microns with 1.06 micron wave lengths in emission.Because the emission cross section difference of two kinds of wavelength, and resonant cavity is also different to its loss, can realize the ratio of dual wavelength power density is regulated by regulating pump power.
Two, the application of dual laser
The application of dual laser of the present invention utilizes the difference frequency of the laser double-wavelength pulse laser that output wavelength is close simultaneously to obtain terahertz emission.Concrete grammar is as follows:
Utilize on focusing system places the double-wavelength pulse laser radiation outside resonant cavity the suitable nonlinear material, produce terahertz emission by difference frequency outside the chamber; Perhaps nonlinear material is directly put into laserresonator, produce terahertz emission by difference frequency in the chamber.Described suitable nonlinear material is a techniques well known, for example periodic polarized lithium niobate, suitable tangential GaAs or gallium phosphide etc.
Technical characterstic several two effects of the present invention are:
1, dual laser of the present invention with saturable absorber as frequency-selecting and Q switched element, with Nd doping laser material as gain media, 1.06 microns laser are suitably being suppressed (loss 70-90%), to the close double-wavelength pulse laser of while output wavelength in the resonant cavity of the high reflection of another wavelength (1.05 or 1.08 microns) (R=70-80%).
2, realize the Terahertz emission by the difference frequency of dual-wavelength laser.
3, to have a compact conformation, simple to operate, good beam quality, conversion efficiency height, cost low for dual laser of the present invention, is convenient to advantages such as industrial mass manufacturing.
Description of drawings
Fig. 1 is the schematic diagram of dual laser of the present invention, wherein, the 1st, coupled fiber, the 2nd, focusing system, LD is a laser diode pumping source, M1 for plating with incident mirror to 1.06 and 1.05 microns total reflections, M2 be to 1.06 microns see through 77%, to 1.05 microns through 30% outgoing mirror, Nd:YAG is a laser crystal, and Cr:YAG is a saturable absorber.The arrow indication is the direction of beam propagation among the figure.
Fig. 2 is the relative size of the embodiment of the invention 1 dual laser output wavelength when different pump power, and abscissa is wavelength (nm), and ordinate is relative intensity (arbitrary unit).Wherein Fig. 2 (a) is incident pump power (P
In) laser spectroscopy during less than 4.55W, Fig. 2 (b) is the laser spectroscopy of incident pump power when being 4.55W, Fig. 2 (c) is incident pump power laser spectroscopy when being 8.56W, Fig. 2 (d) is the laser spectroscopy of incident pump power when being 17.25W, export the Wavelength of Laser composition as can be seen from Figure and gradually change with the pump power increase, 1.06 microns composition increases gradually.Maximum average output power is 3.75W, and peak power is 3.79kW.
Fig. 3 is the relative size of the embodiment of the invention 2 dual lasers output wavelength when different pump power, and abscissa is wavelength (nm), and ordinate is relative intensity (arbitrary unit).Wherein, Fig. 3 (a)-(d) for initial transmission be 91% Cr:YAG during as saturable absorber respectively at incident pump power (P
In) laser spectroscopy when 2.63W, 3.79W, 13W, 17W.Fig. 3 (e)-(h) for initial transmission be 77% Cr:YAG during as saturable absorber respectively at incident pump power (P
In) laser spectroscopy when 4.55W, 7.02W, 13W, 17W.
Embodiment
The present invention will be further described below in conjunction with embodiment, but be not limited thereto.
A kind of laser that produces dual wavelength, with LD as pumping source, with the Nd:YAG crystal as gain material, encapsulate the laser (as shown in Figure 1) that forms as the element of saturable absorber with Cr:YAG, by focusing system pump light is focused on the laser crystal Nd:YAG; M1 is for plating with the incident mirror to 1.06 and 1.05 microns total reflections; Nd concentration is 1.1at% among the Nd:YAG, is of a size of 3mm * 3mm * 6mm, puts into the copper billet of water-cooled; Cr:YAG sees through 97% saturable absorber to 1.06 microns; M2 sees through 77%, sees through 30% outgoing mirror to 1.05 microns 1.06 microns; Whole resonant cavity is long to be 2.5cm.Output wavelength gradually changes with the increase of pump power, and 1.06 microns composition increases gradually, as shown in Figure 2.Maximum average output power is 3.75W, and peak power is 3.79kW.
A kind of laser that produces dual wavelength, with LD as pumping source, with the Nd:YAG pottery as gain material, encapsulate the laser (structure as shown in Figure 1) that forms as the element of saturable absorber with Cr:YAG, by focusing system pump light is focused on the laser ceramics Nd:YAG; M1 is for plating with the incident mirror to 1.06 and 1.05 microns total reflections; Nd concentration is 2at% among the Nd:YAG, is of a size of 3mm * 3mm * 4.96mm, puts into the copper billet of water-cooled; Cr:YAG is through two saturable absorbers that are respectively 91% and 77% to 1.06 microns; M2 sees through 85.6%, sees through 21% outgoing mirror to 1.05 microns 1.06 microns; Whole resonant cavity is long to be 2.5cm.
When to select initial transmission for use be 91% Cr:YAG, shown in Fig. 3 (a)-(d): when pump power is lower than 3.79W, output wavelength is 1.05 microns, when pump power is higher than 3.79W, wavelength is that 1.06 microns composition occurs, and output wavelength gradually changes with the increase of pump power, and 1.06 microns composition increases gradually.Maximum average output power is 2.82W.
When selecting for use initial transmission to be 77% saturable absorber, shown in Fig. 3 (f)-(h): when pump power is lower than 7.02W, output wavelength is 1.06 microns, when pump power is higher than 7.02W, wavelength is that 1.05 microns composition occurs, and output wavelength gradually changes with the increase of pump power, and 1.05 microns composition increases gradually.Maximum average output power is 1.81W, and peak power is 21.5kW.
Claims (4)
1. dual laser, comprise photoflash lamp or laser diode (LD) pumping source, it is characterized in that inserting in the laserresonator that suitably suppresses 1.06 microns laser to 1.05 microns or the 1.08 microns strong saturable absorbers that absorb, is gain media with the laser material; Wherein, described laser material is one of following:
(1) Nd:YAG, Nd:YAP, Nd:GGG, Nd:CNGG, Nd:CLNGG, Nd:RVO
4(R=Gd, Lu, Y or La) crystal, the crystal twin polishing, plated film or plating be not with to pump light and all antireflecting deielectric-coating of dual wavelength;
(2) Nd:YAG, Nd:YAP, Nd:GGG, Nd:CNGG, Nd:CLNGG, Nd:RVO
4(R=Gd, Lu, Y or La) pottery, ceramic twin polishing, plated film or plating be not with to pump light and all antireflecting deielectric-coating of dual wavelength;
Described saturable absorber is Cr:YAG crystal or semiconductor, and twin polishing and plating are with to all antireflecting deielectric-coating of dual wavelength.
2. dual laser as claimed in claim 1 is characterized in that with LD as pumping source, with the Nd:YAG crystal as gain material, with the Cr:YAG crystal as saturable absorber.
3. the application of the described dual laser of claim 1 utilizes the difference frequency of the laser double-wavelength pulse laser that output wavelength is close simultaneously to obtain terahertz emission.
4. the application of dual laser as claimed in claim 3 is characterized in that concrete grammar is as follows:
Utilize on focusing system places the double-wavelength pulse laser radiation outside resonant cavity the suitable nonlinear material, produce terahertz emission by difference frequency outside the chamber; Perhaps nonlinear material is directly put into laserresonator, produce terahertz emission by difference frequency in the chamber.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101847820A (en) * | 2010-05-21 | 2010-09-29 | 山东大学 | Solid laser free from being plated with coupling output dielectric film |
| CN102130420A (en) * | 2011-01-27 | 2011-07-20 | 山东大学 | Dual-wavelength (1106nm and 1110nm) laser device |
| CN102142653A (en) * | 2011-01-13 | 2011-08-03 | 山东大学 | Nd:YGG crystal 1111nm laser and application thereof in carbon monoxide poisoning detection |
| CN102185247A (en) * | 2011-04-08 | 2011-09-14 | 山东大学 | 537 nm and 556 nm double-wavelength laser device |
| CN102545014A (en) * | 2010-12-13 | 2012-07-04 | 青岛大学 | Method for double-pulse laser with wavelengths of 1.0mu m and 1.3mu m |
| CN103457145A (en) * | 2013-08-22 | 2013-12-18 | 中国电子科技集团公司第十一研究所 | Laser device |
| CN103928831A (en) * | 2014-04-18 | 2014-07-16 | 中国科学院上海光学精密机械研究所 | Dot matrix output solid laser based on Dammann grating |
| CN110655386A (en) * | 2019-10-29 | 2020-01-07 | 中国工程物理研究院化工材料研究所 | Ytterbium sodium calcium lithium niobium garnet doped transparent ceramic, preparation method and application |
| CN112615245A (en) * | 2020-12-17 | 2021-04-06 | 山东科技大学 | Intermediate infrared pulse solid laser based on graphite alkyne saturable absorption and working method |
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2009
- 2009-01-21 CN CN2009100138947A patent/CN101483309B/en active Active
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101847820A (en) * | 2010-05-21 | 2010-09-29 | 山东大学 | Solid laser free from being plated with coupling output dielectric film |
| CN102545014A (en) * | 2010-12-13 | 2012-07-04 | 青岛大学 | Method for double-pulse laser with wavelengths of 1.0mu m and 1.3mu m |
| CN102142653A (en) * | 2011-01-13 | 2011-08-03 | 山东大学 | Nd:YGG crystal 1111nm laser and application thereof in carbon monoxide poisoning detection |
| CN102142653B (en) * | 2011-01-13 | 2012-07-11 | 山东大学 | Nd:YGG crystal 1111nm laser and application thereof in carbon monoxide poisoning detection |
| CN102130420A (en) * | 2011-01-27 | 2011-07-20 | 山东大学 | Dual-wavelength (1106nm and 1110nm) laser device |
| CN102185247A (en) * | 2011-04-08 | 2011-09-14 | 山东大学 | 537 nm and 556 nm double-wavelength laser device |
| CN102185247B (en) * | 2011-04-08 | 2012-04-25 | 山东大学 | 537 nm and 556 nm double-wavelength laser device |
| CN103457145A (en) * | 2013-08-22 | 2013-12-18 | 中国电子科技集团公司第十一研究所 | Laser device |
| CN103928831A (en) * | 2014-04-18 | 2014-07-16 | 中国科学院上海光学精密机械研究所 | Dot matrix output solid laser based on Dammann grating |
| CN103928831B (en) * | 2014-04-18 | 2017-02-15 | 中国科学院上海光学精密机械研究所 | Dot matrix output solid laser based on Dammann grating |
| CN110655386A (en) * | 2019-10-29 | 2020-01-07 | 中国工程物理研究院化工材料研究所 | Ytterbium sodium calcium lithium niobium garnet doped transparent ceramic, preparation method and application |
| CN112615245A (en) * | 2020-12-17 | 2021-04-06 | 山东科技大学 | Intermediate infrared pulse solid laser based on graphite alkyne saturable absorption and working method |
| CN112615245B (en) * | 2020-12-17 | 2022-06-24 | 山东科技大学 | Intermediate infrared pulse solid laser based on graphite alkyne saturable absorption and working method |
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