CN112615245A - Intermediate infrared pulse solid laser based on graphite alkyne saturable absorption and working method - Google Patents

Intermediate infrared pulse solid laser based on graphite alkyne saturable absorption and working method Download PDF

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CN112615245A
CN112615245A CN202011489827.5A CN202011489827A CN112615245A CN 112615245 A CN112615245 A CN 112615245A CN 202011489827 A CN202011489827 A CN 202011489827A CN 112615245 A CN112615245 A CN 112615245A
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laser
graphite alkyne
light
resonant cavity
saturable
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刘善德
陈波
张宁
张科
姚勇平
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Shandong University of Science and Technology
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    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
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    • H01S3/042—Arrangements for thermal management for solid state lasers
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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    • H01S3/0602—Crystal lasers or glass lasers
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1638—YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)

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Abstract

The invention relates to the technical field of laser, and discloses a graphite alkyne saturable absorption-based intermediate infrared pulse solid laser and a working method thereof3+YAP crystal and laser Q modulator as graphite alkyne saturable absorber.The pumping light emitted by the semiconductor laser diode pumping source is focused to the laser gain medium Er through the light focusing coupling system3+A YAP crystal is characterized in that coupling output mirrors with different transmittances are utilized to respectively build a straight laser resonant cavity, and the output characteristics of continuous laser are researched under different transmittances. Compared with the traditional process of converting laser with a wave band of 1 mu m into a mid-infrared wave band through optical parametric oscillation, the semiconductor laser directly pumping the mid-infrared pulse laser has the advantages of miniaturization, high efficiency, low cost and the like.

Description

Intermediate infrared pulse solid laser based on graphite alkyne saturable absorption and working method
Technical Field
The invention relates to the field of laser technology and nonlinear optics, in particular to a graphite alkyne saturable absorption-based intermediate infrared pulse solid laser and a working method thereof.
Background
The 3-micron-band ultrafast laser is positioned in a typical atmosphere transparent window, is a well-known molecular fingerprint spectrum region, and plays an irreplaceable role in aspects of national defense safety, environmental monitoring, biomedicine, mid-infrared optical frequency combing, supercontinuum, high-photon energy high-order harmonic generation and the like. Since 2011, the Nature Photonics journal recommends a medium-infrared laser research direction for many times, and the special journal 'Mid-infrared Photonics' which is released in 7 months in 12 years is regarded as a new research opportunity in the laser technical field by taking the medium-infrared laser with the diameter of 2-20 mu m. At present, two methods are mainly used for obtaining the 3 mu m wave band pulse laser, one is to convert the 1 mu m wave band pulse laser into the 3 mu m wave band through nonlinear frequency conversion, and the other is based on Cr-doped2+、Fe2+A Kerr lens mode locking method of a crystal. In 2009-2013, Sorikin et al, university of Vienna, Austria, realized mode locking of 2.5 μm band Kerr lenses of Cr: ZnSe and Cr: ZnS lasers, with mode locking pulse widths up to the magnitude of-100 fs. However, doped with Cr2+、Fe2+High-quality crystals are difficult to grow and cannot be directly pumped by a mature semiconductor laser diode pumping source LD, and Kerr lens mode locking has strict design requirements on a resonant cavity, which limits the development of 3-micron-band ultrafast lasers. Therefore, from the perspective of laser applications, especially in military applications, it is desirable to have compact devices with high output power, and it is desirable to pump Er-doped materials directly by LD3+Gain medium for generating ultrafast laser with 3 μm waveband by mode locking with saturable absorberThereby reducing intermediate links and improving the stability and efficiency of laser output.
Er-doped for realizing LD direct pumping of 3 mu m wave band3+Pulsed laser, which must be doped with Er3+Gain medium and 3 μm wave band saturated absorption material. At present, Er is doped3+The gain medium has been developed far less than Nd doped because of the lifetime, fluorescence quenching and thermal problems of the material itself3+、Yb3+、Tm3+And (5) maturing the gain medium. But compared with the laser gain medium, the 3 μm waveband saturated absorption material is a main factor for limiting the generation of the waveband pulse laser. In 2012, university of australia sydney j.f.li et al utilized SESAM as a saturable absorber at Ho3+、Pr3+2.87 μm mode-locked laser output has been achieved in doped ZBLAN fibers with pulse widths up to 24 ps. However, the SESAM requires molecular beam epitaxial growth, the preparation process is complex, and the lattice constant mismatch of the SESAM material used for the intermediate infrared band can generate more dislocation and defects, which result in low damage threshold and large unsaturated loss, and is not mature at present. In recent years, low-dimensional materials represented by graphene, such as transition metal sulfides, black phosphorus and the like, have physicochemical properties different from those of bulk materials, and exhibit functions which are difficult to be possessed by common bulk materials, so that the low-dimensional materials become research hotspots in the field of current optoelectronic devices. The typical characteristic of the material is that the band gap can be properly adjusted by the layer number or defect state of the material, and the broadband optical response is achieved.
Graphdiyne is a novel two-dimensional all-carbon nanomaterial developed after fullerene (0D, 1985), carbon nanotube (1D, 1991), and graphene (2D, 2004). The nano-silicon dioxide nano-film has a plane layer with atomic thickness, and is widely applied to various fields of electrochemical catalysis, photoelectrochemical water splitting, photocatalysis, photoelectric detectors, super capacitors, lithium ion batteries, solar batteries and the like due to unique chemical structures and electronic properties. However, the use of graphdiynes as two-dimensional allotropes of novel carbons in the field of photonics is still in its infancy. First, unlike the zero band gap of graphene, grapyne has a tunable direct band gap, has strong interaction between light and a substance, and a large light absorption rate, which indicates that grapyne is a promising candidate material in photonic devices based on optical switching functions. In addition, the abundant acetylenic bonds and sub-nanopores in the structure of graphyne provide a large number of sites for its functionalization. In this case, by controlling the type and number of doping atoms (e.g., boron, nitrogen, phosphorus, and sulfur), the band gap of the graphdine can be appropriately adjusted so that the graphdine has a functional material with a broadband light response. In the aspect of mechanical properties, the graphdine has higher mechanical modulus and rigidity, and meets various requirements for constructing composite materials. Moreover, the preparation of the graphdiyne is completely controllable, and the graphdiyne can be synthesized below 100 ℃ and can even be generated in the solution of various substrates. In addition, compared with unstable two-dimensional materials such as black phosphorus and the like, the graphdiyne has good optical stability and chemical stability and very long service life at room temperature. The excellent stability of the graphdine can prevent the graphdine from being oxidized and degraded under the strong light irradiation, which is of great significance for developing a photonic device which can be used for a long time. Therefore, the research and development of the graphite alkyne-based mid-infrared band laser device not only has important significance for comprehensively understanding the optical performance of the mid-infrared band of the graphite alkyne nano material, but also provides technical reference for the design of a 3 mu m band mid-infrared pulse laser.
Disclosure of Invention
Based on the background, aiming at the technical problems of complex structure and low stability of the current intermediate infrared pulse laser, the invention provides the intermediate infrared pulse all-solid-state laser based on the saturable absorption of the two-dimensional material graphite alkyne and the working method, which are simple to realize and compact in structure, and provides technical support for the design of the practical, efficient and compact 3-micron waveband intermediate infrared pulse laser.
Description of terms:
Er3+YAP: the erbium-doped yttrium aluminate crystal is abbreviated as Er3+:YAlO3；
YAG: abbreviation of Yttrium Aluminum Garnet (YAG) with molecular formula of Y3Al5O12；
AR: the transmittance is increased, and the light transmittance to a certain wavelength is not lower than 99.8%;
AR @972 nm: is a general abbreviation of an anti-reflection film with a 972nm wave band;
HT: the light transmittance is high, and the light transmittance to a certain wavelength is not lower than 99.5%;
HR: the light reflection rate to certain wavelength is not less than 99.8%.
In order to achieve the above object 1, the technical solution of the present invention is as follows:
the intermediate infrared pulse solid laser based on the graphite alkyne saturable absorption comprises a semiconductor laser diode pumping source, a coupling optical fiber, a light focusing coupling system, a laser gain medium, a laser resonant cavity and a laser Q modulation device; the semiconductor laser diode pumping source, the light focusing coupling system and the laser resonant cavity are sequentially arranged, and the semiconductor laser diode pumping source is connected to the light focusing coupling system through a coupling optical fiber; the laser resonant cavity comprises an input mirror and a coupling output mirror, the input mirror and the coupling output mirror are respectively arranged at two ends of a laser gain medium, a laser Q modulation device is inserted into the laser resonant cavity and is tightly attached between the laser gain medium and the coupling output mirror, and the laser gain medium and the laser Q modulation device are sequentially arranged in the laser resonant cavity according to the direction of a light path.
Preferably, the laser gain medium is Er3+YAP crystals.
Preferably, the laser Q modulation device is a graphite alkyne saturable absorber and is synthesized by liquid-liquid interfacial polymerization. Synthesizing a graphite alkyne film by a liquid-liquid interface method, dispersing the synthesized graphite alkyne film in ethanol, transferring the graphite alkyne and ethanol solution to a quartz plate by a rotary coating, and drying to obtain the graphite alkyne saturable absorber.
Preferably, the semiconductor laser diode pump source has an output power of 0-30W, a numerical aperture of 0.22, a fiber core diameter of 400 μm, and a center wavelength of 972 nm.
Preferably, the focal length of the light focusing coupling system is 80mm, the focusing ratio is 1:2, and the output laser is shaped and focused on the laser gain medium.
Preferably, Er3+YAP crystal with doping concentration of trivalent erbium ion of 10 at.%, crystal size of 2 x 5mm3。
Preferably, Er3+YAP crystal is provided with an indium foil paper wrapping layer and placed in a copper circulating water cooling clamp.
Preferably, Er3+YAP crystals are laser-grade polished.
Preferably, the laser resonator is a straight resonator with a cavity length of 14 mm.
Preferably, the laser resonant cavity comprises an input mirror and a coupling output mirror, wherein the input mirror is a concave mirror, the curvature radius is 100mm, the input surface is coated with AR @972nm, and the laser cavity surface is coated with HR @2.8-3.0 μm; the coupling output mirror in the laser resonant cavity is a plane mirror.
In order to achieve the aim 2, the invention adopts the following technical scheme:
the working method of the intermediate infrared pulse solid laser based on the saturable absorption of the graphite alkyne film comprises the following steps:
the pump light emitted by the semiconductor laser diode pump source is transmitted to the light focusing coupling system through the coupling optical fiber, and the light focusing coupling system focuses the pump light to the laser gain medium Er3+YAP crystal, respectively building straight laser resonant cavities by using coupling output mirrors with different transmittances, and studying output characteristics of continuous laser, Er3+YAP crystal is cooled by circulating water at 13 ℃ in the whole process;
based on the continuous laser output resonant cavity, inserting a graphite alkyne saturable absorber into the laser resonant cavity, clinging to the front of a coupling output mirror, and adjusting the position and the angle of the graphite alkyne saturable absorber; because of the three-order saturable absorption characteristic of the graphyne, the absorption intensity of the graphyne to light is related to the light intensity in the cavity, when the pumping power is lower, the fluorescence in the cavity is weaker, and the saturable absorber of the graphyne can strongly absorb weak light, so that the Q value of the laser resonant cavity is very low, and the laser cannot oscillate; and when the pump light is continuously increased, the number of reversed particles in the laser resonant cavity is continuously accumulated, the fluorescence in the cavity is gradually increased, and when the saturated light intensity of the graphite alkyne saturable absorber is increased, the absorption intensity of the graphite alkyne saturable absorber on light is obviously reduced, the Q value is rapidly increased, laser oscillation is formed, and the stable output of the intermediate infrared pulse laser is realized.
The invention has the following beneficial technical effects:
(1) compared with the traditional technical scheme of obtaining the mid-infrared pulse laser with the wave band of 3 mu m by optical parametric oscillation, the invention adopts the semiconductor laser diode pumping source to directly pump the Er-doped laser3+The method of using YAP crystal and graphite alkyne as effective optical switch has the advantages of compact structure, high stability, high efficiency, low maintenance cost, etc.
(2) The output center wavelength of a semiconductor laser diode pumping source is 972nm, and the output center wavelength of the semiconductor laser diode pumping source and a gain medium Er3+The absorption center wavelength of the YAP crystal satisfies the gain bandwidth matching to increase the energy conversion efficiency of the laser.
(3) The invention adopts the graphite alkyne as the light modulation switch, and has the excellent saturable absorption characteristics of the intermediate infrared band, such as simple preparation process, large modulation depth and the like.
(4) Er in the invention3+YAP crystal is polished by laser level to obtain laser crystal of plane type ultra-smooth nondestructive layer; the experimental crystal is provided with an indium foil paper wrapping layer and is placed in a copper circulating water-cooling clamp, so that the influence of heat generated in the experiment on the crystal can be effectively weakened.
Drawings
FIG. 1 is a schematic diagram of a mid-infrared pulse laser structure based on graphite alkyne saturable absorption;
wherein, 1 is a semiconductor laser diode pumping source, 2 is a coupling optical fiber, 3 is a light focusing coupling system, 4 is an input mirror, and 5 is a laser gain medium (Er)3+YAP crystal, 6 is a graphite alkyne saturable absorber, 7 is a coupling output mirror, and the arrow direction in the figure is the light path direction;
FIG. 2 is a schematic diagram of a graphdine saturable absorber structure;
wherein 8 is a graphite alkyne and ethanol solution, and 9 is a quartz substrate;
FIG. 3 is a graph of a single pulse and pulse sequence under a coupling output mirror with transmittances of 2% and 10% respectively when mid-IR pulse laser output is realized; wherein (a) is a single pulse graph and (b) is a pulse sequence graph.
Detailed Description
The technical scheme of the invention is explained in detail by combining the examples and the attached drawings of the specification:
a graphite alkyne saturable absorption-based intermediate infrared pulse solid laser is shown in figure 1 and comprises a semiconductor diode pumping source 1, a coupling optical fiber 2, a light focusing coupling system 3 and an Er3+YAP crystal 5, laser resonant cavity and graphite alkyne saturable absorber 6. The semiconductor diode pumping source 1, the light focusing coupling system 3 and the laser resonant cavity are sequentially arranged; the laser resonant cavity comprises an input mirror 4 and a coupling output mirror 7, wherein the input mirror 4 and the coupling output mirror 7 are respectively arranged in Er3+Two ends of YAP crystal 5, a graphite alkyne saturable absorber 6 of a laser Q modulation device is inserted into the laser resonant cavity and clings to Er3+Between the YAP crystal and the coupling-out mirror.
The semiconductor diode pumping source 1 generates pumping light emitted to the light focusing coupling system 3, the pumping light passes through the light focusing coupling system 3, is emitted to the input mirror 4, and is focused on Er through the input mirror 43+ YAP crystal 5 center, from Er3+The YAP crystal 5 is emitted, then penetrates through the graphite alkyne saturable absorber 6, and then is emitted to the coupling output mirror 7, and finally the coupling output mirror 7 outputs pulse laser.
Specifically, the optical device position arrangement direction is the optical path direction.
Specifically, the semiconductor diode pump source 1 has an output center wavelength of 972nm, an output power of 0-30W, a numerical aperture of 0.22 and a fiber core diameter of 400 μm.
Specifically, the focal length of the light focusing coupling system 3 is 80mm, and the focusing ratio is 1: 2.
Specifically, the input mirror 4 is a concave mirror with the curvature radius of 100mm, the input surface of the concave mirror is coated with AR @972nm, the laser cavity surface is coated with HR @2.8-3.0 microns, and the coupling output mirror 7 is a plane mirror.
In particular, Er3+YAP crystal 5 with doping concentration of trivalent erbium ion of 10 at%, and crystal size of 2 x 5mm3。
In particular, Er3+YAP crystal 5 is wrapped by indium foil paper after laser-level polishing, and then placed in a copper circulating water cooling clamp, and circulating water cooling at 13 ℃ is adopted in the whole process.
Specifically, the graphite alkyne saturable absorber 6 is synthesized by liquid-liquid interfacial polymerization, a graphite alkyne film is synthesized by a liquid-liquid interfacial method, the synthesized graphite alkyne film is dispersed in ethanol, then the graphite alkyne and ethanol solution are transferred onto a quartz plate through a spin coating, and then the graphite alkyne saturable absorber 6 is obtained by drying.
Specifically, the laser resonant cavity is a straight resonant cavity, and the cavity length is 14 mm.
Further, the working method of the intermediate infrared pulse solid laser based on the graphite alkyne saturable absorption comprises the following steps:
firstly, under the condition of selecting coupling output mirrors 7 with different transmittances (T is 2%, 10%), pump light generated by a semiconductor laser diode pump source 1 is transmitted to a light focusing coupling system 3 through a coupling optical fiber 2, and the light focusing coupling system 3 focuses the pump light to a laser gain medium Er3+A YAP crystal 5 is provided with a laser resonance concave straight cavity, the angle of an input mirror is adjusted, and the maximum continuous laser output power under different transmittances is explored.
Secondly, under the condition of continuous laser optimal output, inserting the graphdine saturable absorber 6 into the resonant cavity to cling to the laser gain medium Er3+YAP crystal 5, and adjusting the position and angle. Because the absorption of the graphite alkyne saturable absorber material to laser in the cavity can change along with the change of the intensity of the optical field, the absorption to light is strong when the light intensity is weak, and the absorption to light is correspondingly weakened when the light intensity is strong. When the laser starts to work, the pumping power is low, the optical field is weak, and due to the loss caused by inserting the graphdine, the Q value of the quality factor in the laser resonant cavity is adjusted to be low, so that the intermediate infrared pulse laser cannot be output; the pumping power is continuously increased, the number density of the reversed particles in the cavity is continuously increased, when the saturated light intensity is reached, the absorption of the graphite alkyne on the intermediate infrared laser is quickly weakened, the loss in the cavity is reduced, the Q value is quickly increased, and when the light intensity exceeds a specific value, the absorption is saturated, so that the output of the high-stability intermediate infrared pulse laser is realized.
The experiment was performed with the transmittance T of the coupling-out mirror 7 being 2% and 10%, and the results were as follows:
when the coupling output mirror 7 with the transmittance of 2% and 10% is selected, the curve of the single pulse and the pulse sequence is shown in fig. 3. According to experiments, when the transmittance T is 2%, the shortest pulse width is 170.36ns and the highest repetition frequency is 339.42 kHz; when the transmittance T is 10%, the shortest pulse width is 266ns and the highest repetition frequency is 255.89 kHz. As can be seen, the laser outputs flat and stable mid-infrared pulse laser.
The above is a complete implementation process of the present embodiment.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art can make variations, modifications, additions or substitutions within the spirit and scope of the present invention, so long as the technical solutions substantially the same in terms of achieving the objects of the present invention fall within the protection scope of the present invention.

Claims (9)

1. The intermediate infrared pulse solid laser based on the graphite alkyne saturable absorption is characterized by comprising a semiconductor laser diode pumping source, a coupling optical fiber, a light focusing coupling system, a laser gain medium, a laser resonant cavity and a laser Q modulation device;
the semiconductor laser diode pumping source, the light focusing coupling system and the laser resonant cavity are sequentially arranged, and the semiconductor laser diode pumping source is connected to the light focusing coupling system through a coupling optical fiber; the laser resonant cavity comprises an input mirror and a coupling output mirror, the input mirror and the coupling output mirror are respectively arranged at two ends of a laser gain medium, a laser Q modulation device is inserted into the laser resonant cavity and is tightly attached between the laser gain medium and the coupling output mirror, and the laser gain medium and the laser Q modulation device are sequentially arranged in the laser resonant cavity according to the direction of a light path;
the laser gain medium is Er3+YAP crystals;
the laser Q modulation device is a graphite alkyne saturable absorber.
2. The mid-infrared pulse solid laser based on graphite alkyne saturable absorption of claim 1, wherein the graphite alkyne saturable absorber is synthesized by liquid-liquid interfacial polymerization, a graphite alkyne film is synthesized by a liquid-liquid interfacial method, the synthesized graphite alkyne film is dispersed in ethanol, then the graphite alkyne and ethanol solution are transferred onto a quartz plate through a spin coating, and then the graphite alkyne saturable absorber is obtained by drying.
3. The mid-infrared pulse solid-state laser based on graphdine saturable absorption according to claim 1, wherein the output power of the semiconductor laser diode pump source is 0-30W, the numerical aperture is 0.22, the core diameter of the optical fiber is 400 μm, and the center wavelength is 972 nm.
4. The mid-infrared pulse solid-state laser based on graphite alkyne saturable absorption as claimed in claim 1, wherein the focal length of the light focusing coupling system is 80mm, the focusing ratio is 1:2, and the light focusing coupling system is used for shaping and focusing the pump light on the laser gain medium.
5. The mid-infrared pulsed solid-state laser based on graphdine saturable absorption according to claim 1, wherein said Er3+YAP crystal with doping concentration of trivalent erbium ion of 10 at.%, crystal size of 2 x 5mm3。
6. A mid-ir pulsed solid-state laser based on graphdine saturable absorption as claimed in claim 1, wherein said Er3+YAP crystal is provided with an indium foil paper wrapping layer and placed in a copper circulating water cooling clamp.
7. The mid-infrared pulsed solid-state laser based on graphdine saturable absorption according to claim 1, wherein the laser resonator is a straight resonator having a cavity length of 14 mm.
8. The mid-infrared pulse solid-state laser based on the saturable absorption of graphdiyne as claimed in claim 1, wherein the input mirror in the laser resonator is a concave mirror with a radius of curvature of 100mm, the input surface is AR @972nm, and the laser cavity surface is HR @2.8-3.0 μm; and the coupling output mirror in the laser resonant cavity is a plane mirror.
9. The working method of the intermediate infrared pulse solid-state laser based on the saturated absorption of the graphyne is characterized in that the intermediate infrared pulse solid-state laser based on the saturated absorption of the graphyne as described in any one of the claims 1 to 8 is adopted, and the steps are as follows:
the pump light emitted by the semiconductor laser diode pump source is transmitted to the light focusing coupling system through the coupling optical fiber, and the light focusing coupling system focuses the pump light to the laser gain medium Er3+YAP crystal, respectively building straight laser resonant cavities by using coupling output mirrors with different transmittances, and studying output characteristics of continuous laser, Er3+YAP crystal is cooled by circulating water at 13 ℃ in the whole process;
based on the continuous laser output resonant cavity, inserting a graphite alkyne saturable absorber into the laser resonant cavity, clinging to the front of a coupling output mirror, and adjusting the position and the angle of the graphite alkyne saturable absorber; because of the three-order saturable absorption characteristic of the graphyne, the absorption intensity of the graphyne to light is related to the light intensity in the cavity, when the pumping power is lower, the fluorescence in the cavity is weaker, and the saturable absorber of the graphyne can strongly absorb weak light, so that the Q value of the laser resonant cavity is very low, and the laser cannot oscillate; and when the pump light is continuously increased, the number of reversed particles in the laser resonant cavity is continuously accumulated, the fluorescence in the cavity is gradually increased, and when the saturated light intensity of the graphite alkyne saturable absorber is increased, the absorption intensity of the graphite alkyne saturable absorber on light is obviously reduced, the Q value is rapidly increased, laser oscillation is formed, and the stable output of the intermediate infrared pulse laser is realized.
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