CN101471421A - Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory - Google Patents
Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory Download PDFInfo
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- CN101471421A CN101471421A CNA2007103042203A CN200710304220A CN101471421A CN 101471421 A CN101471421 A CN 101471421A CN A2007103042203 A CNA2007103042203 A CN A2007103042203A CN 200710304220 A CN200710304220 A CN 200710304220A CN 101471421 A CN101471421 A CN 101471421A
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- dyadic
- metallic oxide
- group metallic
- electric resistance
- ion
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- 230000007704 transition Effects 0.000 title claims abstract description 91
- 230000015654 memory Effects 0.000 title claims abstract description 50
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 55
- 150000002500 ions Chemical class 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229960004643 cupric oxide Drugs 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract 4
- 230000010354 integration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 244000227633 Ocotea pretiosa Species 0.000 description 3
- 235000004263 Ocotea pretiosa Nutrition 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910003410 La0.7Ca0.3MnO3 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- -1 gold ion Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007103042203A CN101471421B (en) | 2007-12-26 | 2007-12-26 | Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory |
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Application Number | Priority Date | Filing Date | Title |
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CN2007103042203A CN101471421B (en) | 2007-12-26 | 2007-12-26 | Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory |
Publications (2)
Publication Number | Publication Date |
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CN101471421A true CN101471421A (en) | 2009-07-01 |
CN101471421B CN101471421B (en) | 2010-06-16 |
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CN2007103042203A Expired - Fee Related CN101471421B (en) | 2007-12-26 | 2007-12-26 | Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623638A (en) * | 2012-04-19 | 2012-08-01 | 北京大学 | Resistance random access memory and preparation method thereof |
CN102738387A (en) * | 2011-04-12 | 2012-10-17 | 中国科学院微电子研究所 | Memristor based on TiOx structure and manufacturing method of memristor |
CN103227284A (en) * | 2013-05-09 | 2013-07-31 | 北京大学 | High-consistency high-speed resistive random access memory (RRAM) and producing method thereof |
CN103972386A (en) * | 2014-05-23 | 2014-08-06 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
WO2017031925A1 (en) * | 2015-08-24 | 2017-03-02 | 中国科学院上海微系统与信息技术研究所 | Phase-change type vanadium oxide material and preparation method therefor |
CN106887519A (en) * | 2017-03-20 | 2017-06-23 | 中国科学院微电子研究所 | A kind of preparation method of the resistance-variable storing device for realizing multilevel storage |
CN109065712A (en) * | 2018-08-02 | 2018-12-21 | 中国科学院微电子研究所 | Resistance-variable storing device and preparation method thereof |
WO2020024216A1 (en) * | 2018-08-02 | 2020-02-06 | 中国科学院微电子研究所 | Resistive random access memory and preparation method therefor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5923056A (en) * | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
-
2007
- 2007-12-26 CN CN2007103042203A patent/CN101471421B/en not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738387B (en) * | 2011-04-12 | 2014-12-03 | 中国科学院微电子研究所 | Memristor based on TiOx structure and manufacturing method of memristor |
CN102738387A (en) * | 2011-04-12 | 2012-10-17 | 中国科学院微电子研究所 | Memristor based on TiOx structure and manufacturing method of memristor |
CN102623638B (en) * | 2012-04-19 | 2014-07-02 | 北京大学 | Resistance random access memory and preparation method thereof |
CN102623638A (en) * | 2012-04-19 | 2012-08-01 | 北京大学 | Resistance random access memory and preparation method thereof |
CN103227284A (en) * | 2013-05-09 | 2013-07-31 | 北京大学 | High-consistency high-speed resistive random access memory (RRAM) and producing method thereof |
CN103972386B (en) * | 2014-05-23 | 2017-02-08 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
CN103972386A (en) * | 2014-05-23 | 2014-08-06 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
WO2017031925A1 (en) * | 2015-08-24 | 2017-03-02 | 中国科学院上海微系统与信息技术研究所 | Phase-change type vanadium oxide material and preparation method therefor |
US10858728B2 (en) | 2015-08-24 | 2020-12-08 | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science | Phase-change type vanadium oxide material and preparation method therefor |
CN106887519A (en) * | 2017-03-20 | 2017-06-23 | 中国科学院微电子研究所 | A kind of preparation method of the resistance-variable storing device for realizing multilevel storage |
CN106887519B (en) * | 2017-03-20 | 2020-07-21 | 中国科学院微电子研究所 | Preparation method of resistive random access memory for realizing multi-value storage |
CN109065712A (en) * | 2018-08-02 | 2018-12-21 | 中国科学院微电子研究所 | Resistance-variable storing device and preparation method thereof |
WO2020024216A1 (en) * | 2018-08-02 | 2020-02-06 | 中国科学院微电子研究所 | Resistive random access memory and preparation method therefor |
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Publication number | Publication date |
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CN101471421B (en) | 2010-06-16 |
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Effective date of registration: 20130408 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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