CN101469405A - Tubular target sputtering equipment with lengthened tubular anode - Google Patents
Tubular target sputtering equipment with lengthened tubular anode Download PDFInfo
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- CN101469405A CN101469405A CNA2007103045536A CN200710304553A CN101469405A CN 101469405 A CN101469405 A CN 101469405A CN A2007103045536 A CNA2007103045536 A CN A2007103045536A CN 200710304553 A CN200710304553 A CN 200710304553A CN 101469405 A CN101469405 A CN 101469405A
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- water tank
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- tubular target
- shaped anode
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Abstract
The invention provides a tube-shaped target sputtering apparatus with an elongated tube-shaped anode, which comprises a water tank, a tube-shaped target, an elongated tube-shaped anode, and a plurality of magnets, wherein a water interlayer is arranged in an annular wall of the water tank; the outer annular wall of the tube-shaped target is closely contacted with the inner annular wall of the water tank; the bottom wall of the elongated tube-shaped anode is provided with a plurality of sputtering air inlets and is matched with an anode cover which is connected with an air inlet pipeline; the plurality of magnets are around the circumference of the annular wall of the water tank; the elongated tube-shaped anode is made of an oxygen-free copper material, and an insulating ring of the water tank and the anode cover are made of a polyfluortetraethylene material in an insulating way. In the process of preparing a complicated oxidant film, particularly a LaBaCuO film such as a high temperature YBCO, the tube-shaped target sputtering apparatus with the elongated tube-shaped anode can remarkably improve the negative oxygen ion bombardment and the negative influence such as the accumulation and crumbling of sputtering substances, and has the functions of remarkably improving the growth quality and the performance of the film.
Description
Technical field
The present invention relates to a kind of tubular target sputtering system, the tubular target sputtering system of particularly in the complex oxide film preparation, using.
Background of invention
Tubular target (cylinder target) sputtering system is a kind of technology that adopts in order to tackle the negative oxygen ion bombardment phenomenon that occurs in the complex oxide sputter procedure, its method is to have changed original planar targets sputter into certain thickness cylindric sputtering target material, the ionized Ar gas of process bombards the inwall of tubular target in sputter procedure, drop on and carry out thin film deposition on the heated substrate.The benefit of this mode is each position that can guarantee at sputtering target material, position relation between sputter product and the substrate is in from Spindle Status, thereby the negative oxygen ion of avoiding being gone out by high energy Ar atom bombardment from target directly bombards substrate and film surface, causes the serious deterioration of the inhomogeneous and performance of thin film composition.
Technology in the past when utilizing the sputter of tubular target, many compactedness problems of considering sputter rate and sputtering system (large size tubular negative electrode), its anode is a flush type, size is less, is no more than tubular target internal diameter.Through secular experimental studies have found that, even under the situation that does not apply positive bias, it also is the effective means of eliminating the negative oxygen ion bombardment that anodic loads; If the annode area that loads is less simultaneously, eliminating negative oxygen ion bombardment ability can die down; The gaseous atom of disperse simultaneously is also very fast attached to the speed on the anode under hot conditions, forms problems such as falling slag easily, influences quality of forming film.
Summary of the invention
The tubular target sputtering equipment of the band elongated tube-shaped anode of the purpose of this invention is to provide that a kind of performance for preparing film is good, process window is wide, film surface appearance and homogeneity are all excellent.
To achieve these goals, the present invention takes following technical scheme:
A kind of tubular target sputtering equipment with elongated tube-shaped anode, this sputtering equipment includes:
Water tank, this water tank are tubular, and its top is uncovered, and this open circumferential edges is outwards protruded to form and hung the limit, is combined with insulated ring on it, and is provided with water interlayer in the ring wall of this water tank;
The tubular target, this tubular target is a tubular, and its top and bottom are uncovered, and its bottom places on the interior diapire of water tank, and the integral body of this tubular target is positioned at the bottom of water tank, and the external annulus of this tubular target closely contacts with the internal ring wall of water tank;
Elongated tube-shaped anode, this elongated tube-shaped anode is a tubular, its diapire is provided with the plurality of sputtering air inlet port, its top is uncovered, this open circumferential edges is outwards protruded and is formed the support edge, this is uncovered and be furnished with anode cover, on anode cover, be connected to admission passage, this elongated tube-shaped anode places in the water tank, and extend in the tubular target, the upper position that its bottom is positioned at the tubular target leaves the space between the inwall of its outer wall and tubular target, the support edge of this elongated tube-shaped anode is suspended on the suspension limit of water tank, and by described circle insulation and water tank insulation;
Several piece magnet, this several piece magnet are around a week of the ring wall of water tank, be located on the inwall of water interlayer of water tank at interval, and this several piece magnet is relative with the middle part of tubular target.
The structure of the sputtering equipment that the present invention relates to is divided following several sections: the structure of sputter cathode, gas circuit and cooling water channel.The content of sputtering equipment of the present invention comprises: the design of the design of elongated tube-shaped anode and device, the support of tubular target and water tank reaches the design and the assembling of assembling, sputter gas gas circuit.Core of the present invention is elongated tube-shaped anode and the water tank (negative electrode) that is complementary with it and the structure and the annexation of sputter gas circuit.Sputtering equipment of the present invention places in the vacuum chamber, and in the bottom of water tank heating member is arranged.
In the design of traditional tubular target as sputter,, generally adopt dismountable planar anode in order to save the space.This anode is positioned at the top of sputter cathode (target).Consider the size of conducting tubular target, this anodic planar dimension should be less than the interior circle of tubular target.The benefit of this large size sputtering system (comprising negative electrode and anode) is that structure is compact more, can adopt simultaneously through vacuum-sealing be arranged in sputtering equipment on cover, can move up and down and regulate target-substrate distance by regulating sputter cathode, change sputtering condition.Its disadvantageous aspect is: anode dimension is less, after the long-time sputter of experience, very easily forms the bad rete of one deck electroconductibility because the sputtered atom of disperse deposits on the anode, influences anodic electroconductibility; More serious is through long-time accumulation, and the thicknesses of layers increase may cause falling phenomenon such as slag and drop on the substrate, has a strong impact on the surface topography and the performance of film; Undersized anode also is unfavorable for eliminating the remaining small portion negative oxygen ion bombardment phenomenon of rewinding target sputter simultaneously.Therefore, improving film preparation from the improvement anode is the key that the sputter of tubular target prepares high-performance Y BCO superconducting thin film.From the problem that has showed, anode needs tool to have the dimensions, and also needs to adapt to the concrete shape of tubular target sputtered component simultaneously.Improve through constantly attempting, the present invention proposes the tubular target sputtering equipment of band elongated tube-shaped anode, and change top suspension type sputter cathode into the bottom support formula, the experiment proved that, this cover sputtering system is compared with traditional sputtering system, has the tangible effect that improves high-temperature superconducting thin film quality of forming film and surface uniformity.
In the tubular target sputtering equipment of band elongated tube-shaped anode of the present invention, described cooling water tank, tubular target, elongated tube-shaped anode are cylindric.
In the tubular target sputtering equipment of band elongated tube-shaped anode of the present invention, be provided with feet on the diapire outside described cooling water tank.
In the tubular target sputtering equipment of band elongated tube-shaped anode of the present invention, described elongated tube-shaped anode is that oxygenless copper material is made.
In the tubular target sputtering equipment of band elongated tube-shaped anode of the present invention, the insulated ring on the described water tank, anode cover are the polytetrafluoroethylmaterial material insulation and make.
Target sputtering equipment of the present invention passes through the improvement of hollow tube-shape target sputtering system and perfect, design a kind of tubular target sputtering equipment with elongated tube-shaped anode, through experiment confirm, when RE, Ba and Cu oxide film such as preparation complex oxide film, particularly high temperature YBCO, can significantly improve negative oxygen ion bombardment and sputtering material and pile up negatively influencings such as slag, the significant effect that improves the film growth quality, improves performance is arranged.
Description of drawings
Fig. 1 is the structural representation of elongated tube-shaped anode.Wherein, the 1st, elongated tube-shaped anode, the 2nd, anode cover; The 3rd, admission passage; The 4th, the sputter gas air inlet port
Fig. 2 is the structural representation of anode cover and admission passage.Wherein, the 2nd, anode cover; The 3rd, admission passage.
Fig. 3 is the structural representation of the tubular target sputtering equipment of band elongated tube-shaped anode.The 11st, water tank; The 12nd, the tubular target; The 13rd, water-cooled layer; The 14th, the feet of water tank; The 15th, the several piece magnet; The 16th, insulated ring; The 17th, the support edge; The 18th, hang the limit.
Fig. 4 is that the tubular target sputtering equipment of band elongated tube-shaped anode is contained in the structural representation in the vacuum chamber.Wherein, the 19th, heating member; The 20th, vacuum chamber.
Embodiment
As Fig. 1, Fig. 2, shown in Figure 3, in the tubular target sputtering equipment of band elongated tube-shaped anode of the present invention, tubular target 12 is placed on the diapire in the water tank 11, and the external annulus of tubular target 12 closely contacts with the internal ring wall of water tank 11; The top of tubular target 12 is the internal ring wall than long water tank 11; The elongated tube-shaped anode 1 that adopts is a cylindrical structure, and the diapire of elongated tube-shaped anode 1 is a flush type; The drum diameter size of elongated tube-shaped anode 1 is less than the internal diameter of the cylinder of tubular target 12, and extend in the tubular target 12, its bottom is positioned at the upper position of tubular target 12, leave the space between the inwall of its outer wall and tubular target 12, the support edge 17 of elongated tube-shaped anode 1 is suspended on the suspension limit 18 of water tank 11, and by circle insulation 16 and water tank 11 insulation.The bottom of water tank 11 is feets 14 of three support water tanks 11, in order to fixing water tank 11.In the ring wall of water tank 11, be provided with water interlayer 13, it is a water-filled interlayer, the width dimensions of water interlayer 13 is big slightly, be 2-3cm in the present embodiment, several piece magnet 15 is laid in the inlet chest 11, around a week of the ring wall of water tank 11, on the inwall of the uniform water interlayer that is arranged in water tank 11, relative with the middle part of tubular target 12 around the several piece magnet 15 of a circle.Set several piece magnet 15 in the water interlayer 13 of water tank can guarantee that magnet does not demagnetize, and the water coolant in the water interlayer 13 can cool off tubular target 12 simultaneously, prevents tubular target 12 overheated crackings.Wherein, water interlayer 13 upper and lowers in the water tank 11 connect water inlet pipe, rising pipe respectively, so that water interlayer forms the water-cooled path; Because water interlayer 13 is connected to the water tank negative electrode by its bottom, so this equipment is that with the important difference that designs in the past negative electrode is fixed on the sputtering equipment bottom surface, promptly is fixed on the bottom of water tank 11.Also by the decision of lengthening anodic characteristic, because if adopt the top (loam cake of vacuum chamber when promptly adopting the loam cake opening ways) of sputtering equipment to arrange negative electrode, then required equipment is very high, vacuum cavity is very big, all is unfavorable for the preparation of film for this.
As shown in Figure 4, sputtering equipment of the present invention places in the vacuum chamber 19, and in the bottom of water tank 11 heating member 20 is arranged.
Elongated tube-shaped anode 1 of the present invention adopts oxygenless copper material to make, to prevent that venting influences preparation condition under the vacuum condition.As shown in Figure 1 and Figure 2, be connected to admission passage 3 on the anode cover 2 of elongated tube-shaped anode 1, admission passage 3 is passed into elongated tube-shaped anode 1 inside, the diapire of elongated tube-shaped anode 1 evenly is densely covered with several inlet mouths 4, adopt argon, oxygen gas mixture during sputter, argon, oxygen gas mixture enter elongated tube-shaped anode 1 inside by admission passage 3, and enter in the cavity in the water tank 11 by several inlet mouths 4, guarantee that sputter gas is even.Because can not short circuit between the cathode and anode, otherwise sputter can not build-up of luminance, so the insulated ring 16 on the water tank, anode cover 2 are the polytetrafluoroethylmaterial material insulation and make.
The characteristics of elongated tube-shaped anode 1 are: the ratio of the height of the tube of elongated tube-shaped anode 1 and the diameter of its diapire is very big, the benefit of doing like this is: the diapire of elongated tube-shaped anode 1 not only is equivalent to existing anodic baseplane can eliminate negative oxygen ion, receive upwards disperse, sputter the effect of the atomic deposition of target, and owing to leave sufficient space between the ring wall of elongated tube-shaped anode 1 and the water tank 11, in fact, the ring wall of elongated tube-shaped anode 1 has all played the effect same with existing planar anode in the process of deposit film, greatly increase annode area, improved the plus effect in the sputter procedure.Certainly, along with and sputtering target material between the increase of distance, its effect has very big weakening, so the length of elongated tube-shaped anode 1 should have certain limit.
The experiment proved that, adopt the tubular target sputtering equipment of band elongated tube-shaped anode of the present invention, than common employing facet anodic sputtering equipment, the performance of preparation film is better under similarity condition, process window is wideer, film surface appearance and homogeneity all are better than conventional sputter equipment, has embodied outstanding beneficial effect of the present invention.
When mounted, negative electrode, anode and gas circuit three parts are installed the relation of joining assembling rationally, then form sputtering system of the present invention.Tubular target sputtering equipment of the present invention places in the vacuum chamber 19 (as shown in Figure 4), and whole sputtering system is actually in the vacuum cavity of a sealing, in use, at first vacuum cavity will be evacuated to 10
-3The Pa magnitude; Feed Ar, O again after reaching vacuum tightness
2Mixed gas, before feeding gas, Ar, O
2To in mixing chamber, mix, feed in the vacuum cavity then.
Its embodiment is: YBCO tubular target will be installed be equipped in the vacuum sputter system, and arrange heating system and sample table and place oxide monocrystal substrate sample (as lanthanum aluminate) in the bottom of sputtering system; Substrate sample is heated to 870 ℃, feeds Ar, O
2Mixed gas carries out sputter (sputtering pressure 20Pa, sputtering current 1.6A); After the sputter 6 hours, obtain the ybco film sample of the about 400nm of thickness; Then at 450 ℃ of pure O that feed 0.8atm
2Anneal half an hour, obtain Tc 90K, Jc 2MA/cm
2The ybco film material.
During use, heating member generally adopts the heating furnace body of flush type or flush type platinum sheet etc., be placed on the tubular target under.Distance between the target-substrate of sputter is a target-substrate distance, and target-substrate distance is 60-90mm.Target loads negative voltage, be connected to shielding power supply, when shielding power supply carries out d.c. sputtering, on target, load negative pressure, thereby make the ionization Ar+ ion of process of band malleation get on the target and rely on the sputter area that constrains in of magnetic line of force sputtering material is got target body to drop on the substrate.
Claims (5)
1, a kind of tubular target sputtering equipment with elongated tube-shaped anode, it is characterized in that: this sputtering equipment includes:
Water tank, this water tank are tubular, and its top is uncovered, and this open circumferential edges is outwards protruded to form and hung the limit, is combined with insulated ring on it, and is provided with water interlayer in the ring wall of this water tank;
The tubular target, this tubular target is a tubular, and its top and bottom are uncovered, and its bottom places on the interior diapire of water tank, and the integral body of this tubular target is positioned at the bottom of water tank, and the external annulus of this tubular target closely contacts with the internal ring wall of water tank;
Elongated tube-shaped anode, this elongated tube-shaped anode is a tubular, its diapire is provided with the plurality of sputtering air inlet port, its top is uncovered, this open circumferential edges is outwards protruded and is formed the support edge, this is uncovered and be furnished with anode cover, on anode cover, be connected to admission passage, this elongated tube-shaped anode places in the water tank, and extend in the tubular target, the upper position that its bottom is positioned at the tubular target leaves the space between the inwall of its outer wall and tubular target, the support edge of this elongated tube-shaped anode is suspended on the suspension limit of water tank, and by described circle insulation and water tank insulation;
Several piece magnet, this several piece magnet are around a week of the ring wall of water tank, be located on the inwall of water interlayer of water tank at interval, and this several piece magnet is relative with the middle part of tubular target.
2, the tubular target sputtering equipment of band elongated tube-shaped anode according to claim 1 is characterized in that: described cooling water tank, tubular target, elongated tube-shaped anode are cylindric.
3, the tubular target sputtering equipment of band elongated tube-shaped anode according to claim 1 and 2 is characterized in that: be provided with feet on the diapire outside described cooling water tank.
4, the tubular target sputtering equipment of band elongated tube-shaped anode according to claim 3 is characterized in that: described elongated tube-shaped anode is that oxygenless copper material is made.
5, the tubular target sputtering equipment of band elongated tube-shaped anode according to claim 4 is characterized in that: the insulated ring on the described water tank, anode cover are the polytetrafluoroethylmaterial material insulation and make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103045536A CN101469405B (en) | 2007-12-28 | 2007-12-28 | Tubular target sputtering equipment with lengthened tubular anode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103045536A CN101469405B (en) | 2007-12-28 | 2007-12-28 | Tubular target sputtering equipment with lengthened tubular anode |
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| Publication Number | Publication Date |
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| CN101469405A true CN101469405A (en) | 2009-07-01 |
| CN101469405B CN101469405B (en) | 2010-12-08 |
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| CN2007103045536A Active CN101469405B (en) | 2007-12-28 | 2007-12-28 | Tubular target sputtering equipment with lengthened tubular anode |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102108488A (en) * | 2009-12-29 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Film coating device |
| CN102394210A (en) * | 2011-11-24 | 2012-03-28 | 深圳市创益科技发展有限公司 | Device and method used for preparing transparent conducting film of thin film solar cell |
| CN104894522A (en) * | 2015-05-13 | 2015-09-09 | 安徽普威达真空科技有限公司 | Vacuum film plating device, and film plating method |
| CN106011766A (en) * | 2016-07-15 | 2016-10-12 | 森科五金(深圳)有限公司 | Vacuum furnace body and adopted auxiliary anode |
| CN107620050A (en) * | 2017-11-02 | 2018-01-23 | 安徽普威达真空科技有限公司 | Vacuum coater and film plating process for metal, rod-shaped piece surface |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2719866Y (en) * | 2004-08-13 | 2005-08-24 | 北京有色金属研究总院 | large-size column hollow sputtering cathode |
-
2007
- 2007-12-28 CN CN2007103045536A patent/CN101469405B/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102108488A (en) * | 2009-12-29 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Film coating device |
| CN102394210A (en) * | 2011-11-24 | 2012-03-28 | 深圳市创益科技发展有限公司 | Device and method used for preparing transparent conducting film of thin film solar cell |
| CN102394210B (en) * | 2011-11-24 | 2013-12-11 | 深圳市创益科技发展有限公司 | Device and method used for preparing transparent conducting film of thin film solar cell |
| CN104894522A (en) * | 2015-05-13 | 2015-09-09 | 安徽普威达真空科技有限公司 | Vacuum film plating device, and film plating method |
| CN104894522B (en) * | 2015-05-13 | 2017-12-01 | 安徽普威达真空科技有限公司 | Vacuum coater and film plating process |
| CN106011766A (en) * | 2016-07-15 | 2016-10-12 | 森科五金(深圳)有限公司 | Vacuum furnace body and adopted auxiliary anode |
| CN107620050A (en) * | 2017-11-02 | 2018-01-23 | 安徽普威达真空科技有限公司 | Vacuum coater and film plating process for metal, rod-shaped piece surface |
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| CN101469405B (en) | 2010-12-08 |
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Effective date of registration: 20190626 Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Research Institute of engineering and Technology Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: General Research Institute for Nonferrous Metals |
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