CN101458539B - 电流源电路及电流源的实现方法 - Google Patents
电流源电路及电流源的实现方法 Download PDFInfo
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CN2007100944249A CN101458539B (zh) | 2007-12-11 | 2007-12-11 | 电流源电路及电流源的实现方法 |
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CN2007100944249A CN101458539B (zh) | 2007-12-11 | 2007-12-11 | 电流源电路及电流源的实现方法 |
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CN101458539A CN101458539A (zh) | 2009-06-17 |
CN101458539B true CN101458539B (zh) | 2011-02-02 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106383539B (zh) * | 2016-11-22 | 2018-02-09 | 中国科学院上海高等研究院 | 一种超低功耗低纹波电压基准电路 |
CN107707199A (zh) * | 2017-08-16 | 2018-02-16 | 国民技术股份有限公司 | 一种晶体振荡器供电方法、装置及电子设备 |
CN114967831B (zh) * | 2022-06-09 | 2023-06-02 | 深圳市聚芯影像有限公司 | 一种基准电流源集成电路 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1340750A (zh) * | 2000-08-31 | 2002-03-20 | 凌阳科技股份有限公司 | 低温度系数参考电流源产生电路 |
JP2006330869A (ja) * | 2005-05-24 | 2006-12-07 | Sanyo Electric Co Ltd | レギュレータ回路 |
CN2884287Y (zh) * | 2005-11-16 | 2007-03-28 | 上海贝岭股份有限公司 | 一种电流源或电压源的启动电路 |
CN101042591A (zh) * | 2006-03-24 | 2007-09-26 | 智原科技股份有限公司 | 低供应电压的能隙参考电路与供应能隙参考电流的方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1340750A (zh) * | 2000-08-31 | 2002-03-20 | 凌阳科技股份有限公司 | 低温度系数参考电流源产生电路 |
JP2006330869A (ja) * | 2005-05-24 | 2006-12-07 | Sanyo Electric Co Ltd | レギュレータ回路 |
CN2884287Y (zh) * | 2005-11-16 | 2007-03-28 | 上海贝岭股份有限公司 | 一种电流源或电压源的启动电路 |
CN101042591A (zh) * | 2006-03-24 | 2007-09-26 | 智原科技股份有限公司 | 低供应电压的能隙参考电路与供应能隙参考电流的方法 |
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Application publication date: 20090617 Assignee: Wuxi Puya Semiconductor Co., Ltd. Assignor: Shanghai Huahong NEC Electronics Co., Ltd. Contract record no.: 2012310000216 Denomination of invention: Current source circuit and current source implementing method Granted publication date: 20110202 License type: Exclusive License Record date: 20121211 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |