CN101447647A - Series connection structure of vertical cavity surface emitting laser array - Google Patents
Series connection structure of vertical cavity surface emitting laser array Download PDFInfo
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- CN101447647A CN101447647A CNA2008100516240A CN200810051624A CN101447647A CN 101447647 A CN101447647 A CN 101447647A CN A2008100516240 A CNA2008100516240 A CN A2008100516240A CN 200810051624 A CN200810051624 A CN 200810051624A CN 101447647 A CN101447647 A CN 101447647A
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Abstract
The invention relates to a series connection structure for vertical cavity surface emitting laser (VCSEL) array, relating to the technical field of photoelectrons and semiconductors. The structure comprises a thermal deposit, a metal membrane on the surface of the thermal deposit, VCSEL array chips, a metal strip, an inflowing electrode, an outflowing electrode, gold wire leads, and a luminescence unit. The invention realizes the series connection of the VCSEL array, and the structure is compact; all the leads are distributed at the outer side; the VCSEL chips are arranged densely; the effective luminescence area is large and the luminescence density is large. Under the premise of not increasing a drive current, the output power of the VCSEL array is further improved, and the application range of the VCSEL array is expanded. A high-thermalconductivity material is used as the thermal deposit to radiate heat; moreover, a welding material with higher thermalconductivity is used; in addition, the working mode of the VCSEL array chips is to work by pulses, thereby solving the problem of heat radiation.
Description
Technical field:
The present invention relates to photoelectron and technical field of semiconductors, relate in particular to the series connection structure of a kind of vertical cavity surface emitting laser (vertical-cavity surface-emitting laser is VCSEL) array chip, be applicable to fields such as military affairs, medical treatment, industrial processes.
Background technology:
The attention that semiconductor laser is little, in light weight with its volume, the life-span long, the efficient advantages of higher has attracted people more and more.And vertical cavity surface emitting laser wherein has the not available advantage of many traditional edge-emitting lasers, for example cheap for manufacturing cost, good reliability, spectrum and good beam quality etc.Therefore vertical cavity surface emitting laser has bright development prospect.In order to expand the application of vertical cavity surface emitting laser, we just need further to improve its power output.
Effective ways that improve power output are exactly the integrated level that increases the VCSEL array, but, drive current is increased significantly so increase the number of luminescence unit in the array because the luminescence unit connected mode each other in the VCSEL array is in parallel.Threshold current 1A according to a luminescence unit calculates, drive current is 3 times of threshold current, promptly 3 pacify, if integrated 1000 VCSEL luminescence units of array, drive current will need 3000A so, this has just brought the problem of a sternness to us, so big current source is difficult to obtain.The invention provides a kind of structure that a plurality of VCSEL array chips are cascaded in order to solve this difficult problem, this structure can interconnect the mode of a plurality of VCSEL array chips with series connection, increased luminescence unit quantity greatly, thereby increase the power output of total, and drive current does not increase significantly.
Summary of the invention
In order to solve the problem that exists in the background technology, the present invention proposes a kind of novel VCSEL array chip series connection structure.
That vertical-cavity surface-emitting laser array series connection structure of the present invention comprises is heat sink 1, metal film 2, VCSEL array chip 3, the bonding jumper 4 of heat sink surface, flow into electrode 51, flow out electrode 52 and spun gold lead-in wire 6, comprises M * M luminescence unit 7 in each vertical-cavity surface-emitting laser array chip 3;
The position of each several part and annexation: the appointed area deposited metal film 2 on heat sink 1, vertical-cavity surface-emitting laser array chip 3 is welded in the zone of deposited metal film 2 on heat sink 1, again bonding jumper 4 is welded on the zone of deposited metal film 2 on heat sink 1, spun gold lead-in wire 6 is connected vertical-cavity surface-emitting laser array chip 3 with bonding jumper 4, electric current flows into by flowing into electrode 51, flow into each vertical-cavity surface-emitting laser array chip 3 by the spun gold lead-in wire, flow out from flowing out electrode 52 at last, vertical-cavity surface-emitting laser array chip 3 arrangement mode in the metal film zone is N * N, N * N is the number of vertical-cavity surface-emitting laser array chip 3, N is the positive integer of 2-10 among the present invention
Wherein each vertical-cavity surface-emitting laser array chip 3 comprises M * M luminescence unit 7, M is 2-30 positive integer among the present invention, and each luminescence unit 7 comprises substrate 8, grow in following speculum 9 on the substrate, grow in down active layer 10 on the speculum, grow in the upper reflector 12 on the active layer, the top electrode 14 in the upper reflector outside, the bottom electrode 13 in the substrate outside.
Wherein heat sink material can be a diamond, it also can be the material of thermal conductivity height such as high heat-conducting ceramic and good insulating, following speculum 10 generally is that 30 to 40 pairs of speculums are formed, and can be that the deielectric-coating speculum also can be a distribution Bragg reflector, and the deielectric-coating reflecting mirror material can be SiO
2/ TiO
2, and the material of Bragg mirror can be GaAs/AlGaAs etc., upper reflector 12 is made up of 20 to 30 pairs of speculums, can be that the deielectric-coating speculum also can be a distributed bragg reflector mirror, the material of deielectric-coating speculum can be SiO
2/ TiO
2/ SiO
2/ Au, the material of Bragg mirror can be that the material of GaAs/AlGaAs etc., bonding jumper 4 can be that the metal that conducts electricity very well such as Au or Cu plating Au, the material of top electrode 14 can be Zn-Au, In-Au, Cr-Au, Ti-Pt-Au, In-Ag-Au, Ti-Ag-Au, Ti-Pt etc., the material of wherein commonly used is Zn-Au and Ti-Pt-Au, bottom electrode 13 is Au/Ge/Ni/Au.
The invention provides a kind of series connection structure of VCSEL array, utilize this structure the VCSEL array chip can be connected in series, increase the area of VCSEL array, thereby effectively increase power output, and, drive current is obviously increased because the VCSEL array chip in this invention is cascaded.
Compact conformation of the present invention, all lead-in wires all are distributed in the outside, and the VCSEL array chip is arranged closely, and effectively light-emitting area is big, and luminous density is big.
In addition, the present invention uses highly heat-conductive material as heat sink heat radiation, uses the higher scolder of heat conduction efficiency again, and the working method of VCSEL array chip is a pulsed operation in addition, therefore, has solved heat dissipation problem substantially.
Description of drawings
Fig. 1 shows the schematic diagram at heat sink fixed area deposited metal film.
Fig. 2 shows vertical cavity surface emitting laser and array chip and bonding jumper is welded on evaporation schematic diagram on metal film heat sink is arranged.
Fig. 3 shows the vertical view of the series connection structure of vertical-cavity surface-emitting laser array.
Comprise heat sink 1, heat sink surface metal film 2, VCSEL array chip 3, bonding jumper 4, flow into electrode 51, flow out electrode 52, spun gold lead-in wire 6, luminescence unit 7.
Fig. 4 shows the cross sectional side view of the series connection structure of vertical-cavity surface-emitting laser array.
Fig. 5 shows the vertical view of vertical-cavity surface-emitting laser array chip.
Fig. 6 is the end view of the single luminescence unit of vertical-cavity surface-emitting laser array chip.
Fig. 7 is that the embodiment of 3 vertical-cavity surface-emitting laser array chip is connected in series the mode schematic diagram for N.
Fig. 8 is that the embodiment of 4 vertical-cavity surface-emitting laser array chip is connected in series the mode schematic diagram for N.
Embodiment
Embodiment one
Specifically describe this invention now with reference to Fig. 1 to Fig. 3.
With reference to Fig. 1, the present invention select highly heat-conductive material as heat sink material improving the capacity of heat transmission of device, the appointed area deposited metal film 2 on heat sink, promptly evaporation Au/Ge/Ni/Au or other electric conductivity good metal are used for conduction current.
With reference to Fig. 2, VCSEL array chip 3 is welded on the heat sink zone that evaporation has metal film 2 of going up, Fig. 5 is a VCSEL array chip schematic diagram, chip 3 sizes are about 8-10mm * 8-10mm, the chip gross area accounts for about 75% of metal film 2 areas, scolder is the Au/Sn scolder, bonding jumper 4 is welded on heat sink zone of going up deposited metal film 2 again and is used for conduction current, the size of bonding jumper 4 is decided according to the quantity of required spun gold lead-in wire 6, for example if drive current is 25A, by whenever calculating with spun gold 0.8A, need spun gold 30-35 to follow, spacing at least 4 between spun gold-5 times, 30 microns of spun gold diameters, then bonding jumper length should be 4.5mm-6mm, and scolder is the In scolder.The selection of this place's scolder is that therefore heating and melting In scolder can not impact the VCSEL array chip 3 that has welded when weld metal bar 4 because the fusing point of Au/Sn scolder is higher than the In scolder.Next step spun gold lead-in wire requires the height of VCSEL array chip consistent with the height of bonding jumper for convenience.
With reference to Fig. 3, utilize gold ball bonding that bonding jumper 4 and VCSEL array chip 3 are linked together.The spun gold number is decided by required drive current.Draw and flow into electrode 51, flow out electrode 52.
Electric current flows into by electrode 51, flows into VCSEL array chip 301 by the spun gold lead-in wire, flows through 302,303,304 more successively, flows out from electrode 52 at last.
Embodiment two
With reference to Fig. 7, this figure is the serial connection schematic diagram of 3 * 3 arrays, the high materials of thermal conductivity such as heat sink 1 use diamond wherein or high heat-conducting ceramic, at the appointed area of heat sink surface deposited metal film 2, institute's materials used is the conduction good metal, VCSEL array chip 3 is welded on the zone that evaporation has metal film 2, number of chips is N * N, wherein N is 3, chip 3 adds up to 9, and the chip gross area accounts for about 75% of metal film region area, and bonding jumper 4 is welded on the metal film zone, utilize gold wire bonder that VCSEL array chip 3 is connected with bonding jumper 4 usefulness spun golds lead-in wire 6, draw and flow into electrode 51, flow out electrode 52.
Electric current is flowed into by electrode 51, is injected in the VCSEL array chip 301 by the spun gold lead-in wire, more successively by VCSEL array chip 302,303,304,305,306,307,309,308, is flowed out by electrode 52 at last.
Embodiment three
With reference to Fig. 8, this figure is the serial connection schematic diagram of 4 * 4 arrays, the high materials of thermal conductivity such as heat sink 1 use diamond wherein or high heat-conducting ceramic, at the appointed area of heat sink surface deposited metal film 2, institute's materials used is the conduction good metal, VCSEL array chip 3 is welded on the zone that evaporation has metal film 2, number of chips is N * N, wherein N is 4, chip 3 adds up to 16, and the gross area accounts for about 75% of metal film region area, and bonding jumper 4 is welded on the zone that evaporation has metal film 2, utilize gold wire bonder that VCSEL array chip 3 is connected extraction electrode 51 with bonding jumper 4 usefulness spun golds lead-in wire 6,52.
Electric current is flowed into by electrode 51, be injected in the VCSEL array chip 301 by the spun gold lead-in wire, inject VCSEL array chip 302,303,304,305,306,307,308,309,310,311,312,313,314,315,316 more successively, flow out by electrode 52 at last.
Claims (4)
1, a kind of novel vertical-cavity surface-emitting laser array series connection structure is characterized in that: this structure comprise heat sink (1), heat sink surface metal film (2), vertical-cavity surface-emitting laser array chip (3), bonding jumper (4), flow into electrode (51), flow out electrode (52) and spun gold lead-in wire (6), comprise M * M luminescence unit (7) in each vertical-cavity surface-emitting laser array chip (3);
The position of each several part and annexation: the appointed area deposited metal film (2) on heat sink (1), vertical-cavity surface-emitting laser array chip (3) is welded on heat sink (1) and goes up in the zone of deposited metal film (2), again bonding jumper (4) is welded on heat sink (1) and goes up the zone of deposited metal film (2), spun gold lead-in wire (6) is connected vertical-cavity surface-emitting laser array chip (3) with bonding jumper (4), electric current flows into by flowing into electrode (51), flow into each vertical-cavity surface-emitting laser array chip (3) by the spun gold lead-in wire, flow out from flowing out electrode (52) at last, vertical-cavity surface-emitting laser array chip (3) arrangement mode in the metal film zone is with N * N, N * N is the number of vertical-cavity surface-emitting laser array chip (3), and N is the positive integer of 2-10 among the present invention.
2, VCSEL array series connection structure according to claim 1, it is characterized in that: each vertical-cavity surface-emitting laser array chip (3) comprises M * M luminescence unit (7), each luminescence unit (7) comprises substrate (8), grow in following speculum (9) on the substrate, grow in down active layer (10) on the speculum, grow in the upper reflector (12) on the active layer, the top electrode (14) in the upper reflector outside, the bottom electrode (13) in the substrate outside, and M is the positive integer of 2-30 among the present invention.
3, VCSEL array series connection structure according to claim 1 and 2, it is characterized in that the luminescence unit (7) in the described vertical-cavity surface-emitting laser array chip (3), speculum (9) is the distributed bragg reflector mirror or the deielectric-coating speculum of N type under it, following speculum (9) generally is that 30 to 40 pairs of speculums are formed, upper reflector (12) is the distributed bragg reflector mirror or the deielectric-coating speculum of p type, and upper reflector (12) is made up of 20 to 30 pairs of speculums.
4, vertical-cavity surface-emitting laser array series connection structure according to claim 1 and 2, it is characterized in that the big or small 8-10mm * 8-10mm of vertical-cavity surface-emitting laser array chip (3), the chip gross area accounts for about 75% of metal film region area, the spun gold lead-in wire requires the height of vertical-cavity surface-emitting laser array chip (3) consistent with the height of bonding jumper (4) for convenience.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856790A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Side pump source of vertical-cavity surface-emitting laser and manufacturing method of side pump source |
| CN104332822A (en) * | 2014-11-10 | 2015-02-04 | 李德龙 | Optical convergence method of VCSEL (Vertical Cavity Surface Emitting Laser) and packing structure of VCSEL |
| WO2016074299A1 (en) * | 2014-11-10 | 2016-05-19 | 李德龙 | High-power semiconductor laser based on vcsel and optical convergence method therefor |
| CN107134713A (en) * | 2017-06-13 | 2017-09-05 | 西安理工大学 | A kind of heat-radiating substrate for high-power V CSEL chips |
| CN107872006A (en) * | 2017-12-27 | 2018-04-03 | 中国科学院长春光学精密机械与物理研究所 | A kind of surface-emitting semiconductor laser coherence array device and preparation method thereof |
| CN108736317A (en) * | 2018-05-15 | 2018-11-02 | 深圳市光脉电子有限公司 | A kind of light emitting diode epitaxial structure and its matrix form laser device |
| CN109770886A (en) * | 2019-01-03 | 2019-05-21 | 中国科学院半导体研究所 | Flexibility can sticking type blood flow velocity test macro and its construction method |
| CN111555112A (en) * | 2020-05-21 | 2020-08-18 | 常州纵慧芯光半导体科技有限公司 | Light-emitting device, manufacturing method thereof and laser equipment |
| CN111803797A (en) * | 2020-06-10 | 2020-10-23 | 殷硕仑 | Short-wave infrared integrated medical light source and application |
| US10825952B2 (en) | 2017-01-16 | 2020-11-03 | Apple Inc. | Combining light-emitting elements of differing divergence on the same substrate |
| US11322910B2 (en) | 2019-02-21 | 2022-05-03 | Apple Inc. | Indium-phosphide VCSEL with dielectric DBR |
| US11374381B1 (en) | 2019-06-10 | 2022-06-28 | Apple Inc. | Integrated laser module |
| US11418010B2 (en) | 2019-04-01 | 2022-08-16 | Apple Inc. | VCSEL array with tight pitch and high efficiency |
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2008
- 2008-12-22 CN CN2008100516240A patent/CN101447647B/en active Active
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856790A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Side pump source of vertical-cavity surface-emitting laser and manufacturing method of side pump source |
| US10199801B2 (en) | 2014-11-10 | 2019-02-05 | Sanhe Laserconn Tech Co., Ltd. | High-power semiconductor laser based on VCSEL and optical convergence method therefor |
| CN104332822A (en) * | 2014-11-10 | 2015-02-04 | 李德龙 | Optical convergence method of VCSEL (Vertical Cavity Surface Emitting Laser) and packing structure of VCSEL |
| WO2016074299A1 (en) * | 2014-11-10 | 2016-05-19 | 李德龙 | High-power semiconductor laser based on vcsel and optical convergence method therefor |
| US10825952B2 (en) | 2017-01-16 | 2020-11-03 | Apple Inc. | Combining light-emitting elements of differing divergence on the same substrate |
| CN107134713A (en) * | 2017-06-13 | 2017-09-05 | 西安理工大学 | A kind of heat-radiating substrate for high-power V CSEL chips |
| CN107872006A (en) * | 2017-12-27 | 2018-04-03 | 中国科学院长春光学精密机械与物理研究所 | A kind of surface-emitting semiconductor laser coherence array device and preparation method thereof |
| CN108736317A (en) * | 2018-05-15 | 2018-11-02 | 深圳市光脉电子有限公司 | A kind of light emitting diode epitaxial structure and its matrix form laser device |
| CN109770886A (en) * | 2019-01-03 | 2019-05-21 | 中国科学院半导体研究所 | Flexibility can sticking type blood flow velocity test macro and its construction method |
| US11322910B2 (en) | 2019-02-21 | 2022-05-03 | Apple Inc. | Indium-phosphide VCSEL with dielectric DBR |
| US11418010B2 (en) | 2019-04-01 | 2022-08-16 | Apple Inc. | VCSEL array with tight pitch and high efficiency |
| US11374381B1 (en) | 2019-06-10 | 2022-06-28 | Apple Inc. | Integrated laser module |
| CN111555112A (en) * | 2020-05-21 | 2020-08-18 | 常州纵慧芯光半导体科技有限公司 | Light-emitting device, manufacturing method thereof and laser equipment |
| CN111803797A (en) * | 2020-06-10 | 2020-10-23 | 殷硕仑 | Short-wave infrared integrated medical light source and application |
| CN111803797B (en) * | 2020-06-10 | 2022-07-08 | 殷硕仑 | Short-wave infrared integrated medical light source and application |
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| CN101447647B (en) | 2010-08-11 |
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Effective date of registration: 20220621 Address after: 130102 first floor, building 2, incubation base, No. 19, Yingkou Road, Changchun Economic Development Zone, Jilin Province Patentee after: Jiguang Semiconductor Technology Co.,Ltd. Address before: 130033, 16 southeast Lake Road, Jilin, Changchun Patentee before: CHANGCHUN INSTITUTE OF OPTICS, FINE MECHANICS AND PHYSICS, CHINESE ACADEMY OF SCIENCE |