CN111803797B - Short-wave infrared integrated medical light source and application - Google Patents
Short-wave infrared integrated medical light source and application Download PDFInfo
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Abstract
A short wave infrared integrated medical light source comprising the following components: the packaging structure comprises a packaging substrate, a vertical cavity surface emitting laser chip, a substrate electrode and a substrate positioning hole; the main body of the packaging substrate is made of a high-thermal-conductivity ceramic material, or an aluminum plate or a copper plate; the substrate is covered with a high-strength heat-conducting insulating film material, a chip electrical connection circuit is prepared on the heat-conducting insulating film, and the circuit is covered with a high-strength insulating film; reserving positive and negative electrode regions of a connecting circuit on an insulating film covered on the upper part of the substrate; the central area of the substrate is a placement area of the vertical cavity surface emitting laser chip. The invention provides a short wave infrared integrated medical light source packaged by a certain process, and provides a short wave infrared integrated medical light source system of medical and household rehabilitation treatment equipment of a vertical cavity surface emitting laser chip array.
Description
Technical Field
The invention belongs to the field of medical health-care rehabilitation medical equipment, and particularly relates to a short-wave infrared integrated medical light source and application thereof.
Background
In modern medicine, the method of studying and applying natural or artificial physical factors to act on human body and achieving the purposes of health care, prevention, treatment and rehabilitation through physiological regulation mechanisms of nerves, body fluid, internal secretion, immunity and the like of the human body is called physical therapy, which is called physical therapy for short. The physiotherapy means includes massage therapy, acupuncture therapy, electrotherapy, phototherapy and magnetotherapy. Infrared therapy has been widely used in clinical treatment as one of the means of phototherapy.
Infrared is an invisible light having a wavelength in the range of 760nm to 15um in the electromagnetic spectrum. The current medical infrared ray is divided into two sections, namely short-wave infrared ray (also called near infrared ray, wavelength 760nm-1.5um) and long-wave infrared ray (also called far infrared ray, wavelength 1.5um-15 um). Physical light has an increasing ability to penetrate human tissue as the wavelength increases (i.e., the photon energy decreases). The penetration depth of the short wave infrared ray to human tissues is 1mm-10mm and can reach dermis and subcutaneous tissues, while the penetration depth of the long wave infrared ray to human tissues is 0.05mm-1mm and only reaches the superficial layer of human epidermis because the long wave infrared ray can be strongly absorbed by water in the human epidermis.
After the infrared photon energy is absorbed by the skin and subcutaneous tissue, the following therapeutic effects can be produced: causing vasodilatation, acceleration of blood flow, improvement of local blood circulation, enhancement of tissue nutrient metabolism; accelerate local exudate absorption and promote the resolution of swelling. Reducing the muscle tension of skeletal muscle, relaxing gastrointestinal smooth muscle and relieving muscle spasm. Reduce sensory nerve excitation and increase pain threshold. Meanwhile, the comprehensive factors of improvement of blood circulation, improvement of ischemia and anoxia, absorption of exudates, fading of swelling, relief of spasm and the like can achieve the treatment effect of analgesia.
It can be seen from the above infrared treatment mechanism that the short wave infrared treatment has better curative effect on soft tissue contusion (such as pathological damage of skin, subcutaneous superficial and deep fascia, muscle, tendon sheath, ligament, joint capsule, synovial capsule, intervertebral disc, peripheral nerve vessel and other tissues) due to the large penetration depth of the short wave infrared to human tissues.
For some acute trauma, long wave infrared therapy is prohibited due to the large amount of heat generated. The ice compress method is usually used after acute injury occurs, and long-wave infrared ray therapy can be used after local hemorrhage and exudation stop after about 24-48 hours. The short-wave infrared photon energy is not easy to be absorbed by the moisture in the epidermis of the human body, so that a large amount of heat can not be generated in the treatment process, and the photon energy is absorbed by deep tissues to play the treatment effects of analgesia and the like.
In addition, short-wave infrared therapy also has an advantage in terms of safety in use. Since long wave infrared devices generate a large amount of heat during use, such treatment devices require a specialized therapist to operate during use. Patients are also easily scalded when using similar home treatment devices.
Despite the advantages of short wave infrared therapy, short wave infrared therapy has not been common. This is mainly due to the fact that short-wave infrared light sources are not readily available. Since the absorption coefficient of water molecules to infrared light with a wavelength above about 1um increases in a series manner, the penetration capacity to human tissues is strongest, or the most effective wavelength for the rehabilitation treatment of human tissues should be about 1 um. YAG laser (1064nm wavelength) has been used in hospital pain department for patient rehabilitation, and has achieved good curative effect. Such lasers are expensive and have only found use in pain departments in large hospitals and must be operated by a specialized physician when used. With the progress of LED (light-emitting diode) chip technology in recent years, LED single-color chips from ultraviolet (365nm) to near infrared (1550nm) are available. Since the LED chip has a light emitting angle of 120 degrees, it is difficult to obtain a light source having a clear spot. Although clear light spots can be obtained by using a special combined lens technology, the transmitted light power density of the light after passing through the multiple lenses is greatly reduced, and the emergent short-wave infrared light has no good medical value.
In addition to the requirement of the light source wavelength and the power density thereof for rehabilitation therapy, as the main components of medical equipment, it also needs to meet a series of regulatory requirements of the national food and drug administration, as in the first part of medical electrical equipment: general requirements for safety (GB 9706.1-2007), "safety part 1 of laser products: the regulations and documents such as the device classification, requirement (GB 7247.1-2012), the specific electromagnetic wave therapeutic apparatus (YY/T0061-2007) and the special requirement for the safety of the heat radiation therapeutic apparatus (YY 0306-2008) are disclosed. According to section 1 of safety of laser products: the classification of devices, requirements (GB 7247.1-2012) stipulates that therapeutic devices in the short-wave infrared band should not irradiate the human body with a power density exceeding 200mW/cm2。
Based on the above facts, the short wave infrared treatment method has not yet been widely used in the field of rehabilitation therapy (including home therapy).
Aiming at the technical difficulties and the defects in use in the field of short wave infrared treatment light sources, the invention discloses a short wave infrared integrated medical light source, and the technical scheme is that a low-power vertical cavity surface emitting laser chip with the wavelength of 940nm is packaged into an integrated medical light source through a certain process. The integrated light source has high luminous efficiency, clear light spots, safety and reliability, and is suitable for the application in the field of medical health-care rehabilitation equipment. The integrated short-wave infrared light source can be used for manufacturing health-care rehabilitation medical equipment which is respectively applied to hospitals and families.
Disclosure of Invention
The invention aims to overcome the defects that long-wave infrared treatment equipment in the field of current health-care rehabilitation treatment equipment is not obvious in curative effect, limited in indications (such as incapability of being used for acute soft tissue contusion) and hidden danger of scalding of a patient in a treatment process, and the existing short-wave infrared treatment equipment (such as a high-energy laser treatment instrument) is high in price and needs manual care in a use process. And the short wave infrared integrated medical light source system is used for the short wave infrared integrated medical light source of the rehabilitation medical equipment.
The technical scheme of the invention is that the short-wave infrared integrated medical light source comprises the following components: a package substrate, a vertical cavity surface emitting laser chip (array), a substrate electrode, a substrate positioning hole; the main body of the packaging substrate is made of high-heat-conductivity ceramic materials, or aluminum plates or copper plates; the substrate is covered with a high-strength heat-conducting insulating film material, a chip electrical connection circuit is prepared on the insulating heat-conducting film, and the circuit is covered with a high-strength insulating film; reserving positive and negative electrode areas of a connecting circuit on the heat-conducting insulating film covered on the upper part of the substrate; the central area of the substrate is a placement area of the vertical cavity surface emitting laser chip; the vertical cavity surface emitting laser chip comprises the following three parts: an upper distributed Bragg reflector (P-DBR), an active region, and a lower distributed Bragg reflector (N-DBR); the active region material system is GaInAs/GaAs material; the light-emitting mode of the vertical cavity surface emitting laser chip adopts an ejection mode, the emitted laser beam is a circular light spot, the outer edge of the light beam forms an angle of 12 +/-3 degrees with the perpendicular bisector of the chip, and the central wavelength of the light emitted by the chip is about 940 nm; the optical power of a single vertical cavity surface emitting laser chip ranges from 0.1W to 1W.
The upper covered insulating film is reserved with positive and negative electrode regions 3 for connecting the circuit. The central region of the substrate is the placement region of the array of vertical cavity surface emitting laser chips 2, or referred to as a light emitting region. The Vertical Cavity Surface Emitting Laser (VCSEL) chip mainly comprises three parts, namely an upper distributed Bragg reflector (P-DBR), an active region and a lower distributed Bragg reflector (N-DBR), wherein the active region material system is GaInAs/GaAs material.
When current is injected from the electrode, population inversion is realized in the active region, optical gain is generated after the condition of stimulated radiation is met, generated photons are reflected by the P-DDBR and the N-DBR, stable standing waves are formed in a resonant cavity formed by the P-DBR and the N-DBR, the stimulated radiation is continuously enhanced, and therefore the laser light is emitted from the DBR with smaller reflectivity, and light waves are stably output. The light emitting mode of the vertical cavity surface emitting laser adopts a top emitting mode. By applying a suitable voltage between the upper and lower electrodes and passing a suitable current, the VCSEL chip can emit a laser beam having a circular spot from the upper surface, the outer edge of the circular spot of the laser beam forming an angle of, especially, about 12 DEG with the perpendicular bisector of the chip.
The short wave infrared integrated medical light source can comprise a plurality of vertical cavity surface emitting laser chips, and the specific number is determined according to the total optical power designed by the light source, so that the medical light source comprises the integrated vertical cavity surface emitting laser chips. The optical power of a single vertical cavity surface emitting laser chip ranges from 0.1W to 1W.
The multiple vertical cavity surface emitting laser chips can be arranged in a square outline, a rectangular outline, a similar circular outline or any plane pattern in a chip packaging area (light emitting area) of the substrate; the irradiation area (or light spot) of the integrated vertical cavity surface emitting laser chip emergent light is consistent with the outline of the package on the substrate; the size of the spot is related to the vertical distance of the illuminated area from the chip, the farther away the spot is, the larger the spot is.
The laser chip is an array comprising a plurality of vertical cavity surface emitting laser chips, and is an integrated laser chip; the multiple vertical cavity surface emitting laser chips are arranged in a chip packaging area of the substrate to form a square outline, a rectangular outline, a similar circular outline or any other plane pattern; the irradiation area or light spot of the emergent light of the chip array is consistent with the outline of the package on the substrate; the size of the spot is related to the vertical distance of the illuminated area from the chip, the farther away the spot is, the larger the spot is.
Laser chips with red light wavelength are placed at certain positions of the vertical cavity surface emitting laser chip array; the red laser chips are placed at the corners of a square or rectangular array, or at the ends of two mutually perpendicular diameters of a central or circular array. Such as 808nm bright red light (which itself has biological effect capabilities).
The connection mode among the chips in the vertical cavity surface emitting laser chip array is that 3-8 chips in each row or each column are connected in series, 3-8 chips in series are connected in parallel in rows or columns to form n series-m parallel circuits, namely a hybrid circuit, and then the positive and negative electrodes of the hybrid circuit are respectively connected with the positive and negative electrodes reserved on the substrate; a gold gasket is arranged between the single vertical cavity surface emitting laser chip and the substrate, the gold gasket is used for contacting with the chip bottom electrode and leading out the bottom electrode, and the connection between the electrode leads at two ends of each serial chip row or column and the substrate electrode adopts a silicon wafer platform transitional connection mode.
The short-wave infrared integrated medical light source system is used for a short-wave infrared integrated medical light source system of rehabilitation medical equipment and comprises a radiator, a short-wave infrared integrated medical light source, a cooling fan and a combined lens; the radiator is made of metal aluminum, copper or high-heat-conductivity ceramic; the combined lens is a parallel light lens (slightly expanding beam), and images of a vertical cavity surface emitting laser chip array in the short-wave infrared integrated medical light source are formed in front of a light source system; the physical size of the vertical cavity surface emitting laser chip array, the light power of single chip, the interval between single laser chips, the focal length of the combined lens group, the material and the light transmittance of the combined optical lens in the light source system have synergistic effect, and the light power density at the position 15cm away from the front of the light outlet of the light source system is ensured to be less than 200mW/cm2。
The short-wave infrared integrated medical light source is used for a short-wave infrared integrated medical light source system of rehabilitation medical equipment and comprises a radiator, a short-wave infrared integrated medical light source, a cooling fan and a light outlet cylinder; the radiator is made of metal aluminum, copper or high-heat-conductivity ceramic; the light outlet cylinder guides the short-wave infrared light emitted by the vertical cavity surface emitting laser chip array in the short-wave infrared integrated medical light source to the front of a light source system; light emissionThe light outlet at the top of the cylinder is provided with a transparent window sheet, the material of the window sheet is acrylic, glass or quartz, and the thickness of the window sheet is 0.5-3 mm; covering a layer of semitransparent PET film on the inner surface of the transparent window sheet, wherein the thickness of the PET film is 20-100 um; the physical dimension of the vertical cavity surface emitting laser chip array, the optical power of the single chips, the interval between the single chips, the transparent window sheet of the light outlet tube and the light transmittance of the PET film in the light source system have a synergistic effect, so that the optical power density at the light outlet of the light source system is ensured to be less than 200mW/cm2。
The rated working voltage of a single 940nm vertical cavity surface emitting laser chip is 1.9V, the rated current is 200mA, and the luminous power is 355 mW.
The light emitting characteristics of the 808nm vertical cavity surface emitting laser chip are similar to those of the 940nm vertical cavity surface emitting laser chip, and the circuit can emit weak red light after being switched on, so that the light spot area of the integrated chip can be roughly determined.
According to section 1 of safety of laser products: the device Classification, requirement (GB 7247.1-2012) states that the laser power density of the infrared band irradiated on the human body must be less than 200mW/cm2(the light outlet of the infrared medical equipment is generally kept about 15cm away from the light receiving area of the patient during treatment). To meet this condition, the geometric distance between the chips on the package substrate and the distance of the chip array from the human body must be carefully designed to meet regulatory requirements.
As shown in the schematic diagram of fig. 3, if the array profile of the ic is square, the light output power density of the short wave infrared light of the ic can be estimated as follows.
As shown in fig. 4, if the side length of the integrated chip with the square outline is D, the distance between the chip and the irradiated part of the patient is L, and the side length of the square infrared spot irradiated on the body part of the patient is R, then:
R＝D+2L*tanα
the optical power density of the short wave infrared light irradiation received by the surface of the patient is as follows:
in the formula, W is the total optical power W of the integrated vertical cavity surface emitting laser chip equal to Nw, W is the optical power of a single chip, and N is the number of chips.
Preferably, the vertical cavity surface emitting laser chip with small power has the optical power density range of 0.1-1W.
Although the short-wave infrared light of a small spot emitted by a single high-power vertical cavity surface emitting laser chip can be expanded by using an optical lens technology (or a combined lens technology) to satisfy the safety part 1 of laser products: the classification and requirements of the equipment (GB 7247.1-2012) stipulate that short-wave infrared beams with high power density at the light outlet still cause accidental injury to patients.
The packaging of the short wave infrared integrated chip adopts the following steps:
1) fixing the crystal, namely fixing the vertical cavity surface emitting laser chip in a chip arrangement area in the center of the substrate according to a designed array pattern; the chip array may have a square, rectangular, or circular-like shape, or any other shape.
In order to lead out the bottom electrode, a metal gasket with good heat conduction and electric conductivity is used as the middle contact between the vertical cavity surface emitting laser chip and the substrate when the chip is packaged; the metal gasket is preferably a gold or aluminum sheet.
2) The bonding wires and the vertical cavity surface emitting laser chips are electrically connected in series, parallel or series-parallel.
And the gold wire or the aluminum wire is used for electrically connecting the vertical cavity surface emitting laser chips, and finally the connection with the circuit on the substrate is realized.
In order to avoid welding falling possibly caused by stress on the electrode lead between the chip and the substrate circuit in the subsequent glue injection and baking process, an additional silicon wafer can be placed in a blank place of a substrate chip placement area, and the silicon wafer is used as a welding transition platform of the electrode lead.
3) Injecting glue, namely injecting the glue into the arrangement area of the vertical cavity surface emitting laser chip; the glue is silica gel glue (better acrylate) commonly used in the LED (light emitting diode) chip packaging technology; the glue has high light transmittance, and the shrinkage rate after curing is not too large so as to avoid damaging the electrical connection between the vertical cavity surface emitting laser chips.
4) Drying or baking, namely placing the substrate injected with the glue in an oven to cure the glue; the drying temperature and drying time of the glue with different characteristics can be different.
According to the electrical parameters, the number of chips and the electrical connection mode of a single chip in the integrated vertical cavity surface emitting laser chip, the rated working voltage and the rated working current of the integrated chip can be calculated.
The positive electrode and the negative electrode of the vertical cavity surface emitting laser chip integrated on the substrate are connected with an external direct current power supply, and the integrated chip can emit short-wave infrared light with the wavelength and the power density required by people.
The short-wave infrared integrated medical light source is used for a short-wave infrared integrated medical light source system of rehabilitation medical equipment, and is characterized by comprising a radiator, a short-wave infrared integrated medical light source, a cooling fan and a combined lens; the radiator is made of metal aluminum, copper or high-heat-conductivity ceramic; the combined lens is a parallel light lens (slightly expanding beam), and images of a vertical cavity surface emitting laser chip array in the short-wave infrared integrated medical light source are formed in front of a light source system; the physical size of the vertical cavity surface emitting laser chip array, the light power of the single chip, the interval between the single laser chips, the focal length of the combined lens group, the material and the light transmittance of the combined optical lens in the light source system have a synergistic effect, and the light power density at the position 15cm away from the front of the light outlet of the light source system is ensured to be less than 200mW/cm2；
Has the advantages that: the invention provides a method capable of meeting the requirements of the safety part 1 of laser products: the infrared medical equipment light source specified in the Equipment Classification, requirement (GB 7247.1-2012) adopts an available optical core, and the laser power density of an infrared band irradiated on a human body must be less than 200mW/cm2(the light outlet of the infrared medical device is generally kept 15 away from the light-receiving area of the patient during treatmentAbout cm). The invention can satisfy the light source of the infrared biological function of popular type even domestic type, the geometric distance between the chips on the packaging substrate and the distance of the chip array from the human body must be carefully designed. And laser chips with red wavelength are placed at some special positions of the vertical cavity surface emitting laser chip array for positioning.
The invention provides a short wave infrared integrated medical light source based on a low-power vertical cavity surface emitting laser chip, which is packaged by a certain process, and provides a short wave infrared integrated medical light source system of a vertical cavity surface emitting laser chip array for medical and household rehabilitation treatment equipment.
Compared with the currently used high-energy laser therapeutic apparatus (1064nm) applied to health care and rehabilitation, the short-wave infrared therapeutic equipment manufactured by the technology does not need special care of a doctor in the treatment process, and the cost is greatly reduced. Compared with the traditional far infrared health care rehabilitation treatment equipment, the short wave infrared treatment equipment manufactured by the technology has no risk of burning and scalding patients in the treatment process.
Drawings
FIG. 1 is a schematic view of a substrate for packaging a VCSEL IC.
FIG. 2 is a schematic diagram of a Vertical Cavity Surface Emitting Laser (VCSEL) unit device structure.
FIG. 3 is a schematic diagram of an array of integrated VCSEL chips.
FIG. 4 is a schematic diagram of an integrated VCSEL chip array optical path.
Fig. 5 is a schematic view of an integrated chip package structure for a short wave infrared medical light source.
Fig. 6 is a schematic structural diagram of a short wave infrared medical light source system.
Fig. 7 is a schematic structural diagram of a household short-wave infrared medical light source system.
Detailed Description
The present invention will be specifically described below with reference to specific examples.
The short-wave infrared integrated medical light source comprises the following components: the structure comprises a packaging substrate 1, a vertical cavity surface emitting laser chip 2 array, a substrate electrode 3, a substrate positioning hole 4, an upper electrode 3-1, an ohmic contact 3-2, a substrate 3-3, an active region 3-4 and a lower electrode 3-5; the lens assembly 6, the first lens 6-1, the second lens 6-2, the third lens 6-3, the chip 7, the heat sink 8, the heat dissipation fan 9, the lens barrel 10, the acrylic lens 12 (which may also be made of glass, etc.), and the semi-permeable membrane 11 (made of PET, etc.).
The schematic structure is shown in fig. 1-7.
The main body of the packaging substrate 1 is made of high-thermal-conductivity ceramic material, or an aluminum plate, or a copper plate; the substrate is covered with a high-strength heat-conducting insulating film material, a chip electrical connection circuit is prepared on the heat-conducting insulating film, the circuit is covered with an insulating film, and a positive electrode area 3 and a negative electrode area 3 of the connection circuit are reserved on the insulating film covered at the upper part. The central region of the substrate is the placement region of the array of vertical cavity surface emitting laser chips 2, or referred to as a light emitting region.
A Vertical Cavity Surface Emitting Laser (VCSEL) chip is mainly composed of three parts, and a schematic structural diagram is shown in fig. 2: the active region comprises an upper distributed Bragg reflector (P-DBR), an active region and a lower distributed Bragg reflector (N-DBR), wherein the active region material system is GaInAs/GaAs material. This optical core is available from Zhenjiang Rui Ji opto-electronic technology, Inc.
Example 1
The integrated VCSEL chip package structure of embodiment 1 is shown in FIG. 5.
The main material of the package substrate is red copper, which is similar to a common led (light emitting diode) package substrate. The light emitting area on the substrate (for mounting the vcsel ic array) is square with a side length of 22 mm.
The substrate comprises positive and negative electrodes 3 connected with an external direct current power supply, and further comprises a through hole 4 for fixing with an external radiator.
The light-emitting wavelength of the vertical cavity surface emitting laser chip 2 on the substrate is 940nm, the laser chip array is arranged in a square shape, and the side length is about 12 mm. In order to display the shape of the light spot, 4 vertical cavity surface emitting laser integrated chips 5 with the light emitting wavelength of 808nm are arranged at four corners of a square, and the total number of chips in an integrated chip array is 25.
The distances from the 4 edges of the chip array to the light-emitting area are all about 5 mm.
The connection mode among the chips in the chip array is that 5 chips in each row (or each column) are connected in series, then 5 chips in series are connected in parallel in the row (or the chip column) to form a 5-series and 5-parallel circuit (a hybrid circuit), and then the positive and negative electrodes of the hybrid circuit are respectively connected with the positive and negative electrodes reserved on the substrate.
A gold gasket is arranged between the single vertical cavity surface emitting laser chip and the substrate, and the gold gasket is used for contacting with a chip bottom electrode and leading out the bottom electrode, so that the welding is convenient. In addition, the gold pad also plays a role in heat conduction, so that heat generated when the vertical cavity surface emitting laser chip works is conducted to the copper substrate.
In order to avoid welding falling or lead fracture of electrode leads when the electrode leads encounter stress in the light-emitting region in the glue injection and drying processes, the electrode leads at two ends of each serial chip row (or column) are connected with the electrodes of the substrate in a platform transition connection mode of a silicon wafer 6.
The rated working voltage of a single 940nm vertical cavity surface emitting laser chip 2 is 1.9V, the rated current is 200mA, and the luminous power is 355 mW.
The rated working voltage of a single 808nm vertical cavity surface emitting laser chip is 1.9V, the current is 200mA, and the optical power is 98 mW.
The total working current of the integrated chip is 2000mA, and the voltage is 10V.
Example 2
Next, specific embodiment 2 will be described with reference to fig. 6.
The utility model relates to a short wave infrared integrated medical light source system for rehabilitation medical equipment.
In this embodiment, the integrated VCSEL chip light source is identical to the integrated light source of embodiment 1.
The light source system comprises a radiator, a fan for cooling the radiator, a lens barrel and a lens.
The radiator is made of metal aluminum, copper or high-heat-conductivity ceramic.
The fan is mounted on the heat sink to forcibly dissipate heat from the aluminum heat sink.
The substrate packaged with the integrated vertical cavity surface emitting laser chip is fixed with the radiator through the fixing through hole by a screw, and heat conducting glue is coated between the substrate and the radiator.
The lens barrel is of a cylindrical hollow structure, the length of the lens barrel is 61mm, the diameter of the lens barrel is 60mm, the wall thickness of the lens barrel is 1.5mm, and the bottom of the lens barrel is fixedly connected with a radiator through screws. A combined lens is arranged in the lens barrel; the focal length of the lens No. 1 is 130mm, and the focal lengths of the lens No. 2 and the lens No. 3 are 86mm respectively.
The lenses 1, 2 and 3 are aspheric optical glass lenses, quartz lenses or acrylic lenses.
The vertical distance of the center point of the lens 1 from the plane of the integrated chip is 145 mm.
The rated working current is provided for the integrated chip, and the measured optical power at the position 15cm away from the light outlet is 168mW/cm2。
Example 3
Next, specific embodiment 3 will be described with reference to fig. 7.
The utility example relates to a household short wave infrared integrated medical light source system for rehabilitation medical equipment.
This example differs from example 1 in that the total number of chips was 36, including 32 chips of 940nm and 4 chips of 808 nm.
The package of the integrated chip adopts a 12-string and 3-parallel circuit connection mode, the rated current is 1200mA, and the voltage is 22-24V.
This embodiment is different from embodiment 2 in that a combination lens is not provided in a lens barrel. The bottom of the lens barrel is connected with an aluminum radiator, a transparent window is arranged at the top (light outlet) of the lens barrel and made of acrylic, and the thickness of the acrylic wafer is 2 mm. In order to make the emergent light more uniform, the inner surface of the acrylic wafer is covered with a layer of semitransparent PET film with the thickness of 30 um. In addition, the acrylic transparent sheet also plays a role in protecting the laser chip.
At the exit port, the power density of the emergent light is 193mW/cm2At a position 15cm away from the light outlet, the power of the emergent light is 170mW/cm2。
Under the condition that no special technician operates at home, even if a patient does not make the light receiving part of the patient leave the light outlet 15cm according to the requirements of the specification but directly approach the light outlet, the medical light source can not cause accidental injury to the patient.
Claims (5)
1. The utility model provides an infrared integrated medical light source of shortwave, characterized by, medical light source includes following part: the packaging structure comprises a packaging substrate, a vertical cavity surface emitting laser chip, a substrate electrode and a substrate positioning hole; the packaging substrate is made of a high-thermal-conductivity ceramic material, an aluminum plate or a copper plate; the substrate is covered with a high-strength heat-conducting insulating film material, a chip electrical connection circuit is prepared on the heat-conducting insulating film, and the circuit is covered with a high-strength insulating film; reserving positive and negative electrode regions of a connecting circuit on an insulating film covered on the upper part of the substrate; the central area of the substrate is a placement area of the vertical cavity surface emitting laser chip;
the vertical cavity surface emitting laser chip comprises the following three parts: an upper distributed Bragg reflector (P-DBR), an active region, and a lower distributed Bragg reflector (N-DBR); the active region material system is GaInAs/GaAs material; the light-emitting mode of the vertical cavity surface emitting laser array adopts an ejecting mode, the emitted laser beam is in a circular light spot, and the outer edge of the light beam and the perpendicular bisector of the chip form about 12 +/-3oAngle, the central wavelength of the light emitted by the chip is about 940 nm; the optical power range of a single vertical cavity surface emitting laser chip is 0.1-1W;
the laser chip is an array comprising a plurality of vertical cavity surface emitting laser chips, and is an integrated laser chip; the multiple vertical cavity surface emitting laser chips are arranged into a square outline, a rectangular outline or a similar circular outline in a chip packaging area of the substrate; the irradiation area or light spot of the emergent light of the chip array is consistent with the outline of the package on the substrate; the size of the light spot is related to the vertical distance between the irradiation area and the chip, and the farther the distance is, the larger the light spot is;
a laser chip with red wavelength is placed in the vertical cavity surface emitting laser chip array; the red laser chip is placed at the four corners of a square or rectangular array or at the ends of two mutually perpendicular diameters of a central or circular array;
the connection mode among the chips in the vertical cavity surface emitting laser chip array is that 3-8 chips in each row or each column are connected in series, 3-8 chips in series are connected in parallel in rows or columns to form n series-m parallel circuits, namely a hybrid circuit, and then the positive and negative electrodes of the hybrid circuit are respectively connected with the positive and negative electrodes reserved on the substrate; a gold gasket is arranged between the single vertical cavity surface emitting laser chip and the substrate, the gold gasket is used for contacting with the chip bottom electrode and leading out the bottom electrode, and the connection between the electrode leads at two ends of each serial chip row or column and the substrate electrode adopts a silicon wafer platform transitional connection mode.
2. The short wave infrared integrated medical light source of claim 1, wherein the packaging employs the steps of:
1) fixing the crystal, namely fixing the vertical cavity surface emitting laser chip in a chip mounting area in the center of the substrate according to a designed array pattern; the vertical cavity surface emitting laser chip arrays are arranged in a square, rectangular or round-like shape; a metal gasket with good heat conduction and electric conductivity is arranged between the vertical cavity surface emitting laser chip and the substrate as middle contact, and a bottom electrode is led out by the metal gasket; the metal gasket is a gold sheet or an aluminum sheet;
2) the bonding wires are used for realizing the electrical connection between the vertical cavity surface emitting laser chips in a serial, parallel or series-parallel mode; the electrode leads between the chips and the substrate circuit are gold wires or aluminum wires; placing an additional silicon wafer in a blank place of a chip placement area on the substrate, and taking the silicon wafer as a welding transition platform of an electrode lead;
3) injecting glue, namely injecting glue into the arrangement area of the vertical cavity surface emitting laser chip on the substrate; the glue has high light transmittance;
4) and (5) curing, drying and curing the substrate injected with the glue.
3. A short wave infrared integrated medical light source system for rehabilitation medical equipment of short wave infrared integrated medical light source according to any of claims 1-2, characterized by comprising a radiator, a short wave infrared integrated medical light source, a cooling fan, a combined lens; the radiator is made of metal aluminum, copper or high heat conduction ceramic; the combined lens is a parallel light lens slightly expanding beams, and images of a vertical cavity surface emitting laser chip array in the short-wave infrared integrated medical light source are formed in front of a light source system; the physical size of the vertical cavity surface emitting laser chip array, the light power of the single chip, the interval between the single laser chips, the focal length of the combined lens group, the material and the light transmittance of the combined optical lens in the light source system have a synergistic effect, and the light power density at the position 15cm away from the front of the light outlet of the light source system is ensured to be less than 200mW/cm2。
4. A short wave infrared integrated medical light source system for rehabilitation medical equipment of short wave infrared integrated medical light source according to any of claims 1-2, characterized by comprising a radiator, a short wave infrared integrated medical light source, a cooling fan, a light emitting tube; the radiator is made of metal aluminum, copper or high-heat-conductivity ceramic; the light outlet cylinder guides the short-wave infrared light emitted by the vertical cavity surface emitting laser chip array in the short-wave infrared integrated medical light source to the front of a light source system; a transparent window sheet is arranged at a light outlet at the top of the light outlet cylinder, the window sheet is made of acrylic, glass or quartz, and the thickness of the window sheet is 0.5-3 mm; covering a layer of semitransparent PET film on the inner surface of the transparent window sheet, wherein the thickness of the PET film is 20-100 um; the physical dimension of the vertical cavity surface emitting laser chip array in the light source system, the optical power of the single chips, the interval between the single chips, the transparent window sheet of the light outlet tube and the light transmittance of the PET film have synergistic effect, so that the light outlet of the light source system is ensuredThe optical power density at the opening is less than 200mW/cm2。
5. The short wave infrared integrated medical light source system for medical rehabilitation equipment as claimed in any one of claims 3-4, wherein the rated operating voltage of a single 940nm vertical cavity surface emitting laser chip is 1.9V, the rated current is 200mA, and the luminous power is 355 mW.
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