CN101442071A - Gallium nitride based field effect transistor and preparation method thereof - Google Patents
Gallium nitride based field effect transistor and preparation method thereof Download PDFInfo
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- CN101442071A CN101442071A CNA2008102402704A CN200810240270A CN101442071A CN 101442071 A CN101442071 A CN 101442071A CN A2008102402704 A CNA2008102402704 A CN A2008102402704A CN 200810240270 A CN200810240270 A CN 200810240270A CN 101442071 A CN101442071 A CN 101442071A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 43
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 238000002353 field-effect transistor method Methods 0.000 title description 4
- 230000005669 field effect Effects 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000007747 plating Methods 0.000 claims abstract description 40
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010931 gold Substances 0.000 claims abstract description 36
- 239000010936 titanium Substances 0.000 claims abstract description 32
- 229910052737 gold Inorganic materials 0.000 claims abstract description 29
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 22
- 239000010937 tungsten Substances 0.000 claims abstract description 22
- 238000005498 polishing Methods 0.000 claims abstract description 18
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 8
- 239000010980 sapphire Substances 0.000 claims abstract description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 31
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 15
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000010297 mechanical methods and process Methods 0.000 claims description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000010002 mechanical finishing Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
The invention relates to a gallium nitride-based field effect transistor and a preparation method thereof. The field effect transistor comprises a front-surface tube core, a substrate and a back gold structure, wherein the substrate comprises a silicon carbide substrate or a sapphire substrate, the back gold structure is arranged on the bottom surface of the substrate and comprises a back gold plating layer and an electroplated layer, the back gold plating layer is a composite metal layer consisting of a titanium metal layer, a tungsten metal layer and a gold metal layer, and the titanium metal layer is in contact with the substrate. The invention adopts sodium hydroxide polishing solution to carry out chemical mechanical polishing on the substrate of the field effect transistor, adopts a method of sputtering titanium/tungsten/gold composite layer metal to form a back-gold plating layer, utilizes the good barrier property of tungsten, and effectively prevents gold-tin alloy or gold-tin solder from permeating into the substrate under the high-temperature condition by a titanium/tungsten/gold system, thereby effectively enhancing the adhesion of the back-gold structure on a silicon carbide substrate or a sapphire substrate.
Description
Technical field
The present invention relates to a kind of field effect transistor of technical field of semiconductors, particularly relate to a kind of GaN base field effect tube and preparation method thereof with novel back of the body gold structure.
Background technology
Gallium nitride (GaN) is as third generation semiconductor material with wide forbidden band, with its energy gap big (3.4eV), puncture voltage height (3.3MV/cm), two-dimensional electron gas height (〉 10
13Cm2), saturated electrons speed big (2.8 * 10
7Cm/s) etc. characteristic is subjected to extensive concern in the world.At present, the high frequency of AlGaN/GaN HEMT device, high pressure, high temperature and high-power characteristic make it that huge prospect is arranged aspect microwave power device.
Though the performance of aluminum-gallium-nitrogen/gallium nitride (AlGaN/GaN) HEMT power device (High Electron Mobility Transistor) has obtained considerable progress in recent years, especially aspect high-frequency high-power, but still have a lot of problems not solve, the heat radiation of high power device and problem with grounding are perplexing AlGaN/GaNHEMT practicability and industrialization process always.Back of the body technology for gold is present AlGaN/GaN HEMT a kind of heat dissipating method commonly used.
The AlGaN/GaN HEMT power device that adopts conventional back of the body technology for gold to make, common processing step is:
Step 1, making AlGaN/GaN HEMT tube core are finished device;
Step 2, even glue protection front tube core, bonding die adopts physical mechanical finishing method attenuate, polishing;
Step 3, employing back side photoetching technique are carried out photoetching, form the golden figure of the back of the body at AlGaN/GaN HEMT tube core correspondence position;
Step 4, sputtered titanium/gold (Ti/Au) composite bed metal form the golden furling plating of the back of the body;
Step 5, utilize optical lithography techniques to carry out photoetching, form at AlGaN/GaN HEMT tube core correspondence position and electroplate figure;
Step 6, electrogilding (Au) are peeled off and are formed the golden structure of the back of the body;
Step 7, scribing are separated into single AlGaN/GaN HEMT tube core;
Step 8, bonding die, encapsulation.
Utilize gold-tin alloy in the practice,, the power device tube core fixed sealing of single separation is contained in the shell through 300 degree high temperature bonding dies; Perhaps utilize golden tin solder,, the power device tube core of single separation is fixed on carries out interior coupling on the pcb board through 400 degree high temperature bonding dies.
The inventor finds that in practice there is following defective in prior art, under 300 degree hot conditionss, gold-tin alloy or golden tin solder be inwardly diffusion easily, enter titanium/golden furling plating, thereby influence the adhesiveness of electrodeposited coating structure, cause carrying on the back gold layer structure and come off from AlGaN/GaN HEMT tube core easily, thereby the practical reliability of device is reduced.
This shows that above-mentioned existing field effect transistor and preparation method thereof obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.The inventor is based on being engaged in practical experience and the professional knowledge that this type of product design is made, actively studied innovation, in the hope of founding a kind of new field effect transistor and preparation method thereof, can improve general existing field effect transistor and preparation method thereof, make it have more practicality.
Summary of the invention
Main purpose of the present invention is, overcome existing GaN base field effect tube and carry on the back the defective that golden structure and preparation method thereof exists, and a kind of GaN base field effect tube with novel back of the body gold structure and preparation method thereof is provided, technical problem to be solved is to stop golden tin solder or gold-tin alloy to permeate to the contact-making surface of furling plating and substrate, strengthen the adhesiveness of golden structure of the back of the body and field effect tube core substrate, thereby improve the reliability of field effect transistor.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of GaN base field effect tube according to the present invention's proposition, comprise front tube core, substrate and back of the body gold structure, the golden structure of the described back of the body is arranged on the substrate bottom surface, this is carried on the back golden structure and comprises golden furling plating of the back of the body and electrodeposited coating, the golden furling plating of the described back of the body is the complex metal layer that is made of titanium coating, tungsten metal level and gold metal layer, and described titanium coating contacts with described substrate.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.Preferably, aforesaid field effect transistor, the thickness of wherein said titanium coating is 10-20nm, and the tungsten metal layer thickness is 35-60nm, and the thickness of gold metal layer is 60-100nm.
Preferably, aforesaid field effect transistor, the material of wherein said electrodeposited coating are metallic gold.
Preferably, aforesaid field effect transistor, wherein said substrate is carborundum or sapphire.
Preferably, aforesaid field effect transistor, wherein said tube core comprises: gallium nitride layer is arranged on described substrate end face; The gallium aluminium nitrogen layer is arranged on the described gallium nitride layer; And grid, source electrode and drain electrode, being arranged on the gallium aluminium nitrogen layer, described source electrode and drain electrode are positioned at described grid both sides.
Preferably, aforesaid field effect transistor, the thickness of wherein said substrate is 100-200nm.
Preferably, aforesaid field effect transistor, wherein said thickness of plating layer are 2-4 μ m.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.The preparation method of a kind of field effect transistor that proposes according to the present invention may further comprise the steps:
Step 1: the substrate to field effect transistor carries out attenuate and polishing;
Step 2: adopt photoetching process to form the golden figure of the back of the body at the substrate back of described field effect transistor tube core correspondence;
Step 3:, form titanium/tungsten/golden complex metal layer as furling plating at described substrate back by sputtering method;
Step 4:, on above-mentioned complex metal layer, form electrodeposited coating by galvanoplastic.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The preparation method of aforesaid field effect transistor, the roughness of the substrate that wherein said process step 1 obtains is lower than ± 20nm.
The preparation method of aforesaid field effect transistor, wherein said step 1 comprises: at first adopt the physical mechanical method that substrate is carried out attenuate and polishing, as polishing fluid substrate is carried out chemico-mechanical polishing with sodium hydroxide solution then.
The preparation method of aforesaid field effect transistor, the pH value of wherein said sodium hydroxide solution is 7.5-11.
The preparation method of aforesaid field effect transistor, the described titanium/tungsten of wherein said step 3/golden complex metal layer comprises: thickness is the titanium coating of 10-20nm, and thickness is the tungsten metal level of 35-60nm, and thickness is the gold metal layer of 60-100nm.
The preparation method of aforesaid field effect transistor forms one earlier and electroplates figure, and then carry out step 4 on the complex metal layer that therein described step 3 obtains.
The preparation method of aforesaid field effect transistor, wherein said plating figure is identical with described furling plating figure, forms the golden structure of the back of the body jointly by furling plating and electrodeposited coating.。
The preparation method of aforesaid field effect transistor, wherein said field effect transistor comprises:
Substrate;
Gallium nitride layer is arranged on described substrate end face;
The gallium aluminium nitrogen layer is arranged on the described gallium nitride layer; And
Grid, source electrode and drain electrode are arranged on the gallium aluminium nitrogen layer, and described source electrode and drain electrode are positioned at described grid both sides.
The preparation method of aforesaid field effect transistor, before described step 1 to the front resist coating of field effect transistor; After step 4, utilize acetone that the furling plating and the electrodeposited coating metal of no graphics field are peeled off.
The preparation method of aforesaid field effect transistor, it also comprises: adopt golden tin solder to carry out bonding die and encapsulation step.
Via as can be known above-mentioned, the invention discloses a kind of GaN base field effect tube and preparation method thereof with novel back of the body gold structure, comprise and adopt NaOH (NaOH) polishing fluid, utilize chemico-mechanical polishing that the substrate of GaN base field-effect tube is carried out attenuate and polishing; Adopt the method for method sputtered titanium/tungsten/gold (Ti/W/Au) composite bed metal of sputter to form the golden furling plating of the back of the body, adopt the electric plating method electrogilding to form the back of the body gold structure of whole GaN base field effect tube.
By technique scheme, field effect transistor of the present invention and preparation method thereof has following advantage at least:
1, GaN base field effect tube provided by the invention, adopt titanium/tungsten/gold as furling plating, in the process of bonding die encapsulation, titanium/tungsten/golden system has stopped effectively that in the high-temperature baking process golden tin solder or gold-tin alloy to the infiltration of substrate, have strengthened and carried on the back the adhesiveness of golden structure in silicon carbide substrates or Sapphire Substrate.
2, the preparation method of GaN base field effect tube provided by the invention, utilize the NaOH polishing fluid, adopt the method for chemico-mechanical polishing that substrate is polished, improve the evenness of silicon carbide substrates or Sapphire Substrate, make substrate roughness reach＜± 20nm, reduced dust effectively in the adhering to of substrate, improved and carry on the back the adhesiveness of golden structure in silicon carbide substrates or Sapphire Substrate.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is a field effect transistor tube core cross-sectional view of the present invention.
Fig. 2 is the generalized section of making GaN base field-effect tube provided by the invention.
Fig. 3 is the flow chart of making GaN base field-effect tube provided by the invention.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the field effect transistor that foundation the present invention is proposed and preparation method thereof its embodiment, structure, feature and effect thereof, describe in detail as after.
As depicted in figs. 1 and 2, Fig. 1 for the present invention based on the structural representation of GaN base field-effect tube tube core, the generalized section of Fig. 2 base field-effect tube.This field effect transistor comprises tube core, substrate 100 and carries on the back golden structure.Described tube core comprises: the gallium nitride layer 101 that is arranged on described substrate 100 end faces; Be arranged on the gallium aluminium nitrogen layer 102 on the described gallium nitride layer 101; And be arranged on grid 104, the source electrode 103 on the gallium aluminium nitrogen layer 102 and drain 105, described source electrode and drain electrode are positioned at described grid both sides.Source electrode 103 and gallium aluminium nitrogen layer 102 and drain 105 and gallium aluminium nitrogen layer 102 between form ohmic contact by annealed alloy, grid 104 is formed on the gallium aluminium nitrogen layer 102 by evaporated metal.Described substrate is carborundum or sapphire, and the thickness of substrate is 100-200nm, and the roughness of substrate is ± 20nm.The golden structure of the described back of the body is arranged on substrate 100 bottom surfaces, and this is carried on the back golden structure and comprises golden furling plating of the back of the body and electrodeposited coating 140.The golden furling plating of the described back of the body is the complex metal layer that is made of titanium coating 110, tungsten metal level 120 and gold metal layer 130, and described titanium coating 110 directly contacts with described substrate 100.Electrodeposited coating 140 is arranged on the above-mentioned gold metal layer 130.The thickness of above-mentioned titanium coating 110 is 10-20nm, and the thickness of tungsten metal level 120 is 35-60nm, and the thickness of gold metal layer 130 is 60-100nm.The material of described electrodeposited coating is a metallic gold, and thickness of plating layer is 2-4 μ m.The golden furling plating of the described back of the body is to form by sputtered titanium/tungsten/gold (Ti/W/Au) metal, and described electrodeposited coating is the method formation by electrogilding on the golden furling plating metal of the back of the body.
Based on the structure of the above-mentioned GaN base field effect tube that provides of the present invention, Fig. 3 shows field effect transistor provided by the invention and makes flow chart, and this method comprises the steps:
Step S1, making AlGaN/GaN HEMT (aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility) tube core; Tube core structure as shown in Figure 1, this tube core comprises: the gallium nitride layer that is arranged on described substrate end face; Be arranged on the gallium aluminium nitrogen layer on the described gallium nitride layer; And being arranged on grid, source electrode and drain electrode on the gallium aluminium nitrogen layer, described source electrode and drain electrode are positioned at described grid both sides.
Step S2, employing positive photoresist 9918 apply the front tube cores, and it is protected, and the thickness of photoresist is 4um; And the mode bonding die that adopts back-off to adhere to.
Step S3, adopt physical mechanical method that substrate is carried out attenuate, with the reduced thickness of tube core to 150um, then with the pH value be the sodium hydroxide solution of 7.5-11 as polishing fluid, substrate is carried out chemico-mechanical polishing, the roughness of substrate is lower than ± 20nm;
Step S4, employing back side optical lithography techniques are carried out photoetching, form the golden figure of the back of the body in the substrate bottom surface of AlGaN/GaN HEMT tube core.
Step S5, utilize magnetically controlled sputter method to form the golden furling plating of the back of the body at substrate bottom surface sputtered titanium/tungsten/gold (Ti/W/Au) composite bed metal, the thickness of control titanium/tungsten/three kinds of metals of gold is 10-20nm, 35-60nm and 60-100nm, preferable, the thickness of described Ti/W/Au is 20nm/50nm/80nm.This furling plating has and the identical furling plating figure of above-mentioned back of the body gold figure.
Step S6, utilize optical lithography techniques to carry out photoetching to carrying on the back golden furling plating, figure is electroplated in corresponding formation with the golden figure of the aforesaid back of the body; Described plating figure is identical with described furling plating figure.
Step S7, on the golden furling plating of the back of the body electrogilding (Au), form the electrodeposited coating of 2.5-4 μ m, described furling plating and electrodeposited coating form the golden structure of the back of the body jointly, preferred thickness of plating layer is 3 μ m;
Step S8, utilize acetone that the furling plating and the electrodeposited coating metal of no graphics field are peeled off, form the GaN base field effect tube of the novel back of the body gold of the tool structure of present embodiment; Adopt golden tin solder front bonding die, encapsulation.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (17)
1, a kind of GaN base field effect tube comprises front tube core, substrate and back of the body gold structure, and described back of the body gold structure is arranged on the substrate bottom surface, and this is carried on the back golden structure and comprises golden furling plating of the back of the body and electrodeposited coating, it is characterized in that:
The golden furling plating of the described back of the body is the complex metal layer that is made of titanium coating, tungsten metal level and gold metal layer, and described titanium coating contacts with described substrate.
2, field effect transistor according to claim 1 is characterized in that, the thickness of wherein said titanium coating is 10-20nm, and the tungsten metal layer thickness is 35-60nm, and the thickness of gold metal layer is 60-100nm.
3, field effect transistor according to claim 1 is characterized in that, the material of described electrodeposited coating is a metallic gold.
4, field effect transistor according to claim 1 is characterized in that, described substrate is carborundum or sapphire.
5, field effect transistor according to claim 1 is characterized in that, described front tube core comprises:
Gallium nitride layer is arranged on described substrate end face;
The gallium aluminium nitrogen layer is arranged on the described gallium nitride layer; And
Grid, source electrode and drain electrode are arranged on the gallium aluminium nitrogen layer, and described source electrode and drain electrode are positioned at described grid both sides.
According to each described field effect transistor of claim 1-5, it is characterized in that 6, the thickness of described substrate is 100-200nm.
7,, it is characterized in that wherein said thickness of plating layer is 2-4 μ m according to claim 1 or 3 described field effect transistor.
8, a kind of preparation method of field effect transistor is characterized in that may further comprise the steps:
Step 1: the substrate to field effect transistor carries out attenuate and polishing;
Step 2: adopt photoetching process to form the golden figure of the back of the body at the substrate back of described field effect transistor tube core correspondence;
Step 3:, form titanium/tungsten/golden complex metal layer as furling plating at described substrate back by sputtering method;
Step 4:, on above-mentioned complex metal layer, form electrodeposited coating by galvanoplastic.
9, the preparation method of field effect transistor according to claim 8 is characterized in that, the roughness of the substrate that process step 1 obtains is lower than ± 20nm.
10, the preparation method of field effect transistor according to claim 8, it is characterized in that, described step 1 comprises: at first adopt the physical mechanical method that substrate is carried out attenuate and polishing, as polishing fluid substrate is carried out chemico-mechanical polishing with sodium hydroxide solution then.
11, the preparation method of field effect transistor according to claim 10 is characterized in that the pH value of wherein said sodium hydroxide solution is 7.5-11.
12, the preparation method of field effect transistor according to claim 8, it is characterized in that the described titanium/tungsten of step 3/golden complex metal layer comprises: thickness is the titanium coating of 10-20nm, thickness is the tungsten metal level of 35-60nm, and thickness is the gold metal layer of 60-100nm.
13, the preparation method of field effect transistor according to claim 8 is characterized in that, forms one earlier and electroplate figure on the complex metal layer that step 3 obtains, and then carry out step 4.
14, the preparation method of field effect transistor according to claim 13 is characterized in that, described plating figure is identical with described furling plating figure, forms the golden structure of the back of the body jointly by furling plating and electrodeposited coating.
15, the preparation method of field effect transistor according to claim 8 is characterized in that described field effect transistor tube core comprises:
Gallium nitride layer is arranged on described substrate end face;
The gallium aluminium nitrogen layer is arranged on the described gallium nitride layer; And
Grid, source electrode and drain electrode are arranged on the gallium aluminium nitrogen layer, and described source electrode and drain electrode are positioned at described grid both sides.
16, according to Claim 8 the preparation method of each described field effect transistor is characterized in that-15, before described step 1 to the front resist coating of field effect transistor; After step 4, utilize acetone that the furling plating and the electrodeposited coating metal of no graphics field are peeled off.
17, the preparation method of field effect transistor according to claim 16 is characterized in that, also comprises: adopt golden tin solder to carry out bonding die and encapsulation step.
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| CN102237339B (en) * | 2010-04-28 | 2013-07-03 | 中国科学院微电子研究所 | Chip back metal plating layer structure and preparation method thereof |
| CN102623336A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Method for manufacturing gallium arsenide-based microwave monolithic integrated circuit power device |
| CN102623336B (en) * | 2011-01-27 | 2014-09-17 | 中国科学院微电子研究所 | Method for manufacturing gallium arsenide-based microwave monolithic integrated circuit power device |
| CN105470131A (en) * | 2015-12-30 | 2016-04-06 | 东莞市青麦田数码科技有限公司 | Method for fabricating back hole of gallium arsenide-based HEMT device |
| CN107369617A (en) * | 2017-07-06 | 2017-11-21 | 西安交通大学 | A kind of SiC high temperature ohmic contacts electrode and preparation method thereof |
| CN109037035A (en) * | 2018-07-31 | 2018-12-18 | 成都海威华芯科技有限公司 | A kind of method and system for improving SiC base GaN wafer and carrying on the back golden adhesiveness |
| CN109830456A (en) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | The preparation method of method and power device that the back metal of power device thickeies |
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