CN101424887A - Semiconductor wafer metal substrate web corrosion prevention liquid and its use method - Google Patents
Semiconductor wafer metal substrate web corrosion prevention liquid and its use method Download PDFInfo
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- CN101424887A CN101424887A CNA2007100477909A CN200710047790A CN101424887A CN 101424887 A CN101424887 A CN 101424887A CN A2007100477909 A CNA2007100477909 A CN A2007100477909A CN 200710047790 A CN200710047790 A CN 200710047790A CN 101424887 A CN101424887 A CN 101424887A
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- Prior art keywords
- multipolymer
- metal substrate
- semiconductor chip
- corrosion inhibitor
- chip metal
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 74
- 239000002184 metal Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 title claims description 45
- 238000005536 corrosion prevention Methods 0.000 title abstract 5
- 238000005260 corrosion Methods 0.000 claims abstract description 74
- 230000007797 corrosion Effects 0.000 claims abstract description 74
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 239000000178 monomer Substances 0.000 claims description 53
- 239000003112 inhibitor Substances 0.000 claims description 45
- 238000004140 cleaning Methods 0.000 claims description 44
- 239000012530 fluid Substances 0.000 claims description 27
- 239000004411 aluminium Substances 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 22
- -1 acrylic ester Chemical class 0.000 claims description 18
- 239000000049 pigment Substances 0.000 claims description 14
- 229920001897 terpolymer Polymers 0.000 claims description 14
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 13
- 229920002554 vinyl polymer Polymers 0.000 claims description 13
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 12
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 11
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 claims description 10
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 9
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 9
- 239000011976 maleic acid Substances 0.000 claims description 9
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 9
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 8
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 8
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 6
- 229920001519 homopolymer Polymers 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229920000058 polyacrylate Polymers 0.000 claims description 5
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 claims description 4
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 4
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical class CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 4
- 150000003863 ammonium salts Chemical class 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 4
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 claims description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 2
- 229910018594 Si-Cu Inorganic materials 0.000 claims description 2
- 229910008465 Si—Cu Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 claims description 2
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract 3
- 239000003973 paint Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 14
- 239000008367 deionised water Substances 0.000 description 12
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/173—Macromolecular compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a semiconductor wafer metal base material corrosion prevention liquid which contains carboxyl polymer, polymer containing paint affinity groups and water. The invention also discloses a using method of the semiconductor wafer metal base material corrosion prevention liquid: after washing liquid is utilized to remove residual on a semiconductor wafer after etched or etched/incinerated, the semiconductor wafer metal base material corrosion prevention liquid is directly utilized to wash a semiconductor wafer, and then the semiconductor wafer is dried. The semiconductor wafer metal base material corrosion prevention liquid has lower corrosion velocity to metal (especially aluminum), and has the advantages of environment protection and low cost as well as convenient use and obvious effect, and has better application foreground in the micro-electronics field of metal washing and semiconductor washing, and the like.
Description
Technical field
The present invention relates to a kind of cleaning fluid and using method thereof in the semiconductor manufacturing cleaning, be specifically related to a kind of corrosion inhibitor for semiconductor chip metal substrate and using method thereof.
Background technology
In the semiconductor components and devices manufacture process, the coating of photoresist layer, exposure and imaging are necessary process steps to the pattern manufacturing of components and parts.Before last (promptly after coating, imaging, ion implantation and the etching at photoresist layer) of patterning carried out next processing step, the residue of photoresist layer material need thoroughly be removed.Can sclerosis photoresist layer polymkeric substance in doping step intermediate ion bombardment, thus therefore making photoresist layer become to be difficult for dissolving more is difficult to remove.So far the general two-step approach (dry ashing and wet etching) of using is removed this layer photoresistance tunic in semi-conductor industry.The first step utilizes dry ashing to remove the major part of photoresist layer (PR).Second step utilized composite corrosion inhibitor wet etching/cleaning to remove remaining photoresist layer, and its concrete steps are generally cleaning fluid cleaning/rinsing/rinsed with deionized water.In this process, can only remove residual polymkeric substance photoresist layer and inorganics, and can not attack infringement metal level (as aluminium lamination).
In present wet clean process, the cleaning fluid of using morely is to contain the cleaning fluid of azanol class and the cleaning fluid of fluoride.In addition, also has a spot of not fluorine-containing again cleaning fluid of azanol that neither contains.The cleaning fluid of azanol class after having cleaned the plasma etching thing, often adopts the solvent rinsing because it is bigger to the corrosion rate of metallic aluminium during rinsing in water.Used solvent mainly contains isopropyl alcohol and N-Methyl pyrrolidone.The former progressively is eliminated in some semiconductor manufacturing companies because flash-point is lower, volatile; And the latter since flash-point use in good multiple semiconductor manufacturing company than higher, not volatile always.But along with environmental consciousness and cost pressure, increasing company wishes can be with the direct rinsing of deionized water, and does not cause corrosion of metal.For fluorine-containing cleaning fluid, with the direct rinsing of deionized water the time, its rate of metal corrosion exists one to have high to a low curve (showing as Fig. 1) from low to high again.
In order to reduce the corrosion of rinsing to metal base, often in the process of reality adopt a large amount of quick rinsings of water so that with fast speeds and short time by the bigger zone of corrosion rate, to reduce corrosion of metal.And this often brings the too small problem of rinse cycle action pane.
Summary of the invention
Technical matters to be solved by this invention is in order to solve the metal erosion problem in the wet-cleaned rinse step, and provide a kind of lower rate of metal corrosion that has, environmentally friendly simultaneously, low price and corrosion inhibitor for semiconductor chip metal substrate and using method thereof easy to use.
Corrosion inhibitor for semiconductor chip metal substrate of the present invention contains: carbonyl bearing polymer, the polymkeric substance that contains the pigment affinity groups and water.
Among the present invention, described metal base especially refers to aluminium, as is applied to the aluminium alloys such as standard aluminum, Al-Si-Cu alloy or aluminium copper of semiconductor technology.
Among the present invention, described carbonyl bearing polymer is preferable is selected from carboxylic homopolymer, carboxylic homopolymer salt, carboxylic multipolymer and the carboxylic copolymer salt one or more.
Wherein, described carboxylic homopolymer is preferable is in HPMA (HPMA), polyacrylic acid (PAA) and the polymethylacrylic acid one or more, and better is HPMA and/or polyacrylic acid.
Wherein, described carboxylic multipolymer preferable for the multipolymer that contains the multipolymer (as the multipolymer of acrylic acid and maleic acid and/or the multipolymer of methacrylic acid and maleic acid) and/or the vinyl-containing monomers of carboxylic monomer and contain carboxylic monomer (as styrene and acrylic acid multipolymer, the multipolymer of styrene and maleic acid, the multipolymer of vinyl cyanide and maleic acid, ethene and acrylic acid multipolymer, vinyl cyanide and acrylic acid multipolymer, the multipolymer of styrene and methacrylic acid, in the multipolymer of the multipolymer of ethene and methacrylic acid and vinyl cyanide and methacrylic acid one or more).Wherein, the multipolymer of preferred acrylic acid and maleic acid.
Wherein, described salt is one or more in ammonium salt, sylvite and the sodium salt; Preferred ammonium salt is as ammonium polyacrylate (SD).
Among the present invention, so long as existing carboxylic polymkeric substance all can be used for corrosion inhibitor for semiconductor chip metal substrate of the present invention in the prior art, prerequisite is that this polymkeric substance has certain solubleness in water.Generally speaking, carboxylic polymer molecular weight size does not influence and realizes purpose of the present invention.If the polymkeric substance that has certain mass concentration in the corrosion inhibitor for semiconductor chip metal substrate of the present invention also correspondingly has certain density carboxyl in this corrosion inhibitor for semiconductor chip metal substrate.This is because for the polymkeric substance of certain mass concentration, if the molecular weight of polymkeric substance is big, the molal quantity of polymkeric substance is just correspondingly few in the corrosion inhibitor for semiconductor chip metal substrate; If the molecular weight of polymkeric substance is little, the molal quantity of polymkeric substance is also just correspondingly many in the corrosion inhibitor for semiconductor chip metal substrate.That is to say, form certain polymkeric substance, also just correspondingly contain certain density carboxyl on the polymkeric substance of its certain mass concentration.No matter the molecular weight size of this polymkeric substance is as long as the carboxyl on this polymkeric substance reaches certain concentration in slow-releasing agent system.In the corrosion inhibitor for semiconductor chip metal substrate of the present invention, the content of described carbonyl bearing polymer is preferably mass percent 0.0001～3%.
Among the present invention, what described pigment affinity groups was preferable is hydroxyl or amino.As everyone knows, carboxyl also is a kind of pigment affinity groups, but what is called contains in the pigment affinity groups polymkeric substance and can contain carboxyl in the present invention, also can not contain carboxyl.Among the present invention, the molecular weight of the polymkeric substance that contains the pigment affinity groups is had no special requirements.
Among the present invention, the described polymkeric substance that contains the pigment affinity groups preferable for containing the polyacrylate polymers of pigment affinity groups, the multipolymer of preferred hydroxy-ethyl acrylate and acrylamide, the multipolymer of acrylic ester monomer and hydroxy-ethyl acrylate class monomer, the multipolymer of acrylic ester monomer and hydroxyethyl methylacrylate class monomer, the multipolymer of acrylic ester monomer and acrylamide monomers, acrylic ester monomer, the terpolymer of hydroxy-ethyl acrylate class monomer and vinyl-containing monomers, acrylic ester monomer, the terpolymer of hydroxyethyl methylacrylate class monomer and vinyl-containing monomers, and acrylic ester monomer, in the terpolymer of acrylamide monomers and vinyl-containing monomers one or more.
Wherein, the preferred methyl acrylate of terpolymer, hydroxy-ethyl acrylate and the cinnamic terpolymer of described acrylic ester monomer, hydroxy-ethyl acrylate class monomer and vinyl-containing monomers; The preferred butyl acrylate of the terpolymer of described acrylic ester monomer, acrylamide monomers and vinyl-containing monomers, acrylamide and acrylic acid terpolymer.
What wherein, described acrylic ester monomer was preferable is methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, Jia Jibingxisuanyizhi, propyl methacrylate or butyl methacrylate.
Among the present invention, the content of the described polymkeric substance that contains the pigment affinity groups is preferable is mass percent 0.0001～3%.
Agents useful for same of the present invention and raw material are all commercially available to be got.Corrosion inhibitor for semiconductor chip metal substrate of the present invention can be made by the simple evenly mixing of mentioned component.
The invention still further relates to the using method of corrosion inhibitor for semiconductor chip metal substrate of the present invention: after the residue after etching or etching/ashing on the cleaning fluid removal semiconductor wafer, directly semiconductor wafer is cleaned with described corrosion inhibitor for semiconductor chip metal substrate, dry afterwards.
Wherein, described semiconductor wafer preferable for containing the aluminum semiconductor wafer; After with corrosion inhibitor for semiconductor chip metal substrate semiconductor wafer being cleaned, preferable water again cleans.What the time of using corrosion inhibitor for semiconductor chip metal substrate of the present invention that semiconductor wafer is cleaned was preferable is no more than 15 minutes.Corrosion inhibitor for semiconductor chip metal substrate of the present invention can be the cleaning way of semiconductor wafer: overflow infusion method, fast prompt drop liquid method or rotary spray method.
Positive progressive effect of the present invention is: corrosion inhibitor for semiconductor chip metal substrate of the present invention not only has lower corrosion rate to metal (especially aluminium), has environmental protection, low price, easy to use and obvious results characteristics simultaneously.After corrosion inhibitor for semiconductor chip metal substrate of the present invention can clean at the cleaning fluid that employing contains the azanol class, replace solvent isopropyl alcohol and N-Methyl pyrrolidone commonly used to carry out rinsing, also can be after the cleaning fluid that adopts fluoride cleans, carry out rinsing, the action pane during with the direct rinsing of raising deionized water.Corrosion inhibitor for semiconductor chip metal substrate of the present invention has a good application prospect at microelectronics such as metal cleaning and semiconductor wafer cleanings.
Description of drawings
Fig. 1 is the graph of a relation of the dilution ratio of metallic aluminium corrosion rate and fluorine-containing cleaning fluid and water.
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.Among the following embodiment, number percent is mass percent.
Embodiment 1～22
Table 1 has provided the prescription of corrosion inhibitor for semiconductor chip metal substrate embodiment 1～22 of the present invention, presses listed component and content thereof in the table 1, simply mixes, and promptly makes each corrosion inhibitor for semiconductor chip metal substrate.
Table 1 corrosion inhibitor for semiconductor chip metal substrate 1～22 of the present invention
Method embodiment 1
The using method of corrosion inhibitor for semiconductor chip metal substrate, concrete steps:
1. clean wafer 20 minutes behind the plasma etchings down with 65 ℃ of azanol based cleaning liquids (F1) in the table 2.
2. being rotated fountain with 8 pairs of wafers of metal erosion protective liquid in the table 1 cleaned 10 minutes.
3. dry afterwards.
Method embodiment 2
The using method of corrosion inhibitor for semiconductor chip metal substrate, concrete steps:
1. clean wafer 15 minutes behind the plasma etchings down with 65 ℃ of azanol based cleaning liquids (F1) in the table 2.
2. being rotated fountain with 8 pairs of wafers of metal erosion protective liquid in the table 1 cleaned 5 minutes.
3. with deionized water wafer being carried out 2 minutes rotary spray formulas cleans.
4. dry afterwards.
Method embodiment 3
The using method of corrosion inhibitor for semiconductor chip metal substrate, concrete steps:
1. clean wafer 25 minutes behind the plasma etchings down with 65 ℃ of azanol based cleaning liquids (F1) in the table 2.
2. carrying out the overflow immersion type with 8 pairs of wafers of metal erosion protective liquid in the table 1 cleaned 15 minutes.
3. with deionized water wafer being carried out 5 minutes overflow immersion types cleans.
4. dry afterwards.
Method embodiment 4
The using method of corrosion inhibitor for semiconductor chip metal substrate, concrete steps:
1. clean wafer 20 minutes behind the plasma etchings down with 35 ℃ of fluorinated cleaning fluids (F2) in the table 2
2. carrying out fast prompt drop liquid formula with 8 pairs of wafers of metal erosion protective liquid in the watch 1 cleaned 10 minutes.
3. with deionized water wafer being carried out 8 minutes fast prompt drop liquid formulas cleans.
4. dry afterwards.
Effect embodiment
For effect of the present invention is described, prepared the cleaning fluid that contains the azanol class and the cleaning fluid (seeing table 2 for details) of fluorinated according to disclosed patent with typical meaning, and the metallic aluminium corrosion rate (see table 3) of the water of having tested the two and different proportion when diluting.
Table 2 liang class cleaning fluid commonly used and composition thereof
| The cleaning fluid kind | Referenced patent | Concrete cleaning fluid is formed |
| The azanol based cleaning liquid, F1 | US5672577 | 17.5% azanol, 17.5% deionized water, 50% monoethanolamine, 15% catechol |
| The fluorinated cleaning fluid, F2 | US6828289 | 57.5% dimethyl acetamide, 12.8% deionized water, |
| 12% acetic acid, 15.2% ammonium acetate, 2.5% ammonium fluoride (40%, aq.) |
Metallic aluminium corrosion rate method of testing:
1) utilize Napson four-point probe instrument to test the resistance initial value (Rs1) of the blank silicon chip of 4*4cm aluminium;
2) the blank silicon chip of this 4*4cm aluminium is immersed in advance in the solution of constant temperature to 35 ℃ 30 minutes;
3) take out the blank silicon chip of this 4*4cm aluminium, use washed with de-ionized water, high pure nitrogen dries up, and utilizes the resistance value (Rs2) of the blank silicon chip of Napson four-point probe instrument test 4*4cm aluminium again;
4) if necessary, repeated for the second and the 3rd step and test once, resistance value is designated as Rs3;
5) above-mentioned resistance value and soak time are input to suitable procedure and can calculate its corrosion rate.
Metallic aluminium corrosion rate when the water of common cleaning fluid of table 3 liang class and different proportion dilutes (35 ℃)
By table 3 as seen: the metallic aluminium corrosion rate was bigger when the azanol based cleaning liquid diluted in water, and this also is the reason that this based cleaning liquid can not directly be used water rinse.At present, semi-conductor industry circle after adopting the azanol based cleaning liquid to clean, the common solvent rinsing.Used solvent is mainly isopropyl alcohol and N-Methyl pyrrolidone.The former is because flash-point is lower, volatile, once in the breaking out of fire of indivedual semiconductor manufacturing companies, so progressively be eliminated; And the latter is because flash-point uses in good multiple semiconductor manufacturing company than higher, not volatile always, but its price is higher.And along with environmental consciousness and cost pressure, increasing company wishes do not causing under the corrosion prerequisite of metallic aluminium, can be with the direct rinsing of deionized water.
And for fluorine-containing cleaning fluid, when diluting with deionized water, its metallic aluminium corrosion rate exists one to have high to a low curve (as shown in Figure 1) from low to high again with the increase of dilution ratio (dilution/fluorine-containing cleaning fluid).In order to reduce the corrosion of rinsing to the metallic aluminium base material, semi-conductor industry circle a large amount of quick rinsing of water of normal employing in the process of reality at present, so that with fast speeds and short time by the bigger zone of corrosion rate, with the corrosion of minimizing metallic aluminium, and this often brings the too small problem of rinse cycle action pane.If can reduce peak shape height shown in Figure 1, will help reducing the corrosion of metallic aluminium in the rinse cycle, bring bigger action pane simultaneously.
With metal erosion protective liquid embodiment 8 of the present invention is example, illustrates the effect of metal erosion protective liquid of the present invention, and method of testing is the same, the results are shown in Table 4.
Metallic aluminium corrosion rate (35 ℃) when the common cleaning fluid of table 4 liang class dilutes with the metal erosion protective liquid of embodiment 8
By table 4 as seen: metal erosion protective liquid embodiment of the present invention 8 itself is to the corrosion rate of metallic aluminium less (0.53/1.39).When the azanol based cleaning liquid with different proportion dilutes, all has lower corrosion rate (all less than 1.0A/min).And the time with the fluorinated cleaning solution dilution of different proportion, with the water ratio, the peak that corrosion rate is raise is dropped in the table 4 by 89～109.36A/min in the table 3 and (promptly reduces the peak height among Fig. 1) below the 56A/min, and this can provide bigger action pane for adopting the rinse step after the fluorinated cleaning fluid cleans.
To sum up, positive progressive effect of the present invention is:
1) provide a kind of environmental protection, low price, operation is simple and easy and the rinsing metal erosion protective liquid of the significant semiconductor crystal wafer of effect after cleaning, itself is to less (as: the Corrosion of Al speed＜1.5A/min) of corrosion of metal speed.
2) in containing the cleaning fluid wet clean process of azanol class, can replace the solvent rinsing and can not cause the corrosion (as: corrosion rate of metallic aluminium＜1.0A/min) of metal base.
3) in containing the cleaning fluid wet clean process of fluorine class, metal erosion maximum rate in the time of can reducing its rinsing (reducing the peak height among Fig. 1) can provide larger action pane for rinsing.
Claims (18)
1. a corrosion inhibitor for semiconductor chip metal substrate is characterized in that containing: carbonyl bearing polymer, the polymkeric substance that contains the pigment affinity groups and water.
2. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 1 is characterized in that: described metal base is an aluminium.
3. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 2 is characterized in that: described aluminium is standard aluminum, Al-Si-Cu alloy or the aluminium copper that is applied to semiconductor technology.
4. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 1 is characterized in that: described carbonyl bearing polymer is selected from one or more in carboxylic homopolymer, carboxylic homopolymer salt, carboxylic multipolymer and the carboxylic copolymer salt.
5. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 4 is characterized in that: described carboxylic homopolymer is one or more in HPMA, polyacrylic acid and the polymethylacrylic acid; Described carboxylic multipolymer is the multipolymer that contains the multipolymer and/or the vinyl-containing monomers of carboxylic monomer and contain carboxylic monomer; Described salt is one or more in ammonium salt, sylvite and the sodium salt.
6. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 5 is characterized in that: the described multipolymer that contains carboxylic monomer is the multipolymer of acrylic acid and maleic acid and/or the multipolymer of methacrylic acid and maleic acid; Described vinyl-containing monomers and the multipolymer that contains carboxylic monomer are selected from one or more in the multipolymer of the multipolymer of multipolymer, ethene and methacrylic acid of multipolymer, ethene and acrylic acid multipolymer, vinyl cyanide and acrylic acid multipolymer, styrene and methacrylic acid of multipolymer, vinyl cyanide and the maleic acid of styrene and acrylic acid multipolymer, styrene and maleic acid and vinyl cyanide and methacrylic acid; Described ammonium salt is an ammonium polyacrylate.
7. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 1 is characterized in that: the content of described carbonyl bearing polymer is mass percent 0.0001～3%.
8. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 1 is characterized in that: the described polymkeric substance that contains the pigment affinity groups is the polyacrylate polymers that contains the pigment affinity groups.
9. as claim 1 or 8 described corrosion inhibitor for semiconductor chip metal substrate, it is characterized in that: described pigment affinity groups is hydroxyl or amino.
10. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 8, it is characterized in that: the described polyacrylate polymers that contains the pigment affinity groups is selected from the multipolymer of hydroxy-ethyl acrylate and acrylamide, the multipolymer of acrylic ester monomer and hydroxy-ethyl acrylate class monomer, the multipolymer of acrylic ester monomer and hydroxyethyl methylacrylate class monomer, the multipolymer of acrylic ester monomer and acrylamide monomers, acrylic ester monomer, the terpolymer of hydroxy-ethyl acrylate class monomer and vinyl-containing monomers, acrylic ester monomer, the terpolymer of hydroxyethyl methylacrylate class monomer and vinyl-containing monomers, and acrylic ester monomer, in the terpolymer of acrylamide monomers and vinyl-containing monomers one or more.
11. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 10 is characterized in that: the terpolymer of described acrylic ester monomer, hydroxy-ethyl acrylate class monomer and vinyl-containing monomers is methyl acrylate, hydroxy-ethyl acrylate and cinnamic terpolymer; The terpolymer of described acrylic ester monomer, acrylamide monomers and vinyl-containing monomers is butyl acrylate, acrylamide and acrylic acid terpolymer.
12. as claim 10 or 11 described corrosion inhibitor for semiconductor chip metal substrate, it is characterized in that: described acrylic ester monomer is methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, Jia Jibingxisuanyizhi, propyl methacrylate or butyl methacrylate.
13. corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 1 is characterized in that: the described content that contains the polymkeric substance of pigment affinity groups is mass percent 0.0001～3%.
14. the using method of corrosion inhibitor for semiconductor chip metal substrate as claimed in claim 1, it is characterized in that: after the residue after etching or etching/ashing on the cleaning fluid removal semiconductor wafer, directly semiconductor wafer is cleaned with described corrosion inhibitor for semiconductor chip metal substrate, dry afterwards.
15. using method as claimed in claim 14 is characterized in that: described semiconductor wafer is for containing the aluminum semiconductor wafer.
16. method as claimed in claim 14 is characterized in that: after cleaning with corrosion inhibitor for semiconductor chip metal substrate, water cleans again.
17. method as claimed in claim 14 is characterized in that: the described time of semiconductor wafer being cleaned with corrosion inhibitor for semiconductor chip metal substrate is no more than 15 minutes.
18. method as claimed in claim 14 is characterized in that: described mode of semiconductor wafer being cleaned with corrosion inhibitor for semiconductor chip metal substrate is overflow immersion type, fast prompt drop liquid formula or rotary spray formula.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100477909A CN101424887A (en) | 2007-11-02 | 2007-11-02 | Semiconductor wafer metal substrate web corrosion prevention liquid and its use method |
| PCT/CN2008/001829 WO2009062397A1 (en) | 2007-11-02 | 2008-10-31 | Corrosion inhibitor for semiconductor chip metal substrate and use method thereof |
| CN2008801148297A CN101842747B (en) | 2007-11-02 | 2008-10-31 | Corrosion inhibitor for semiconductor chip metal substrate and use method thereof |
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| CNA2007100477909A CN101424887A (en) | 2007-11-02 | 2007-11-02 | Semiconductor wafer metal substrate web corrosion prevention liquid and its use method |
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| WO (1) | WO2009062397A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102296294A (en) * | 2010-06-25 | 2011-12-28 | 安集微电子（上海）有限公司 | Metal corrosion protection solution and application thereof |
| WO2012083587A1 (en) * | 2010-12-21 | 2012-06-28 | 安集微电子（上海）有限公司 | Cleaning liquid for thick film photoresists |
| CN102540774A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Cleaning agent for thick-film photoresist |
| CN102566331A (en) * | 2010-12-21 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning fluid for thick-film photoresist |
| CN103377877A (en) * | 2012-04-27 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102981376A (en) * | 2011-09-05 | 2013-03-20 | 安集微电子（上海）有限公司 | Photoresist cleaning solution |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5338347A (en) * | 1992-09-11 | 1994-08-16 | The Lubrizol Corporation | Corrosion inhibition composition |
| US5516459A (en) * | 1994-08-12 | 1996-05-14 | Buckeye International, Inc. | Aircraft cleaning/degreasing compositions |
| MXPA01011087A (en) * | 1999-05-03 | 2002-06-04 | Betzdearborn Inc | Method and composition for inhibiting corrosion in aqueous systems. |
| JP2005002370A (en) * | 2003-06-09 | 2005-01-06 | Nippon Paint Co Ltd | Surface treatment method for aluminum-based substrate, and surface-treated substrate |
| CN1900363B (en) * | 2005-07-21 | 2016-01-13 | 安集微电子（上海）有限公司 | Scavenging solution and uses thereof |
| CN1982426B (en) * | 2005-12-16 | 2011-08-03 | 安集微电子（上海）有限公司 | Slow-releasing agent system for cleaning semiconductor chip |
-
2007
- 2007-11-02 CN CNA2007100477909A patent/CN101424887A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102296294A (en) * | 2010-06-25 | 2011-12-28 | 安集微电子（上海）有限公司 | Metal corrosion protection solution and application thereof |
| CN102296294B (en) * | 2010-06-25 | 2016-01-20 | 安集微电子（上海）有限公司 | A kind of metal corrosion protection solution and application thereof |
| WO2012083587A1 (en) * | 2010-12-21 | 2012-06-28 | 安集微电子（上海）有限公司 | Cleaning liquid for thick film photoresists |
| CN102540774A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Cleaning agent for thick-film photoresist |
| CN102566331A (en) * | 2010-12-21 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning fluid for thick-film photoresist |
| CN102566331B (en) * | 2010-12-21 | 2016-08-03 | 安集微电子（上海）有限公司 | A kind of thick film photolithography glue cleanout fluid |
| CN103377877A (en) * | 2012-04-27 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning semiconductor device |
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