CN101417520A - Multilayer medium double silver layer low-radiation film and production technique thereof - Google Patents

Multilayer medium double silver layer low-radiation film and production technique thereof Download PDF

Info

Publication number
CN101417520A
CN101417520A CNA2008101433457A CN200810143345A CN101417520A CN 101417520 A CN101417520 A CN 101417520A CN A2008101433457 A CNA2008101433457 A CN A2008101433457A CN 200810143345 A CN200810143345 A CN 200810143345A CN 101417520 A CN101417520 A CN 101417520A
Authority
CN
China
Prior art keywords
rete
layer
snoy
thickness
tiox
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2008101433457A
Other languages
Chinese (zh)
Other versions
CN101417520B (en
Inventor
陈理
李国强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hunan Yufeng Vacuum Science and Technology Co Ltd
Original Assignee
Hunan Yufeng Vacuum Science and Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hunan Yufeng Vacuum Science and Technology Co Ltd filed Critical Hunan Yufeng Vacuum Science and Technology Co Ltd
Priority to CN2008101433457A priority Critical patent/CN101417520B/en
Publication of CN101417520A publication Critical patent/CN101417520A/en
Application granted granted Critical
Publication of CN101417520B publication Critical patent/CN101417520B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

A double silver-layer low-radiation film of a multi-layer medium and the producing technology pertain to the double silver-layer low-radiation film and the producing technology. The invention mainly aims at solving the technical problems that the product of the existing double silver-layer low-e film can not give consideration to two indicators of transmittance and sunshade coefficient simultaneously, and the like. The points of the technical proposal are as follows: the double silver-layer low-radiation film-coating product is made by the method of magnetron sputtering film-coating in vacuum. The product includes a substrate, a multi-layer medium film layer 1, an Ag layer, a barrier layer, a multi-layer medium film layer 2, the Ag layer, the barrier layer, the multi-layer medium film layer 3, and Si3N4. The composing mode of the multi-layer medium film layers 1, 2 or 3 includes TiOx/SnOy/ZnO: Al, SnOy/Si3N4/SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx, or NbOy/Si3N4/NbOy. The technology has higher transmittance and lower sunshade coefficient simultaneously, thus being convenient to the adjustment the appearance color and the indoor color. The product can be widely applied in the fields of buildings and windscreens of vehicles and ships, and can also be used as a sticking film by being coated on the soft substrate.

Description

A kind of multilayer medium double silver layer low-radiation film and production technology thereof
Technical field
The present invention relates to a kind of pair of silver low radiation film.
Background technology
At present, the low-emission coated product on the market can be divided into two big classes substantially: a class is a high visible light transmissivity, the high-sunshade coefficient; Another kind of is the low visible light transmitance, lower shading coefficient.Market also lacks a kind of product, has high visible light transmissivity, satisfies low shading coefficient simultaneously, promptly reaches higher selection coefficient.
The membrane structure of traditional low-emission coated product is generally:
Glass/bottom dielectric film/barrier layer/Ag layer/barrier layer/top layer dielectric layer;
Or: glass/bottom dielectric film/Ag layer/barrier layer/intermediate layer deielectric-coating/Ag layer/barrier layer/top layer dielectric layer.
In above-mentioned two kinds of structures, a common characteristic is arranged, deielectric-coating all adopts individual layer.Product can not be taken into account transmitance and two indexs of shading coefficient simultaneously, selects coefficient can only reach 1.4.
Summary of the invention
The purpose of this invention is to provide a kind of higher transmittance that has, have the multilayer medium double silver layer low-radiation film of low shading coefficient simultaneously.
The technical solution adopted for the present invention to solve the technical problems is: the rete that adopts following membrane structure to make: substrate/multilayer dielectricity rete 1/Ag layer/barrier layer/multilayer dielectricity rete 2/Ag layer/barrier layer/multilayer dielectricity rete 3/Si 3N 4Described multilayer dielectricity rete 1,2 or 3 compositional model comprise: TiOx/SnOy/ZnO:Al, SnOy/Si 3N 4/ SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx or NbOy/Si 3N 4/ NbOy.Described multilayer dielectricity rete 1,2 adopts identical membrane structure with 3, promptly all adopts any one identical membrane structure.Described multilayer dielectricity rete 1,2 adopts different membrane structures with 3, and promptly described multilayer dielectricity rete 1,2 and 3 adopts respectively and comprises TiOx/SnOy/ZnO:Al, SnOy/Si 3N 4/ SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx or NbOy/Si 3N 4Any 2 kinds or 3 kinds of membrane structures among/the NbOy.Described barrier layer 1 or 2 rete material comprise: NiCr, Nb, Ti, NiCrOx or NbOx.Described barrier layer 1 or 2 rete material adopt identical membrane structure, promptly all adopt any one identical membrane structure.Described barrier layer 1 or 2 rete material adopt different membrane structures, and promptly described barrier layer 1 or 2 rete material adopt any 2 kinds of membrane structures that comprise among NiCr, Nb, Ti, NiCrOx or the NbOx respectively.The material of described substrate comprises glass or plastics.
Another object of the present invention provides a kind of production technology that is used for described multilayer medium double silver layer low-radiation film, it is characterized in that using the vacuum magnetic-control sputtering film plating process to produce two silver low radiation plated film products, and concrete processing step is as follows:
(1) substrate cleans;
(2) enter the vacuum sputtering district;
(3) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(4) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(5) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(6) single target bucket rotating cathode, magnetically controlled DC sputtering deposition Ag layer, thickness 11-13nm;
(7) single target bucket rotating cathode, magnetically controlled DC sputtering deposition NiCrOx layer, thickness 3-8nm;
(8) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(9) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(10) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(11) single target bucket rotating cathode, magnetically controlled DC sputtering deposition Ag layer, thickness 11-13nm;
(12) single target bucket rotating cathode, magnetically controlled DC sputtering deposition NiCrOx layer, thickness 3-8nm;
(13) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(14) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(15) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(16) dual rotary negative electrode, SiAl ceramic target, intermediate frequency reaction magnetocontrol sputtering deposition Si 3N 4Rete, thickness 20-25nm.
Thereby make the product membrane structure of making be: substrate/complex media rete/Ag layer/barrier layer/multilayer dielectricity rete/Ag layer/barrier layer/multilayer dielectricity rete/Si 3N 4
The invention has the beneficial effects as follows: it produces two silver low radiation plated film products by utilization vacuum magnetic-control sputtering film plating process.Promptly adopt dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit multilayer media coating, with single rotating cathode, magnetically controlled DC sputtering deposition Ag layer and barrier layer.But this membrane structure plated film is on glass, but also plated film on soft substrate.This product has higher transmittance, has lower shading coefficient simultaneously, and is convenient to the adjustment of appearance color and indoor color, and its transmitance reaches 81%; Shading coefficient reaches 0.4.It can be widely used in fields such as building field and car and boat window windshield; Also can be coated on the soft substrate, as the usefulness of pad pasting.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of embodiment 1.
The specific embodiment
That the invention will be further described is as follows below in conjunction with embodiment:
The present invention satisfies the demand of market to the two silver low radiation products of height selection coefficient, the invention provides a kind of two silver low radiation products of multilayer dielectric film.The membrane structure of this product is: glass or soft substrate/multilayer dielectricity rete 1/Ag layer 1/ barrier layer 1/ multilayer dielectricity rete 2/Ag layer, 2/ barrier layer, 2/ multilayer dielectricity rete 3/Si 3N 4Described multilayer dielectricity rete 1,2 or 3 composition can be: TiOx/SnOy/ZnO:Al, SnOy/Si 3N 4/ SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx or NbOy/Si 3N 4/ NbOy etc.
The rete on described barrier layer can adopt: NiCr, Nb, Ti, NiCrOx or NbOx etc.
Embodiment 1, multilayer dielectricity rete of the present invention adopts: TiOx/SnOy/ZnO:Al, the rete on barrier layer adopts: NiCrOx constitutes membrane structure of the present invention and is: glass/TiOx/SnOy/ZnO:Al/Ag/NiCrOx/TiOx/SnOy/ZnO:Al/Ag/NiCrOx/Ti Ox/SnOy/ZnO:Al/Si 3N 4Should be with the production technology of example:
(1) substrate cleans;
(2) enter the vacuum sputtering district;
(3) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(4) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(5) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(6) single target bucket rotating cathode, magnetically controlled DC sputtering deposition Ag layer, thickness 11-13nm;
(7) single target bucket rotating cathode, magnetically controlled DC sputtering deposition NiCrOx layer, thickness 3-8nm;
(8) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(9) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(10) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(11) single target bucket rotating cathode, magnetically controlled DC sputtering deposition Ag layer, thickness 11-13nm;
(12) single target bucket rotating cathode, magnetically controlled DC sputtering deposition NiCrOx layer, thickness 3-8nm;
(13) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(14) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(15) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(16) dual rotary negative electrode, SiAl ceramic target, intermediate frequency reaction magnetocontrol sputtering deposition Si 3N 4Rete, thickness 20-25nm;
By above-mentioned membrane structure and production technology, the basic parameter of the two silver low radiation products that go out at the plated film on glass of 6mm thickness is: transmitance 81%; Shading coefficient 0.4.Consult Fig. 1 and Fig. 2.
Embodiment 2, and multilayer dielectricity rete 1,2 of the present invention or 3 composition also can be: SnOy/Si 3N 4/ SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx or NbOy/Si 3N 4/ NbOy etc., described multilayer dielectricity rete 1,2 and 3 both can be identical above-mentioned any one membrane structure, also can be different above-mentioned any 2 kinds or 3 kinds of membrane structures.Described barrier layer 1 or 2 rete can adopt: NiCr, Nb, Ti, NiCrOx or NbOx etc.Described barrier layer 1 or 2 rete both can be identical above-mentioned any one membrane structures, also can be different above-mentioned any 2 kinds of membrane structures.The material that described substrate adopts can comprise that glass, plastics and other soft substrate etc. can be for the materials of film forming.Consult Fig. 1 and Fig. 2, all the other are with embodiment 1.

Claims (9)

1, a kind of multilayer medium double silver layer low-radiation film is characterized in that its membrane structure is: substrate/multilayer dielectricity rete 1/Ag layer/barrier layer/multilayer dielectricity rete 2/Ag layer/barrier layer/multilayer dielectricity rete 3/Si 3N 4
2, multilayer medium double silver layer low-radiation film according to claim 1 is characterized in that: described multilayer dielectricity rete 1,2 or 3 compositional model comprise: TiOx/SnOy/ZnO:Al, SnOy/Si 3N 4/ SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx or NbOy/Si 3N 4/ NbOy.
3, multilayer medium double silver layer low-radiation film according to claim 2 is characterized in that: described multilayer dielectricity rete 1,2 adopts identical membrane structure with 3, promptly all adopts any one identical membrane structure.
4, multilayer medium double silver layer low-radiation film according to claim 2 is characterized in that: described multilayer dielectricity rete 1,2 adopts different membrane structures with 3, and promptly described multilayer dielectricity rete 1,2 and 3 adopts respectively and comprises TiOx/SnOy/ZnO:Al, SnOy/Si 3N 4/ SnOy, ZnOx/SnOy/ZnOx, TiOx/SnOy/TiOx or NbOy/Si 3N 4Any 2 kinds or 3 kinds of membrane structures among/the NbOy.
5, multilayer medium double silver layer low-radiation film according to claim 1 is characterized in that: described barrier layer 1 or 2 rete material comprise: NiCr, Nb, Ti, NiCrOx or NbOx.
6, multilayer medium double silver layer low-radiation film according to claim 5 is characterized in that: described barrier layer 1 or 2 rete material adopt identical membrane structure, promptly all adopt any one identical membrane structure.
7, multilayer medium double silver layer low-radiation film according to claim 5, it is characterized in that: described barrier layer 1 or 2 rete material adopt different membrane structures, and promptly described barrier layer 1 or 2 rete material adopt any 2 kinds of membrane structures that comprise among NiCr, Nb, Ti, NiCrOx or the NbOx respectively.
8, multilayer medium double silver layer low-radiation film according to claim 1 is characterized in that: the material of described substrate comprises glass or plastics.
9, a kind of production technology that is used for the described multilayer medium double silver layer low-radiation film of claim 1 is characterized in that using the vacuum magnetic-control sputtering film plating process to produce two silver low radiation plated film products, and concrete processing step is as follows:
(1) substrate cleans;
(2) enter the vacuum sputtering district;
(3) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(4) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(5) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(6) single target bucket rotating cathode, magnetically controlled DC sputtering deposition Ag layer, thickness 11-13nm;
(7) single target bucket rotating cathode, magnetically controlled DC sputtering deposition NiCrOx layer, thickness 3-8nm;
(8) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(9) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(10) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(11) single target bucket rotating cathode, magnetically controlled DC sputtering deposition Ag layer, thickness 11-13nm;
(12) single target bucket rotating cathode, magnetically controlled DC sputtering deposition NiCrOx layer, thickness 3-8nm;
(13) dual rotary negative electrode, TiOx ceramic target, intermediate frequency reaction magnetocontrol sputtering depositing Ti Ox rete, thickness 10-15nm;
(14) dual rotary negative electrode, Sn metal targets, intermediate frequency reaction magnetocontrol sputtering deposition SnOy rete, thickness 10-15nm;
(15) dual rotary negative electrode, ZnO:Al ceramic target (Al content 2wt%), intermediate frequency reaction magnetocontrol sputtering deposition ZnO:Al rete, thickness 10-15nm;
(16) dual rotary negative electrode, SiAl ceramic target, intermediate frequency reaction magnetocontrol sputtering deposition Si 3N 4Rete, thickness 20-25nm.
CN2008101433457A 2008-10-17 2008-10-17 Multilayer medium double silver layer low-radiation film and production technique thereof Active CN101417520B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008101433457A CN101417520B (en) 2008-10-17 2008-10-17 Multilayer medium double silver layer low-radiation film and production technique thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008101433457A CN101417520B (en) 2008-10-17 2008-10-17 Multilayer medium double silver layer low-radiation film and production technique thereof

Publications (2)

Publication Number Publication Date
CN101417520A true CN101417520A (en) 2009-04-29
CN101417520B CN101417520B (en) 2012-08-22

Family

ID=40628608

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101433457A Active CN101417520B (en) 2008-10-17 2008-10-17 Multilayer medium double silver layer low-radiation film and production technique thereof

Country Status (1)

Country Link
CN (1) CN101417520B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102501451A (en) * 2011-11-25 2012-06-20 林嘉宏 Temperable di-silver low-emissivity coated glass and manufacturing process thereof
CN102501447A (en) * 2011-11-07 2012-06-20 中山市格兰特实业有限公司火炬分公司 Double-silver LOW-E glass
CN102950842A (en) * 2012-11-26 2013-03-06 中山市创科科研技术服务有限公司 Ultrahigh-transmittance single-silver low-radiation glass capable of being tempered
CN103879089A (en) * 2012-12-21 2014-06-25 中国南玻集团股份有限公司 High-performance three-silver-layer low-radiation glass and preparation method thereof
CN103879088A (en) * 2012-12-21 2014-06-25 中国南玻集团股份有限公司 High-performance double-silver-layer low-radiation glass and preparation method thereof
CN104355551A (en) * 2014-10-30 2015-02-18 中山市亨立达机械有限公司 Novel double-silver LOW-E coated glass
CN105236765A (en) * 2015-09-28 2016-01-13 赛柏利安工业技术(苏州)有限公司 Double silver energy-saving glass deposition method of sunlight selection light filtration film system
CN105439467A (en) * 2015-11-26 2016-03-30 黑龙江健中特种玻璃有限公司 High-transmittance, double-silver and low-emissivity coated glass facilitating subsequent processing and production process of high-transmittance, double-silver and low-emissivity coated glass

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1274620C (en) * 2004-05-08 2006-09-13 上海耀皮工程玻璃有限公司 Double silver low-emissivity coated glass based on composite dielectric layer

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102501447A (en) * 2011-11-07 2012-06-20 中山市格兰特实业有限公司火炬分公司 Double-silver LOW-E glass
CN102501447B (en) * 2011-11-07 2014-06-11 中山市格兰特实业有限公司火炬分公司 Double-silver LOW-E glass
CN102501451A (en) * 2011-11-25 2012-06-20 林嘉宏 Temperable di-silver low-emissivity coated glass and manufacturing process thereof
CN102950842A (en) * 2012-11-26 2013-03-06 中山市创科科研技术服务有限公司 Ultrahigh-transmittance single-silver low-radiation glass capable of being tempered
CN102950842B (en) * 2012-11-26 2016-01-27 中山市创科科研技术服务有限公司 One can the saturating single silver-layer low-radiation glass of tempering superelevation
CN103879089A (en) * 2012-12-21 2014-06-25 中国南玻集团股份有限公司 High-performance three-silver-layer low-radiation glass and preparation method thereof
CN103879088A (en) * 2012-12-21 2014-06-25 中国南玻集团股份有限公司 High-performance double-silver-layer low-radiation glass and preparation method thereof
CN104355551A (en) * 2014-10-30 2015-02-18 中山市亨立达机械有限公司 Novel double-silver LOW-E coated glass
CN105236765A (en) * 2015-09-28 2016-01-13 赛柏利安工业技术(苏州)有限公司 Double silver energy-saving glass deposition method of sunlight selection light filtration film system
CN105236765B (en) * 2015-09-28 2018-06-29 赛柏利安工业技术(苏州)有限公司 A kind of double silver-colored energy-saving glass deposition methods of sunlight selection optical filtering membrane system
CN105439467A (en) * 2015-11-26 2016-03-30 黑龙江健中特种玻璃有限公司 High-transmittance, double-silver and low-emissivity coated glass facilitating subsequent processing and production process of high-transmittance, double-silver and low-emissivity coated glass

Also Published As

Publication number Publication date
CN101417520B (en) 2012-08-22

Similar Documents

Publication Publication Date Title
CN101417520B (en) Multilayer medium double silver layer low-radiation film and production technique thereof
CN102757185B (en) Low-radiation heat-treatable coated glass and interlayer glass product thereof
CN108975726B (en) ultra-LOW reflection toughened LOW-E glass
CA2593028A1 (en) Method of making low-e coating using ceramic zinc inclusive target, and target used in same
CN201762248U (en) Low-radiation coating glass
CN106904842B (en) Champagne gold double-silver low-emissivity coated glass and preparation method thereof
CN109305763A (en) A kind of high-transparency list silver low-radiation coated glass
TW201305078A (en) Triple-silver low radiation coating glass and manufacturing method thereof
CN102582167B (en) Low-emission glass and manufacturing method for low-emission glass
CN206553403U (en) A kind of high infrared reflection coated glass
CN107382093A (en) A kind of Chinese red double-silver low-emissivity coated glass and preparation method
CN103895276A (en) Silver-based low-radiation coated glass
CN201300572Y (en) Multi-layered dielectric double-silver layer low-emissivity film
CN108585541A (en) A kind of not membrane removal can steel list silver-layer low-radiation glass and preparation method thereof
CN101935169A (en) Film glass structure adopting TiO2 ceramic target magnetron sputtering and method thereof
CN106116176B (en) A kind of coral magnetron sputtering low radiation coated glass production technology
CN101691281A (en) Low radiation glass taking silica-based material as dielectric layer
CN205258316U (en) Low radiation coated glass of two silver of ocean blue
CN104264119B (en) Asymmetric-film-series double-silver LOW-E glass and preparation method thereof
CN101708961A (en) Off-line coated low-irradiation glass
CN105015109A (en) Coated glass with top-layer transparent electric-conduction protection film structure
CN201999858U (en) Low-reflectivity coated glass coated with double silver layers and with TiO2 (titanium dioxide) serving as base layer
CN204149614U (en) Single silver-colored radiation coated glass capable of being toughened
CN208164433U (en) It is a kind of can following process green low radiation coated glass
CN202344935U (en) Three-silver low emissivity coated glass capable of being tempered

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant